JPH10107018A - Semiconductor wafer heat treatment apparatus - Google Patents
Semiconductor wafer heat treatment apparatusInfo
- Publication number
- JPH10107018A JPH10107018A JP9711097A JP9711097A JPH10107018A JP H10107018 A JPH10107018 A JP H10107018A JP 9711097 A JP9711097 A JP 9711097A JP 9711097 A JP9711097 A JP 9711097A JP H10107018 A JPH10107018 A JP H10107018A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- gas
- wafer
- treatment apparatus
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウェーハの
熱処理装置に関し、特に、ウェーハの大口径化に伴う熱
処理工程の均一化及び品質の改善を実現できる半導体ウ
ェーハの熱処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for a semiconductor wafer, and more particularly to a heat treatment apparatus for a semiconductor wafer capable of realizing uniform heat treatment steps and improving the quality of a large-diameter wafer.
【０００２】[0002]
【従来の技術】一般的に、シリコンを用いて集積回路を
製造する工程において多様な熱処理技術が用いられてい
る。例えば、シリコン基板をＳｉＯ2に酸化させること
によって絶縁層を形成する場合やエッチングマスク及び
トランジスタ用のゲート酸化膜を製造する場合などに用
いられている。2. Description of the Related Art Generally, various heat treatment techniques are used in a process of manufacturing an integrated circuit using silicon. For example, it is used when an insulating layer is formed by oxidizing a silicon substrate to SiO 2 or when an etching mask and a gate oxide film for a transistor are manufactured.
【０００３】また、熱処理技術は、シリコン基板に３価
または５価のイオンを注入した後、注入されたイオンが
シリコン結晶の中で、侵入型（ｉｎｔｅｒｓｔｉｔｉａ
ｌ）から置換型に再配列されて、導電性に寄与すること
ができる余分のホールまたは電子を生成させるための手
段としても用いられている。In the heat treatment technique, trivalent or pentavalent ions are implanted into a silicon substrate, and the implanted ions are interstitial (interstitial) in a silicon crystal.
It is also used as a means to generate extra holes or electrons that can be rearranged from l) to substitutional and contribute to conductivity.
【０００４】さらに、その以外にも熱処理技術は、多様
な方法によって形成された薄膜の熱処理及びＢＰＳＧ膜
のリフローに用いられており、多様な目的のために半導
体デバイスの製造工程に用いられている。このような熱
処理工程に通常用いられている装置は、電気炉である。In addition, other heat treatment techniques are used for heat treatment of thin films formed by various methods and reflow of BPSG films, and are used in semiconductor device manufacturing processes for various purposes. . An apparatus usually used for such a heat treatment step is an electric furnace.
【０００５】しかしながら、最近では、半導体デバイス
がますます高集積化されるに伴って素子の大きさが減少
しているので、製造工程におけるサーマルバジェット
（Ｔｈｅｒｍａｌ Ｂｕｄｇｅｔ）を低減するために、
ＲＴＰ（急速熱処理）装置を用いて熱処理を行う傾向に
なっている。However, recently, as the size of elements has been reduced as semiconductor devices have become more highly integrated, in order to reduce thermal budget in the manufacturing process,
There is a tendency to perform heat treatment using an RTP (rapid heat treatment) apparatus.
【０００６】ＲＴＰ装置は、加熱方式によって二つに分
けられ、その１つはハロゲンランプやアークランプを加
熱源として用いたランプ加熱式の熱処理装置であり、他
の１つは抵抗ヒーターを用いたホットウォール型の熱処
理装置である。[0006] The RTP apparatus is divided into two types according to the heating method. One is a heat treatment apparatus of a lamp heating type using a halogen lamp or an arc lamp as a heating source, and the other is a heating apparatus of a resistance heating type. This is a hot wall type heat treatment apparatus.
【０００７】図２は、市販されているＡＭＡＴ社のラン
プ加熱式の熱処理装置を概略的に示す構造図である。こ
の装置は、工程チャンバー１内のサセプタ２上に置かれ
たウェーハ３の上方に均一に配列された複数のランプ４
と、サセプタ２上にウエーハ３を支持するためのサポー
トリング５とからなり、ガスは工程チャンバー１の一側
から水平方向に注入され、その反対側から排出されるよ
うに構成されている。FIG. 2 is a schematic diagram showing a lamp heating type heat treatment apparatus manufactured by AMAT which is commercially available. The apparatus includes a plurality of lamps 4 uniformly arranged above a wafer 3 placed on a susceptor 2 in a process chamber 1.
And a support ring 5 for supporting the wafer 3 on the susceptor 2. The gas is horizontally injected from one side of the process chamber 1 and discharged from the opposite side.
【０００８】また、図３は、上述のＡＭＡＴ社の装置を
さらに改良したＡＳＴ社の市販のランプ加熱式の装置を
示しており、熱効率を高めるためにウェーハの上方およ
び下方に複数のランプ４がそれぞれ設置されている。FIG. 3 shows a lamp heating type apparatus manufactured by AST, which is an improved version of the above-described apparatus of AMAT, and a plurality of lamps 4 are provided above and below the wafer in order to increase thermal efficiency. Each is installed.
【０００９】このようなランプ加熱式の熱処理装置は、
温度領域を設定して、それぞれのランプ４毎に異なる出
力を加えることによって、均一な温度に維持することが
可能である。[0009] Such a lamp heating type heat treatment apparatus includes:
By setting a temperature range and applying a different output to each of the lamps 4, it is possible to maintain a uniform temperature.
【００１０】しかしながら、ランプ加熱式の熱処理装置
は、ウェーハ３の支持体としてサポートリング５やフィ
ンガーを利用しているので、現在ウェーハが大口径化す
ることによって、ウェーハの支持にサポートリングやフ
ィンガーを使用すると、高温の熱処理による曲げ変形や
ストレス変化が高まるという短所がある。However, since the heat treatment apparatus of the lamp heating type uses the support ring 5 and the finger as the support of the wafer 3, the support ring and the finger are used for supporting the wafer by increasing the diameter of the wafer at present. When used, there is a disadvantage that bending deformation and stress change due to high-temperature heat treatment are increased.
【００１１】図４は、ＭＡＴＴＯＮＳ社の抵抗加熱式の
市販の熱処理装置を示している。この装置は、工程チャ
ンバー１１内においてウエーハ１３を載置するサセプタ
１２と、サセプタ１２の下側に設置された熱抵抗式ヒー
ター１４とからなり、ヒーター１４によりサセプタ１２
を一定温度に加熱し、ガスはウェーハ１３の上方から供
給される。FIG. 4 shows a commercially available heat treatment apparatus of the resistance heating type manufactured by Mattons. This apparatus includes a susceptor 12 on which a wafer 13 is placed in a process chamber 11, and a thermal resistance heater 14 installed below the susceptor 12.
Is heated to a constant temperature, and gas is supplied from above the wafer 13.
【００１２】このような抵抗加熱式の熱処理装置は、工
程チャンバー１１のサイズが大きく、また、ウエーハ１
３を支持するためにサセプタ１２にウェーハ載置溝１２
ａが形成されているので、大口径のウェーハの熱処理の
際に高熱による熱変形がなく、また、ガスがウェーハ１
３の上方から流れるようになっているので、均一な処理
が可能となるという長所を有している。In such a resistance heating type heat treatment apparatus, the size of the process chamber 11 is large, and
3 to support the wafer mounting groove 12 on the susceptor 12.
a is formed, there is no thermal deformation due to high heat during heat treatment of a large-diameter wafer, and gas
3 has an advantage that it can be processed uniformly because it flows from above.
【００１３】しかしながら、抵抗加熱式の熱処理装置
は、工程温度が９００℃以下に限定されており、工程温
度の範囲が狭いので、多様な工程に適用することができ
ず、また、工程チャンバー内部の温度を工程温度まで上
昇させてそれを維持するのに長時間を要するという短所
がある。However, the heat treatment apparatus of the resistance heating type has a process temperature limited to 900 ° C. or lower, and has a narrow process temperature range, so that it cannot be applied to various processes, and the inside of the process chamber cannot be used. The disadvantage is that it takes a long time to raise and maintain the temperature to the process temperature.
【００１４】さらに、従来のランプ加熱式及び抵抗加熱
式の熱処理装置では、ガスが常温または低温の状態で工
程チャンバー内に供給されるので、工程チャンバー内で
急激な温度変化が生じてストレスを誘発するという問題
があった。Furthermore, in the conventional heat treatment apparatus of the lamp heating type and the resistance heating type, gas is supplied into the process chamber at a room temperature or a low temperature, so that a rapid temperature change occurs in the process chamber to induce stress. There was a problem of doing.
【００１５】[0015]
【発明が解決しようとする課題】本発明は、前記のよう
な従来の問題点を解決するためになされたものであっ
て、その目的は、ウェーハの大口径化に適合して、均一
な熱処理工程を実行することが可能な半導体ウェーハの
熱処理装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a uniform heat treatment suitable for increasing the diameter of a wafer. An object of the present invention is to provide a semiconductor wafer heat treatment apparatus capable of performing a process.
【００１６】また、本発明の他の目的は、チャンバー内
の工程温度の範囲を大幅に変更することによって、多様
な工程を実行することが可能な半導体ウェーハの熱処理
装置を提供することにある。It is another object of the present invention to provide a semiconductor wafer heat treatment apparatus capable of performing various processes by greatly changing the process temperature range in a chamber.
【００１７】[0017]
【課題を解決するための手段】上記目的を達成するため
に、本発明による半導体ウェーハの熱処理装置は、密閉
された空間を形成する工程チャンバーと、前記工程チャ
ンバー内に設置されて、熱処理されるウェーハを載置す
るサセプタと、前記サセプタに設けられて、加熱するた
めの熱抵抗ヒーターと、前記ウェーハの上方に設けられ
て、前記工程チャンバー内部を加熱するランプと、前記
工程チャンバーに設けられて、ガスを前記工程チャンバ
ー内に供給するガスインジェクタと、前記ガスインジェ
クタに設けられて、前記工程チャンバー内に供給される
ガスを予熱するガス用ヒーターとを含むことを特徴とす
る。In order to achieve the above object, a semiconductor wafer heat treatment apparatus according to the present invention is provided with a process chamber forming an enclosed space, and is installed in the process chamber and heat-treated. A susceptor for mounting a wafer, a thermal resistance heater provided on the susceptor for heating, a lamp provided above the wafer to heat the inside of the process chamber, and a lamp provided on the process chamber. A gas injector for supplying gas into the process chamber; and a gas heater provided in the gas injector for preheating gas supplied to the process chamber.
【００１８】前記ランプは５００〜１２００℃の範囲の
温度で制御され、前記熱抵抗ヒーターは５００℃以下の
温度で制御されることが好ましい。Preferably, the lamp is controlled at a temperature in the range of 500 to 1200 ° C., and the thermal resistance heater is controlled at a temperature of 500 ° C. or less.
【００１９】前記サセプタの上面には真空吸着溝を形成
してウェーハを真空吸着するようにするとよい。また、
前記サセプタの上面には冷却ガスが供給される冷却溝を
形成してウェーハを冷却するとともに、前記サセプタの
内部には冷却ガスが供給される冷却孔を形成してサセプ
タを冷却するようにするとよい。Preferably, a vacuum suction groove is formed on the upper surface of the susceptor so that the wafer is vacuum-sucked. Also,
A cooling groove for supplying a cooling gas may be formed on the upper surface of the susceptor to cool the wafer, and a cooling hole for supplying a cooling gas may be formed inside the susceptor to cool the susceptor. .
【００２０】前記サセプタにはウェーハをローディング
またはアンローディングさせるリフタが設置されること
が好ましい。Preferably, the susceptor is provided with a lifter for loading or unloading a wafer.
【００２１】前記ガスインジェクタはステンレススチー
ルまたは石英で製造されることが好ましい。また、前記
ガス用ヒーターは５０〜８００℃の範囲の温度で調節さ
れるようにするとよい。Preferably, the gas injector is made of stainless steel or quartz. The gas heater may be controlled at a temperature in the range of 50 to 800C.
【００２２】[0022]
【発明の実施の形態】以下、本発明による好ましい実施
形態を添付の図面を参照しながら詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments according to the present invention will be described below in detail with reference to the accompanying drawings.
【００２３】図１は、本発明による半導体ウェーハの熱
処理装置を概略的に示す構造図である。この装置におい
て、密閉された空間を規定する工程チャンバー２１内部
にサセプタ２２が固定され、このサセプタ２２上にウェ
ーハ２３が載置される。FIG. 1 is a structural view schematically showing a semiconductor wafer heat treatment apparatus according to the present invention. In this apparatus, a susceptor 22 is fixed inside a process chamber 21 that defines a closed space, and a wafer 23 is placed on the susceptor 22.
【００２４】ウェーハ２３の固定は、サセプタ２２の上
面に形成された円形の真空吸着溝２４によって行われ
る。すなわち、真空吸着溝２４はサセプタ２２の下部を
貫通して延びる真空通路２５に連結されており、ウエー
ハ２３は真空通路を２５を通じて真空吸着溝２４に真空
吸着される。The fixing of the wafer 23 is performed by a circular vacuum suction groove 24 formed on the upper surface of the susceptor 22. That is, the vacuum suction groove 24 is connected to a vacuum passage 25 extending through a lower portion of the susceptor 22, and the wafer 23 is vacuum-sucked to the vacuum suction groove 24 through the vacuum passage 25.
【００２５】また、サセプタ２２を垂直方向に貫通して
設置されたピン型のリフタ３５によって、ウェーハ２３
がサセプタ２２上にローディング及びアンローディング
されるようになっている。Further, a pin-type lifter 35 penetrating through the susceptor 22 in the vertical direction is used to
Are loaded and unloaded on the susceptor 22.
【００２６】サセプタ２２及びウェーハ２３の冷却は、
サセプタ２２の上面とサセプタ２２の内部に形成された
冷却溝２６及び冷却孔２７にＮ2、ＨｅまたはＡｒ等の
冷却ガスを供給することによって行われる。冷却溝２６
は、サセプタ２２の下部を貫通して延設された冷却ガス
通路３６に連結され、この冷却ガス通路３６を通じて冷
却ガスが供給される。The cooling of the susceptor 22 and the wafer 23
The cooling is performed by supplying a cooling gas such as N 2 , He, or Ar to the cooling grooves 26 and the cooling holes 27 formed in the upper surface of the susceptor 22 and the inside of the susceptor 22. Cooling groove 26
Is connected to a cooling gas passage 36 extending through the lower portion of the susceptor 22, and the cooling gas is supplied through the cooling gas passage 36.
【００２７】工程チャンバー２１内の熱処理工程温度の
維持は、ウェーハ２３の上方に設置されたハロゲンラン
プ２８と、サセプタ２２に設けられた熱抵抗ヒーター２
９と、サセプタ２２に設けられた温度センサ３０とによ
って行われ、ハロゲンランプ２８と熱抵抗ヒーター２９
の加熱温度の範囲をその特性に合わせて設定して、温度
制御及び工程温度範囲を多様に調節することができるよ
うになっている。The temperature of the heat treatment process in the process chamber 21 is maintained by the halogen lamp 28 provided above the wafer 23 and the heat resistance heater 2 provided in the susceptor 22.
9 and a temperature sensor 30 provided on the susceptor 22, and the halogen lamp 28 and the heat resistance heater 29
The heating temperature range can be set in accordance with the characteristics, and the temperature control and the process temperature range can be variously adjusted.
【００２８】例えば、急速加熱及び急冷が可能なハロゲ
ンランプ２８は、５００〜１２００℃の高温を維持でき
るように設定し、温度上昇率が比較的に低い熱抵抗ヒー
ター２９は、常温から５００℃以下の温度範囲を維持で
きるように設定する。従って、ハロゲンランプ２８と熱
抵抗ヒーター２９の両方を用いるか、または、そのいず
れか１つを用いることによって、多様な工程温度を選択
し設定することができ、ウェーハ２３を熱処理する際の
工程温度の範囲が増大する。For example, the halogen lamp 28 capable of rapid heating and rapid cooling is set so as to be able to maintain a high temperature of 500 to 1200 ° C. Set so that the temperature range of can be maintained. Therefore, various process temperatures can be selected and set by using both the halogen lamp 28 and the thermal resistance heater 29, or by using any one of them, and the process temperature when the wafer 23 is heat-treated can be selected. Range increases.
【００２９】ハロゲンランプ２８はサークルランプ式の
ものを用いることが好ましいが、リニアランプ式または
ライトパイプ式のランプを用いることもできる。なお、
ハロゲンランプ２８の形態によって、工程チャンバー２
１の形態も設計可能である。工程に要するガスの流れ
は、工程チャンバー２１の下部の両側に備えられたガス
流入口３１とガス排出口３２とを通じて行われる。ま
た、工程チャンバー２１の側壁にガスインジェクタ３３
を設けてガスを供給するようにしてもよい。この場合、
ガスインジェクタ３３のガス供給ライン上にガス用ヒー
ター３４を設けて、工程チャンバー２１内にガスを供給
する前に工程温度に応じて５０〜８００℃の範囲内でガ
スを予熱する。The halogen lamp 28 is preferably a circle lamp type, but a linear lamp type or a light pipe type lamp can also be used. In addition,
Depending on the form of the halogen lamp 28, the process chamber 2
The first form can also be designed. The gas flow required for the process is performed through a gas inlet 31 and a gas outlet 32 provided on both sides of a lower portion of the process chamber 21. Further, the gas injector 33 is provided on the side wall of the process chamber 21.
May be provided to supply the gas. in this case,
A gas heater 34 is provided on the gas supply line of the gas injector 33 to preheat the gas within a range of 50 to 800 ° C. depending on the process temperature before supplying the gas into the process chamber 21.
【００３０】ここで、ガスインジェクタ３３は、供給さ
れるガス、例えば窒素系ガス、酸素系ガス及び不活性ガ
スをさらに活性化させるために、ステンレススチールや
石英で製造することが好ましい。Here, the gas injector 33 is preferably made of stainless steel or quartz in order to further activate supplied gases, for example, nitrogen-based gas, oxygen-based gas and inert gas.
【００３１】上記のように構成された半導体ウェーハの
熱処理装置によると、工程チャンバー２１内の工程温度
はウェーハ２３の上方に設けられたハロゲンランプ２８
とサセプタ２２に設けられた熱抵抗ヒーター２９とを制
御することによって維持されるので、工程温度範囲の幅
が広くなり、これによって多様な工程温度範囲における
熱処理工程が可能となる。According to the semiconductor wafer heat treatment apparatus configured as described above, the process temperature in the process chamber 21 is controlled by the halogen lamp 28 provided above the wafer 23.
And the thermal resistance heater 29 provided on the susceptor 22 is controlled, so that the process temperature range is widened, thereby enabling a heat treatment process in various process temperature ranges.
【００３２】すなわち、ハロゲンランプ２８は、その特
性上１２００℃以下の高温を維持するのに適しており、
また、熱抵抗ヒーター２９は、５００℃以下の比較的低
温を維持するのに適しているので、高温で熱処理する場
合にはハロゲンランプ２８を、また、比較的低温で熱処
理する場合には熱抵抗ヒーター２９を選択的に使用する
ことができる。That is, the halogen lamp 28 is suitable for maintaining a high temperature of 1200 ° C. or less due to its characteristics.
Further, since the heat resistance heater 29 is suitable for maintaining a relatively low temperature of 500 ° C. or lower, the halogen lamp 28 is used when heat treatment is performed at a high temperature, and the heat resistance is used when heat treatment is performed at a relatively low temperature. The heater 29 can be selectively used.
【００３３】さらに、ハロゲンランプ２８と熱抵抗ヒー
ター２９とを同時に使用して高温工程を行う場合には、
熱抵抗ヒーター２９を５００℃以下に維持して、工程チ
ャンバー２１内の温度を一定水準に上昇させた状態で、
ハロゲンランプ２８を用いて内部温度を高温に維持する
と、温度変化が大きくならず、また、迅速に高温の工程
温度に上昇でき、より均一な工程温度を維持することが
可能となる。Further, when the high temperature process is performed by using the halogen lamp 28 and the heat resistance heater 29 at the same time,
With the temperature in the process chamber 21 raised to a certain level while maintaining the heat resistance heater 29 at 500 ° C. or less,
If the internal temperature is maintained at a high temperature by using the halogen lamp 28, the temperature change does not increase and the process temperature can be quickly raised to a high process temperature, so that a more uniform process temperature can be maintained.
【００３４】また、熱抵抗ヒーター２９によって予熱さ
れた工程チャンバー２１内にウェーハ２３がローディン
グされ、その後ハロゲンランプ２８を用いて高温で加熱
するようにすると、温度の急激な変化によるウェーハ２
３のストレスが減少する。When the wafer 23 is loaded into the process chamber 21 preheated by the thermal resistance heater 29 and then heated at a high temperature using the halogen lamp 28, the wafer 2
3 stress is reduced.
【００３５】さらに、本発明によれば、サセプタ２２に
設けられたリフタ３５によってウェーハ２３がサセプタ
２２上にローディグ及びアンローディングされ、ウェー
ハ２３は真空通路２５を通じた真空吸着溝２４によって
真空吸着され、同時に冷却ガス通路３６を通じて冷却溝
２６に供給される冷却ガスによって冷却される。Further, according to the present invention, the wafer 23 is loaded and unloaded onto the susceptor 22 by the lifter 35 provided on the susceptor 22, and the wafer 23 is vacuum-adsorbed by the vacuum suction groove 24 through the vacuum passage 25. At the same time, cooling is performed by the cooling gas supplied to the cooling groove 26 through the cooling gas passage 36.
【００３６】従って、高熱によるウェーハ２３の熱変形
が減少し、特に、ウェーハの大口径化に対処して熱変形
を最小化し、サセプタ２２内部に形成された冷却孔２７
に工程時に冷却ガスを供給してウェーハ２３を冷却し、
工程後はサセプタ２２を冷却する。Accordingly, thermal deformation of the wafer 23 due to high heat is reduced. In particular, thermal deformation is minimized in response to an increase in the diameter of the wafer, and the cooling holes 27 formed inside the susceptor 22 are reduced.
Supplying a cooling gas during the process to cool the wafer 23,
After the process, the susceptor 22 is cooled.
【００３７】さらに、本発明によれば、ガスインジェク
タ３３に設けられたガス用ヒーター３４により注入前に
ガスが予熱され、一次的に活性化されたガスが注入され
るので、ガス反応を安定化させて均一な工程を行うこと
ができる。ガスが予熱されて注入されるので、工程チャ
ンバー内における温度変化が減少し、温度変化によるス
トレスの問題も解消する。Furthermore, according to the present invention, the gas is preheated by the gas heater 34 provided in the gas injector 33 before the injection, and the gas which is temporarily activated is injected, so that the gas reaction is stabilized. Thus, a uniform process can be performed. Since the gas is preheated and injected, the temperature change in the process chamber is reduced, and the problem of stress due to the temperature change is also solved.
【００３８】[0038]
【発明の効果】以上のように構成された本発明による半
導体ウェーハの熱処理装置によれば、工程チャンバー内
における工程温度範囲の選択できる幅が広くなって、多
様な熱処理工程を行うことが可能となる。また、高温に
よる熱変形や温度の急激な変化によるストレスが減少
し、安定した工程を行うことができ、特に大口径のウェ
ーハを熱処理する際に工程の均一性及び品質を高めるこ
とができる。According to the heat treatment apparatus for a semiconductor wafer according to the present invention configured as described above, the selectable range of the process temperature range in the process chamber is widened, and various heat treatment processes can be performed. Become. Further, stress due to thermal deformation due to high temperature or a sudden change in temperature is reduced, and a stable process can be performed. In particular, when heat treatment is performed on a large-diameter wafer, uniformity and quality of the process can be improved.
【図１】本発明による熱処理装置を概略的に示す構造図
である。FIG. 1 is a structural view schematically showing a heat treatment apparatus according to the present invention.
【図２】従来のランプ加熱式の熱処理装置を概略的に示
す構造図である。FIG. 2 is a structural view schematically showing a conventional lamp heating type heat treatment apparatus.
【図３】従来の他のランプ加熱式の熱処理装置を概略的
に示す構造図である。FIG. 3 is a structural diagram schematically showing another conventional lamp heating type heat treatment apparatus.
【図４】従来の熱抵抗加熱式の熱処理装置を概略的に示
す構造図である。FIG. 4 is a structural view schematically showing a conventional thermal resistance heating type heat treatment apparatus.
２１ 工程チャンバー ２２ サセプタ ２３ ウェーハ ２８ ランプ ２９ 熱抵抗ヒーター ２４ 真空吸着溝 ２５ 真空通路 ２６ 冷却溝 ２７ 冷却孔 ３０ 温度センサ ３１ ガス流入口 ３２ ガス排出口 ３３ ガスインジェクタ ３４ ガス用ヒーター ３５ リフタ ３６ 冷却ガス通路 DESCRIPTION OF SYMBOLS 21 Process chamber 22 Susceptor 23 Wafer 28 Lamp 29 Thermal resistance heater 24 Vacuum suction groove 25 Vacuum passage 26 Cooling groove 27 Cooling hole 30 Temperature sensor 31 Gas inlet 32 Gas outlet 33 Gas injector 34 Gas heater 35 Lifter 36 Cooling gas passage
Claims (10)
ーと、 前記工程チャンバー内に設置されて、熱処理されるウェ
ーハを載置するサセプタと、 前記サセプタに設けられて、加熱するための熱抵抗ヒー
ターと、 前記ウェーハの上方に設けられて、前記工程チャンバー
内部を加熱するランプと、 前記工程チャンバーに設けられて、ガスを前記工程チャ
ンバー内に供給するガスインジェクタと、 前記ガスインジェクタに設けられて、前記工程チャンバ
ー内に供給されるガスを予熱するガス用ヒーターとを含
むことを特徴とする半導体ウェーハの熱処理装置。A process chamber for forming a closed space; a susceptor installed in the process chamber for mounting a wafer to be heat-treated; and a heat resistance heater provided in the susceptor for heating. A lamp provided above the wafer and heating the inside of the process chamber; a gas injector provided in the process chamber to supply gas into the process chamber; and a gas injector provided in the gas injector; A gas heater for preheating a gas supplied into the process chamber.
の温度で制御され、前記熱抵抗ヒーターは５００℃以下
の温度で制御されることを特徴とする請求項１記載の熱
処理装置。2. The heat treatment apparatus according to claim 1, wherein the lamp is controlled at a temperature in a range of 500 to 1200 ° C., and the heat resistance heater is controlled at a temperature of 500 ° C. or less.
吸着するための真空吸着溝が形成されたことを特徴とす
る請求項１記載の熱処理装置。3. The heat treatment apparatus according to claim 1, wherein a vacuum suction groove for vacuum-sucking the wafer is formed on an upper surface of the susceptor.
するために冷却ガスが供給される冷却溝が形成されたこ
とを特徴とする請求項１記載の熱処理装置。4. The heat treatment apparatus according to claim 1, wherein a cooling groove for supplying a cooling gas for cooling the wafer is formed on an upper surface of the susceptor.
するために冷却ガスが供給される冷却孔が形成されたこ
とを特徴とする請求項１記載の熱処理装置。5. The heat treatment apparatus according to claim 1, wherein a cooling hole for supplying a cooling gas to cool the susceptor is formed inside the susceptor.
の中から選択されたことを特徴とする請求項４または５
記載の熱処理装置。6. The cooling gas is N 2 , He or Ar.
6. A method selected from the group consisting of:
The heat treatment apparatus according to the above.
グまたはアンローディングさせるリフタが設置されたこ
とを特徴とする請求項１記載の熱処理装置。7. The heat treatment apparatus according to claim 1, wherein the susceptor is provided with a lifter for loading or unloading a wafer.
ールで製造されたことを特徴とする請求項１記載の熱処
理装置。8. The heat treatment apparatus according to claim 1, wherein the gas injector is made of stainless steel.
たことを特徴とする請求項１記載の熱処理装置。9. The heat treatment apparatus according to claim 1, wherein the gas injector is made of quartz.
の範囲の温度で調節されることを特徴とする請求項１記
載の熱処理装置。10. The gas heater has a temperature of 50 to 800 ° C.
The heat treatment apparatus according to claim 1, wherein the temperature is adjusted in the range of:
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1996-41741 | 1996-09-23 | ||
| KR1019960041741A KR100203780B1 (en) | 1996-09-23 | 1996-09-23 | Heat treating apparatus for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10107018A true JPH10107018A (en) | 1998-04-24 |
Family
ID=19474925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9711097A Pending JPH10107018A (en) | 1996-09-23 | 1997-04-15 | Semiconductor wafer heat treatment apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH10107018A (en) |
| KR (1) | KR100203780B1 (en) |
| DE (1) | DE19716707A1 (en) |
| GB (1) | GB2317497A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289546A (en) * | 2001-03-27 | 2002-10-04 | Denso Corp | Device and method for producing silicon carbide semiconductor |
| US6626236B1 (en) * | 1999-03-24 | 2003-09-30 | Komatsu Ltd. | Substrate temperature control plate and substrate temperature control apparatus comprising same |
| WO2003107404A1 (en) * | 2002-06-13 | 2003-12-24 | 株式会社日鉱マテリアルズ | Vapor phase epitaxial apparatus and vapor phase epitaxial method |
| WO2003107403A1 (en) * | 2002-06-13 | 2003-12-24 | 株式会社日鉱マテリアルズ | Vapor phase epitaxy device |
| KR100426274B1 (en) * | 2001-08-02 | 2004-04-08 | 피에스케이 주식회사 | Wafer Ashing Apparatus and Method using Lamp Heating |
| CN102082072A (en) * | 2009-11-26 | 2011-06-01 | Tes股份有限公司 | Gas injection device and processing chamber equipped with the gas injection device |
| JP2012204597A (en) * | 2011-03-25 | 2012-10-22 | Core Technology Inc | Multistage heating device |
| JP2019216287A (en) * | 2019-10-01 | 2019-12-19 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment device and heat treatment method |
| KR20200095578A (en) * | 2018-01-26 | 2020-08-10 | 가부시키가이샤 스크린 홀딩스 | Heat treatment method and heat treatment device |
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| CN1308193C (en) * | 2004-12-17 | 2007-04-04 | 上海圣亚照明有限公司第一分公司 | Disposable oxygenating drinking water bottle |
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| US11107708B2 (en) * | 2017-11-14 | 2021-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heating platform, thermal treatment and manufacturing method |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993010556A1 (en) * | 1991-11-22 | 1993-05-27 | Tadahiro Ohmi | Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor |
| JP3234091B2 (en) * | 1994-03-10 | 2001-12-04 | 株式会社日立製作所 | Surface treatment equipment |
-
1996
- 1996-09-23 KR KR1019960041741A patent/KR100203780B1/en not_active IP Right Cessation
-
1997
- 1997-04-15 JP JP9711097A patent/JPH10107018A/en active Pending
- 1997-04-21 DE DE1997116707 patent/DE19716707A1/en not_active Ceased
- 1997-05-19 GB GB9710204A patent/GB2317497A/en not_active Withdrawn
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| JP2002289546A (en) * | 2001-03-27 | 2002-10-04 | Denso Corp | Device and method for producing silicon carbide semiconductor |
| KR100426274B1 (en) * | 2001-08-02 | 2004-04-08 | 피에스케이 주식회사 | Wafer Ashing Apparatus and Method using Lamp Heating |
| US7314519B2 (en) | 2002-06-13 | 2008-01-01 | Nippon Mining & Metals Co., Ltd. | Vapor-phase epitaxial apparatus and vapor phase epitaxial method |
| WO2003107403A1 (en) * | 2002-06-13 | 2003-12-24 | 株式会社日鉱マテリアルズ | Vapor phase epitaxy device |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2317497A (en) | 1998-03-25 |
| KR100203780B1 (en) | 1999-06-15 |
| KR19980022560A (en) | 1998-07-06 |
| DE19716707A1 (en) | 1998-04-02 |
| GB9710204D0 (en) | 1997-07-09 |
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