KR101680291B1 - Deposition apparatus and method - Google Patents

Deposition apparatus and method Download PDF

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Publication number
KR101680291B1
KR101680291B1 KR1020150139081A KR20150139081A KR101680291B1 KR 101680291 B1 KR101680291 B1 KR 101680291B1 KR 1020150139081 A KR1020150139081 A KR 1020150139081A KR 20150139081 A KR20150139081 A KR 20150139081A KR 101680291 B1 KR101680291 B1 KR 101680291B1
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KR
South Korea
Prior art keywords
temperature
processing space
processing
source
supply line
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KR1020150139081A
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Korean (ko)
Inventor
박종수
허병순
하도균
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참엔지니어링(주)
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Priority to KR1020150139081A priority Critical patent/KR101680291B1/en
Priority to TW104136090A priority patent/TWI567230B/en
Priority to JP2015221355A priority patent/JP6224054B2/en
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Publication of KR101680291B1 publication Critical patent/KR101680291B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Abstract

The present invention provides a deposition device and a deposition method, capable of easily controlling the temperature of an object to be treated while a layer is deposited on the object to be treated in a chemical vapor deposition method. The deposition device includes: a chamber unit installed in the air; a source supply unit open on one side of the inner circumference of a treatment hole formed on one side of the chamber unit; a first exhaust line open by enclosing the outer side of the treatment hole on one side of the chamber unit; a purge gas supply line open by enclosing the outer side of the first exhaust line on one side of the chamber unit; a second exhaust line open by enclosing the outer side of the purge gas supply line on one side of the chamber unit; and a temperature rising gas supply line open to be inclined to be partially overlapped with the inner circumference of the treatment hole on one side of the chamber unit. The deposition device deposits the layer on the object to be treated, which is supported in the air.

Description

[0001] Deposition apparatus and method [0002]

The present invention relates to a deposition apparatus and a deposition method, and more particularly, to a deposition apparatus capable of easily controlling a temperature of a process material when depositing a film on a process material by a chemical vapor deposition method, and a deposition method applied thereto.

Various display devices have electronic circuits formed on a substrate, and the conductive lines of these electronic circuits may cause defects such as disconnection or short-circuit during manufacturing or after manufacture of the circuit. For example, during the process of manufacturing various display devices including an LCD (Liquid Crystal Display), an OLED (Organic Light Emitting Display), or an LED (Light Emitting Display), electrodes or wirings Signal lines and the like may be partially disconnected to cause an open defect.

Therefore, during the process of manufacturing various display devices, a repair process for repairing an open defect is performed. Such a repair process is carried out in the atmosphere, for example, by a chemical vapor deposition type repair apparatus.

On the other hand, in order to repair open defects, a metal source atmosphere is formed in the repair position after the repair position of the substrate is raised to a predetermined temperature, and a film is deposited by irradiating the defect position with a laser.

Conventionally, a stage glass was used to raise the temperature at the repair position of the substrate. For example, an electroconductive film was attached to a stage glass to provide a heating glass, and the whole of the substrate was heated using the heating glass. Thus, there is a difficulty in raising the temperature of the entire substrate in order to repair the local position of the substrate. In addition, since the surface on which the film is deposited is the upper surface of the substrate, since the temperature was elevated through the lower surface of the substrate, it took a long time to raise the temperature and it was difficult to control the temperature accurately.

KR 10-0909959 B1

The present invention provides a deposition apparatus and a deposition method capable of directly raising the temperature of one side of a processed material in contact with a processing space in depositing a film on a processed material in the atmosphere.

The present invention provides a deposition apparatus and a deposition method capable of locally raising the temperature of one surface of a processed material in contact with a processing space in depositing a film on a processed material in the atmosphere.

The present invention provides a deposition apparatus and a deposition method capable of suppressing or preventing formation of impurities in a deposited film in depositing a film on a treatment product in the atmosphere.

A deposition apparatus according to an embodiment of the present invention is an apparatus for depositing a film on a processing object supported in the atmosphere, which is disposed in the atmosphere, in which a processing hole is formed on a surface facing the processing object, A chamber portion for providing a processing space; A source supply line extending to the inside of the chamber portion and having an outlet portion opened at least at one side of the inner circumferential surface of the processing hole; And a temperature-rising gas supply line extending in a direction toward the processing hole from the inside or outside of the chamber portion, the outlet portion facing the processing space.

And a purge gas supply line extending to the inside of the chamber portion and having an outlet portion wound around the outside of the source supply line on one side of the chamber portion.

The purge gas supply line may further include an exhaust line formed to extend into the chamber and having an inlet portion surrounding at least one of an inner side and an outer side of the purge gas supply line on one side of the chamber portion.

A laser part formed to be capable of irradiating laser to the processing space; A source supply connected to the source supply line; A temperature elevation gas supply unit connected to the temperature elevation gas supply line; And a temperature control unit for controlling the temperature of the temperature-elevating gas supplied to the temperature-raising-gas supply unit corresponding to the deposition temperature of the source supplied from the source supply unit.

A purge gas supply unit connected to the purge gas supply line; A first exhaust unit connected to a first exhaust line that surrounds at least a part of the processing hole inside the purge gas supply line of the exhaust line; And a second exhaust unit connected to a second exhaust line that surrounds and surrounds the outside of the purge gas supply line among the exhaust lines.

Wherein the processing hole is opened from one side of the chamber portion to the lower side and connected to the upper portion of the processing space, the heating gas supply line is formed inside the chamber portion, and at least the outlet portion is inclined downward in the direction toward the center portion of the processing space .

At least an outlet portion of the temperature-rising gas supply line is opened at one side of the chamber portion so as to pass through the inside of the processing hole obliquely and abut the edge portion of the processing space, and can be partially overlapped with the processing hole.

A deposition method according to an embodiment of the present invention is a method of depositing a film on a processed article supported in the air, comprising: preparing a processed article in the air; Controlling the temperature by injecting a heating gas into the processing space of the processed product; Spraying a source into the processing space of the processed material; And a step of forming a film by irradiating a laser on one side of the processed product.

And separating the processing space from the outside air by injecting a purge gas into the processing material so as to surround the outside of the processing space.

And discharging at least one of reactant, product, and unreacted material from at least one of the interior and the exterior of the processing space.

The step of controlling the temperature may include the step of injecting the temperature-rising gas obliquely toward the processed material inside the processing space.

The controlling of the temperature may include injecting the temperature-rising gas in a downward slope in a direction from one side of the edge of the processing space toward the center.

Controlling the temperature includes the steps of discharging the temperature-rising gas from at least the other side of the edge of the processing space and inducing a flow of the temperature-rising gas passing through the center of the processing space; And injecting a purge gas into the processed product so as to surround the outside of the process space to isolate the flow of the heated gas from the outside air.

The process of forming the film may include a process of repairing defects by forming a film on the open defect of the processed product.

The process of forming the film may further include the step of controlling the temperature of the repaired area of the processed product by injecting a heated gas into the processed space of the processed product.

The temperature-elevated gas may be raised to a temperature range corresponding to the deposition temperature of the source and injected into the processing space of the processed material.

The temperature elevating gas may be heated to a temperature ranging from 25 ° C to 50 ° C and injected into the processing space of the treated product.

The source may include a metal source, and the metal source may include a cobalt source. The temperature elevating gas may include air.

According to the embodiment of the present invention, when depositing a film on a treatment product in the air, one side of the treatment product in contact with the treatment space can be directly heated. In addition, it is possible to locally raise the temperature of one side of the processed product in contact with the processing space. From this, it is possible to control the temperature of one side of the processed product to a temperature range in which the film is cleanly deposited, thereby preventing or preventing formation of impurities in the deposited film.

For example, in the case of repairing open defects formed on one surface of a substrate during or after manufacture of various display devices by a chemical vapor deposition method, a temperature-rising gas is sprayed into a processing space in contact with the repair area of the substrate on which defects are located, The temperature can be raised to the temperature range corresponding to the deposition temperature. Then, the metal source is sprayed to the process space, and a laser beam is irradiated to the repair area to form a clean film having no impurities at the defect position. That is, the temperature of the processing space is controlled to a desired temperature by first injecting the temperature-rising gas into the processing space, and then the metal source is sprayed to deposit a film on the processed material to form a clean film.

In this case, the structure of the support portion can be remarkably simplified, and the manufacturing cost of the apparatus can be reduced, compared with the conventional method of indirectly raising the repair region of the substrate by applying heat to the other surface of the substrate in contact with the support portion using the support portion. In addition, the energy consumed in the process of directly heating the substrate with the temperature-elevating gas is lower than the energy consumed in indirectly raising the substrate with the support, so that the energy efficiency of the entire process can be significantly improved.

In addition, while a series of processes in which the processing space is heated and the defect position is repaired, the processing space can be surrounded by the purge gas outside the processing space to isolate the processing space from the outside air. In particular, it is possible to isolate the flow of the heating gas from the outside air in the process of raising the temperature of the repair region, thereby effectively controlling the temperature of the repair region.

Further, during the injection of the temperature-rising gas into the processing space, the flow of the temperature-rising gas can be induced to the other side of the edge portion of the processing space via the central portion of the processing space at one side of the edge portion of the processing space. From this, it is possible to control the defective position of the repair region contacting the central portion of the processing space to a clean state by using the flow of the temperature-rising gas before forming the film at the defect position, and to remove the foreign matter remaining at the defect position of the repair region from the processing space It can be exhausted.

1 is a view for explaining a deposition apparatus according to an embodiment of the present invention;
2 is a view for explaining a chamber part according to an embodiment of the present invention;
3 is a view for explaining one side of a chamber part according to an embodiment of the present invention.
4 is a view for explaining the inside of a chamber part according to an embodiment of the present invention.
5 and 6 are views for explaining a deposition method according to an embodiment of the present invention.
FIG. 7 is a photograph illustrating a repair result of a repair process to which a deposition apparatus and a deposition method according to an embodiment of the present invention are applied, in comparison with the conventional method. FIG.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but may be embodied in various forms. It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS The drawings may be exaggerated or enlarged to illustrate embodiments of the invention, wherein like reference numerals refer to like elements throughout.

FIG. 1 is a block diagram showing a deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a chamber section of a deposition apparatus according to an embodiment of the present invention. FIG. 3 is a schematic view showing one side of a chamber according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of a part of a chamber according to an embodiment of the present invention, 2 is a schematic view showing a cross-sectional structure of a portion AA 'of FIG.

In the drawings, the connection relationship between the components is partially exaggerated to show the connection relationship between the components, with the focus being on the portion of the overall structure of the device, which is described in the corresponding drawings. Some of which are omitted.

Hereinafter, a deposition apparatus according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4. FIG.

The deposition apparatus according to the embodiment of the present invention may include, for example, a chemical vapor deposition (CVD) repair apparatus for depositing a film on a treatment object S provided in the atmosphere. The deposition apparatus includes a support 100, a chamber 200, a source supply line 311, a source supply 310, a temperature elevation gas supply line 411, a temperature elevation gas supply 410, a temperature elevation gas supply line guide 420 ), A laser unit 610, an optical unit 620, and a temperature control unit 700 as components.

The processed material S may be a substrate on which various electronic devices are formed on one surface, or may be a substrate on which processes for manufacturing the electronic devices are in progress or the process is completed. For example, the processed material S may be a glass substrate on which a gate line, a data line, a pixel, and a thin film transistor are formed on one surface.

The supporting part 100 may be an integral plate type stage glass or a bar type stage glass which is formed so as to be capable of supporting the processed product S on one side, for example, the upper surface, or a split type bar type stage glass. The supporting part 100 may be provided with an aligning part (not shown) so as to align the processing object S in at least one of x-axis direction and y-axis direction. Further, the supporting portion 100 may be provided with a lift pin (not shown) and a vacuum chuck (not shown) so as to support the processing object S in the z-axis direction.

The support 100 may be mounted on the upper surface of a table (not shown) and fixed in position. Alternatively, the support portion 100 may be installed on the table so as to be movable in at least one of the x-axis direction, the y-axis direction, and the z-axis direction.

A mounting portion (not shown) may be installed on the upper surface of the table so as to be movable in at least one of x-axis direction, y-axis direction, and z-axis direction. Alternatively, a mounting portion may be provided on the upper surface of the table to fix the position.

For example, when the support portion 100 is installed on the upper surface of the table and is fixed in position, the mounting portion can be installed movably on the upper surface of the table. On the other hand, if the supporting portion 100 is provided so as to be movable on the upper surface of the table, the mounting portion may be installed on the upper surface of the table and fixed in position. In addition, the support portion 100 and the mounting portion can be installed on the table in various ways that are movable relative to each other.

The mounting portion serves to movably support the chamber portion 200, the laser portion 610, and the optical portion 620. The mounting portion may be spaced apart from the upper portion of the support portion 100. For example, Can be applied.

On the other hand, in the embodiment of the present invention, there is no need to limit the configuration and the manner of the table, the alignment unit, the lift pin, the vacuum chuck, and the mounting unit to a specific configuration and method. In order to avoid obscuring the gist of the present invention, detailed description of these constituent parts is omitted in the embodiment of the present invention.

The chamber part 200 may be disposed in the atmosphere and spaced above the support part 100, for example, mounted on the mounting part, and may be movably supported in the x-, y-, and z-axis directions. A processing hole 230 is formed on one surface 211 of the chamber part 200 facing the processed material S. The chamber part 200 provides a predetermined processing space 10 between the chamber part 200 and the processing object S using the processing hole 230. [ At this time, the processing space 10 is a space formed below the processing hole 230 between the chamber part 200 and the processing object S, or a space formed below the processing hole 230, As shown in FIG.

The chamber part 200 may be formed by stacking a plurality of plates in the z-axis direction, and may be divided into a chamber body 210 and a connection part 220. The size and shape of the chamber body 210 are not particularly limited and may be, for example, a disk shape having a predetermined width in the x-axis direction and the y-axis direction and a predetermined thickness in the z-axis direction. The chamber body 210 serves to provide a processing space 10 between the processing object S and the processing object S.

The connection part 220 may be provided to surround one side of the side surface of the chamber body 210. The size and shape of the connection portion 220 are not particularly limited and may be, for example, a rectangular plate shape having a predetermined width in the x-axis direction and the y-axis direction and a predetermined thickness in the z-axis direction. The connection part 220 serves to structurally support the chamber body 210, the source supply line 311, and the like.

The lower surface of the chamber part 200 may face the processing object S as a surface including the lower surface of the chamber body 210 and the lower surface of the connection part 220. [ The other surface 212 of the chamber part 200 such as the upper surface may face the optical part 620 as a surface including the upper surface of the chamber body 210 and the upper surface of the connection part 220.

A heating member (not shown) may be provided inside the chamber part 200. The heating member serves to regulate and maintain the temperature of the source and temperature-rising gas respectively flowing through the source supply line 311 and the temperature-rising gas supply line 411 to a desired temperature, respectively. In addition, a heat block member (not shown) may be provided inside the chamber 200 to surround the upper and lower sides of the heating member. The heat block member serves to prevent the heat inside the chamber part 200 from being transferred to the upper and lower sides of the chamber part 200.

The processing hole 230 may be formed through the center of the chamber body 210 in the z-axis direction and may be open from one side of the chamber body 210 to the bottom of the chamber body 210 and connected to the upper portion of the processing space 10. The processing hole 230 may be, for example, a shape of a rotating body whose inner diameter is narrowed in a direction from one surface to the other surface of the chamber body 210.

A window 240 may be mounted on the upper portion of the processing hole 230. The window 240 serves to isolate the inside of the processing hole 230 from the outside air on the upper side of the chamber body 210. The window 240 may be formed of a material such as a quartz material capable of passing a laser beam. A ring-shaped window holder 241 may be mounted on the upper edge of the window 240 and a sealing member 242 may be provided between the window 240 and the window holder 241.

A plurality of source emitting surfaces may be formed on one surface of the chamber body 210. The plurality of source emitting surfaces may include a first source emitting surface 261a, a second source emitting surface 261b, and a third source emitting surface 261c. Each of the source spray surfaces may be formed at a position partially overlapping the process hole 230 by surrounding the process hole 230 so as to contact the edge portion 12 of the process space. Of course, the plurality of source spray surfaces may be formed at a predetermined position, for example, below the inner circumferential surface of the process hole 230, which satisfies the supply of the source to the inner lower portion of the process hole 230.

A temperature rising gas spraying surface 262 may be formed on one surface of the chamber body 210. The temperature rising gas spraying surface 262 may be spaced apart from the plurality of source spraying surfaces to contact edge portions 12 of the processing space. The processing hole 230 may be partially overlapped with the processing hole 230.

Temperature gas supply holes 254 may be formed on the other surface of the chamber body 210 and the temperature rising gas supply holes 254 may be formed on the opposite side of the connection portion 220, And may be formed at a predetermined position on the other side of the body 210.

At least one source supply hole 251 may be formed on the other surface of the connection part 220. When a plurality of source connection holes are formed in the connection part 220, a second source supply hole (not shown) A source supply hole (not shown) may be further formed.

The source supply line 311 serves to transport the metal source into the processing hole 230. The source supply line 311 may extend into the interior of the chamber 200 and the outlet 311b may be open at least on one side of the inner circumferential surface of the process hole 230 to form at least one source spray surface .

At least one source supply line 311 may be provided, and if a plurality of source supply lines 311 are provided, a second source supply line (not shown) and a third source supply line (not shown) may be further provided. Each source supply line can supply the same source, and one source supply line can supply a different source than the remaining source supply lines, and each can supply a different source.

The source supply line 311 may extend through the source supply hole 251 and into the chamber portion 200. Further, a second source supply line (not shown) may extend through the second source supply hole (not shown) and into the chamber part 200, and a third source supply line (not shown) May extend through the supply hole (not shown) and into the interior of the chamber part 200.

A source supply chamber 311a may be provided in the source supply line 311 and a source supply chamber 311a may be formed in the interior of the chamber body 210 by surrounding the processing hole 230 by, . Each of the source supply line 311, the second source supply line (not shown), and the third source supply line (not shown) may be connected to the source supply chamber 311a within the chamber body 210.

The outlet 311b of the source supply line 311 may be formed to penetrate the chamber body 210 downwardly so as to face the processing hole 230 from the source supply chamber 311a. The first source emitting surface 261a, the second source emitting emitting surface 261b, and the third source emitting emitting surface 261c may be formed at three positions spaced apart from each other on the inner peripheral surface of the hole 230.

The source supply unit 310 is connected to the source supply line 311 and serves to supply a source for depositing a film. The source supply 310 includes a source (not shown) for storing at least one source, a carrier gas source (not shown) for storing a carrier gas for transporting the source, a flow controller Valve. (Not shown) such as a hot wire may be provided to smoothly vaporize a source, e.g., a metal source, to the source supply source (not shown), and the metal source may be heated in a gaseous state to supply an inert gas such as argon gas To the source supply line 311.

The metal source supplied from the source supply unit 310 to the inside of the processing hole 230 through the source supply line 311 may include a cobalt source. The cobalt source is advantageous in that its price is lower than that of a tungsten source and the temperature required for vaporization is low.

The temperature elevating gas supply line 411 serves to regulate the temperature of the process material S by supplying a temperature-rising gas to the process space 10. The temperature-elevated gas supply line 411 may extend in the direction toward the processing hole 230 from the inside or the outside of the chamber part 200, and the outlet part may be opened at the edge part 12 of the processing space.

On the other hand, in the embodiment of the present invention, the gap between the processing object S and the chamber part 200 may be several micrometers. Correspondingly, in the embodiment of the present invention, the temperature rising gas supply line 411 ). The temperature elevation gas supply line 411 may extend from one side 211 of the chamber part 200 to the lower side of the chamber part 200 and open in the vicinity of the processing hole 230.

The temperature-elevating gas supply line 411 may be formed inside the chamber part 200 so that the outlet part is inclined downward in the direction toward the central part 11 of the processing space. That is, at least the outlet of the temperature-rising gas supply line 411 is opened at one side 211 of the chamber part 200 so as to pass through the inside of the processing hole 230 in an inclined manner so as to contact the edge of the processing space, 230). For this purpose, the temperature-rising gas supply line 411 may further include a temperature-rising gas supply line guide pipe 420. The temperature-elevated gas supply line guide pipe 420 may be mounted through the chamber body 210 in an inclined manner so as to connect the temperature-elevated gas supply hole 254 and the temperature-rising gas spraying surface 262, The outlet of the line 411 may be extended.

The temperature-rising gas supply unit 410 is connected to the temperature-rising gas supply line 411 and serves to supply the temperature-rising gas. The temperature elevating gas supply unit 410 may include a temperature elevating gas supply source (not shown) for storing a temperature elevating gas such as air or an inert gas, a flow controller (not shown) for controlling the supply of temperature elevating gas, and a control valve . A predetermined heating means (not shown) and a cooling means (not shown) may be provided to the temperature-elevated gas supply source (not shown) so as to control the temperature of the temperature-elevated gas. At this time, the heating means and the cooling means described above may be applied with various means used for heating and cooling the substrate in general, for example, a thermoelectric element or a heat pump, and there is no particular limitation thereto. The temperature-rising gas may be controlled to a predetermined temperature range and supplied to the temperature-rising gas supply line 411.

The temperature control unit 700 controls the temperature of the temperature-rising gas supplied to the temperature-rising gas supply unit 410 according to the deposition temperature or the vaporization temperature of the source supplied from the source supply unit 310, The temperature of the heating gas can be controlled to a desired temperature by using the corresponding deposition temperature information or the vaporization temperature information.

The deposition apparatus according to the embodiment of the present invention may be configured to perform deposition using the temperature elevation gas supply line 411, the temperature elevation gas supply unit 410 and the temperature control unit 700 to a predetermined temperature range corresponding to the deposition temperature or vaporization temperature of the source The temperature of the processing space 10 can be controlled. Thus, during the deposition of the film on the defective position of the processing object S in the processing space 10, no impurities are generated in the film, and the film over-growth can be prevented.

The laser unit 610 is spaced upward from the chamber unit 200 and serves to generate a laser beam irradiated to the process space 10 so that the laser can be irradiated to the process space 10. The laser unit 400 irradiates laser to the defective position of the processed product S exposed through the window 240 of the chamber 200 to cut the wiring or to supply heat energy to the portion where the wiring is to be formed in the source atmosphere Thereby allowing the metal source to be deposited as a film at the local defect location. The laser unit 610 may be a pulse laser or a continuous laser, and may be configured such that the output can be varied according to a repair operation.

The optical unit 620 is disposed between the laser unit 610 and the chamber unit 200 to adjust the focus and the optical path of the laser irradiated by the laser unit 610. The optical unit 620 may include a laser advancing direction control unit (not shown) for controlling the advancing direction of the laser and a laser effective area expanding unit (not shown) for increasing the incident angle of the laser. In addition, the optical unit 620 may further include a monitoring unit (not shown) for monitoring the state of the processing object S. The laser traveling direction control unit may include at least one rotatable mirror that can change the traveling direction of the laser by reflecting the laser in a predetermined direction. By using the laser advancing direction control section, it is possible to move the region irradiated with the laser in the processed product S without moving the entire deposition apparatus. The laser effective area expanding part can perform the function of increasing the incident angle of the laser with respect to the objective lens by refracting the laser using at least two bending lenses (not shown). Accordingly, without moving the entire repairing device, (Laser effective area) of the laser beam. The monitoring unit monitors the defects and the repair status of the processed product S by photographing a desired area of the processed product S and determining whether or not the corresponding area is formed.

The deposition apparatus according to an embodiment of the present invention may include a plurality of purge gas supply lines 321 and 321a and 321b and a purge gas supply unit 320 connected thereto in addition to the above components. Corresponding to this, for example, an annular purge gas spraying surface 264 may be formed on one side of the chamber body 210 by surrounding the outside of the processing hole 230. A plurality of purge gas supply holes 252a and 252b may be formed on the other surface of the connection part 220. [

The first purge gas supply line 321a of the plurality of purge gas supply lines may extend into the chamber 200 through the first purge gas supply holes 252a of the plurality of purge gas supply holes. The outlet (not shown) of the first purge gas supply line 321a may be opened inside the processing hole 230 through the upper side of the processing hole 230.

The first purge gas supply line 321a serves to prevent the deposition of a film of the metal source on the lower surface of the window 240 by supplying the purge gas to the upper inside of the processing hole 230, Even if some metal source is deposited on the lower surface, it is immediately used to remove the purge gas by using the injection pressure. From this, the lower surface of the window 240 can be maintained in a clean state, so that the laser can smoothly pass through the window 240 and can be stably irradiated on one side of the treated material.

The second purge gas supply line 321b of the plurality of purge gas supply lines extends through the second purge gas supply hole 252b of the plurality of purge gas supply holes to extend into the interior of the chamber 200, The outlet portion 321d of the purge gas supply line 321b may be wound around the outer side of the source supply chamber 311a and the outlet portion of the temperature elevation gas supply line 411 from one surface of the chamber portion 200. [ The second purge gas supply line 321b serves to form, for example, an air curtain by injecting a nitrogen gas or an inert gas such as argon gas to the outside of the processing space 10. [ A purge gas supply chamber 321c may be provided in the second purge gas supply line 321b and a purge gas supply chamber 321c may be formed by surrounding the outside of the source supply chamber 311a and forming a purge gas Or may be formed in a ring shape. The second purge gas supply line 321b may be connected to the purge gas supply chamber 321c inside the chamber body 210 and the outlet portion 321d of the second purge gas supply line 321b may be connected to the purge gas supply chamber 321c Through the chamber body 210 in a direction toward one side of the chamber body 210 and open downward at a plurality of positions of the purge gas spraying surface 264. [

The purge gas supply unit 320 is connected to the purge gas supply line 321 to supply the purge gas. The purge gas supply unit 320 includes a purge gas supply source (not shown) in which the purge gas is stored, A controller (not shown) and a control valve (not shown).

In addition, the deposition apparatus according to an embodiment of the present invention may include at least one exhaust line and at least one exhaust unit in addition to the above-described components. Correspondingly, for example, a first exhaust surface 263 in the form of a ring may be formed on at least a part of the outside of the processing hole 230 inside the purge gas spraying surface 264 on one side of the chamber body 210 . In addition, a ring-shaped second exhaust surface 265 may be formed around the outside of the purge gas spray surface 264, for example, on one surface of the chamber body 210. In addition, a first exhaust hole 253a and a second exhaust hole 253b may be formed on the other surface of the connection portion 220.

The plurality of exhaust lines may include a first exhaust line 511 and a second exhaust line 521. The first exhaust line 511 may pass through the first exhaust hole 253a and may pass through the chamber portion 200, And the inlet portion 511b may be wound around the inside of the outlet portion 321d of the second purge gas supply line 321b from one surface 211 of the chamber portion 200. [ The second exhaust line 521 extends through the second exhaust hole 253b and extends into the interior of the chamber portion 200. An inlet portion 521b of the second exhaust line 521 extends from one surface 211 of the chamber portion 200 to a second The outside of the outlet portion 321d of the purge gas supply line 321b can be wound around.

The first exhaust line 511 serves to exhaust at least one of reactants, products, and unreacted materials generated in the processing space 10 from the processing space 10 while the film is being deposited on the processing object S. The second exhaust line 521 serves to exhaust purge gas injected to the processing object S to form an air curtain outside the purge gas injection surface 264. [

The first exhaust line 511 may be provided with a first exhaust chamber 511a and the second exhaust line 521 may be provided with a second exhaust chamber 521a. The first exhaust chamber 511a may be formed in the interior of the chamber body 210 by surrounding the source supply chamber 311a by surrounding the purge gas supply chamber 321c and forming the second exhaust chamber 521a May be formed in a ring shape, for example, inside the chamber body 210 by surrounding the outside of the purge gas supply chamber 321c.

The end of the first exhaust line 511 may be connected to the first exhaust chamber 511a and the inlet portion 511b of the first exhaust line 511 may be connected to the exhaust chamber 511a of the chamber body 210 in the first exhaust chamber 511a. And may be opened downward at a plurality of positions of the first exhaust surface 263 through the chamber body 210 in a direction toward the one surface. The end of the second exhaust line 521 may be connected to the second exhaust chamber 521a and the inlet 521b of the second exhaust line 521 may be connected to the second exhaust chamber 521a of the chamber body 210 And may be opened downward at a plurality of positions of the second exhaust surface 265 through the chamber body 210 in a direction toward the one surface.

The exhaust part such as the exhaust pump or the vacuum pump may include a first exhaust part 510 and a second exhaust part 520. The first exhaust part 510 may include a purge gas supply line 321 among a plurality of exhaust lines, To the first exhaust line 511 which surrounds at least a part of the processing hole 230 inside the first exhaust line 511. The second exhaust part 520 may be connected to the second exhaust line 521 which surrounds the outside of the purge gas supply line 321 among the plurality of exhaust lines. Various substances such as reactants, products and unreacted substances generated in the process of depositing the film on the treated product S by the exhaust part can be collected into the apparatus without being exhausted to the atmosphere.

5 and 6 are process diagrams for explaining a deposition method according to an embodiment of the present invention, and FIG. 7 is a flowchart illustrating a repair result of a repair process using a deposition apparatus and a deposition method according to an embodiment of the present invention, The results are respectively photographed and compared.

4 to 7, a deposition method according to an embodiment of the present invention will be described in detail.

According to an embodiment of the present invention, there is provided a deposition method for depositing a film on a processing object supported in the air, comprising the steps of: preparing a processing object in the atmosphere; controlling a temperature by injecting a heating gas into a processing object processing space; A step of spraying a source into a processing space of the object to be treated, and a step of forming a film by irradiating a laser on one surface of the object to be processed. The method may further include, after the step of spraying the source, injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the processing space from the outside air. The method may further include the step of discharging at least one of reactants, products and unreacted materials from at least one of the interior and the exterior of the processing space after the film formation process.

At this time, the process of injecting the source, the process of isolating the process space from the outside air, the process of forming the film, and the process of exhausting may be performed simultaneously or together, or may be sequentially performed in an arbitrary order . That is, the order of these processes is not particularly limited.

In addition, the process of isolating the processing space from the outside air and the process of exhausting at least one of the inside and the outside of the processing space during the above-described processes may be performed before the process of controlling the temperature by injecting the temperature-rising gas into the processing space , And controlling the temperature by injecting a temperature-rising gas into the processing space. That is, the process of isolating the process space from the outside air and the process of exhausting at least one of the inside and the outside of the process space are not particularly limited to the processes in the order.

In the following, a process of preparing a process material in the air, a process of controlling the temperature by injecting a temperature-elevated gas into the process space of the process material, a process of spraying a source into the process space of the process material, A step of injecting a purge gas into the water to isolate the processing space from the outside air; a step of forming a film by irradiating a laser on one side of the processing object; and a step of forming at least one of reactant, The method of the present invention will be described in detail with reference to the deposition method in which the process of discharging the molten metal is sequentially performed.

First, a treated material is prepared in the air. The processed material S may be a substrate, and may be provided in the atmosphere and be supported by the supporting portion.

Thereafter, the temperature is controlled by injecting the temperature-rising gas (g a ) into the processing space (10) above the treated product (S). The process of controlling the temperature may include a step of injecting the temperature-elevated gas g a at an angle to the treated material S inside the process space. More specifically, A step of injecting a temperature-rising gas inclined downward in a direction toward the processing chamber 11, a step of introducing a temperature-rising gas flow passing through a central portion of the processing space by exhausting a temperature-rising gas from at least the other side 12b of the edge portion of the processing space, And discharging purge gas (f) to the treated product so as to surround the outside of the space to isolate the flow of the heated gas from the outside air.

As a result, it is possible to increase the temperature of the defective position of the treated material S by using the temperature-rising gas, and to prevent impurities from being generated in the film deposition process. Further, So that the foreign matter remaining in the defect position can be exhausted and removed. At this time, the flow of the temperature-elevated gas can be easily changed and applied to various flows satisfying the passing through the central portion 11 of the processing space.

At this time, the temperature-elevating gas may include air, and the temperature-elevating gas may be raised to a temperature range corresponding to the deposition temperature or the vaporization temperature of the source and may be injected into the processing space 10 of the processing object for a predetermined time. For example, if the source is a cobalt source, the temperature-elevated gas may be heated to a temperature range of 25 ° C to 50 ° C, to a temperature range of 30 ° C to 40 ° C or to a temperature of 35 ° C, .

For example, the temperature of the processing object 10 in the processing space 10 is raised to a temperature lower than the vaporization temperature of the source, for example, less than 25 占 폚, . In this case, the deposition efficiency of the source is lowered, and impurities are formed in the deposited film. When the temperature of the heating gas is raised to a temperature higher than the source vaporization temperature, for example, 50 캜, and is injected into the processing space 10, the position of the processing object 10 in the processing space 10, Lt; RTI ID = 0.0 > 50 C. < / RTI > In this case, the source is overgrown during the deposition and the film is not uniformly deposited. Therefore, in the embodiment of the present invention, impurities are not generated in the film deposited thereon by raising the temperature of the temperature-rising gas to within the range of the vaporization temperature of the source, and the film is prevented from being overcharged, Lt; / RTI >

On the other hand, an inert gas may be used as the temperature rising gas.

Thereafter, when the process of controlling the temperature by injecting the temperature-elevated gas into the process space 10 is completed, the injection of the temperature-elevated gas is stopped, and then the source g is sprayed into the process space of the process material. At this time, a plurality of source supply lines may be used to inject different sources into the processing holes 230 and into the processing space, or one source may be injected into the processing holes 230 . At this time, the source includes a metal source, and may include, for example, a cobalt source. The source may be prepared in the source supply in the state of flux and then vaporized and transported to the carrier gas to enter the process hole 230 and the process space 10.

In the above description, the method of completely stopping the injection of the temperature-elevated gas during the injection of the source into the processing space has been exemplified, but this can be variously changed. For example, when the temperature control process is completed, the process of injecting the source is performed, and the injection of the temperature-elevated gas can be maintained at this time. Here, the injection amount of the temperature-elevated gas can be constantly or gradually decreased based on the injection amount in the temperature control process, or can be kept constant at a reduced injection amount.

Thereafter, purge gas (f) is injected into the processing material so as to surround the outside of the processing space 10, thereby isolating the processing space from the outside air. That is, it is possible to form an air curtain outside the processing space to isolate the processing space from the outside air, thereby preventing contaminants from entering the processing space.

Thereafter, a laser beam is irradiated to one surface of the processed material to form a film. It is possible to deposit the film by irradiating the laser to the defective position, for example, the open defect in a state where the inside of the processing hole 230 is controlled to the source atmosphere, and the defect of the processed product S can be repaired.

Thereafter, at least one of the reactant, the product and the unreacted material is exhausted from at least one of the interior and the exterior of the processing space. Products and unreacted materials generated during the reaction can be discharged at a position around the inner edge of the processing space, and the purge gas used for forming the air curtain outside the air curtain can be exhausted.

Meanwhile, the process of forming the film may further include the step of controlling the temperature of the repaired area of the treated product by injecting the heated gas into the treated process space 10, thereby stabilizing the repaired film.

7 (b). The results of the repair process using the conventional repair method are shown in FIG. 7 (b). FIG. 7 shows the result of the repair process using the conventional repair method. a). In the embodiment of the present invention, since the repair position of the substrate, that is, the defect position can be directly raised, the temperature can be easily controlled and the defect position is controlled to a temperature favorable for deposition. , The film can be formed cleanly.

On the other hand, in the conventional method, since the defective position of the substrate is indirectly heated by using the stage glass at the lower part of the substrate, it is difficult to control the temperature of the substrate, so that the defective position of the substrate and the temperature around the substrate are uneven, For example, lower or higher than the vaporization temperature of the cobalt source. As described above, the temperature of the defective position of the substrate is irregular, and impurities are formed in the film, and a part of the film is overgrown. As a result, the film is non-uniformly deposited according to the deposition result (see FIG.

As described above, the repair process of the open defect to which the deposition apparatus and the deposition method according to the embodiment of the present invention are applied can confirm that the film is cleanly formed on the processed product, for example, the substrate, unlike the conventional case.

It should be noted that the above-described embodiments of the present invention are for the purpose of illustrating the present invention and not for the purpose of limitation of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.

S: treated water 10: treated space
100: Support part 200:
230: processing hole 311: source supply line
411: temperature elevation gas supply line 700: temperature control unit

Claims (19)

1. An apparatus for depositing a film on a workpiece supported in the atmosphere,
A chamber part disposed in the atmosphere, wherein a processing hole is formed on a surface facing the processing object, and a processing space is provided between the processing object and the processing object;
A source supply line extending to the inside of the chamber portion and having an outlet portion opened at least at one side of the inner circumferential surface of the processing hole; And
Wherein the processing hole is formed to extend in a direction toward the processing hole from the inside of the chamber portion, and an outlet portion penetrates the processing hole obliquely in a direction toward a central portion of the processing space to contact one edge of the processing space, And a temperature elevation gas supply line which is opened at one surface of the chamber part so as to overlap the deposition chamber. The method according to claim 1,
And a purge gas supply line extending to the inside of the chamber portion and having an outlet portion wound around the outside of the source supply line on one surface of the chamber portion. The method of claim 2,
And an exhaust line formed to extend into the interior of the chamber part, wherein an inlet part surrounds at least one of an inner side and an outer side of the purge gas supply line on one side of the chamber part. The method according to claim 1,
A laser part formed to be capable of irradiating laser to the processing space;
A source supply connected to the source supply line;
A temperature elevation gas supply unit connected to the temperature elevation gas supply line; And
And a temperature control unit for controlling the temperature of the temperature-elevating gas supplied to the temperature-elevating gas supply unit corresponding to the deposition temperature of the source supplied from the source supply unit. The method of claim 3,
A purge gas supply unit connected to the purge gas supply line;
A first exhaust unit connected to a first exhaust line that surrounds at least a part of the processing hole inside the purge gas supply line of the exhaust line;
And a second exhaust unit connected to a second exhaust line which surrounds and surrounds the outside of the purge gas supply line of the exhaust line. The method according to claim 1,
Wherein the processing hole is opened from one side of the chamber part to the bottom side and connected to the upper part of the processing space.
delete 1. A method for depositing a film on a workpiece supported in the atmosphere,
A process of preparing a treatment product in the air;
Controlling the temperature by injecting a heating gas into the processing space of the processed product;
Spraying a source into the processing space of the processed material; And
And irradiating a laser on one side of the processed product to form a film,
The process of controlling the temperature includes:
Injecting the temperature-rising gas in a downward slope in a direction toward a central portion of the processing space from one edge of the processing space to induce a flow of the temperature-rising gas passing through a central portion of the processing space; And
And passing the flow of the temperature-rising gas through a processing-material defective position in the center of the processing space to remove residual foreign matter. The method of claim 8,
Further comprising the step of injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the processing space from the outside air. The method of claim 8,
And discharging at least one of reactants, products and unreacted materials from at least one of the interior and the exterior of the processing space. delete delete The method of claim 8,
The process of controlling the temperature includes:
Discharging the temperature-rising gas from at least the other side of the edge of the processing space and inducing a flow of the temperature-rising gas passing through the center of the processing space; And
Further comprising the step of injecting a purge gas into the processing object so as to surround the outside of the processing space to isolate the flow of the heating gas from the outside air. The method of claim 8,
The process of forming the film comprises:
And forming a film on the open defect of the processed product to repair defects. 15. The method of claim 14,
The process of forming the film comprises:
Spraying a heated gas into the processing space of the processing object to control the temperature of the repaired area of the processing object. The method according to any one of claims 8 to 10 and claims 13 to 15,
Wherein the temperature elevation gas is heated to a temperature range corresponding to the deposition temperature of the source and is injected into the processing space of the processed material. 18. The method of claim 16,
Wherein the temperature elevating gas is heated to a temperature ranging from 25 캜 to 50 캜 and is injected into a processing space of the processed material. The method of claim 8,
Wherein the source comprises a metal source. The method of claim 8,
Wherein the temperature elevating gas comprises air.
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