CN101764044B - Method for pretreating technical cavity of plasma device - Google Patents
Method for pretreating technical cavity of plasma device Download PDFInfo
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- CN101764044B CN101764044B CN2008102408679A CN200810240867A CN101764044B CN 101764044 B CN101764044 B CN 101764044B CN 2008102408679 A CN2008102408679 A CN 2008102408679A CN 200810240867 A CN200810240867 A CN 200810240867A CN 101764044 B CN101764044 B CN 101764044B
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Abstract
The invention relates to a method for pretreating a technical cavity of a plasma device, which is applied to the aluminous inner wall or the surface of an interior part of the technical cavity to form a protective layer. The invention comprises the steps of: carrying out fluorization on the inner wall and the surface of an interior part with plasma containing fluorine, and forming an aluminum fluorine compound barrier layer at the inner wall and the surface of an interior part. The aluminum fluorine compound formed by the invention has strong binding force with the inner wall of the technical cavity and the interior part, the size of the binding force of all parts is basically same, the corrosion resistance of the plasma is increased, particulate pollutant can be avoided or reduced, and compared with a spraying method, the invention has low cost and reduced manufacture difficulty.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of plasma device process cavity preprocess method.
Background technology
Dry etching machine, ion implantor and chemical vapor deposition (CVD) equipment are the visual plants that uses in the integrated circuit fabrication process.In above-mentioned equipment, will be that main process gas feeds in the process cavity with the halogen, through the ionization of driving source excitation process gas, form highdensity plasma, utilize this plasma that Semiconductor substrate in the process cavity or structure are processed; For example, in dry etch process, on Semiconductor substrate or structure, etch figure with plasma; In chemical vapor deposition method, form medium or metallic diaphragm with plasma ion assisted deposition; In ion implantation technology,, form doped region etc. through with the doping that realizes in the energetic plasma implanted semiconductor substrate substrate; In addition, after etching or the ion implantation technology, also divest photoresist layer with oxygen gas plasma.
Because the bombardment property of plasma and the corrosivity of process gas are utilizing plasma that Semiconductor substrate or structure are added man-hour, also make the process cavity inwall that is exposed to plasma atmosphere and internal part is corroded or by the adhering contaminant particle; The pollutant that the element falling that is corroded forms; And the adhering contaminant particle can bring pollution to the Semiconductor substrate or the structure of processing to adding; Form defective, and this defective causes semiconductor device failure sometimes, brings fatal influence to semiconductor device.For 12 o'clock equipment, driving source (for example radio frequency source) power is multiple with respect to 8 o'clock or 6 equipment constantly and increases progressively when special, and the plasma etching problem that causes thus is even more serious.How reducing this harmful effect, is one of subject matter that faces in the integrated circuit manufacturing.
Result of the above problems generally is to form corrosion resistant barrier layer as protective layer on plasma device process cavity inwall or internal part surface, for example on the inwall of exposed aluminium material and spray head, forms the barrier layer.
Existing a kind of method is to utilize the method for spraying on process cavity aluminum alloy material inwall or internal part, to form AlF
3The barrier layer is as protective layer.Yet, because the oxide on the inhomogeneities of aluminium material surface and aluminium material surface is to AlF
3Bond Strength of Coating has very big influence, can make coating be easy to fracture.Cause when utilizing process cavity to carry out Cement Composite Treated by Plasma, the aluminium material below further corrosion fracture place of reacting gas, even cause the material separation of coating and basic unit, finally possibly form the new pollutant sources of particle.
Existing another kind of method is to utilize the method for spraying on the aluminium alloy of process cavity inwall, to form Y
2O
3The barrier layer is as protective layer.Yet, the Y that this method forms
2O
3Have the defective that comes off equally, introduce metal impurities such as yttrium easily.
Summary of the invention
The present invention provides a kind of plasma device process cavity preprocess method, to solve protective layer and the relatively poor problem of process cavity inwall adhesion that existing method forms.
The pretreated method of a kind of plasma device process cavity provided by the invention is used for forming protective layer on the inwall that contains aluminium material or the internal part surface of said process cavity, comprising:
With containing fluoro plasma said inwall and internal part surface are carried out fluorination treatment, form aluminium fluorine compounds barrier layer at said inwall and internal part surface.
Optional, form the said step that contains fluoro plasma and comprise:
Fluoro-gas is fed in the plasma generator;
With fluoro-gas ionization, formation contains fluoro plasma in plasma generator;
The described fluoro plasma that contains is imported in the said process cavity.
Optional, form the said step that contains fluoro plasma and comprise:
Fluoro-gas is fed in the said process cavity;
Encourage the fluoro-gas ionization in the said process cavity, formation contains fluoro plasma.
Compared with prior art, technique scheme one of them have the following advantages at least:
Through process cavity inwall or internal part surface being carried out fluorination treatment with fluorine-containing plasma, by process cavity inwall and internal part aluminium is provided, by plasma the reactant fluorine is provided, form aluminium fluorine compounds barrier layer at said inwall and internal part surface; The reaction that both take place is the chemical reaction of isotropic, and the aluminium fluorine compounds of formation and said inwall and internal part adhesion are strong, and the adhesion size is basic identical everywhere; This adhesion does not receive the influence of said inwall and internal part surface configuration; Thereby the aluminium fluorine compounds barrier layer of formation can strengthen the resisting plasma corrosion ability as protective layer, avoids or reduces the particle contamination deposits yields;
In addition, this method forms the fluorine aluminium compound through fluorine-containing Cement Composite Treated by Plasma at process cavity inwall and internal part surface, and with respect to using spraying method, cost reduces, and manufacture difficulty descends;
In addition, technique scheme one of them have the following advantages at least:
Contain the driving source that method that fluoro plasma produces can depend on this process cavity through making in pretreated process cavity, excitation is passed into fluoro-gas ionization in the process cavity, produces plasma; Then, with this plasma process cavity inwall and internal part are carried out fluorination treatment; In this method, produce original position fluorination treatment after the plasma, technology is simple, be convenient to implement; And the aluminium fluorine compounds barrier layer thickness and the density uniformity that form are good, and adhesion property is high; Utilance to containing fluoro plasma is high; In addition, formation contains the technology of fluoro plasma and technology original position in same process cavity of fluorination treatment is carried out, and can avoid fluorine-containing plasma transport, and cost is lower, and can avoid introducing other pollutant.
Description of drawings
Fig. 1 carries out pretreated sketch map for the method article on plasma body device process cavity of using the first embodiment of the present invention.
Embodiment
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sketch map of expression structure can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the manufacturing process of semiconductor integrated circuit; Usually can use such as plasma equipment such as dry etching machine, plasma implanter and chemical vapor depsotition equipments, Semiconductor substrate or structure are carried out plasmas processing such as etching, ion injection and deposition.Yet,, make to be exposed to the process cavity inwall in the plasma atmosphere and the internal part surface often is corroded or the adhering contaminant particle because plasma has stronger bombardment property and corrosivity.Contaminant particle comes off and can drop on by the Semiconductor substrate of Cement Composite Treated by Plasma or body structure surface, forms defective.Based on this; The present invention proposes the pretreated method of a kind of technical cavity of plasma device; Be used for forming protective layer on the inwall that contains aluminium material or the internal part surface of process cavity; This protective layer and said inwall or internal part adhesion are stronger, can not be corroded when carrying out Cement Composite Treated by Plasma to protect said process cavity inwall or internal part.
The pretreated method of plasma device process cavity of the present invention comprises: with fluorine-containing plasma said inwall or internal part surface are carried out fluorination treatment, form aluminium fluorine compounds barrier layer at said inwall and internal part surface.
Wherein, process cavity inwall and internal part contain aluminium material, for example, have aluminum liner in the process cavity, and the reacting gas spray head is aluminium material or the like.Reactive aluminum through fluorine-containing plasma and said inside and internal part can generate the aluminium fluorine compounds, for example can be AlF
3
In addition, because the inwall and the internal part of process cavity can be exposed in the air unavoidably, thereby, can form Al on the inwall or the internal part surface of aluminium material
2O
3, contain fluoro plasma and said Al
2O
3Reaction generates the aluminium fluorine compounds too.Its reaction equation is following:
Al
2O
3(solid)+CF
x(free radical) → AlF
x(solid)+CO (gas)
In the above-mentioned reaction; By process cavity inwall and internal part aluminium is provided, by plasma the reactant fluorine is provided, the reaction that both take place is the chemical reaction of isotropic; Aluminium fluorine compounds that form and said inwall and internal part adhesion are strong, and the adhesion size is basic identical everywhere; This adhesion does not receive the influence of said inwall and internal part surface configuration.
Thereby said method forms aluminium fluorine compounds barrier layer as protective layer, can strengthen the resisting plasma corrosion ability, avoids or reduces the particle contamination deposits yields.In addition, this method forms the fluorine aluminium compound through fluorine-containing Cement Composite Treated by Plasma at process cavity inwall and internal part surface, and with respect to using spraying method, cost reduces, and manufacture difficulty descends.
Wherein, the ability to bear that technological parameters such as the temperature of reaction chamber and pressure can be through considering process cavity and internal part and be beneficial to aspects such as aluminium fluorine compounds generation and set.For example, when carrying out above-mentioned fluorination treatment, the temperature in the process cavity can be 50 ℃ to 70 ℃, and pressure can be 50mT to 150mT.
In addition, can form the fluoro plasma that contains in the above-mentioned fluorination treatment: contain fluoro plasma outside formation of said process cavity, contain in the fluoro plasma introducing technology chamber said then through following mode.For example, can fluoro-gas be fed in the plasma generator, through the said fluoro-gas of driving source ionization of plasma generator, formation contains fluoro plasma; And then described plasma is imported in the said process cavity through conduit.Then, technological parameters such as the temperature of the plasma in the adjusting process chamber, pressure carry out fluorination treatment to this process cavity inwall and internal part.
Wherein, The said fluoro plasma that contains is imported in the said process cavity multiple mode can be arranged; A kind of is with plasma introducing technology chamber by the process cavity top; The conduit output is connected with the inlet at said process cavity top, contains fluoro plasma and gets into said process cavity by said inlet, and diffuse to whole process cavity by the top of process cavity.
Another kind is that the bottom by process cavity will contain fluoro plasma introducing technology chamber, contains fluoro plasma and below process cavity, upwards spreads and be full of whole process cavity.In addition, a kind of in addition is will contain fluoro plasma introducing technology chamber by the process cavity side through the opening on the sidewall.
Because when using process cavity that Semiconductor substrate or structure are carried out Cement Composite Treated by Plasma, plasma is comparatively serious to process cavity below madial wall and bottom corrosion.The mode that will contain fluoro plasma introducing technology chamber by the bottom of process cavity; The madial wall of process cavity below and parts contact earlier contain fluoro plasma; So the aluminium fluorine compounds that form are thicker, can effectively protect the madial wall and the parts of process cavity below.
In addition, also can use above-mentioned any dual mode or three kinds of modes in process cavity, to import plasma simultaneously, the thickness on the aluminium fluorine compounds barrier layer of diverse location in the autotelic change process cavity, or form the uniform aluminium fluorine compounds of thickness barrier layer.
In addition, also can form the fluoro plasma that contains in the above-mentioned fluorination treatment through following mode: fluoro-gas is fed in the said process cavity, encourage the fluoro-gas in the said process cavity through driving source, formation contains fluoro plasma.Said driving source can be radio frequency source or microwave source or other high-octane energy source.Plasma density and concentration that this method forms are comparatively even, help forming thickness and the more consistent aluminium fluorine compounds barrier layer of density; And this method is high to the utilance that contains fluoro plasma; In addition, form the technology contain fluoro plasma and the technology of fluorination treatment in this mode and carry out, avoid fluorine-containing plasma transport in original position in same process cavity, thus simple to operate, and cost is lower, and can avoid introducing other pollutant.
In addition, said fluoro-gas can be a fluorocarbon, for example can be CF
4, C
2F
6Or C
4F
8In a kind of or the combination.
In addition, whether the terminal point of said fluorination treatment can be monitored by the accessory substance of fluorination treatment through the emission spectrometry monitoring.Whether for example, when carrying out fluorination treatment with fluorocarbon plasma, except that generating the aluminium fluorine compounds, also have accessory substance CO to produce, the spectrum that can monitor CO judges whether to be generated by CO, also continuing with the reaction of judging fluorination treatment.Certainly monitor other accessory substance, repeat no more here.
In addition, after the fluorination treatment, also comprise the step that said process cavity inwall and internal part are cleaned, to remove issuable particle in the fluorination treatment process.
Wherein, said cleaning comprises at least a in cleaning or clean with IPA with washed with de-ionized water or ultrasonic waves for cleaning or with hydrogen peroxide solution and ammoniacal liquor mixed solution.
Below in conjunction with embodiment the pretreated method of plasma device process cavity of the present invention is described in detail.Need to prove; Description to some details among the following embodiment only is schematic; It should not limit the protection range of claim improperly, and those skilled in the art can make corresponding modification, deletion and replacement under the situation that does not break away from spirit of the present invention and essence.
Embodiment one
Present embodiment is that example describes with the mode in " contain fluoro plasma outside formation of said process cavity, contain in the fluoro plasma introducing technology chamber said then ".
Please refer to Fig. 1, have liner 18 in the plasma device process cavity 16, said liner 18 is for aluminium material or contain aluminium material.Liner 18 is the inwall of said process cavity 16.Can also have aluminium material in said process cavity 16 inside or contain other parts of aluminium material, for example, aluminium base ring is pointed out here no longer one by one.This plasma device technique chamber 16 can also comprise other parts, for example, inlet duct, exhaust apparatus and workpiece chuck etc. are no longer enumerated here.
Before the plasma preliminary treatment is carried out in this plasma device technique chamber 16; At first the end with plasma conduit 14 is connected with the loam cake inlet of said process cavity 16; The other end of said plasma conduit 14 is connected with plasma generator 12, imports in the said process cavity 16 with the plasma that plasma generator 12 is produced.In addition, said plasma generator 12 also is connected with gas conduit 10, is used for transporting reacting gas to plasma generator 12.Certainly; The position of the end that said plasma conduit 14 is connected with process cavity is not limited to position shown in Figure 1; Also can be connected with this process cavity 16 in other position of said process cavity 16; Can at any possible position the two be connected according to the thickness of the rete that will form and the needs of density, make said plasma conduit 14 to import plasma to said process cavity.Here explanation no longer one by one, those skilled in the art can make corresponding change based on the instruction of embodiments of the invention.
Wherein, Said plasma generator 12 can be low pressure plasma generator, rf induction plasma generator etc.; Certainly; Can be the plasma generator of other type, enumerate no longer one by one that any plasma generator that contains fluoro plasma that can produce all can be applied in the method for the present invention here.
During work, fluoro-gas is imported in the said plasma generator 12 by said gas conduit 10, said fluoro-gas can be fluorine-containing carbon gas, for example can be CF
4, C
2F
6Or C
4F
8In a kind of or the combination.Present embodiment is with CF
4For example describes.Wherein, CF
4Flow be 500sccm to 1000sccm.
In said plasma generator 12, with said CF
4Be ionized into plasma, for example pass through the said CF of radio frequency source ionization of plasma generator 12
4Wherein, radio frequency source power is 300W, and frequency is 2MHz, and air pressure is 50mT to 200mT.Under the excitation of radio frequency source energy, CF
4Gas generation ionization, formation comprises CF
XThe plasma of free radical and F atom, as:
C
xF
y(gas) → CF
x(free radical)+F (atom)
The plasma that said plasma generator 12 is produced is by in the described plasma conduit 14 introducing technology chambeies 16.The temperature that process cavity is set is 50 ℃ to 70 ℃, and pressure is 50mT to 150mT, and fluorination reaction takes place for the free radical contained fluorine and the liner 18 that contain in the fluoro plasma, forms fluorine aluminium compound barrier layer, for example AlF on said liner 18 surfaces
3, promptly realize fluorination treatment.In addition and since liner 18 surfaces be exposed to external environment condition can be oxidized, so be formed with Al at liner 18
2O
3, contain fluoro plasma reality and mainly be and Al
2O
3Fluorination reaction takes place, and reacts as follows:
Al
2O
3(solid)+CF
x(free radical) → AlF
x(solid)+CO (gas)
Because said fluorination reaction is mainly isotropic chemical reaction, so can access thickness and the uniform relatively AlF of rete characteristic
3Rete.Wherein, the reaction time of fluorination treatment is about 5 to 20 hours, the AlF of formation
3Thicknesses of layers is about 2um to 5um.Can whether accomplish through the optical emitting spectroscopic detector detection reaction that configuration is used to detect some byproduct of reaction, just detect all Al in top layer
2O
3Whether all be converted into AlF
3For example, can detect the CO spectral line in the present embodiment, judge whether that CO produces in addition.
After treating that the fluorination treatment reaction is accomplished, can also the liner 18 of process cavity 16 be cleaned,, avoid causing secondary pollution, dry processing then to remove issuable particulate pollutant in above-mentioned fluorination treatment process.
Wherein, cleaning and oven dry can be adopted following steps: earlier with 2M Ω-cm pure water rinsing, use IPA (isopropyl alcohol) wiping again, then use the mixed liquid dipping of ammoniacal liquor and hydrogen peroxide solution again, and with the wiping of 3M dishcloth, use 18M Ω-cm deionized water rinsing again; The ultrasonic wave of putting into 25KHz then adds 18M Ω-cm deionized water and vibrates.Be placed at last in the baking oven, 80 ℃ were toasted 2 hours.
Aluminium fluorine compounds and said liner 18 adhesions of utilizing the technology of the foregoing description one to form are stronger, and the adhesion size is basic identical everywhere; This adhesion does not receive the influence of liner 18 surface configurations.Thereby the aluminium fluorine compounds barrier layer that said method forms can strengthen the resisting plasma corrosion ability as protective layer, avoids or reduces the particle contamination deposits yields.In addition, this method forms the fluorine aluminium compound through fluorine-containing Cement Composite Treated by Plasma on process cavity liner 18 surfaces, and with respect to using spraying method, cost reduces, and manufacture difficulty descends.
Yet the method for the foregoing description one is to contain fluoro plasma process cavity 16 outside formation earlier, unavoidably need be by external equipment, and for example plasma generator 12, comparatively inconvenience.Based on this, a kind of improved plan is also proposed, like following embodiment two.
Embodiment two
Contain fluoro plasma in the present embodiment and in the pretreated process cavity of needs, produce, depend on the driving source of this process cavity, excitation is passed into fluoro-gas ionization in the process cavity, produces plasma; Then, with this plasma process cavity inwall and internal part are carried out fluorination treatment.In this method, produce plasma original position fluorination treatment afterwards, technology is simple, is convenient to implement.And the aluminium fluorine compounds barrier layer thickness and the density uniformity that form are good, and adhesion property is high.
As concrete example, the fluoro-gas that is passed in the process cavity can be to be CF4, and flow is 500sccm to 1000sccm, can certainly be other fluorocarbon; Radio frequency source (driving source is a radio frequency source in this enforcement) power that process cavity is set is 300W to 1200W, and frequency is 2MHz; In addition, be provided with that temperature is 50 ℃ to 70 ℃ in the process cavity, pressure is 50mT to 150mT, forms to contain fluoro plasma and make plasma and process cavity inwall and internal part surface reaction generation aluminium fluorine compounds.
Wherein, the end point determination of the fluorination treatment in the present embodiment can be identical with the foregoing description one, also can be different, be not described in detail here.
In addition, after the fluorination treatment in the present embodiment, also cleaning can be arranged, this cleaning can be identical with the foregoing description one, also can be different, be not described in detail here.
The method of present embodiment is high to the utilance that contains fluoro plasma; In addition, form the technology contain fluoro plasma and the technology of fluorination treatment in this mode and carry out, avoid fluorine-containing plasma transport in original position in same process cavity, thus simple to operate, and cost is lower, and can avoid introducing other pollutant.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. the pretreated method of plasma device process cavity is used for not carrying out technology in process cavity and before the exposed inwall that contains aluminium material or the internal part surface of said process cavity is formed protective layer, it is characterized in that, comprising:
Fluorine-containing plasma diffusion to whole process cavity; With containing fluoro plasma said inwall and internal part surface are carried out fluorination treatment; To form aluminium fluorine compounds barrier layer at whole said inwall and internal part surface, the aluminium fluorine compounds of formation and the adhesion of said inwall and internal part are strong.
2. the pretreated method of plasma device process cavity as claimed in claim 1 is characterized in that, forms the said step that contains fluoro plasma and comprises:
Fluoro-gas is fed in the plasma generator;
With fluoro-gas ionization, formation contains fluoro plasma in plasma generator;
The described fluoro plasma that contains is imported in the said process cavity.
3. the pretreated method of plasma device process cavity as claimed in claim 2 is characterized in that: the mode that said plasma is imported said process cavity comprises a kind of in being imported, imported or imported by said technology side by said process cavity bottom by said process cavity top or any two kinds; Perhaps above-mentioned three kinds of modes are carried out simultaneously.
4. the pretreated method of plasma device process cavity as claimed in claim 1 is characterized in that, forms the said step that contains fluoro plasma and comprises:
Fluoro-gas is fed in the said process cavity;
Encourage the fluoro-gas ionization in the said process cavity, formation contains fluoro plasma.
5. like the pretreated method of the described plasma device process cavity of the arbitrary claim of claim 2 to 4, it is characterized in that: said fluoro-gas is a fluorocarbon.
6. the pretreated method of plasma device process cavity as claimed in claim 5, it is characterized in that: said fluorocarbon comprises CF
4, C
2F
6Or C
4F
8In a kind of or the combination.
7. like the pretreated method of the described plasma device process cavity of the arbitrary claim of claim 2 to 4, it is characterized in that: the temperature when carrying out said fluorination treatment in the process cavity is 50 ℃ to 70 ℃, and pressure is 50mT to 150mT.
8. like the pretreated method of the described plasma device process cavity of the arbitrary claim of claim 1 to 4, it is characterized in that: through whether having the accessory substance of fluorination treatment to produce the terminal point of monitoring fluorination treatment with the emission spectrometry monitoring.
9. like the pretreated method of the described plasma device process cavity of the arbitrary claim of claim 1 to 4, it is characterized in that, further comprise: after carrying out fluorination treatment, the surface of said process cavity inwall and internal part is cleaned.
10. the pretreated method of plasma device process cavity as claimed in claim 9 is characterized in that: said cleaning comprises at least a in cleaning or clean with IPA with washed with de-ionized water or ultrasonic waves for cleaning or with hydrogen peroxide solution and ammoniacal liquor mixed solution.
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| CN102002686A (en) * | 2010-11-02 | 2011-04-06 | 深圳市华星光电技术有限公司 | Chemical vapor deposition equipment and cooling tank thereof |
| CN102110596B (en) * | 2010-12-17 | 2013-04-10 | 无锡华润上华半导体有限公司 | Method for reducing wafer drop |
| CN102807327B (en) * | 2011-06-03 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing roughness of inner wall of nozzle of dry etching cavity |
| CN103290355B (en) * | 2012-02-14 | 2016-03-02 | 金文焕 | The cleaning method of the reactor chamber part of physical vapor deposition |
| CN104073775B (en) * | 2013-03-26 | 2019-05-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of the processing method and deposition film of pair of deposition film reaction chamber |
| CN105714270A (en) * | 2016-04-15 | 2016-06-29 | 信利（惠州）智能显示有限公司 | Cleaning finishing monitoring method and system thereof with chemical vapor deposition |
| CN107267957B (en) * | 2017-06-28 | 2020-02-07 | 武汉华星光电技术有限公司 | Device for chemical vapor deposition and chemical vapor deposition method |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 North Building microelectronics M5, 1 Jiuxianqiao East Road, Chaoyang District, Beijing. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |