KR102247029B9 - c축 배향된 결정성 산화물 반도체막을 구비하는 수직형 비휘발성 메모리 소자 - Google Patents

c축 배향된 결정성 산화물 반도체막을 구비하는 수직형 비휘발성 메모리 소자

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Publication number
KR102247029B9
KR102247029B9 KR20190083469A KR20190083469A KR102247029B9 KR 102247029 B9 KR102247029 B9 KR 102247029B9 KR 20190083469 A KR20190083469 A KR 20190083469A KR 20190083469 A KR20190083469 A KR 20190083469A KR 102247029 B9 KR102247029 B9 KR 102247029B9
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KR
South Korea
Prior art keywords
semiconductor layer
memory device
oxide semiconductor
volatile memory
device including
Prior art date
Application number
KR20190083469A
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English (en)
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KR102247029B1 (ko
KR20200008512A (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of KR20200008512A publication Critical patent/KR20200008512A/ko
Application granted granted Critical
Publication of KR102247029B1 publication Critical patent/KR102247029B1/ko
Publication of KR102247029B9 publication Critical patent/KR102247029B9/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
KR1020190083469A 2018-07-16 2019-07-10 c축 배향된 결정성 산화물 반도체막을 구비하는 수직형 비휘발성 메모리 소자 KR102247029B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180082261 2018-07-16
KR20180082261 2018-07-16

Publications (3)

Publication Number Publication Date
KR20200008512A KR20200008512A (ko) 2020-01-28
KR102247029B1 KR102247029B1 (ko) 2021-04-30
KR102247029B9 true KR102247029B9 (ko) 2021-09-17

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KR1020190083469A KR102247029B1 (ko) 2018-07-16 2019-07-10 c축 배향된 결정성 산화물 반도체막을 구비하는 수직형 비휘발성 메모리 소자

Country Status (1)

Country Link
KR (1) KR102247029B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102321729B1 (ko) * 2020-04-16 2021-11-05 주식회사 한솔케미칼 반도체층 및 그 제조방법, 그리고 이를 포함하는 트랜지스터.
EP4386862A1 (en) * 2022-12-15 2024-06-19 Imec VZW Ferroelectric field-effect transistor memory structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102254731B1 (ko) * 2012-04-13 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102170770B1 (ko) * 2014-03-03 2020-10-28 삼성전자주식회사 반도체 장치
KR20160060850A (ko) * 2014-11-20 2016-05-31 삼성전자주식회사 메모리 장치 및 그 형성방법
US9954112B2 (en) * 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW202416542A (zh) * 2015-03-30 2024-04-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102609348B1 (ko) * 2016-10-26 2023-12-06 삼성전자주식회사 반도체 장치 및 그 제조 방법

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Publication number Publication date
KR102247029B1 (ko) 2021-04-30
KR20200008512A (ko) 2020-01-28

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