KR101711892B1 - Plastic injection resin composition having excellent thermal conductivity and LED package using it - Google Patents

Plastic injection resin composition having excellent thermal conductivity and LED package using it

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KR101711892B1
KR101711892B1 KR1020160137532A KR20160137532A KR101711892B1 KR 101711892 B1 KR101711892 B1 KR 101711892B1 KR 1020160137532 A KR1020160137532 A KR 1020160137532A KR 20160137532 A KR20160137532 A KR 20160137532A KR 101711892 B1 KR101711892 B1 KR 101711892B1
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led
thermal conductivity
plastic injection
injection resin
resin composition
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KR1020160137532A
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Korean (ko)
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최민섭
손종락
황상원
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주식회사 파인테크닉스
주식회사 동부엘이디
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/02—Fibres or whiskers
    • C08K7/04—Fibres or whiskers inorganic
    • C08K7/14—Glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The present invention relates to a plastic injection resin composition having excellent thermal conductivity and forming a plastic injection resin which has significantly improved thermal conductivity compared to an existing injection resin and forms the improved appearance of an LED package, and to an LED packing applying the same. The plastic injection resin composition having excellent thermal conductivity is formed by mixing 6-12 parts by weight of a thermal conductive filler with respect to 100 parts by weight of a polymer resin containing glass fiber and titanium dioxide (TiO_2) with a fixed quantity.

Description

열전도율이 우수한 플라스틱 사출수지 조성물 및 이를 적용한 LED패키지{Plastic injection resin composition having excellent thermal conductivity and LED package using it}[0001] The present invention relates to a plastic injection resin composition having excellent thermal conductivity and an LED package using the same,

본 발명은 열전도율이 우수한 플라스틱 사출수지 조성물 및 이를 적용한 LED패키지에 관한 것으로, 보다 상세하게는 기존 사출수지 대비 열전도율을 획기적으로 개선된 LED패키지의 외형을 구성하는 플라스틱 사출수지를 성형하는 플라스틱 사출수지 조성물 및 이를 적용한 LED패키지에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plastic injection resin composition having an excellent thermal conductivity and an LED package using the same. More particularly, the present invention relates to a plastic injection resin composition for molding a plastic injection resin constituting an outer shape of an LED package And an LED package using the same.

기존 가정용 조명, TV 및 전장용의 발광 소재로써, 저전력 소모 및 우수한 광 효율을 보이는 발광다이오드(LED; Light Emitting Diode)는 차세대 광원을 대체할 주자로 많은 각광을 받고 있다. 이러한 고효율의 LED에 대한 다양한 응용을 위하여 출력이 증가됨에 따라 발열 등의 이슈를 해결하기 위해 많은 기술이 도입되고 있다. Light emitting diodes (LEDs), which exhibit low power consumption and excellent optical efficiency as light emitting materials for existing household lighting, TV and electric field, are attracting much attention as a substitute for next generation light sources. As the output increases for various applications of such high efficiency LEDs, many technologies are being introduced to solve problems such as heat generation.

현재 LED칩 구동으로 발생하는 열에 의한 광 손실 및 수명저하를 유발하는 방열 기술을 개선하기 위하여 방열판의 증가 및 방열 소재의 열용량 개선 등이 다양하게 진행되고 있으나, LED패키지(LED Package)의 사이즈(Size) 증가 또는 소재 개선의 한계로 LED 소재의 발열을 효과적으로 방열하지 못하여 고출력 LED생산이 제한되고 있는 실정이다. 또한 별도의 히트싱크(Heat Sink)를 적용하여 LED제조 비용 상승의 원인이 되기도 한다. In order to improve the heat dissipation technology that causes the loss of light due to heat generated by driving the LED chip and the lifetime of the LED chip, an increase of the heat dissipation plate and improvement of the heat capacity of the heat dissipation material have been variously performed. However, ) Or the limitation of material improvement, heat generation of LED materials can not be effectively dissipated, and production of high output LEDs is limited. In addition, a separate heat sink may be applied to increase the manufacturing cost of the LED.

종래의 고출력 LED를 구현하기 위하여 칩(Chip)에서 발생하는 열을 효율적으로 방열하는 다양한 방법이 하기와 같은 방식으로 구현되었다. 칩의 발열을 해결하기 위하여 방열판을 확장하거나, 메탈 기판층을 기형적으로 크게(예, COB)하는 등의 구조적 변경을 시도하는 방식을 적용하고 있다. Various methods for efficiently dissipating heat generated from a chip to implement a conventional high-power LED have been implemented in the following manner. In order to solve the heat generation of the chip, a method of expanding the heat sink or attempting structural modification such as deforming the metal substrate layer abnormally (for example, COB) is applied.

또한, 래터럴칩(Lateral Chip)의 경우 고 열용량의 증착층(Adhesion Layer)을 적용하거나, 칩 하단부에 반사메탈 형성 후 메탈 증착(Adhesion)으로 구성하는 방식을 적용하였다. 칩에서 발생하는 열이 사파이어층으로 집중되는 것을 해결하기 위하여 사파이어층을 바꾸는 수직 칩구조 또는 플립칩(Flip Chip)구조 등을 적용하여 발열을 해결하기도 하였다. 하지만, 리드프레임타입(Lead Frame Type) LED패키지 또한 고출력량으로 진행되면서 발열에 대한 해결이 필요하나, 래터럴칩의 기본 구조에 리드(Lead)에만 의존하는 등 방열 기술에 제한적이었다. In addition, in the case of a lateral chip, a method of applying a high heat capacity deposition layer (Adhesion layer) or forming a reflective metal on the bottom of a chip is adopted. In order to solve the problem that the heat generated in the chip is concentrated on the sapphire layer, a vertical chip structure for changing the sapphire layer or a flip chip structure is used to solve the heat generation. However, the lead frame type LED package is also required to solve heat generation with high output, but it was limited to the heat dissipation technology such as relying on the lead in the basic structure of the lateral chip.

1. 대한민국공개특허공보 제10-2009-0088134호1. Korean Patent Publication No. 10-2009-0088134 2. 대한민국공개특허공보 제10-2011-0003706호2. Korean Patent Publication No. 10-2011-0003706 3. 대한민국공개특허공보 제10-2013-0063108호3. Korean Patent Publication No. 10-2013-0063108 4. 대한민국공개특허공보 제10-2016-0089891호4. Korean Patent Publication No. 10-2016-0089891

본 발명에서는 LED Package Size 및 제한된 방열소재로 인한 고출력 LED 제작을 효율적으로 개선하기 위하여 방열판 외에 지지기판으로의 방열을 확대하여 LED Size 확대 및 추가 비용을 최소화하여 방열이 우수한 고출력 LED 를 구현하고자 하였다.In the present invention, in order to efficiently improve the LED package size and the high output LED due to the limited heat dissipation material, the heat dissipation to the support substrate is enlarged in addition to the heat dissipation plate to minimize the enlargement of the LED size and the additional cost.

이를 해결하기 위하여, 본 발명에서는 LED패키지를 구성하는 플라스틱 사출수지를 형성함에 있어 열전도율이 1W/mK이하의 기존 사출대비 열전도성이 우수한 열전도성 필러를 첨가하여 열전도율이 1W/mK이상으로 개선되면서 광 효율 또한 개선된 우수한 열전도율 및 광반사 특성을 가지는 플라스틱 사출수지 조성물을 제공하는 것을 그 해결과제로 한다. In order to solve this problem, in the present invention, in forming a plastic injection resin constituting an LED package, a thermally conductive filler having a thermal conductivity of 1 W / mK or less and excellent thermal conductivity is added to improve thermal conductivity of 1 W / It is an object of the present invention to provide a plastic injection resin composition having improved efficiency and excellent thermal conductivity and light reflection property.

또한, 본 발명에서는 열전도율이 개선된 플라스틱 사출수지를 적용하여 LED패키지의 외형(이하, '몰드'라 한다)을 구성함으로써 LED패키지의 우수한 방열성을 확보하고, 광반사 특성이 향상된 경제성 있고 외관이 우수한 LED패키지를 제공하는 것을 다른 해결과제로 한다. In addition, in the present invention, an outer shape (hereinafter, referred to as a "mold") of an LED package is formed by applying a plastic injection resin having improved thermal conductivity to secure an excellent heat radiation property of an LED package, Another challenge is to provide an LED package.

상기한 과제를 해결한 본 발명의 열전도율이 우수한 플라스틱 사출수지 조성물은 유리섬유(Glass Fiber)와 이산화티타늄(TiO2)를 일정량 함유하는 고분자 수지 100중량부에 대하여, 열전도성 필러 6~12중량부를 혼합하여 이루어지는 것을 특징으로 한다. The plastic injection resin composition having excellent thermal conductivity of the present invention which solves the above problems is prepared by mixing 6 to 12 parts by weight of a thermally conductive filler with 100 parts by weight of a polymer resin containing a certain amount of glass fiber and titanium dioxide (TiO2) .

여기서, 상기 고분자수지는 폴리프탈아마이드(Polyphthalamide; PPA), 열가소성 폴리에스터 엔지니어링 수지(Thermiplastic Polyester Engineering Resins; PCT 수지)로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 한다. Here, the polymer resin may be any one selected from the group consisting of polyphthalamide (PPA) and thermoplastic polyester engineering resin (PCT resin).

여기서, 상기 열전도성 필러는 입자크기 1~100㎛의 크기를 가지는 알루미늄(Al), 티타늄(Ti), 크로뮴(Cr), 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 아연(Zn), 납(Pd), 은(Ag), 카드뮴(Cd), 백금(Pt), 금(Au), 텅스텐(W)으로 이루어진 군에서 선택되는 어느 하나 이상의 메탈파우더(Metal Powder)인 것을 특징으로 한다. The thermally conductive filler may be at least one selected from the group consisting of aluminum (Al), titanium (Ti), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni) ), At least one metal powder selected from the group consisting of zinc (Zn), lead (Pd), silver (Ag), cadmium (Cd), platinum (Pt), gold (Au), and tungsten ).

여기서, 상기 열전도성 필러는 입자크기 1~100㎛ 크기의 그라핀(Graphine) 또는 탄소나노튜브(CNT)인 것을 특징으로 한다. Here, the thermally conductive filler may be graphine or carbon nanotube (CNT) having a particle size of 1 to 100 mu m.

또한, 본 발명에서는 상기 열전도율이 우수한 플라스틱 사출수지 조성물을 적용한 몰드를 포함하여 구성되는 LED패키지를 제공한다. In addition, the present invention provides an LED package including a mold to which a plastic injection resin composition having excellent thermal conductivity is applied.

또한, 본 발명에서는 상기 열전도율이 우수한 플라스틱 사출수지 조성물이 적용된 몰드를 포함하는 LED패키지로 구성된 조명기구를 제공한다.In addition, the present invention provides a lighting apparatus comprising an LED package including a mold to which a plastic injection resin composition having excellent thermal conductivity is applied.

본 발명에서 제공되는 열전도율이 우수한 플라스틱 사출수지 조성물을 적용함으로써 방열판 외에 지지기판으로의 방열을 확대하여 LED Package Size 및 제한된 방열소재로 인한 고출력 LED 제작을 효율적으로 개선하고, LED Size 확대 및 추가 비용을 최소화하여 방열이 우수한 고출력 LED를 구현할 수 있는 효과가 있다.By applying the plastic injection resin composition having excellent thermal conductivity provided by the present invention, heat dissipation to the support substrate in addition to the heat dissipation plate is expanded to efficiently improve the high output LED production due to the LED package size and the limited heat dissipation material. So that it is possible to realize a high output LED having excellent heat dissipation.

도 1 은 본 발명의 열전도율이 우수한 플라스틱 사출수지 조성물을 적용한 LED패키지의 기본구조를 도시한 것이다.
도 2 는 본 발명의 열전도율이 우수한 플라스틱 사출수지 조성물을 적용한 LED패키지의 다른 실시형태의 변형구조를 도시한 것이다. 1 shows a basic structure of an LED package to which a plastic injection resin composition having excellent thermal conductivity of the present invention is applied.
Fig. 2 shows a modified structure of another embodiment of the LED package to which the plastic injection resin composition having excellent thermal conductivity of the present invention is applied.

이하, 본 발명을 보다 상세히 설명하기로 한다. Hereinafter, the present invention will be described in more detail.

본 발명에서는 LED Package Size 및 제한된 방열소재로 인한 고출력 LED 제작을 효율적으로 개선하기 위하여 방열판 외에 지지기판으로의 방열을 확대하여 LED Size 확대 및 추가 비용을 최소화하여 방열이 우수한 고출력 LED를 구현하기 위해 안출한 것이다. In the present invention, in order to efficiently improve the LED package size and the high output LED due to the limited heat dissipation material, the heat dissipation to the support substrate is enlarged in addition to the heat dissipation plate to minimize the increase in the LED size and the additional cost, It is.

방열 효율을 개선해야 하는 Lead Frame Type LED는 플라스틱 사출 수지로 외형을 구성하고 있다. 플라스틱 사출 수지는 LED 제품 기준, 전극으로 분리된 금속재질의 Lead 단자를 연결하며, R, G, B 각 파장의 반사율을 극대화하여 광 효율을 개선하고자, 주로 Glass Fiber, TiO2 및 Base 수지 등으로 구성되어 있다. 하지만, 기본 구성인 Polymer 재질의 성분으로 인하여 방열에 기여하는 바는 미미하였다. 이에 본 발명의 발명자들은 열전도도가 기존 사출수지 대비 열전도성 필러로 Metal Powder를 수지대비 일정량 첨가하여 열전도율이 개선되고 (1W/mK 이상) 동시에 광반사율이 우수한 플라스틱 수지를 적용하여 방열 효과 및 광반사율을 개선하고자 본 발명을 완성하였다. The lead frame type LED which needs to improve the heat dissipation efficiency is composed of plastic injection resin. Plastic injection resin is mainly composed of glass fiber, TiO2 and base resin to improve the light efficiency by maximizing the reflectance of each wavelength of R, G, . However, due to the composition of the polymer, which is the basic constituent, the contribution to the heat radiation is small. Accordingly, the inventors of the present invention have found that by applying a certain amount of metal powder to a resin as a thermally conductive filler compared to a conventional injection resin, the thermal conductivity is improved (at least 1 W / mK) The present invention has been completed.

본 발명에 따른 열전도율이 우수한 플라스틱 사출수지 조성물은 유리섬유(Glass Fiber)와 이산화티타늄(TiO2)를 일정량 함유하는 고분자 수지 100중량부에 대하여, 열전도성 필러 3~15중량부를 혼합하여 이루어지는 것에 그 기술적 특징이 있으며, 보다 바람직한 실시형태로 상기 열전도 필러의 혼합량은 6~12중량부인 것이 더욱 좋다. The plastic injection resin composition having excellent thermal conductivity according to the present invention is obtained by mixing 3 to 15 parts by weight of a thermally conductive filler with 100 parts by weight of a polymer resin containing a certain amount of glass fiber and titanium dioxide (TiO2) In a more preferred embodiment, the mixing amount of the heat conductive filler is more preferably 6 to 12 parts by weight.

만일, 상기 열전도성 필러의 함량이 6중량부 미만일 경우에는 반사율은 90%이상 확보가 가능하나, 열전도율이 본발명이 목적하는 1W/mK 이하가 되는 단점이 있고, 15중량부를 초과할 경우에는 10W/mK이상의 우수한 열전도율을 가지나 반사율이 85%이하가 되어 광반사율이 낮아지는 단점이 있다.If the content of the thermally conductive filler is less than 6 parts by weight, the reflectance can be maintained at 90% or more. However, the thermal conductivity is 1 W / mK or less, which is the target of the present invention. / mK, but has a reflectance of less than 85%, which results in a lower light reflectance.

상기 고분자 수지에 함유된 유리섬유와 이산화티타늄은 수지의 강성 증가 및 백색도를 높이기 위한 것으로, 그 함량은 특별히 한정하는 것은 아니며, 본 발명을 저해하지 않는 범위내에서 통상 LED패키지용 사출수지에 적용되는 함량이 적용되어 혼합된 통상의 고분자 수지를 사용하였다. 바람직하게는 상기 고분자 수지 총량에 대하여 유리섬유 5 ~ 30중량%, 이산화티타늄 5 ~ 50중량%를 포함하는 수지를 적용하는 것이 좋다.The glass fiber and titanium dioxide contained in the polymer resin are for increasing the stiffness and whiteness of the resin, and the content thereof is not particularly limited. The glass fiber and the titanium dioxide are generally used in an injection resin for an LED package And a conventional polymer resin to which a content was applied and mixed was used. It is preferable to apply a resin containing 5 to 30% by weight of glass fiber and 5 to 50% by weight of titanium dioxide to the total amount of the polymer resin.

본 발명에 따르면, 상기 고분자수지는 폴리프탈아마이드(Polyphthalamide; PPA), 열가소성 폴리에스터 엔지니어링 수지(Thermiplastic Polyester Engineering Resins; PCT 수지)로 이루어진 군에서 선택되는 어느 하나를 사용한다. According to the present invention, the polymer resin may be selected from the group consisting of polyphthalamide (PPA) and thermoplastic polyester engineering resin (PCT resin).

본 발명에 따르면, 바람직하게 상기 열전도성 필러는 입자크기 1~100㎛의 크기를 가지는 것으로, 알루미늄(Al), 티타늄(Ti), 크로뮴(Cr), 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 아연(Zn), 납(Pd), 은(Ag), 카드뮴(Cd), 백금(Pt), 금(Au), 텅스텐(W)으로 이루어진 군에서 선택되는 어느 하나 이상의 메탈파우더(Metal Powder)를 사용한다. 보다 바람직하게는 상기 메탈파우더의 입자크기는 1~100㎛, 더욱 좋게는 2~50㎛의 입자크기를 가지는 것을 사용하는 것이 바람직하다. 만일, 상기 메탈파우더의 입자크기가 1㎛미만 또는 100㎛를 초과할 경우 제품 구현을 위한 사출시 유동성을 저해할 단점이 있다. According to the present invention, preferably, the thermally conductive filler has a particle size of 1 to 100 μm and is made of aluminum (Al), titanium (Ti), chromium (Cr), iron (Fe), cobalt (Ni), copper (Cu), zinc (Zn), lead (Pd), silver (Ag), cadmium (Cd), platinum (Pt), gold (Au), and tungsten Use one or more metal powders. More preferably, the metal powder has a particle size of 1 to 100 μm, more preferably 2 to 50 μm. If the particle size of the metal powder is less than 1 탆 or more than 100 탆, the flowability is deteriorated during injection for product realization.

본 발명에 따르면, 상기 열전도성 필러는 입자크기 1~100㎛ 크기의 그라핀(Graphine) 또는 탄소나노튜브(CNT)를 사용할 수 있다. 보다 바람직하게는 상기 입자크기는 2~50㎛의 입자크기를 가지는 것을 사용하는 것이 좋다. 만일, 그 입자크기가 1㎛미만 또는 100㎛를 초과할 경우 제품 구현을 위한 사출시 유동성을 저해할 단점이 있다.According to the present invention, the thermally conductive filler can use graphine or carbon nanotube (CNT) having a particle size of 1 to 100 μm. More preferably, the particle size is preferably 2 to 50 mu m. If the particle size is less than 1 占 퐉 or more than 100 占 퐉, there is a disadvantage that it impedes fluidity at the time of injection for product realization.

본 발명에 따르면, 상기 조성물에 선택적으로 내흡수성수지, 산화방지제, 광 안정제, 이형제, 가소제, 핵형성제, 안료, 가교제, 형광증백제 등을 더 첨가하거나, 개질을 하는 것도 가능하다.According to the present invention, it is also possible to further add or modify a water absorbent resin, an antioxidant, a light stabilizer, a releasing agent, a plasticizer, a nucleating agent, a pigment, a crosslinking agent and a fluorescent brightener to the composition.

이하, 본 발명의 플라스틱 사출수지 조성물을 적용한 일 예로서 일 구현예에 따른 LED패키지를 도 1 및 2를 참고하여 설명한다. Hereinafter, an LED package according to one embodiment will be described with reference to FIGS. 1 and 2 as an example of applying the plastic injection resin composition of the present invention.

도 1 은 본 발명의 플라스틱 사출수지 조성물이 적용된 LED패키지의 기본 구조로, LED패키지(100)는 상기 플라스틱 사출수지 조성물을 사용하여 사출하여 형성되어 외관을 구성하는 몰드(110); 상기 몰드(110)내에 배치되는 리드 프레임 등의 도전층(120, 130); 상기 도전층(130)상에 실장되어 배치되는 LED칩(140); 상기 리드프레임(120, 130)과 LED칩을 연결하는 본딩와이어(150); LED칩을 덮고 있는 봉지재(160)로 구성된다. 이때, 상기 도전층(120)과 도전층(130)의 사이에 사출수지가 배치되어 형성된다. FIG. 1 shows a basic structure of an LED package to which the plastic injection resin composition of the present invention is applied. The LED package 100 includes a mold 110 which is formed by injection using the plastic injection resin composition and constitutes an outer appearance; Conductive layers 120 and 130 such as lead frames disposed in the mold 110; An LED chip 140 mounted on the conductive layer 130; A bonding wire 150 connecting the lead frames 120 and 130 to the LED chip; And an encapsulant 160 covering the LED chip. At this time, an injection resin is disposed between the conductive layer 120 and the conductive layer 130.

상기 몰드(110)는 본 발명의 사출수지 조성물이 적용된 것으로 열전도율이 1W/mK이상이고, 반사율이 90%이상을 가지게 됨으로써, 열전도 효율 뿐만 아니라 광반사율이 매우 우수한 물성을 확보하게 된다. 이때, 상기 몰드는 생산자의 목적 또는 요구되는 열전도율 및 반사율에 따라 상기 사출수지를 열전도율이 1W/mK 이상이고, 반사율이 90% 이상을 갖는 고분자수지를 적용하거나, 또는 열전도율이 2W/mK 이상이고, 반사율이 90% 이상을 갖는 고분자수지를 적의 선택하여 적용할 수 있는 것이다. 그에 따라 고효율 및 고방열의 LED패키지를 제공할 수 있는 것이다. The mold 110 has a thermal conductivity of 1 W / mK or more and a reflectance of 90% or more to which the injection resin composition of the present invention is applied, thereby ensuring not only the heat conduction efficiency but also the optical reflectivity. In this case, the injection resin may be a polymer resin having a thermal conductivity of 1 W / mK or more and a reflectance of 90% or more, or a thermal conductivity of 2 W / mK or more, depending on the purpose of the producer or the required thermal conductivity and reflectance, A polymer resin having a reflectance of 90% or more can be selected and applied. Accordingly, it is possible to provide a highly efficient and highly heat-dissipating LED package.

도 2의 (a) 및 (b)는 본 발명의 플라스틱 사출수지가 적용된 몰드의 구성과 리드프레임의 구성의 변형된 구조를 도시한 것으로, 이에 한정하지 않고, LED패키지의 구조는 다양하게 변형하여 구성될 수 있는 것이다. 2 (a) and 2 (b) show the structure of the mold to which the plastic injection resin of the present invention is applied and the modified structure of the structure of the lead frame, but the present invention is not limited thereto. .

도 1 및 2는 리드프레임타입 LED패키지의 일예로, 이외에도 플립칩(Filp Chip) 타입 LED패키지 또는 버티컬칩(Vertical Chip) 타입 LED패키지 등에도 적용가능하다.FIGS. 1 and 2 are examples of a lead frame type LED package, and are also applicable to a flip chip type LED package or a vertical chip type LED package.

바람직하게 상기 몰드(110)를 형성하는 플라스틱 사출수지의 열전도율을 개선하기 위하여 열전도성 필러가 특정부위에 집중되어 통전되는 것을 방지하기 위하여 리드프레임과 몰드사이에 절연층을 구성하여 분리될 수 있다. Preferably, in order to improve the thermal conductivity of the plastic injection resin forming the mold 110, an insulating layer may be formed between the lead frame and the mold in order to prevent the thermally conductive filler from being concentrated on a specific region and energized.

이상과 같은 본 발명의 열전도율이 우수한 플라스틱 사출수지 조성물이 적용된 몰드를 포함하는 LED패키지는 다양한 LED조명기구에 사용되어질 수 있는 것이다. The LED package including the mold to which the plastic injection resin composition having the excellent thermal conductivity of the present invention is applied can be used in various LED lighting fixtures.

이하, 본 발명을 바람직한 실시예를 들어 보다 상세히 설명하기로 한다. 단 하기의 실시예는 본 발명을 설명하기 위한 예시로서 하기 실시예로 본 발명을 한정하는 것은 아니며, 본 발명의 범위를 벗어나지 않는 범위내에서 얼마든지 변형가능한 것이다. Hereinafter, the present invention will be described in more detail with reference to preferred embodiments. The following examples are illustrative of the present invention and are not to be construed as limiting the invention thereto, but may be modified within the scope of the present invention.

[실시예 1~3][Examples 1 to 3]

수지 총량에 대하여 유리섬유 5 ~ 30중량%, 이산화티타늄 5 ~ 50중량%를 포함하는 폴리프탈아마이드(Polyphthalamide; PPA)를 준비하고, 열전도성 필러로 5~ 100㎛의 입자크기를 가지는 알루미늄 분말(실시예1), 구리분말(실시예2), 은 분말(실시예3)의 열전도성 필러를 준비하여, 상기 PPA수지 100중량부에 대하여 상기 각각의 열전도성 필러를 0~30중량부를 포함하도록 혼합하여 펠렛 상태로 제조하였다. 수득된 펠렛을 충분히 제습건조하여 사출기로 열전도도 및 광 반사율을 측정하기위한 시편을 얻었으며, 열전도성 필러의 함량에 따른 반사율과 열전도율 변화를 측정하여 보았으며, 그 결과는 표 1에 나타내었다.Polyphthalamide (PPA) containing 5 to 30% by weight of glass fiber and 5 to 50% by weight of titanium dioxide is prepared with respect to the total amount of resin, and aluminum powder having a particle size of 5 to 100 탆 (thermoplastic resin Conductive paste of Example 1), a copper powder (Example 2) and a silver powder (Example 3) were prepared, and 0 to 30 parts by weight of each of the thermally conductive fillers was added to 100 parts by weight of the PPA resin Were mixed and made into a pellet state. The obtained pellets were sufficiently dehumidified to obtain a specimen for measuring thermal conductivity and light reflectance with an injection molding machine. The reflectance and thermal conductivity of the pellets were measured according to the content of the thermally conductive filler. The results are shown in Table 1.

이때, 열전도도 측정은 ASTM E1461의 측정방법을 사용하였고, 광 반사율은 스펙트로메터의 D65 광원을 이용한 전반사율을 측정하는 방법으로 측정하여 그 측정결과를 얻었다. At this time, the thermal conductivity was measured by ASTM E1461, and the reflectance was measured by a method of measuring the reflectance using a D65 light source of a spectrometer, and the measurement results were obtained.

구 분division 실시예1Example 1 실시예2Example 2 실시예3Example 3 열
전
도
율
(W/mK)Ten
I'm
Degree
rate
(W / mK) 00 0.170.17 0.300.30 0.310.31 33 0.450.45 0.700.70 0.790.79 66 1.031.03 1.711.71 1.791.79 1010 2.052.05 3.473.47 3.633.63 1515 2.652.65 4.514.51 4.724.72 2020 3.453.45 5.805.80 6.016.01 3030 6.056.05 9.899.89 10.1210.12 반
사
율
(%)half
four
rate
(%) 00 97.597.5 97.597.5 97.597.5 33 96.196.1 95.895.8 96.396.3 66 94.594.5 93.793.7 95.195.1 1010 92.592.5 91.591.5 93.293.2 1515 90.190.1 89.589.5 90.890.8 2020 83.483.4 77.577.5 84.784.7 3030 70.570.5 58.758.7 72.272.2

상기 표 1의 결과로 살펴본 바, 열전도성 필러의 첨가량에 따라 반사율과 열전도율의 변화를 측정한 결과, 메탈파우더 또는 탄소나노튜브 함량이 PPA수지 100중량부 대비 3중량부이상 포함되도록 혼합시 반사율은 90%이상으로 보이며, 열전도율은 1W/mK 이상으로써, LED광효율 감소를 최소화하며, 매우 우수한 방열효율 효과를 볼 수 있는 것을 알 수 있었다. 그 측정결과를 살펴본 바, 바람직하게 열전도성 필러의 함량이 PPA수지 100중량부에 대하여 6~15중량부의 범위에서 반사율이 90%이상의 효과를 볼 수 있으며, 그 이상에서는 열전도율이 증가하지만 반사율이 90%이하로 감소하므로 고효율 및 고방열 LED에 효과적이라고 볼 수 없음을 알 수있었다. As a result of the measurement of the results of Table 1, when the reflectance and the thermal conductivity were measured according to the addition amount of the thermally conductive filler, when the metal powder or the carbon nanotube was mixed so as to contain 3 parts by weight or more of the PPA resin, 90% or more, and the thermal conductivity is 1 W / mK or more, so that the reduction of the LED light efficiency is minimized, and the excellent thermal efficiency can be obtained. As a result of the measurement, it is preferable that the content of the thermally conductive filler is in the range of 6 to 15 parts by weight based on 100 parts by weight of the PPA resin, and the reflectance is 90% or more. %, Which means that it is not effective for high efficiency and high heat dissipation LED.

이상에서 본 발명에 기재된 구체적인 실시예를 중심으로 상세히 설명하였지만, 본 발명의 범주 및 기술사상의 범위내에서 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정은 첨부된 특허청구범위에 속하는 것도 당연한 것이다. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. Of course.

100: LED 패키지
110: 몰드
120, 130: 리드프레임
140: LED칩
150: 본딩와이어
160: 봉지재100: LED package
110: mold
120, 130: lead frame
140: LED chip
150: bonding wire
160: Encapsulant

Claims (10)

LED패키지용 플라스틱 사출수지 조성물에 있어서,
유리섬유(Glass Fiber)와 이산화티타늄(TiO2)를 일정량 함유하는 고분자 수지 100중량부에 대하여, 열전도성 필러 6~15중량부를 혼합하여 이루어지되,
상기 고분자수지는 폴리프탈아마이드(Polyphthalamide; PPA), 열가소성 폴리에스터 엔지니어링 수지(Thermiplastic Polyester Engineering Resins; PCT 수지)로 이루어진 군에서 선택되고,
상기 열전도성 필러는 입자크기 1~100㎛의 크기를 가지는 알루미늄(Al), 티타늄(Ti), 크로뮴(Cr), 철(Fe), 코발트(Co), 니켈(Ni), 구리(Cu), 아연(Zn), 납(Pd), 은(Ag), 카드뮴(Cd), 백금(Pt), 금(Au), 텅스텐(W)으로 이루어진 군에서 선택되는 어느 하나 이상의 메탈파우더(Metal Powder)로 구성되어,
열전도율이 1W/mK 이상이고, 반사율이 90% 이상을 갖는 것을 특징으로 하는 열전도율이 우수한 플라스틱 사출수지 조성물.
In a plastic injection resin composition for an LED package,
Conductive filler is mixed with 100 parts by weight of a polymer resin containing a certain amount of glass fiber and titanium dioxide (TiO2), and 6 to 15 parts by weight of a thermally conductive filler,
The polymer resin is selected from the group consisting of polyphthalamide (PPA), thermoplastic polyester engineering resins (PCT resin)
The thermally conductive filler may be at least one selected from the group consisting of Al, Ti, Cr, Fe, Co, Ni, Cu, And at least one metal powder selected from the group consisting of zinc (Zn), lead (Pd), silver (Ag), cadmium (Cd), platinum (Pt), gold (Au), and tungsten Respectively,
A thermal conductivity of 1 W / mK or more, and a reflectance of 90% or more.
삭제delete 삭제delete 제 1 항에 있어서,
상기 열전도성 필러는 입자크기 1~100㎛ 크기의 그라핀(Graphine) 또는 탄소나노튜브(CNT)인 것을 특징으로 하는 열전도율이 우수한 플라스틱 사출수지 조성물.
The method according to claim 1,
Wherein the thermally conductive filler is graphine or carbon nanotube (CNT) having a particle size of 1 to 100 mu m.
청구항 제1항 또는 제4항 중 어느 한 항 기재의 열전도율이 우수한 플라스틱 사출수지 조성물을 적용한 몰드를 포함하여 구성되는 도전층상에 실장되어 배치되는 LED칩을 포함하는 LED패키지.
An LED package comprising an LED chip mounted on a conductive layer comprising a mold to which a plastic injection resin composition having excellent thermal conductivity as claimed in any one of claims 1 to 4 is applied.
청구항 제5항의 열전도율이 우수한 플라스틱 사출수지 조성물이 적용된 몰드를 포함하는 LED패키지로 구성된 조명기구.
A lighting apparatus comprising an LED package including a mold to which a plastic injection resin composition having excellent thermal conductivity is applied.
제 5 항에 있어서,
상기 LED칩은 Epi-Up Chip, Vertical Chip, Flip Chip으로 이루어진 군에서 선택되는 어느 하나의 칩을 포함하는 LED패키지.
6. The method of claim 5,
Wherein the LED chip includes any one selected from the group consisting of an Epi-Up Chip, a Vertical Chip, and a Flip Chip.
제 5 항에 있어서,
상기 LED칩을 구성하는 LED는 측면발광 LED, Top View LED, High Power LED, COB LED, CSP LED중 어느 하나인 것을 특징으로 하는 LED패키지.
6. The method of claim 5,
Wherein the LEDs constituting the LED chip are any one of a side emitting LED, a top view LED, a high power LED, a COB LED, and a CSP LED.
삭제delete 제 5 항에 있어서,
상기 몰드는 열전도율이 2W/mK 이상이고, 반사율이 90% 이상을 갖는 고분자수지를 포함하는 LED 패키지.6. The method of claim 5,
Wherein the mold comprises a polymer resin having a thermal conductivity of 2 W / mK or more and a reflectance of 90% or more.
KR1020160137532A 2016-10-21 2016-10-21 Plastic injection resin composition having excellent thermal conductivity and LED package using it KR101711892B1 (en)

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