KR101762230B1 - Plasma device having enhanced plasma intensity - Google Patents

Plasma device having enhanced plasma intensity Download PDF

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Publication number
KR101762230B1
KR101762230B1 KR1020150127428A KR20150127428A KR101762230B1 KR 101762230 B1 KR101762230 B1 KR 101762230B1 KR 1020150127428 A KR1020150127428 A KR 1020150127428A KR 20150127428 A KR20150127428 A KR 20150127428A KR 101762230 B1 KR101762230 B1 KR 101762230B1
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KR
South Korea
Prior art keywords
antenna coil
power source
frequency
antenna
high frequency
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KR1020150127428A
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Korean (ko)
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KR20170030195A (en
Inventor
서기원
Original Assignee
(주)얼라이드 테크 파인더즈
서기원
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Priority to KR1020150127428A priority Critical patent/KR101762230B1/en
Publication of KR20170030195A publication Critical patent/KR20170030195A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H2001/4645—

Abstract

A plasma apparatus of the present invention includes: a chamber in which a workpiece is plasma-processed; An antenna coil installed outside the chamber and forming the plasma while rotating about a center axis; A chuck unit installed inside the chamber and on which a workpiece is seated; An RF power source for applying a high frequency power to the antenna coil or the chuck unit; .

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma apparatus having an RF power source unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma apparatus for plasma processing a workpiece such as a substrate by receiving a high frequency power from an RF power source unit.

Plasma is used in a surface treatment technique for forming a fine pattern on the surface of a workpiece such as a semiconductor wafer or an LCD glass substrate. Plasma sources that generate plasma have been developed in accordance with the semiconductor fine circuit line width or LCD size.

Typical examples of the plasma source include a capacitive coupling plasma (CCP) and an inductively coupled plasma (ICP) induced by an antenna coil. The CCP method is led by TEL (Tokyo electron) of Japan and LRC (Lam Research) of the United States, and the ICP method is led by US AMT (Applied Materials) and LRC corporation.

The ICP method is advantageous in that it can generate plasma at a low pressure and has a high density of plasma, so that the microcircuit correspondence is good. On the other hand, there is a disadvantage in that the plasma uniformity deteriorates due to the structural problem of the antenna.

The CCP method has the advantage of generating a uniform plasma, but there is a fear that the electric field directly affects the workpiece, thereby damaging the fine pattern. In addition, the plasma density is lower than that of the ICP method, which is disadvantageous for fine pattern formation. In addition, since a large power (7th generation, 8th generation) is applied to a large area of a large glass substrate, it is difficult to uniformly transmit power to the electrodes, and workpieces and devices are damaged due to high power.

Korean Patent Registration No. 0324792 discloses a technique of applying a modulated wave with low frequency power to high frequency power, but does not mention the securing of plasma uniformity.

Korean Patent Registration No. 0324792

The present invention is intended to improve plasma intensity or uniformity in a plasma apparatus.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise forms disclosed. Other objects, which will be apparent to those skilled in the art, It will be possible.

In one embodiment, a plasma apparatus of the present invention includes: a chamber in which a workpiece is plasma-processed; An antenna coil installed outside the chamber and forming the plasma while rotating about a center axis; A chuck unit installed inside the chamber and on which a workpiece is seated; An RF power source for applying a high frequency power to the antenna coil or the chuck unit; .

Here, the RF power unit controls the frequency of the RF power applied to the antenna coil or the chuck unit, thereby improving the strength or uniformity of the plasma.

The plasma intensity and uniformity can be improved by applying a high frequency power source of different frequencies.

In addition, a predetermined strength and uniformity can be ensured by the rotating antenna coil. However, since the rotation locus is circular, when the cross-sectional shape of the chamber is a quadrangle, the auxiliary antenna is used as means for securing the plasma strength and uniformity of the four corners. .

1 is an overall sectional view showing a main part of a plasma apparatus of the present invention.
2 is a perspective view of an antenna coil of the present invention.
3 is a cross-sectional view showing an embodiment of a plasma apparatus according to the present invention in which a double frequency is applied to an antenna coil and a chuck unit is grounded.
4 is a cross-sectional view showing an embodiment of a plasma apparatus to which a dual frequency is applied to a chuck unit in the present invention.
5 is a plan view showing an embodiment in which a fixed auxiliary antenna is provided around a rotating antenna coil of the present invention in a circular shape.
FIG. 6 is a plan view showing an embodiment in which the auxiliary antenna of FIG. 5 is provided in a U-shape.
7 and 8 are side cross-sectional views illustrating various embodiments in which RF power is applied to the auxiliary antenna of FIG.
FIG. 9 is a plan view showing an embodiment in which auxiliary antennas in a fixed state are arranged in the outer corners around the rotating antenna coil of the present invention.

1 is an overall sectional view showing a main part of a plasma apparatus of the present invention. 2 is a perspective view of an antenna coil of the present invention. The plasma apparatus of the present invention will be described with reference to Figs. 1 and 2. Fig.

The plasma apparatus of the present invention includes a chamber in which a workpiece is plasma-processed, an antenna coil that generates plasma as it rotates as an ICP source outside the chamber, and a chuck unit that is installed inside the chamber and on which the workpiece is seated.

Here, the RF power unit for applying the RF power to the antenna coil or the chuck unit is provided, and the RF power unit can improve the strength or uniformity of the plasma by controlling the frequency of the RF power applied to the antenna coil or the chuck unit.

The antenna coil 130 rotates to generate plasma of uniform density.

The chuck unit 150 is installed inside the chamber 110 and the workpiece 10 such as a wafer or an LDC substrate can be seated on the chuck unit 150.

The inside of the antenna coil 130, the rear end portion 134b of the antenna coil 130, the rotator 342, and the frame 340 through the cooling water hole 134c provided at the rear end portion 134b of the antenna coil 130 The cooling water can flow. The rotating portion of the cooling water flow passage can be sealed with the O-ring 113. [

The rear end portion 134b of the antenna coil 130 can be fixed to the rotator 342 through the fastening hole 134d. The antenna coil 130 and the rotator 342 may be fixed by a fastening hole 134d and integrally rotated.

The rotator 342 may be rotatably supported with respect to the frame 340 together with the antenna coil 130. A bearing 350 may be interposed between the rotator 342 and the frame 340. When the bearing 350 is formed of a conductive metal, the bearing 350 can be the frame ground terminal 340a and the antenna coil ground terminal 340b.

The antenna coil 130 can rotate around the virtual line c-c 'as a central axis.

The antenna coil 130 may include a center coil 131 serving as a center of rotation and a plurality of branch coils 133 connected in parallel to the center coil 131. The branch coil 133 may be positioned on the coaxial axis where the front end portion 137 connected to the center coil 131 and the rear end portion 134b connected to the power grounding portion substantially rotate. For this purpose, the branch coil 133 may have a closed curve shape in which one side such as a U-shape or a C-shape is opened.

An RF power source 170 for providing a high frequency power source through a slip ring 139 or the like may be electrically connected to an end of the center coil 131.

The high frequency power source applied to the antenna coil 130 is a high frequency RF power source having a predetermined frequency for plasma generation. The high frequency power source has a frequency of several hundred KHz to several hundreds of MHz and is generated in the power source unit 170 and applied through the slip ring 139.

At this time, by controlling the frequency of the high frequency power source applied to the antenna coil 130, the intensity of the plasma can be enhanced and the uniformity can be improved. To this end, the present invention provides various embodiments below.

3 is a cross-sectional view illustrating an embodiment of a plasma apparatus according to the present invention in which a dual frequency is applied to an antenna coil 130 and a chuck unit 150 is grounded.

For example, two or more kinds of frequencies may be applied to the rotating antenna coil 130 to optimize the plasma state depending on the state of the workpiece and the processing conditions. For example, a first RF power supply unit 170a for generating a high frequency power supply having a first frequency of 100 MHz and a second RF power supply unit 170b for generating a high frequency power supply having a second frequency of 13.5 MHz are provided, The strength and uniformity of the plasma can be improved by connecting the RF power unit 170a and the second RF power unit 170b to the antenna coil 130 at the same time and controlling the RF power applied to the antenna coil 130 . If a high-frequency power source with a relatively high frequency is loaded on a low-frequency high-frequency power source, the accuracy and etching speed of the workpiece can be improved as compared with the case of forming a plasma with a single frequency high-frequency power source. This is because the intensity of the plasma that applies the impact force to the workpiece is improved or uniformed.

In addition, since the antenna coil 130 of the present invention is not in a stationary state and rotates as an ICP source outside the chamber 110 to form an ICP plasma, the dual frequency control function is added, and the plasma intensity and uniformity are further improved .

The chuck unit 150 can be electrically biased to further enhance plasma intensity and uniformity. 3 shows an embodiment in which dual frequency is applied to the antenna coil 130 and the chuck unit 150 is grounded.

4 is a cross-sectional view showing an embodiment of a plasma apparatus in which dual frequency is applied to the chuck unit 150 in the present invention. The present invention is not limited to the embodiment of FIG. 3, and a single-frequency or dual-frequency high-frequency power source can be applied to the chuck unit 150 regardless of the application frequency of the antenna coil 130.

For example, a third RF power source unit 170c for applying a high frequency power source of the third frequency to the chuck unit 150 may be provided, or a fourth RF power source unit (for example, 170d may be provided. The third RF power unit 170c or the fourth RF power unit 170d may be connected to the chuck unit 150.

For example, a high frequency power source having a first frequency of 100 MHz is applied to the antenna coil 130, a high frequency power source having a third frequency of 5 MHz is applied to the chuck unit 150, The fourth RF power source having the fourth frequency can be applied to the chuck unit 150 at the same time.

The RF power supply unit 170 can apply a high frequency power having various frequencies to the antenna coil 130 or the chuck unit 150 according to the kind of the workpiece and the processing condition and as a result the strength or uniformity of the ICP plasma source is strengthened .

5 is a plan view showing an embodiment in which a fixed auxiliary antenna 520 is circularly formed around a rotating antenna coil 130 of the present invention. In addition to the method of adjusting the frequency of the RF power source 170, in the present invention, the auxiliary antenna 520 may be provided around the rotating antenna coil 130 to deform or reinforce the plasma forming profile of the antenna coil 130 have.

5, an auxiliary antenna 520 is disposed in a fixed or rotated state. The auxiliary antenna 520 may be disposed outside the antenna coil 130. The auxiliary antenna 520 can reinforce the intensity or uniformity of the plasma with respect to the outer periphery of the antenna coil 130.

For example, the first RF power supply unit 170a that generates a high frequency power of the first frequency of 100 MHz is connected to the antenna coil 130, and the second RF power supply unit 170b that generates a high frequency power of the second frequency of 13.5 MHz May be connected to the auxiliary antenna 520. [

One end of the auxiliary antenna 520 may be connected to the second RF power source unit 170b and the other end of the auxiliary antenna 520 may be connected to the ground unit 510. [

When the rotation locus of the antenna coil 130 forms a virtual circumference, an auxiliary antenna 520 having an arc shape along the outer side of the circumference may be provided. As shown, the arc-shaped auxiliary antenna 520 can be disposed at the outer periphery of the antenna coil 130 in a fixed state.

FIG. 6 is a plan view showing an embodiment in which the auxiliary antenna 520 of FIG. 5 is provided in a U-shape. The embodiment of Fig. 6 is an improvement or modification of the shape of the auxiliary antenna 520 of Fig. According to this, the auxiliary antenna 520 is provided in a bent U-shape or a closed curve shape having one side opened outside the rotation locus of the antenna coil 130. 5 shows an arc shape formed by a single coil, but FIG. 6 can form a closed curve auxiliary antenna 520 with two strands of coil. When the second RF power source unit 170b and the ground unit 510 are formed as a closed curve shape having an opening 522 at one side as a starting point and an end point, the auxiliary antenna 520 is formed of two strands of coil at a specific position, The smoothing of the voltage applied to the specific position of the antenna 520 can be achieved.

In addition, a high frequency power of the first frequency may be applied to the antenna coil 130 and a high frequency power of the second frequency may be applied to the auxiliary antenna 520 to improve plasma intensity or uniformity by the dual frequency.

7 and 8 are side cross-sectional views illustrating various embodiments in which RF power is applied to the auxiliary antenna 520 of FIG. 7 is an embodiment in which the same high frequency power source of the first frequency is applied to the antenna coil 130 and the auxiliary antenna 520. FIG. 8 shows an embodiment in which the first RF power supply unit 170a is connected to the antenna coil 130 and the second RF power supply unit 170b is connected to the auxiliary antenna 520. FIG. The embodiment of FIG. 8 can be implemented by dividing the RF power supply 170 into hardware or software and controlling to generate high frequency power of two frequencies.

Even after the antenna coil 130 and the auxiliary antenna 520 are already installed, the optimum plasma processing conditions can be derived by controlling the single frequency of FIG. 7 or the dual frequency of FIG. 8 according to the processing conditions.

9 is a plan view showing an embodiment in which a fixed auxiliary antenna 520 is arranged around outer corners around the rotating antenna coil 130 of the present invention.

For example, assuming that the cross-section of the chamber 110 is rectangular, the antenna coil 130 is rotated, and thus a weak portion of the plasma may essentially occur in the rectangular vertex 540. In order to prevent this, the auxiliary antenna 520 may be fixed or rotated on the outer vertex 540 of the rotating antenna coil 130.

That is, when the rotational trajectory of the rotating antenna coil 130 forms a virtual circumference, a virtual rectangular window 530 including the virtual circumference can be defined. The rectangular window 530 may be coincident or resembling the cross-sectional shape of the chamber 110.

If the first auxiliary antenna 520a, the second auxiliary antenna 520b, the third auxiliary antenna 520c and the fourth auxiliary antenna 520d are disposed in the four vertices 540 of the rectangular window 530, Non-uniform elements can be removed.

In the illustrated embodiment, the first to fourth auxiliary antennas 520a to 520d are arranged in a fixed state. However, the present invention is not limited to this, and the first to fourth auxiliary antennas 520a to 520d May rotate at the same speed as the antenna coil 130 or rotate at different speeds.

A high frequency power of a first frequency may be applied to the rotating antenna coil 130 and a high frequency power of a second frequency different from the first frequency may be applied to the first to fourth auxiliary antennas 520a to 520d .

For example, the rotating antenna coil 130 may be connected to a first RF power source 170a that generates a high frequency RF power of a first frequency.

One end of the first to fourth auxiliary antennas 520a to 520d may be connected to a second RF power source unit 170b that generates a high frequency power source of the second frequency. The other ends of the first to fourth auxiliary antennas 520a to 520d may be connected to the grounding unit 510.

The first to fourth auxiliary antennas 520a to 520d may be arranged axially symmetrically with respect to the center axis of the rotating antenna coil 130 or the center coil 131. The arrangement of the axially symmetric shape is advantageous in that it can be handled by the auxiliary antenna 520 of the same shape even if the arrangement position is different.

It is possible to increase the number of times the coil passes per unit area by zigzag from one end of the first auxiliary antenna 520a to the other end of the fourth auxiliary antenna 520d. So that the average voltage becomes constant.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.

10 ... Workpiece 110 ... chamber
113 ... O-ring 130 ... Antenna coil
131 ... Center coil 133 ... Branch coil
134b ... The rear end 134c ... Cooling water hole
134d ... Fastening holes 137 ... Tip
139 ... Slip ring 342 ... Rotator
340 ... Frame 340a ... Frame ground terminal
340b ... Antenna coil ground terminal 350 ... bearing
150 ... Chuck unit 170 ... RF power unit
170a ... First RF power unit 170b ... Second RF power unit
170c ... Third RF power section 170d ... Fourth RF power section
510 ... ground unit 520 ... Auxiliary antenna
520a ... The first auxiliary antenna 520b ... The second auxiliary antenna
520c ... The third auxiliary antenna 520d ... Fourth auxiliary antenna
522 ... The opening 530 ... Square window
540 ... A chap

Claims (12)

1. An ICP (Inductive Coupling Plasma) plasma apparatus in which an inductively coupled plasma is formed in a chamber in which a workpiece is subjected to plasma processing,
An antenna coil disposed outside the chamber and forming an inductively coupled plasma in the chamber while rotating with respect to a central axis, the plasma source forming the inductively coupled plasma, and an auxiliary antenna disposed around the antenna coil;
A chuck unit installed inside the chamber and on which a workpiece is seated;
An RF power source for applying a high frequency power to the antenna coil or the chuck unit; Lt; / RTI >
The RF power unit controls the frequency of the RF power applied to the antenna coil or the chuck unit,
The high frequency power source of the first frequency is applied to the rotating antenna coil,
A high frequency power source having a second frequency different from the first frequency is applied to the auxiliary antenna,
And the auxiliary antenna disposed at an outer periphery of the antenna coil reinforces the strength or uniformity of the inductively coupled plasma with respect to an outer periphery of the antenna coil. delete The method according to claim 1,
A third RF power unit for applying a high frequency power of a third frequency to the chuck unit or a fourth RF power unit for applying a high frequency power of a fourth frequency to the chuck unit. The method according to claim 1,
Wherein the high frequency power source of the first frequency and the high frequency power source of the second frequency are applied to the rotating antenna coil and the chucking unit is grounded to the grounding unit. The method according to claim 1,
The high frequency power source of the first frequency and the high frequency power source of the second frequency are applied to the rotating antenna coil,
And a high-frequency power source having a third frequency is applied to the chuck unit. delete delete The method according to claim 1,
When the rotation locus of the antenna coil forms a virtual circumference,
Wherein the auxiliary antenna is formed to have an arc shape along an outer side of the virtual circumference, and the auxiliary antenna is disposed around the antenna coil in a fixed state. The method according to claim 1,
Wherein the auxiliary antenna is formed in a bent U-shape or a closed curve shape with one side opened outside the rotation locus of the antenna coil. The method according to claim 1,
When the rotation locus of the rotating antenna coil forms a virtual circumference,
A virtual rectangular window including the virtual circumference is defined,
Wherein a first auxiliary antenna, a second auxiliary antenna, a third auxiliary antenna, and a fourth auxiliary antenna are arranged in a fixed state on four vertices of the rectangular window. 11. The method of claim 10,
The high frequency power of the first frequency is applied to the rotating antenna coil,
And the high frequency power of the second frequency is applied to the first to fourth auxiliary antennas. 11. The method of claim 10,
Wherein the RF power source unit includes a first RF power source unit for applying a high frequency power source of the first frequency and a second RF power source unit for applying the high frequency power source of the second frequency,
The rotating antenna coil is connected to the first RF power source,
The first auxiliary antenna to the fourth auxiliary antenna are disposed axially symmetrically with respect to the center axis of the rotating antenna coil,
One end of the first to fourth auxiliary antennas is connected to the second RF power source,
And the other ends of the first to fourth auxiliary antennas are connected to a ground.
KR1020150127428A 2015-09-09 2015-09-09 Plasma device having enhanced plasma intensity KR101762230B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200003561A (en) 2018-07-02 2020-01-10 주식회사 기가레인 A substrate processing apparatus for mechanically controlling plasma density
KR20200009647A (en) 2018-07-19 2020-01-30 아이엔이 주식회사 Multi rotation type plasma generating apparatus
KR20200009639A (en) 2018-07-19 2020-01-30 아이엔이 주식회사 Bottom cathode module of plasma process apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100324792B1 (en) 1993-03-31 2002-06-20 히가시 데쓰로 Plasma processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200003561A (en) 2018-07-02 2020-01-10 주식회사 기가레인 A substrate processing apparatus for mechanically controlling plasma density
KR20200009647A (en) 2018-07-19 2020-01-30 아이엔이 주식회사 Multi rotation type plasma generating apparatus
KR20200009639A (en) 2018-07-19 2020-01-30 아이엔이 주식회사 Bottom cathode module of plasma process apparatus

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