KR19980026181U - Diffusion Furnace Device of Semiconductor Manufacturing Equipment - Google Patents
Diffusion Furnace Device of Semiconductor Manufacturing Equipment Download PDFInfo
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- KR19980026181U KR19980026181U KR2019960039041U KR19960039041U KR19980026181U KR 19980026181 U KR19980026181 U KR 19980026181U KR 2019960039041 U KR2019960039041 U KR 2019960039041U KR 19960039041 U KR19960039041 U KR 19960039041U KR 19980026181 U KR19980026181 U KR 19980026181U
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- semiconductor manufacturing
- tube
- manufacturing equipment
- diffusion furnace
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 22
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 6
- 150000002367 halogens Chemical class 0.000 claims abstract description 6
- 230000008016 vaporization Effects 0.000 claims description 8
- 238000005137 deposition process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 18
- 239000007789 gas Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Furnace Details (AREA)
Abstract
본 고안은 확산공정이 진행되는 메인튜브와, 상기 공정을 진행시키는 공정가스인 기체소스가 생성되는 소스튜브와, 소스튜브에 설치되어, 고체소스를 가열시켜 기화시키는 가열부를 구비한 반도체 제조장비의 확산로장치에 관한 것으로, 이때 가열부으로는, 순간적인 온도상승과 하강에 유리한, 할로겐램프를 사용함으로써 웨이퍼의 증착공정을 위한 별도의 예열시간이 필요없으며, 확산공정의 안정성 및 작업의 편리성과 안전도를 향상시키기에 적당하다.The present invention provides a semiconductor manufacturing apparatus having a main tube through which a diffusion process is carried out, a source tube through which a gas source, which is a process gas for performing the process, is generated, and a heating unit installed on the source tube to heat and vaporize a solid source. The present invention relates to a diffusion furnace apparatus, in which the heating part uses a halogen lamp, which is advantageous for instantaneous temperature rise and fall, and does not require a separate preheating time for the deposition process of the wafer. It is suitable for improving safety.
Description
제 1도는 종래의 반도체 제조장비의 확산로장치를 도시한 도면이고,1 is a view showing a diffusion furnace device of a conventional semiconductor manufacturing equipment,
제 2도는 본 고안의 반도체 제조장비의 확산로장치를 도시한 도면이다.2 is a view showing a diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
11, 21:단열재12:메인튜브11, 21: insulation 12: main tube
13:소스보트14:소스튜브13: source boat 14: source tube
15:웨이퍼보트16, 17, 26:가열부15: Wafer boat 16, 17, 26: Heater
본 고안은 반도체 제조공정에 사용되는 반도체 제조장비의 확산로장치에 관한 것으로, 특히 반도체 웨이퍼에 매몰층 형성공정에 사용되는 불순물 확산에 있어서 공정상의 안정성 및 작업의 편리를 도모하기에 적당한 반도체 제조장비의 확산로장치에 관한 것이다.The present invention relates to a diffusion furnace apparatus of a semiconductor manufacturing equipment used in a semiconductor manufacturing process, and in particular, semiconductor manufacturing equipment suitable for the process stability and convenience in the diffusion of impurities used in the buried layer forming process on a semiconductor wafer. The present invention relates to a diffusion furnace apparatus.
반도체 제조에 있어서, 불순물을 웨이퍼 상에 도핑하여 확산공정을 개시하는데, 여기에서 도핑방법으로는 고체상태의 불순물에 열을 가하여 기화시킨 후, 이 기체가스를 이용한다.In semiconductor manufacturing, dopants are doped on a wafer to start a diffusion process. In this doping method, a gaseous gas is used after vaporizing by applying heat to impurities in a solid state.
이때, 불순물을 포함한 증기를 발생시키는 소스로는 주로 붕소(B203), 인(P205), 안티모니(Sb203), 비소(As203) 등을 사용하며 이와 같은 소스를 기화(vaporization)시킨 다음, 기화된 소스를 웨이퍼가 적재된 웨이퍼보트로 이동시켜 공정을 진행한다.At this time, as a source for generating a vapor containing impurities, boron (B203), phosphorus (P205), antimony (Sb203), arsenic (As203) and the like are used, and such a source is vaporized and then vaporized The process is performed by moving the source to the waferboat on which the wafer is loaded.
제 1도는 종래의 반도체 제조장비의 확산로장치를 설명하기 위한 도면으로, 제 1도는 종래의 반도체 제조장비의 확산로장치의 단면도이고, 제 1도의 (나)는 제 1도의 (가)의 A-A' 선의 단면도이다.1 is a view for explaining a diffusion furnace device of a conventional semiconductor manufacturing equipment, Figure 1 is a cross-sectional view of the diffusion furnace device of a conventional semiconductor manufacturing equipment, Figure 1 (b) is a AA of Figure 1 (a). It is a cross section of the line.
이하, 첨부된 도면을 참고로 하여 설명하겠다.Hereinafter, with reference to the accompanying drawings will be described.
종래의 반도체 제조장비의 확산로장치는 제 1도와 같이, 그 내부를 이루는 튜브인 확산공정이 진행되는 메인튜브와, 메인튜브에 연결되어 고체소스가 로딩되는 소스튜브를 갖으며, 이때 메인튜브의 내부에는 다수의 웨이퍼(A)가 적재된 웨이퍼보트(15)가 로딩되어, 웨이퍼 상에 확산 공정이 진행되고, 그 가장자리는 제 1가열부(16)가 설치되어, 공정진행 온도를 유지한다.The diffusion furnace apparatus of the conventional semiconductor manufacturing equipment has a main tube through which the diffusion process, which is a tube forming the inside thereof, and a source tube connected to the main tube and loaded with a solid source, as shown in FIG. A wafer boat 15 loaded with a plurality of wafers A is loaded therein, and a diffusion process is performed on the wafer, and a first heating unit 16 is installed at an edge thereof to maintain a process progress temperature.
그리고 소스튜브의 내부에는 고체소스가 인입된 소스보트(13)가 로딩되어 공정가스가 생성되며, 그 가장자리에는 고체소스를 기화시키는 제 2가열부(16)가 설치된다.A source boat 13 into which the solid source is introduced is loaded into the source tube to generate a process gas. At the edge thereof, a second heating unit 16 for vaporizing the solid source is installed.
그리고 공정 중에 가열수단에 의해 발생되는 열이 외부로 발산되는 것을 방지하기 위하여 튜브 가장자리에는 단열재(17)가 설치된다.And in order to prevent the heat generated by the heating means is dissipated to the outside during the process, the heat insulating material 17 is installed.
이와 같이 구성된 확산로장치를 통하여 고체소스를 기화시켜 생성된 공정가스가 웨이퍼 상에 도핑되는 과정을 살펴보면 다음과 같다.The process of doping the process gas generated by vaporizing the solid source through the diffusion furnace device configured as described above is as follows.
우선, 확산로의 메인튜브 내에 다수의 웨이퍼가 적재된 웨이퍼보트가 로딩되고, 소스튜브 내로 고체소스가 인입된 소스보트는 제 2가열부가 설치된 튜브 입구까지 로딩되어 고체소스가 일정온도로 이를 때까지 가열되며, 이때 기화된 가스는 메인튜브 내로 이동하게 된다. 그런 후, 기화된 가스를 이용하여 메인튜브 내의 웨이퍼에 확산공정이 진행된다.First, the wafer boat loaded with a plurality of wafers is loaded into the main tube of the diffusion furnace, and the source boat into which the solid source is introduced into the source tube is loaded to the tube inlet where the second heating unit is installed until the solid source reaches a certain temperature. When heated, the vaporized gas moves into the main tube. Then, the diffusion process proceeds to the wafer in the main tube using the vaporized gas.
여기에서 고체소오스를 기화시키기 위한 제 2가열부로는 주로 니크롬 선의 히팅코일이 사용된다.As the second heating unit for vaporizing the solid source, a heating coil of nichrome wire is mainly used.
그러나, 종래의 반도체 제조장비의 확산로장치에서는 소스보트 내의 고체소스를 기화시키기 가열부로 히팅코일에 의한 유도가열방식이므로, 공정이 진행되기 전에 소스튜브의 별도의 예열시간이 필요하며, 일단 소스튜브가 가열되어 공정이 진행된 후, 소스보트의 교체등의 이유로 일정 온도로 다운시키기 위한 상당한 시간이 요구된다.However, in the diffusion furnace apparatus of the conventional semiconductor manufacturing equipment, since the induction heating method by the heating coil to the heating unit to vaporize the solid source in the source boat, a separate preheating time of the source tube is required before the process proceeds. After the heating is performed and the process proceeds, considerable time is required to bring it down to a constant temperature, for example, to replace a source boat.
따라서 종래의 니크롬선 히팅코일은 서서히 가열되고, 식기 때문에 온도 상승 및 하강시간이 길어짐에 따라 별도의 작업시간이 소요되는 등 작업효율성이 저하되는 문제점이 있다.Therefore, the conventional nichrome wire heating coil is gradually heated, there is a problem that the work efficiency is lowered, such as a separate work time is required as the temperature rise and fall time is longer due to the dishware.
본 고안은 이러한 문제점을 해결하고자 안출된 것으로, 별도의 예열이나 공정 중 온도를 다운시키는데 소요되는 시간을 최소한으로 줄여서, 급속으로 온도상승 및 하강이 가능한 가열부를 갖는 반도체 제조장비의 확산로장치를 목적으로 한다.The present invention was devised to solve such a problem, and the purpose of the diffusion furnace apparatus of the semiconductor manufacturing equipment having a heating part capable of rapidly rising and lowering the temperature by minimizing the time required for separate preheating or temperature down during the process is minimized. It is done.
본 고안의 반도체 제조장비의 확산로장치에서는 순간적인 온도상승과 하강에 유리한, 할로겐램프를 사용함으로써 웨이퍼의 증착공정을 위한 별도의 예열시간이 필요없으며, 확산공정상의 안정성 및 작업의 편리성과 안전도를 향상시키기에 적당하다.In the diffusion furnace device of the semiconductor manufacturing equipment of the present invention, a halogen lamp, which is advantageous for instantaneous temperature rise and fall, does not require a separate preheating time for the deposition process of the wafer. It is suitable for improvement.
제 2도는 본 고안의 반도체 제조장비의 확산로장치를 설명하기 위한 도면으로, 가열부가 설치된 소스튜브의 입구의 평면도이다.2 is a view for explaining the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention, a plan view of the inlet of the source tube is installed.
이하, 첨부된 도면을 참고로 하여 설명하겠다.Hereinafter, with reference to the accompanying drawings will be described.
본 고안의 반도체 제조장비의 확산로장치에는 제 2도의 (가)와 같이, 내부를 이루는 튜브인 확산공정이 진행되는 메인튜브와, 메인튜브에 연결되어 고체소스가 로딩되는 소스튜브를 갖으며, 이때 메인튜브의 내부에는 다수의 웨이퍼가 적재된 웨이퍼보트가 로딩되어, 웨이퍼 상에 확산공정이 진행되고, 그 가장지리는 제 1가열부가 설치되어, 공정진행온도를 유지한다.The diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention, as shown in (a) of FIG. 2, has a main tube through which a diffusion process is performed, and a source tube connected to the main tube and loaded with a solid source, At this time, a wafer boat loaded with a plurality of wafers is loaded in the main tube, and a diffusion process is performed on the wafer, and the first heating unit is installed at the edge thereof to maintain the process progress temperature.
그리고 소스튜브의 내부에는 고체소스가 인입된 소스보트가 로딩되어 공정가스가 생성되며, 그 가장자리에는 고체소스를 기화시키는 제 2가열부가 설치된다.The inside of the source tube is loaded with a source boat into which a solid source is introduced to generate a process gas. At the edge thereof, a second heating unit for vaporizing the solid source is installed.
그리고 공정 중에 가열수단에 의해 발생되는 열이 외부로 발산되는 것을 방지하기 위하여 튜브 가장자리에는 단열재(26)가 설치된다.And in order to prevent the heat generated by the heating means is dissipated to the outside during the process, the heat insulating material 26 is installed.
이때, 본 고안에서 고체소스를 기화시키는 제 2가열부로는 순간적인 온도상승 및 하강이 가능한 할로겐램프가 사용된다.At this time, a halogen lamp capable of instantaneous temperature rise and fall is used as the second heating unit for vaporizing the solid source in the present invention.
본 고안의 반도체 제조장비의 확산로장치를 이용하여 웨이퍼 상에 확산공정이 진행되는 과정을 알아보면 다음과 같다.Looking at the process of the diffusion process on the wafer using the diffusion furnace device of the semiconductor manufacturing equipment of the present invention as follows.
우선, 공정이 진행될 다수의 반도체 웨이퍼가 웨이퍼보트에 적재되어 메인튜브 내로 로딩된다.First, a plurality of semiconductor wafers to be processed are loaded on a wafer boat and loaded into a main tube.
그리고 소스튜브 내에 고체소스가 인입된 소스보트가 로딩되며, 제 2 가열부인 할로겐램프가 부착된 튜브 입구에 위치시킨다.A source boat into which a solid source is introduced is loaded into the source tube, and is placed at the tube inlet to which the halogen lamp, which is the second heating unit, is attached.
이어서 할로겐램프가 온되어 순간적으로 온도가 상승되면서 고체소스가 기화되며, 기화된 고체소스는 메인튜브 내로 이동되어 웨이퍼 상에 확산공정이 개시된다.The halogen lamp is then turned on and the temperature rises momentarily to vaporize the solid source, which is then transferred into the main tube to initiate a diffusion process on the wafer.
이때, 기화된 고체소스가 메인튜브로의 이동이 수월하도록 캐리어가스를 공급하기도 한다.At this time, the vaporized solid source may supply the carrier gas to facilitate the movement to the main tube.
확산공정이 완료되면, 소스보트를 소스튜브로부터 꺼내어 분리 후 새것으로 교체한다.When the diffusion process is complete, remove the source boat from the source tube and remove and replace with a new one.
상기에서 살펴본 바와 같이, 서서히 온도가 상승되고, 하강되는 니크롬선 가열코일을 사용함에 따라, 미리 소스튜브를 예열시킨 후, 고체소스를 기화시켰고, 또한 공정완료 후, 온도를 다운시키는 데 소요되는 시간이 상당히 걸리던 종래의 장치와는 달리, 본 고안의 반도체 제조장비의 확산로장치에서는 할로겐램프를 사용하므로써, 순간적인 온도를 상승시킴으로써 고체소스를 기화시키는데 소요되는 시간이 단축될 뿐만 아니라, 램프의 전원을 오프시에도 급격히 온도가 하강된다.As described above, the time required to lower the temperature after the preheating of the source tube, the vaporization of the solid source, and the completion of the process, as the temperature of the nichrome wire heating coil is gradually raised and lowered. Unlike the conventional apparatus, which took much time, the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention not only shortens the time required to vaporize the solid source by increasing the instantaneous temperature, but also shortens the time required for the lamp power supply. The temperature drops sharply even when turned off.
따라서, 본 고안의 반도체 제조장비의 확산로장치에서는 온도상승 및 하강에 소요되는 시간이 단축되고 또한 시스템 자체가 간단하게 구성됨에 따라 생산효율성이 극대화된다.Therefore, in the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention, the time required for the temperature rise and fall is shortened and the system itself is simply configured, thereby maximizing the production efficiency.
그리고 공정에 소요되는 시간이 단축됨에 따라, 기화된 고체소스에 의한 장치 내의 오염현상을 최소화한다.And as the time required for the process is shortened, contamination in the device by the vaporized solid source is minimized.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960039041U KR19980026181U (en) | 1996-11-08 | 1996-11-08 | Diffusion Furnace Device of Semiconductor Manufacturing Equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960039041U KR19980026181U (en) | 1996-11-08 | 1996-11-08 | Diffusion Furnace Device of Semiconductor Manufacturing Equipment |
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| Publication Number | Publication Date |
|---|---|
| KR19980026181U true KR19980026181U (en) | 1998-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019960039041U KR19980026181U (en) | 1996-11-08 | 1996-11-08 | Diffusion Furnace Device of Semiconductor Manufacturing Equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100754404B1 (en) * | 2006-05-25 | 2007-08-31 | 삼성전자주식회사 | Diffusion tube, dopant source for process of diffusion, and the method of diffusion using the diffusion tube and the dopant source |
-
1996
- 1996-11-08 KR KR2019960039041U patent/KR19980026181U/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100754404B1 (en) * | 2006-05-25 | 2007-08-31 | 삼성전자주식회사 | Diffusion tube, dopant source for process of diffusion, and the method of diffusion using the diffusion tube and the dopant source |
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