KR102095597B1 - 실리콘 단결정의 제조 방법 - Google Patents

실리콘 단결정의 제조 방법 Download PDF

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Publication number
KR102095597B1
KR102095597B1 KR1020187024238A KR20187024238A KR102095597B1 KR 102095597 B1 KR102095597 B1 KR 102095597B1 KR 1020187024238 A KR1020187024238 A KR 1020187024238A KR 20187024238 A KR20187024238 A KR 20187024238A KR 102095597 B1 KR102095597 B1 KR 102095597B1
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KR
South Korea
Prior art keywords
single crystal
tail portion
silicon single
silicon
melt
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KR1020187024238A
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English (en)
Korean (ko)
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KR20180101586A (ko
Inventor
미츠아키 하야시
와타루 스기무라
토시아키 오노
토시유키 후지와라
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가부시키가이샤 사무코
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Publication of KR20180101586A publication Critical patent/KR20180101586A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020187024238A 2016-03-14 2017-01-18 실리콘 단결정의 제조 방법 KR102095597B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-049164 2016-03-14
JP2016049164A JP6202119B2 (ja) 2016-03-14 2016-03-14 シリコン単結晶の製造方法
PCT/JP2017/001493 WO2017159028A1 (ja) 2016-03-14 2017-01-18 シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
KR20180101586A KR20180101586A (ko) 2018-09-12
KR102095597B1 true KR102095597B1 (ko) 2020-03-31

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KR1020187024238A KR102095597B1 (ko) 2016-03-14 2017-01-18 실리콘 단결정의 제조 방법

Country Status (6)

Country Link
JP (1) JP6202119B2 (de)
KR (1) KR102095597B1 (de)
CN (1) CN108779577B (de)
DE (1) DE112017001292B4 (de)
TW (1) TWI632257B (de)
WO (1) WO2017159028A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置
JP7006573B2 (ja) * 2018-11-30 2022-01-24 株式会社Sumco 単結晶引き上げ装置、および、シリコン単結晶の製造方法
TWI698557B (zh) * 2018-12-28 2020-07-11 環球晶圓股份有限公司 矽單晶長晶方法及矽單晶長晶設備
KR102147459B1 (ko) * 2019-01-08 2020-08-24 에스케이실트론 주식회사 단결정 잉곳 성장 장치 및 단결정 잉곳 성장 방법
JP6777908B1 (ja) * 2019-11-19 2020-10-28 Ｆｔｂ研究所株式会社 単結晶成長装置、該単結晶成長装置の使用方法および単結晶成長方法
CN115369482A (zh) * 2021-05-21 2022-11-22 内蒙古中环协鑫光伏材料有限公司 一种适用于吸料实验的极限拉晶工艺
CN114752995A (zh) * 2022-05-31 2022-07-15 西安奕斯伟材料科技有限公司 一种用于拉晶炉的热场控制装置及拉晶炉

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008150283A (ja) 2007-12-14 2008-07-03 Sumco Corp エピタキシャルウェーハの製造方法
JP2009256156A (ja) * 2008-04-21 2009-11-05 Sumco Corp シリコン単結晶の育成方法
KR101467103B1 (ko) 2013-06-21 2014-11-28 주식회사 엘지실트론 실리콘 단결정 성장 장치 및 그 성장 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1045493A (ja) * 1996-07-30 1998-02-17 Sumitomo Sitix Corp 単結晶の製造方法
CN1178844A (zh) * 1996-08-08 1998-04-15 Memc电子材料有限公司 切克劳斯基法生长硅的温度和时间关系的控制方法
US5779791A (en) 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
JPH10194890A (ja) * 1996-12-27 1998-07-28 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP4806974B2 (ja) * 2005-06-20 2011-11-02 株式会社Ｓｕｍｃｏ シリコン単結晶育成方法
JP5151777B2 (ja) 2008-07-30 2013-02-27 株式会社Ｓｕｍｃｏ シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP5375636B2 (ja) 2010-01-29 2013-12-25 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
CN104313682A (zh) * 2014-11-17 2015-01-28 天津市环欧半导体材料技术有限公司 一种快速提高直拉硅单晶生长速度的热场结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008150283A (ja) 2007-12-14 2008-07-03 Sumco Corp エピタキシャルウェーハの製造方法
JP2009256156A (ja) * 2008-04-21 2009-11-05 Sumco Corp シリコン単結晶の育成方法
KR101467103B1 (ko) 2013-06-21 2014-11-28 주식회사 엘지실트론 실리콘 단결정 성장 장치 및 그 성장 방법

Also Published As

Publication number Publication date
CN108779577B (zh) 2021-01-01
DE112017001292B4 (de) 2023-03-16
WO2017159028A1 (ja) 2017-09-21
TWI632257B (zh) 2018-08-11
DE112017001292T5 (de) 2018-12-06
JP6202119B2 (ja) 2017-09-27
TW201800625A (zh) 2018-01-01
KR20180101586A (ko) 2018-09-12
CN108779577A (zh) 2018-11-09
JP2017165593A (ja) 2017-09-21

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