KR102506098B1 - 웨이퍼 결정 배향을 추정하는 방법 및 시스템 - Google Patents
웨이퍼 결정 배향을 추정하는 방법 및 시스템 Download PDFInfo
- Publication number
- KR102506098B1 KR102506098B1 KR1020200104126A KR20200104126A KR102506098B1 KR 102506098 B1 KR102506098 B1 KR 102506098B1 KR 1020200104126 A KR1020200104126 A KR 1020200104126A KR 20200104126 A KR20200104126 A KR 20200104126A KR 102506098 B1 KR102506098 B1 KR 102506098B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- ion beam
- zone
- crystal orientation
- angle
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 179
- 239000013078 crystal Substances 0.000 claims abstract description 135
- 230000004044 response Effects 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 296
- 238000005468 ion implantation Methods 0.000 claims description 19
- 238000002513 implantation Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 description 93
- 238000012360 testing method Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007943 implant Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Automation & Control Theory (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962898828P | 2019-09-11 | 2019-09-11 | |
US62/898,828 | 2019-09-11 | ||
US16/842,673 US11282707B2 (en) | 2019-09-11 | 2020-04-07 | Method and system of estimating wafer crystalline orientation |
US16/842,673 | 2020-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20210031607A KR20210031607A (ko) | 2021-03-22 |
KR102506098B1 true KR102506098B1 (ko) | 2023-03-06 |
Family
ID=74850216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020200104126A KR102506098B1 (ko) | 2019-09-11 | 2020-08-19 | 웨이퍼 결정 배향을 추정하는 방법 및 시스템 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102506098B1 (zh) |
CN (1) | CN112485290B (zh) |
TW (1) | TWI769522B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011502788A (ja) | 2007-11-05 | 2011-01-27 | ウルトラテック インク | 表面反射率の変化の最小化 |
US20190094711A1 (en) | 2017-09-27 | 2019-03-28 | Kla-Tencor Corporation | Detection And Measurement Of Dimensions Of Asymmetric Structures |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH056665U (ja) * | 1991-07-02 | 1993-01-29 | 日新電機株式会社 | イオン注入装置 |
US5185273A (en) * | 1991-09-30 | 1993-02-09 | Motorola, Inc. | Method for measuring ions implanted into a semiconductor substrate |
JPH09260301A (ja) * | 1996-03-26 | 1997-10-03 | Sony Corp | イオン注入方法 |
JP2850839B2 (ja) * | 1996-03-26 | 1999-01-27 | 日本電気株式会社 | 結晶の面方位測定方法および結晶の面方位測定装置 |
US6432729B1 (en) * | 1999-09-29 | 2002-08-13 | Lam Research Corporation | Method for characterization of microelectronic feature quality |
US6555832B1 (en) * | 1999-10-13 | 2003-04-29 | Applied Materials, Inc. | Determining beam alignment in ion implantation using Rutherford Back Scattering |
KR100407579B1 (ko) * | 2001-11-22 | 2003-11-28 | 삼성전자주식회사 | 이온 주입 시스템의 웨이퍼 홀딩 장치 |
US6911660B2 (en) * | 2002-10-02 | 2005-06-28 | Varian Semiconductor Equipment Associates, Inc. | Method of measuring ion beam angles |
US6940079B2 (en) * | 2004-01-22 | 2005-09-06 | Axcelis Technologies, Inc. | Method of correction for wafer crystal cut error in semiconductor processing |
US6870170B1 (en) * | 2004-03-04 | 2005-03-22 | Applied Materials, Inc. | Ion implant dose control |
KR100600356B1 (ko) * | 2004-12-29 | 2006-07-18 | 동부일렉트로닉스 주식회사 | 이온 주입 장비의 각 제로 위치 보정방법 |
JP4494992B2 (ja) * | 2005-01-25 | 2010-06-30 | パナソニック株式会社 | 半導体装置の製造方法及びそれを用いたイオン注入装置 |
US7329882B2 (en) * | 2005-11-29 | 2008-02-12 | Axcelis Technologies, Inc. | Ion implantation beam angle calibration |
US7561983B2 (en) * | 2006-09-29 | 2009-07-14 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implantation based on ion beam angle-related information |
US8586459B2 (en) * | 2006-11-06 | 2013-11-19 | Semequip, Inc. | Ion implantation with molecular ions containing phosphorus and arsenic |
JP2013089409A (ja) * | 2011-10-17 | 2013-05-13 | Sen Corp | イオン注入装置及びイオン注入方法 |
JP2014022347A (ja) * | 2012-07-24 | 2014-02-03 | Sen Corp | イオン注入方法およびイオン注入装置 |
KR101360906B1 (ko) * | 2012-11-16 | 2014-02-11 | 한국표준과학연구원 | 고분해능 x-선 로킹 커브 측정을 이용한 단결정 웨이퍼의 면방위 측정 방법 |
JP6045445B2 (ja) * | 2013-06-14 | 2016-12-14 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置 |
US9293331B2 (en) * | 2013-08-29 | 2016-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for monitoring ion beam in ion implanter system |
CN106463347B (zh) * | 2014-06-13 | 2020-09-15 | 英特尔公司 | 即时电子束对准 |
CN105261582B (zh) * | 2014-07-03 | 2018-03-27 | 中芯国际集成电路制造(上海)有限公司 | 一种晶片角度校准方法 |
CN106298477B (zh) * | 2015-06-02 | 2019-03-22 | 中芯国际集成电路制造(上海)有限公司 | 离子注入角的监测方法 |
JP6588323B2 (ja) * | 2015-12-10 | 2019-10-09 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
JP6644596B2 (ja) * | 2016-03-18 | 2020-02-12 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
-
2020
- 2020-08-19 KR KR1020200104126A patent/KR102506098B1/ko active IP Right Grant
- 2020-09-08 TW TW109130791A patent/TWI769522B/zh active
- 2020-09-11 CN CN202010954376.1A patent/CN112485290B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011502788A (ja) | 2007-11-05 | 2011-01-27 | ウルトラテック インク | 表面反射率の変化の最小化 |
US20190094711A1 (en) | 2017-09-27 | 2019-03-28 | Kla-Tencor Corporation | Detection And Measurement Of Dimensions Of Asymmetric Structures |
Also Published As
Publication number | Publication date |
---|---|
TW202111756A (zh) | 2021-03-16 |
TWI769522B (zh) | 2022-07-01 |
CN112485290B (zh) | 2024-07-30 |
KR20210031607A (ko) | 2021-03-22 |
CN112485290A (zh) | 2021-03-12 |
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