KR20000003743A - 볼 그리드 어레이 패키지 및 그의 제조 방법 - Google Patents

볼 그리드 어레이 패키지 및 그의 제조 방법 Download PDF

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Publication number
KR20000003743A
KR20000003743A KR1019980025015A KR19980025015A KR20000003743A KR 20000003743 A KR20000003743 A KR 20000003743A KR 1019980025015 A KR1019980025015 A KR 1019980025015A KR 19980025015 A KR19980025015 A KR 19980025015A KR 20000003743 A KR20000003743 A KR 20000003743A
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South Korea
Prior art keywords
metal wire
groove
semiconductor chip
encapsulant
metal
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KR1019980025015A
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English (en)
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KR100265563B1 (ko
Inventor
박상욱
김지연
Original Assignee
김영환
현대전자산업 주식회사
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Application filed by 김영환, 현대전자산업 주식회사 filed Critical 김영환
Priority to KR1019980025015A priority Critical patent/KR100265563B1/ko
Priority to TW088110395A priority patent/TW419761B/zh
Priority to US09/339,094 priority patent/US6211461B1/en
Priority to CNB991088646A priority patent/CN1211854C/zh
Priority to GB9915229A priority patent/GB2339334B/en
Priority to JP18393299A priority patent/JP4400898B2/ja
Publication of KR20000003743A publication Critical patent/KR20000003743A/ko
Application granted granted Critical
Publication of KR100265563B1 publication Critical patent/KR100265563B1/ko
Priority to US09/782,699 priority patent/US6519846B2/en

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Abstract

본 발명은 볼 그리드 어레이 패키지 및 그의 제조 방법을 개시한다. 개시된 본 발명은, 회로가 구성된 반도체 칩(10)에 U자 형상의 홈부(11)가 형성되고, 홈부(11)의 저면 중앙과 양측에 한 쌍의 본딩 패드(20)와 절연 패드(30)가 형성된다. 각 패드(20,30)는 금속 와이어(40)에 의해 연결되고, 봉지제(50)가 홈부(11)내를 몰딩하게 된다. 이때, 금속 와이어(40)의 중간부가 봉지제(50)에서 돌출되고, 이 돌출된 금속 와이어(40) 부분에 범프(60)가 부착되며, 기판에 실장되는 솔더 볼(70)이 범프(60)에 부착된다. 따라서, 봉지제(50)가 반도체 칩(10)에서 돌출되지 않으므로, 반도체 칩(10)의 두께가 바로 패키지의 두께가 되어, 패키지의 경박화가 실현된다.

Description

볼 그리드 어레이 패키지 및 그의 제조 방법
본 발명은 볼 그리드 어레이 패키지 및 그의 제조 방법에 관한 것으로서, 보다 구체적으로는 소정의 회로 패턴을 갖는 기판에 반도체 칩이 탑재되어 전기적으로 연결되고, 기판의 하면에 실장을 위한 다수의 솔더 볼이 부착되어 구성된 볼 그리드 어레이 패키지 및 그의 제조 방법에 관한 것이다.
패키지의 한 예로서, 가장 범용으로 사용되고 있는 에스오제이(SOJ:Small Outline J-lead) 타입이 있고, 특수한 경우에 사용하는 지프(ZIP: Zigzag Inline Package) 타입이 있으며, 또 규격화되고 있는 메모리 카드(memory card)에 적합하도록 구성된 티에스오피(TSOP: Thin Small Outline Package) 타입 등이 있다.
이러한 패키지 제조 방법을 개략적으로 설명하면 다음과 같다.
먼저, 웨이퍼를 스크라이빙 라인을 따라 절단하는 소잉(sawing) 공정을 진행하여 개개의 반도체 칩으로 분리한 다음, 리드 프레임의 인너 리드를 각 반도체 칩에 부착하는 다이 어태치 공정을 진행한다.
이후 일정 온도에서 일정시간 동안 큐어링(curing)을 실시한 후, 반도체 칩의 패드와 리드 프레임의 인너 리드를 금속 와이어로 상호 연결시켜 전기적으로 연결시키는 와이어 본딩 공정을 수행한다.
와이어 본딩이 끝나면, 봉지제를 사용하여 반도체 칩을 몰딩하는 몰딩 공정을 수행한다. 이와 같이 반도체 칩을 몰딩해야만, 외부의 열적, 기계적 충격으로 부터 반도체 칩을 보호할 수가 있는 것이다.
상기와 같은 몰딩 공정이 완료된 후에는 아우터 리드을 도금하는 플래팅 공정, 아우터 리드를 지지하고 있는 댐바를 절단하는 트림 공정, 및 기판에 실장이 용이하도록 아우터 리드를 소정 형태로 절곡 형성하는 포밍 공정을 진행하여, 패키지를 제조한다.
이러한 공정으로 제작되는 일반적인 패키지에 대해, 패키지의 경박화를 위해 제시된 볼 그리드 어레이 패키지는 상기 일반적인 패키지에서 사용되는 리드 프레임 대신에 탭 테이프가 사용되고, 기판에 실장하기 위해서 수 개의 솔더 볼이 어레이식으로 배열된다.
종래의 볼 그리드 어레이 패키지는 도 1에 나타낸 바와 같이, 반도체 칩(1)의 패드에 범프(2)가 형성되어 있고, 구리 재질의 금속 패턴이 형성된 탭 테이프(3:TAB tape)가 범프(2)에 열압착에 의해 부착되어 전기적으로 연결된다. 전체가 봉지제(4)로 몰딩되고, 탭 테이프(3)의 밑면에 형성된 볼 랜드에 솔더 볼(5)이 부착된 구조로 이루어져 있다.
그러나, 상기한 바와 같은 종래의 패키지의 두께는 반도체 칩(1)에 탭 테이프(3)와 봉지제(4)의 두께가 합산되기 때문에, 경박화되는 패키지 발전 추세에 비추어보면 개선의 요지가 되어 왔다.
그리고, 범프(2)와 탭 테이프(3)를 열압착할 때, 기계적 충격으로 범프(2) 또는 탭 테이프(3)에 균열이 발생되는 문제점이 있었다.
또한, 볼 랜드의 금속면과 솔더 볼(5)이 반응하여, 계면에서 금속 화합물이 발생되는 문제점도 있었다.
특히, 탭 테이프(3) 자체에는 이온 또는 수분이 잔존할 소지가 많아서, 패키지가 오동작을 일으키는 경우가 많았다. 또한, 탭 테이프(3)내의 금속 패턴을 절연시키는 절연 필름이 손상되면, 쇼트가 발생된다. 그리고, 패드의 위치나 솔더 볼간의 피치나 위치가 변경될 때마다, 탭 테이프(3)를 새로 설계해야만 하는 문제점도 있었다.
상기와 같은 문제점을 해소하기 위해 안출된 본 발명은, 반도체 칩의 두께가 패키지의 두께가 되도록 하여, 패키지의 경박화를 실현할 수 있는 획기적인 구조의 볼 그리드 어레이 패키지 및 그의 제조 방법을 제공하는데 목적이 있다.
다른 목적은, 범프를 사용하지 않고 금속 와이어로 대체하여, 기계적 충격에 의한 패드의 파괴를 방지할 수 있는 볼 그리드 어레이 패키지 및 그의 제조 방법을 제공하는데 목적이 있다.
또 다른 목적은, 솔더 볼의 부착 방식을 변경하여 솔더 볼과 볼 랜드 사이에 금속 반응이 일어나지 않도록 하는데 있다.
또한, 탭 테이프를 사용하지 않으므로써, 탭 테이프로 인한 제반 문제점들을 해소시키는데 목적이 있다.
도 1은 종래의 볼 그리드 어레이 패키지를 나타낸 단면도
도 2 내지 도 10은 본 발명의 실시예 1에 따른 패키지의 제조 과정을 순차적으로 나타낸 단면도
도 11 및 도 12는 본 발명의 실시예 2에 따른 패키지 제조 과정을 나타낸 단면도
도 13 및 도 14는 본 발명의 실시예 3에 따른 패키지 제조 과정을 나타낸 단면도
도 15 내지 도 19는 본 발명의 실시예4에 따른 패키지 제조 과정을 순차적으로 나타낸 단면도
- 도면의 주요 부분에 대한 부호의 설명 -
10 - 반도체 칩 11 - 홈부
20 - 본딩 패드 30 - 절연 패드
40 - 금속 와이어 50 - 봉지제
60 - 범프 70 - 솔더 볼
100 - 세라믹 캡 101 - 인출홈
상기와 같은 목적을 달성하기 위한 본 발명에 따른 패키지는 다음과 같은 구성으로 이루어진다.
회로가 형성될 반도체 칩의 상부 밑면에 홈부가 형성되고, 홈부의 저면 중앙에 본딩 패드가 형성된다. 본딩 패드의 양측으로 절연 패드가 부착되고, 절연 패드와 패드가 금속 와이어로 연결된다. 특히, 금속 와이어의 중간부는 반도체 칩의 양측 상단에서 약간 돌출되게 굴곡진 형상을 이룬다. 홈부 전체가 봉지제에 의해 몰딩되는데, 이때 금속 와이어의 돌출부가 봉지제에서 약간 돌출된다. 금속 와이어의 돌출부에 범프가 형성되고, 이 범프에 솔더 볼이 부착된다.
다른 방안으로서, 절연 패드 대신에, 더미(dummy) 패드가 반도체 칩의 양측 상단에 형성되고, 본딩 패드와 더미 패드가 금속 와이어로 연결된다. 홈부 전체가 봉지제에 의해 몰딩되고, 반도체 칩의 양측 상단면을 기준으로 그라인딩되어, 더미 패드와 금속 와이어의 상단이 제거된다. 따라서, 금속 와이어의 절단된 상단은 봉지제에서 노출되고, 이 노출된 금속 와이어에 범프가 형성되어서, 솔더 볼이 부착된다.
또 다른 방안으로서, 여러 개가 연결된 반도체 칩 각각에 홈부가 형성되고, 홈부 저면 중앙에 한 쌍의 본딩 패드가 형성된다. 금속 와이어가 인접하는 반도체 칩들 사이를 넘어서, 그의 양단이 각 홈부에 형성된 본딩 패드에 연결된다. 각 홈부가 봉지제로 몰딩되고, 각 반도체 칩이 절단되어 개개의 칩으로 분리된다. 따라서, 절단된 금속 와이어의 상단이 봉지제에서 노출되어지고, 이 부분에 범프가 형성되어 솔더 볼이 부착된다.
상기 3가지 방안과는 완전히 다른 방안으로서, 홈부를 봉지제로 몰딩하지 않고, 반도체 칩의 상부에 세라믹 재질의 캡이 설치된다. 금속 와이어는 첫 번째 방안과 같이, 양단이 본딩 패드와 절연 패드에 연결된다. 캡에는 금속 와이어의 중간부가 인출되는 인출홈이 형성되어서, 인출홈을 통해 노출된 금속 와이어 부분에 범프가 형성되어 솔더 볼이 부착된다.
상기된 본 발명의 구성에 의하면, 반도체 칩에 형성된 홈부내에서 와이어 본딩이 이루어지고, 따라서 봉지제도 홈부내만 몰딩하면 되므로, 반도체 칩의 두께가 거의 패키지의 두께가 되므로써, 패키지의 경박화가 실현된다.
이하, 본 발명의 바람직한 실시예를 첨부도면에 의거하여 설명한다.
먼저, 본 실시예들을 상술하기 전에, 첨부된 도면들에서 반도체 칩은 180。로 뒤집어진 상태이다. 이는, 본 발명에 따라 패키지를 제조할 때, 반도체 칩의 밑면에 각종 공정이 실시되므로, 첨부도면에서는 패키지를 180。로 뒤집어진 상태로 도시하였다.
<실시예 1>
먼저, 본 실시예 1에 따른 최종 완성품인 볼 그리드 어레이 패키지의 구조를 도 10을 참고로 하여 설명하면 다음과 같다.
도시된 바와 같이, 뒤집어진 상태의 반도체 칩(10)의 상부, 즉 회로가 형성된 부분에 U자 형상의 홈부(11)가 형성된다. 홈부(11)의 저면 중앙에 한 쌍의 본딩 패드(20)가 형성되고, 양측으로는 한 쌍의 절연 패드(30)가 형성된다. 각 패드(20,30)가 금속 와이어(40)로 연결되는데, 특히 금속 와이어(40)의 중간부는 반도체 칩(10)의 양측 상단에서 약간 돌출되게 굴곡진 형상으로 이루어진다.
봉지제(50)가 홈부(11)내에만 도포되어, 홈부(11) 전체를 몰딩하게 된다. 따라서, 봉지제(50)의 높이는 반도체 칩(10)의 양측 상단 높이와 동일하게 되고, 특히 금속 와이어(40)의 중간부가 봉지제(50)에서 약간 돌출되어진다. 금 재질의 범프(60)가 돌출된 금속 와이어(40) 부분에 형성되고, 이 범프(60)에 솔더 볼(70)이 부착된다. 따라서, 상기와 같은 구조의 패키지의 두께는 반도체 칩(10)의 두께와 동일하게 된다.
이하, 상기와 같은 구조의 패키지의 제조 과정을 첨부도면을 참고로 하여 순차적으로 설명한다.
먼저, 도 2에서와 같이, 회로가 형성될 부위인 반도체 칩(10)의 상부면에 U자 형상의 홈부(11)를 식각하여 형성한다. 이때, 홈부(11)의 폭은 200 내지 400 ㎛로, 깊이는 250 내지 400㎛인 것이 바람직하다. 그런 다음, 도 3과 같이, 홈부(11)의 저면 중앙에 한 쌍의 본딩 패드(20)를 형성하고, 양측으로는 절연 패드(30)를 부착한다.
절연 패드(30)는 도 4에 도시된 바와 같이, 접착층(31) 상부에 U자 형상의 홈부가 형성되고, 이 홈부내에 홈부의 깊이와 동일 두께를 갖는 금속층(32)이 수용되며, 금속층(32)의 상부에 와이어 본딩이 용이하도록 금속박막(33)이 코팅된 구조로 이루어진다. 여기서, 접착층(31)의 재질은 폴리머 계열의 폴리이미드이고, 금속층(32)의 재질은 알루미늄(Al), 동(Cu), 니켈(Ni), 금(Au), 은(Ag), 크롬(Cr), 코발트(Co), 또는 주석(Sn)이거나 이들의 합금이고, 금속박막(33)의 재질은 이후에 실시될 금속 와이어와의 열압착시 접착력이 우수한 금(Au), 은(Ag), 또는 크롬인 것이 바람직하다. 한편, 접착층(31)의 두께는 10 내지 100 ㎛이고, 절연 패드(30)의 두께는 1 내지 4 mil인 것이 바람직하다.
이어서, 도 5와 같이, 금속 와이어(40)로 본딩 패드(20)와 절연 패드(30), 즉 금속박막(33)을 열압착으로 연결한다. 이때, 금속 와이어(40)의 굴곡진 중간부가 반도체 칩(10)의 양측 상단보다 높게 위치하도록 한다.
그런 다음, 디스펜서(80)를 사용하여, 도 6과 같이, 홈부(11)내에 봉지제(50)를 도포하여 몰딩한다. 특히, 봉지제(50)의 높이가 반도체 칩(10)의 양측 상단 높이와 동일하게 몰딩한다.
이때, 금속 와이어(40)는 반도체 칩(10)의 양측 상단보다 높게 위치하고 있지만, 봉지제(50) 도포시, 봉지제(50)내로 함몰되어 노출되지 않게 될 우려가 있으므로, 도 7과 같이, 봉지제(50)의 표면에 노즐(9)을 통해서 연마제를 분사하여, 금속 와이어(40)를 봉지제(50)에서 돌출시킨다. 연마제 대신에 연마 페이퍼를 사용하여 그라인딩을 하여도 무방하다.
이어서, 도 8과 같이, 봉지제(50)에서 돌출된 금속 와이어(40) 부분에 금 재질의 범프(60)를 형성하고, 도 9와 같이 서로 연결되어 있는 수 개의 반도체 칩(10)을 절단하여 개개의 칩으로 분리한다.
최종적으로, 도 10과 같이, 솔더 볼(70)을 범프(60)에 부착하면, 본 실시예 1에 따른 볼 그리드 어레이 패키지가 완성된다. 즉, 도 10에 도시된 패키지를 180。로 뒤집으면, 솔더 볼(70)이 하부에 위치하게 되므로, 솔더 볼(70)을 기판에 실장할 수가 있게 된다.
<실시예 2>
본 실시예 2는 실시예 1에서 사용된 절연 패드를 사용하지 않는 방식이다.
즉, 도 11에 도시된 바와 같이, U자 형상의 홈부(11)가 형성된 반도체 칩(10)의 양측 상단에 더미 패드(34)가 형성되어서, 더미 패드(34)와 본딩 패드(20)가 금속 와이어(44)로 연결된다. 따라서, 더미 패드(34)측 금속 와이어(44) 부분은 자연적으로 반도체 칩(10)의 양측 상단보다 높게 돌출되어진다.
이어서, 홈부(11)내를 봉지제(50)로 몰딩한 후, 반도체 칩(10)의 양측 상단을 기준으로 그라인딩하면, 더미 패드(34)와 이에 연결된 금속 와이어(44)의 상단이 절단되어 제거된다. 그러므로, 절단된 금속 와이어(44)의 상단이 봉지제(50)에서 노출되고, 이 노출된 금속 와이어(44)에 범프(60)가 형성된다. 범프(60)에 솔더 볼(70)을 부착하면, 도 12와 같이 본 실시예 2에 따른 패키지가 완성된다.
<실시예 3>
본 실시예 3은 상기 실시예 1 및 2에서 사용되는 절연 패드나 더미 패드를 전혀 사용하지 않은 방식이다.
즉, 도 13에 도시된 바와 같이, 개개의 칩으로 분리되기 전 상태로서 서로 연결된 수 개의 반도체 칩(10) 각각에 홈부(11)가 형성된다. 각 홈부(11)의 저면 중앙에는 본딩 패드(20)가 형성된다. 금속 와이어(45)가 서로 이웃하는 반도체 칩(10)의 측벽을 넘어서 그의 양단이 각 홈부(11)의 본딩 패드(20)를 연결하게 된다.
봉지제(50)가 홈부(11)를 몰딩하게 되고, 절단 공정에 의해 반도체 칩(10)을 개개의 칩으로 분리한다. 이때, 금속 와이어(45)도 절단되어 분리된다. 이어서, 봉지제(50)가 측벽 높이를 기준으로 그라인딩되는데, 이때 절단된 금속 와이어(45) 부분이 봉지제(50)에서 노출된다. 따라서, 도 14와 같이, 노출된 각 금속 와이어(45) 부분에 범프(60)를 형성하고, 솔더 볼(70)을 범프(60)에 부착하면, 본 실시예 3에 따른 패키지가 완성된다.
<실시예 4>
본 실시예 4에서는 실시예 1에서의 와이어 본딩 방식은 동일하지만, 봉지제가 사용되지 않고 세라믹 캡이 대신 사용된다.
즉, 도 15에 도시된 바와 같이, 반도체 칩(10)의 홈부(11)에 형성된 본딩 패드(20)와 절연 패드(30)가 금속 와이어(40)로 연결된다. 홈부(11)가 봉지제로 몰딩되는 대신에, 반도체 칩(10) 상부에 세라믹 캡(100)이 씌워진다. 세라믹 캡(100)은 반도체 칩(10)에 접착제(110)로 부착된다. 세라믹 캡(100)에는 도 16에 도시된 바와 같이, 인출홈(101)이 형성되어서, 이 인출홈(101)을 통해 금속 와이어(40)가 인출된다. 인출된 금속 와이어(40)가 인출홈(101)으로 빠지지 않도록 하기 위해서, 펀치로 금속 와이어(40)를 압착하여, 인출홈(101)의 저면에 고정시킨다.
그런 다음, 도 17과 같이, 금속 와이어(40)에 범프(60)를 부착하고, 솔더 볼(70)을 범프(60)에 부착하면, 도 18과 같이 본 실시예 4에 따른 패키지가 완성된다.
한편, 도 18과 같은 구조의 패키지가 여러 개로 구성된 것을, 기판(220)에 실장한 후, 전체 상부에 접착제(210)를 사용해서 세라믹 캡슐(200)을 씌우면, 최종적인 패키지가 완성된다.
이상에서 설명한 바와 같이, 봉지제가 반도체 칩에 형성된 홈부내에만 도포되므로, 반도체 칩의 두께가 바로 패키지의 두께가 되므로써, 패키지의 경박화가 실현된다.
종래에 사용되던 탭 테이프 대신에 금속 와이어를 사용하므로써, 패드나 솔더 볼 위치 변경에 즉각적인 대응이 가능하다. 즉, 설계 변경이 매우 간단해진다.
이상에서는 본 발명에 의한 패키지를 실시하기 위한 바람직한 실시예에 대하여 도시하고 또한 설명하였으나, 본 발명은 상기한 실시예에 한정되지 않고, 이하 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진자라면 누구든지 다양한 변경 실시가 가능할 것이다.

Claims (7)

  1. 회로가 구성되는 상부면에 홈부가 형성되고, 상기 홈부의 저면 중앙에 한 쌍의 본딩 패드가 배치된 반도체 칩;
    일측이 상기 본딩 패드에 연결된 금속 와이어;
    상기 금속 와이어의 타측이 돌출되도록, 상기 홈부내를 몰딩하는 봉지제;
    상기 봉지제에서 돌출된 금속 와이어에 부착되는 범프; 및
    상기 범프에 부착된 솔더 볼을 포함하는 볼 그리드 어레이 패키지.
  2. 제 1 항에 있어서, 상기 홈부의 저면 양측에 절연 패드가 부착되고, 상기 절연 패드에 금속 와이어의 타측이 연결되며, 상기 금속 와이어의 중간부가 봉지제에서 돌출된 것을 특징으로 하는 볼 그리드 어레이 패키지.
  3. 제 2 항에 있어서, 상기 절연 패드는 반도체 칩에 부착되고, 상부면에 홈부가 형성된 접착층과; 상기 접착층의 홈부내에 형성되어, 상기 금속 와이어가 연결된 금속층을 포함하는 것을 특징으로 하는 볼 그리드 어레이 패키지.
  4. 제 3 항에 있어서, 상기 금속층의 표면은 접착층의 양측 상단과 동일 평면이고, 상기 금속층의 표면에 금속 와이어가 연결되는 금속박막이 형성된 것을 특징으로 하는 볼 그리드 어레이 패키지.
  5. 제 3 항 또는 제 4 항에 있어서, 상기 접착층의 재질은 폴리머 계열의 폴리이미드이고, 상기 금속층의 재질은 알루미늄, 동, 니켈, 금, 은, 코발트, 또는 주석 중 하나이거나 이들 중 수 개로 이루어진 합금이며, 상기 금속박막의 재질은 은, 금 또는 크롬 중 하나인 것을 특징으로 하는 볼 그리드 어레이 패키지.
  6. 회로가 구성되는 상부면에 홈부가 형성된 반도체 칩;
    상기 반도체 칩의 홈부 저면 중앙에 형성된 한 쌍의 본딩 패드;
    상기 반도체 칩의 홈부 저면 양측에 부착된 한 쌍의 절연 패드;
    상기 절연 패드와 본딩 패드를 연결하는 금속 와이어;
    상기 반도체 칩의 양측 상단에 부착되고, 상기 금속 와이어의 중간부가 인출되는 인출홈이 형성된 캡;
    상기 캡의 인출홈을 통해 노출된 금속 와이어에 부착되는 범프; 및
    상기 범프에 부착된 솔더 볼을 포함하는 볼 그리드 어레이 패키지.
  7. 서로의 측면이 연결된 상태인 각 반도체 칩의 상부면에 홈부를 형성하는 단계;
    상기 각 홈부의 저면에 한 쌍의 본딩 패드를 형성하는 단계;
    금속 와이어로 어느 한 홈부의 본딩 패드와 이웃하는 홈부의 본딩 패드를 연결하는 단계;
    상기 각 반도체 칩의 홈부를 봉지제로 몰딩하는 단계;
    상기 각 반도체 칩을 절단하여 개개의 칩으로 분리함과 동시에 상기 금속 와이어의 중간부를 절단하는 단계;
    상기 반도체 칩의 양측 상단 높이를 기준으로 봉지제를 그라인딩하여, 상기 금속 와이어의 절단된 부분을 봉지제에서 돌출시키는 단계;
    상기 봉지제에서 돌출된 금속 와이어 부분에 범프를 부착하는 단계; 및
    상기 범프에 솔더 볼을 부착하는 단계를 포함하는 볼 그리드 어레이 패키지 제조 방법.
KR1019980025015A 1998-06-29 1998-06-29 볼 그리드 어레이 패키지 및 그의 제조 방법 KR100265563B1 (ko)

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TW088110395A TW419761B (en) 1998-06-29 1999-06-22 Chip size package and method of fabricating the same
US09/339,094 US6211461B1 (en) 1998-06-29 1999-06-23 Chip size package and method of fabricating the same
CNB991088646A CN1211854C (zh) 1998-06-29 1999-06-28 芯片尺寸封装及其制造方法
GB9915229A GB2339334B (en) 1998-06-29 1999-06-29 Chip size package and method of fabricating the same
JP18393299A JP4400898B2 (ja) 1998-06-29 1999-06-29 チップサイズパッケージ及びその製造方法
US09/782,699 US6519846B2 (en) 1998-06-29 2001-02-13 Chip size package and method of fabricating the same

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GB9915229D0 (en) 1999-09-01
US6211461B1 (en) 2001-04-03
US20010035294A1 (en) 2001-11-01
GB2339334A (en) 2000-01-19
CN1241815A (zh) 2000-01-19
CN1211854C (zh) 2005-07-20
TW419761B (en) 2001-01-21
JP2000036549A (ja) 2000-02-02
KR100265563B1 (ko) 2000-09-15
US6519846B2 (en) 2003-02-18
JP4400898B2 (ja) 2010-01-20

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