KR101738524B1 - Remote Plasma Cleaning Method and Cleaning Apparatus - Google Patents
Remote Plasma Cleaning Method and Cleaning Apparatus Download PDFInfo
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- KR101738524B1 KR101738524B1 KR1020150130342A KR20150130342A KR101738524B1 KR 101738524 B1 KR101738524 B1 KR 101738524B1 KR 1020150130342 A KR1020150130342 A KR 1020150130342A KR 20150130342 A KR20150130342 A KR 20150130342A KR 101738524 B1 KR101738524 B1 KR 101738524B1
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- remote plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A remote plasma cleaning apparatus and cleaning method are disclosed. A remote plasma cleaning apparatus according to the present invention includes: a semiconductor deposition chamber for performing a process in vacuum; A remote plasma device installed outside the deposition chamber and connected to the deposition chamber to maintain the same vacuum; Wherein the plasma power output frequency of the remote plasma apparatus varies from 200 KHz to 500 KHz according to an impedance; A nitrogen trifluoride supply connected to the gas inlet pipe connected to the remote plasma apparatus; A nitrogen supply unit connected to the gas inlet pipe connected to the remote plasma apparatus; And an oxygen supply unit connected to the gas inlet pipe connected to the remote plasma apparatus, wherein oxygen is added after the plasma discharge by the nitrogen supplied from the nitrogen supply unit.
According to the present invention, there is provided a method for increasing the cleaning rate while significantly reducing the amount of the triple nitrogen gas used in the periodic cleaning process of the semiconductor deposition reaction furnace, thereby reducing the generation of greenhouse gases and improving the cleaning rate .
Description
The present invention relates to a remote plasma cleaning apparatus and a cleaning method using the same. More particularly, the present invention relates to a remote plasma cleaning apparatus capable of reducing nitrogen trifluoride used in a semiconductor wafer manufacturing process, And a cleaning method using the remote plasma cleaning apparatus.
Generally, today, semiconductor devices are classified into three processes: lithography for pattern formation, deposition for depositing a thin film, and etching for etching a deposited film according to a pattern.
The deposition process, which is one of the indispensable processes for manufacturing a semiconductor device, is mostly performed in a vacuum reactor, and the deposited thin film is deposited not only on the wafer but also on the walls of the chamber and on the wafer stage.
As the thin film to be deposited thickens, it affects the process and sometimes peels off the wafer element due to peeling and causes defects.
Accordingly, a cleaning process is performed by generating a plasma in the reaction furnace or remotely generating a plasma to introduce active species (radical) of the florine-based gas into the chamber.
Flourine gas used for cleaning mainly uses nitrogen trifluoride (NF 3 ), which is an environmentally harmful gas with a very high warming index.
These compound gases emit toxic byproducts, absorb infrared wavelengths, and have long periods of time in the atmosphere, which has a major impact on global warming.
The presence of perfluorocarbons (PFCs) amounts to thousands of times the amount of carbon dioxide (CO 2 ), and the effects of global warming are in the thousands to tens of thousands times.
Therefore, efforts are needed to reduce the amount of perfluorocarbons emitted after the semiconductor production process, or to develop new gases that do not emit global warming gas.
Korean Patent Application No. 10-2003-7015440 discloses "cleaning gas and etching gas ".
The prior art was to provide a cleaning gas comprising a perfluoro cyclic ether having from two to four oxygen atoms ether bonded to a carbon atom.
Conventionally, argon (Ar) has been used to generate a remote plasma, followed by nitrogen trifluoride (NF 3 ), and a combination of argon and nitrogen trifluoride or nitrogen trifluoride alone has been used for remote plasma.
There is an attempt to add nitrous oxide (N 2 O) in order to reduce the amount of nitrogen oxide (N 2 O) used. However, because nitrous oxide which is not completely decomposed is also a warming gas, the cleaning process of adding oxygen or ozone is developed so that the cleaning rate is also increased and the amount of the nitrogen oxide Gas was needed to replace it.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, and it is an object of the present invention to provide a method for reducing fluorine-based gas used in a semiconductor wafer fabrication process wherein the cleaning efficiency can provide similar efficiency, And to provide a remote plasma cleaning apparatus and a cleaning method that can prevent environmental pollution.
In one embodiment of the present invention, oxygen is added to a nitrogen trifluoride remote plasma apparatus to supply energy to a thin film deposited with oxygen-active species (O, O 2 , O 3 ) generated by the plasma, Species accelerate detergency because of their strong oxidizing power. As a result, the cleaning power can be increased and the amount of NF3 used can be reduced.
In one embodiment of the present invention, nitrogen oxide (NO) gas is added together with oxygen to generate nitrogen oxide active species (Radical) in the plasma, thereby weakening the binding of nitrogen or oxygen atoms on the surface of the silicon oxide thin film, .
In one embodiment of the present invention, the remote plasma apparatus induces a plasma discharge with nitrogen or argon because it is difficult to generate plasma only with oxygen or nitrogen trifluoride.
A remote plasma cleaning apparatus according to the present invention includes: a semiconductor deposition chamber for performing a process in vacuum; A remote plasma device installed outside the semiconductor deposition chamber and connected to the semiconductor deposition chamber to maintain the same vacuum; Wherein the plasma power output frequency of the remote plasma apparatus varies from 200 KHz to 500 KHz according to an impedance; A nitrogen trifluoride supply connected to the gas inlet pipe connected to the remote plasma apparatus; A nitrogen supply unit connected to the gas inlet pipe connected to the remote plasma apparatus; And an oxygen supply connected to the gas inlet pipe connected to the remote plasma apparatus, wherein oxygen is added after the plasma discharge by the nitrogen supplied from the nitrogen supply unit.
Meanwhile, in the cleaning method using the above-described remote plasma cleaning apparatus, a plasma discharge is performed by nitrogen through a nitrogen supply unit; And adding oxygen or ozone after the plasma discharge, wherein oxygen or ozone is added to increase the cleaning rate by increasing the reactivity by supplying energy to the evaporation layer of the oxygen active species. The remote plasma cleaning apparatus according to claim 1, As shown in Fig.
According to the present invention, it is possible to reduce the generation of greenhouse gases and to improve the cleaning rate by proposing a method of increasing the cleaning rate while significantly reducing the amount of nitrogen oxides used in the cycle cleaning process of the semiconductor deposition reaction furnace There is an effect.
1 shows a remote plasma cleaning apparatus according to a first embodiment of the present invention,
2 shows a remote plasma cleaning apparatus according to a second embodiment of the present invention,
3 shows a remote plasma cleaning apparatus according to a third embodiment of the present invention,
4 is a flowchart illustrating a cleaning method using a remote plasma cleaning apparatus according to the first embodiment of the present invention.
FIG. 5 is a graph showing a change in cleaning rate when only a trifurane is used in a remote plasma cleaning apparatus according to the present invention,
6 is a graph showing a change in cleaning rate when only oxygen is added in a remote plasma cleaning apparatus according to the present invention,
7 is a flowchart illustrating a cleaning method using a remote plasma cleaning apparatus according to a second embodiment of the present invention,
8 is a flowchart illustrating a cleaning method using a remote plasma cleaning apparatus according to the first embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. It does not mean anything.
In addition, the sizes and shapes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, and the terms defined specifically in consideration of the configuration and operation of the present invention may vary depending on the intention or custom of the user, operator It should be noted that the definitions of these terms should be made on the basis of the contents throughout this specification.
FIG. 1 is a view showing a remote plasma cleaning apparatus according to a first embodiment of the present invention. FIG. 2 is a view showing a remote plasma cleaning apparatus according to a second embodiment of the present invention. FIG. 4 is a flow chart showing a cleaning method using a remote plasma cleaning apparatus according to the present invention. FIG. 5 is a view showing a remote plasma cleaning apparatus according to a third embodiment of the present invention. FIG. 6 is a graph showing a change in the cleaning rate when only oxygen is added in the remote plasma cleaning apparatus according to the present invention, FIG. 7 is a graph showing a change in the cleaning rate when the remotely plasma cleaning apparatus according to the second embodiment of the present invention FIG. 8 is a flowchart showing a cleaning method using a plasma cleaning apparatus according to the first embodiment of the present invention. FIG. A flow chart showing.
1 to 8, a remote plasma cleaning apparatus according to the present invention includes a
The
The
Therefore, nitrogen trifluoride, nitrogen, and oxygen are supplied from one side of the reactor and discharged in the reactor to discharge the plasma source.
The
The inlet of the ozone is placed at the outlet of the remote plasma device (4).
2, each of the gas inlet pipes L is connected to one side and the other side is connected to a buffer space part (not shown) formed to pass through the
Therefore, nitrogen trifluoride, nitrogen, and oxygen can be mixed in the
Meanwhile, the cleaning method using the remote plasma cleaning apparatus includes a first step (S1) in which a plasma discharge is performed by nitrogen through a nitrogen supply unit; (S2) of adding oxygen or ozone after the plasma discharge, and adding oxygen or ozone to increase the reactivity by supplying energy to the evaporation layer of the oxygen active species to reduce the use amount of the warming gas .
The first step S3 includes a step of introducing nitrogen (N2) or argon (Ar) into the
The output frequencies of the
The second step (S2) includes a 2-1 step of introducing nitrogen trifluoride after the success of the plasma discharge in the first step (S1).
And a 2-2 process of introducing oxygen when the plasma discharge is in a steady state after the 2-1 process.
Nitrogen oxides (NO) can be introduced together with the inflow of the nitrogen trifluoride.
The amount of oxygen to be introduced is preferably 50 parts by weight to 300 parts by weight based on 100 parts by weight of nitrogen trifluoride.
The second step (S2) includes a step of stopping the nitrogen or argon used for the plasma discharge.
Meanwhile, in the second step S2, the ozone flows through the ozone generator.
It is preferable that the amount of ozone introduced is 50 parts by weight to 300 parts by weight based on 100 parts by weight of nitrogen trifluoride.
Hereinafter, preferred embodiments of the present invention will be described.
[Example 1]
As shown in Fig. 4, in the cleaning method using the remote plasma cleaning apparatus,
S1) N 2 (nitrogen) or argon (Ar) is introduced into the
The output frequencies of the
S2) Whether the plasma is generated can be detected by using a photo sensor through the viewport of a remote reactor or by constructing a sensor circuit inside the power supply unit.
S3) When the plasma discharge is successful, nitrogen trifluoride is introduced.
S4) When the plasma discharge due to the introduction of nitrogen trifluoride is in a steady state, oxygen is introduced. Thereafter, the nitrogen or argon used for the discharge can be stopped.
The amount of oxygen introduced is from 50 parts by weight to 300 parts by weight based on 100 parts by weight of nitrogen trifluoride.
S5) The remote plasma is operated for a set time to perform dry cleaning inside the semiconductor chamber.
If the set time is not used, EPD (End Point Detector) is installed at the exhaust part of the semiconductor deposition chamber to monitor the
Decreasing the amount of nitrogen trifluoride lowers the cleaning rate, but it is possible to increase the cleaning rate by appropriately adding oxygen.
According to experiments,
When a silicon nitride (Si 3 N 4 ) thin film is used as a sample, as shown in FIG. 5,
When the amount of nitrogen trifluoride was reduced from 2,800 sccm to 1,400 sccm, the cleaning rate decreased from 1228 Å / min to 716 Å / min.
In this state, when the change in cleaning rate was measured while adding oxygen (O 2), the maximum was increased to 1820 Å / min (see FIG. 6).
It was found that the oxygen - activated species generated by the plasma enhanced the reactivity by supplying the energy to the thin film and contributed to the cleaning rate even by the oxidation reaction.
[Example 2]
As shown in Fig. 7, in the cleaning method using the remote plasma cleaning apparatus,
S1) N 2 (nitrogen) or argon (Ar) is introduced into the
The output frequencies of the
S2) Whether the plasma is generated can be detected by using a photo sensor through the viewport of a remote reactor or by constructing a sensor circuit inside the power supply unit.
S3) When the plasma discharge is successful, nitrogen trifluoride is introduced. When the plasma discharge due to the introduction of nitrogen trifluoride is in a steady state, ozone (O 3 ) is introduced.
S4), the flow of nitrogen or argon used in the discharge can be stopped.
At this time, the ozone is introduced through a separate ozone generator.
S5) The
If the set time is not used, EPD (End Point Detector) is installed at the exhaust part of the semiconductor deposition chamber to monitor the
[Example 3]
As shown in Fig. 8, in the cleaning method using the remote plasma cleaning apparatus,
S1) N 2 (nitrogen) or argon (Ar) is introduced into the
The output frequencies of the
S2) Whether the plasma is generated can be detected by using a photo sensor through the viewport of a remote reactor or by constructing a sensor circuit inside the power supply unit.
S3) When the plasma discharge is successful, nitrogen trifluoride is introduced.
When the plasma discharge due to the introduction of nitrogen trifluoride is in a steady state, oxygen is introduced.
The nitrogen or argon used for the subsequent discharge can be stopped.
S4) Nitrogen nitrogen (NO) is introduced together with nitrogen trifluoride influx.
S5) The
If the set time is not used, EPD (End Point Detector) is installed at the exhaust part of the semiconductor deposition chamber to monitor the
Although the present invention has been described in connection with the above-mentioned preferred embodiments, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the invention, It is obvious that the claims fall within the scope of the claims.
2: semiconductor deposition chamber 3: buffer space part
4: remote plasma device 5: vacuum pump
6: power supply device 22: stage
24: Connector 52: Nitrogen trifluoride supply
54: nitrogen supply part 56: oxygen supply part
Claims (11)
And a magnetic core disposed outside the reactor, wherein the magnetic core is supplied with electric power from a power supply unit, and is installed outside the semiconductor deposition chamber, and is connected to the semiconductor deposition chamber, Plasma devices;
A power supply for providing a plasma power output frequency of the remote plasma apparatus;
A nitrogen trifluoride supply connected to the gas inlet pipe connected to the remote plasma apparatus;
A nitrogen supply unit connected to the gas inlet pipe connected to the remote plasma apparatus;
And an oxygen supply connected to the gas inlet pipe connected to the remote plasma apparatus,
The oxygen supply part supplies oxygen or ozone,
Wherein each of the gas inlet pipes is connected to one side and the other side includes a buffer space part formed to communicate with the remote plasma apparatus,
Nitrogen, nitrogen and oxygen in the buffer space part to improve the uniformity of the mixed gas and to improve the plasma efficiency by the mixed gas,
Wherein an EPD (End Point Detector) is formed at an exhaust part of the semiconductor deposition chamber to monitor SiF 4.
Wherein the plasma power output frequency of the power supply device varies from 200 KHz to 500 KHz according to the impedance.
A first step in which a plasma discharge is performed by nitrogen through a nitrogen supply unit;
And adding oxygen or ozone after the plasma discharge,
Oxygen or ozone is added to increase the cleaning rate by improving the reactivity by supplying energy to the vapor deposition film of the oxygen active species,
In the first step,
And introducing nitrogen into the remote plasma apparatus to generate plasma, wherein the output frequencies of the remote plasma apparatus are 200 KHz and 500 KHz,
The second step includes a step of introducing nitrogen trifluoride after the plasma discharge in the first step,
When the plasma discharge is in a steady state, oxygen is introduced,
Introducing nitrogen oxide together with the influx of nitrogen trifluoride,
The amount of oxygen to be introduced is 50 parts by weight to 300 parts by weight based on 100 parts by weight of nitrogen trifluoride,
In the second step
Ozone is introduced through the ozone generator,
The amount of the introduced ozone is 50 parts by weight to 300 parts by weight based on 100 parts by weight of nitrogen trifluoride,
The remote plasma is operated for a set time to perform dry cleaning in the semiconductor chamber,
Wherein EPD (End Point Detector) formed on the exhaust part of the semiconductor deposition chamber monitors SiF 4 when no set time is used.
Wherein the step (2) includes a step of stopping the nitrogen used for the plasma discharge.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020150130342A KR101738524B1 (en) | 2015-09-15 | 2015-09-15 | Remote Plasma Cleaning Method and Cleaning Apparatus |
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| KR1020150130342A KR101738524B1 (en) | 2015-09-15 | 2015-09-15 | Remote Plasma Cleaning Method and Cleaning Apparatus |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005085956A (en) * | 2003-09-08 | 2005-03-31 | Mitsubishi Heavy Ind Ltd | Cleaning method and cvd apparatus |
| KR100655607B1 (en) * | 2006-05-24 | 2006-12-11 | 주식회사 아토 | Apparatus for cleaning of cvd chamber and method of cleaning the same |
| JP2015037134A (en) * | 2013-08-14 | 2015-02-23 | 大陽日酸株式会社 | Silicon carbide removal device and silicon carbide removal method |
| JP5686999B2 (en) * | 2000-01-31 | 2015-03-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Improved chamber cleaning method and apparatus |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5686999B2 (en) * | 2000-01-31 | 2015-03-18 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Improved chamber cleaning method and apparatus |
| JP2005085956A (en) * | 2003-09-08 | 2005-03-31 | Mitsubishi Heavy Ind Ltd | Cleaning method and cvd apparatus |
| KR100655607B1 (en) * | 2006-05-24 | 2006-12-11 | 주식회사 아토 | Apparatus for cleaning of cvd chamber and method of cleaning the same |
| JP2015037134A (en) * | 2013-08-14 | 2015-02-23 | 大陽日酸株式会社 | Silicon carbide removal device and silicon carbide removal method |
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