KR20000003174A - 박막 트랜지스터의 제조방법 - Google Patents
박막 트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR20000003174A KR20000003174A KR1019980024340A KR19980024340A KR20000003174A KR 20000003174 A KR20000003174 A KR 20000003174A KR 1019980024340 A KR1019980024340 A KR 1019980024340A KR 19980024340 A KR19980024340 A KR 19980024340A KR 20000003174 A KR20000003174 A KR 20000003174A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- amorphous silicon
- forming
- plasma
- ohmic contact
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000010409 thin film Substances 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 B 2 H 6 Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
- 상부면에 게이트 전극이 형성되고, 상기 게이트 전극이 덮혀지도록 상부면 전면에 게이트 절연막이 도포된 기판을 제공하는 단계;상기 게이트 절연막 상에 반도체층을 형성하기 제1비정질실리콘층과 에치 스톱퍼를 형성하기 위한 금속층을 순차적으로 형성하는 단계;상기 금속층을 식각하여 게이트 전극 상부의 제1비정질실리콘층 부분 상에 에치 스톱퍼를 형성하는 단계;상기 에치 스톱퍼 양측의 노출된 제1비정질실리콘층 표면을 소정 가스로 플라즈마 처리한 후, 상기 플라즈마 처리된 제1비정질실리콘층 표면에 플라즈마 방식으로 불순물을 도핑하는 단계:전체 상부에 오믹 접촉층을 형성하기 위한 제2비정질실리콘층을 형성하는 단계;상기 제2비정질실리콘층을 소정 가스로 플라즈마 처리한 후, 상기 플라즈마 처리된 제2비정질실리콘층에 플라즈마 방식으로 불순물을 도핑하는 단계;상기 게이트 절연막이 노출되도록 상기 제2 및 제1비정질실리콘층을 식각하여 오믹 접촉층 및 반도체층을 형성하는 단계; 및상기 오믹 접촉층 상에 소오스/드레인 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 1 항에 있어서, 상기 제1 및 제2비정질실리콘층에 대한 플라즈마 처리는 수소 및 SiF4가스를 이용하여 수행하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 1 항에 있어서, 상기 오믹 접촉층은 10 내지 1,000Å 두께로 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980024340A KR100328847B1 (ko) | 1998-06-26 | 1998-06-26 | 박막트랜지스터의제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980024340A KR100328847B1 (ko) | 1998-06-26 | 1998-06-26 | 박막트랜지스터의제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000003174A true KR20000003174A (ko) | 2000-01-15 |
KR100328847B1 KR100328847B1 (ko) | 2002-08-14 |
Family
ID=19540923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980024340A KR100328847B1 (ko) | 1998-06-26 | 1998-06-26 | 박막트랜지스터의제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100328847B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020034582A (ko) * | 2000-11-02 | 2002-05-09 | 전주범 | 정전용량의 변화를 이용한 전자렌지의 키 장치 |
US20100200860A1 (en) * | 2003-11-12 | 2010-08-12 | Chun-Gi You | Thin Film Transistor Array Panel and Manufacturing Method Thereof |
KR101642271B1 (ko) * | 2015-03-31 | 2016-07-25 | 주식회사 디씨티 | 도판트가 도핑된 실리콘 나노소재 제조방법 및 이의 국부적 도핑방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101383705B1 (ko) | 2007-12-18 | 2014-04-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터를 포함하는 표시 장치및 그 제조 방법 |
KR101628254B1 (ko) | 2009-09-21 | 2016-06-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
KR20130136063A (ko) | 2012-06-04 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101447998B1 (ko) * | 2013-11-22 | 2014-10-14 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
-
1998
- 1998-06-26 KR KR1019980024340A patent/KR100328847B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020034582A (ko) * | 2000-11-02 | 2002-05-09 | 전주범 | 정전용량의 변화를 이용한 전자렌지의 키 장치 |
US20100200860A1 (en) * | 2003-11-12 | 2010-08-12 | Chun-Gi You | Thin Film Transistor Array Panel and Manufacturing Method Thereof |
KR101642271B1 (ko) * | 2015-03-31 | 2016-07-25 | 주식회사 디씨티 | 도판트가 도핑된 실리콘 나노소재 제조방법 및 이의 국부적 도핑방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100328847B1 (ko) | 2002-08-14 |
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