KR101891391B1 - PbS-BASED QUANTUM DOT, METHOD OF MANUFACTURING THE PbS-BASED QUANTUM DOT, AND PbS-BASED QUANTUM DOT SENSITIZED SOLAR CELL - Google Patents
PbS-BASED QUANTUM DOT, METHOD OF MANUFACTURING THE PbS-BASED QUANTUM DOT, AND PbS-BASED QUANTUM DOT SENSITIZED SOLAR CELL Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000002159 nanocrystal Substances 0.000 claims abstract description 32
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 claims abstract description 18
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 7
- 238000005341 cation exchange Methods 0.000 claims description 7
- 229910001431 copper ion Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229940056932 lead sulfide Drugs 0.000 claims description 4
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 150000004699 copper complex Chemical class 0.000 claims description 2
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 claims description 2
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 20
- 239000000243 solution Substances 0.000 description 16
- 229910052745 lead Inorganic materials 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 9
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
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- 238000004627 transmission electron microscopy Methods 0.000 description 4
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- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- VTCHZFWYUPZZKL-UHFFFAOYSA-N 4-azaniumylcyclopent-2-ene-1-carboxylate Chemical compound NC1CC(C(O)=O)C=C1 VTCHZFWYUPZZKL-UHFFFAOYSA-N 0.000 description 2
- ZHFFVQXXMRDURU-KVVVOXFISA-N C(CCCCCCC\C=C/CCCCCCCC)N.[Cu] Chemical compound C(CCCCCCC\C=C/CCCCCCCC)N.[Cu] ZHFFVQXXMRDURU-KVVVOXFISA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
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- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
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- 235000002639 sodium chloride Nutrition 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- QZVHYFUVMQIGGM-UHFFFAOYSA-N 2-Hexylthiophene Chemical compound CCCCCCC1=CC=CS1 QZVHYFUVMQIGGM-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- GYGAZRPDUOHMAF-UHFFFAOYSA-N acetic acid elaidylester Natural products CCCCCCCCC=CCCCCCCCCOC(C)=O GYGAZRPDUOHMAF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 description 1
- XVBODFCHDIQCGK-KVVVOXFISA-N copper;(z)-octadec-9-enoic acid Chemical class [Cu].CCCCCCCC\C=C/CCCCCCCC(O)=O XVBODFCHDIQCGK-KVVVOXFISA-N 0.000 description 1
- 229910052955 covellite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- NHKDFDHHMHBFLG-COPRSSIGSA-N diethyl (1r,2s,3r,4s)-5,6-bis(4-hydroxyphenyl)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxylate Chemical compound C=1C=C(O)C=CC=1C([C@@H]1O[C@H]2[C@@H]([C@@H]1C(=O)OCC)C(=O)OCC)=C2C1=CC=C(O)C=C1 NHKDFDHHMHBFLG-COPRSSIGSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- GYGAZRPDUOHMAF-KHPPLWFESA-N oleyl acetate Chemical compound CCCCCCCC\C=C/CCCCCCCCOC(C)=O GYGAZRPDUOHMAF-KHPPLWFESA-N 0.000 description 1
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- 238000012916 structural analysis Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/58—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing copper, silver or gold
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
In a PbS-based quantum dot, a method for producing the same, and a PbS-based quantum dot-sensitive solar cell, the Pb-based quantum dot is characterized in that copper sulfide (CuS) is embedded in at least a part of the surface of the lead sulfide (PbS) nanocrystal.
Description
The present invention relates to a PbS-based quantum dot, a method for producing the same, and a PbS-based quantum dot sensitive photovoltaic cell comprising the same. More particularly, the present invention relates to a PbS-based quantum dot capable of improving the efficiency of a solar cell, Type quantum dot sensitive solar cell.
Quantum quantum is an inorganic material that is applied to active layers of optoelectronic devices such as solar cells because it has various advantages such as controlling band-gap energy by controlling its size. As quantum dots, chalcogenide metal quantum dots, for example, CdSe, CdTe, PbS, PbSe and the like are widely known. Of these, lead sulfide (PbS) quantum dots have a strong extinction coefficient, a wide light absorption range from visible light to near infrared wavelength region, a large bohr radius, and good solution processability, Sensitizer, sensitizer).
In depleted heterojunction, depleted bulk heterojunction, and PbS quantum dot-sensitive solar cells, the PbS quantum dots have a thick multi-layer mesoscopic oxidation Titanium < / RTI > electronic conductor.
Indeed, the PbS quantum dot has a strong absorption rate at the band edge due to the strong quantum confinement effect, but since the absorption rate of the PbS quantum dot gradually decreases toward the longer wavelength region, the PbS quantum dot- A quantum dot multilayer structure having a thickness of 100 to 300 nm is required as a light absorbing layer in order to sufficiently absorb external light from the near infrared region to the near infrared region. Both absorption of light and diffusion of charge carriers are important in dye sensitized solar cells.
Since the thick light absorbing layer has a high absorption rate and a long diffusion distance, the thickness of the quantum dot multi-layer structure should be appropriately adjusted. That is, in order to satisfy this requirement, the light absorption layer must have a high light absorption rate while having a thin thickness. Although sensitive solar cells are electronic devices showing high efficiency, solid state PbS quantum dot sensitive solar cells have not been extensively studied because depletion type junction solar cells exhibit higher efficiency.
Sensitive type consisting of fluorine-containing SnO 2 / mesoscopic titanium oxide / PbS quantum dot / spiro-MeOTAD (2,2,7,7-tetrakis (N, N-di-p-methoxyphenylamine) -9,9-spirobifluorene) PbS quantum dot solar cell (Lee et al., Adv. Funct. Mater. 2009, 19, 2735.), fluorine-containing SnO 2 / blocking titanium oxide / mesoscopic titanium oxide / PbS quantum dot / A study on the multi-layered PbS quantum dot sensitive solar cell composed of hexylthiophene / PEDOT: PSS (Poly (3,4-ethylenedioxythiophene) polystyrene sulfonate) / Au (Im et al. ) Have been reported. In addition, a study on a sensitive PbS quantum dot sensitive solar cell with a core / shell structure of mesoscopic PbS quantum dots and CH 3 NH 3 PbI 3 (Seo et al., Phys. Chem. Lett. 2014, 5, 2015) (Kim et al., Chem. Soc., 2013, 135, 5278.) have been reported on a sensitive PbS solar cell using a titanium oxide nanorod electron conductor instead of a mesoscopic oxide titanium oxide.
It is generally known that the interfacial bonding between the quantum dots creates surface traps, so multilayering the light absorbing layer with the PbS quantum dot is not desirable for obtaining a high efficiency optoelectronic device. Techniques for developing interfacial engineering between PbS quantum dots to reduce surface defects or modifying ligands of PbS quantum dots to improve interfacial contact have been continuously being developed to laminate multiple layers of light absorbing layers.
It is an object of the present invention to provide a PbS-based quantum dot as a sensitive material capable of improving the surface plasmon effect and a method for producing the same.
Another object of the present invention is to provide a PbS-based quantum dot-sensitive solar cell including a light absorption layer having a thin thickness and a high light absorptivity so that the diffusion distance is short.
In a Pb-based quantum dot for one purpose of the present invention, copper sulfide (CuS) is embedded in at least a portion of the surface of the lead sulfide (PbS) nanocrystal.
In one embodiment, the atomic ratio of lead to copper to Pb-based quantum dots can be between 5: 1 and 2: 1.
In one embodiment, lead atoms on the surface of the lead sulfide nanocrystals can be replaced with copper to form copper sulfide.
A method for producing Pb-based quantum dots for an object of the present invention comprises the steps of preparing a solution containing an aliphatic amine-based copper complex, and a step of mixing the solution with lead sulfide nanocrystals so that a cation exchange reaction between lead ions and copper ions takes place. Wherein the PbS-based quantum dots have a structure in which copper sulfide (CuS) is embedded in at least a part of a surface of a lead sulfide (PbS) nanocrystal.
In one embodiment, the aliphatic amine-copper complex may be a copper-oleyl amine complex.
In one embodiment, the step of forming the PbS-based quantum dot may be performed at room temperature.
A Pb-based quantum dot solar cell for another purpose of the present invention includes a first electrode for passing external light, a second electrode facing the first electrode, and a second electrode facing the first electrode and the second electrode, A PbS-based quantum dot in which copper sulfide (CuS) causing plasmon resonance is embedded in at least a part of the surface of a lead sulfide (PbS) nanocrystal, a photoelectrode which receives electrons from the PbS-based quantum dot, And a hole conductor for transferring holes from the quantum dot to the second electrode.
In one embodiment, the hole conductor may be a solid hole transport material.
The PbS-based quantum dot, the method for producing the same, and the PbS-based quantum dot solar cell according to the present invention provide a PbS-based quantum dot having improved light absorption in a wide wavelength range by using surface plasmon resonance. Such a PbS-based quantum dot can be easily produced at room temperature by a cation exchange method. The PbS-based quantum dot can be applied to a light absorbing layer of a solar cell having improved light absorption properties while minimizing the diffusion distance between electrons and holes, thereby improving the electrical characteristics and stability of the solar cell.
FIG. 1 is a view for explaining a PbS-based quantum dot and a PbS-based quantum dot-sensitive photovoltaic cell according to the present invention.
FIG. 2 is a view for explaining the movement of electrons and holes from a quantum dot in the light absorbing layer of FIG. 1; FIG.
FIG. 3 is a view for explaining a method of manufacturing PbS-based quantum dots according to the present invention.
FIGS. 4 to 7 are graphs showing characteristics of quantum dots and comparison quantum dots according to the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "having ", etc. is intended to specify that there is a feature, step, operation, element, part or combination thereof described in the specification, , &Quot; an ", " an ", " an "
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
FIG. 1 is a view for explaining a PbS-based quantum dot and a PbS-based quantum dot-sensitive solar cell according to the present invention, and FIG. 2 is a view for explaining the movement of electrons and holes from quantum dots in the light absorption layer of FIG. 1 .
Referring to FIGS. 1 and 2, a PbS-based quantum dot-sensitive solar cell SC includes two electrodes E1 and E2 facing each other and a light absorbing layer PAL interposed therebetween.
Among the two electrodes E1 and E2 facing each other, the first electrode E1 may be a transparent electrode as an electrode disposed on the light receiving side. The first electrode E1 receives sunlight as external light and transmits the sunlight to the light absorbing layer (PAL). The second electrode E2 facing the first electrode E1 is an electrode that receives holes from the light absorbing layer PAL.
The light absorption layer (PAL) includes a PbS-based quantum dot (PHS), a photoelectrode (PE) and a hole conductor (CL).
PbS-based quantum dots (PHS) are quantum dots having a structure in which copper sulfide (CuS) causing plasmon resonance by light is embedded in at least a part of the surface of lead sulfide (PbS) nanocrystals. In this case, "imbed" means not simply a structure in which PbS and CuS have an interface, PbS is a core and CuS is a shell on the PbS or a structure in which Cu is doped in PbS, In the lattice structure, the Pb atoms are replaced by Cu atoms, meaning that the lattice structure of PbS is substantially free of deformation and that Cu atoms are introduced into the Pb atom. In FIG. 1, PbS-based quantum dots (PHS) are shown as distinguishing PbS and CuS in order to show the presence of CuS together with PbS, but PbS-based quantum dots (PHS) means a material having a single lattice structure.
PbS-based quantum dots (PHS) have a single rock salt phase, and PbS and CuS have a single lattice structure, not a material having a different lattice structure. PbS-based quantum dots (PHS) may be colloidal.
In a PbS-based quantum dot (PHS), the atom ratio of Pb and Cu may be 5: 1 to 2: 1. When the atomic ratio of Pb and Cu is less than 5: 1, for example, 6: 1 or less, the surface plasmon effect hardly appears. Further, when the atomic ratio of Pb and Cu in the PbS-based quantum dots (PHS) is larger than 2: 1, that is, when the content of Cu exceeds the content of Pb, the PbS quantum dot-specific quantum dot characteristic is lost.
As shown in FIG. 2, a PbS-based quantum dot (PHS) generates an exciton, and the generated exciton is quickly separated into free electrons (e - ) and holes (h + ). Then, the electrons e - and the holes h + move effectively to the electron electrode PE and the hole conductor CL, respectively.
The photoelectrode (PE) receives electrons from the PbS-based quantum dot (PHS). The photoelectrode (PE) is a material which facilitates the injection of electrons generated in the PbS-based quantum dot (PHS) and effectively transfers injected electrons to the first electrode (E1). The photoelectrode (PE) may be formed of a metal oxide. Examples of the metal oxide include titanium oxide, tin oxide, zinc oxide, tungsten oxide, and the like. For example, mesoporous TiO 2 (m-TiO 2 ) may be used as the metal oxide.
The hole conductor CL transfers holes from the PbS-based quantum dot (PHS) to the second electrode E2. The hole conductor CL is a layer substantially serving as an electrolyte, and may have a solid phase.
Although not shown in the drawing, the PbS-based quantum dot-sensitive solar cell SC may further include a layer such as a blocking layer disposed between the first electrode E1 and the light absorbing layer PAL.
FIG. 3 is a view for explaining a method of manufacturing PbS-based quantum dots according to the present invention.
Referring to FIG. 3, first, a solution of PbS nanocrystals and an aliphatic amine-copper complex is prepared.
In the production of the PbS-based quantum dot of the present invention, an aliphatic amine-copper complex is used as a precursor of CuS. As an example of the aliphatic amine compound, an oleyl amine can be mentioned. The aliphatic amine compound is a nonpolar amine compound which has weaker interaction with copper ion than the interaction of copper ion (Cu 2+ ) with a compound such as oleyl acetate containing an ionic functional group and is chemically stable This compound is suitable for the production of CuS. At this time, the aliphatic amine-copper complex can be prepared by mixing a solvent, the aliphatic amine compound and a copper halide (CuX, wherein X represents Cl, Br or I).
If oleic acid-copper complexes are used, copper ions can not be introduced into PbS nanocrystals because oleic acid has a strong interaction with copper ions.
When an aliphatic amine-copper complex is provided in a PbS nanocrystal, the cationic exchange reaction for CuS begins at the surface of the PbS nanocrystal, and since the copper diffuses from the outside to the inside of the PbS nanocrystal, Is strongly dependent on the concentration of the solution containing the aliphatic amine-copper complex. Therefore, when a solution containing an excessive aliphatic amine-copper complex is added, the PbS nanocrystals are all converted into CuS, so that the content of the solution containing the aliphatic amine-copper complex is appropriately adjusted so that only the surface of the PbS nanocrystal It is preferable to control so as to form CuS. At this time, it is preferable that the content of the solution containing the aliphatic amine-copper complex is determined such that the atomic ratio of Pb and Cu in the PbS-based quantum dot according to the present invention is 5: 1 to 2: 1.
PbS-based quantum dots are formed by mixing a solution containing the prepared PbS nanocrystals with a solution of an aliphatic amine-copper complex and causing a cation exchange reaction between the lead ion and the copper ion to occur. Thus, PbS-based quantum dots are prepared in which copper sulfide (CuS) is embedded in at least a part of the surface of lead sulfide (PbS) nanocrystals. The PbS-based quantum dots produced at this time are colloidal quantum dots, and this process can be performed at room temperature.
Hereinafter, the present invention will be described more specifically with reference to production examples and comparative samples.
Preparation Example: Preparation of PbS-based quantum dot sample 1
(1) Preparation of PbS nanocrystals
Using a hot-injection method, PbS nanocrystals stabilized with oleic acid were prepared as follows. 1.25 mmol of lead (II) -acetate trihydrate (lead (II) acetate trihydrate) was mixed with 2.5 mmol of oleic acid in a round bottom flask using magnetic stirring. The mixed solution was degassed under vacuum at 110 ° C for 2 hours by stirring, then cooled to 85 ° C under a nitrogen atmosphere, and 0.5 mmol of bis (trimethylsilyl) sulfide [bis (trimethylsilyl) sulfide] was immediately injected to prepare an ODE solution containing PbS nanocrystals.
(2) Preparation of copper-aliphatic amine-based composite
Oleylamine, copper bromide (CuBr) and ODE were mixed with an ODE solution containing PbS nanocrystals prepared above at room temperature to prepare a copper-oleylamine complex. The ODE solution containing the copper-oleylamine complex was degassed under stirring at 110 DEG C for 2 hours with stirring and cooled to room temperature.
(3) Preparation of CuS-doped PbS-based quantum dots
An ODE solution containing a copper-aliphatic amine-based complex and an ODE solution containing PbS nanocrystals were mixed by stirring at room temperature for 10 minutes. Thus, CuS-based PbS-based quantum dots (PbS [CuS] quantum dots) according to the present invention in which CuS was embedded on the surface of PbS nanocrystals were prepared. At this time, the molar ratio of Cu to S in CuS was 0.5: 1.
Comparative Example: Preparation of Comparative Samples 1 and 2
As Comparative Sample 1, a PbS quantum dot was prepared.
As a comparative sample 2, a CuS nanocrystal with a molar ratio of Cu to S of 2: 1 was prepared.
Absorption characteristics and structural analysis results
Ultraviolet-visible-near-infrared absorbance spectra of the PbS-based quantum sample 1 and the comparative samples 1 and 2 were measured in an ODE solution state, and TEM (transmission electron microscopy) photographs were taken. The results are shown in Fig.
Further, EDX (electron dispersive X-ray spectroscopy) line-profile anaylsis was performed on the PbS-based quantum dot sample 1, and the results are shown in FIG.
(B) is a TEM photograph of the comparative sample 1, and (c-1) is a TEM image of a PbS-based quantum dot sample 1 at a scale of 50 nm (C-2) is a TEM image of the PbS-based quantum dot sample 1 on the scale of 5 nm.
In FIG. 5, the first graph shows the spectrum for each of the distributions of Cu, S and Pb simultaneously, and the second, third and fourth graphs separately show Cu, S and Pb respectively.
Referring to FIG. 4A, when the absorbance change (red curve) of the PbS [CuS] quantum dot as the PbS-based quantum dot sample 1 is compared with the PbS quantum dot (black curve), there is a significant change in absorbance . The new absorption peaks appearing in the near-infrared wavelength range not shown in the PbS quantum dots are due to the surface plasmon resonance due to the presence of CuS in the PbS [CuS] quantum dots.
The absorbance change (blue curve) of the CuS nanocrystals of the comparative sample 2 shows two absorption peaks respectively separated in the visible light region and the near infrared region, and the absorption peak in the visible light region is the direct band gap, and the absorption peak in the near infrared region can be attributed to the surface plasmon resonance due to the vacancy of Cu.
Referring to FIGS. 4 (b) and 4 (c), it can be seen that the size of the PbS quantum dot is ~ 4 nm in the TEM photograph of FIG. 4 (b). In the case of the PbS [CuS] quantum dot, It can be seen that the PbS quantum dot exhibits a substantially similar pattern to the size and uniformity of the PbS quantum dot. That is, it can be seen that there is almost no change in size or uniformity of the particles in the course of the cation exchange reaction for forming CuS. In FIG. 4 (c), however, it can be seen that there is a different structure from the PbS quantum dot due to the difference in electron density between Pb and Cu on the 5 nm scale.
Referring to FIG. 5 together with FIG. 4, it can be confirmed that CuS is actually present in the PbS [CuS] quantum dots. Generally, in order to form an epitaxial interface, such as a core / shell structure or an alloy, a crystal structure or a lattice constant must be the same or similar to each other. If the crystal structure or lattice constant is not satisfied, A defect is generated. Based on this theory, since PbS and CuS have different lattice structures as different materials, it is very difficult to form a single single material without defects, but according to the same method as the production example of the present invention It can be confirmed that PbS [CuS] quantum dots including both PbS and CuS were actually produced through cation exchange reaction using an aliphatic amine.
J.M. In Luter et al. (2009, 131, 16851.), a heterostructure PbS / CdS quantum dot is grown by cation exchange reaction on a hexagonal lattice structure of CdS on a cubic PbS quantum dot And CuS having a hexagonal lattice structure, for example, CuS, which is a covellite or a digenit E, is used as a base, it is merely a heterostructure, The technique of maintaining the rock-salt phase as a single phase of the PbS nanocrystal by replacing the Pb atoms with the Cu atoms as in the invention is possible only by the method of manufacturing the PbS-based quantum dots described above.
The molar ratio of Pb and Cu in the PbS [CuS] quantum dots of the PbS-based quantum dot sample 1 was 100:40 to 100: 42, and the ratio of the Pb atoms to the Cu atoms in the portion shown on the scale of 5 nm in FIG. 7: 3 to 7: 4. On the other hand, considering that the atomic ratio of Pb and Cu is 6: 1 or less when nanocrystals of PbS and CuS are synthesized with a core / shell structure, the prepared PbS [CuS] quantum dots are not core / It can be confirmed that it has a structure embedded in PbS.
Optical property evaluation
For each of the PbS-based quantum dot sample 1, the comparative sample 1, and the PbS-based quantum dot sample 2, changes in photoluminescence intensity and change in photoluminescence intensity with time were measured. The results are shown in Fig. In the PbS-based quantum dot sample 2, the molar ratio of Cu to S of CuS was 0.06: 1.
6 (a) is a graph showing the change in photoluminescence intensity of each of the PbS-based quantum dot samples 1 and 2 and the comparative sample 1 by wavelength, and FIG. 6 (b) is a graph showing changes in photoluminescence intensity with time.
6A, the graphs of PbS-based quantum dot samples 1 (PbS / CuS (0.5: 1)) and 2 (PbS / CuS (0.06: 1)) and Comparative Sample 1 (PbS) (PbS not containing CuS), the quenching remarkably occurred in the photoluminescence as the mole ratio of Cu and S increased from 0.06: 1 to 0.5: 1. This can be attributed to the fact that the excitons generated in the PbS quantum dots were separated into free charge carriers due to the formation of a junction between CuS and PbS. Since CuS is generally known as a p-type semiconductor due to its abundant Cu depletion, the holes produced in the PbS quantum dot will be transported to CuS, and if the CuS moiety meets a hole transport material such as P3HT (poly-3-hexylthiophene) PbS [CuS] quantum dots.
Referring to FIG. 6 (b), PbS-based quantum dot sample 2 decays slowly with the change of the photoluminescence intensity with time of PbS-based quantum dot sample 2 and comparative sample 1, whereas PbS- It can be seen that the sample 2 declines more than twice as fast as the sample 2 of the total quantum dots. That is, it can be confirmed that the lifetime of the PbS-based quantum dot sample 2 is longer than that of the PbS quantum dot of the comparative sample 1 by two times or more.
Production of solar cell sample 1 and comparative solar cell 1
In order to determine the optoelectronic properties, bl-TiO 2 layer (~ 50 nm), m- TiO 2 -PbS [CuS] quantum dot layer (~ 600 nm), P3HT layer (~ 30 nm) and gold electrodes (~ 60 nm) To thereby produce a solar cell sample 1 having the structure shown in FIG. 7 (a). At this time, the PbS [CuS] quantum dots used for the solar cell sample 1 were the same as those of the PbS quantum dots sample 2 (i.e., when the molar ratio of Cu and S was 0.06: 1).
A comparative solar cell 1 having substantially the same structure as that of the solar cell sample 1 except that the quantum dot layer was made of PbS instead of the PbS [CuS] quantum dot was prepared.
Evaluation of solar cell characteristics
For each of solar cell 1 and comparative solar cell 1, the current density according to the voltage change was measured in the dark condition with the solar condition, and the external quantum efficiency (EQE) according to the wavelength was measured. The results are shown in Fig.
7 (a) is a SEM photograph showing a multi-plane structure of a solar cell sample 1 manufactured according to an embodiment of the present invention, (b) shows a current density according to a voltage change, Respectively.
Referring to FIG. 7A, the open circuit voltage Voc of the solar cell sample 1 was about 0.6 V in the solar condition (100 mW · cm -2 AM 1.5 G), and the short circuit electron density Jsc was 20.7 mA · cm -2 , a fill factor (FF) of 65%, and a total power conversion efficiency (η) of 8.07%. On the other hand, the comparative solar cell 1 had Voc of 0.49 V, Jsc of 12.3 mA · cm -2 , FF of 39% and eta of 2.36% under the same solar condition.
Referring to FIG. 7 (b), it can be seen that the EQE in the wavelength range of 400 nm or more is higher in the solar cell sample 1 than in the comparative solar cell 1. The calculated Jsc based on the EQE result is 20.2 mA · cm -2 for each of the solar cell sample 1 and the comparative solar cell 1, similar to the actually measured value in the JV curve in Figure 7 (a), and 12.4 mA Cm < -2 & gt ; .
7 (a) and 7 (b), it can be seen that the solar cell sample 1 has improved Jsc, Voc and FF by 68%, 22% and 67%, respectively, as compared with the comparative solar cell. Improvements in Jsc are highly related to the resulting EQE spectrum, such as light harvesting efficiency, charge separation efficiency, and charge collection efficiency. Here, since the PbS [CuS] quantum dots exhibit a strong absorption ratio in the near-infrared region compared with the PbS quantum dots, the light harvesting efficiency in the near-infrared region can be expected to be high, and the effective charge separation in PbS [CuS] It is expected that the charge separation efficiency and the charge collection efficiency that can be exhibited can be improved.
In addition, the PbS [CuS] quantum dot improves Voc as compared to the PbS quantum dot, and improved charge separation and collection efficiency can improve FF by improving shunt resistance and series resistance.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.
PHS: PbS-based quantum dots PbS: Lead-doped nano-crystals
CuS: copper sulfide SC: solar cell
E1, E2: first and second electrodes PE: photoelectrode
CL: hole conductor PAL: light absorbing layer
Claims (8)
PbS-based quantum dots characterized in that the atomic ratio of lead to copper is from 5: 1 to 2: 1.
Wherein the lead atoms on the surface of the lead sulfide nanocrystals are replaced with copper to form copper sulfide.
Pb-based quantum dots.
And mixing said solution with said lead sulfide nanocrystals to form a PbS-based quantum dot so that a cation exchange reaction takes place between the lead ion and the copper ion,
The PbS-based quantum dot is characterized in that copper sulphide (CuS) is embedded in at least a portion of the surface of the lead sulfide (PbS) nanocrystal.
A method of manufacturing a PbS-based quantum dot.
Wherein the aliphatic amine-copper complex is a copper-oleyl amine complex.
Wherein the step of forming the PbS-based quantum dot is performed at room temperature.
A second electrode facing the first electrode; And
A PbS-based quantum dot interposed between the first and second electrodes and embedded in at least a part of the surface of the lead sulfide (PbS) nanocrystal, wherein copper sulfide (CuS) causing plasmon resonance by light, And a light absorbing layer comprising a photoelectric body that receives electrons from the PbS-based quantum dots and a hole conductor that transfers holes from the PbS-based quantum dots to the second electrode,
PbS - based quantum dot sensitive solar cell.
Characterized in that the hole conductor is a solid hole transport material.
PbS - based quantum dot sensitive solar cell.
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| Title |
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| L Sun, et al., "PbS quantum dots embedded in a ZnS dielectric matrix for bulk heterojunction solar cell applications" , Advanced Materials, 2013. |
| M Eskandari, et al., "Copper sulfide/Lead sulfide as a Highly Catalytic Counter Electrode for Zinc Oxide Nanorod Based Quantum Dot Solar Cells" , Electrochimica Acta, 2015. |
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