KR101852862B1 - By-directional contact module for semiconductor test and semiconductor test socket - Google Patents

By-directional contact module for semiconductor test and semiconductor test socket Download PDF

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Publication number
KR101852862B1
KR101852862B1 KR1020150182883A KR20150182883A KR101852862B1 KR 101852862 B1 KR101852862 B1 KR 101852862B1 KR 1020150182883 A KR1020150182883 A KR 1020150182883A KR 20150182883 A KR20150182883 A KR 20150182883A KR 101852862 B1 KR101852862 B1 KR 101852862B1
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KR
South Korea
Prior art keywords
support member
mesh
longitudinal direction
conductive
mesh portion
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KR1020150182883A
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Korean (ko)
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KR20170074272A (en
Inventor
이지형
이은주
Original Assignee
주식회사 이노글로벌
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Priority to KR1020150182883A priority Critical patent/KR101852862B1/en
Priority to PCT/KR2016/000326 priority patent/WO2017111198A1/en
Publication of KR20170074272A publication Critical patent/KR20170074272A/en
Application granted granted Critical
Publication of KR101852862B1 publication Critical patent/KR101852862B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0416—Connectors, terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Environmental & Geological Engineering (AREA)

Abstract

The present invention relates to a bidirectional contact module for semiconductor testing and a semiconductor test socket using the same. The bidirectional contact module for semiconductor testing according to the present invention comprises an upper support member of an insulating material having elasticity extending in the longitudinal direction and a contact member which is attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction, A lower support member made of an insulating material having elasticity extending in the longitudinal direction and spaced apart in the vertical direction from the upper support member; and a plurality of upper mesh portions provided on the lower surface of the lower support member, A lower mesh portion having a conductive property to be attached to the terminals of the inspection circuit board so as to be spaced apart from each other in the longitudinal direction so as to correspond to the upper mesh, and an upper support member and a lower support member respectively coupled at both sides in the vertical direction, And a lateral support member made of an insulating material formed to extend outwardly from the upper and lower support members And, characterized in that one side comprises a plurality of the upper and lower connecting portion is a conductive material that is connected to an upper mesh portion and the other side connected to a lower portion provided with a wire mesh form. Accordingly, it is possible to realize a fine pitch and to secure a stable electrical contact even if the height is made long or short in the vertical direction, by making up for the disadvantages of the pogo-pin type and the PCR type semiconductor test socket.

Description

TECHNICAL FIELD [0001] The present invention relates to a bidirectional contact module for semiconductor testing and a semiconductor test socket using the same.

The present invention relates to a bidirectional conductive sheet, a semiconductor test socket using the same and a method of manufacturing a bidirectional conductive sheet. More particularly, the present invention relates to a bidirectional contact module for semiconductor testing, And a semiconductor test socket using the same.

The semiconductor device is subjected to a manufacturing process and then an inspection for judging whether the electrical performance is good or not. Inspection is carried out with a semiconductor test socket (or a connector or a connector) formed so as to be in electrical contact with a terminal of a semiconductor element inserted between a semiconductor element and an inspection circuit board. Semiconductor test sockets are used in burn-in testing process of semiconductor devices in addition to final semiconductor testing of semiconductor devices.

The size and spacing of terminals or leads of semiconductor devices are becoming finer in accordance with the development of technology for integrating semiconductor devices and miniaturization trends and there is a demand for a method of finely forming spaces between conductive patterns of test sockets.

However, conventional Pogo-pin type semiconductor test sockets have a limitation in manufacturing semiconductor test sockets for testing integrated semiconductor devices. 1 to 3 are views showing an example of a conventional pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.

1 to 3, the conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed at a position corresponding to the terminal 131 of the semiconductor device 130 in a vertical direction, A pogo-pin 120 mounted in the through hole 111 of the housing 110 for electrically connecting the terminal 131 of the semiconductor device 130 and the pad 141 of the test apparatus 140, Lt; / RTI >

The configuration of the pogo-pin 120 includes a barrel 124 having a cylindrical shape, which is used as a pogo-pin body and has an empty interior, and a barrel 124 formed below the barrel 124 A contact tip 123 and a spring 122 connected to the contact tip 123 within the barrel 124 for contraction and expansion movement and a spring 122 connected to the contact tip 123, 130 for performing up-and-down movement in accordance with the contact with the contact pins 121.

At this time, the spring 122 contracts and expands while absorbing the mechanical impact transmitted to the contact pin 121 and the contact tip 123, and the pad 131 of the semiconductor device 130 and the pad (141) are electrically connected to check whether there is an electrical failure.

In the conventional pogo-pin type semiconductor test socket, a physical spring is used to maintain the elasticity in the vertical direction, and a spring and a pin are inserted into the barrel, and a barrel It is required to be inserted into the through hole of the housing again, so that the process is complicated and the manufacturing cost increases due to the complexity of the process.

In addition, the physical structure itself for realizing the electrical contact structure having elasticity in the up and down direction has a limitation in realizing the fine pitch, and in recent years, it has already reached a limit to be applied to the integrated semiconductor device.

In order to overcome the limitations of a pogo-pin type semiconductor device, a technique has been proposed in which a perforated pattern is formed in a vertical direction on a silicon body made of a silicone material of elastic material, To form a conductive pattern.

However, the PCR type semiconductor test socket also has a problem due to the structural limitations of the PCR type semiconductor test socket, such as shortening the lifetime due to the disengagement of the conductive powder filled in the inside.

Accordingly, there is a demand for development of other types of semiconductor test sockets after finishing the problems of the height limit and the semiconductor test socket of the other type such as the PCR type semiconductor test socket while enabling the implementation of the fine pitch.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to overcome the disadvantages of the pogo-pin type and the PCR type semiconductor test socket and to realize a fine pitch, And it is an object of the present invention to provide a bidirectional contact module for semiconductor testing and a semiconductor test socket using the same, which can ensure stable electrical contact even when implemented.

According to the present invention, there is provided a semiconductor device comprising: an upper support member of an insulating material having elasticity extending in the longitudinal direction; and a conductive member which is attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction, A lower support member made of an insulating material having elasticity extending in the longitudinal direction and spaced apart in the vertical direction from the upper support member; And the upper and lower support members are connected to each other at the upper and lower sides on both sides, and the upper and lower support members are connected to each other at the upper and lower sides in the longitudinal direction, A lateral support bar made of an insulating material so as to extend outwardly from the member and the lower support member, And the other side connected to a conductive material connected to the lower mesh portion is achieved by the two-way keontekteu module for a semiconductor test, comprising a plurality of upper and lower connection portion provided in a wire form.

The upper mesh portion and the lower mesh portion may include a base mesh having a network structure and a plating layer formed by plating a conductive metal on the base mesh.

The base mesh may be made of an insulating polymer material or a metal material.

When the base mesh is made of a polymer compound material, the plating layer may be formed by sequentially plating copper, nickel, and gold.

At least one of the upper surface of the upper mesh portion and the lower surface of the lower mesh portion may be provided with a metal powder to form a rough surface.

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The upper support member is made of an insulating material having elasticity extending in the longitudinal direction. The upper support member has a plurality of upper mesh portions which are attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction, A lower support member made of an insulating material having elasticity extending in the lengthwise direction and spaced apart from the upper support member in a longitudinal direction, The upper and lower support members are coupled at both sides in the up and down direction, and both sides of the upper and lower support members are connected to the upper and lower support members A lateral support bar made of an insulating material and formed to extend outward, Wherein the upper support member is exposed to the upper surface of the upper support member to electrically contact one of the upper mesh members and the other side of the upper support member is electrically connected to the lower surface of the upper support member The exposed upper conductive powder is formed corresponding to the plurality of upper mesh portions along the longitudinal direction; A lower conductive powder having one side exposed to the lower surface of the lower support member in electrical contact with one lower mesh portion and the other exposed to the upper surface of the lower support member, Formed corresponding to the mesh portion; A connection conductive pattern for electrically connecting the upper conductive powder and the lower conductive powder, which correspond to each other, is formed along the longitudinal direction; It is preferable that the upper conductive powder, the connection conductive pattern and the lower conductive powder, which are electrically connected to each other, form one vertical connection portion and one connection conductive pattern is formed by winding the outer peripheral portion of the horizontal support bar at least once by the conductive wire Do.

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According to another aspect of the present invention, the above object can be attained by providing an internal housing having a square shape opened in the up and down direction and having a plurality of slots formed from the top to the bottom corresponding to a pair of opposite sides, A plurality of bidirectional contact modules respectively inserted in a pair of slots in which the bidirectional contact modules are inserted into the slots, and an outer housing provided in an empty frame shape and coupled with the inner housing such that a plurality of bidirectional contact modules are exposed upwardly; An upper support member of an insulating material having elasticity extending in the longitudinal direction; a plurality of upper mesh portions attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction to have contact with the terminals of the semiconductor element, A lower support member made of an insulating material having elasticity extending in the longitudinal direction and spaced apart from the upper support member in a vertical direction; The upper and lower support members are coupled at both sides in the up and down direction, and both sides of the upper and lower support members are connected to each other on the outer side of the upper and lower support members A lateral support bar made of an insulating material and formed so as to extend from the upper mesh part to the lower mesh part, A plurality of upper and lower connecting portion and connected to, the side edges of the transverse support bar of the two-way keontekteu module is achieved by the semiconductor test sockets, characterized in that respectively inserted in the slots on both sides.

According to the present invention, the upper and lower mesh members 50 and 50 are formed on the upper support member and the lower support member made of an insulating material, and then the upper support member and the lower support member are attached It is possible to manufacture the bidirectional contact module by a simpler method.

In addition, the pitch in the transverse direction can be adjusted only by adjusting the interval between the upper mesh portion and the lower mesh portion, thereby overcoming the pitch limit of the conventional Pogo-pin type semiconductor test socket.

Further, the thickness of the upper support member, the lower support member, or the horizontal support bar can be adjusted to more easily adjust the thickness in the vertical direction, and the upper mesh portion, the lower mesh portion, So that a more stable electrical connection is possible.

Figs. 1 to 3 are views for explaining a conventional pogo-pin type semiconductor test socket,
4 is a view for explaining a bidirectional contact module for semiconductor testing according to a first embodiment of the present invention,
5 is a view for explaining a bidirectional contact module for semiconductor testing according to a second embodiment of the present invention,
6 is a view showing embodiments of lateral support bars of the bidirectional contact module for semiconductor testing according to the present invention,
7 is an exploded perspective view of a semiconductor test socket according to the present invention,
8 is a cross-sectional view of a semiconductor test socket according to the present invention,
9 is a cross-sectional view of a bidirectional contact module 1e according to a third embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a view for explaining the bidirectional contact module 1 for semiconductor testing according to the first embodiment of the present invention. 4, the bidirectional contact module 1 for semiconductor testing according to the first embodiment of the present invention includes an upper support member 20, a plurality of upper mesh portions 40, a lower support member 30, A plurality of lower mesh portions 50, a horizontal support bar 10, and a plurality of upper and lower connection portions.

The upper support member 20 is made of an insulating material having elasticity extending in the longitudinal direction. In the present invention, it is assumed that the upper support member 20 is made of a silicone material having elasticity.

The lower support member 30 is made of an insulating material having elasticity extending in the longitudinal direction corresponding to the shape of the upper support member 20. [ As in the case of the upper support member 20, the lower support member 30 is made of a silicone material having elasticity.

A plurality of upper mesh portions 40 are attached to the upper surface of the upper support member 20 so as to be mutually spaced along the longitudinal direction. Here, each of the upper mesh portions 40 is provided to be conductive, and the upper mesh portion 40 is formed in such a manner that when the bidirectional contact module 1 according to the present invention is applied to a semiconductor test socket, 1).

The plurality of lower mesh portions 50 are attached to the lower surface of the lower support member 30 so as to be mutually spaced along the longitudinal direction. Herein, each of the lower mesh portions 50 is provided to be conductive and the lower mesh portions 50 are formed in the same direction as the pads 510 of the test apparatus 500 when the bidirectional contact module 1 according to the present invention is applied to a semiconductor test socket. , See Fig. 8).

In the present invention, the upper mesh portion 40 and the lower mesh portion 50 are fabricated to have conductivity by a plating layer formed by plating metal of a conductive material on a base mesh of a network structure.

For example, when the base mesh is made of a synthetic polymer compound material such as polyester, after the plating of copper, nickel and gold may be sequentially plated to form a plated layer. As another example, when the base mesh is made of a metal material such as SUS (SUS), a plating layer may be formed through sequential plating of nickel and gold.

Here, in the present invention, the upper surface of each of the upper mesh portions 40 is shown as having a flat shape. However, the upper mesh portion 40 may be formed to have a concavo-convex shape by applying a powder of conductive material. Also, the lower mesh portion 50 may be provided to have a concavo-convex shape through application of powder of a conductive material.

The lateral support bar 10 is disposed between the upper support member 20 and the lower support member 30. [ That is, the upper support member 20 is coupled to the upper portion of the transverse support bar 10 and the lower support member 30 is coupled to the lower portion of the transverse support bar 10. Here, the lateral support bar 10 is made of an insulating material, and is made of a rigid material more than the upper support member 20 and the lower support member 30. Here, it is preferable that the rigidity of the lateral support bar 10 is provided so as to have rigidity not to bend downward pressure formed by the semiconductor device when inspecting the semiconductor device through the semiconductor test socket according to the present invention , And a detailed description thereof will be described later.

The lateral support bar 10 according to the present invention is formed such that both lateral sides of the lateral support bar 10 extend laterally outward than the upper support member 20 and the lower support member 30. When applied to a semiconductor test socket to be described later, A structure for coupling can be used, and a detailed description thereof will be described later.

The plurality of upper and lower connection portions electrically connect the upper mesh portion 40 and the lower mesh portion 50 at mutually corresponding positions. In the first embodiment of the present invention, as shown in FIG. 4 (b), the upper and lower connecting portions are formed such that one side is in contact with the lower surface of the upper mesh portion 40 and the other side is in contact with the lower surface of the lower mesh portion 50 And is provided in the form of a conductive wire (W) to be contacted.

4 (b) illustrates an example in which the cover member 20 'is formed of an insulating material so that the wire W is not exposed to the outside. After forming the wire W, the liquid silicone is applied, So that the conductive wire W can be prevented from being exposed to the outside.

The upper mesh portion 40 and the lower mesh portion 50 are formed on the upper support member 20 and the lower support member 30 made of an insulating material and then the upper mesh portion 40 and the lower mesh portion 50 are formed on the lateral support bar 10 It is possible to manufacture the bidirectional contact module 1 in a simpler manner by attaching the upper support member 20 and the lower support member 30. [

Further, the pitch in the transverse direction can be adjusted only by adjusting the interval between the upper mesh portion 40 and the lower mesh portion 50, thereby overcoming the pitch limit of the conventional Pogo-pin type semiconductor test socket .

In addition, the thickness of the upper support member 20, the lower support member 30 or the horizontal support bar 10 can be adjusted to more easily adjust the thickness in the vertical direction, and the upper mesh portion 40 having conductivity, The lower mesh portion 50, and the wire W electrically connecting the upper mesh portion 50 and the lower mesh portion 50, a more stable electrical connection becomes possible.

Hereinafter, a bidirectional contact module 1a for semiconductor testing according to a second embodiment of the present invention will be described with reference to FIG. The contact test module 1a for semiconductor testing according to the second embodiment of the present invention includes a plurality of upper mesh portions 40a, an upper support member 20a, a lateral support bar 10a, a lower support member 30a, A lower mesh portion 50a and a plurality of upper and lower connecting portions.

As shown in Fig. 5, the bidirectional contact module 1a for semiconductor testing according to the second embodiment of the present invention includes a plurality of upper mesh portions 40a, an upper support member 20a, 10a, the lower support member 30a and the lower mesh portion 50a are sequentially formed in the same manner as in the first embodiment, and the structure and materials of the lower support member 30a and the lower mesh portion 50a correspond to those of the first embodiment.

In the second embodiment of the present invention, a plurality of upper conductive powders 70a are formed on the inner side of the upper support member 20a along the longitudinal direction at positions corresponding to the plurality of upper mesh portions 40a. 5B, each of the upper conductive powder 70a is exposed on the upper surface of the upper support member 20a so that one side of the upper conductive powder 70a is exposed to the upper surface of the upper mesh portion 40a ). Then, the other side of each upper conductive powder 70a is exposed on the lower surface of the upper support member 20a.

Similarly, a plurality of lower conductive powders 80a are formed on the inner side of the lower support member 30a along the longitudinal direction at positions corresponding to the plurality of lower mesh portions 50a. More specifically, as shown in FIG. 5B, each of the lower conductive powder 80a is exposed on the lower surface of the lower supporting member 30a on one side, ). Then, the other side of each lower conductive powder 80a is exposed on the upper surface of the lower supporting member 30a.

A connection conductive pattern 60a electrically connecting the upper conductive powder 70a and the lower conductive powder 80a to each other is formed in the lateral support bar 10a along the longitudinal direction. In the second embodiment of the present invention, one connecting conductive pattern 60a is formed on the upper surface, the lower surface, and the upper surface of the lateral supporting bar 10a, as shown in Figs. 5A and 6A, And a conductive sheet that covers at least one side of both side surfaces.

That is, a conductive sheet is formed on the upper surface and the lower surface of the lateral support bar 10a, and a conductive sheet for electrically connecting the conductive sheet on the upper surface and the conductive sheet on the lower surface is formed on at least one side of both side surfaces .

Through the above-described structure, one upper conductive powder 70a, one connection conductive pattern 60a, and one lower conductive powder 80a, which correspond to each other, are electrically connected to form one vertical connection portion, The upper conductive powder 70a is electrically connected to the upper mesh portion 40a and the lower conductive powder 80a is electrically connected to the lower mesh portion 50a so that the upper mesh portion 40a and the lower mesh portion 50a Can be electrically connected to each other.

Here, the conductive sheet may be provided in the form of a flexible circuit board on which at least one surface of the PI film is plated with a conductive material. That is, the plating material of the flexible circuit board is patterned in the form of the connecting conductive pattern 60a according to the present invention, the connecting conductive pattern 60a is formed at the corresponding portion through nickel and gold plating, So that the connection conductive pattern 60a can be formed on the transverse supporting bar 10a.

6 is a view showing another example of the connection conductive pattern 60a of the lateral support bar 10a of the bidirectional contact module 1a for semiconductor testing according to the present invention. 6 (b) shows an example in which a perforated hole bored in the vertical support bar 10b is formed in the lateral support bar 10b, and the inner surface of the perforated hole is provided in the form of a via hole coated with a conductive metal. Here, it is preferable that a conductive pad electrically connected to the via hole is formed on the upper surface and the lower surface of the via hole.

6 (c) shows an example in which the connecting conductive pattern 60c is formed by winding at least one outer side of the lateral support bar 10c with a conductive wire. When the outer diameter of the lateral support bar 10c is wound around the conductive bar to be spaced apart from each other by the conductive wire, the upper conductive powder 70a and the lower conductive powder 80a are electrically connected to at least one of them.

6C is a view showing an example in which the conductive wires are independently wound, and after one long conductive wire is wound in a state of being continuously spaced apart from each other, When the side conductive wires are cut in the transverse direction, the adjacent conductive wires may be electrically disconnected to form the connection conductive pattern 60d.

The connection conductive patterns 60a, 60b, 60c and 60d described above are formed on the lateral support bars 10a, 10b, 10c and 10d and then the both side surfaces of the lateral support bars 10a, 10b, By coating with a conductive material, it is possible to enable insulation between adjacent bidirectional contact modules 1a when manufacturing semiconductor test sockets.

Hereinafter, the semiconductor test socket according to the present invention will be described in detail with reference to FIGS. 7 and 8. FIG.

A semiconductor test socket according to the present invention includes an inner housing 300, a plurality of bidirectional contact modules 1a, and an outer housing 400.

The inner housing 300 has a rectangular shape opened in the vertical direction. A plurality of slits 310 are formed so as to correspond to a pair of opposing sides of the inner housing 300 from top to bottom.

Each of the two-way contact modules 1a is inserted into a pair of mutually facing slots. Here, both side edges of the lateral support bar 10a of the bidirectional contact module 1a are inserted into slots on both sides and installed in the inner housing 300. [ Here, the bidirectional contact module 1a is as described above. In FIG. 7, the bidirectional contact module 1a according to the second embodiment of the present invention is applied.

The outer housing 400 is provided with an inner hollow structure and is coupled to the inner housing 300 such that a plurality of bidirectional contact modules 1a are exposed upwardly. When the outer housing 400 is pressed and fixed to the test apparatus 500 in the downward direction, the lower mesh portion 50a of the bidirectional contact module 1a contacts the pad 510 of the test apparatus 500 State.

A bolt passage hole 410 through which the coupling bolt 420 for coupling the outer housing 400 with the test apparatus 500 is formed is formed in the outer housing 400, A bolt fastening hole 520 is formed at a position corresponding to the bolt fastening hole 410 so that the fastening bolt 420 passing through the bolt passing hole 410 is fastened to the bolt fastening hole 520, Can be fixed to the test apparatus.

As described above, since the semiconductor test socket can be manufactured by inserting the bidirectional contact module 1a into the slit 310 of the inner housing 300, it is possible to manufacture by the simpler method.

Even if the number of terminals of the semiconductor device changes, the number of slots of the inner housing 300 and the number of conductive lines in the vertical direction of the bidirectional contact module 1a are changed by the same method, A semiconductor test socket for testing semiconductor devices becomes possible.

In the above-described embodiment, the upper mesh portions 40 and 40a and the lower mesh portions 50 and 50a are made conductive by the plating layer. The upper mesh portion 40a and the lower mesh portion 50a according to the second embodiment of the present invention are made of an insulating material and then the conductive powder 70a constituting the upper conductive powder 70a and the lower conductive powder 80a The upper mesh portion 40a and the lower mesh portion 50a may be exposed to the outside of the upper mesh portion 40a and the lower mesh portion 50a through the network structure so that the upper mesh portion 40a and the lower mesh portion 50a have conductivity.

9 is a cross-sectional view of a bidirectional contact module 1e according to a third embodiment of the present invention. 9, the bidirectional contact module 1e according to the third embodiment of the present invention includes a plurality of upper mesh portions 40e, an upper support member 20e, a lateral support bar 10e, A plurality of lower mesh portions 50e, and a plurality of upper and lower connecting portions.

Here, a plurality of the upper mesh portions 40e, the upper support members 20e, the lateral support bars 10e, the lower support members 30e, the plurality of upper mesh portions 40e, The basic structure of the lower mesh portion 50e corresponds to the above-described first or second embodiment, and a description thereof will be omitted.

The upper mesh portion 40e and the lower mesh portion 50e of the bidirectional contact module 1e according to the third embodiment of the present invention are connected via the side base mesh 20e ' The connection portion is covered by the side base mesh 20e '.

When the upper mesh portion 40e and the lower mesh portion 50e are electrically conductive through plating, only the regions corresponding to the upper mesh portion 40e and the lower mesh portion 50e in the process of plating the base mesh are plated And the remaining portion, that is, the region located on the side surface of the bidirectional contact module 1e, is not plated, as shown in Fig. 9, so that the side surface base mesh portion 20e ' W).

When the upper mesh portion 40e and the lower mesh portion 50e are electrically conductive by the conductive powder, the base mesh is bent and attached as shown in FIG. 9, and the upper conductive powder 70a and the lower conductive powder 80a are exposed to the outside of the upper mesh portion 40e and the lower mesh portion 50e through the network structure so that the upper mesh portion 40e and the lower mesh portion 50e are conductive, May be provided to form the side base mesh portion 20e '.

Although several embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various modifications may be made without departing from the principles and spirit of the invention . The scope of the invention will be determined by the appended claims and their equivalents.

1.1a: Contact module for semiconductor test
10, 10a, 10b, 10c, 10d: lateral support bars 20, 20a: upper support member
30, 30a: Lower support member 40, 40a: Upper mesh portion
50, 50a:
60a, 60b, 60c, 60d: connection conductive pattern
70a: upper conductive powder 80a: lower conductive powder
300: inner housing 310: slit
400: outer housing W: wire

Claims (12)

An upper support member made of an insulating material having elasticity extending in the longitudinal direction,
A plurality of upper mesh portions which are attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction and contact with the terminals of the semiconductor element,
A lower support member of an insulating material disposed in a state of being spaced apart from the upper support member in the vertical direction and having elasticity extending in the longitudinal direction,
A lower mesh portion having a conductive property and being in contact with the terminals of the inspection circuit board in a state of being spaced apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes on the lower surface of the lower support member;
Wherein the upper support member and the lower support member are coupled at both sides in the up and down direction and both sides in the longitudinal direction are formed so as to extend outwardly from the upper support member and the lower support member,
And a plurality of upper and lower connection portions, each of which is formed in a shape of a conductive material, one side of which is connected to the upper mesh portion and the other side of which is connected to the lower mesh portion. The method according to claim 1,
The upper mesh portion and the lower mesh portion
A base mesh having a network structure,
And a plating layer formed on the base mesh by plating a metal of a conductive material. 3. The method of claim 2,
Wherein the base mesh is made of an insulating polymer material or a metal material. The method of claim 3,
Wherein when the base mesh is formed of a polymer compound material, the plating layer is formed by sequentially plating copper, nickel, and gold. 3. The method of claim 2,
Wherein at least one of an upper surface of the upper mesh portion and a lower surface of the lower mesh portion is provided with a metal powder to form a rough surface. The method according to claim 1,
Wherein each of the upper and lower connection portions is formed of a conductive material having a wire shape in which one side is connected to the upper mesh portion and the other side is connected to the lower mesh portion. An upper support member made of an insulating material having elasticity extending in the longitudinal direction,
A plurality of upper mesh portions which are attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction and contact with the terminals of the semiconductor element,
A lower support member of an insulating material disposed in a state of being spaced apart from the upper support member in the vertical direction and having elasticity extending in the longitudinal direction,
A lower mesh portion having a conductive property and being in contact with the terminals of the inspection circuit board in a state of being spaced apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes on the lower surface of the lower support member;
Wherein the upper support member and the lower support member are coupled at both sides in the up and down direction and both sides in the longitudinal direction are formed so as to extend outwardly from the upper support member and the lower support member,
And a plurality of upper and lower connecting portions electrically connecting the upper and lower mesh portions to each other,
And the upper conductive powder is exposed in the upper surface of the upper supporting member to electrically contact one of the upper mesh portions and the other side is exposed to the lower surface of the upper supporting member, A plurality of upper mesh portions corresponding to the plurality of upper mesh portions;
A lower conductive powder having one side thereof exposed on the lower surface of the lower support member and in electrical contact with one of the lower mesh portions and the other side exposed to the upper surface of the lower support member, A plurality of lower mesh portions corresponding to the plurality of lower mesh portions;
A connection conductive pattern for electrically connecting the upper conductive powder and the lower conductive powder, which correspond to each other, is formed along the longitudinal direction;
Wherein the upper conductive powder, the connection conductive pattern, and the lower conductive powder, which are mutually electrically connected, form one upper and lower connection portion,
Wherein one of the connection conductive patterns is formed by winding an outer diameter of the lateral support bar at least once with a conductive wire. delete delete delete delete An inner housing having a rectangular shape opened in a vertical direction and having a plurality of slots formed in an upper portion to a lower portion corresponding to a pair of opposite sides,
A plurality of bidirectional contact modules each inserted into a pair of mutually facing slots,
And an outer housing, the inner housing being provided in an empty frame shape and coupled with the inner housing such that a plurality of the bidirectional contact modules are exposed upwardly;
An upper support member made of an insulating material having elasticity extending in the longitudinal direction,
A plurality of upper mesh portions which are attached to the upper surface of the upper support member so as to be spaced apart from each other in the longitudinal direction and contact with the terminals of the semiconductor element,
A lower support member of an insulating material disposed in a state of being spaced apart from the upper support member in the vertical direction and having elasticity extending in the longitudinal direction,
A lower mesh portion having a conductive property and being in contact with the terminals of the inspection circuit board in a state of being spaced apart from each other in the longitudinal direction so as to correspond to the plurality of upper meshes on the lower surface of the lower support member;
Wherein the upper support member and the lower support member are coupled at both sides in the up and down direction and both sides in the longitudinal direction are formed so as to extend outwardly from the upper support member and the lower support member,
And a plurality of upper and lower connecting portions electrically connecting the upper and lower mesh portions to each other,
And both side edges of the lateral support bars of the bidirectional contact module are inserted into the slots on both sides.
KR1020150182883A 2015-12-21 2015-12-21 By-directional contact module for semiconductor test and semiconductor test socket KR101852862B1 (en)

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KR1020150182883A KR101852862B1 (en) 2015-12-21 2015-12-21 By-directional contact module for semiconductor test and semiconductor test socket
PCT/KR2016/000326 WO2017111198A1 (en) 2015-12-21 2016-01-13 Bidirectional contact module for semiconductor test and semiconductor test socket using same

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