KR20000001679A - Reflection type liquid crystal display device and production method thereof - Google Patents
Reflection type liquid crystal display device and production method thereof Download PDFInfo
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- KR20000001679A KR20000001679A KR1019980022044A KR19980022044A KR20000001679A KR 20000001679 A KR20000001679 A KR 20000001679A KR 1019980022044 A KR1019980022044 A KR 1019980022044A KR 19980022044 A KR19980022044 A KR 19980022044A KR 20000001679 A KR20000001679 A KR 20000001679A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Abstract
Description
본 발명은 액정표시소자에 관한 것으로, 특히 요철형상의 반사전극을 구비한 반사형 액정표시소자 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a reflective liquid crystal display device having a concave-convex reflection electrode and a manufacturing method thereof.
액정표시소자는 수광형소자이므로, 별도의 광원을 필요로 하는 투과형과 외부로부터의 빛을 이용하는 반사형의 두 종류로 분류할 수 있는데, 일반적으로 백라이트(back light)를 광원으로 사용하는 투과형 액정표시소자가 널리 상용되고 있다. 그러나, 백라이트의 사용은 액정표시소자의 소형화에 장애가 될 뿐만 아니라 소비전력이 높고, 또한 전원이 없는 곳에서는 백라이트를 사용할 수 없으므로 액정표시소자의 사용 자체가 불가능하다는 단점을 갖고 있었다. 이와 같은 백라이트가 내장된 액정표시소자의 단점들을 극복하고자 최근에는 백라이트를 사용하지 않고, 외부로부터의 빛을 광원으로 이용하는 반사형 액정표시소자에 대한 연구가 활발하게 진행되고 있다.Since liquid crystal display devices are light-receiving devices, they can be classified into two types: a transmissive type requiring a separate light source and a reflective type using light from the outside. Generally, a transmissive liquid crystal display using a back light as a light source. Devices are widely used. However, the use of the backlight not only hinders the miniaturization of the liquid crystal display, but also has a disadvantage in that the use of the liquid crystal display is not possible because the backlight cannot be used where the power consumption is high and there is no power supply. In order to overcome the shortcomings of the liquid crystal display device having a backlight built-in, a research on a reflective liquid crystal display device using light from the outside as a light source has been actively conducted in recent years.
상기한 반사형 액정표시소자에서 가장 큰 관심은 주변광을 얼마만큼 효율적으로 이용하느냐 하는 것이다. 이러한 관점에서 최근에는 셀의 내부 또는 외부에 광보상필름을 부착한다거나, 반사판의 구조를 변화시켜 반사되는 광의 산란을 유발하는 등의 여러 가지 방법이 제안되고 있다.In the above-described reflective liquid crystal display device, the greatest concern is how much efficient use of ambient light is. Recently, various methods have been proposed, such as attaching an optical compensation film to the inside or outside of a cell or changing the structure of a reflector to cause scattering of reflected light.
미국특허 5,500,750호에서는 광의 효율적인 이용을 위하여 반사판의 표면이 요철형상으로 형성된 반사판을 제안하고 있다. 상기 특허에서는 한쌍의 기판 사이에 액정층이 형성되고, 하판 위에는 감광성 수지로 이루어진 융기(bump)가 형성되어 있으며, 그 위에 절연막과 반사전극이 연속 적층되어 있는 구조를 취한다. 박막트랜지스터(thin film transistor, 이하, TFT) 위의 반사전극은 전기적으로 절연된, 차광층으로서의 역할만을 수행하며, 상판에는 대향전극이 형성되어 있고, 블랙필터가 이웃하는 반사전극 사이의 오픈영역을 차단하고 있다.U.S. Patent 5,500,750 proposes a reflecting plate in which the surface of the reflecting plate has an uneven shape for efficient use of light. In this patent, a liquid crystal layer is formed between a pair of substrates, a bump made of a photosensitive resin is formed on a lower plate, and an insulating film and a reflective electrode are successively stacked thereon. The reflective electrode on the thin film transistor (hereinafter referred to as TFT) only serves as a light shielding layer that is electrically insulated. The counter electrode is formed on the upper plate, and the black filter opens an open area between adjacent reflective electrodes. Blocking
그러나, 상기한 반사형 액정표시소자는 제조공정이 복잡할 뿐만 아니라, 주변광을 이용하는데 있어 비효율적인 구조를 제안하고 있다. 즉, 빛이 입사되는 방향에 차광층이 형성되어 있어 빛의 입사면적을 제한할 뿐만 아니라, 상/하판 합착시 두 기판이 어긋나면, 하판에 형성된 반사전극 사이의 오픈영역에서 빛샘(light leakage)현상이 발생하게 되어 표시품질을 저하시키기 때문에 합착공정이 매우 까다로워 진다.However, the reflective liquid crystal display device has a complicated manufacturing process and proposes an inefficient structure for using ambient light. That is, the light shielding layer is formed in the direction of light incidence, not only to limit the incident area of light, but also when the two substrates are shifted when the upper and lower plates are bonded, light leakage in the open area between the reflective electrodes formed on the lower plate. The phenomenon occurs, which degrades the display quality, which makes the bonding process very difficult.
본 발명은 상기한 종래 기술의 문제점을 감안하여 이루어진 것으로서, TFT기판 위의 보호막의 기능을 갖는 포토레지스트막을 부분식각하여 굴곡을 형성하고, 그 위에 반사전극을 형성하므로써 간단한 공정으로 광효율이 우수한 반사형 액정표시소자를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and is formed by bending a photoresist film having a function of a protective film on a TFT substrate to form a bend, and forming a reflective electrode thereon, thereby forming a reflection type with excellent light efficiency in a simple process. It is an object to provide a liquid crystal display device.
본 발명의 다른 목적은 상기한 액정표시소자의 TFT기판 위에 차광층을 형성하므로써 이웃하는 반사전극의 오픈영역에서 발생할 수 있는 빛의 누설을 방지하고, 입사되는 빛의 효율을 높이는 것이다.Another object of the present invention is to form a light shielding layer on the TFT substrate of the liquid crystal display device to prevent leakage of light that may occur in an open region of neighboring reflective electrodes and to improve the efficiency of incident light.
상기한 목적을 달성하기 위하여, 본 발명에 따른 액정표시소자는 그 사이에 액정층을 게재하고 있는 TFT기판 및 대향기판과, TFT기판 위에 형성된 감광성수지로 이루어진 포토레지스트막과, 상기 포토레지스트막 위에서 데이터배선 및 게이트배선의 일부를 덮고 컨택홀을 통하여 박막트랜지스터의 드레인전극에 전기적으로 접속된 반사전극과, 이웃하는 반사전극 사이의 오픈영역 위에 형성되어 빛의 누설을 방지하는 차광층과, 상기 반사전극 및 차광층 위에 형성된 제1배향막과, 대향기판 위에 형성되고 상기 반사전극과 함께 액정층에 전압을 인가하여 액정을 구동하는 투명한 대향전극과, 대향전극 위에 형성된 제2배향막을 주요 구성요소로 함을 특징으로 한다.In order to achieve the above object, the liquid crystal display device according to the present invention comprises a TFT substrate and a counter substrate having a liquid crystal layer interposed therebetween, a photoresist film formed of a photosensitive resin formed on the TFT substrate, and on the photoresist film. A light blocking layer covering a part of the data wiring and the gate wiring and electrically connected to the drain electrode of the thin film transistor through a contact hole, and a light blocking layer formed on an open region between neighboring reflective electrodes to prevent leakage of light; The main components include a first alignment layer formed on the electrode and the light shielding layer, a transparent counter electrode formed on the counter substrate and driving the liquid crystal by applying a voltage to the liquid crystal layer together with the reflective electrode, and a second alignment layer formed on the counter electrode. It is characterized by.
본 발명의 다른 실시예에서는 데이터배선 뿐만 아니라 TFT영역 위에 오픈영역이 존재하며, 각각의 오픈영역 위에는 차광층이 형성되어 입사되는 빛의 효율을 극대화하는 동시에 오픈영역에서 발생할 수 있는 빛의 누설을 방지한다.In another embodiment of the present invention, an open area exists in the TFT area as well as data wiring, and a light shielding layer is formed on each open area to maximize light efficiency and prevent light leakage that may occur in the open area. do.
본 발명의 액정표시소자를 제조하는 방법은 먼저, TFT기판에 감광성 폴리머수지로 포토레지스트막을 형성한 후, 포토레지스막의 표면을 부분식각하여 그 표면이 연속된 굴곡을 갖게한다. 그후, 포토레지스트막의 굴곡진 표면을 따라 반사전극을 형성하고, 그 위에 제1배향막을 형성한다. 대향기판쪽에는 대향전극을 형성한 후, 그 위에 제2배향막을 형성한다. 계속해서, 두 기판을 일정한 셀갭하에서 합착한 후 그 사이에 액정을 주입하여 액정표시소자를 완성한다.In the method of manufacturing the liquid crystal display device of the present invention, first, a photoresist film is formed of a photosensitive polymer resin on a TFT substrate, and then the surface of the photoresist film is partially etched so that the surface has continuous bending. Thereafter, a reflective electrode is formed along the curved surface of the photoresist film, and a first alignment film is formed thereon. After the counter electrode is formed on the counter substrate side, a second alignment film is formed thereon. Subsequently, the two substrates are bonded together under a constant cell gap, and then liquid crystal is injected therebetween to complete the liquid crystal display device.
도 1a는 본 발명의 제1실시예에 따른 반사형 액정표시소자의 평면도.1A is a plan view of a reflective liquid crystal display device according to a first embodiment of the present invention.
도 1b는 도 1a의 A-A선에 따른 단면도.1B is a cross-sectional view taken along the line A-A of FIG. 1A.
도 2a는 본 발명의 제1실시예에 따른 반사형 액정표시소자의 평면도.2A is a plan view of a reflective liquid crystal display device according to a first embodiment of the present invention.
도 2b는 도 2a의 B-B선에 따른 단면도.FIG. 2B is a cross sectional view along line B-B in FIG. 2A; FIG.
도 3은 도 1a의 C영역의 단면도.3 is a cross-sectional view of region C of FIG. 1A;
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>
10a----TFT기판 10b----대향기판10a ---- TFT substrate 10b ---- Optical substrate
12-----게이트전극 14-----게이트절연막12 ----- gate electrode 14 ----- gate insulating film
16-----반도체층 18-----오믹컨택층16 ----- semiconductor layer 18 ----- omic contact layer
19a----소스전극 19b----드레인전극19a ---- source electrode 19b ---- drain electrode
20-----데이터배선 22-----포토레지스트막20 ----- Data Wiring 22 ----- Photoresist Film
24-----차광층 26-----반사전극24 ----- Shading Layer 26 ----- Reflective Electrode
28-----컨택홀 29-----대향전극28 ----- contact hole 29 ----- counter electrode
30a----제1배향막 30b----제2배향막30a ---- first alignment layer 30b ---- second alignment layer
이하, 본 발명의 바람직한 실시예를 도면을 참조하여 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
도 1a는 본 발명의 제1실시예에 따른 반사형 액정표시소자의 평면도, 도 1b는 도 1a의 A-A선에 따른 단면도로서, 도면에 나타내듯이, TFT기판(제1기판,10a) 위에는 게이트배선(11), 데이터배선(20) 및 게이트전극(12)이 형성되어 있고, 그 위에 게이트절연막(14)이 기판(10a) 전체에 걸쳐 형성되어 있다. 게이트절연막(14) 위에는 상기 게이트전극(12)과 함께 TFT를 구성하는 반도체층(16), 오믹컨택층(18), 소스전극(19a) 및 드레인전극(19b)이 형성되어 있다. 상기 TFT영역 및 데이터배선(20) 위에는 그 표면이 연속된 굴곡형상을 한 포토레지스트막(22)이 형성되어 있다. 포토레지스트막(22) 위에는 차광층(24)이 형성되며, 반사전극(26)은 상기 포토레지스트막(22)의 형태를 따라 컨택홀(28)을 통하여 드레인전극(19b)에 접속되고, 그 위를 제1배향막(30a)이 덮고 있다. 대향기판(제2기판,10b) 위에는 상기 반사전극(26)과 함께 액정층에 전계를 인가하여 액정을 구동하는 대향전극(29)과 R,G,B의 컬러필터소자로 이루어진 컬러필터층(도시하지 않음)이 형성되고, 그 위를 제2배향막(30b)이 덮고 있다.FIG. 1A is a plan view of a reflective liquid crystal display device according to a first exemplary embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA of FIG. 1A. As shown in the drawing, a gate wiring is formed on a TFT substrate (first substrate 10a). (11), data wirings 20 and gate electrodes 12 are formed, and a gate insulating film 14 is formed over the entire substrate 10a. On the gate insulating film 14, a semiconductor layer 16, an ohmic contact layer 18, a source electrode 19a and a drain electrode 19b constituting the TFT are formed together with the gate electrode 12. On the TFT region and the data wiring 20, a photoresist film 22 having a curved shape with a continuous surface thereof is formed. A light blocking layer 24 is formed on the photoresist film 22, and the reflective electrode 26 is connected to the drain electrode 19b through the contact hole 28 in the form of the photoresist film 22. The first alignment layer 30a covers the top. On the counter substrate (second substrate 10b), a color filter layer comprising an opposing electrode 29 for driving a liquid crystal by applying an electric field to the liquid crystal layer together with the reflective electrode 26 and a color filter element of R, G, and B (not shown). (Not shown) is formed, and the second alignment film 30b is covered thereon.
상기한 구조를 갖는 액정표시소자의 제조방법을 도 2b를 참조하여 설명한다.A method of manufacturing a liquid crystal display device having the above structure will be described with reference to FIG. 2B.
먼저, 기판(10a) 위에 Ta, Cr, 또는 Al 등을 스퍼터링법으로 적층한 후, 패터닝하여 게이트전극(12)을 형성한다. 그후, SiNx 또는 SiOx와 같은 무기물을 PECVD(plasma enhanced chemical vapor deposition)법으로 적층하여 게이트절연막(14)을 형성한 후, 계속해서, a-Si:H 및 n+a-Si:H와 같은 물질을 PECVD법으로 적층한 후, 패터닝하여 반도체층(16) 및 오믹컨택층(18)을 형성하고, Ti, Cr/Al, Cr/Al-Ta, 또는 Cr/Al/Al-Ta같은 물질을 스퍼터링법으로 적층하여 소스전극(19a), 드레인전극(19b), 그리고 데이터배선(20)을 형성한다.First, Ta, Cr, Al, and the like are stacked on the substrate 10a by sputtering, and then patterned to form the gate electrode 12. Thereafter, an inorganic material such as SiNx or SiOx is deposited by plasma enhanced chemical vapor deposition (PECVD) to form a gate insulating film 14, and then a material such as a-Si: H and n + a-Si: H And then patterned to form semiconductor layer 16 and ohmic contact layer 18, and sputtering a material such as Ti, Cr / Al, Cr / Al-Ta, or Cr / Al / Al-Ta The source electrode 19a, the drain electrode 19b, and the data wiring 20 are formed by laminating by the method.
TFT영역 및 데이터배선(20) 위의 포토레지스트막(22)의 패터닝은, 먼저, 아크릴 수지(acrylic resin)와 같은 감광성 폴리머수지를 도포한 후, 그 표면을 임의의 형태의 홀을 보유하는 마스크로 차단한 후 광을 조사하는데, 포토레지스트막(22)의 표면은 마스크의 홀을 통해 조사되는 광에 의하여 식각영역 또는 비식각영역으로 나누어지는 부분노광을 한다. 이때, 식각영역은 0.1∼0.5d가 바람직한데, 여기서 d는 포토레지스트막의 두께를 나타내며 대부분 1∼5㎛의 범위안에 존재한다. 계속해서, 포토레지스트막(22)의 표면이 굴곡을 형성하도록 현상액(developer)을 이용하여 부분식각(partially development)한다. 상기한 과정에서 포토레지스트막(22)표면의 굴곡의 형태(산과 골의 단차)는 노광시간(exposing time) 및/또는 현상시간(developing time)에 의하여 좌우되며, 사용되는 빛은 자외선이 바람직하다. 계속해서, Al 또는 Ag와 같은 고반사율의 금속을 증착법 또는 스퍼터링법으로 상기 포토레지스트막(22) 위에 적층하여 반사전극(26)을 형성하는데, 이 반사전극(26)은 컨택홀(28)을 통하여 TFT의 드레인전극(19b)에 접속된다.The patterning of the photoresist film 22 on the TFT region and the data wiring 20 is performed by first applying a photosensitive polymer resin such as an acrylic resin, and then masking the surface having holes of any shape. The light is irradiated and then irradiated with light. The surface of the photoresist film 22 is partially exposed to an etched or non-etched region by light irradiated through the hole of the mask. At this time, the etching region is preferably 0.1 to 0.5d, where d represents the thickness of the photoresist film and is mostly in the range of 1 to 5 mu m. Subsequently, partial development is carried out using a developer so that the surface of the photoresist film 22 is curved. In the above-described process, the shape of the bend on the surface of the photoresist film 22 (difference between the acid and the valley) depends on the exposing time and / or the developing time, and the light used is preferably ultraviolet light. . Subsequently, a metal having a high reflectance such as Al or Ag is deposited on the photoresist film 22 by a deposition method or a sputtering method to form a reflective electrode 26, which forms the contact hole 28. It is connected to the drain electrode 19b of a TFT through.
도면부호 24는 차광층을 나타내는 것으로서, 하나의 데이터배선(20) 및 게이트배선(11)을 공유하는 이웃하는 반사전극 사이의 오픈영역에 블랙수지(black resin)와 같은 물질을 도포하여 형성한다.Reference numeral 24 denotes a light shielding layer, and is formed by applying a material such as black resin to an open region between one data wiring 20 and a neighboring reflective electrode sharing the gate wiring 11.
반사전극(26) 위에는 폴리실록산(polysiloxanecinnamate), 폴리비닐신나메이트(polyvinylcinnamate) 또는 셀루로즈신나메이트(cellulosecinnamate) 등의 광배향물질을 도포하여 제1배향막(30a)을 형성한다. 그후, 편광되거나, 편광되지 않은 빛을 1회 또는 그 이상 조사하므로써 배향처리하는데, 이때, 상기한 빛은 자외선이 바람직하다. 상기 제1배향막(30a)은 또한, 폴리이미드(polyimide), 폴리아미드(polyamide), 폴리비닐알콜(polyvinylalcohol), 폴리아믹산(polyamic acid) 또는 SiO2등의 물질을 도포하여 형성할 수도 있으며, 이 경우, 러빙(rubbing)법으로 배향처리한다.The first alignment layer 30a is formed on the reflective electrode 26 by applying a photoalignment material such as polysiloxane, polyvinylcinnamate, or cellulosecinnamate. Thereafter, the polarized or unpolarized light is subjected to alignment treatment by one or more irradiations, wherein the light is preferably ultraviolet. The first alignment layer 30a may also be formed by applying a material such as polyimide, polyamide, polyvinylalcohol, polyamic acid, or SiO 2 . In this case, orientation is carried out by a rubbing method.
대향전극(29)은 ITO(indium tin oxide)와 같은 투명금속을 스퍼터링법으로 적층하여 형성한다. 제2배향막(30b)은 상기 제1배향막(30a)에서와 같이 광배향법 또는 러빙법으로 형성할 수 있다.The counter electrode 29 is formed by stacking a transparent metal such as indium tin oxide (ITO) by sputtering. The second alignment layer 30b may be formed by a photoalignment method or a rubbing method as in the first alignment layer 30a.
도 2a는 본 발명의 제2실시예에 따른 반사형 액정표시소자의 평면도, 도 2b는 도 2a의 B-B선에 따른 단면도로서, 제2실시예가 제1실시예와 다른점은 TFT영역의 반사전극을 제거하므로써 전극간에 발생할 수도 있는 이상전계의 발생을 억제하였으며, 그에 따라 차광층이 TFT영역까지 확대된다는 것이다.FIG. 2A is a plan view of a reflective liquid crystal display device according to a second embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along the line BB of FIG. 2A. The second embodiment is different from the first embodiment in that it is a reflective electrode of a TFT region. This suppresses the occurrence of an abnormal electric field that may occur between the electrodes, thereby extending the light shielding layer to the TFT region.
제2실시예에서는 제1실시예에서 사용되었던 도면의 부호가 동일하게 적용된다.In the second embodiment, the same reference numerals as in the drawings used in the first embodiment apply.
도 3은 도 1a의 C영역의 단면도로서, 절연막(14) 위에 형성된 데이터배선(24)은 그 일부를 이웃하는 반사전극(26)들이 공유하고 있으며, 이때 반사전극(26) 사이의 오픈영역은 차광층(24)에 의하여 차단된다. 도면의 부호 30a는 제1배향막을 나타내고 있고, 부호 10a는 TFT기판을 나타낸다.FIG. 3 is a cross-sectional view of region C of FIG. 1A, in which data wirings 24 formed on the insulating film 14 are shared by neighboring reflective electrodes 26, and an open region between the reflective electrodes 26 is shown. It is blocked by the light shielding layer 24. Reference numeral 30a in the drawing denotes a first alignment film, and reference numeral 10a denotes a TFT substrate.
본 발명에 따르면 포토레지스트막을 부분식각하여 연속적인 굴곡을 형성하고, 그 위에 반사전극을 형성하므로써 간단한 공정으로 광효율이 우수한 반사형 액정표시자를 제공하는 것이 가능하다.According to the present invention, it is possible to provide a reflective liquid crystal display excellent in light efficiency by a simple process by partially etching the photoresist film to form continuous bending and forming a reflective electrode thereon.
더구나, 본 발명은 TFT기판 위에 차광층을 형성하므로써 이웃하는 반사전극의 오픈영역에서 발생할 수 있는 빛의 누설을 방지하고, 대향기판을 통하여 입사되는 빛의 효율을 극대화시키며, 기판의 합착공정에 있어서도 매우 유리하다.In addition, the present invention prevents light leakage that may occur in an open region of a neighboring reflective electrode by forming a light shielding layer on the TFT substrate, maximizes the efficiency of light incident through the opposing substrate, and also in the process of bonding the substrate. Very advantageous.
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KR20030044518A (en) * | 2001-11-30 | 2003-06-09 | 에이유 오프트로닉스 코퍼레이션 | A process for manufacturing reflective tft-lcd with rough diffuser |
KR100475110B1 (en) * | 2001-12-26 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | Reflective type Liquid Crystal Display Device and method for manufacturing the same |
KR100617029B1 (en) * | 2001-12-29 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | Method for manufacturing liquid crystal display device |
KR100806893B1 (en) * | 2001-07-03 | 2008-02-22 | 삼성전자주식회사 | thin film transistor array panel for liquid crystal display and manufacturing method thereof |
KR100853633B1 (en) * | 2000-09-14 | 2008-08-25 | 소니 가부시끼 가이샤 | Reflective liquid crystal display device |
KR100924748B1 (en) * | 2002-09-19 | 2009-11-05 | 엘지디스플레이 주식회사 | Reflective liquid crystal display and fabrication method of the same |
KR100936905B1 (en) * | 2002-12-13 | 2010-01-15 | 삼성전자주식회사 | Liquid crystal display apparatus and methode for manufacturing thereof |
WO2017185490A1 (en) * | 2016-04-28 | 2017-11-02 | 武汉华星光电技术有限公司 | Thin film transistor structure and method for manufacturing same |
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JPH03148636A (en) * | 1989-11-06 | 1991-06-25 | Toshiba Corp | Manufacture of active matrix type liquid crystal display element |
KR100191135B1 (en) * | 1996-08-30 | 1999-06-15 | 구자홍 | Light irradiation method |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100853633B1 (en) * | 2000-09-14 | 2008-08-25 | 소니 가부시끼 가이샤 | Reflective liquid crystal display device |
KR100806893B1 (en) * | 2001-07-03 | 2008-02-22 | 삼성전자주식회사 | thin film transistor array panel for liquid crystal display and manufacturing method thereof |
KR20030044518A (en) * | 2001-11-30 | 2003-06-09 | 에이유 오프트로닉스 코퍼레이션 | A process for manufacturing reflective tft-lcd with rough diffuser |
KR100475110B1 (en) * | 2001-12-26 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | Reflective type Liquid Crystal Display Device and method for manufacturing the same |
KR100617029B1 (en) * | 2001-12-29 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | Method for manufacturing liquid crystal display device |
KR100924748B1 (en) * | 2002-09-19 | 2009-11-05 | 엘지디스플레이 주식회사 | Reflective liquid crystal display and fabrication method of the same |
KR100936905B1 (en) * | 2002-12-13 | 2010-01-15 | 삼성전자주식회사 | Liquid crystal display apparatus and methode for manufacturing thereof |
WO2017185490A1 (en) * | 2016-04-28 | 2017-11-02 | 武汉华星光电技术有限公司 | Thin film transistor structure and method for manufacturing same |
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