KR102050496B1 - A method for cleaning chamber processing semiconductor material - Google Patents
A method for cleaning chamber processing semiconductor material Download PDFInfo
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- KR102050496B1 KR102050496B1 KR1020130018677A KR20130018677A KR102050496B1 KR 102050496 B1 KR102050496 B1 KR 102050496B1 KR 1020130018677 A KR1020130018677 A KR 1020130018677A KR 20130018677 A KR20130018677 A KR 20130018677A KR 102050496 B1 KR102050496 B1 KR 102050496B1
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- cleaning
- processing chamber
- gas
- semiconductor processing
- cleaning gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a method for cleaning a semiconductor processing chamber that improves the cleaning performance of the semiconductor processing chamber. Specifically, the present invention provides a method of cleaning a semiconductor processing chamber in which a deposition process for forming a SiOxC layer in a semiconductor structure is performed, wherein the semiconductor structure is unloaded in the semiconductor processing chamber and residual gas used in the deposition process is removed. Cleaning preparation step of exhausting; A first cleaning step of removing a first by-product of SiO x C series formed on an inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-product of the SiOx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a semiconductor processing chamber, and more particularly, to a method of cleaning a semiconductor processing chamber in which the cleaning performance of the semiconductor processing chamber is improved.
In manufacturing a semiconductor device or a semiconductor module, a process of depositing various reaction gases on a substrate and etching the deposited layers is essentially performed in a chamber.
When a predetermined number of deposition processes or etching processes are repeated in one chamber, by-products generated by the deposition process or the etching process are formed in the chamber or the inner wall of the chamber. When the by-products are formed to have a predetermined size or thickness or more, the by-products are separated from the inner wall of the chamber in the subsequent deposition process or etching process and are then deposited on the semiconductor device or the semiconductor module to be manufactured. The by-products cause a failure of the semiconductor device or the semiconductor module.
In particular, in the encapsulation process of encapsulating a semiconductor device or a semiconductor module that has been completed, a thin film of SiOxC is used, and SiOxC is a byproduct on the inner wall of a processing chamber in which a deposition process for depositing such SiOxC layer is performed. Is formed.
The cleaning method of the semiconductor processing chamber according to the prior art has used NF 3 gas as the cleaning gas to clean the chamber.
However, when using a cleaning gas composed of NF 3 gas, as in the prior art, not only the C component of SiO x C cannot be removed, but also a by-product in the chamber is not completely removed, thereby causing a problem of low cleaning performance.
Accordingly, it is an object of the present invention to provide a method of cleaning a semiconductor processing chamber that solves the problems of the prior art.
In particular, it is an object of the present invention to provide a method for cleaning a semiconductor processing chamber that significantly improves cleaning performance.
To this end, according to an embodiment of the present invention, a method of cleaning a semiconductor processing chamber in which a deposition process for forming an inorganic layer containing carbon in a semiconductor structure is performed, the method of unloading the semiconductor structure in the semiconductor processing chamber And a cleaning preparation step of exhausting residual gas used in the deposition process. A first cleaning step of removing the first by-product of the inorganic substance containing carbon formed on the inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-product of the SiOx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.
Also, preferably, the carbon-containing inorganic material is composed of SiO x C.
Also, preferably, the deposition process for forming the SiOxC layer is performed using a hexamethyldisiloxane (HMDSO) source.
Also, preferably, the first cleaning step may include a first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber; A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber; A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step.
Preferably, the first cleaning gas is an NF 3 gas, and the second cleaning gas is an O 2 gas.
In addition, the flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the semiconductor processing chamber in the first cleaning step may be 5: 1 to 10: 1.
Also, preferably, the predetermined first temperature is 80 ° C to 200 ° C.
Also, preferably, the second cleaning step may include: a third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature.
Further, preferably, the third cleaning gas is the same gas as the first cleaning gas.
Also, preferably, the third cleaning gas is an NF 3 gas.
Also, preferably, the predetermined second temperature is 80 ° C to 200 ° C.
Further, preferably, the ratio of the execution time of the second cleaning step to the execution time of the first cleaning step is 2: 1.
According to another embodiment of the present invention, the present invention provides a method for cleaning a semiconductor processing chamber in which a first deposition process for forming a SiOxC layer and a second deposition process for forming a SiNx layer are alternately performed. A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process; A first cleaning step of removing a first by-product of SiO x C series formed on an inner wall of the semiconductor processing chamber; And a second cleaning step of removing the second by-products of the SiOx series and the third by-products of the SiNx series formed on the inner wall of the semiconductor processing chamber in the first cleaning step.
Also, preferably, the first cleaning step may include a first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber; A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber; A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step, wherein the second cleaning step comprises: a third injecting a third fluorine-based cleaning gas into the semiconductor processing chamber; Injection step; And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature.
Preferably, the first cleaning gas and the third cleaning gas are NF 3 gas, and the second cleaning gas is O 2 gas.
According to the above-described problem solving means, the present invention can completely remove the by-product formed during the SiOxC deposition process in the processing chamber in which the SiOxC deposition process is performed.
In addition, the present invention can significantly improve the cleaning performance of the processing chamber in which the SiO x C deposition process is performed. Because of this, the present invention can prevent the contamination of the product by the by-products in the semiconductor processing chamber can significantly reduce the defective rate of the product.
1 is a schematic diagram of a semiconductor processing chamber in accordance with the present invention.
2 is a schematic flowchart of a method of cleaning a semiconductor processing chamber in accordance with an embodiment of the present invention.
3 is a schematic flowchart of a first cleaning step according to an embodiment of the present invention.
4 is a schematic flowchart of a second cleaning step according to an embodiment of the present invention.
5A and 5B show the state of the chamber inside the execution of the cleaning method of the semiconductor processing chamber according to the prior art.
6A-6C show the chamber internal state upon execution of a method of cleaning a semiconductor processing chamber in accordance with the present invention.
7 is a schematic flowchart of a method of cleaning a semiconductor processing chamber in accordance with another embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. In the accompanying drawings, it should be noted that the same reference numerals are used in the drawings to designate the same configuration in other drawings as much as possible. In addition, in describing the present invention, when it is determined that a detailed description of a related known function or known configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. And certain features shown in the drawings are enlarged or reduced or simplified for ease of description, the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.
1 is a schematic diagram of a
As shown in FIG. 1, the
The
Here, the semiconductor structure is a semiconductor package before the airtight encapsulation process is performed, and the semiconductor package is, for example, a liquid crystal display (LCD), a light emitting diode (LED), an organic light emitting diode (OLED), or a solar cell. It may be a semiconductor package constituting a part of the cell).
The
The reaction
The two cleaning gas supply units include a first cleaning
The first cleaning
The
Hereinafter, the cleaning method of the
2 is a schematic flowchart of a cleaning method of the
As shown in FIGS. 2 to 4, the cleaning method (S2000) of the
Herein, the inorganic layer containing carbon is a SiOxC layer composed of SiOxC. The deposition process for forming the SiOxC layer is preferably carried out using a hexamethyldisiloxane (HMDSO) source. That is, in order to encapsulate the semiconductor structure into a SiO x C layer, HMDSO is used as the source of SiO x C.
In the cleaning preparation step S2100, the semiconductor structure is unloaded in the
This cleaning preparation step (S2100) is not executed every time the deposition process of the SiO x C layer is executed after the execution of the predetermined number of deposition processes is completed. That is, the cleaning preparation step is not performed before every deposition process but at regular intervals. The predetermined number of times is determined based on the thickness of the SiOxC formed on the inner wall of the
The first by-product of an inorganic substance-containing (eg, SiOxC-based) containing carbon is formed on the inner wall of the
Specifically, as shown in FIG. 3, the first cleaning step (S2200) may include a first injection step (S2210) of injecting a fluorine-based first cleaning gas into the
In this case, the first injection step (S2210) and the second injection step (S2230) may be executed simultaneously or sequentially through the first cleaning
Here, the first cleaning gas is a fluorine series gas. For example, the first cleaning gas is CF 4 Gas, C 2 F 4 Gas, C 2 F 6 It may be one of the gases.
The second cleaning gas is an oxygen-based gas. For example, the second cleaning gas is O 2 gas or O 3 It may be a gas. The second cleaning gas, which is the oxygen-based gas, is formed as a COx gas by chemically combining the C component by separating the C component from the first by-product of SiOxC formed on the inner wall of the
The flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the
Also, preferably, the predetermined first temperature in the first heating step S2250 may be 80 ° C to 200 ° C. That is, in the first heating step, the temperature inside the
After the end of the first heating step, the
When the above-described first cleaning step S2200 is completed, a second byproduct of SiOx series may be formed inside the
Specifically, as shown in FIG. 4, in the second cleaning step S2300, after the first cleaning step S2200 is finished, a third fluorine-based third cleaning gas is injected into the
Here, the third cleaning gas is a fluorine-based gas, and the third cleaning gas is supplied into the
For example, the third cleaning gas is CF 4 Gas, C 2 F 4 Gas, C 2 F 6 It may be one of the gases.
The third cleaning gas is a gas for decomposing (or gasifying) a second by-product composed of SiOx formed in the
Also, preferably, the predetermined second temperature may be 80 ° C. to 200 ° C. in the second heating step S2330. That is, the second heating step (S2330) operates the
Preferably, the ratio of the execution time of the second cleaning step S2300 to the execution time of the first cleaning step S2200 may be 2: 1. For example, in the method S2000 of cleaning the
5A and 5B show the internal state of the chamber during the execution of the cleaning method of the semiconductor processing chamber according to the prior art, and FIGS. 6A to 6C show the internal state of the chamber during the execution of the cleaning method of the semiconductor processing chamber according to the present invention. have. Specifically, FIG. 6A illustrates an internal state of the chamber when the first cleaning step S2200 of the method of cleaning the semiconductor processing chamber according to the present invention is performed, and FIGS. 6B and 6C illustrate a method of cleaning the semiconductor processing chamber according to the present invention. The internal state of the chamber when the second cleaning step S2300 is executed is shown.
The cleaning method of the
According to the cleaning method (S2000) of the
Referring to FIG. 6A and the chemical formula, after completion of the first cleaning step S2200, second by-products composed of SiOx remain on the inner wall of the
In this case, when the second cleaning step (S2300) is executed, the second by-product formed on the inner wall of the
Referring to FIGS. 6B and 6C and the above chemical formula, since the second by-product is decomposed into SiF 4 gas and NO x gas and discharged to the
As described above, the present invention can completely remove the by-products formed during the SiOxC deposition process in the
In addition, the present invention can significantly improve the cleaning performance of the
7 is a schematic flowchart of a cleaning method S3000 of a
The cleaning method (S3000) of the
As illustrated in FIG. 7, the cleaning method S3000 of the
In addition, the cleaning method (S3000) of the
That is, in the second cleaning step S3300, the processing chamber in the deposition process (ie, the second deposition process) of the SiON-based residue and the SiNx layer which are the second by-products formed by the first cleaning step using the second cleaning gas. Simultaneously removing the third by-product of the SiNx series formed on the inner wall of (1000).
In detail, the first cleaning step S3200 may include a first injection step of injecting a fluorine-based first cleaning gas into the
The second cleaning step S3300 may include a third injection step of injecting a fluorine-based third cleaning gas into the
At this time, most preferably, the first cleaning gas and the third cleaning gas may be an NF 3 gas, and the second cleaning gas may be an O 2 gas.
As described above, the present invention can completely remove by-products formed during the SiOxC deposition process and by-products formed during the SiNx deposition process in the processing chamber in which the SiOxC deposition process and the SiNx deposition process are alternately performed.
In addition, the present invention can significantly improve the cleaning performance of the processing chamber in which the SiO x C deposition process and the SiN x deposition process are performed. Because of this, the present invention can prevent the contamination of the product by the by-products in the semiconductor processing chamber can significantly reduce the defective rate of the product.
Although illustrated and described in the specific embodiments to illustrate the technical spirit of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiment as described above, within the limits that various modifications do not depart from the scope of the invention It can be carried out in. Therefore, such modifications should also be regarded as belonging to the scope of the present invention, and the scope of the present invention should be determined by the claims below.
1000: Semiconductor Processing Chamber
100: reaction space
200: susceptor
300: heating unit
400: reaction gas supply unit
510: first cleaning gas supply unit
511: first cleaning gas supply pipe
513: first cleaning gas storage unit
530: second cleaning gas supply unit
531: second cleaning gas supply pipe
533: second cleaning gas storage unit
600: exhaust
601 exhaust pipe
603: exhaust pump
605: discharge tube
S2000: Cleaning method of a semiconductor processing chamber according to an embodiment
S3000: Cleaning method of a semiconductor processing chamber according to another embodiment
Claims (15)
A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process;
A first cleaning step of decomposing the first by-product of the SiO x C series formed in the deposition process into a residual gas and a second by-product of the SiO x based; And
And a second cleaning step of removing the second by-product of the SiOx series decomposed in the first cleaning step.
The first cleaning step,
Using the first cleaning gas of fluorine series and the second cleaning gas of oxygen series,
And the second cleaning step is performed after the residual gas decomposed in the first cleaning step is discharged to the outside of the semiconductor processing chamber.
And the carbon-containing inorganic material is composed of SiO x C.
The first cleaning step,
A first injection step of injecting the first cleaning gas into the semiconductor processing chamber;
A second injection step of injecting the second cleaning gas into the semiconductor processing chamber;
A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And
And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step.
And a flow rate ratio of the second cleaning gas to the first cleaning gas supplied into the semiconductor processing chamber in the first cleaning step is 5: 1 to 10: 1.
The predetermined first temperature is a cleaning method of a semiconductor processing chamber, characterized in that 80 ℃ to 200 ℃.
The second cleaning step,
A third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And
And a second heating step of raising the temperature inside the semiconductor processing chamber into which the third cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature. Way.
And the third cleaning gas is the same gas as the first cleaning gas.
The predetermined second temperature is a method for cleaning a semiconductor processing chamber, characterized in that 80 ℃ to 200 ℃.
And a ratio of the execution time of the second cleaning step to the execution time of the first cleaning step is 2: 1.
A cleaning preparation step of unloading the semiconductor structure in the semiconductor processing chamber and exhausting residual gas used in the deposition process;
A first cleaning step of decomposing the SiOxC-based first by-product formed in the first deposition process into a residual gas and a second by-product of SiOx-based;
And a second cleaning step of removing the second by-products of the SiOx series and the third by-products of the SiNx series formed in the second deposition process.
And the second cleaning step is performed after the residual gas decomposed in the first cleaning step is discharged to the outside of the semiconductor processing chamber.
The first cleaning step,
A first injection step of injecting a fluorine-based first cleaning gas into the semiconductor processing chamber;
A second injection step of injecting an oxygen-based second cleaning gas into the semiconductor processing chamber;
A first heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas and the second cleaning gas are injected to a predetermined first temperature to maintain the predetermined first temperature; And
And exhausting residual gases remaining in the semiconductor processing chamber after the first heating step.
The second cleaning step,
A third injection step of injecting a fluorine-based third cleaning gas into the semiconductor processing chamber; And
And a second heating step of raising a temperature inside the semiconductor processing chamber into which the first cleaning gas is injected to a predetermined second temperature to maintain the predetermined second temperature. Way.
And the first cleaning gas and the third cleaning gas are NF 3 gas, and the second cleaning gas is O 2 gas.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022055896A1 (en) * | 2020-09-14 | 2022-03-17 | Applied Materials, Inc. | Systems and methods for cleaning low-k deposition chambers |
WO2023048455A1 (en) * | 2021-09-24 | 2023-03-30 | 주성엔지니어링(주) | Method for washing substrate treatment apparatus |
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CN109155233B (en) | 2016-04-15 | 2023-05-23 | 应用材料公司 | Plasma abatement solids avoidance method using oxygen plasma cleaning cycle |
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JP2001140076A (en) * | 1999-08-24 | 2001-05-22 | Applied Materials Inc | Improved method for removing residue from exhaust line of substrate treatment chamber to deposit silicon- oxygen-carbon |
WO2007116768A1 (en) * | 2006-03-27 | 2007-10-18 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method and substrate processing apparatus |
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KR100505065B1 (en) * | 2002-12-26 | 2005-07-29 | 삼성전자주식회사 | Method for deposition chamber cleaning and apparatus for depositing capable of in-situ cleaning |
US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
US20070207275A1 (en) * | 2006-02-21 | 2007-09-06 | Applied Materials, Inc. | Enhancement of remote plasma source clean for dielectric films |
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Patent Citations (2)
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JP2001140076A (en) * | 1999-08-24 | 2001-05-22 | Applied Materials Inc | Improved method for removing residue from exhaust line of substrate treatment chamber to deposit silicon- oxygen-carbon |
WO2007116768A1 (en) * | 2006-03-27 | 2007-10-18 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method and substrate processing apparatus |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2022055896A1 (en) * | 2020-09-14 | 2022-03-17 | Applied Materials, Inc. | Systems and methods for cleaning low-k deposition chambers |
US11572622B2 (en) * | 2020-09-14 | 2023-02-07 | Applied Materials, Inc. | Systems and methods for cleaning low-k deposition chambers |
WO2023048455A1 (en) * | 2021-09-24 | 2023-03-30 | 주성엔지니어링(주) | Method for washing substrate treatment apparatus |
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