KR102506098B1 - 웨이퍼 결정 배향을 추정하는 방법 및 시스템 - Google Patents

웨이퍼 결정 배향을 추정하는 방법 및 시스템 Download PDF

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Publication number
KR102506098B1
KR102506098B1 KR1020200104126A KR20200104126A KR102506098B1 KR 102506098 B1 KR102506098 B1 KR 102506098B1 KR 1020200104126 A KR1020200104126 A KR 1020200104126A KR 20200104126 A KR20200104126 A KR 20200104126A KR 102506098 B1 KR102506098 B1 KR 102506098B1
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KR
South Korea
Prior art keywords
wafer
ion beam
zone
crystal orientation
angle
Prior art date
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KR1020200104126A
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English (en)
Korean (ko)
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KR20210031607A (ko
Inventor
보-충 차이
Original Assignee
타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
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Priority claimed from US16/842,673 external-priority patent/US11282707B2/en
Application filed by 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 filed Critical 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
Publication of KR20210031607A publication Critical patent/KR20210031607A/ko
Application granted granted Critical
Publication of KR102506098B1 publication Critical patent/KR102506098B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020200104126A 2019-09-11 2020-08-19 웨이퍼 결정 배향을 추정하는 방법 및 시스템 KR102506098B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962898828P 2019-09-11 2019-09-11
US62/898,828 2019-09-11
US16/842,673 US11282707B2 (en) 2019-09-11 2020-04-07 Method and system of estimating wafer crystalline orientation
US16/842,673 2020-04-07

Publications (2)

Publication Number Publication Date
KR20210031607A KR20210031607A (ko) 2021-03-22
KR102506098B1 true KR102506098B1 (ko) 2023-03-06

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KR1020200104126A KR102506098B1 (ko) 2019-09-11 2020-08-19 웨이퍼 결정 배향을 추정하는 방법 및 시스템

Country Status (3)

Country Link
KR (1) KR102506098B1 (zh)
CN (1) CN112485290B (zh)
TW (1) TWI769522B (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011502788A (ja) 2007-11-05 2011-01-27 ウルトラテック インク 表面反射率の変化の最小化
US20190094711A1 (en) 2017-09-27 2019-03-28 Kla-Tencor Corporation Detection And Measurement Of Dimensions Of Asymmetric Structures

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US5185273A (en) * 1991-09-30 1993-02-09 Motorola, Inc. Method for measuring ions implanted into a semiconductor substrate
JPH09260301A (ja) * 1996-03-26 1997-10-03 Sony Corp イオン注入方法
JP2850839B2 (ja) * 1996-03-26 1999-01-27 日本電気株式会社 結晶の面方位測定方法および結晶の面方位測定装置
US6432729B1 (en) * 1999-09-29 2002-08-13 Lam Research Corporation Method for characterization of microelectronic feature quality
US6555832B1 (en) * 1999-10-13 2003-04-29 Applied Materials, Inc. Determining beam alignment in ion implantation using Rutherford Back Scattering
KR100407579B1 (ko) * 2001-11-22 2003-11-28 삼성전자주식회사 이온 주입 시스템의 웨이퍼 홀딩 장치
US6911660B2 (en) * 2002-10-02 2005-06-28 Varian Semiconductor Equipment Associates, Inc. Method of measuring ion beam angles
US6940079B2 (en) * 2004-01-22 2005-09-06 Axcelis Technologies, Inc. Method of correction for wafer crystal cut error in semiconductor processing
US6870170B1 (en) * 2004-03-04 2005-03-22 Applied Materials, Inc. Ion implant dose control
KR100600356B1 (ko) * 2004-12-29 2006-07-18 동부일렉트로닉스 주식회사 이온 주입 장비의 각 제로 위치 보정방법
JP4494992B2 (ja) * 2005-01-25 2010-06-30 パナソニック株式会社 半導体装置の製造方法及びそれを用いたイオン注入装置
US7329882B2 (en) * 2005-11-29 2008-02-12 Axcelis Technologies, Inc. Ion implantation beam angle calibration
US7561983B2 (en) * 2006-09-29 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation based on ion beam angle-related information
US8586459B2 (en) * 2006-11-06 2013-11-19 Semequip, Inc. Ion implantation with molecular ions containing phosphorus and arsenic
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
JP2014022347A (ja) * 2012-07-24 2014-02-03 Sen Corp イオン注入方法およびイオン注入装置
KR101360906B1 (ko) * 2012-11-16 2014-02-11 한국표준과학연구원 고분해능 x-선 로킹 커브 측정을 이용한 단결정 웨이퍼의 면방위 측정 방법
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JP6588323B2 (ja) * 2015-12-10 2019-10-09 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
JP6644596B2 (ja) * 2016-03-18 2020-02-12 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011502788A (ja) 2007-11-05 2011-01-27 ウルトラテック インク 表面反射率の変化の最小化
US20190094711A1 (en) 2017-09-27 2019-03-28 Kla-Tencor Corporation Detection And Measurement Of Dimensions Of Asymmetric Structures

Also Published As

Publication number Publication date
TW202111756A (zh) 2021-03-16
TWI769522B (zh) 2022-07-01
CN112485290B (zh) 2024-07-30
KR20210031607A (ko) 2021-03-22
CN112485290A (zh) 2021-03-12

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