KR102547214B1 - 스퍼터 장치 - Google Patents

스퍼터 장치 Download PDF

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Publication number
KR102547214B1
KR102547214B1 KR1020180074384A KR20180074384A KR102547214B1 KR 102547214 B1 KR102547214 B1 KR 102547214B1 KR 1020180074384 A KR1020180074384 A KR 1020180074384A KR 20180074384 A KR20180074384 A KR 20180074384A KR 102547214 B1 KR102547214 B1 KR 102547214B1
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KR
South Korea
Prior art keywords
target
substrate
processed
magnet
shielding member
Prior art date
Application number
KR1020180074384A
Other languages
English (en)
Korean (ko)
Other versions
KR20190055710A (ko
Inventor
토시하루 우치다
히로키 스가와라
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Publication of KR20190055710A publication Critical patent/KR20190055710A/ko
Application granted granted Critical
Publication of KR102547214B1 publication Critical patent/KR102547214B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180074384A 2017-11-15 2018-06-27 스퍼터 장치 KR102547214B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017219840A JP6583930B2 (ja) 2017-11-15 2017-11-15 スパッタ装置および有機ｅｌパネルの製造方法
JPJP-P-2017-219840 2017-11-15

Publications (2)

Publication Number Publication Date
KR20190055710A KR20190055710A (ko) 2019-05-23
KR102547214B1 true KR102547214B1 (ko) 2023-06-22

Family

ID=66496278

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180074384A KR102547214B1 (ko) 2017-11-15 2018-06-27 스퍼터 장치

Country Status (3)

Country Link
JP (1) JP6583930B2 (ja)
KR (1) KR102547214B1 (ja)
CN (1) CN109778128B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7473520B2 (ja) 2021-12-20 2024-04-23 キヤノントッキ株式会社 スパッタ装置
JP7495387B2 (ja) 2021-12-20 2024-06-04 キヤノントッキ株式会社 スパッタ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005213587A (ja) 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6455380A (en) * 1987-08-26 1989-03-02 Hitachi Ltd Sputtering device
JP2000096226A (ja) * 1998-09-22 2000-04-04 Kanegafuchi Chem Ind Co Ltd マグネトロンスパッタ装置およびその装置を用いた製膜方法
JP4201066B2 (ja) * 1999-09-10 2008-12-24 パナソニック株式会社 スパッタ方法と装置
EP2017367A1 (en) * 2007-07-18 2009-01-21 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
CN101736301A (zh) * 2008-11-19 2010-06-16 苏州新爱可镀膜设备有限公司 真空磁控镀膜室中的遮挡装置
JP2010174331A (ja) * 2009-01-29 2010-08-12 Canon Inc 硼化物膜の製造方法及び電子放出素子の製造方法
UA101678C2 (uk) * 2011-04-08 2013-04-25 Национальный Научный Центр "Харьковский Физико-Технический Институт" Вакуумно-дуговий випарник для генерування катодної плазми
CN103898462B (zh) * 2012-12-29 2017-08-22 深圳富泰宏精密工业有限公司 磁控溅射镀膜装置
JP2015067856A (ja) * 2013-09-27 2015-04-13 シーゲイト テクノロジー エルエルシー マグネトロンスパッタ装置
JP2015193863A (ja) * 2014-03-31 2015-11-05 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置
JP2016132807A (ja) 2015-01-20 2016-07-25 株式会社アルバック スパッタリング装置、薄膜製造方法
CN106011760B (zh) * 2015-03-26 2018-06-22 株式会社思可林集团 溅镀装置及溅镀方法
JP6600519B2 (ja) * 2015-09-28 2019-10-30 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置およびデータ作成方法
CN106480418B (zh) * 2016-09-27 2019-01-29 信义玻璃(天津)有限公司 清理装置、磁控溅射镀膜机及玻璃镀膜方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005213587A (ja) 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置

Also Published As

Publication number Publication date
CN109778128A (zh) 2019-05-21
JP2019090083A (ja) 2019-06-13
KR20190055710A (ko) 2019-05-23
CN109778128B (zh) 2022-08-23
JP6583930B2 (ja) 2019-10-02

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