KR101714778B1 - Solar cell module - Google Patents

Solar cell module Download PDF

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Publication number
KR101714778B1
KR101714778B1 KR1020150188490A KR20150188490A KR101714778B1 KR 101714778 B1 KR101714778 B1 KR 101714778B1 KR 1020150188490 A KR1020150188490 A KR 1020150188490A KR 20150188490 A KR20150188490 A KR 20150188490A KR 101714778 B1 KR101714778 B1 KR 101714778B1
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South Korea
Prior art keywords
conductive
metal layer
solar cell
insulating substrate
electrodes
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KR1020150188490A
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Korean (ko)
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문강석
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엘지전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The present invention relates to a solar cell module, comprising: a semiconductor substrate; a plurality of solar cells having different polarities on a rear surface of the semiconductor substrate, and having a plurality of first electrodes and a plurality of second electrodes, respectively, which are arranged in a first direction; a plurality of first conductive wirings overlapping the first electrodes and connected thereto and a plurality of second conductive wirings overlapping the second electrodes and connected thereto, each connected to each of the solar cells and arranged in a second direction crossing the first and second electrodes; and an interconnector arranged in the first direction between two first and second solar cells adjacent to each other among the solar cells, and connecting the first and second solar cells in series with each other. The interconnector includes an insulation substrate having elasticity, and a metal layer, which is patterned on the insulation substrate, and to which a plurality of first conductive wirings connected to the first solar cell and a plurality of second conductive wirings connected to the second solar cell are commonly connected.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells have a semiconductor portion that forms a p-n junction by different conductive types, such as p-type and n-type, and electrodes connected to semiconductor portions of different conductivity types, respectively.

When light is incident on such a solar cell, a plurality of electron-hole pairs are generated in the semiconductor portion, and the generated electron-hole pairs are separated into electrons and holes, respectively, so that the electrons move toward the n- Type semiconductor portion. The transferred electrons and holes are collected by different electrodes connected to the n-type semiconductor portion and the p-type semiconductor portion, respectively, and electric power is obtained by connecting these electrodes with electric wires.

On the other hand, in the case of a rear-facing solar cell in which all the electrodes of the solar cell are located on the rear surface of the solar cell, in order to connect the plurality of solar cells in series, the interconnector may be directly connected to the electrode of the solar cell, And connected to a plurality of leads connected to the electrodes.
However, in such a case, when the electrode of the solar cell is connected to the interconnector, or when the lead wire connected to the solar cell is connected to the interconnector, the shape of the interconnector may be deformed due to thermal deformation of the interconnector, The connection can not be formed smoothly, thereby causing defects of the solar cell module.

An object of the present invention is to provide a solar cell module.

A semiconductor substrate; A plurality of solar cells each having a plurality of first electrodes and a plurality of second electrodes which are arranged in a first direction and have different polarities on a surface of a semiconductor substrate; Each of which is connected to each of the plurality of solar cells and is arranged in a second direction crossing the plurality of first and second electrodes and connected to the plurality of first electrodes by a plurality of first conductive wires and a plurality of second A plurality of second conductive wirings superimposed and connected to the electrodes; And an interconnector disposed in a first direction between the two first and second solar cells adjacent to each other among the plurality of solar cells and serially connecting the first and second solar cells to each other, And a metal layer patterned on the insulating substrate and the insulating substrate and having a plurality of first conductive wirings connected to the first solar cell and a plurality of second conductive wirings connected to the second solar cell commonly connected.

Here, the thermal expansion coefficient of the insulating substrate may be between 0.1 and 3 times the thermal expansion coefficient of the first and second conductive wirings. For example, the first and second conductive wirings have a thermal expansion coefficient of 10 * 10 -6 / K to 20 * 10 -6 / K, and the thermal expansion coefficient of the insulating substrate is 1 * 10 -6 / K to 50 * 10 -6 / K. ≪ / RTI >

In addition, the insulating substrate may be formed of at least one material selected from the group consisting of polyimide or epoxy containing glass fibers. The thickness of such an insulating substrate may be between 150 [mu] m and 300 [mu] m.

The thermal expansion coefficient of the metal layer may be the same as the thermal expansion coefficient of the first and second conductive wirings.

Such a metal layer may include any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al).

The first and second conductive wirings may be formed by coating a core including any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) (Sn). ≪ / RTI >

The first and second conductive wirings may be connected to the metal layer of the interconnector through the first conductive adhesive agent.

Here, the first conductive adhesive may be located between the first conductive interconnection and the metal layer and between the second conductive interconnection and the metal layer in a plurality of regions.

The first conductive adhesive may be formed of at least one of a solder paste containing tin (Sn) or a conductive paste containing metal particles in an insulating resin.

Further, the melting point of the insulating substrate may be higher than the melting point of the first conductive adhesive agent. For example, the melting point of the first conductive adhesive may be between 138 ° C and 250 ° C.

In addition, the thickness of the metal layer may be smaller than the thickness of the insulating substrate or the first and second conductive wirings. For example, the thickness of the metal layer may be between 10um and 40um.

Further, the thickness of the first conductive adhesive agent may be larger than the thickness of the metal layer and smaller than the thickness of the insulating substrate. As an example, the thickness of the first conductive adhesive may be between 30 [mu] m and 100 [mu] m.

The interconnector may be disposed such that the insulating substrate faces the front surface of the solar cell module, and the metal layer is disposed to face the rear surface of the solar cell module, and may be connected to the first and second conductive wires in the metal layer.

The first conductive wiring is connected to the first electrode through a second conductive adhesive agent in each of the plurality of solar cells, the second electrode is insulated by the insulating layer, the second conductive wiring is separated from the first conductive wiring, The first electrode may be connected to the second electrode through a second conductive adhesive, and the first electrode may be insulated by an insulating layer.

The semiconductor substrate of each of the first and second solar cells is doped with an impurity of the first conductivity type and the first electrode is located on the rear surface of the semiconductor substrate and is doped with a second conductive impurity opposite to the first conductivity. And the second electrode is located on the rear surface of the semiconductor substrate and can be connected to the rear electric field portion in which the impurity of the first conductive type is doped at a higher concentration than the semiconductor substrate.

Here, the plurality of first electrodes and the plurality of second electrodes may be located on the rear surface of the semiconductor substrate.

According to another aspect of the present invention, there is provided a solar cell module comprising: a semiconductor substrate; a plurality of solar cells having a first electrode and a second electrode, the solar cells having different polarities on the rear surface of the semiconductor substrate, And a first electrode of the first solar cell and a second electrode of the second solar cell are arranged in a long direction in a second direction intersecting the first direction between two first and second solar cells adjacent to each other among the plurality of solar cells, Wherein the interconnector comprises an insulating substrate having elasticity and a metal layer patterned on the insulating substrate and having a first electrode of the first solar cell and a second electrode of the second solar cell connected in common, .

The solar cell module according to an exemplary embodiment of the present invention includes an insulating substrate having elasticity and a metal layer patterned on the insulating substrate so as to minimize deformation of the shape of the interconnector, have.

1 to 4 are views for explaining an example of a solar cell module according to a first embodiment of the present invention.
Fig. 5 is a view for explaining a first example of the interconnector in the solar cell module of the present invention shown in Fig. 1 in more detail.
FIG. 6 is a view for explaining a second example of the interconnector in the solar cell module of the present invention shown in FIG. 1. FIG.
Fig. 7 is a view for explaining a third example of the interconnector in the solar cell module of the present invention shown in Fig. 1;
8 is a view for explaining an example of a solar cell module according to a second embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Further, when a certain portion is formed as "whole" on another portion, it means not only that it is formed on the entire surface of the other portion but also that it is not formed on the edge portion.

Hereinafter, the front surface may be a surface of the semiconductor substrate 110 on which the direct light is incident, and the rear surface may be an opposite surface of the semiconductor substrate 110 on which the direct light is not incident, have.

1 to 4 are views for explaining an example of a solar cell module according to a first embodiment of the present invention.

Here, FIG. 1 is an example of a shape of the solar cell module viewed from the rear side.

1, the solar cell module according to the present invention may include a plurality of solar cells C1 and C2, a plurality of conductive wirings 200, and an interconnector 300.

Each of the plurality of solar cells C1 and C2 includes a plurality of first electrodes 141 formed to extend at least in a first direction x away from each other on a rear surface of the semiconductor substrate 110 and the semiconductor substrate 110, And a plurality of second electrodes 142.

The plurality of conductive wirings 200 are extended in a second direction y intersecting with the first direction x which is the longitudinal direction of the first and second electrodes 141 and 142, Lt; / RTI >

The plurality of conductive wirings 200 may include a plurality of first conductive wirings 210 connected to a plurality of first electrodes 141 and connected to the plurality of second electrodes 142 in a superposed manner, 2 conductive wirings 220 as shown in FIG.

More specifically, the first conductive wiring 210 is connected to the first electrode 141 provided in each solar cell through the second conductive adhesive 251, and the insulating layer 252 made of an insulating material, (Not shown).

The second conductive wiring 220 is connected to the second electrode 142 provided in each solar cell through the second conductive adhesive 251 and is electrically connected to the first electrode 141 ).

The plurality of conductive wirings 200 may include any one of two solar cells adjacent to each other among a plurality of solar cells, for example, a plurality of first electrodes 141 provided in the first solar cell C1, A plurality of second electrodes 142 provided in a single solar cell, for example, the second solar cell C2, may be electrically connected to each other in series via the interconnector 300.

More specifically, the interconnect 300 is located between the first solar cell C1 and the second solar cell C2, and may extend in the first direction x. For example, the interconnect 300 may be spaced apart from the semiconductor substrate 110 of the first solar cell C1 and the semiconductor substrate 110 of the second solar cell C2.

The first conductive interconnect 210 connected to the first electrode 141 of the first solar cell C1 and the second electrode 142 of the second solar cell C2 are connected to the interconnector 300, The connected second conductive wires 220 are connected in common so that the first and second solar cells C1 and C2 can be connected in series in the second direction y.

Meanwhile, in the present invention, the interconnect 300 may include an insulating substrate 300a having elasticity and a metal layer 300b patterned on the insulating substrate 300a.

A plurality of first conductive wirings 210 connected to the first solar cell C1 and a plurality of second conductive wirings 220 connected to the second solar cell C2 are connected in common to the metal layer 300b .

The inter connecter 300 having the metal layer 300b patterned on the elastic insulating insulating substrate 300a is formed by bonding the first and second conductive wires 200 to the interconnect 300 through the elasticity of the insulating substrate 300a. Even if the shape of the interconnector 300 is partially deformed due to the thermal expansion stress of the first and second conductive interconnections 200 during the process of connecting the interconnector 300 to the interconnector 300, A phenomenon in which the substrate 300 is deformed can be minimized.

The structure of the interconnector 300 according to the present invention will be described in more detail.

Each constituent part of the solar cell module will be described in more detail as follows.

FIG. 2 is a partial perspective view showing an example of a solar cell applied to FIG. 1, and FIG. 3 is a sectional view of the solar cell shown in FIG. 2 in a second direction (y).

2 and 3, an example of a solar cell according to the present invention includes an antireflection film 130, a semiconductor substrate 110, a tunnel layer 180, an emitter section 121, a rear electric section 172, a backside surface field (BSF), an intrinsic semiconductor layer 150, a passivation layer 190, a plurality of first electrodes 141, and a plurality of second electrodes 142.

Here, the antireflection film 130, the intrinsic semiconductor layer 150, the tunnel layer 180, and the passivation layer 190 may be omitted. However, since the efficiency of the solar cell is improved when provided, As an example.

The semiconductor substrate 110 may be formed of at least one of monocrystalline silicon and polycrystalline silicon containing an impurity of the first conductivity type. In one example, the semiconductor substrate 110 may be formed of a single crystal silicon wafer.

Here, the first conductivity type may be any one of n-type and p-type conductivity types.

When the semiconductor substrate 110 has a p-type conductivity type, impurity of a trivalent element such as boron (B), gallium, indium, or the like is doped in the semiconductor substrate 110. However, when the semiconductor substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be doped into the semiconductor substrate 110.

Hereinafter, a case where the first conductive type of the semiconductor substrate 110 is n-type will be described as an example.

A plurality of uneven portions 200P may be formed on the entire surface of the semiconductor substrate 110. Accordingly, the emitter section 121 located on the front surface of the semiconductor substrate 110 may also have a concave and convex (200P) surface.

Accordingly, the amount of light reflected from the front surface of the semiconductor substrate 110 decreases, and the amount of light incident into the semiconductor substrate 110 increases.

The antireflection film 130 is formed on the front surface of the semiconductor substrate 110 to minimize the reflection of light incident from the outside to the front surface of the semiconductor substrate 110. The antireflection film 130 is formed of an aluminum oxide film (AlOx), a silicon nitride film (SiNx) An oxide film (SiOx), and a silicon oxynitride film (SiOxNy).

The tunnel layer 180 is disposed in direct contact with the entire rear surface of the semiconductor substrate 110, and may include a dielectric material. Therefore, the tunnel layer 180 can pass carriers generated in the semiconductor substrate 110, as shown in FIGS.

The tunnel layer 180 may pass carriers generated in the semiconductor substrate 110 and passivate the back surface of the semiconductor substrate 110.

In addition, the tunnel layer 180 may be formed of a dielectric material formed of SiCx or SiOx having high durability even at a high temperature process of 600 DEG C or more.

The emitter layer 121 is disposed on the rear surface of the semiconductor substrate 110. For example, a plurality of the emitter layers 121 are arranged in a first direction (x) so as to be in direct contact with a part of the rear surface of the tunnel layer 180, Type emitter layer 121 may be formed of a polycrystalline silicon material having a second conductivity type opposite to that of the emitter layer 121. The emitter layer 121 may form a pn junction with the semiconductor substrate 110 via the tunnel layer 180. [

Since each emitter section 121 forms a p-n junction with the semiconductor substrate 110, the emitter section 121 can have a p-type conductivity type. However, unlike the example of the present invention, when the semiconductor substrate 110 has the p-type conductivity type, the emitter portion 121 has the n-type conductivity type. In this case, the separated electrons move toward the plurality of emitter portions 121 and the separated holes can move toward the plurality of rear electric fields 172.

When the plurality of emitter sections 121 have a p-type conductivity type, the emitter section 121 can be doped with an impurity of a trivalent element. Conversely, when the plurality of emitter sections 121 have an n-type conductivity type , The emitter portion 121 may be doped with an impurity of a pentavalent element.

The rear electric field portion 172 is disposed on the rear surface of the semiconductor substrate 110 and is in direct contact with a part of the rear surface of the tunnel layer 180 which is spaced apart from each of the plurality of emitter portions 121, May be formed to be long in a first direction (x) side by side with the emitter part (121).

The rear electric field portion 172 may be formed of a polycrystalline silicon material doped with impurities of the first conductivity type at a higher concentration than the semiconductor substrate 110. Thus, for example, when the substrate is doped with an n-type impurity, the plurality of backside electrical paths 172 may be n + impurity regions.

The rear electric field 172 disturbs the hole movement toward the rear electric field 172, which is the movement direction of the electrons, due to the potential barrier due to the difference in impurity concentration between the semiconductor substrate 110 and the rear electric field 172, (E. G., Electrons) to the backside electrical < / RTI >

Thus, by reducing the amount of charge lost due to recombination of electrons and holes in the rear electric field 172 and in the vicinity thereof or at the first and second electrodes 142, 141 and 142 and accelerating electron movement, 172 can be increased.

2 and 3, the case where the emitter portion and the rear electric field portion are formed of a polycrystalline silicon material on the rear surface of the tunnel layer has been described as an example. Alternatively, when the tunnel layer is omitted, 110 may be diffused and doped. In this case, the emitter portion and the rear surface electric portion may be formed of the same single-crystal silicon material as the semiconductor substrate 110.

The intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer exposed between the emitter portion and the rear electric portion and the intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer, The impurity of the first conductivity type or the impurity of the second conductivity type may be formed of an intrinsic polycrystalline silicon layer not doped.

2 and 3, each of the opposite side surfaces of the intrinsic semiconductor layer 150 may have a structure in which the side surfaces of the emitter layer 121 and the side surfaces of the rear electric section 172 are in direct contact with each other.

The passivation layer 190 is formed by removing a defect caused by a dangling bond formed on the rear surface of the polycrystalline silicon layer formed on the rear electric field portion 172, the intrinsic semiconductor layer 150, and the emitter portion 121 , And to prevent the carriers generated from the semiconductor substrate 110 from being recombined by a dangling bond and disappearing.

The plurality of first electrodes 141 may be connected to the emitter section and extend in the first direction (x). The first electrode 141 may collect carriers, for example, holes, which have migrated toward the emitter section 121.

The plurality of second electrodes 142 may be formed to extend in the first direction (x) in parallel with the first electrode 141, connected to the rear electric field portion. As such, the second electrode 142 may collect carriers, e.g., electrons, that have migrated toward the rear electric section 172.

1, each of the first and second electrodes 141 and 142 may be extended in a first direction x, and the first electrode 141 and the second electrode 142 may be formed to extend in the first direction x, May be alternately arranged in the second direction (y).

The holes collected through the first electrode 141 and the electrons collected through the second electrode 142 in the solar cell according to the present invention are used as electric power of the external device through the external circuit device .

The solar cell applied to the solar cell module according to the present invention is not necessarily limited to only FIGS. 2 and 3, and the first and second electrodes 141 and 142 provided on the solar cell are formed only on the rear surface of the semiconductor substrate 110 Other components can be changed at any time.

For example, in the solar cell module of the present invention, a part of the first electrode 141 and the emitter part 121 are located on the front surface of the semiconductor substrate 110, and a part of the first electrode 141 is formed on the semiconductor substrate 110 The MWT type solar cell connected to the remaining part of the first electrode 141 formed on the rear surface of the semiconductor substrate 110 through the formed hole is also applicable.

The cross-sectional structure in which the solar cell is connected in series using the conductive wiring 200 and the interconnector 300 as shown in FIG. 1 is as shown in FIG.

Fig. 4 shows a cross section taken along the line X1-X1 in Fig. 1. Fig.

As shown in FIG. 4, a plurality of solar cells including the first solar cell C1 and the second solar cell C2 may be arranged in the second direction (y).

At this time, the longitudinal direction of the first and second electrodes 141 and 142 provided in the first and second solar cells C1 and C2 may be oriented in the first direction x.

The first and second solar cells C1 and C2 are connected to the first and second conductive wires 200 and the first and second solar cells C1 and C2 in a state in which the first and second solar cells C1 and C2 are arranged in the second direction y. The connector 300 can form one string which is elongated in the second direction y and connected in series.

Here, the first and second conductive wirings 200 may be formed of a conductive metal material. More specifically, the first and second conductive wirings 200 include a core including any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) (Sn) or tin (Sn).

The plurality of first and second conductive wirings 200 may have a conductive wire shape having a circular section or a ribbon shape having a width larger than the thickness.

Here, the line width of each of the first and second conductive wirings 200 can be formed to be between 0.5 mm and 2.5 mm while keeping the line resistance of the conductive wiring sufficiently low while minimizing the manufacturing cost. The gap between the first conductive wiring 210 and the second conductive wiring 220 may be formed to be between 4 mm and 6.5 mm in order to prevent the short circuit current of the solar cell module from being damaged in consideration of the total number of the conductive wiring 200.

The first and second conductive wirings 200 may be connected to the rear surface of the semiconductor substrate 110 of each solar cell.

More specifically, the plurality of first conductive wirings 210 are connected to the plurality of first electrodes 141 provided in each of the plurality of solar cells C1 and C2 via the second conductive adhesive 251, And may be insulated from the plurality of second electrodes 142 by an insulating layer 252 made of a material.

The plurality of second conductive wirings 220 are connected to the plurality of second electrodes 142 provided in each of the plurality of solar cells C1 and C2 through the second conductive adhesive 251, The first electrodes 141 may be insulated from each other by the insulating layer 252 of the first electrode 141.

Here, the second conductive adhesive 251 may be formed of a metal material including an alloy containing tin (Sn) or tin (Sn). The second conductive adhesive 251 may be formed in the form of a solder paste including an alloy containing tin (Sn) or tin (Sn), or may be formed of tin (Sn) or tin Sn), or an epoxy solder paste or a conductive paste (solder paste).

The insulating layer 252 may be any insulating material. For example, an insulating material such as epoxy, polyimide, polyethylene, acrylic, or silicone may be used.

4, the first and second conductive wirings 200 connected to the respective semiconductor substrates 110 for series connection of solar cells are connected to the interconnectors 300 As shown in Fig.

1 and 4, each of the plurality of first conductive wirings 210 includes a plurality of first semiconductor wirings 210 disposed on the side of the interconnector 300 disposed between the first and second solar cells C1 and C2, (Not shown).

1 and 4, each of the plurality of second conductive wirings 220 includes a plurality of first conductive wirings 220 disposed on the semiconductor substrate 110, respectively.

As described above, a portion of the plurality of first conductive wirings 210 and the plurality of second conductive wirings 220, which are connected to the rear surface of each solar cell, protruding out of each semiconductor substrate 110 is shown in Figs. 1 and 4 The plurality of solar cells C1 and C2 can be connected in common to the rear surface of the interconnector 300 disposed between the first and second solar cells C1 and C2, lt; RTI ID = 0.0 > (y). < / RTI >

4, the first and second conductive wirings 200 are bonded to the interconnector 300 through the first conductive adhesive agent 350 at a portion overlapping the interconnector 300. In other words, .

The first conductive adhesive agent 350 for bonding the first and second conductive wires 200 and the interconnector 300 to each other is made of a metal material including an alloy containing tin (Sn) or tin (Sn) .

The first conductive adhesive 350 may be formed of (1) a solder paste including an alloy containing tin (Sn) or tin (Sn), or (2) Sn or tin (Sn), or may be formed in the form of an electrically conductive paste (conductive paste).

The first conductive adhesive agent 350 for bonding the first and second conductive wires 200 and the interconnector 300 to each other is formed by bonding the first and second conductive wires 200 and the first and second electrodes 141 and 142 Or may be formed of the same material as that of the second conductive adhesive 251 or may be formed of another material.

The first conductive adhesive agent 350 for bonding the first and second conductive wires 200 and the interconnector 300 to each other may be formed of a solder paste containing tin (Sn) and the second conductive adhesive agent 251 for connecting the first and second conductive wires 200 and the first and second electrodes 141 and 142 may be formed of tin Sn or tin Sn), or an epoxy solder paste or a conductive paste (e.g., a conductive paste).

4, the interconnect 300 may include an elastic insulating substrate 300a and a metal layer 300b patterned on the insulating substrate 300a.

Here, the insulating substrate 300a may include an elastic insulating material. For example, the insulating substrate 300a may include at least one material selected from the group consisting of epoxy containing polyimide or glass fiber.

In addition, the metal layer 300b to be patterned on the insulating substrate 300a may include any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al).

The interconnector 300 is disposed such that the insulating substrate 300a faces the front surface of the solar cell module and the metal layer 300b is disposed on the rear surface of the solar cell module. , And the two conductive wirings (200).

Since the solar cell module having such a structure has a separate interconnect 300, it is possible to connect the first and second conductive wirings 200 and the first and second electrodes 141 and 142 among a plurality of solar cells The connection between the interconnector 300 and the plurality of first and second conductive wirings 200 is released so that the solar cell can be replaced more easily.

In addition, due to the elasticity of the insulating substrate 300a, the interconnector 300 can minimize the deformation of the interconnector 300 during the process of connecting the first and second conductive interconnections 200 to the interconnector 300 have.

The first and second conductive wirings 200 may be connected to the inter connecter 300 so that the first and second conductive wirings 200 and 300 are electrically connected to each other. The first and second conductive wirings 200 may be thermally expanded during the process of connecting the first and second conductive wirings 200 to the interconnector 300. The first and second conductive wirings 200 may be thermally expanded, Can be deformed into a zigzag shape.

In addition, in order to minimize the deformation of the interconnector 300, when the width and thickness of the interconnector 300 made of only metal are increased, due to the thermal expansion stress generated in the first and second conductive interconnects 200 , The first and second conductive wirings 200 may be bent or disconnected from the interconnector 300.

However, in the present invention, the interconnector 300 may be formed of an elastic insulating substrate 300a and a metal layer 300b to minimize the deformation of the interconnector 300, and the shape of the interconnector 300 The entire shape of the interconnector 300 can be restored to its original state due to the elasticity of the insulating substrate 300a, thereby minimizing defects in the solar cell module.

Hereinafter, the interconnector 300 in which the metal layer 300b is patterned on the insulating substrate 300a will be described in more detail as follows.

FIG. 5 is a view for explaining a first example of the interconnector 300 in the solar cell module of the present invention shown in FIG. 1, and FIG. 6 is a view for explaining a second example of the interconnector 300 Fig.

5 (a) is a rear view of a portion where the interconnector 300 is located in the solar cell module shown in FIG. 1 to explain the rear surface shape of the interconnector 300, and FIG. 5 (b 5B is a cross-sectional view taken along line 5b-5b in FIG. 5 (a).

5A, in the interconnector 300 according to the present invention, the insulating substrate 300a may be extended in the first direction x and the metal layer 300b may extend in the first direction x, (x).

5A, the first conductive wiring 210 connected to the first solar cell C1 and the second conductive wiring 220 connected to the second solar cell C2 are electrically connected to each other The first and second conductive wirings 210 and 220 may be staggered over the metal layer 300b while proceeding in the second direction y of the interconnection 300. In addition, To the metal layer 300b.

The first conductive adhesive 350 may be spaced apart from the first conductive wiring 210 to the metal layer 300b and between the second conductive wiring 220 and the metal layer 300b.

5A, the first conductive adhesive 350 located between the first conductive wiring 210 and the metal layer 300b is divided into a plurality of regions, for example, three point regions And the first conductive adhesive 350 located between the second conductive wiring 220 and the metal layer 300b may be spaced apart from the first conductive wiring 350 by three points.

As described above, when the metal layer 300b of the interconnector 300 and the first and second conductive wirings 200 are connected to each other through the first conductive adhesive agent 350, the first conductive adhesive agent 350 is divided into a plurality of point regions The first conductive adhesive agent 350 is melted by the heat treatment process so that the first conductive adhesive agent 350 and the first and second conductive wires 200 are heated to a hot spot points of the metal layer 300b and the first and second conductive wirings 200 can be dispersed, so that the thermal expansion stress of the metal layer 300b and the first and second conductive wirings 200 can be further relaxed.

5 (b), the first and second conductive wirings 200 are connected to the first and second conductive wirings 200 through the first and second conductive wirings 200, Thermal expansion may occur in the longitudinal direction (y) of the two-conductive wirings 200, so that thermal expansion stress may occur in the second direction (y).

As described above, in order to maximally absorb the thermal expansion stress of the first and second conductive wirings 200 to the metal layer 300b during the process of connecting the first and second conductive wirings 200 to the interconnect 300, The thermal expansion coefficient of the first and second conductive wirings 200 can be set to be between 0.1 and 2 times the thermal expansion coefficient of the first and second conductive wirings 200. Preferably, It can be made equal to the thermal expansion coefficient.

In order to make the thermal expansion coefficient of the first and second conductive wirings 200 and the metal layer 300b equal to each other, the material of the metal layer 300b is set to be the same as the material of the first and second conductive wirings 200 can do. For example, copper (Cu) can be used as the core in the first and second conductive wirings 200, and the metal layer 300b can also be formed using copper (Cu).

In addition, the thermal expansion coefficient of the insulating substrate 300a may be between 0.1 times and 3 times the thermal expansion coefficient of the first and second conductive wirings 200. [

Thus, the thermal expansion stress of the first and second conductive wirings 200 is set to be in the range of 0.1 to 3 times the thermal expansion coefficient of the first and second conductive wirings 200, 300b to the insulating substrate 300a and gradually absorbed and absorbed. This can prevent the interconnect 300 from being deformed or the first and second conductive wirings 200 from being bent.

After the heat treatment process for connecting the first and second conductive wirings 200 to the interconnect 300 has been completed, the first and second conductive wirings 200 and 300b, which have been thermally expanded, are electrically connected to the first and second conductive wirings 200 and the metal layer 300b can be shrunk again while cooling.

At this time, due to the restoring force of the elastic insulating substrate 300a, the first and second conductive wirings 200 and the metal layer 300b can naturally contract again, The thermal expansion stress that has occurred in the heat sink 300b can be naturally solved.

For example, the thermal expansion coefficient of the first and second conductive wirings 200 and 300b may be between 10 * 10 -6 / K and 20 * 10 -6 / K, and the coefficient of thermal expansion of the insulating substrate 300a May be formed between 1 * 10 -6 / K and 50 * 10 -6 / K.

At this time, the thickness T300b of the metal layer 300b may be smaller than the thickness T300a of the insulating substrate 300a. In addition, in order to absorb the thermal expansion stress of the first and second conductive wirings 200 as much as possible, May be smaller than the thickness T210 of the first and second conductive wirings 200. [

For example, the thickness T210 of the first and second conductive wirings 200 may be between 50um and 300um, the thickness T300b of the metal layer 300b may be between 10um and 40um, (T300a) may be formed to be between 150 [mu] m and 300 [mu] m.

In addition, even if the thermal expansion coefficients of the first and second conductive wirings 200 and 300b are the same, the first and second conductive wirings 200 and 300 may be bonded together during the heat treatment process for connecting the first and second conductive wirings 200 to the inter- The difference between the thermal expansion length of the first and second conductive wirings 200 and the thermal expansion length of the metal layer 300b, as shown in Fig. 5 (b) A difference may occur.

In such a case, the first conductive adhesive agent 350 may be applied to the first and second conductive wires 200 during the heat treatment process for connecting the first and second conductive wires 200 to the interconnector 300, as shown in FIG. 5 (b) The thermal expansion lengths of the first and second conductive wirings 200 and the metal layer 300b of the interconnection 300 spread out in the thermal expansion longitudinal direction of the first and second conductive wirings 200 between the wiring 200 and the metal layer 300b of the inter- The thermal expansion stress due to the difference in the thermal expansion length of the heat dissipating members 300a and 300b can be relaxed.

The thickness T350 of the first conductive adhesive 350 is greater than the thickness T300b of the metal layer 300b in order to alleviate the thermal expansion stress generated between the first and second conductive interconnections 200 and the metal layer 300b May be smaller than the thickness T300a of the insulating substrate 300a.

For example, the thickness T350 of the first conductive adhesive 350 may be between 30 um and 100 um in a range larger than the thickness T300b of the metal layer 300b.

In order to maintain the shape and elasticity of the insulating substrate 300a of the interconnector 300 during the process of connecting the first and second conductive interconnections 200 to the interconnector 300, The melting point may be higher than the melting point of the first conductive adhesive agent 350.

For example, the melting point of the first conductive adhesive agent 350 may be between 138 ° C and 250 ° C, and the melting point of the insulating substrate 300a may be higher than the melting point of the first conductive adhesive agent 350, Lt; RTI ID = 0.0 > 200 C < / RTI > However, the present invention is not limited thereto, and the melting point of the insulating substrate 300a may be 350 DEG C or higher.

5A and 5B illustrate a case where the end of the metal layer 300b patterned on the insulating substrate 300a of the interconnector 300 is spaced apart from the end of the insulating substrate 300a by a predetermined distance The positions of the ends of the metal layer 300b and the ends of the insulating substrate 300a may be the same.

6, in a portion where the first conductive wiring 210 and the insulating substrate 300a are overlapped with each other or a portion where the second conductive wiring 220 and the insulating substrate 300a overlap each other, 300b and the end of the insulating substrate 300a are the same as those of the first conductive wiring 210 and the second conductive wiring 220 and the portion opposite to the overlapping portion of the first conductive wiring 210 and the insulating substrate 300a, The end of the metal layer 300b may be spaced apart from the end of the insulating substrate 300a by D in the portion opposite to the portion where the metal layer 300a is overlapped.

The first and second conductive wirings 200 (for example, the second conductive wirings of the first and second solar batteries C1 and C2) may be removed during the heat treatment process for connecting the first and second conductive wirings 200 to the interconnector 300. [ The first conductive wiring 210 of the second solar cell C2 can be prevented from being short-circuited with the metal layer 300b of the interconnector 300 even if the wiring 220 or the first conductive wiring 210 of the second solar cell C2 is thermally expanded.

5 and 6, the width of the insulating substrate 300a is constant in the first direction x in the interconnector 300. However, in the first direction x, The width of the metal layer 300a and the width of the metal layer 300b may be changed.

The width of the insulating substrate 300a and the width of the metal layer 300b may increase or decrease while moving in the first direction x at the interconnector 300. The distance between the insulating substrate 300a and the metal layer 300b, The pattern of increasing or decreasing the width may be repeated.

In the interconnect 300, a slit-shaped hole may be formed in the insulating substrate 300a and the metal layer 300b. For example, a slit-shaped hole may be formed in the same portion of the insulating substrate 300a and the metal layer 300b in the interconnector 300. The slit-shaped holes may be formed in the first and second conductive wirings 210 and 220 The thermal expansion of the insulating substrate 300a and the metal layer 300b can be alleviated. Further, in the insulating substrate 300a of the interconnector 300 according to the present invention, And a front surface facing the front surface may be formed with a concavo-convex structure for reflecting light incident on the interconnector 300 and allowing light to be incident on the adjacent solar cell. This will be described in more detail as follows.

FIG. 7 is a view for explaining a third example of the interconnector 300. FIG.

As shown in FIG. 7, a plurality of irregularities may be formed on the front surface of the insulating substrate 300a in the interconnector 300, and a light reflecting layer 300C having a high light reflectance may be further provided on the plurality of irregularities .

As described above, the solar cell module according to the present invention includes the interconnector 300 that can relieve the thermal expansion stress of the first and second conductive wirings 200 during the process of connecting the first and second conductive wirings 200 to the interconnector 300, The deformation of the interconnector 300 can be minimized and the defect of the solar cell module due to the deformation of the interconnector 300 can be prevented.

1 to 7 illustrate the case where the first and second electrodes 141 and 142 provided in each solar cell are located only on the rear surface of the semiconductor substrate 110. Alternatively, The present invention is also applicable to a conventional solar cell in which the first electrode 141 of the first electrode 141 is located on the front surface of the semiconductor substrate 110 and the second electrode 142 is located on the rear surface of the semiconductor substrate 110.

The plurality of first conductive wirings 210 are connected to the first electrode 141 positioned on the front surface of the semiconductor substrate 110 and the plurality of second conductive wirings 220 are connected to the first electrode 141 disposed on the front surface of the semiconductor substrate 110. In this case, And may be connected to the second electrode 142 located on the rear side.

The interconnect 300 is formed of an elastic insulating substrate 300a and a metal layer 300b patterned on the insulating substrate 300a and the metal layer 300b of the interconnector 300, A plurality of first conductive wirings 210 connected to the first solar cell C1 and a plurality of the second conductive wirings 220 connected to the second solar cell C2 can be connected in common.

Alternatively, the inter connecter 300 according to the present invention may be connected to the first and second electrodes 141 and 142 of each solar cell without using the first and second conductive wires 210 and 220 as described above . This will be described in more detail as follows.

8 is a view for explaining an example of a solar cell module according to a second embodiment of the present invention.

FIG. 8A is a rear view of a solar cell module according to a second embodiment of the present invention, and FIG. 8B is a cross-sectional view taken along the line X 2 -X 2 in FIG. will be.

The solar cell used in FIG. 8 (a) may have the same structure as the solar cell described in FIGS. 2 and 3.

However, the patterns of the first and second electrodes 141 and 142 formed on the rear surface of the semiconductor substrate 110 may be different from each other as shown in FIG. 8 (a) for connection to the interconnector 300.

That is, in each solar cell, the plurality of first electrodes 141 may be disposed closer to one side of the semiconductor substrate 110, and the plurality of second electrodes 142 may be disposed adjacent to one side of the semiconductor substrate 110 And may be disposed more adjacent to the side.

Accordingly, when connecting the interconnector 300 to the rear surface of the semiconductor substrate 110 to connect the solar cells in series, it is possible to more easily prevent the interconnector 300 from shorting to an unwanted electrode.

The patterns of the first and second electrodes 141 and 142 provided on the rear surface of the semiconductor substrate 110 may be modified as shown in FIG. For example, the second bus bar may include a first bus bar to which a plurality of first electrodes 141 are commonly connected and a second bus bar to which a plurality of second electrodes 142 are commonly connected.

Here, the interconnect 300 is disposed between the two adjacent first and second solar cells in a second direction (y) that intersects the first direction (x) The first electrode 141 of the first solar cell C1 and the second electrode 142 of the second solar cell C2 may be connected in series to each other through the first conductive adhesive agent 350. [

Here, the first conductive adhesive agent 350 may be formed of the same material as described above.

The interconnector 300 according to the present invention may be configured such that separate first and second conductive wirings 210 and 220 are provided as shown in Figures 8A and 8B when a plurality of solar cells are connected in series The first and second electrodes 141 and 142 may be connected to the metal layer 300b of the interconnector 300 through the first conductive adhesive agent 350. [

As described above, the interconnect 300 according to the present invention may include an elastic insulating substrate 300a and a metal layer 300b patterned on the insulating substrate 300a.

Therefore, the inter connecter 300 according to the present invention has the shape of the interconnector 300 during the process of connecting the first and second electrodes 141 and 142 to the interconnector 300 due to the elasticity of the insulating substrate 300a. It is possible to minimize the defects of the solar cell module during the manufacturing process and thus to further improve the process yield. Although the preferred embodiments of the present invention have been described in detail above, The scope of the present invention is not limited to the scope of the present invention, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.

Claims (22)

A semiconductor substrate; A plurality of solar cells each having a plurality of first electrodes and a plurality of second electrodes arranged in a first direction and having different polarities on a surface of the semiconductor substrate;
A plurality of first conductive wirings, each of which is connected to each of the plurality of solar cells and is arranged in a second direction crossing the plurality of first and second electrodes, the plurality of first conductive wirings being overlapped and connected to the plurality of first electrodes; A plurality of second conductive wirings connected in superposition with the plurality of second electrodes; And
And an inter connecter disposed between the first and second solar cells adjacent to each other of the plurality of solar cells in the first direction and serially connecting the first and second solar cells to each other,
Wherein the interconnector has an elastic insulating substrate and a plurality of second conductive wirings patterned on the insulating substrate and the plurality of first conductive wirings connected to the first solar cell and the plurality of second conductive wirings connected to the second solar cell are common And a metal layer,
Each of the insulating substrate and the metal layer is spaced apart from each of the semiconductor substrates provided in the first and second solar cells,
And an end of the metal layer is located inside the end of the insulating substrate. The method according to claim 1,
Wherein the thermal expansion coefficient of the insulating substrate is between 0.1 and 3 times the thermal expansion coefficient of the first and second conductive wirings. 3. The method of claim 2,
Wherein the first and second conductive wirings have thermal expansion coefficients between 10 * 10 -6 / K and 20 * 10 -6 / K,
And the thermal expansion coefficient of the insulating substrate is between 1 * 10 -6 / K and 50 * 10 -6 / K. The method according to claim 1,
Wherein the insulating substrate comprises at least one material selected from the group consisting of polyimide or epoxy containing glass fibers. The method according to claim 1,
Wherein the thickness of the insulating substrate is between 150 [mu] m and 300 [mu] m. 3. The method of claim 2,
And the thermal expansion coefficient of the metal layer is equal to the thermal expansion coefficient of the first and second conductive wirings. The method according to claim 1,
Wherein the metal layer comprises any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al). The method according to claim 1,
Wherein the first and second conductive wirings include a core including any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) And a coating layer containing an alloy including Sn. The method according to claim 1,
Wherein the first and second conductive wirings are connected to the metal layer of the interconnector through a first conductive adhesive. 10. The method of claim 9,
Wherein the first conductive adhesive is located between the first conductive wiring and the metal layer and is spaced apart from the second conductive wiring and the metal layer. 10. The method of claim 9,
Wherein the first conductive adhesive is formed of at least one of a solder paste containing tin (Sn) or a conductive paste containing metal particles in an insulating resin. 10. The method of claim 9,
Wherein the melting point of the insulating substrate is higher than the melting point of the first conductive adhesive. 10. The method of claim 9,
Wherein the melting point of the first conductive adhesive is between 138 ° C and 250 ° C. The method according to claim 1,
Wherein the thickness of the metal layer is smaller than the thickness of the insulating substrate or the first and second conductive wirings. 15. The method of claim 14,
Wherein the thickness of the metal layer is between 10 [mu] m and 40 [mu] m. 10. The method of claim 9,
Wherein the thickness of the first conductive adhesive is larger than the thickness of the metal layer and smaller than the thickness of the insulating substrate. 10. The method of claim 9,
Wherein the thickness of the first conductive adhesive is between 30 um and 100 um. The method according to claim 1,
Wherein the interconnector is disposed such that the insulating substrate faces the front surface of the solar cell module, the metal layer is disposed to face the rear surface of the solar cell module, and the metal layer is connected to the first and second conductive wires, module. The method according to claim 1,
Wherein the first conductive wiring is connected to the first electrode through a second conductive adhesive in each of the plurality of solar cells, the second electrode is insulated by an insulating layer,
The second conductive wiring is spaced apart from the first conductive wiring and connected to the second electrode through the second conductive adhesive, and the first electrode is insulated by the insulating layer. 20. The method of claim 19,
The semiconductor substrate of each of the first and second solar cells is doped with an impurity of the first conductivity type,
The first electrode is connected to an emitter portion located on the rear surface of the semiconductor substrate and doped with a second conductive impurity opposite to the first conductivity
Wherein the second electrode is disposed on a rear surface of the semiconductor substrate and connected to a rear electric field portion doped with impurities of the first conductive type at a high concentration than the semiconductor substrate. The method according to claim 1,
Wherein the plurality of first electrodes and the plurality of second electrodes are located on a rear surface of the semiconductor substrate. delete
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KR20180104505A (en) * 2017-03-13 2018-09-21 엘지전자 주식회사 solar cell and solar cell module
KR20190014880A (en) * 2017-08-04 2019-02-13 엘지전자 주식회사 Solar cell panel
EP4125137A1 (en) * 2021-07-28 2023-02-01 Meyer Burger (Switzerland) AG Solar cell module

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KR20150092621A (en) * 2014-02-05 2015-08-13 엘지전자 주식회사 Interconnector and solar cell module with the same
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KR20140003691A (en) * 2012-06-22 2014-01-10 엘지전자 주식회사 Solar cell module and ribbon assembly
KR20150092621A (en) * 2014-02-05 2015-08-13 엘지전자 주식회사 Interconnector and solar cell module with the same
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KR20180104505A (en) * 2017-03-13 2018-09-21 엘지전자 주식회사 solar cell and solar cell module
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