KR102037914B1 - Substrate treating apparatus - Google Patents

Substrate treating apparatus Download PDF

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Publication number
KR102037914B1
KR102037914B1 KR1020120154509A KR20120154509A KR102037914B1 KR 102037914 B1 KR102037914 B1 KR 102037914B1 KR 1020120154509 A KR1020120154509 A KR 1020120154509A KR 20120154509 A KR20120154509 A KR 20120154509A KR 102037914 B1 KR102037914 B1 KR 102037914B1
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KR
South Korea
Prior art keywords
line
process chamber
housing
substrate
exhaust
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Application number
KR1020120154509A
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Korean (ko)
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KR20140084728A (en
Inventor
홍남기
Original Assignee
세메스 주식회사
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Priority to KR1020120154509A priority Critical patent/KR102037914B1/en
Publication of KR20140084728A publication Critical patent/KR20140084728A/en
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Publication of KR102037914B1 publication Critical patent/KR102037914B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a substrate processing apparatus. Substrate processing apparatus according to an embodiment of the present invention is a process chamber; A support member provided in the process chamber to support the substrate; A heating unit for heating the substrate placed on the support member; And an exhaust line for exhausting gas in an internal space of the process chamber, wherein the exhaust line comprises: a first line connected to an exhaust port formed in the process chamber; And a second line fixedly installed to surround the first line.

Description

Substrate Processing Unit {SUBSTRATE TREATING APPARATUS}

The present invention relates to a substrate processing apparatus.

In order to manufacture a semiconductor device or a liquid crystal display, various processes of photolithography, etching, ion implantation, deposition and cleaning are performed. Photolithography of these processes forms the desired pattern on the substrate.

In the photolithography process, a coating step of applying a chemical solution on a substrate, an exposure step of forming a specific pattern on the applied photoresist film, and a developing step of removing unnecessary regions of the exposed photoresist film are sequentially performed.

1 and 2 are views illustrating a general substrate processing apparatus.

Referring to FIG. 1, the substrate processing apparatus 10 includes a chamber 2 that provides a space for performing a baking process therein, and a support member that is positioned inside the chamber 2 to heat the substrate s during the process ( 3) and an exhaust line 4. The fume generated during the baking process is discharged to the outside through the exhaust line 4. And, the gas may be introduced from the outside through the inlet (5).

A part of the chamber 2 is provided to be moved up and down for carrying in or out of the substrate S. As shown in FIG. The exhaust line 4 comprises a first line 4a, a second line 4b and a connection line 4c. The first line 4a is connected to the chamber 2. The second exhaust line 4b is connected to the outside of the substrate processing apparatus 10. The first line 4a and the second line 4b are connected by a connection line 4c whose length is variable, so that a part of the chamber 2 can move up and down. In the connection line 4c, wrinkles are formed therein, and the fumes included in the exhaust gas are accumulated. Therefore, when the inner diameter of the connecting line (4c) is narrowed due to the fume, the gas in the chamber (2) is not smoothly discharged. In addition, the fumes accumulated in the exhaust line 4 because the gas is not discharged smoothly flows into the chamber 2 to cause defects. In addition, the connection line 4c requires frequent repair during use.

The present invention is to provide a substrate processing apparatus having an exhaust line in which the discharge of the fume is made smoothly.

In addition, the present invention is to provide a substrate processing apparatus having an exhaust line having a long service life.

Moreover, this invention is providing the substrate processing apparatus which improved the sealing property.

Moreover, this invention is providing the substrate processing apparatus which is easy to perform a cleaning operation.

According to an aspect of the present invention, a substrate processing apparatus for heating a substrate, comprising: a process chamber; A support member provided in the process chamber to support the substrate; A heating unit for heating the substrate placed on the support member; And an exhaust line for exhausting gas in an internal space of the process chamber, wherein the exhaust line comprises: a first line connected to an exhaust port formed in the process chamber; A substrate processing apparatus including a second line fixedly installed to surround the first line may be provided.

According to another aspect of the invention, a substrate processing apparatus for heating a substrate, comprising: a process chamber; A support member provided in the process chamber to support the substrate; A heating unit for heating the substrate placed on the support member; And an exhaust line for exhausting gas in an internal space of the process chamber, wherein the exhaust line comprises: a first line connected to an exhaust port formed in the process chamber; It may include a second line is fixedly installed so that the end is inserted into the inner peripheral surface of the first line.

The exhaust line may further include a connection line having a variable length and having one end fixed to an outer circumferential surface of the second line and the other end fixed to the process chamber.

In addition, a first connecting portion protruding in a radial direction may be provided on an outer circumferential surface of the second line, and one end of the connecting line may be connected to the first connecting portion.

In addition, the outer surface of the process chamber is provided with a second connecting portion spaced apart from the outer peripheral surface of the first line, and provided to surround the first line, the other end of the connecting line may be connected to the second connecting portion.

In addition, the second connection portion may be formed with a pressure control hole in communication with the space formed between the connection line and the first line or the second line.

According to one embodiment of the present invention, the discharge of the fume can be made smoothly.

In addition, according to an embodiment of the present invention, the life of the exhaust line may be provided long.

In addition, according to an embodiment of the present disclosure, the sealing property of the substrate processing apparatus may be improved.

In addition, according to one embodiment of the present invention, a cleaning operation may be simply performed.

1 and 2 show a general conventional substrate processing apparatus.
3 is a plan view of a substrate processing apparatus according to an embodiment of the present invention.
4 is a view illustrating a baking unit according to an exemplary embodiment.
FIG. 5 is a view showing a state of the exhaust line when the first housing is raised. FIG.
6 is a view showing a state of the exhaust line when the first housing is lowered.
7 is a view showing a state of the exhaust line according to another embodiment.
8 is a view showing a state of the exhaust line according to another embodiment.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

3 is a plan view of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, the substrate processing apparatus 10 may continuously process an application process, an exposure process, and a development process. The substrate processing apparatus 10 includes an indexer unit 11, a process processor 20, an interface unit 30, and an exposure process unit 40.

The indexer portion 11 includes a load port 12 and a transfer unit 14. The load port 12 has a rod portion on which a cassette C for receiving a plurality of substrates is placed. The transfer unit 14 is disposed between the load port 12 and the process processor 20, and transfers the substrate between the cassette C and the process processor 20 positioned at the load port 12.

The process processor 20 performs a substrate treatment process. Here, the substrate processing step includes an application step, a baking step, and a developing step. To this end, the process treatment unit 20 includes an application unit 22, a developing unit 24, and a plurality of baking units 100. The coating unit 22 applies the photosensitive liquid onto the substrate. The developing unit 24 supplies the developer to the substrate on which the photoresist film is formed to develop the substrate. The baking unit 100 heats the substrate to a predetermined temperature. The process processor 20 includes at least one transfer robot 26. The transfer robot 26 transfers the substrate between each of the units 22, 24, 100.

The interface unit 30 transfers the substrate between the process processing unit 20 and the exposure process unit 30, and the exposure process unit 40 forms a pattern required for the process on the substrate transferred from the interface unit 30. An exposure process is performed. As the exposure process unit 40, an exposure process apparatus such as a stepper that performs the exposure process may be used.

4 is a view illustrating a baking unit according to an exemplary embodiment.

Referring to FIG. 4, the bake unit 100 includes a process chamber 120, a support member 130, a guide member 150, and an exhaust line 160.

The process chamber 120 forms an internal space in which the substrate is processed. The process chamber 120 is located in the process chamber 110. The process chamber 110 may provide a space that is shielded from the outside. The process chamber 120 may have a shape corresponding to the shape of the substrate processed in the baking unit 100. For example, when the substrate is for manufacturing a semiconductor device, the process chamber 120 may be provided in a cylindrical shape. In addition, when the substrate is for manufacturing a liquid crystal display, it may be provided in a hexahedral shape. Hereinafter, a case where the substrate is for manufacturing a semiconductor device will be described as an example. However, the present invention can also be applied to substrate processing for liquid crystal display manufacture.

The process chamber 120 includes a first housing 121 and a second housing 122. The first housing 121 may be provided in a cylindrical shape with an open upper side. In addition, the second housing 122 may be provided in a cylindrical shape or a plate shape in which a lower side thereof is opened, corresponding to an open upper side of the first housing 121.

 When the second housing 122 is positioned on the open upper side of the first housing 121, the inner space formed by the first housing 121 and the second housing 122 is sealed. The second housing 122 is provided to be movable up and down. In a state in which the second housing 122 is moved upwardly to be spaced apart from the upper surface of the first housing 121 by a predetermined distance, the substrate in the internal space is taken out or the substrate is carried in the internal space from the outside. When the substrate to be processed is loaded into the inner space, the second housing 122 is positioned on the upper surface of the first housing 121 to shield the inner space.

After the substrate is brought into the process chamber 120 with the second housing 122 spaced apart from the first housing 121, the second housing 122 is positioned above the first housing 121. An inlet 123 may be formed at an upper portion of the process chamber 120. For example, the inlet 123 may be formed in the second housing 122 to be positioned on the upper surface of the process chamber 123. In addition, the inlet 123 may be formed in the second housing 122 or the first housing 121 to be located at the side of the process chamber 120. Gas outside the process chamber 120 may be introduced into the internal space through the inlet 123.

The support member 130 is installed in the interior space of the process chamber 120. The support member 130 may be provided to have a larger area than the substrate when viewed from the top. The support member 130 is provided in a disc shape or a polygonal shape and is fixed to the first housing 121. The substrate s loaded into the process chamber 120 is positioned on the support member 130.

The support member 130 is provided with a heating unit 140. The heating unit 140 is provided to exchange heat with the support member 130. The heating unit 140 is installed inside the support member 130 or in contact with the bottom surface of the support member 130. When the heating unit 140 operates, heat generated in the heating unit 140 is conducted to the substrate s so that the substrate s is heated.

The guide member 150 is positioned above the support member 130 to face the support member 130. The guide member 150 may be provided as a plate having a shape corresponding to that of the support member 130. For example, when the upper surface of the support member 130 is provided in a circular shape, the guide member 150 may be provided as a circular plate having a hole formed in the center thereof. The top and side surfaces of the guide member 150 are positioned to be spaced apart from the inner wall of the housing by a predetermined distance. The guide member 150 divides the internal space into an upper space above the guide member 150 and a lower space below the guide member 150. The connection part 151 is provided between the upper surface of the guide member 150 and the housing. The connection part 151 connects the guide member 150 with the second housing 122 to allow the guide member 150 to move together with the second housing 122. The guide member 150 allows the external gas introduced into the inlet 123 to move to the side of the support member 130 in the upper space instead of being directly supplied to the upper surface of the substrate. Thus, the substrate to be heated is prevented from becoming uneven in the temperature distribution by the gas introduced from the outside. During the baking process, the fumes evaporated from the heated gas or the substrate in the internal space are discharged through the exhaust port 124 formed in the second housing 122. At this time, the guide member 150 has a uniform flow of gas formed above the substrate, so that the guide member 150 is moved toward the exhaust port 124. Therefore, the flow of the gas formed on the upper surface of the substrate is non-uniform, thereby preventing the defect from occurring in the substrate.

According to another embodiment, the guide member 150 may be omitted.

5 is a view showing a state of the exhaust line when the first housing is raised, Figure 6 is a view showing a state of the exhaust line when the first housing is lowered.

4 to 6, the exhaust line 160 includes a first line 161, a second line 162, and a connection line 163. The exhaust line 160 communicates with an exhaust port 124 formed in the second housing 122. The first line 161 is in communication with the exhaust port 124. The first line 161 is formed to protrude to the outer surface of the second housing 122. The extending direction of the first line 161 may be provided in the same direction as the moving direction of the second housing 122. One end of the second line 162 is provided to surround the end of the first line 161. The inner circumferential surface diameter of one end of the second line 162 may be provided more than the diameter of the outer circumferential surface of the first line 161. Therefore, when the second housing 122 is moved up and down, the first line 161 may move in the inner circumferential surface of the second line 162. The other end of the second line 162 is provided to be in communication with the outside of the substrate processing apparatus 10. The second line 162 may be provided to be fixed to the process chamber 110. The gap may be provided between the second line 162 and the process chamber 110. Therefore, the process chamber 120 may improve the sealing property from the outside.

The first line 161 or the second line 162 may be provided with metal to have thermal conductivity. Therefore, the temperature distribution of the inner circumferential surface of the first line 161 or the second line 162 through which the gas or the fume flows is prevented from changing rapidly. Therefore, the fume is prevented from adhering to the inner circumferential surface of the first line 161 or the second line 162 where the temperature is low.

The second line 162 may be provided to form a straight line, or may be provided to be bent one or more times. The connection line 163 is provided at a portion where the first line 161 and the second line 162 are connected. The connection line 163 is provided to surround one end of the first line 161 and the second line 162. One end of the connection line 163 is fixed to the outer surface of the process chamber 120, and the other end of the connection line 163 is connected to the outer surface of the second line 162. The connection line 163 is provided to be variable in length. For example, connection line 163 may be provided as a bellows. The second housing 122 may move upwards until one end of the second line 162 contacts the second housing 122. In addition, even when the second housing 122 is moved downward to shield the first housing 121, the end of the first line 161 is provided to be inserted into the second line 162.

The outer circumferential surface of the second line 162 may be provided with a first connection portion 165 protruding in a radial direction. The other end of the connection line 163 may be connected to the connection unit 151. Therefore, the connection line 163 may be positioned to be spaced apart from the outer circumferential surfaces of the first line 161 and the second line 162 by a predetermined distance. Therefore, when the length of the connection line 163 is variable, the connection line 163 is prevented from being damaged due to friction generated between the connection line 163 and the first line 161 or the second line 162. Can be.

In addition, the first connector 165 may be omitted. In this case, the connection line 163 is directly connected to the outer circumferential surface of the second line 162.

According to the exemplary embodiment of the present invention, wrinkles are not formed in the pipe through which the gas or the fume in the space inside the process chamber 120 is exhausted. Therefore, gas or fume can be discharged smoothly. In addition, it is easy to clean the inner circumferential surface of the first line 161 or the second line 162 through which gas or fume flows.

7 is a view showing a state of the exhaust line according to another embodiment.

Referring to FIG. 7, a second connector 125b is provided on an outer surface of the second housing 122b. The second connector 125b is positioned to be spaced apart from the outer circumferential surface of the first line 161b by a predetermined distance. The second connector 125b may be provided in a circle or polygonal shape surrounding the first line 161b. The second connection part 125b is formed to have a predetermined width along the radial direction of the first line 161b. Pressure control holes 126 are formed in a portion where the connecting portion 151 and the upper surface of the second housing 122b are connected. One end of the connection line 163b is connected to the first connection part 165b, and the other end of the connection line 163b is connected to the second connection part 125b.

The space formed between the first line 161b or the second line 162b and the connection line 163b varies in volume while the second housing 122b moves upward or downward. Therefore, gas is introduced or discharged through the pressure adjusting hole 126 to adjust the pressure of the space formed between the first line 161b or the second line 162b and the connection line 163b. Therefore, breakage of the connection line 163b due to the pressure change can be prevented.

In addition, the inner circumferential surface of the second line 162b may be provided to be spaced apart from the outer circumferential surface of the first line 161b by a predetermined distance. Gas in the space formed between the first line 161b or the second line 162b and the connection line 163b may flow to the second line 162b. Therefore, when the second housing 122b moves, the pressure of the space formed between the first line or the second line 162b and the connection line 163b may be adjusted.

The connecting line 163b and the first housing, the support member, the guide member, and the heating unit, which are omitted from the drawing, are the same as in FIG. 3. Therefore, repeated description is omitted.

8 is a view showing a state of the exhaust line according to another embodiment.

Referring to FIG. 8, one end of the second line 161c may be provided to be inserted into the first line 161c. The diameter of the inner circumferential surface of the first line 161c may be provided more than the diameter of the outer circumferential surface of the second line 161c. Accordingly, the second housing 122b may move upward until the end portion of the first line 161c contacts the first connection portion 165b.

The connection line 163c and the first housing, the support member, the guide member, and the heating unit, which are omitted from the drawings, are the same as in FIG. 3. Therefore, repeated description is omitted.

The foregoing detailed description illustrates the present invention. In addition, the above-mentioned contents show preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosures described above, and / or the skill or knowledge in the art. The described embodiments illustrate the best state for implementing the technical idea of the present invention, and various modifications required in the specific fields and applications of the present invention are possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

10: substrate processing apparatus 11: indexer portion
20: process treatment unit 30: interface unit
40: exposure process part 110: process chamber
120: process chamber 130: support member
140: heating unit 150: guide member
160: exhaust line

Claims (6)

In the substrate processing apparatus which heats a board | substrate,
Process room;
A process chamber provided inside the process chamber;
A support member provided in the process chamber to support the substrate;
A heating unit for heating the substrate placed on the support member; And
Including an exhaust line for exhausting the gas in the interior space of the process chamber,
The process chamber,
A first housing; And
And a second housing that is movable relative to the first housing in the up and down direction and is combined with the first housing to define the internal space.
The exhaust line,
A first line connected to an exhaust port formed in the process chamber;
A second line fixed to the process chamber to surround the first line,
The first line is moved along the inner circumferential surface of the second line by the lifting and lowering of the second housing so that the length that the first line is inserted into the second line is provided to be changeable. . In the substrate processing apparatus which heats a board | substrate,
Process room;
A process chamber provided inside the process chamber;
A support member provided in the process chamber to support the substrate;
A heating unit for heating the substrate placed on the support member; And
Including an exhaust line for exhausting the gas in the interior space of the process chamber,
The process chamber,
A first housing; And
And a second housing that is movable relative to the first housing in the up and down direction and is combined with the first housing to define the internal space.
The exhaust line,
A first line connected to an exhaust port formed in the process chamber;
A second line fixed to the process chamber so that an end thereof is inserted into an inner circumferential surface of the first line,
The first line is moved along the outer circumferential surface of the second line by the lifting and lowering of the second housing so that the length that the second line is inserted into the first line is provided to be changeable. . The method according to claim 1 or 2,
The exhaust line, the length of the variable substrate processing apparatus further comprises a connection line is fixed to the outer peripheral surface of the second line and the other end is fixed to the process chamber. The method of claim 3, wherein
The outer circumferential surface of the second line is provided with a first connection portion projecting radially,
One end of the connection line is connected to the first connection unit substrate processing apparatus. The method of claim 3, wherein
The outer surface of the process chamber is provided with a second connecting portion spaced apart from the outer peripheral surface of the first line, and provided to surround the first line,
And the other end of the connection line is connected to the second connection part. The method of claim 5,
And a pressure control hole formed in the second connection part in communication with a space formed between the connection line and the first line or the second line.
KR1020120154509A 2012-12-27 2012-12-27 Substrate treating apparatus KR102037914B1 (en)

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Application Number Priority Date Filing Date Title
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KR102037914B1 true KR102037914B1 (en) 2019-10-29

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KR101885101B1 (en) * 2016-09-19 2018-08-07 세메스 주식회사 Apparatus for treatinf substrate

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KR20040013294A (en) * 2002-08-05 2004-02-14 삼성전자주식회사 Dry etching apparatus for manufacturing semiconductor device
KR20040097978A (en) * 2004-11-01 2004-11-18 대양바이오테크 주식회사 Moveable decanter to discharge an effluent
KR101001308B1 (en) * 2008-11-26 2010-12-14 세메스 주식회사 Bake chamber

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