KR101640884B1 - Probe and probe module for semiconductor inspection which have a multilayer coatings - Google Patents

Probe and probe module for semiconductor inspection which have a multilayer coatings Download PDF

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Publication number
KR101640884B1
KR101640884B1 KR1020150176176A KR20150176176A KR101640884B1 KR 101640884 B1 KR101640884 B1 KR 101640884B1 KR 1020150176176 A KR1020150176176 A KR 1020150176176A KR 20150176176 A KR20150176176 A KR 20150176176A KR 101640884 B1 KR101640884 B1 KR 101640884B1
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KR
South Korea
Prior art keywords
probe
layer
coating
main body
semiconductor inspection
Prior art date
Application number
KR1020150176176A
Other languages
Korean (ko)
Inventor
김정엽
이승모
김광섭
Original Assignee
한국기계연구원
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Priority to KR1020150176176A priority Critical patent/KR101640884B1/en
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Publication of KR101640884B1 publication Critical patent/KR101640884B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07371—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate card or back card with apertures through which the probes pass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Abstract

The present invention relates to a probe module for a probe card for inspecting a defect of a semiconductor chip, and more particularly, to a probe module for a probe card for inspecting a defect of a semiconductor chip, And more particularly, to a probe for a semiconductor inspection and a probe module.

Description

TECHNICAL FIELD [0001] The present invention relates to a probe for a semiconductor inspection having a multilayer coating and a probe module,

The present invention relates to a probe module for a probe card for inspecting a defect of a semiconductor chip, and more particularly, to a probe module for a probe card for inspecting a defect of a semiconductor chip, And more particularly, to a probe for a semiconductor inspection and a probe module.

The semiconductor chip should be inspected for defects at each process step to increase the yield, and electrical inspection is performed using the probe card in the state of the wafer before packaging. According to the inspection result, only good products are packaged, and after packaging, electrical inspection is carried out using sockets. The probe card is classified into a cantilever type and a vertical type according to the arrangement of pads formed on the semiconductor chip.

The memory-type semiconductor chip has a pad arrangement arranged in two rows in the center, and the image sensor type semiconductor chip has a pad arrangement arranged along the outline. In the case of the memory type semiconductor chip and the image sensor type semiconductor chip, a cantilever type probe card is used. On the other hand, the system semiconductor chip has a two-dimensionally arranged pad arrangement, in which case only a vertical probe card can be used.

In recent years, a three-dimensional IC chip has been made by stacking various types of semiconductor chips using a through silicon via (TSV). In the case of such a three-dimensional IC chip, the pitch of the pads is 40 μm or less, and the pads are arrayed two-dimensionally. In this case, only a fine pitch vertical probe can be supported, and development thereof is required.

Particularly, as the size of a semiconductor chip is reduced and integrated, the size and pitch of a probe for inspecting it are getting smaller. The probe is subjected to a contact load in accordance with an overdrive applied when the probe is in contact with a pad, a pillar, or a bump of the semiconductor chip. Basically, probes are used repeatedly and their mechanical properties should be maintained without plastic deformation even if they are used over a million times. The magnitude of the contact load required for the probes depends on the type of semiconductor chip, and in the case of semiconductor chips with recent Cu pillar, a relatively small contact load between 100 μm and 1-2 gf is required. This is because a copper pillar is used for packaging in a subsequent process, so that damage due to the contact load should not occur. A guide plate having a square or circular hole is used for the vertical probe module. When the overdrive is applied to the probe, the probe and the guide plate come into contact with each other to generate a frictional force. The resulting frictional force is a major component of the probe contact load. In order to realize a probe having a relatively low contact load, it is necessary to reduce such frictional force.

Also, the magnitude of the current used in the inspection of the semiconductor chip does not change, but the applied current density increases as the size and pitch of the probe become smaller. As the current density increases, resistance heating phenomenon (Joule heating) occurs and the mechanical properties are deteriorated due to the increase of temperature. In case of a severe case, the problem of melting (burnt) occurs. Therefore, the heat generated by the probe should be minimized and the generated heat should be released quickly so that the temperature rise is minimized. For this purpose, the requirements of the probe allowable current value must be satisfied by using a probe material having excellent electric conductivity and thermal conductivity.

In addition, when the pitch of the probe is very small, contact with the probe adjacent to the probe is generated, and a method for solving the short is required.

Korean Patent Laid-Open Publication No. 2015-0031371 (published on March 24, 2015)

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a multi-layered coating for multi- A probe and a probe module.

In particular, the present invention provides a probe for semiconductor inspection and a probe module having a multilayer coating which improves the allowable current while maintaining the mechanical characteristics of the fine pitch probe, and has an electrical insulating layer on the outer surface and a reduced frictional force between the guide plate and the contact portion.

A semiconductor inspection probe having a multilayer coating according to the present invention is a probe for semiconductor inspection, comprising: a main body; And a multi-layered coating layer formed on the outer surface of the main body; .

Further, the coating layer is formed on the entire surface or a part of the main body.

At this time, the main body of the main body is made of a nickel compound, and the first layer formed at the innermost corner of the coating layer is gold or copper, platinum, palladium, silver .

The second layer formed on the outermost layer of the coating layer may be one selected from the group consisting of aluminum oxide, graphene, graphene oxide, graphite, molybdenum disulfide, molybdenum disulfide metal compound , DLC, nanocrystalline diamond, Teflon, Or more.

The coating layer includes a third layer formed between the first layer and the second layer and having a hardness higher than that of the first layer and a hardness lower than that of the second layer.

The second layer and the third layer may have a structure in which the layers are repeatedly laminated, and the third layer may be composed of a single layer or a plurality of layers.

The third layer is made of platinum or platinum and the second layer is made of aluminum oxide.

The coating layer of the probe may be formed by an immersion coating method, a chemical vapor deposition method, an electrolytic plating method, an electroless plating method, or an atomic layer deposition method.

A probe module for semiconductor inspection having a multilayer coating according to the present invention includes: a probe having a probe portion formed at the other end thereof and spaced apart from the probe; A first guide having a plurality of first through holes through which the other end of the probe passes, and the other end of the probe being fitted so that the other end of the probe is exposed; A second guide having a plurality of second through holes through which one end of the probe passes, and one end of the probe being fitted to the probe so that one end of the probe is exposed; .

At this time, the probe module has the second layer formed on the inner circumferential surface of the first or second through hole.

The probe and the probe module for semiconductor inspection having the multilayer coating according to the present invention having the above-described structure can improve the allowable current, have an electrical insulation function, minimize the friction with the guide plate, It is possible to apply the present invention to a test of whether or not a semiconductor chip having a minute size is defective as the current limit or the contact load limit is overcome.

1 is a front view of a probe card to which a probe module of the present invention is applied
2 is a cross-sectional view of a probe module according to an embodiment of the present invention.
3 is a perspective view of an entire probe according to an embodiment of the present invention.
Figure 4 is a cross-sectional view of a probe according to one embodiment of the present invention.
Figure 5 is a cross-sectional view of a probe according to another embodiment of the present invention.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a front view of a probe card A to which a probe module 1000 according to an embodiment of the present invention is applied. FIG. 2 is a sectional view of a probe module 1000 according to an embodiment of the present invention. . As shown in the figure, a plurality of probes 100 may be spaced apart from each other by a predetermined distance along the surface direction of the object S to be inspected, and the plurality of spaced apart probes 100 may be arranged in the guide 200 And 300, respectively. Therefore, the other end of the plurality of probes 100 provided with the probe portion at the other end is electrically contacted with the object S to be inspected to detect an electrical signal. The electrical signal detected from the other end of the probe 100 is transmitted to the substrate 2000 connected to one end of the probe 100 to monitor whether the inspection object S is defective or not.

At this time, the probe 100 comes into contact with the object to be inspected under a constant load. As shown in FIG. 2, in a state where the probes 100 are aligned at regular intervals, The probe module 1000 includes a first guide 300 and a second guide 200. [

The first guide 200 is formed in a plate shape having a large thickness and a plurality of first through holes 210 are formed along the surface direction so that the other end of the probe 100 is penetrated. Accordingly, the probe 100 is fitted in the first through hole 210 of the first guide 200 so that the other end of the probe 100 is exposed.

The second guide 300 is formed in a plate shape having a large thickness and a plurality of second through holes 310 are formed along the surface direction so that one end of the probe 100 is penetrated. Therefore, the probe 100 is fitted to the second through hole 310 of the second guide 300 at the other end so that one end of the probe 100 is exposed.

FIG. 3 is an overall perspective view of a probe 100 according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view of a probe 100 according to an embodiment of the present invention. As shown in the figure, the probe 100 of the present invention may be composed of a vertical probe or a co-current probe so that the whole area of the semiconductor can be inspected.

In addition, the probe 100 of the present invention is applied to the probe 100 having a small diameter so that it can be inspected for the defectiveness of the fine semiconductor. Particularly, the probe 100 is improved in the allowable current density of the probe 100, The first through hole 210 and the second through hole 210 have the following characteristics.

The probe 100 of the present invention is constructed by applying a multilayer coating structure to the base material 110. That is, the probe 100 includes a base material 110, a first layer L1 coated on the outer surface of the base material 110, and a second layer L2 coated on the outer surface of the first layer L1. do.

The base material 110 may be made of a nickel compound (NiX), which is a common probe material. The first layer L1 may be gold (Au), copper (Cu), platinum (Pt), palladium (Pd), or silver (Au) having a higher electrical conductivity than the base material 110. In addition, the second layer (L2) comprises a first layer (L1), and a small aluminum oxide friction coefficient than the base material (110) (Aluminium Oxide, Al 2 O 3), graphene (Gr aphene), graphene oxide (Graphene oxide), graphite (graphite), molybdenum disulfide (MoS 2), molybdenum disulfide metal compound (Au-MoS 2, Ti- MoS 2), DLC (diamond-like carbon), nanocrystalline diamond, Teflon or silicon nitride (SiN ). ≪ / RTI >

FIG. 5 is a perspective view and a cross-sectional view of a probe 100 according to another embodiment of the present invention.

Since the first layer of the probe 100 according to an embodiment of the present invention is made of a material that is smoother than the second layer, the second layer may be deformed or damaged. Therefore, the probe 100 according to the present embodiment has the following structure And has the same characteristic configuration.

The probe 100 is constructed by applying a multi-layer coating structure to the base material 110. That is, the probe 100 includes a base material 110 and coating layers L1 to L3 coated on an outer surface of the base material 110. [ At this time, the first layer (L1) is coated on the innermost angle of the coating layer, and the second layer (L2) is coated on the outermost layer of the coating layer. The third layer L3 may be coated between the first layer L1 and the second layer L2 to prevent deformation and damage of the second layer L2. The first layer L1 may be gold (Au), copper (Cu), platinum (Pt), palladium (Pd), or silver (Au) having a higher electrical conductivity than the base material 110.

The second layer (L2) is made of aluminum oxide (Al 2 O 3).

The third layer L3 may have a hardness higher than that of the first layer L1 and a hardness lower than that of the second layer L2. For example, the third layer L3 is made of platinum (Pt) when it is made of a single layer, and made of platinum (Pt) and a polymer when it is made of a plurality of layers.

At this time, the third layer L3 and the second layer L2 may be stacked repeatedly.

The coating layer of one embodiment and another embodiment described above can be formed by using electroplating, electroless plating, or atomic layer deposition.

In the probe module shown in FIG. 2, the second layer L2 described above is also coated on the inner circumferential surface of the first through hole 210 or the second through hole 220 to minimize the frictional force with the probe 100 .

The technical idea should not be construed as being limited to the above-described embodiment of the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, such modifications and changes are within the scope of protection of the present invention as long as it is obvious to those skilled in the art.

A: Probe card
1000: Probe module
100: probe 110: base material
L1: first layer L2: second layer
L3: Third layer
200: first guide 210: first through hole
300: second guide 310: second through hole
2000: substrate
S: subject to inspection

Claims (10)

A probe for semiconductor inspection,
Main body; And
A three-layer or more multilayered coating layer formed on the outer surface of the main body; ≪ / RTI >
A first layer formed at the innermost corner of the coating layer and having a higher electrical conductivity than the main body;
A second layer formed at an outermost part of the coating layer and having a lower coefficient of friction than the first layer; And
A third layer formed between the first layer and the second layer, the third layer having a higher hardness than the first layer and a lower hardness than the second layer;
And a multilayer coating.
The method according to claim 1,
Wherein the coating layer is formed on the entire surface or a part of the main body.
The method according to claim 1,
Wherein the main body of the main body is made of a nickel compound, and the first layer is made of gold or copper, platinum, palladium, silver Wherein the probe has a multilayer coating.
The method of claim 3,
Wherein the second layer is at least one selected from aluminum oxide, graphene, graphene oxide, graphite, molybdenum disulfide, molybdenum disulfide metal compound , DLC, nanocrystalline diamond, Teflon and silicon nitride. And a probe for semiconductor inspection.
delete The method according to claim 1,
Wherein the second layer and the third layer are made of a structure that is repeatedly laminated, and the third layer is composed of a single layer or a plurality of layers.
The method according to claim 6,
Wherein the third layer is platinum or platinum and a polymer, and the second layer is aluminum oxide.
The method according to claim 1,
A probe for semiconductor inspection having a multilayer coating using an immersion coating method, a chemical vapor deposition method, an electrolytic plating method, an electroless plating method, and an atomic layer deposition method.
The probe module according to claim 1,
A probe having a probe portion formed at the other end thereof and spaced apart from the probe;
A first guide having a plurality of first through holes through which the other end of the probe passes, and the other end of the probe being fitted so that the other end of the probe is exposed; And
A second guide having a plurality of second through holes through which one end of the probe passes, and one end of the probe being fitted to the probe so that one end of the probe is exposed; , ≪ / RTI &
And a second layer formed on an inner peripheral surface of the first or second through hole. delete
KR1020150176176A 2015-12-10 2015-12-10 Probe and probe module for semiconductor inspection which have a multilayer coatings KR101640884B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230138214A (en) 2022-03-23 2023-10-05 (주) 코스2 Insulation coating method for contact pin of semiconductor test socket

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980067061A (en) * 1997-01-31 1998-10-15 남재우 Method of manufacturing probe needle
KR20100002991A (en) * 2008-06-30 2010-01-07 장경규 Needle used for probe card
KR20100032150A (en) * 2008-09-17 2010-03-25 한국기계연구원 Micro contact probe coated with carbon nano tube and febrication method thereof
KR20150031371A (en) 2013-09-13 2015-03-24 한국기계연구원 Probe module and manufacturing method of probe module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980067061A (en) * 1997-01-31 1998-10-15 남재우 Method of manufacturing probe needle
KR20100002991A (en) * 2008-06-30 2010-01-07 장경규 Needle used for probe card
KR20100032150A (en) * 2008-09-17 2010-03-25 한국기계연구원 Micro contact probe coated with carbon nano tube and febrication method thereof
KR20150031371A (en) 2013-09-13 2015-03-24 한국기계연구원 Probe module and manufacturing method of probe module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230138214A (en) 2022-03-23 2023-10-05 (주) 코스2 Insulation coating method for contact pin of semiconductor test socket

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