KR101341725B1 - Semiconductor device bonding wire and wire bonding method - Google Patents
Semiconductor device bonding wire and wire bonding method Download PDFInfo
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- KR101341725B1 KR101341725B1 KR1020107020084A KR20107020084A KR101341725B1 KR 101341725 B1 KR101341725 B1 KR 101341725B1 KR 1020107020084 A KR1020107020084 A KR 1020107020084A KR 20107020084 A KR20107020084 A KR 20107020084A KR 101341725 B1 KR101341725 B1 KR 101341725B1
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- wire
- outer layer
- bonding
- copper
- concentration
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- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
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Abstract
재료비가 저렴하고, 볼 접합성, 열 사이클 시험 또는 리플로우 시험의 신뢰성이 우수하며, 보관 수명이 양호하고, 협피치용 세선화에도 적응하는 구리계 본딩 와이어를 제공하는 것을 목적으로 한다. 구리를 주성분으로 하는 심재와, 상기 심재 위에 설치된, 상기 심재와 성분 및 조성의 어느 하나 또는 두 가지가 모두 다른 금속 M과 구리를 함유하는 외층을 가진 본딩 와이어로서, 상기 외층의 두께가 0.021 내지 0.12 ㎛인 것을 특징으로 하는 반도체 장치용 본딩 와이어. It is an object of the present invention to provide a copper-based bonding wire having a low material cost, excellent ball bonding, thermal cycle test or reflow test reliability, good shelf life, and adaptation to narrow pitch for narrow pitch. A bonding wire having a core material containing copper as its main component and an outer layer containing metal M and copper, which are disposed on the core material, either one or both of the core material and its composition and composition, wherein the thickness of the outer layer is 0.021 to 0.12. Bonding wire for semiconductor devices, characterized by the above-mentioned.
Description
본 발명은 반도체 소자 위의 전극과 회로 배선 기판(리드 프레임, 기판, 테이프 등)의 배선을 접속하기 위해 이용되는 반도체 장치용 본딩 와이어 및 그 본딩 와이어의 접속방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire for a semiconductor device and a method for connecting the bonding wire used for connecting an electrode on a semiconductor element and wiring of a circuit wiring board (lead frame, substrate, tape, etc.).
현재, 반도체 소자 위의 전극과 외부 단자 사이를 접합하는 반도체 장치용 본딩 와이어(이하, 본딩 와이어)로서, 선 직경 20 내지 50㎛ 정도의 세선(본딩 와이어)이 주로 사용되고 있다. 본딩 와이어 접합에는 초음파 병용 열 압착 방식이 일반적이고, 범용 본딩 장치, 본딩 와이어를 그 내부에 통과시켜 접속에 사용하는 캐필러리 지그 등이 사용된다. 와이어 선단을 아크 입열로 가열 용융하고, 표면장력에 의해 볼을 형성시킨 후에, 150 내지 300℃의 범위 내에서 가열한 반도체 소자의 전극 위에 이 볼부를 압착 접합시킨다. 그런 후에, 직접 와이어를 외부 리드 측에 초음파 압착에 의해 접합시킨다. At present, a thin wire (bonding wire) having a wire diameter of about 20 to 50 µm is mainly used as a bonding wire (hereinafter, referred to as a bonding wire) for a semiconductor device that joins an electrode on a semiconductor element and an external terminal. As the bonding wire bonding, a thermocompression bonding method for an ultrasonic bottle is generally used, and a general bonding device, a capillary jig, and the like used for connection by passing a bonding wire therein are used. After the wire tip is melted by arc heat input to form a ball by surface tension, the ball part is press-bonded on the electrode of the semiconductor element heated within the range of 150 to 300 ° C. Thereafter, the wire is directly bonded to the outer lead side by ultrasonic pressing.
최근, 반도체 실장의 구조·재료·접속 기술 등은 급속하게 다양화하고 있는데, 예를 들면, 실장 구조에서는 현행의 리드 프레임을 사용한 QFP(Quad Flat Packaging)에 추가하여, 기판, 폴리이미드 테이프 등을 사용하는 BGA(Ball Grid Array), CSP(Chip Scale Packaging) 등의 새로운 형태가 실용화되고, 루프성, 접합성, 양산 사용성 등이 더 향상된 본딩 와이어가 요구되고 있다. 그러한 본딩 와이어의 접속 기술에서도, 현재 주류의 볼/웨지 접합 외에, 협피치화에 적합한 웨지/웨지 접합에서는 2 개의 부위에서 직접 본딩 와이어를 접합하기 위하여, 세선의 접합성 향상이 요구된다. In recent years, the structure, material, and connection technology of semiconductor packaging are rapidly diversifying. For example, in the packaging structure, substrates, polyimide tapes, and the like are added to QFP (Quad Flat Packaging) using current lead frames. New forms, such as ball grid array (BGA) and chip scale packaging (CSP), have been put into practical use, and bonding wires with improved loopability, bonding properties, and mass production usability are required. Even in such a bonding wire connection technique, in addition to the mainstream ball / wedge bonding, wedge / wedge bonding suitable for narrow pitching is required to improve the bondability of thin wires in order to bond the bonding wire directly at two sites.
본딩 와이어의 접합 상대가 되는 재질도 다양화하고 있고, 실리콘 기판 위의 배선, 전극 재료로는 종래의 Al 합금에 추가하여, 더 미세한 배선에 적합한 구리가 실용화되어 있다. 또한, 리드 프레임 위에는 Ag 도금, Pd 도금 등이 실시되어 있고, 또한, 수지 기판, 테이프 등의 위에는 구리 배선이 실시되고, 그 위에 금 등의 귀금속 원소 및 그 합금 막이 도포되어 있는 경우가 많다. 이러한 여러 가지 접합 상대에 따라, 와이어의 접합성, 접합부 신뢰성을 향상시킬 것이 요구된다. Materials to be joined to bonding wires have also been diversified. In addition to conventional Al alloys, copper suitable for finer wiring has been put into practical use as wirings and electrode materials on silicon substrates. Moreover, Ag plating, Pd plating, etc. are given on the lead frame, copper wiring is given on the resin board | substrate, a tape, etc., and precious metal elements, such as gold, and the alloy film are apply | coated on it in many cases. According to such various joining partners, it is required to improve the joining property of a wire and the reliability of joining part.
본딩 와이어 소재는 지금까지 고순도 4N계(순도>99.99 질량%)의 금이 주로 사용되어 왔다. 그러나, 금은 고가이기 때문에, 재료비가 저렴한 다른 종류의 금속 본딩 와이어가 요망되고 있다. As for the bonding wire material, gold of high purity 4N type (purity> 99.99 mass%) has been mainly used until now. However, since gold is expensive, other types of metal bonding wires with low material costs are desired.
와이어 본딩 기술에서는 볼 형성 시에 진구성이 양호한 볼을 형성하고, 그 볼부와 전극과의 접합부에서 충분한 접합 강도를 얻는 것이 중요하다. 또한, 접합 온도의 저온화, 본딩 와이어의 세선화 등에 대응하기 위해서도, 회로 배선 기판 위의 배선부에 본딩 와이어를 웨지 접속한 부위에서의 접합 강도, 인장 강도 등도 필요하다. In the wire bonding technique, it is important to form a ball having a good true structure at the time of ball formation, and to obtain sufficient bonding strength at the junction between the ball portion and the electrode. In addition, in order to cope with lowering of the joining temperature, thinning of the bonding wire, and the like, the bonding strength, the tensile strength, and the like at the portion where the bonding wire is wedge-connected to the wiring portion on the circuit wiring board are also required.
고점성의 열 경화 에폭시 수지가 고속 주입되는 수지 밀봉 공정에서는 본딩 와이어가 변형하여 인접 와이어와 접촉하는 것이 문제가 되고, 그 밖에도, 협피치 화, 장와이어화, 세선화도 진행되는 가운데, 수지 밀봉 시에 와이어 변형을 조금이라도 억제할 것이 요구되고 있다. 와이어 강도의 증가에 의해, 이와 같은 변형을 어느 정도 제어할 수 있으나, 루프 제어가 곤란해지거나, 접합 시에 강도가 저하하는 등의 문제가 해결되지 않으면 실용화는 어렵다. In the resin sealing process in which a high-viscosity thermosetting epoxy resin is injected at high speed, the bonding wire deforms and comes into contact with adjacent wires. In addition, narrow pitch, long wire, and thinning are also performed. It is desired to suppress any wire deformation at all. Such deformation can be controlled to some extent by increasing the wire strength. However, practical use is difficult unless problems such as difficulty in loop control or a decrease in strength during joining are solved.
또한, 본딩 와이어가 접속되어 실장된 반도체 소자가 실제로 사용될 때의 장기 신뢰성도 중요하다. 특히 자동차에 탑재되는 반도체 소자 등에서는 엄격한 안전성을 확보하기 위하여, 고온, 고습, 열 사이클 등 가혹한 환경에서의 높은 신뢰성이 요구된다. 이와 같은 종래에 없는 가혹한 환경에서도, 본딩 와이어가 접속된 접합부에서는 열화하지 않고, 높은 신뢰성이 유지되어야 한다. In addition, long-term reliability when the semiconductor element mounted by bonding wires is actually used is also important. In particular, in semiconductor devices mounted in automobiles, in order to ensure strict safety, high reliability in harsh environments such as high temperature, high humidity, and thermal cycles is required. Even in such a harsh environment, which is not conventional, the high reliability must be maintained without deterioration at the joint to which the bonding wires are connected.
상기 요구를 만족하는 와이어 특성으로서 본딩 공정에 있어서의 루프 제어가 용이하고, 또한 전극부, 리드부에의 접합성도 향상되어 있으며, 본딩 이후의 수지밀봉 공정에 있어서의 과잉의 와이어 변형을 억제하는 것, 나아가 접속부의 장기 신뢰성이나 가혹한 환경 하에서의 접합부 안정성 등의 종합적인 특성을 만족할 것이 요망된다. As a wire characteristic satisfying the above requirements, the loop control in the bonding step is easy, and the bonding property to the electrode part and the lead part is also improved, and the excessive wire deformation in the resin sealing step after bonding is suppressed. Furthermore, it is desired to satisfy the comprehensive characteristics such as long-term reliability of the connection portion and joint stability under severe environment.
재료비가 저렴하고, 전기 전도성이 우수하며, 볼 접합, 웨지 접합 등도 높이기 위하여, 구리를 소재로 하는 본딩 와이어가 개발되었고, 특허 문헌 1 등에 개시되어 있다. 그러나, 강의 본딩 와이어에서는 와이어 표면의 산화에 의하여 접합 강도가 저하하는 것이나, 수지 밀봉되었을 때에 와이어의 표면 부식 등이 일어나기 쉬운 것이 문제가 된다. 이들이 구리의 본딩 와이어의 실용화가 진행되지 않는 원인이 되기도 한다. In order to reduce the material cost, to be excellent in electrical conductivity, and to increase ball bonding, wedge bonding, and the like, a bonding wire made of copper has been developed, and is disclosed in Patent Document 1 and the like. However, in the bonding wire of steel, there arises a problem that the bonding strength decreases due to the oxidation of the wire surface, or the surface corrosion of the wire is likely to occur when the resin is sealed. These may be a cause for which the practical use of the copper bonding wire does not advance.
구리계 본딩 와이어에서는 와이어 선단을 용융하여 볼부를 형성할 때에, 산화를 억제하기 위하여, 가스를 와이어 선단에 분사하면서 본딩을 실시한다. 현재는 구리계 본딩 와이어의 볼 형성 시의 분위기 가스로서 수소 5 vol%를 함유하는 질소 가스가 일반적으로 사용되고 있다. 특허 문헌 2에는 구리선을 구리 또는 구리 합금 리드 프레임에 접속할 때에, 5 vol% H2+N2의 분위기로 접속하는 것이 개시되어 있다. 또한, 비특허 문헌 1에는 구리 본딩 와이어의 볼 형성에 있어서 5 vol% H2+N2 가스에서는 볼 표면의 산화를 억제할 수 있기 때문에 N2 가스보다도 바람직한 것이 보고되어 있다. 현재에는 구리계 본딩 와이어를 이용할 때 사용되는 가스로서 5 vol% H2+N2 가스가 표준화되어 있다. In the copper-based bonding wire, bonding is performed while injecting a gas into the wire tip in order to suppress oxidation when the wire tip is melted to form the ball portion. Currently, nitrogen gas containing 5 vol% of hydrogen is generally used as an atmosphere gas at the time of ball formation of a copper-based bonding wire. Patent Literature 2 discloses connecting a copper wire in an atmosphere of 5 vol% H 2 + N 2 when connecting a copper wire to a copper or copper alloy lead frame. In addition, Non-Patent Document 1 discloses 5 vol% H 2 + N 2 in the ball formation of a copper bonding wire. N 2 because the gas can inhibit oxidation of the surface of the ball It is reported that it is more preferable than gas. Currently, 5 vol% H 2 + N 2 gas is standardized as a gas used when using a copper-based bonding wire.
구리 본딩 와이어의 표면 산화를 막는 방법으로서 특허 문헌 3에는 금, 은 백금, 팔라듐, 니켈, 코발트, 크롬, 티타늄 등의 귀금속이나 내식성 금속으로 구리를 피복한 본딩 와이어가 제안되어 있다. 또한, 볼 형성성, 도금액의 열화 방지 등의 점에서, 특허 문헌 4에는 구리를 주성분으로 하는 심재, 이 심재 상에 형성된 구리 이외의 금속으로 이루어지는 다른 종류의 금속층 및 이 다른 종류의 금속층 위에 형성되고, 구리보다 고융점인 내산화성 금속으로 이루어지는 피복층의 구조를 한 본딩 와이어가 제안되어 있다. 특허 문헌 5에는 구리를 주성분으로 하는 심재와, 이 심재 위에 심재와 성분 또는 조성의 어느 하나 또는 두 가지가 모두 다른 금속과 구리를 함유하는 외피층을 가지고, 그 외피층의 두께가 0.001 내지 0.02 ㎛의 박막 본딩 와이어가 제안되어 있다. As a method of preventing surface oxidation of a copper bonding wire, Patent Document 3 proposes a bonding wire coated with copper with a noble metal or a corrosion resistant metal such as gold, silver platinum, palladium, nickel, cobalt, chromium or titanium. Further, in view of ball formability and prevention of deterioration of the plating solution, Patent Document 4 discloses a core material containing copper as a main component, a different kind of metal layer made of a metal other than copper formed on the core material, and a different kind of metal layer. The bonding wire which has the structure of the coating layer which consists of an oxidation resistant metal which is higher melting | fusing point than copper is proposed. Patent document 5 has a core material containing copper as a main component, and an outer skin layer containing metal and copper which are different from the core material, and either or both of the core material and the composition, and the thickness of the outer layer is 0.001 to 0.02 µm. Bonding wires have been proposed.
특허 문헌 1: 일본 공개 특허 공보 소61-99645호 Patent Document 1: Japanese Unexamined Patent Publication No. 61-99645
특허 문헌 2: 일본 공개 특허 공보 소63-24660호 Patent Document 2: Japanese Unexamined Patent Publication No. 63-24660
특허 문헌 3: 일본 공개 특허 공보 소62-97360호 Patent Document 3: Japanese Laid-Open Patent Publication No. 62-97360
특허 문헌 4: 일본 공개 특허 공보 2004-64033호 Patent Document 4: Japanese Unexamined Patent Publication No. 2004-64033
특허 문헌 5: 일본 공개 특허 공보 2007-12776호Patent Document 5: Japanese Unexamined Patent Publication No. 2007-12776
비특허 문헌 1: “Copper Ball Bonding for Fine Pitch, High I/O Devices": P. Devlin, Lee Levine, 38th International Symposium on Microelectronics (2005), P. 320-324. [Non-Patent Document 1] “Copper Ball Bonding for Fine Pitch, High I / O Devices”: P. Devlin, Lee Levine, 38th International Symposium on Microelectronics (2005), P. 320-324.
종래의 단층 구조의 구리계 본딩 와이어(피복하지 않은 구리계 본딩 와이어를 말하는 것으로, 와이어 표면에 얇은 자연 산화막 층 등이 형성되어 있는 경우가 있다. 이하, 단층 구리 와이어라고 한다.)의 실용상의 문제로서 와이어 표면의 산화, 접합 강도의 저하 등이 일어나기 쉬운 것을 들 수 있다. 이에 구리 본딩 와이어의 표면 산화를 막는 수단으로서 와이어 표면에 귀금속이나 내산화성의 금속을 피복하는 것이 가능하다. Practical Problems of Conventional Single Layer Copper Bonding Wire (Non-coated Copper Bonding Wire, in which a thin natural oxide layer may be formed on the surface of the wire, hereinafter referred to as a single layer copper wire.) Examples thereof include oxidation of the wire surface, a decrease in the bonding strength, and the like. As a means of preventing surface oxidation of the copper bonding wire, it is possible to coat a noble metal or an oxidation resistant metal on the surface of the wire.
반도체 실장의 고밀도화, 소형화, 박형화 등의 니즈를 고려하여, 본 발명자들이 평가해본 결과, 구리 본딩 와이어의 표면을 구리와 다른 금속으로 덮은 구조의 종래의 복층 구리 와이어(피복하지 않은 구리 와이어를 단층 구리 와이어라고 부르는 반면, 1층으로 이루어지는 피복층으로 피복한 상기 구리 와이어를 복층 구리 와이어라고 한다. 이하, 종래의 복층 구리 와이어라고 한다.)에서는, 후술하는 실용상의 문제가 많이 남아 있는 것이 판명되었다. Considering the needs of densification, miniaturization, and thinning of semiconductor mounting, the present inventors have evaluated that conventional multilayer copper wires having a structure in which the surface of the copper bonding wires are covered with copper and other metals (uncoated copper wires are single-layer copper While called a wire, the said copper wire coated with the coating layer which consists of one layer is called a multilayer copper wire (it is hereafter called conventional multilayer copper wire), and it turned out that many practical problems mentioned later remain.
종래의 복층 구리 와이어의 선단에 볼을 형성하였을 경우, 진구로부터 벗어나 편평 볼이 형성되거나, 볼 내부에 용융되지 않는 와이어가 남거나, 기포가 발생하는 것이 문제가 된다. 이와 같은 정상적이지 않은 볼부를 전극 위에 접합하면, 접합 강도의 저하, 칩 손상 등의 문제를 일으키는 원인이 된다. When a ball is formed at the tip of a conventional multilayer copper wire, it becomes a problem that a flat ball is formed out of the true sphere, a wire which does not melt inside the ball, or bubbles are generated. Bonding such an abnormal ball portion on the electrode may cause problems such as a decrease in bonding strength and chip damage.
종래의 복층 구리 와이어로 복잡한 루프 제어 등을 실시하면, 피복층과 구리와의 계면에서 박리하는 등, 루프 형상이 불안정하게 되는 것, 협피치 접속에서는 인접 와이어가 전기적 쇼트를 일으키는 것이 염려된다. When complex loop control or the like is performed with conventional multilayer copper wires, the loop shape becomes unstable, such as peeling off at the interface between the coating layer and copper, and there is a concern that adjacent wires may cause an electrical short in narrow pitch connection.
종래의 복층 구리 와이어에 의해 볼을 형성한 경우, 단층 구리 와이어 또는 현재 주류의 금 본딩 와이어를 사용한 경우보다, 볼 접합부의 형상 불량 및 접합 강도의 저하 등이 일어나기 쉬운 것이 실용상의 문제가 된다. 구체적인 불량 사례에서는 진구로부터 벗어난 편평 볼의 형성, 볼이 와이어에 대하여 기울어서 형성되는 심 어긋남 등이 발생하거나 볼 내부에 용융되지 않는 와이어가 남거나, 기포(블로우 홀)가 생기는 것이 문제가 되는 경우도 있다. 정상적이지 않은 볼부를 전극 위에 접합하면, 와이어 중심으로부터 벗어나서 볼이 변형되는 편심 변형, 진원으로부터 어긋나는 형상 불량으로서 타원 변형, 화변(花弁) 변형 등이 발생하여, 전극면으로부터 접합부가 삐져나와, 접합 강도의 저하, 칩 손상, 생산 관리상의 문제 등의 문제를 일으키는 원인이 된다. 초기 접합의 불량은 전술한 장기(長期) 신뢰성의 저하를 유발하는 경우도 있다. When balls are formed by conventional multilayer copper wires, it is a practical problem that shape defects and deterioration in bonding strength are more likely to occur than when single-layer copper wires or current mainstream gold bonding wires are used. Specific failure cases may include problems such as the formation of flat balls deviated from the true spheres, seam shifts formed by tilting the balls with respect to the wires, the remaining unmelted wires inside the balls, and the formation of bubbles (blow holes). have. When the non-normal ball portion is bonded on the electrode, eccentric deformation such that the ball deforms from the center of the wire and the shape is shifted from the circle, elliptic deformation, firefighting deformation, and the like are generated, and the bonding portion protrudes from the electrode surface. This can cause problems such as deterioration of the chip, chip damage, and production control problems. Poor initial bonding may cause the above-mentioned deterioration of long-term reliability.
종래의 복층 구리 와이어의 볼 접합에 관한 문제를 해결하는 수법으로서, 특허 문헌 4에는 외피 층의 두께를 0.001 내지 0.02 ㎛로 하는 것이 개시되어 있다. 여기에서의 외피 층은 농도 구배의 영역도 포함하고 있는데, 외피 층과 심재와의 경계는 금속 M의 농도가 10 mol% 이상인 경우도 기재되어 있다. 본 발명자들의 평가로는 이와 같이 외피 층의 두께를 박막화함으로써, 전술한 볼 접합부의 문제가 일부에서 개선되는 것은 관찰되었지만, 자동차에 탑재되는 반도체 소자 등의 용도로 새로운 환경 하에서 사용되는 경우에는 반드시 효과는 충분하지 않고, 오히려 외피 층의 두께를 얇게 할수록 편평 볼의 발생 빈도는 증가하는 것이 확인되었다. 또한, 박막화에 의해 와이어 웨지 접합의 향상이 충분하지 않고, 또한 후술하는 장기 신뢰성에 문제가 생기는 것이 확인되었다. As a method of solving the problem regarding the ball joint of the conventional multilayer copper wire, it is disclosed by patent document 4 to make thickness of an outer skin layer 0.001-0.02 micrometer. The skin layer here also includes a region of concentration gradient, and the boundary between the skin layer and the core is described even when the concentration of the metal M is 10 mol% or more. In the evaluation of the present inventors, it has been observed that the above-described problem of the ball joint is partially improved by thinning the thickness of the outer skin layer, but it is necessarily effective when used under a new environment for use in semiconductor devices or the like mounted on automobiles. It is confirmed that the frequency of occurrence of the flat ball increases as the thickness of the outer skin layer is not sufficient. In addition, it was confirmed that the improvement of the wire wedge bonding was not sufficient due to the thinning, and there was a problem in the long-term reliability described later.
새로운 가혹한 환경하에서의 평가로서, 구체적으로는, 다음과 같은 시험이 실시되고 있다. 즉, 단층 구리 와이어를 접속한 반도체의 신뢰성 시험에서는, 열 사이클 시험(TCT 시험: Temperature Cycle Test)에 있어서 웨지 접합부의 근방에서의 와이어 파단이 발생하는데, 그 불량 빈도가 금 본딩 와이어보다 높은 것이 최근에 문제가 되기 시작하였다. 또한, 땜납 리플로우 공정에서도, 마찬가지로 구리계 와이어의 접합부 파단이 발생하는 문제가 염려된다. 이것도 일종의 열 피로에 의한 와이어 파단인데, 최근의 환경 대응에서 급속히 실용화되고 있는 무연 땜납에서는 융점이 종래의 주석/납 땜납보다 높기 때문에, 열 변형이 문제가 되기 시작하였다. 이러한 와이어 파단의 원인은 반도체의 구성 부재인 밀봉 수지, 리드 프레임, 실리콘 칩 등의 열 팽창 차이에 기인하는 문제이다. 반도체 동작 시에 발열량의 증대, 사용 환경의 고온화나 온도 변화의 증대 등에 적용하려면, 구리계 본딩 와이어 TCT 시험에서의 와이어 파단을 개선하는 것이 향후 더 중요해질 것이다. As evaluation in a new harsh environment, specifically, the following test is performed. That is, in the reliability test of the semiconductor which connected the single | mono layer copper wire, the wire breakage generate | occur | produces in the vicinity of a wedge junction in a thermal cycle test (TCT test: Temperature Cycle Test), but the defect frequency is higher than a gold bonding wire in recent years. Started to be a problem. Moreover, also in the solder reflow process, the problem which the junction part fracture of a copper-type wire produces similarly is concerned. This is also a kind of wire rupture due to thermal fatigue. In lead-free solder, which has been rapidly put to practical use in recent years, thermal deformation has become a problem because the melting point is higher than that of conventional tin / lead solder. The cause of such wire breakage is a problem due to the difference in thermal expansion of a sealing resin, a lead frame, a silicon chip, and the like, which are components of the semiconductor. In order to apply to the increase in the amount of heat generated during the operation of the semiconductor, the high temperature of the use environment, the increase of the temperature change, etc., it will become more important to improve the wire breaking in the copper-based bonding wire TCT test in the future.
종래의 복층 구리 와이어에서는 TCT 시험에서의 불량 빈도가 단층 구리 와이어보다 약간 저감하고, 한편으로, 금 본딩 와이어와 비교하면 아직 떨어지는 것을 본 발명자들은 확인하였다. 예를 들면, 종래의 복층 구리 와이어이더라도, 전술한 외피 층의 두께가 0.001 내지 0.02 ㎛의 박막인 경우에는 TCT 시험에서의 개선 효과는 충분하지 않았다. In the conventional multilayer copper wire, the inventors confirmed that the defect frequency in the TCT test was slightly lower than that of the single-layer copper wire, and on the other hand, it was still inferior to the gold bonding wire. For example, even in the conventional multilayer copper wire, the improvement effect in the TCT test was not sufficient when the thickness of the above-mentioned outer skin layer was a thin film of 0.001-0.02 micrometer.
단층 구리 와이어에서는 표면 산화가 진행되기 때문에, 대기 중에서의 보관 수명이 짧은 것이 사용하는 중에 문제가 된다. 종래의 금 본딩 와이어에서는 사용 전 또는 사용 도중에 1 개월 정도 보관하는 것이 가능하다. 단층 구리 와이어에서는 대기 중에 수 일간 보관되는 것만으로도, 웨지 접합성이 저하하거나 볼 형상이 불안정하게 되는 문제가 발생한다. 이것이 구리계 본딩 와이어의 작업성을 저하하는 요인이 된다. In single layer copper wire, since surface oxidation advances, the thing with short shelf life in air | atmosphere becomes a problem during use. In a conventional gold bonding wire, it is possible to store about 1 month before use or during use. In single-layer copper wires, even if they are stored for several days in the air, there is a problem that the wedge bondability is reduced or the ball shape becomes unstable. This is a factor that lowers the workability of the copper-based bonding wire.
종래의 복층 구리 와이어에서는 단층 구리 와이어보다 산화를 늦추는 효과를 기대할 수 있지만, 그 효과는 외층 또는 와이어 표면 근방에 있어서의 조성, 구조, 두께 등에 따라 크게 달라진다. 종래의 복층 구리 와이어의 구조의 적정화가 중요하다. 금 본딩 와이어와 동등한 작업성을 확보하려면, 예를 들면, 2 개월 정도 대기에서 보관한 후에도, 웨지 접합성, 루프 형상 등이 열화하지 않는 것이 보장될 필요가 있다. 이것은 단층 구리 와이어의 보관 수명에 비하면 수십 배의 수명 향상이 필요한 것으로, 구리를 주체로 하는 재료에 있어서는 상당히 엄격한 조건이 요구되는 것이다. In the conventional multilayer copper wire, the effect of slowing the oxidation can be expected from that of the single layer copper wire, but the effect greatly depends on the composition, structure, thickness, and the like in the outer layer or the wire surface vicinity. The optimization of the structure of the conventional multilayer copper wire is important. To ensure workability equivalent to gold bonding wires, for example, it is necessary to ensure that wedge bondability, loop shape and the like do not deteriorate even after being stored in the atmosphere for about two months. This requires tens of times the life improvement compared to the storage life of single-layer copper wire, and considerably stringent conditions are required for materials mainly composed of copper.
산화에 관련된 문제에서는 볼 형성시의 산화 억제도 구리 와이어의 중요한 과제이다. 종래의 단층 구리 와이어에서는, 볼 형성용 가스에서는, 5 vol% H2+N2 가스가 표준 가스로서 많이 사용되고 있다. 이 5 vol% H2+N2 가스를 사용함으로써, 공장 내에서 이 가스를 공급하려면 전용 배관 설치 비용이 필요하고, 혼합 가스의 러닝 코스트도 비교적 비싸다. 이들 제조 비용을 포함하는 합계 비용으로 비교하면, 와이어 소재로서 구리를 사용하더라도, 금 본딩 와이어에 비하여 비용상의 이점이 적은 경우도 있다. 이러한 가스 비용도 구리계 본딩 와이어가 보급되지 않는 요인의 하나이다. 또한, 수소를 5 vol%나 포함하기 때문에 안전 관리가 엄격하고, 작업성의 저하 등도 염려된다. In the problems related to oxidation, oxidation suppression at the time of ball formation is also an important problem of copper wire. In the conventional single layer copper wire, in the gas for ball formation, 5 vol% H 2 + N 2 Gas is widely used as a standard gas. This 5 vol% H 2 + N 2 By using gas, supplying this gas in a factory requires a dedicated pipe installation cost, and the running cost of the mixed gas is also relatively high. When compared with the total cost including these manufacturing costs, even if copper is used as the wire material, the cost advantage may be less than that of the gold bonding wire. This gas cost is also one of the factors that copper-based bonding wire is not spread. In addition, since 5 vol% of hydrogen is contained, safety management is strict, and workability is also deteriorated.
순 N2 가스만으로 할 경우, 비용 삭감 효과도 큰 폭으로 높아지고, 안전 관리상의 장해도 저하하는 등 사용자 측의 이점은 크다. 그러나, 종래의 단층 구리 와이어를 양산(量産)에서 사용할 때에, 사용이 곤란하다는 판단에 의하여, 순 N2 가스는 실용화되어 있지 않았다. 지금까지의 종래의 복층 구리 와이어의 경우에도, 5 vol% H2+N2 가스를 사용하는 것이 종합적으로 안정적인 생산성을 확보하기 쉽고, 순 N2 가스를 사용하면, 전술한 편심 볼이 발생하거나 볼 사이즈가 불안정하게 되는 등의 문제가 있었다. 순 N2 가스를 사용하더라도 높은 생산성, 신뢰성을 얻을 수 있는 종래의 복층 구리 와이어를 실현할 수 있다면, 구리계 본딩 와이어의 보급을 늦추는 장해가 적어져서, 실용화가 가속될 것으로 기대된다.Net N 2 When only gas is used, the cost reduction effect is also greatly increased, and the user's advantage is large, such as the failure in safety management. However, when using a conventional single layer copper wire in mass production, pure N 2 is judged to be difficult to use. The gas has not been put to practical use. 5 vol% H 2 + N 2 , even in the case of conventional multilayer copper wire The use of gas makes it easy to ensure stable productivity overall, and the use of pure N 2 gas causes problems such as the above-described eccentric balls or unstable ball size. Net N 2 If the conventional multilayer copper wire which can obtain high productivity and reliability even if using gas can be realized, the obstacle which slows the spread of copper-based bonding wire will be less, and it is anticipated that practical use will accelerate.
본 발명에서는 전술한 종래 기술의 문제를 해결하고, 종래의 기본 성능에 추가하여, 볼 접합성의 향상, 열 사이클 시험에서의 불량 저감, 와이어 보관 수명의 개선을 도모한 구리를 주체로 하는 반도체 장치용 본딩 와이어 및 상기 본딩 와이어의 와이어 본딩 방법을 제공하는 것을 목적으로 한다. The present invention solves the above-mentioned problems of the prior art and, in addition to the conventional basic performance, is mainly used for a semiconductor device mainly made of copper, which aims at improving ball bonding properties, reducing defects in thermal cycle tests, and improving wire storage life. An object of the present invention is to provide a bonding wire and a wire bonding method of the bonding wire.
과제를 해결하기 위한 수단Means for solving the problem
본 발명자들이 상기 문제를 해결하기 위하여 구리계 본딩 와이어를 예의 검토한 결과, 외층을 가지고, 특정 외층 두께에다가 특정 두께 범위로 하는 것이 유효한 것을 밝혀내었다. 더 효과적으로는 외층 및 심재 등의 조성, 구조 등의 제어가 유효한 것을 밝혀내었다. MEANS TO SOLVE THE PROBLEM As a result of earnestly examining a copper-based bonding wire in order to solve the said problem, it turned out that it is effective to have an outer layer and to make it into a specific thickness range in addition to a specific outer layer thickness. More effectively, it has been found that control of the composition, structure, etc. of the outer layer and the core material is effective.
본 발명은 상기 지견에 기초하여 이루어진 것으로, 이하의 구성을 요지로 한다. This invention is made | formed based on the said knowledge, and makes the following structures a summary.
청구항 1에 관한 본딩 와이어는 구리를 주성분으로 하는 심재와, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나, 또는 두 가지가 모두 다른 금속 M 및 구리를 함유하는 외층을 가진 반도체 장치용 본딩 와이어로서, 상기 외층의 두께가 0.021 내지 0.12 ㎛인 것을 특징으로 한다. The bonding wire according to claim 1 is a bonding wire for a semiconductor device having a core material containing copper as its main component and an outer layer containing metal M and copper, which are either different from the core material and the composition and composition, or both of which are provided on the core material. As the thickness of the outer layer is characterized in that 0.021 to 0.12 ㎛.
또한, 청구항 2에 관한 본딩 와이어는, 청구항 1에 있어서, 상기 외층을 구성하는 금속 M이 Au, Pd, Pt 및 Rh로부터 선택되는 1종 이상의 원소를 주성분으로 하는 것을 특징으로 한다. The bonding wire according to claim 2 is characterized in that the metal M constituting the outer layer has at least one element selected from Au, Pd, Pt, and Rh as a main component of claim 1.
또한, 청구항 3에 관한 본딩 와이어는 청구항 1 또는 2에 있어서, 상기 구리를 주성분으로 하는 심재가 P, B, Ir, Zr, Bi, Ti, Au, Ag, Sn 및 희토류 원소로부터 선택되는 1종 이상의 원소를 함유하고, 와이어 전체에서 차지하는 이 원소 농도가 총계로 0.0001 내지 0.03 mol%의 범위인 것을 특징으로 한다. In addition, in the bonding wire according to claim 3, at least one kind of the core material containing copper as a main component is selected from P, B, Ir, Zr, Bi, Ti, Au, Ag, Sn, and rare earth elements according to claim 1 or 2. It is characterized by containing an element and totaling this element concentration in the whole wire in the range of 0.0001 to 0.03 mol%.
또한, 청구항 4에 관한 본딩 와이어는 청구항 1 내지 3 중 어느 하나의 항에 있어서, 상기 외층이 Bi, P, Se 및 Tl로부터 선택되는 1종 이상의 원소를 함유하고, 상기 외층의 표면에서의 이 원소 농도가 총계로 0.01 내지 5 mol%의 범위인 것을 특징으로 한다. The bonding wire according to claim 4, wherein the outer layer contains at least one element selected from Bi, P, Se, and Tl, and this element on the surface of the outer layer The concentration is characterized in that the total range of 0.01 to 5 mol%.
또한, 청구항 5에 관한 본딩 와이어는 청구항 1 내지 4 중 어느 하나의 항에 있어서, 상기 외층과 상기 심재와의 사이에 확산층을 가진 것을 특징으로 한다. In addition, the bonding wire according to claim 5 has a diffusion layer according to any one of claims 1 to 4, wherein the bonding layer has a diffusion layer between the outer layer and the core member.
또한, 청구항 6에 관한 본딩 와이어는 청구항 1 내지 5 중 어느 하나의 항에 있어서, 금속계 원소와 탄소, 산소 및 질소와의 각 원소의 총계에 대한 농도로 비교하여, 상기 외층의 최표면의 탄소 농도가 15 내지 80 mol%의 범위이며, 표면으로부터 깊이 방향으로 탄소 농도가 5 내지 80 mol%의 범위인 영역의 두께가 0.0004 내지 0.01 ㎛인 것을 특징으로 한다.The bonding wire according to claim 6 is the carbon concentration of the outermost surface of the outer layer as compared with the concentration of the metal element and the total amount of each element of carbon, oxygen, and nitrogen according to any one of claims 1 to 5. Is in the range of 15 to 80 mol%, and the thickness of the region having a carbon concentration in the range of 5 to 80 mol% in the depth direction from the surface is 0.0004 to 0.01 mu m.
또한, 청구항 7에 관한 본딩 와이어는 청구항 1 내지 6 중 어느 하나의 항에 있어서, 금속계 원소와 탄소, 산소 및 질소와의 각 원소의 총계에 대한 농도로 비교하여, 상기 외층의 최표면의 산소 농도가 1 내지 25 mol%의 범위이며, 이 외층의 표면에 산소 농도가 0.2 내지 25 mol%의 범위인 영역의 두께가 0.0005 내지 0.007㎛의 범위인 것을 특징으로 한다. In addition, the bonding wire of Claim 7 is compared with the density | concentration with respect to the total amount of each element of a metallic element and carbon, oxygen, and nitrogen, The oxygen concentration of the outermost surface of the said outer layer in any one of Claims 1-6. Is in the range of 1 to 25 mol%, and the thickness of the region having an oxygen concentration in the range of 0.2 to 25 mol% on the surface of the outer layer is in the range of 0.0005 to 0.007 μm.
또한, 청구항 8에 관한 본딩 와이어는, 청구항 1 내지 7에 있어서, 금속계 원소의 총계에 대한 상기 금속 M의 농도가 10 mol% 이상인 영역의 두께가 0.03 내지 0.2 ㎛인 것을 특징으로 한다. The bonding wire according to claim 8 is characterized in that the thickness of the region in which the concentration of the metal M is 10 mol% or more with respect to the total amount of the metallic elements is 0.03 to 0.2 µm.
또한, 청구항 9에 관한 본딩 와이어는 청구항 1 내지 8의 어느 하나의 항에 있어서, 상기 외층 내에 있어서, 금속계 원소의 총계에 대한 상기 금속 M의 농도가 총계로 90 mol% 이상인 영역의 두께가 0.004 내지 0.07 ㎛인 것을 특징으로 한다. Further, in the bonding wire according to claim 9, the thickness of the region according to any one of claims 1 to 8, wherein the concentration of the metal M to the total amount of the metallic elements in the outer layer is 90 mol% or more in total. It is characterized by being 0.07 μm.
또한, 청구항 10에 관한 본딩 와이어는 청구항 1 내지 9의 어느 하나의 항에 있어서, 상기 외층 내에 있어서, 금속계 원소의 총계에 대한 금속 M의 농도가 총계로 96 mol% 이상인 영역의 두께가 0.002 내지 0.06 ㎛인 것을 특징으로 한다. In the bonding wire according to claim 10, the thickness of the region according to any one of claims 1 to 9, wherein the concentration of the metal M to the total amount of the metallic elements is 96 mol% or more in the outer layer is 0.002 to 0.06. It is characterized by a micrometer.
또한, 청구항 11에 관한 본딩 와이어는 청구항 1 내지 10의 어느 하나의 항에 있어서, 상기 외층의 최표면에 있어서의 금속계 원소의 총계에 대한 구리 농도가 45 mol% 이하인 것을 특징으로 한다. The bonding wire according to claim 11 is characterized in that the copper concentration with respect to the total amount of the metallic elements at the outermost surface of the outer layer is 45 mol% or less according to any one of claims 1 to 10.
또한, 청구항 12에 관한 본딩 와이어는 청구항 1 내지 11의 어느 하나의 항에 있어서, 상기 외층의 표면에 금속계 원소의 총계에 대한 구리 농도가 1 내지 30 mol%의 범위인 영역의 두께가 0.0005 내지 0.008 ㎛인 것을 특징으로 한다. Further, in the bonding wire according to claim 12, the thickness of the region according to any one of claims 1 to 11, wherein the copper concentration with respect to the total amount of the metallic elements on the surface of the outer layer is in the range of 1 to 30 mol%. It is characterized by a micrometer.
또한, 청구항 13에 관한 본딩 와이어는 청구항 1 내지 12의 어느 하나의 항에 있어서, 와이어 전체에서 차지하는 구리 이외의 상기 금속 M의 농도가 총계로 0.05 내지 3 mol%의 범위인 것을 특징으로 한다. The bonding wire according to claim 13 is characterized in that, in any one of claims 1 to 12, the concentration of the metal M other than copper in the entire wire is in the range of 0.05 to 3 mol% in total.
또한, 청구항 14에 관한 와이어 본딩 방법은 청구항 1 내지 13 중 어느 하나의 항에 기재된 본딩 와이어를 접속하는 와이어 본딩 방법으로서, 순도가 99.95 vol% 이상의 질소 가스를 와이어 선단 또는 그 주위에 분사하면서 아크 방전을 일으켜 볼부를 형성하고, 이 볼부를 접합하는 것을 특징으로 한다. The wire bonding method according to claim 14 is a wire bonding method for connecting the bonding wire according to any one of claims 1 to 13, wherein the arc discharge is performed while injecting nitrogen gas having a purity of 99.95 vol% or more to or around the wire end thereof. It is characterized by forming a ball part and joining this ball part.
발명을 실시하기Carrying out the invention 위한 최선의 실시 상태 Best Practice for
본딩 와이어에 대하여, 구리를 주성분으로 하는 심재와, 금속 M을 함유하는 피복층으로 구성된 것을 검토한 결과, 와이어의 표면 근방에 금속 M을 함유시킴으로써, 웨지 접합성의 향상 등을 기대할 수 있는 반면, 볼의 불안정 형성, 열 사이클 시험 또는 리플로우 공정에서의 웨지 접합부의 파단이 새로운 문제가 되고, 또한 보관 수명의 개선 효과가 충분하지 않은 것 등이 판명되었다. 이에 협피치의 소볼 접합, 열 피로에서의 웨지 접합부의 고신뢰화, 보관 수명의 연장 등의 새로운 실장(實裝) 니즈에 대한 대응, 양산 적응성의 향상, 실장 프로세스 비용을 더욱 삭감하는 저렴한 가스를 사용한 접속 안정성의 개선 등에도 대응할 수 있는 구리계 본딩 와이어를 검토한 결과, 외층을 가지고, 특정의 외층 두께를 가지며, 특정의 두께 범위로 하는 것이 유효한 것을 밝혀내었다. 더 효과적으로는 외층 및 심재 등의 조성, 구조 등의 제어가 유효한 것을 밝혀내었다. As a result of examining a bonding wire composed of a core material containing copper as a main component and a coating layer containing metal M, it is possible to expect improved wedge bonding properties by including metal M near the surface of the wire. Breakage of wedge joints in unstable formation, thermal cycle testing, or reflow processes has become a new problem, and it has been found that the effect of improving the shelf life is insufficient. In response to new mounting needs, such as narrow pitch small ball joints, high reliability of wedge joints under thermal fatigue, and extended shelf life, the use of inexpensive gases to improve mass production adaptability and further reduce mounting process costs As a result of examining the copper-based bonding wire that can cope with improvement of connection stability and the like, it was found that having an outer layer, having a specific outer layer thickness, and having a specific thickness range was effective. More effectively, it has been found that control of the composition, structure, etc. of the outer layer and the core material is effective.
즉, 구리를 주성분으로 하는 심재와, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나 또는 두 가지가 모두 다른 금속 M 및 구리를 함유한 외층을 가지고, 상기 외층의 두께가 0.021 내지 0.12 ㎛인 본딩 와이어인 것이 좋다. 이 본딩 와이어이면, 열 사이클 시험(TCT 시험) 또는 리플로우 공정에 있어서, 웨지 접합부에서의 단선(斷線)을 억제하는 높은 효과를 얻을 수 있다. 여기서의 주성분이란, 구리와 금속 M의 농도의 총계에 대한 구리 농도의 비율이 50% 이상인 것을 가리킨다. That is, it has a core material containing copper as a main component, and the outer layer containing metal M and copper in which one or both of a core material, a component, and a composition are different on this core material, and whose thickness is 0.021-0.12 micrometers. It is good that it is a bonding wire. If it is this bonding wire, the high effect which suppresses the disconnection in a wedge junction part can be acquired in a heat cycle test (TCT test) or a reflow process. A main component here means that the ratio of copper concentration with respect to the total of the concentration of copper and metal M is 50% or more.
TCT 시험에서는 온도의 상승과 하강을 반복함으로써, 밀봉 수지, 리드 프레임, 실리콘 칩의 열 팽창 차에 기인하는 열 변형이 생기고, 원래 강도적으로 약한 웨지 접합부의 근방에 파단 또는 손상을 유발한다. 본딩 와이어가 크게 변형되어 있는 웨지 접합부에서는 단면적의 축소나 가공 시의 격자 결함의 도입 등 일반적으로 와이어 단체(單體)보다 강도가 저하되어 있다. 또한, 구리 와이어는 웨지 접합 계면의 접합 강도가 금 본딩 와이어와 비교하여 상당히 낮기 때문에, 인장·압축이 반복되면 이 접합부 근방에서의 박리, 단선 등이 발생하기 쉬운 것이 판명되었다. 이와 같은 요인으로부터, 구리계 본딩 와이어의 웨지 접합부에서는 TCT 시험에서의 불량의 발생이 금 본딩 와이어보다 큰 문제가 된다. In the TCT test, the temperature rises and falls repeatedly, causing thermal deformation due to thermal expansion difference between the sealing resin, the lead frame, and the silicon chip, and causing breakage or damage in the vicinity of the wedge joint, which is originally weak in strength. In the wedge joints where the bonding wires are largely deformed, the strength is generally lower than that of the wire alone, such as reduction of the cross-sectional area and introduction of lattice defects during processing. Moreover, since the bond strength of a wedge junction interface is considerably low compared with a gold bonding wire, it turns out that copper wire is easy to produce peeling, disconnection, etc. in the vicinity of this junction part when tension and compression are repeated. From these factors, the occurrence of defects in the TCT test at the wedge joints of the copper-based bonding wires is a greater problem than the gold bonding wires.
외층의 두께가 0.021 내지 0.12 ㎛ 범위이면, TCT 시험에서의 웨지 접합부에서의 신뢰성이 향상되는 요인은 외층을 구성하는 금속 M이 접합 상대와의 밀착성의 향상에 유효하게 작용하기 때문이라고 생각된다. 두께가 0.021 ㎛ 이상이면, 외층이 접합 계면에서 거의 안정적으로 강도 증가를 초래하기 때문에, TCT 시험에서 높은 신뢰성을 얻을 수 있다. 두께가 0.021 ㎛ 미만이면, TCT 시험에서의 충분한 신뢰성을 얻을 수 없는 것을 경험적으로 파악하였다. 이 근거는 웨지 접합 시에 외층이 와이어와 마찬가지로 크게 변형됨으로써, 접합 계면에 잔존하는 외층이 얇은 영역 또는 존재하지 않는 영역 등이 국재적으로 발생하고, TCT 시험에 견딜 수 있는 충분한 계면 강도를 확보할 수 없기 때문이라고 생각된다. 이러한 접합 계면에서 외층의 존재가 불균일하더라도, 많은 경우에는 초기의 접합 강도의 향상에는 유효하게 작용하는 데 대하여, TCT 시험의 열 이력에서는 인장·압축 방향의 변형이 웨지 접합에 복잡하게 관여하기 때문에, 충분한 내성을 확보할 수 없다. 한편, 외층 두께가 0.12 ㎛를 넘으면, 볼부의 표면 평활의 저하, 골프 클럽 모양의 심 어긋남의 볼 불량이 발생하여, 볼의 형상, 사이즈가 불안정하게 된다. 0.12 ㎛ 이하이면, 양립이 곤란하였던 볼 형성성과 웨지 접합성을 모두 만족할 수 있다. If the thickness of the outer layer is in the range of 0.021 to 0.12 µm, it is considered that the factor of improving the reliability at the wedge joint in the TCT test is that the metal M constituting the outer layer effectively works to improve the adhesion with the bonding partner. If the thickness is 0.021 µm or more, since the outer layer causes an increase in strength almost stably at the bonding interface, high reliability can be obtained in the TCT test. It was empirically understood that when the thickness was less than 0.021 µm, sufficient reliability in the TCT test could not be obtained. The reason for this is that the outer layer is largely deformed like the wire at the time of wedge joining, so that a thin region or a region in which the outer layer remaining at the bonding interface does not exist is generated locally, thereby ensuring sufficient interface strength to withstand the TCT test. It is thought that it is not possible. Although the presence of the outer layer at such a bonding interface is uneven, in many cases it is effective for improving the initial bond strength, whereas in the thermal history of the TCT test, deformation in the tensile and compression directions is complicated in wedge bonding. Sufficient tolerance cannot be secured. On the other hand, if the thickness of the outer layer exceeds 0.12 占 퐉, the surface smoothness of the ball portion and the poor ball of the golf club shape seam are generated, resulting in unstable shape and size of the ball. If it is 0.12 micrometer or less, it can satisfy | fill both ball formation and wedge joining which were difficult to compatible.
좋기로는, 외층의 두께가 0.025 내지 0.095 ㎛의 범위이면, 엄격한 열 이력 조건에 있어서의 TCT 시험에서의 불량을 저감하여, 높은 신뢰성을 얻을 수 있다. 더 좋기로는, 0.03 내지 0.085 ㎛의 범위이면, 엄격한 열 이력 조건에 있어서의 TCT 시험의 신뢰성을 한층 더 향상시킬 수 있다. Preferably, when the thickness of the outer layer is in the range of 0.025 to 0.095 µm, defects in the TCT test under strict heat history conditions can be reduced, and high reliability can be obtained. More preferably, in the range of 0.03 to 0.085 µm, the reliability of the TCT test under strict heat history conditions can be further improved.
TCT 시험에서의 웨지 접합부의 손상은 리드 프레임의 소재와도 관련이 있고, 리드 프레임이 구리 합금인 경우에 열 변형량이 크고 손상이 발생하기 쉬운 데 대하여, 열팽창 계수가 작은 42 합금의 경우에는 불량은 거의 발생하지 않는다. 염가의 구리계 리드 프레임의 사용량이 향후 더 증가하는 것, 고온 신뢰성이 요구되는 차재용(車載用) 반도체의 용도에 구리계 본딩 와이어를 적용하는 것 등을 생각하면, TCT 시험에서의 구리계 본딩 와이어의 신뢰성은, 보고 사례는 아직 적기는 하지만, 최근 주목받고 있는 과제이다. The damage of the wedge joints in the TCT test is also related to the material of the lead frame, and when the lead frame is a copper alloy, the thermal deformation is large and the damage is likely to occur. Rarely occurs. Considering the increase in the amount of inexpensive copper lead frames in the future and the application of copper bonding wires to applications for automotive semiconductors requiring high temperature reliability, copper bonding wires in TCT tests Reliability is a subject that has attracted much attention recently, although few reports have been reported.
TCT 시험만으로 판정한 경우, 시료 제작이 번잡하고, 평가 시간이 길며, 본딩 와이어 이외의 리드 프레임, 밀봉 수지 등의 부재의 선정에 따라 평가 결과도 달라지는 것 등이 염려된다. 이에 평가 효율을 높이는 간편한 시험법으로서, 웨지 접합부의 인장 시험(이하, 웨지 접합의 필 시험이라 한다.)을 본 발명자들은 고안하여, TCT 시험과 같은 상관(相關)을 얻을 수 있는 것을 확인하였다. 이것은 웨지 접합부의 바로 윗 방향으로 본딩 와이어를 끌어올리는 통상의 필 시험을 개량하여, 인장 방향, 속도 등을 적정화한 측정법이다. 이 시험에서 파단 연성이 높은 본딩 와이어 및 접속 시료에서는 TCT 시험에서의 불량 발생까지의 사이클 수가 긴 경향이 있는 것이 확인되었다. 웨지 접합의 필 시험은 TCT 시험에서는 얻을 수 없는 웨지 접합부의 기계적 특성을 정량적으로 평가할 수 있는 유효한 수법이다. When it judges only by TCT test, sample preparation is complicated, evaluation time is long, and an evaluation result changes with selection of members, such as a lead frame and sealing resin other than a bonding wire, and the like. As a simple test method for increasing the evaluation efficiency, the present inventors devised a tensile test (hereinafter referred to as a peel test for wedge joining) of the wedge joint, and confirmed that a correlation similar to that of the TCT test can be obtained. This is a measuring method in which the normal peel test for pulling up the bonding wire in the direction immediately above the wedge joint is improved and the tension direction, speed, and the like are optimized. In this test, it was confirmed that the bonding wire and connection sample with high ductility at break tended to have a long cycle number until the failure occurred in the TCT test. Peel testing of wedge joints is an effective technique for quantitatively evaluating the mechanical properties of wedge joints that are not available in TCT tests.
외층의 주성분이 되는 금속 M이란, 구리 이외의 금속으로서, 본딩 와이어의 접합성의 개선에 효과가 있으며, 구리의 산화 방지에도 유효한 금속인 것이 좋다. 예를 들면 Au, Pd, Pt, Rh, Ag, W, Mo, Cr 및 Ni 등이 있다. 그 중에서도, 금속 M으로서 Au, Pd, Pt 및 Rh의 적어도 1종의 금속인 것이 좋다. Au은 밀봉 수지와의 밀착성, 전극에의 접합성 등에 실적이 많고, 품질 관리도 용이한 등의 이점이 있다. Pd 및 Pt은 볼 형상을 안정화시키는 것이 비교적 용이하고, TCT 시험에서의 접합 신뢰성에서도 높은 개선 효과를 얻을 수 있다. Pd은 재료비도 비교적 저렴하고, 구리와의 밀착성도 양호하기 때문에, 외층으로서의 이용 가치가 한층 더 높아지고 있다. 그 중에서도, 외층의 주성분이 Pd이고, 이 외층의 두께가 0.021 내지 0.12 ㎛인 경우에는, 전술한 TCT 시험에서의 접합 신뢰성의 개선 효과가 현저하며, 더 우수한 와이어 접합성, 조작성 등을 가졌기 때문에, 세선에서의 양산 수율의 향상에도 유리하다는 것이 확인되었다. Metal M, which is the main component of the outer layer, is a metal other than copper, which is effective in improving the bonding property of the bonding wire, and is preferably a metal that is also effective in preventing oxidation of copper. Examples include Au, Pd, Pt, Rh, Ag, W, Mo, Cr and Ni. Especially, as metal M, it is good that they are at least 1 sort (s) of metal of Au, Pd, Pt, and Rh. Au has many advantages such as adhesion to sealing resins, adhesion to electrodes, and easy quality control. Pd and Pt are relatively easy to stabilize the ball shape, it is possible to obtain a high improvement effect in the bonding reliability in the TCT test. Pd is relatively inexpensive in terms of material cost and has good adhesiveness with copper, which further increases the value of use as an outer layer. Especially, when the main component of an outer layer is Pd and the thickness of this outer layer is 0.021-0.12 micrometers, since the improvement effect of the joining reliability in the TCT test mentioned above is remarkable, since it had more excellent wire joining property, operability, etc., a thin wire It was confirmed that it was also advantageous to improve the mass production yield at.
심재의 주성분은 구리이며, 합금 원소를 첨가하고, 구리 합금 중의 성분, 조성에 의하여 특성은 개선된다. 상기 구리를 주성분으로 하는 심재가 P, B, Ir, Zr, Bi, Ti, Au, Ag, Sn 및 희토류 원소로부터 선택되는 1종 이상의 첨가 원소를 함유하고, 본딩 와이어 전체에 차지하는 이 첨가 원소 농도가 총계로 0.0001 내지 0.03 mol%의 범위인 것에 의하여, TCT 시험에서의 불량율의 저감, 웨지 접합의 필 시험에서의 파단 연신의 증가 등의 효과가 증대한다. 특히, 웨지 접합의 필 시험에서는 개선 효과가 크다. 이들 합금 원소의 작용으로서 와이어 제조, 웨지 접합에 있어서 심재의 가공 및 재결정에서의 집합 조직의 형성을 제어함으로써, 웨지 접합부 근방에서의 본딩 와이어의 파단 연신의 증가에 유효하게 작용하고 있다고 생각된다. 또한, 외층을 구성하는 금속 M이 Au, Pd, Pt 및 Rh인 경우에 볼 용융에 의하여 심재 중의 이 첨가 원소는 금속 M과 상승 작용함으로써, 볼 변형시의 진원성을 더욱 향상시키는 효과가 있다. 이러한 첨가 효과에 대하여, 외층이 형성되어 있지 않은 종래의 구리계 본딩 와이어에 첨가된 경우와 비교하여, 외층과 이 첨가 원소가 병용된 경우에 효과가 촉진되는 것을 밝혀내었다. 이 첨가 원소의 농도가 0.0001 mol% 미만이면, 전술한 개선 효과가 작아지는 경우가 있다. 0.03 mol%를 넘으면, 볼 표면에 주름 형태의 오목부가 발생하여 볼 형상이 불안정하게 되는 경우가 있다. 그 중에서도, 외층의 금속 M이 Pd일 때, 상기 심재의 합금화 효과를 증폭하는 것이 가능하고, 필 시험에서의 개선 효과를 세선(細線), 두꺼운 선(太線) 같이 선의 직경에 관계없이 안정적으로 확보할 수 있고, 나아가 볼 변형의 진원성이 향상하는 것 등이 확인되었다. The main component of the core material is copper, and an alloying element is added, and the characteristic is improved by the component and composition in the copper alloy. The copper-based core material contains at least one additional element selected from P, B, Ir, Zr, Bi, Ti, Au, Ag, Sn, and rare earth elements, and the concentration of this additional element in the entire bonding wire is When the total amount is in the range of 0.0001 to 0.03 mol%, the effect of reducing the defective rate in the TCT test and increasing the elongation at break in the peel test of the wedge bonding increases. In particular, in the peel test of the wedge joint, the improvement effect is large. It is considered that the action of these alloying elements is effective in increasing the elongation at break of the bonding wire in the vicinity of the wedge joint by controlling the formation of the aggregate structure in the processing and recrystallization of the core material in wire production and wedge joining. In addition, when the metal M constituting the outer layer is Au, Pd, Pt, and Rh, this additive element in the core material synergizes with the metal M by ball melting, thereby further improving the roundness during ball deformation. This addition effect was found to be enhanced when the outer layer and this additional element are used in combination with the case where it is added to the conventional copper-based bonding wire in which the outer layer is not formed. When the concentration of this additional element is less than 0.0001 mol%, the above-described improvement effect may be reduced. When it exceeds 0.03 mol%, a wrinkle-shaped recess may generate | occur | produce on a ball surface, and a ball shape may become unstable. Among them, when the metal M of the outer layer is Pd, it is possible to amplify the alloying effect of the core material, and the improvement effect in the peel test can be stably secured regardless of the diameter of the wire such as a thin line and a thick line. It was confirmed that the roundness of the ball deformation can be improved.
상기 외층이, Bi, P, Se 및 Tl로부터 선택되는 1종 이상의 원소를 함유하고, 외층의 표면에서의 이 원소 농도가 총계로 0.01 내지 5 mol%의 범위인 것에 의하여, 와이어 표면의 스크래치를 감소시킬 수 있고, 결과적으로, 캐필러리의 막힘이 감소하여, 캐필러리의 교환 수명을 향상하는 것이 가능하게 된다. 이것은 상기 원소가 포함되는 외층에서는 막질이 치밀하고, 표면이 경화하는 것 등이 영향을 미치고 있다고 생각할 수 있다. 외층의 표면에서의 이 원소 농도가 0.01 mol% 미만이면, 전술한 개선 효과가 작아지는 경우가 있고, 5 mol%를 넘으면, 본딩 와이어와 캐필러리 내벽과의 슬라이딩 저항이 증가하여 루프 형상이 불안정하게 되는 경우가 있다. The outer layer contains at least one element selected from Bi, P, Se and Tl, and the concentration of this element on the surface of the outer layer is in the range of 0.01 to 5 mol% in total, thereby reducing scratches on the wire surface. As a result, clogging of the capillary is reduced, which makes it possible to improve the exchange life of the capillary. This can be considered to be due to the high film quality in the outer layer containing the above elements and the hardening of the surface. If the concentration of this element on the surface of the outer layer is less than 0.01 mol%, the above-described improvement effect may be reduced. If it exceeds 5 mol%, the sliding resistance between the bonding wire and the capillary inner wall increases and the loop shape becomes unstable. There is a case to be done.
본원의 와이어 단면 구조에 대하여, 기본적으로는 외층/심재, 또는 외층/확산층/심재로 구분할 수 있다. 이 때, 외층의 경계는 외층을 구성하는 금속 M의 검출 농도의 총계가 50 mol%인 부위로 한다. 따라서, 본 발명에서 말하는 외층이란, 외층을 구성하는 금속 M의 검출 농도의 총계가 50 mol%의 부위의 표면, 즉, 외층을 구성하는 금속 M의 검출 농도의 총계가 50 mol% 이상인 부위이다. 이 근거는 TCT 시험, 리플로우 내성 등 고온 환경에서의 접합 계면에서의 확산 현상에 좌우되는 와이어 특성에 대하여, 상기 검출 농도가 50 mol% 이상인 부위가 지배적으로 작용하는 것을 나타내기 위한 것이다. 이 농도값은 층 경계 농도로서 비교적 높다고 생각할 수 있으나, 50 mol% 이상의 영역을 외층으로 하여 와이어 내부와 구별하여 제어함으로써, 본 발명의 효과뿐만 아니라, 와이어 종합 특성의 관리, 정리에도 도움이 된다. 여기서의 외층, 확산층에서의 농도에 대하여, 금속 M과 구리를 총계한 농도 비율을 사용하고 있고, 표면 근방의 C, O, N, Cl, S 등 가스 성분, 비금속 원소 등은 제외하여 계산한 농도값을 사용하고 있다. About the wire cross-sectional structure of this application, it can fundamentally divide into outer layer / core material, or outer layer / diffusion layer / core material. At this time, the boundary of the outer layer is a portion where the total concentration of the metal M constituting the outer layer is 50 mol%. Therefore, the outer layer as used in the present invention refers to a surface at which the total amount of the detected concentration of the metal M constituting the outer layer is 50 mol%, that is, the total amount of the detected concentration of the metal M constituting the outer layer is 50 mol% or more. This reason is to show that the site | part which the said detection density | concentration is 50 mol% or more predominantly acts on the wire characteristic which depends on the diffusion phenomenon in the junction interface in high temperature environment, such as a TCT test and reflow resistance. Although this concentration value can be considered to be relatively high as the layer boundary concentration, by controlling the area of 50 mol% or more as the outer layer to distinguish it from the inside of the wire, not only the effect of the present invention but also the management and arrangement of the wire overall characteristics are helpful. The concentration ratio which totaled metal M and copper was used with respect to the density | concentration in an outer layer and a diffusion layer here, The density computed except gas components, nonmetallic elements, such as C, O, N, Cl, S, etc. in the vicinity of the surface. I'm using a value.
외층과 심재의 중간 영역을 확산층으로 하는데, 이 확산층은 심재의 구리와 외층의 금속 M이 상호 확산에 의하여 형성된 영역이다. 본원의 확산층의 정의는 성능 등으로 판단하여, 금속 M의 검출 농도의 총계가 10 mol% 이상 50 mol% 미만인 영역으로 한다. 이 농도 영역에서는 금속 M의 농도가 낮아서, 외층과 심재, 이 두 가지와는 조금 다른 역할을 하기 때문이다. 이와 같은 확산층을 가진 본딩 와이어가 더 좋다. An intermediate region between the outer layer and the core is used as a diffusion layer, which is a region in which copper of the core and the metal M of the outer layer are formed by mutual diffusion. The definition of the diffusion layer of this application is judged by performance etc., and makes into the area | region whose sum total of the detection concentration of metal M is 10 mol% or more and less than 50 mol%. This is because the metal M has a low concentration in this concentration region, and plays a slightly different role from the two, the outer layer and the core. Bonding wires with such diffusion layers are better.
외층과 심재의 사이에 확산층을 가진 본딩 와이어로서, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나, 또는 두 가지가 모두 다른 금속 M 및 구리를 함유하는 외층을 가지고, 상기 외층의 두께가 0.021 내지 0.12 ㎛이며, 금속 M의 농도가 10 mol% 이상인 영역의 두께가 0.03 내지 0.2 ㎛인 반도체 장치용 본딩 와이어인 것이 좋다. 이 본딩 와이어이면, 초기의 웨지 접합성이 더 향상되고, 또한 무연 땜납을 사용한 리플로우 공정에서의 웨지 접합부의 신뢰성을 더 향상시킨다. 이 때, 금속 M의 농도가 10 mol% 이상인 영역이란, 외층과 확산층을 합한 부위에 상당한다. A bonding wire having a diffusion layer between the outer layer and the core material, the bonding wire provided on the core material having an outer layer containing metal M and copper, either of which is different from the core material, or both of the components and the composition, and the thickness of the outer layer being 0.021. It is preferable that it is a bonding wire for semiconductor devices whose thickness of the area | region whose the density | concentration of metal M is 10 mol% or more is 0.03-0.2 micrometer-0.12 micrometer. With this bonding wire, the initial wedge joinability is further improved, and the reliability of the wedge joint at the reflow step using lead-free solder is further improved. Under the present circumstances, the area | region whose metal M concentration is 10 mol% or more corresponds to the site | part which combined the outer layer and the diffusion layer.
특정 두께의 외층만으로는 웨지 접합성과 리플로우 특성을 동시에 향상하는 것은 곤란한 경우가 있고, 금속 M의 농도가 10 mol% 이상인 영역의 두께, 즉, 외층과 확산층을 합한 두께가 더 중요한 역할을 한다. 웨지 접합에서는 본딩 와이어가 복잡한 소성 변형을 받아서, 일부에는 상당한 소성 변형량이 되기 때문에, 외층뿐만 아니라, 확산층도 접합 계면으로 기능하기 때문이라고 생각된다. 이 농도 영역의 두께가 0.03㎛ 이상이면, 구리계 본딩 와이어의 웨지 접합에서 자주 문제가 되는 접착 불량(non-stick fai1ure)을 더욱 저감할 수 있고, 양산 수율을 더욱 향상시키는 것도 용이하다. 또한, 이 농도 영역의 두께가 0.03 ㎛ 이상인 다른 효과로서 리플로우 온도가 높은 경우에 열 변형이 증대하더라도, 웨지 접합부에서의 크랙, 파단 등을 더 저감할 수 있다. 리플로우 공정에서는 반도체 소자가 단시간 동안의 온도 상승과 강하에 노출되기 때문에, 급열·급냉된 웨지 접합부에는 TCT 시험과는 조금 다른 신뢰성이 요구된다. 이 농도 영역의 두께가 0.2 ㎛를 초과하면, 본딩 와이어의 휨 강성이 높아지고, 루프 형상의 불균일이 증가하는 경우가 있기 때문이다. 이 때, 확산층을 금속 M의 농도가 10 mol% 이상 50 mol% 미만인 영역으로 하면, 확산층만 분리한 두께로써, 0.009 내지 0.18 ㎛의 범위가 바람직하게 된다. 좋기로는, 금속 M의 농도가 10 mol% 이상인 영역의 두께가 0.04㎛ 이상이면, 180℃ 이하의 저온에서 와이어 접속된 시료에서도 리플로우 내성을 높이는데 유효하다. 이것은 180℃ 이하의 저온 접속에서는 초기에 충분한 접합 강도를 얻는 것이 곤란하게 되는 경우가 있고, 통상의 250℃ 정도에서의 와이어 접속과 비교하여, 웨지 접합의 내성이 저하하는 경우가 있는 것이 원인이다. It is sometimes difficult to improve wedge bonding properties and reflow characteristics simultaneously only with the outer layer having a specific thickness, and the thickness of the region where the metal M concentration is 10 mol% or more, that is, the thickness of the outer layer and the diffusion layer, plays a more important role. In wedge joining, since the bonding wire receives a complicated plastic deformation and a part becomes a considerable plastic deformation amount, it is considered that not only an outer layer but also a diffusion layer functions as a joining interface. If the thickness of the concentration region is 0.03 µm or more, non-stick faiure, which is often a problem in wedge bonding of the copper-based bonding wire, can be further reduced, and it is also easy to further improve the mass production yield. Further, as another effect of the thickness of this concentration region being 0.03 µm or more, even if the thermal deformation increases when the reflow temperature is high, cracks, breaks, and the like at the wedge joints can be further reduced. In the reflow process, the semiconductor element is exposed to a temperature rise and drop for a short time, so that the quenched and quenched wedge joints require a slightly different reliability from the TCT test. This is because when the thickness of the concentration region exceeds 0.2 µm, the bending rigidity of the bonding wire is increased and the variation in loop shape may increase. At this time, when the diffusion layer is a region having a metal M concentration of 10 mol% or more and less than 50 mol%, the thickness of only the diffusion layer is separated, and the range of 0.009 to 0.18 µm is preferable. Preferably, when the thickness of the region where the concentration of the metal M is 10 mol% or more is 0.04 µm or more, it is effective to increase the reflow resistance even in a sample wired at a low temperature of 180 ° C or less. This is because in low temperature connection of 180 ° C. or lower, it may be difficult to initially obtain sufficient bonding strength, and the resistance of the wedge joint may be lowered as compared with the normal wire connection at about 250 ° C.
외층과 심재 사이에 확산층을 가진 본딩 와이어로서, 심재와, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나, 또는 두 가지가 모두 다른 금속 M 및 구리를 함유하는 외층을 가지고, 상기 외층의 두께가 0.021 내지 0.12 ㎛이며, 외층 내에 있어서, 금속 M의 농도가 총계로 90 mol% 이상인 영역의 두께가 0.004 내지 0.07 ㎛인 반도체 장치용 본딩 와이어인 것이 더 좋다. 이 본딩 와이어이면, TCT 시험에서의 접합성 향상에 추가하여, 본딩 와이어를 대기 중에 방치하였을 때의 보관 수명을 큰 폭으로 향상시킬 수 있다.
A bonding wire having a diffusion layer between the outer layer and the core, having a core and an outer layer provided on the core, either of the core and the component and composition, or both of which contain different metals M and copper; Is 0.021 to 0.12 mu m, and in the outer layer, it is more preferable that the thickness of the region where the concentration of the metal M is 90 mol% or more in total is a bonding wire for semiconductor device having 0.004 to 0.07 mu m. In the case of this bonding wire, in addition to the improvement of the bonding property in a TCT test, the storage life at the time of leaving a bonding wire in air | atmosphere can be improved significantly.
보관 사례로서 이 본딩 와이어에서는 상온에서 대기 중에 30일간 이상 방치하여도 와이어 접속 공정에서의 접착 불량이 발생하지 않는 것을 확인하였다. 이것은 종래의 단층 구리 와이어에서는, 5일 정도의 대기 방치에 의하여 접착 불량이 발생하는 것과 비교하여도, 보관 수명의 대폭적인 연장이다. 보관 수명이 경과된 구리계 본딩 와이어를 사용하면, 볼 접합 또는 웨지 접합에서의 접착 불량이 발생하거나, 그것과 관련하여, 본딩 장치가 에러로 정지하는 것이 문제가 되는 경우가 있다. 대기 방치가 연장될 수 있는 이점에서는 본딩 와이어의 품질 보장의 기간 연장, 와이어 제품의 와이어 감은 회수의 증가에 의하여 실용시의 와이어 교환 빈도의 개선 등 작업성의 향상이 기대된다. As a storage example, in this bonding wire, even if it was left to stand in air | atmosphere for 30 days or more, it confirmed that the adhesion failure in a wire connection process does not arise. In the conventional single-layer copper wire, this is a significant extension of the shelf life even when adhesion failure occurs due to atmospheric stand for about 5 days. When the copper-based bonding wire of which shelf life has passed is used, the adhesion failure in a ball joint or a wedge joint may generate | occur | produce, or it may become a problem that a bonding apparatus stops by an error in connection with it. In the advantage that the waiting time can be extended, workability is expected to be improved by extending the period of guaranteeing the quality of the bonding wires and increasing the number of windings of the wire products, thereby improving the frequency of wire replacement in practical use.
금속 M의 합계 농도가 90 mol% 이상인 영역에서는 구리 농도가 10 mol% 미만이므로, 상기 영역에서는 외층 내에서 금속 M의 고농도 영역이 된다. 이 고농도 영역이 산소의 내부 침입, 구리의 표면 방향으로의 확산을 저해하는 장벽(barrier) 기능을 가지고 있고, 그 기능을 더 높일 수 있는 농도가 90 mol% 이상인 것을 밝혀내었다. 이 농도 영역의 두께가 0.004㎛ 이상이면, 이 장벽 기능이 유효하게 작용하여 산화, 황화를 억제함으로써, 상온에서 30일 이상으로 보관 수명을 향상시킬 수 있다. 한편, 0.07 ㎛를 초과하면, 볼 표면의 요철의 증가 또는 경화에 의하여, 볼 접합부의 형상이 열화된다. 좋기로는, 이 고농도 영역이 0.008 내지 0.06 ㎛의 범위이면, 더 장기간 동안 보관 수명을 연장할 수 있다. 더 좋기로는, 이 고농도 영역이 0.01 내지 0.05 ㎛의 범위이면 보관 수명을 더 향상시키고, 장기 보관 후의 본딩 와이어의 웨지 접합에서의 불량을 억제할 수 있다. Since the copper concentration is less than 10 mol% in the region where the total concentration of the metal M is 90 mol% or more, the region becomes a high concentration region of the metal M in the outer layer. It has been found that this high concentration region has a barrier function that inhibits the invasion of oxygen and the diffusion of copper in the surface direction, and the concentration that can further enhance the function is found to be 90 mol% or more. If the thickness of the concentration region is 0.004 µm or more, the barrier function works effectively and suppresses oxidation and sulfidation, thereby improving shelf life at room temperature for 30 days or more. On the other hand, when it exceeds 0.07 micrometer, the shape of a ball joint part deteriorates by the increase or hardening of the unevenness | corrugation of a ball surface. Specifically, if this high concentration region is in the range of 0.008 to 0.06 mu m, the shelf life can be extended for a longer period. More preferably, when this high concentration region is in the range of 0.01 to 0.05 µm, the shelf life can be further improved, and defects in wedge bonding of the bonding wire after long term storage can be suppressed.
와이어 산화에 기인하는 문제로서 실장 공정에 있어서 고온에서 산화가 가속적으로 진행하는 것이 문제가 된다. 본딩 공정에서는 반도체 소자가 탑재된 스테이지는 150 내지 300℃로 가열되고 있기 때문에, 루프 형성에 의하여 접속된 와이어도 고온에 방치된다. 단자 수가 500핀을 넘는 다핀계 LSI에서는 접속된 와이어의 고온 방치는 수십 초를 넘는 경우도 있다. 본딩 후에 대기 중에서 몇 일간 더 방치되는 경우도 있으므로, 초기에 산화가 진행하는 것은 품질상으로도 불리하다. 고온 방치에 의하여 와이어 표면이 산화되는 것은 신뢰성을 열화시키거나 품질 관리를 곤란하게 하는 등 불량의 원인이 된다. 예를 들면, 와이어 표면의 산화에 의하여, 밀봉 수지와 와이어 표면의 밀착성이 변화하고, 그 계면에 수분이 침수하기 쉬워져, 장기 신뢰성이 저하하는 것 등이 염려된다. As a problem due to wire oxidation, an accelerated oxidation proceeds at a high temperature in the mounting process. In the bonding step, since the stage on which the semiconductor element is mounted is heated to 150 to 300 ° C, the wire connected by loop formation is also left at a high temperature. In multi-pin LSIs with more than 500 pin terminals, the high temperature of connected wires may exceed several tens of seconds. Since it may be left to stand for several days in air | atmosphere after bonding, it is also unfavorable for the oxidation to advance initially. Oxidation of the wire surface due to high temperature neglect causes a failure such as deterioration of reliability or difficulty in quality control. For example, due to oxidation of the wire surface, the adhesiveness between the sealing resin and the wire surface is changed, water is easily submerged at the interface, and there is a concern that the long-term reliability is lowered.
상기 외층의 두께가 0.021 내지 0.12 ㎛이고, 외층 내에 있어서, 금속 M의 농도가 총계로 96 mol% 이상인 영역의 두께가 0.002 내지 0.06 ㎛인 반도체 장치용 본딩 와이어라면, 와이어 본딩 공정에 있어서 접속된 와이어가 가열 스테이지 상에 탑재되어 있는 동안에 산화를 억제하는 것에 유효하다. 외층의 두께의 관리만으로는 고온 산화를 저감하는 것은 곤란하고, 외층의 조성, 특히 금속 M의 농도가 상당히 높은 영역이 산화 억제에 작용하는 것을 밝혀내었다. 외층 내에 금속 M이 96 mol% 이상인 고농도의 영역이 있으면, 고온 가열되어도 산소의 내부 진입과 와이어 표면으로의 구리의 확산을 동시에 억제하는 높은 효과를 얻을 수 있다. 금속 M이 96 mol% 이상인 영역의 두께가 0.002 ㎛ 이상이면, 스테이지 상에서의 가열 시간에 있어서의 산화를 억제할 수 있고, 한편, 이 두께가 0.06 ㎛를 넘으면, 용융·응고된 볼부의 진원성이 불안정하게 되어, 생산성이 저하하는 것이 염려된다. 좋기로는, 금속 M이 96 mol% 이상인 고농도의 영역이 두께 0.004 내지 0.05 ㎛이면, 파워계 IC 등에 사용되는 선 직경 35 ㎛ 이상의 태선에서도, 고온 산화를 억제하는 높은 효과를 얻을 수 있다. 이 고순도 영역의 위치는 반드시 최표면일 필요는 없고, 외층 내에 존재함으로써 효과를 얻을 수 있다. 좋기로는, 이 고순도 영역은 외층의 표면 근방에 위치하는 것이 좋고, 구체적으로는, 외층 두께의 반보다 표면 측에 위치함으로써 고온 산화를 억제하는 현저한 효과를 얻을 수 있다. If the thickness of the said outer layer is 0.021-0.12 micrometer, and the bonding wire for semiconductor devices whose thickness of the metal M concentration is 96 mol% or more in the outer layer is 0.002-0.06 micrometer in total, the wire connected in the wire bonding process. Is effective for suppressing oxidation while is mounted on the heating stage. It was found that it is difficult to reduce the high temperature oxidation only by managing the thickness of the outer layer, and it was found that the region of the outer layer, particularly the region of which the concentration of metal M is considerably high, acts on the inhibition of oxidation. If there is a high concentration region in which the metal M is 96 mol% or more in the outer layer, a high effect of simultaneously suppressing oxygen ingress and diffusion of copper to the wire surface can be obtained even when heated at a high temperature. When the thickness of the region where the metal M is 96 mol% or more is 0.002 µm or more, oxidation in the heating time on the stage can be suppressed. On the other hand, when the thickness exceeds 0.06 µm, the roundness of the molten and solidified ball portion It becomes unstable and fears that productivity falls. Preferably, when the high concentration region where the metal M is 96 mol% or more has a thickness of 0.004 to 0.05 µm, a high effect of suppressing high temperature oxidation can be obtained even in a thick wire having a diameter of 35 µm or more used in power system IC or the like. The position of this high purity region is not necessarily the outermost surface, and the effect can be obtained by being in the outer layer. Preferably, this high purity region is preferably located in the vicinity of the surface of the outer layer, and specifically, the remarkable effect of suppressing high temperature oxidation can be obtained by being located at the surface side rather than half of the outer layer thickness.
다양화하는 LSI 실장 구조, 접속 기술에 적응하려면 전술한 외층 두께 0.021 내지 0.12 ㎛와 같이 비교적 두꺼운 외층을 가진 본딩 와이어에서도, 미끄러짐성, 표면 깎임, 풀림성 등의 성능 향상이 더욱 요구되는 경우가 있다. 캐필러리의 관통 구멍과 와이어 표면과의 미끄러짐성이 저하하면, 루프 형상이 불균일하게 되는 원인이 된다. 표면 깎임은 루프 제어하는 과정에서 와이어 표면에 스크래치, 깎임 등이 발생하고, 캐필러리의 구멍 막힘의 원인되거나 절삭 부스러기가 인접한 와이어에 접촉하면 전기적 쇼트 불량을 일으켜, 실용상 문제가 된다. 풀림성이 저하하면, 스풀로부터 와이어가 풀려나올 때에, 와이어의 굴곡 등의 변형이 일어나서, 그것이 접속된 루프 형상의 직선성을 저하시키거나, 풀림성의 저하가 현저한 경우에는 와이어가 파단하여 장치가 정지하는 경우도 있다. 이러한 표면 성능을 한층 더 개선함으로써, 협피치 접속, 다단 접속(Multi-tier bonding) 등 어려운 루프 제어가 요구되는 최신의 실장 니즈에도 안정적인 양산성이 확보된다. In order to adapt to the diversified LSI mounting structure and connection technology, even in a bonding wire having a relatively thick outer layer such as the outer layer thickness of 0.021 to 0.12 μm, performance improvement such as slipperiness, surface shaping, and unwinding may be further required. . If the slipperiness | lubricacy of the through-hole of a capillary and the wire surface falls, it will become a cause of a nonuniform loop shape. Surface shaping causes scratches, shavings, and the like on the surface of the wire during loop control, and causes short circuits of the capillary, or short circuits of cutting chips in contact with adjacent wires, causing electrical short defects. When the loosening property is lowered, when the wire is released from the spool, deformation such as bending of the wire occurs, and the linearity of the loop shape to which it is connected is reduced, or when the loosening property is noticeably lowered, the wire breaks and the apparatus stops. In some cases. By further improving such surface performance, stable mass production is ensured even in the latest mounting needs requiring difficult loop control such as narrow pitch connection and multi-tier bonding.
이들 미끄러짐성, 표면 깎임, 풀림성 등 와이어 표면에 기인하는 특성을 개선하려면, 탄소, 산소 등 비금속 원소가 외층의 표면에 농화된 영역을 형성하는 것이 유효한 것을 밝혀내었다. 심재, 외층을 구성하는 금속계 원소의 성분, 조성의 조정만으로는 대응이 곤란하기 때문이다. 이와 같은 표면의 비금속 원소의 영향은 외층 두께와도 관련이 있는 것을 확인하였다. 전술한 0.021 내지 0.12 ㎛의 두께의 외층이면, 탄소, 산소 등 비금속 원소의 제어가 효과적으로 작용한다. 상세 메커니즘은 분명하지 않지만, 두께가 0.021 ㎛ 미만의 얇은 경우에는 심재의 기계적 특성 등의 영향이 강하고, 또한, 0.12 ㎛ 이상의 상당히 두꺼운 경우에는 외층의 강도, 금속 조직 등이 지배적으로 기능하여, 외층 표면의 비금속 원소의 제어에 의하여 성능을 향상하는 것이 어렵기 때문이라고 생각할 수 있다. In order to improve the characteristics due to the wire surface such as slipperiness, surface chipping, and loosening property, it has been found that it is effective to form regions in which nonmetallic elements such as carbon and oxygen are concentrated on the surface of the outer layer. This is because it is difficult to cope only by adjusting the components and the composition of the metal element constituting the core material and the outer layer. It was confirmed that the influence of the nonmetallic element on the surface was also related to the outer layer thickness. If it is the outer layer of 0.021-0.12 micrometer thickness mentioned above, control of nonmetallic elements, such as carbon and oxygen, will act effectively. Although the detailed mechanism is not clear, when the thickness is less than 0.021 μm, the influence of the mechanical properties of the core material is strong, and when the thickness is considerably thicker than 0.12 μm, the strength of the outer layer, the metallographic structure, etc. dominate, and the surface of the outer layer It is considered that it is difficult to improve the performance by controlling the nonmetallic element of.
탄소, 산소의 농도 계산에 한하여, 구리, 금속 M 등의 금속계 원소, 탄소, 산소 및 질소의 각 원소 등의 비금속계 원소를 총계하여 농도를 산출한다. 이것에 대하여, 전술한 외층, 심재 등의 금속 M, 구리의 농도 계산에 있어서는 표면 근방의 탄소, 산소 등의 비금속 원소를 제외하고, 금속계 원소만을 총계하여 계산한 농도 값을 사용하고 있다. 이러한 2 종류의 농도 계산법을 구분하여 사용함으로써, 사용 성능과의 관련성을 보다 명확하게 할 수 있다. 탄소, 산소는 표면에 농화하고 있고, 그 영역은 최표면으로부터 깊이 방향으로 0.01 ㎛ 이내의 표면 근방에 존재할 뿐, 탄소, 산소는 외층 내부 및 심재에는 함유되어 있지 않다. 탄소, 산소가 영향을 미치는 특성은 주로 미끄러짐성, 표면 깎임, 풀림성 등에 한정된다. 전술한 외층, 심재의 주요 구성인 금속 M, 구리, 일부의 합금화 원소 등에 관하여 설명한 대부분의 특성(TCT 시험, 리플로우 내성, 웨지 접합성, 볼 접합성 등)은 금속 M, 구리 등의 금속계 원소의 성분, 조성에 의하여 지배되고 있고, 탄소, 산소의 직접적인 영향은 작다는 것을 확인하였다. Only in the calculation of the concentration of carbon and oxygen, the concentration is calculated by totalizing nonmetallic elements such as metal elements such as copper and metal M, and elements of carbon, oxygen and nitrogen. On the other hand, in the above-mentioned calculations of the concentrations of the metals M and copper, such as the outer layer and the core, the concentration values calculated by totally calculating only the metal-based elements except for non-metal elements such as carbon and oxygen in the vicinity of the surface are used. By dividing these two types of concentration calculation methods, the relationship with the use performance can be made clear. Carbon and oxygen are concentrated on the surface, and the region exists only in the vicinity of the surface within 0.01 µm in the depth direction from the outermost surface, and carbon and oxygen are not contained in the outer layer and the core. The properties that carbon and oxygen affect are mainly limited to slipperiness, surface shaping, unwinding, and the like. Most of the properties (TCT test, reflow resistance, wedge bonding, ball bonding, etc.) described with respect to the above-described outer layers and core materials of metal M, copper, and some alloying elements are components of metal-based elements such as metal M and copper. It is confirmed that the composition is dominated by the composition and the direct effects of carbon and oxygen are small.
상기 외층의 두께가 0.021 내지 0.12 ㎛이고, 외층의 최표면의 탄소 농도가 15 내지 80 mol%의 범위이며, 표면으로부터 깊이 방향으로 탄소 농도가 5 내지 80 mol%인 영역(이하, 탄소 농화 영역이라 한다)의 두께가 0.0004 내지 0.01 ㎛인 반도체 장치용 본딩 와이어이면, 와이어 표면의 미끄러짐성을 높여 루프 형상을 안정화하거나, 와이어의 스크래치, 깎임을 억제할 수 있다. 최표면의 탄소 농도의 한정 이유는 탄소 농도가 15 mol% 이상이면 미끄러짐성의 개선에 기여하기 때문이며, 또한 80 mol%를 넘으면 와이어의 접합성이 저하하여, 연속 본딩성이 저하하는 것이 문제가 되는 경우가 있다. 탄소 농도가 5 내지 80 mol%의 범위인 탄소 농화 영역은 적어도 일부는 유기막으로서 존재함으로써, 캐필러리의 관통 구멍과 와이어 표면과의 마찰을 저감시키는 충분한 버퍼 기능을 가질 것이 기대된다. 탄소 농화 영역의 두께가 0.0004 ㎛이상이면, 미끄러짐성을 높이는 버퍼 기능을 얻을 수 있고, 0.O1 ㎛를 넘으면 연속 본딩성이 저하하여, 특히 선 직경 20 ㎛ 이하의 세선에서는 접착 불량(Non-stick fai1ure)이 문제가 된다. 좋기로는, 탄소 농화 영역의 두께가 0.0007 내지 0.007 ㎛의 범위이면, 미끄러짐성을 향상시켜 와이어의 스크래치, 깎임을 억제하는 효과와 웨지 접합에서의 제조 마진을 확대하는 효과 등에 의하여, 본딩 속도를 빠르게 하는 것이 가능하게 되고, 생산성의 향상에 더 기여할 수 있다. The outer layer has a thickness of 0.021 to 0.12 µm, a carbon concentration at the outermost surface of the outer layer in a range of 15 to 80 mol%, and a carbon concentration of 5 to 80 mol% in the depth direction from the surface (hereinafter referred to as carbon enrichment region). In the case of a bonding wire for a semiconductor device having a thickness of 0.0004 to 0.01 µm, the slipperiness of the wire surface can be increased to stabilize the loop shape, or to prevent scratches and chipping of the wire. The reason for limiting the carbon concentration of the outermost surface is that when the carbon concentration is 15 mol% or more, it contributes to the improvement of slipperiness. When the carbon concentration exceeds 80 mol%, the bondability of the wire is lowered and the continuous bonding property is sometimes a problem. have. The carbon enriched region having a carbon concentration in the range of 5 to 80 mol% is expected to have a sufficient buffer function to reduce friction between the through hole of the capillary and the wire surface by at least partially present as an organic film. If the thickness of the carbon-concentrated region is 0.0004 µm or more, a buffer function for improving slipperiness can be obtained. If the thickness of the carbon-concentrated region is more than 0.1 µm, the continuous bonding property is lowered. fai1ure) is a problem. Specifically, when the thickness of the carbon enriched region is in the range of 0.0007 to 0.007 µm, the bonding speed is increased by the effect of improving slipperiness, suppressing scratches and chipping of the wire, and expanding the manufacturing margin at wedge joining. It is possible to do this, and further contribute to the improvement of productivity.
전술한, 외층 표면의 탄소 농도를 제어하는 수법으로서, 예를 들면, 와이어 제조 공정에 있어서, 신선 공정에서의 윤활액, 신선 속도, 세정 및 건조 시간 등의 조정 또는 소둔 공정에서의 방청제·윤활제 등의 도포, 침지 조건, 세정 및 건조 등의 조정을 필요에 따라 선택, 적정화하는 것이 유효하다. 그 중에서도, 신선, 소둔 등 공정의 도중 또는 마지막에 있어서, 와이어 표면에 방청제·계면 활성제 등을 도포하는 것이 유효하다. 도포제의 조건(용제, 용매, 농도, 온도, 침지 시간·속도), 세정 조건(온도, 침지 시간), 건조 조건(가스, 온도, 풍량) 등을 적정화함으로써, 전술한 외층 표면의 탄소 농화 영역을 제어하는 것이 가능하게 된다. 방청제로는 외층의 성분, 조성 등에 따라서 선택지는 많지만, 예를 들면, 트리아졸, 벤조트리아졸, 이미다졸, 또는 그들의 유도체 등 구리용 방청제의 이용도 가능하다. 또한, 신선 공정의 액조(液槽) 내에 첨가하는 윤활제도 많은 종류가 있으나, 성분 구성에서는 기름, 비누, 계면 활성제 등의 혼합이 기본이며, 그것들 주성분의 선정, 배합비 등을 적정화하는 것이 중요하다. 공정의 추가, 정정의 관점에서 분류하면, 재현성, 정밀도가 높은 농도 관리를 하기 위하여, 표면의 탄소 농도의 제어를 주목적으로 한 공정을 신규 추가하는 경우와, 제조 비용을 우선하고 공정을 늘리지 않기 위하여, 현행의 와이어 제조 공정의 약간의 개량, 조건 변경 등으로 대응하는 경우로 나눌 수 있다. 어느 방법에서나 종합적으로 프로세스를 적정화함으로써, 소망하는 탄소 농도의 영역을 형성할 수 있다.As a method of controlling the carbon concentration of the outer layer surface described above, for example, in the wire manufacturing process, such as a lubricating liquid in a drawing process, a drawing speed, cleaning and drying time, etc. It is effective to select and optimize adjustments such as coating, dipping conditions, washing and drying as necessary. Especially, it is effective to apply a rust inhibitor, surfactant, etc. to the wire surface in the middle or the end of a process, such as drawing and annealing. By optimizing the conditions of the coating agent (solvent, solvent, concentration, temperature, immersion time and speed), washing conditions (temperature, immersion time), drying conditions (gas, temperature, air volume), the carbon-enriched region on the surface of the outer layer described above is It becomes possible to control. As the rust inhibitor, there are many choices depending on the components, composition, etc. of the outer layer. For example, rust inhibitors for copper such as triazole, benzotriazole, imidazole, or derivatives thereof can also be used. In addition, there are many kinds of lubricants to be added into the liquid bath of the drawing process. However, in the component composition, mixing of oil, soap, surfactants, and the like is the basic, and it is important to optimize the selection of the main ingredients and the blending ratio. In terms of process addition and correction, in order to achieve high reproducibility and high-precision concentration control, a new process whose main purpose is to control the carbon concentration on the surface, and to prioritize manufacturing costs and not increase the process It can be divided into the case corresponding to the slight improvement of the current wire manufacturing process, a change of conditions, etc. In either method, by appropriately optimizing the process, a region having a desired carbon concentration can be formed.
와이어의 풀림성은 기본적인 사용 성능의 하나이지만, 복층 구리 와이어에서의 지배 요인은 분명하게 밝혀지지 않은 점이 많이 남아 있다. 통상은 200 내지 3000 m의 길이가 긴 와이어를 어느 정도의 응력을 가하면서, 스풀에 감은 상태로 출하한다. 이 스풀을 본딩 장치에 설치하여 스풀을 회전시킴으로써 와이어를 계속 풀어내면서, 연속 본딩을 실시한다. 풀림성이 저하하면, 루프 형성 시에 원호상의 컬 불량, "〈" 모양으로 소성 변형하는 굴곡 불량 등이 발생하여, 루프의 직선성이 저하하거나 와이어 파단 등이 문제가 된다. 반대로 풀림성만을 우선하여 권취 텐션을 지나치게 약하게 하면, 권취 상태가 무너지는 경우가 발생하여, 스풀에 권취된 와이어 전체가 사용 불가능하게 되는 다른 문제가 발생한다. Unwinding of the wire is one of the basic usage performances, but the dominant factor in the multilayer copper wire remains unclear. Usually, a long wire of 200 to 3000 m is shipped while being wound on a spool while applying some stress. This spool is attached to a bonding apparatus, and continuous bonding is performed, continuing to unwind a wire by rotating a spool. When the loosening property is lowered, arc-like curl defects and bending defects plastically deformed in a " " shape are generated at the time of loop formation, and the linearity of the loops is deteriorated or wire breakage is a problem. On the contrary, if the winding tension is excessively weakened by giving priority only to the loosening property, the wound state may be broken, and another problem may occur that the entire wire wound on the spool becomes unusable.
복층 구리 와이어의 풀림성을 저하시키는 주된 요인으로서 스풀에 감긴 상태의 와이어의 결손, 권취의 붕괴, 와이어 접착 등이 원인이 되는 경우가 많다. 이와 같은 불량을 억제하는 데 있어서, 외층 표면의 산소 농도의 제어가 유효하다는 것을 밝혀내었다. 외층 표면의 산화를 제어하여, 스풀에 감긴 와이어의 외층이 접촉하는 계면 근방에서, 외층끼리의 금속 접합을 억제하면서, 와이어의 미끄러짐 속도, 마찰 등을 미묘하게 조정함으로써, 풀림성이 향상된다. 한편, 산화 막이 너무 강고하게 되면, 복층 강 와이어의 장점인 접합성을 해치는 위험성이 있기 때문에, 산소의 농도·막 두께 등의 관리가 중요하다. 예를 들면, 단일의 산화 막만을 형성하더라도 풀림성을 종합적으로 개선하는 것은 곤란하고, 최표면 및 깊이 방향의 산소 농도를 적정화하는 것이 유효하다. 또한, 복층 구리 와이어의 외층 두께에 의하여도 표면 산소의 적정 조건은 변화하기 때문에, 외층 두께, 산소의 표면 농도, 깊이 방향의 산소 농도 등을 종합적으로 적정화하는 것이 중요하다. As a main factor which lowers the loosening property of a multilayer copper wire, the defect of the wire wound in the spool, the collapse of winding, the wire adhesion, etc. are a cause in many cases. In suppressing such a defect, it turned out that the control of the oxygen concentration of the outer layer surface is effective. The loosening property is improved by controlling the sliding speed, friction, etc. of the wire while controlling the oxidation of the surface of the outer layer and suppressing metal bonding between the outer layers near the interface where the outer layer of the wire wound on the spool contacts. On the other hand, if the oxide film is too hard, there is a risk of spoiling the bondability, which is an advantage of the multilayer steel wire. Therefore, management of oxygen concentration, film thickness, and the like is important. For example, even if only a single oxide film is formed, it is difficult to comprehensively improve the annealing property, and it is effective to optimize the oxygen concentration in the outermost surface and the depth direction. In addition, since the proper conditions of surface oxygen change also with the outer layer thickness of a multilayer copper wire, it is important to totally optimize outer layer thickness, surface concentration of oxygen, oxygen concentration in a depth direction, etc.
상기 외층의 두께가 0.021 내지 0.12 ㎛이고, 외층 최표면의 산소 농도가 1 내지 25 mol%의 범위이며, 이 외층 표면에 산소 농도(이하, 산소 농화 영역이라 한다)가 0.2 내지 25 mol% 범위인 영역의 두께가 0.0005 내지 0.007 ㎛의 범위인 반도체 장치용 본딩 와이어이면, 스풀로부터 와이어 풀림성의 향상, 루프 직선성의 향상이나, 와이어 접합성의 향상 등을 동시에 실현되는 것이 가능하게 된다. 최표면의 산소 농도가 1 mol% 미만이면 외층끼리의 접착 불량(소부 불량)이 일어나고, 25 mol%를 넘으면 세선 등의 접합성이 저하되기 때문이다. 산소 농도가 0.2 내지 25 mol%인 산소 농화 영역은 외층끼리의 접촉부에서 결손되어, 접착 불량 등을 억제하는데 유효하게 작용하고, 산소 농화 영역이 0.0005㎛ 미만이면 풀림성을 향상하는 효과가 작고, 0.007 ㎛를 넘으면 접합성이 저하되기 때문이다. The outer layer has a thickness of 0.021 to 0.12 µm, an oxygen concentration on the outermost surface of the outer layer in a range of 1 to 25 mol%, and an oxygen concentration (hereinafter referred to as an oxygen enriched region) on the outer layer surface in a range of 0.2 to 25 mol%. If the thickness of an area | region is a bonding wire for semiconductor devices in the range of 0.0005-0.007 micrometer, it becomes possible to implement simultaneously the improvement of wire unwinding property, the improvement of loop linearity, the improvement of wire joining property, etc. from a spool. This is because when the oxygen concentration on the outermost surface is less than 1 mol%, adhesion failure (caused failure) between the outer layers occurs. When the oxygen concentration on the outermost surface exceeds 25 mol%, the bonding properties such as thin wires decrease. Oxygen-concentrated regions having an oxygen concentration of 0.2 to 25 mol% are effective in suppressing adhesion defects due to defects in the contact portions of the outer layers. When the oxygen-concentrated regions are less than 0.0005 µm, the effect of improving the loosening property is small, and 0.007 It is because joinability will fall when it exceeds micrometer.
전술한 외층 표면의 산소 농도를 제어하는 수법으로서 와이어 제조 공정에서의 외층의 산화를 조정하는 것이 유효하다. 예를 들면, 신선 공정에서의 세정, 건조 등의 조정, 소둔 공정에서의 열 이력, 분위기 가스의 유량, 소둔 시간, 냉각시의 분위기 등의 조정을, 필요에 따라서 선택, 적정화하는 것이 유효하다. 또한, 소둔 공정과 신선 공정을 조합하여 종합적으로 프로세스를 적정화하면, 소망하는 산소 농도의 영역을 형성하는 데 유리하게 된다. 그 중에서도, 소둔 공정에 있어서 가열 조건(노내 온도 분포, 왕복운동 속도)이나, 냉각 조건(가스 종류, 유량, 쉴드성) 등을 적정화하는 것이 외층 표면의 산소 농화 영역을 제어하는데 유효하다. 또한, 신선→소둔→신선→소둔의 순서로 실시하고, 전술한 바와 같은 소둔 조건, 신선 조건의 적정화를 조합함으로써, 깊이 방향의 산소 농도 분포의 제어에 있어서의 재현성을 향상시킬 수 있다. 공정의 추가, 수정의 관점에서 분류하면, 재현성, 정밀도가 높은 농도 관리를 실시하기 위하여, 표면의 산소 농도의 제어를 주목적으로 한 공정을 신규 추가하는 경우와, 제조 비용을 우선하여 공정을 늘리지 않기 위하여, 현행의 와이어 제조 공정의 약간의 개량, 조건 변경 등에서 대응하는 경우로 나뉜다. It is effective to adjust oxidation of the outer layer in a wire manufacturing process as a method of controlling the oxygen concentration of the surface of the outer layer mentioned above. For example, it is effective to select and optimize adjustment of washing | cleaning in a drawing process, drying, etc., adjustment of the heat history in an annealing process, the flow volume of atmospheric gas, annealing time, the atmosphere at the time of cooling, etc. as needed. In addition, when the process is properly optimized by combining the annealing process and the drawing process, it is advantageous to form a region having a desired oxygen concentration. Especially, it is effective to control the oxygen concentration region of the outer layer surface by optimizing the heating conditions (inner temperature distribution, reciprocating speed), cooling conditions (gas type, flow rate, shielding property) and the like in the annealing step. In addition, the reproducibility in the control of the oxygen concentration distribution in the depth direction can be improved by combining the annealing conditions and the appropriate conditions of the above-described annealing conditions in the order of drawing-annealing-drawing-annealing. From the standpoint of adding and modifying the process, in order to carry out concentration control with high reproducibility and precision, it is necessary to add a new process whose main purpose is to control the oxygen concentration on the surface, and not increase the process by giving priority to the manufacturing cost. For this reason, the present invention is classified into a case where the current wire manufacturing process is slightly improved, conditions are changed, and the like.
외층을 구성하는 구리 이외의 금속 M이 와이어 전체에 차지하는 농도가 총계로 0.05 내지 3 mol%의 범위인 본딩 와이어이면, TCT 시험에서의 장기 신뢰성의 향상에 추가하여, 볼부의 경화를 억제함으로써, 접합 강도의 증가, 볼 외주에의 알루미늄 전극 재료의 소출(掃出)(aluminium splash 불량)의 저감, 칩 손상의 저감 등에 유리하다. 구리계 본딩 와이어 선단의 볼부는 경도가 높고, 변형시의 가공 경화도 높기 때문에, 접합 시에 알루미늄 전극이 스플래쉬하여 인접하는 전극과의 쇼트 불량을 유발하거나 접합부 바로 아래의 칩에 손상을 입히는 것이 실용상의 과제가 되는 경우가 있다. 와이어 전체에서 차지하는 금속 M의 농도를 낮게 억제함으로써, 금속 M이 볼 중에 고용되어도, 경화의 정도를 억제하는 것이 가능하다. 이때, 와이어 전체에서 차지하는 금속 M의 농도가 총계로 3 mol% 이하이면, 볼의 경화를 억제함으로써, 알루미늄의 스플래쉬를 저감하는 효과를 얻을 수 있고, 또한 좋기로는, 2 mol% 이하이면 스플래쉬를 더 억제하여 양호한 접합을 얻을 수 있다. 0.05 mol% 미만이면 전술한 외층의 두께를 0.021 내지 0.12 ㎛의 범위로 유지하는 것을, 양산 공정에서 안정적으로 실현하는 것이 곤란하게 되는 경우가 있다. If the concentration of the metal M other than the copper constituting the outer layer is in the total range of 0.05 to 3 mol% of the bonding wire, the bonding is suppressed in addition to the improvement of long-term reliability in the TCT test, in addition to the improvement of long-term reliability. It is advantageous to increase the strength, to reduce the aluminum splash material (poor aluminum splash) on the outer circumference of the ball, to reduce the chip damage. Since the ball portion at the tip of the copper-based bonding wire has high hardness and high work hardening during deformation, it is practical to splash the aluminum electrode at the time of joining to cause a short defect with an adjacent electrode or to damage the chip immediately below the junction. There may be a problem. By restraining the density | concentration of the metal M which occupies for the whole wire, even if metal M is solid-solution in a ball, it is possible to suppress the grade of hardening. At this time, if the concentration of the metal M in the entire wire is 3 mol% or less in total, the effect of reducing the splash of aluminum can be obtained by suppressing hardening of the ball, and preferably, if the content is 2 mol% or less, the splash It can further suppress and obtain favorable joining. If it is less than 0.05 mol%, it may become difficult to stably implement | maintain the thickness of the outer layer mentioned above in the range of 0.021-0.12 micrometer in a mass production process.
외층과 심재 사이에 확산층을 가진 본딩 와이어로서, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나, 또는 두 가지가 모두 다른 금속 M 및 구리를 함유하는 외층을 가지고, 상기 외층의 두께가 0.021 내지 0.12 ㎛이며, 외층 최표면의 구리 농도가 0.5 내지 45 mol%인 반도체 장치용 본딩 와이어인 것이 더 좋다. 이 본딩 와이어이면, 볼 접합부의 편심 불량을 저감하는 충분한 효과를 얻을 수 있다. 이것에 의하여, 볼 접합부의 간격이 좁은 협피치 접속에서도 양산성을 더 높이는 것이 가능하게 된다. 여기서의 최표면의 농도란 표면 깊이가 2 ㎚ 정도인 영역에 있어서의 농도이다. A bonding wire having a diffusion layer between the outer layer and the core, the bonding wire having an outer layer which is provided on the core and which contains metal M and copper, which are different in component or composition, or both, wherein the thickness of the outer layer is from 0.021 to It is more preferable that it is the bonding wire for semiconductor devices which is 0.12 micrometer and whose copper concentration of the outermost outermost surface is 0.5-45 mol%. If it is this bonding wire, sufficient effect of reducing the eccentricity defect of a ball joint part can be acquired. Thereby, it becomes possible to further improve mass productivity even in narrow pitch connection with a narrow space | interval of a ball joint. The concentration of the outermost surface here is the concentration in the region whose surface depth is about 2 nm.
외층의 최표면의 구리 농도가 45 mol%를 넘으면, 아크 방전의 분포, 확산이 불균일하게 되기 때문에, 본딩 와이어의 한쪽만을 우선적으로 용융함으로써, 볼 형성 시에 심 어긋남이 일어나는 경우가 있다. 아크 방전은 최표면의 영향이 크고, 구리와 금속 M에서는 전자 방출 등이 다르기 때문에, 와이어 최표면의 구리 농도에 의하여 볼 형상이 변화하는 경우가 있다. 이 구리 농도가 0.5 mol% 이상이면 편심 불량을 저감하는 효과를 얻을 수 있다. 좋기로는, 최표면의 구리 농도가 0.5 내지 30 mol%이면, 볼 직경이 와이어 지름에 대하여 2배 이하인 작은 볼에서도 이형, 화변 모양 등의 불량 형상을 더 효과적으로 억제할 수 있다. 더 좋기로는, 최표면의 구리 농도가 0.5 내지 20 mol%이면, 소볼에서의 진구성이 더 높아지므로, 협피치 접속에 유리하게 된다. If the copper concentration of the outermost surface of the outer layer exceeds 45 mol%, the distribution and diffusion of the arc discharge become nonuniform, so that only one side of the bonding wire is preferentially melted, whereby a misalignment may occur during ball formation. Since the arc discharge has a large influence on the outermost surface, and electrons and the like differ from copper and metal M, the ball shape may change depending on the copper concentration on the outermost surface of the wire. If this copper concentration is 0.5 mol% or more, the effect of reducing an eccentricity defect can be acquired. Preferably, when the copper concentration of the outermost surface is 0.5 to 30 mol%, even a small ball having a ball diameter of 2 times or less with respect to the wire diameter can more effectively suppress defective shapes such as mold release and stools. More preferably, when the copper concentration of the outermost surface is 0.5 to 20 mol%, the true structure in the small balls becomes higher, which is advantageous for narrow pitch connection.
상기 외층의 두께가 0.021 내지 0.12 ㎛이고, 상기 외층의 표면에 구리 농도가 1 내지 30 mol% 범위인 영역(이하, 구리 농화 영역이라 한다)의 두께가 0.0005 내지 0.008 ㎛인 반도체 장치용 본딩 와이어인 것으로, 볼 형성 시에 편심을 억제하고, 또한, 볼 선두부의 오목부 및 볼 표면의 미소 요철 등을 저감할 수 있고, 볼 압착 형상의 안정화와, 볼 접합 강도의 불균일 저감에 의하여, 양산성을 향상시킬 수 있다. 와이어 표면에 구리가 농화한 영역이 있기 때문에, 아크 방전의 확산이 안정화하고, 또한, 볼부의 용융·응고에 있어서의 구리와 금속 M의 혼합을 단시간에 촉진하는 효과가 있다고 생각된다. 상기 외층의 표면에 구리 농도는 1 내지 30 mol%의 범위의 영역이면 상기 효과가 기대된다. 구리 농도가 이 농도 범위의 영역의 두께가 0.0005 ㎛ 이상이면, 오목부 및 미소 요철 등을 억제하는 효과를 얻을 수 있고, 0.008 ㎛를 넘으면 심 어긋남이 발생하여 볼 형상이 다소 불안정하게 될 가능성이 있다. The thickness of the outer layer is 0.021 to 0.12 ㎛, and the bonding wire for a semiconductor device having a thickness of 0.0005 to 0.008 ㎛ of the region (hereinafter referred to as copper thickening region) of the copper concentration in the range of 1 to 30 mol% on the surface of the outer layer By suppressing the eccentricity at the time of ball formation, the concave portion of the ball head and the minute unevenness on the surface of the ball can be reduced, and stabilization of the ball crimp shape and the nonuniformity of the ball joint strength can be achieved. Can be improved. Since there is an area where copper is concentrated on the wire surface, diffusion of arc discharge is stabilized, and it is considered that there is an effect of promoting the mixing of copper and metal M in melting and solidification of the ball portion in a short time. If the copper concentration is in the range of 1 to 30 mol% on the surface of the outer layer, the above effect is expected. If the copper concentration is 0.0005 µm or more in thickness, the effect of suppressing concave portions, minute irregularities, and the like can be obtained. If the copper concentration exceeds 0.008 µm, seam misalignment may occur and the ball shape may become somewhat unstable. .
이 구리 농화 영역의 구성에 대하여, 금속 M과 구리와의 합금 또는 구리 산화물이 포함되어 있어도 좋다. 또한 후자의 구리 산화물이 형성되어 있는 경우, 이 구리 농화 영역과 상기 산소 농화 영역의 적어도 일부가 중복됨으로써, 볼 형성시의 오목부 및 미소 요철의 억제와 풀림성의 개선을 양립하는 높은 효과를 얻을 수 있다. 이 구리 농화 영역의 위치는 반드시 최표면일 필요는 없고, 외층 내에 존재함으로써 효과를 얻을 수 있다. 좋기로는, 이 구리 농화 영역은 외층의 표면 근방에 위치하는 것이 좋고, 구체적으로는, 외층 두께의 1/4보다 표면 측에 위치함으로써 고온 산화를 억제하는 현저한 효과를 얻을 수 있다. 예를 들면, 외층의 최표면에 탄소 농화 영역, 그 하층에 이 구리 농화 영역이 형성되어 있으면, 양호한 볼 형성과 와이어 표면의 스크래치, 깎임의 억제를 양립하는 높은 효과를 얻을 수 있다. About the structure of this copper thickening area | region, the alloy or copper oxide of metal M and copper may be contained. In the case where the latter copper oxide is formed, at least part of the copper enriched region and the oxygen enriched region are overlapped, whereby a high effect of achieving both suppression of recesses and fine unevenness during ball formation and improvement of loosening property can be obtained. have. The position of this copper thickened region does not necessarily need to be the outermost surface, and the effect can be obtained by being in the outer layer. Preferably, this copper thickened region is preferably located near the surface of the outer layer. Specifically, the copper concentrated region is located closer to the surface side than 1/4 of the outer layer thickness, and thus, a remarkable effect of suppressing high temperature oxidation can be obtained. For example, when the carbon-concentrated region is formed on the outermost surface of the outer layer and the copper-concentrated region is formed on the lower layer, it is possible to obtain a high effect of achieving good ball formation and suppressing scratching and chipping of the wire surface.
외층, 확산층, 심재 등의 농도 분석에 대하여, 본딩 와이어의 표면으로부터 스패터 등에 의하여 깊이 방향으로 파고들어가면서 분석하는 수법, 또는 와이어 단면에서의 라인 분석 또는 점 분석 등이 유효하다. 전자는 외층이 얇은 경우에 유효하지만, 두꺼워지면 측정 시간이 너무 걸린다. 후자의 단면에서의 분석은 외층이 두꺼운 경우에 유효하고, 또한, 단면 전체의 농도 분포나, 여러 부분에서의 재현성의 확인 등이 비교적 용이하다는 것이 이점이지만, 외층이 얇은 경우에는 정밀도가 저하된다. 본딩 와이어를 경사 연마하고, 확산층의 두께를 확대시켜 측정하는 것도 가능하다. 단면에서는 라인 분석이 비교적 간편하지만, 분석의 정밀도를 향상하고 싶을 때에는 라인 분석의 분석 간격을 좁게 하거나, 계면 근방의 관찰하고 싶은 영역으로 좁혀 점 분석을 하는 것도 유효하다. 농도 분석에 이용하는 분석 장치로는 전자선 마이크로 분석법(EPMA), 에너지 분산형 X선 분석법(EDX), 오제 분광 분석법(AES), 투과형 전자 현미경(TEM) 등을 이용할 수 있다. 특히 AES법은 공간 분해 능력이 높기 때문에, 최표면의 얇은 영역의 농도 분석에 유효하다. 또한, 평균적인 조성의 조사 등에는 표면부로부터 단계적으로 산 등으로 용해하면서, 그 용액 중에 포함되는 농도로부터 용해 부위의 조성을 구하는 것 등도 가능하다. For concentration analysis of the outer layer, the diffusion layer, and the core material, a method of analyzing while penetrating in the depth direction by the spatter or the like from the surface of the bonding wire, or line analysis or point analysis in the wire cross section is effective. The former is effective when the outer layer is thin, but too thick takes too much time to measure. The latter analysis is effective in the case where the outer layer is thick, and it is advantageous that the concentration distribution of the entire cross section, confirmation of reproducibility in various parts, etc. are relatively easy, but when the outer layer is thin, the accuracy is lowered. It is also possible to diagonally polish the bonding wire and to measure the thickness of the diffusion layer by enlarging it. Although the line analysis is relatively easy in the cross section, when it is desired to improve the accuracy of the analysis, it is also effective to narrow the analysis interval of the line analysis or to perform the point analysis by narrowing it to the area to be observed near the interface. As an analytical device used for concentration analysis, electron beam microanalysis (EPMA), energy dispersive X-ray analysis (EDX), Auger spectroscopy (AES), transmission electron microscope (TEM) and the like can be used. In particular, the AES method is effective for the analysis of concentrations in thin regions on the outermost surface because of its high spatial resolution. In addition, it is also possible to calculate | require the composition of a dissolution site | part from the density | concentration contained in the solution, melt | dissolving with an acid etc. step by step from the surface part, etc. in irradiation of an average composition.
외층 중에 농도 구배에 추가하여, 구리와 금속 M을 주체로 하는 금속간 화합물 상이 포함되는 것도 유효하다. 즉, 구리를 주체로 하는 심재와 금속 M의 외층으로 구성되고, 외층의 내부에는 구리의 농도 구배를 가진 부위와, 구리와 금속 M을 가진 금속간 화합물이 1층 이상 포함되어 있는 본딩 와이어에서는 금속간 화합물 상이 본딩 와이어의 강도, 탄성율 등의 기계적 특성을 증가시킴으로써, 루프의 직선성의 향상, 밀봉시의 와이어 흐름의 억제 등에 더 유효하다. It is also effective to include an intermetallic compound phase mainly composed of copper and metal M in addition to the concentration gradient in the outer layer. That is, in the bonding wire which consists of the core material which mainly consists of copper, and the outer layer of metal M, and the inside of an outer layer contains the site | part which has a concentration gradient of copper, and the intermetallic compound which has copper and metal M, the metal is a metal. The hepatic compound phase is more effective in improving the linearity of the loop, suppressing wire flow during sealing, etc. by increasing mechanical properties such as strength, elastic modulus of the bonding wire.
본 발명의 본딩 와이어를 제조함에 있어서, 심재의 표면에 외층을 형성하는 공정, 외층, 확산층, 심재 등의 구조를 제어하는 가공·열처리 공정이 필요하다. 우선, 외층, 심재의 조성, 두께를 제어하려면, 전술한 외층을 형성하는 공정에 있어서, 외층 형성의 초기 단계에서의 두께, 조성의 관리가 중요하다. In manufacturing the bonding wire of this invention, the process of forming an outer layer on the surface of a core material, and the process and heat processing process of controlling structures, such as an outer layer, a diffusion layer, and a core material, are needed. First, in order to control the composition and thickness of an outer layer and a core material, in the process of forming an outer layer mentioned above, it is important to manage thickness and composition in the initial stage of outer layer formation.
외층을 구리의 심재의 표면에 형성하는 방법에는 도금법, 증착법, 용융법 등이 있다. 도금법으로는 전해 도금, 무전해 도금법 어느 것으로도 제조 가능하다. 스트라이크 도금, 플래쉬 도금이라 불리는 전해 도금은 도금 속도가 빠르고, 하지와의 밀착성도 양호하다. 무전해 도금에 사용하는 용액은 치환형과 환원형으로 분류되고, 막이 얇은 경우에는 치환형 도금만으로도 충분하지만, 두꺼운 막을 형성하는 경우에는 치환형 도금 후에 환원형 도금을 단계적으로 실시하는 것이 유효하다. 무전해법은 장치 등이 간편하고, 용이하지만, 전해법보다 시간을 요한다. The method of forming an outer layer on the surface of a copper core material includes a plating method, a vapor deposition method, a melting method, and the like. As the plating method, any of electrolytic plating and electroless plating can be produced. Electrolytic plating, such as strike plating and flash plating, has a high plating speed and good adhesion to the base. The solution used for electroless plating is classified into a substitution type and a reduction type, and when the film is thin, only the substitution type plating is sufficient, but when forming a thick film, it is effective to perform reduction type plating stepwise after the substitution type plating. The electroless method is simple and easy for an apparatus and the like, but requires more time than the electrolytic method.
증착법으로는 스패터법, 이온 도금법, 진공 증착 등의 물리 흡착과 플라즈마 CVD 등의 화학 흡착을 이용할 수 있다. 모두 건식이며, 막 형성 후의 세정이 불필요하고, 세정시의 표면 오염 등의 걱정이 없다. As the vapor deposition method, physical adsorption such as a spatter method, an ion plating method, vacuum deposition, and chemical adsorption such as plasma CVD can be used. All are dry, and cleaning after film formation is unnecessary, and there is no worry of surface contamination at the time of washing.
도금 또는 증착을 실시하는 단계에 대하여, 목적으로 하는 선 직경으로 금속 M의 막을 형성하는 수법과 태경(太徑)의 심재에 막을 형성하고나서, 목적으로 하는 선 직경으로 복수 회 신선하는 수법 모두 유효하다. 전자의 최종 지름으로 막을 형성하면 제조, 품질 관리 등이 간편하고, 후자의 막 형성과 신선의 조합은 막과 심재와의 밀착성을 향상시키는데 유리하다. 각각의 형성법의 구체적인 예로서 목적으로 하는 선 직경의 구리선에, 전해 도금 용액 중에 와이어를 연속적으로 담그고 꺼내어 막을 형성하는 수법, 또는 전해 또는 무전해의 도금 욕 중에 굵은 구리선을 침지하여 막을 형성한 후에, 와이어를 연장하여 최종 지름에 도달하는 수법 등이 가능하다. For the step of plating or vapor deposition, both a method of forming a film of metal M at a desired wire diameter and a method of forming a film on a core core and then drawing a plurality of times at a desired wire diameter are effective. Do. Formation of the film with the final diameter of the former makes it easy to manufacture, quality control, etc., and the latter combination of film formation and freshness is advantageous for improving the adhesion between the film and the core material. As a specific example of each formation method, after a method of continuously dipping a wire in an electrolytic plating solution and taking it out to form a film or forming a film by immersing a thick copper wire in an electrolytic or electroless plating bath, It is possible to extend the wire to reach the final diameter.
외층을 형성한 후의 가공 공정에서는 롤 압연, 스웨이징, 다이스 신선 등을 목적에 따라 선택, 구분하여 사용한다. 가공 속도, 압하율 또는 다이스 감면율 등에 의하여, 가공 조직, 전위, 결정립계의 결함 등을 제어하는 것은 외층의 구조, 밀착성 등에도 영향을 미친다. In the processing process after forming an outer layer, roll rolling, swaging, die drawing, etc. are selected and used according to the objective. Controlling the processing structure, dislocations, defects in grain boundaries, and the like by the processing speed, the reduction ratio, the die reduction rate, or the like also affects the structure of the outer layer, the adhesiveness, and the like.
열처리 공정에서는 외층과 심재의 계면에서, 구리와 금속 M과의 상호 확산을 조장한다. 목적에 따라서, 열처리를 1회 또는 복수 회 실시하는 것이 유효하다. 외층 및 확산층의 구조로 소망으로 하는 막 두께, 조성을 얻으려면, % 오더의 농도, ㎚ 오더의 막 두께 등을 엄격한 정밀도로 제어하는 제조 기술이 요구된다. 열처리 공정은 막 형성 직후의 소둔, 가공 도중에서의 소둔, 최종 지름에서의 마무리 소둔으로 분류되며, 이들을 선택, 구분하여 사용하는 것이 중요하다. In the heat treatment step, at the interface between the outer layer and the core material, mutual diffusion between the copper and the metal M is encouraged. Depending on the purpose, it is effective to perform the heat treatment once or plural times. In order to obtain a desired film thickness and composition in the structure of the outer layer and the diffusion layer, a manufacturing technique for controlling the concentration of the% order, the film thickness of the nm order, and the like with strict precision is required. The heat treatment step is classified into annealing immediately after film formation, annealing during processing and finishing annealing at the final diameter, and it is important to select and use these separately.
단순하게 와이어를 가열하는 것만으로 외층의 표면 및 내부에서의 구리의 분포를 제어할 수 있는 것은 아니다. 통상의 와이어 제조에서 사용되는 최종 선 직경에서의 가공 변형 제거 소둔을 그대로 적용하더라도, 외층과 심재와의 밀착성의 저하에 의하여 루프 제어가 불안정하게 되거나, 와이어 길이 방향의 외층의 균질성, 와이어 단면에서의 외층, 확산층 등의 분포를 제어하는 것은 곤란하다. 이에 열처리의 타이밍, 온도, 속도, 시간 등의 제어가 중요하다. Simply heating the wire does not control the distribution of copper on the surface and inside of the outer layer. Even if the processing strain removal annealing at the final wire diameter used in normal wire manufacturing is applied as it is, loop control may become unstable due to a decrease in the adhesion between the outer layer and the core, or the homogeneity of the outer layer in the wire length direction, It is difficult to control the distribution of the outer layer, the diffusion layer, and the like. Therefore, it is important to control the timing, temperature, speed, and time of the heat treatment.
가공과 열처리를 조합하여 확산의 진행도를 제어함으로써, 소망하는 막 두께, 조성, 구조를 제어하는 것이 가능하게 된다. 열처리하기 전의 가공 이력은 외층과 심재와의 계면에서의 조직 등에 관계하기 때문에, 열처리에서의 확산 거동에도 영향을 미친다. 어느 가공 단계에서 열처리를 하는가에 따라, 최종 외피 층, 확산층의 조성, 두께 등이 변화한다. 일례로 가공 도중에 중간 소둔을 실시한 후에, 와이어를 신선하고, 최종 지름으로 마무리 소둔을 실시하는 공정으로 작성한 본딩 와이어에서는 중간 소둔을 실시하지 않는 공정과 비교하여, 외층, 확산층의 조성, 농도 구배가 변화하는 것을 확인하였다. By controlling the progress of diffusion by combining processing and heat treatment, it is possible to control the desired film thickness, composition and structure. Since the processing history before heat treatment is related to the structure at the interface between the outer layer and the core material and the like, it also affects the diffusion behavior in the heat treatment. Depending on which processing step is heat-treated, the composition, thickness, etc. of the final skin layer, the diffusion layer, and the like change. For example, after the intermediate annealing is performed in the middle of processing, the composition of the outer layer, the diffusion layer, and the concentration gradient are changed in the bonding wire prepared by the step of drawing the wire and performing the final annealing to the final diameter as compared with the step of not performing the intermediate annealing. It was confirmed that.
열처리법으로서 와이어를 연속적으로 왕복운동시키면서 열처리를 하고, 또한, 일반적인 열처리인 로 내 온도를 일정하게 하지 않고, 로 내에서 온도 경사를 둠으로써, 본 발명이 특징으로 하는 외층 및 심재를 가진 본딩 와이어를 양산하는 것이 용이하게 된다. 구체적인 사례에서는 국소적으로 온도 경사를 도입하는 방법, 온도를 로 내에서 변화시키는 방법 등이 있다. 본딩 와이어의 표면 산화를 억제하는 경우에는 N2나 Ar 등의 비활성 가스를 로 내로 흘려 보내면서 가열하는 것도 유효하다. Bonding wires having an outer layer and a core material characterized by the present invention characterized by heat treatment while continuously reciprocating the wire as a heat treatment method and by keeping the temperature gradient in the furnace without making the temperature in the furnace which is a general heat treatment constant. It is easy to mass-produce. Specific examples include a method of introducing a temperature gradient locally and a method of changing the temperature in a furnace. In the case of suppressing surface oxidation of the bonding wire, it is also effective to heat while flowing an inert gas such as N 2 or Ar into the furnace.
온도 경사의 방식으로는 로 입구 근방에서의 정(正)의 온도 경사(와이어의 왕복운동 방향 대하여 온도가 상승), 안정 온도 영역, 노출구 근방에서의 부(負)의 온도 경사(와이어의 왕복운동 방향에 대하여 온도가 하강) 등, 복수의 영역에서 온도에 경사를 두는 것이 효과적이다. 이에 의해, 로 입구 근방에서 외층과 심재와의 박리 등을 일으키지 않고 밀착성을 향상시키고, 안정 온도 영역에서 구리와 금속 M과의 확산을 촉진하여 소망하는 농도 구배를 형성하고, 또한 로 출구 근방에서 표면에서의 구리의 과잉 산화를 억제함으로써, 얻은 본딩 와이어의 접합성, 루프 제어성 등을 개선할 수 있다. 이와 같은 효과를 얻으려면, 출입구에서의 온도 구배를 10 ℃/㎝ 이상 두는 것이 좋다. In the method of temperature gradient, a positive temperature gradient near the inlet of the furnace (temperature rises with respect to the reciprocating direction of the wire), a stable temperature range, and a negative temperature gradient near the exposed port (wire reciprocation) It is effective to incline the temperature in a plurality of regions such as the temperature decreases with respect to the movement direction. This improves adhesion without causing peeling of the outer layer and the core in the vicinity of the furnace inlet, promotes diffusion of copper and metal M in the stable temperature range, and forms a desired concentration gradient, and also provides a surface near the furnace exit. By suppressing excessive oxidation of copper in, the bonding property, loop controllability, etc. of the obtained bonding wire can be improved. In order to acquire such an effect, it is good to keep the temperature gradient in an entrance and exit 10 degreeC / cm or more.
온도를 변화시키는 방법으로는 로 내를 복수의 영역으로 분할하고, 각 영역에서 다른 온도 제어를 함으로써 온도의 분포를 만드는 것도 유효하다. 예를 들면, 로 내를 3 부분 이상으로 분할하여, 독립적으로 온도 제어를 하고, 로의 양단을 중앙부보다 저온으로 함으로써, 온도 경사의 경우와 동일한 개선 효과를 얻을 수 있다. 또한, 본딩 와이어의 표면 산화를 억제하기 위하여, 로의 출구 측을 구리의 산화 속도가 느린 저온으로 함으로써, 웨지 접합부의 접합 강도의 상승을 얻을 수 있다. As a method of changing the temperature, it is also effective to divide the inside of the furnace into a plurality of regions and to make a temperature distribution by performing different temperature control in each region. For example, when the inside of a furnace is divided into three or more parts, temperature control is performed independently, and both ends of a furnace are lower than a center part, the improvement effect similar to the case of temperature gradient can be acquired. Moreover, in order to suppress the surface oxidation of a bonding wire, the junction strength of a wedge junction part can be raised by making the exit side of a furnace into low temperature with the slow oxidation rate of copper.
또한, 용융법은 외층 또는 심재 중 어느 하나를 용융시켜 주입(鑄入)하는 수법으로, 1 내지 50 ㎜ 정도의 굵은 지름으로 외층과 심재를 접속시킨 후에 신선함으로써 생산성이 우수한 것, 도금, 증착법에 비하여 외층의 합금 성분 설계가 용이하고, 강도, 접합성 등의 특성 개선도 용이한 등의 이점이 있다. 구체적인 공정으로는 미리 제작한 심재의 주위에, 용융한 금속 M을 주입하여 외층을 형성하는 방법과, 미리 제작한 금속 M의 중공 원주를 사용하여, 그 중앙부에 용융한 구리 또는 구리 합금을 주입하여 심재를 형성하는 방법으로 나눌 수 있다. 좋기로는, 후자의 중공 원주의 내부에 구리의 심재를 주입하는 것이 외층 중에 구리의 농도 구배 등을 용이하게 안정적으로 형성할 수 있다. 이때, 미리 제작한 외층 중에 구리를 소량 함유시키면, 외층 표면에서의 구리 농도의 제어가 용이하게 된다. 또한, 용융법으로는 외층에 구리를 확산시키기 위한 열처리 작업을 생략하는 것도 가능하지만, 외층 내의 구리의 분포를 조정하기 위하여 열처리를 함으로써 더욱 특성 개선도 꾀할 수 있다. In addition, the melting method is a method of melting and injecting any one of the outer layer or the core material, and having excellent productivity by connecting the outer layer and the core material to a coarse diameter of about 1 to 50 mm and then drawing them to a product having excellent productivity, plating and vapor deposition methods. On the other hand, there are advantages such as easy design of the alloy component of the outer layer and easy improvement of properties such as strength and bonding properties. As a specific process, the molten copper or copper alloy is injected into the center part by using the method of injecting molten metal M and forming an outer layer around the core material previously manufactured, and the hollow cylinder of the metal M produced previously. It can be divided into the method of forming the core material. Specifically, injecting a copper core material into the latter hollow cylinder can easily and stably form a concentration gradient of copper in the outer layer. At this time, when a small amount of copper is contained in the outer layer prepared beforehand, control of the copper concentration on the outer layer surface becomes easy. In addition, it is also possible to omit the heat treatment operation for diffusing copper into the outer layer by the melting method, but further improvement of characteristics can be achieved by heat treatment in order to adjust the distribution of copper in the outer layer.
또한, 이러한 용융 금속을 이용하는 경우, 심재와 외층의 적어도 어느 하나를 연속 주조로 제조하는 것도 가능하다. 이 연속 주조법에 의하여, 상기 주입하는 방법과 비교하여, 공정이 간략화되고, 또한 선 직경을 가늘게 하여 생산성을 향상시키는 것도 가능하게 된다. In addition, when using such a molten metal, it is also possible to manufacture at least one of a core material and an outer layer by continuous casting. By this continuous casting method, compared with the above-mentioned injection method, the process can be simplified and the line diameter can be made thin to improve productivity.
본 발명에 관한 외층과 심재를 가진 종래의 복층 구리 와이어의 본딩 방법으로서 볼을 형성할 때의 쉴딩 가스로 순 N2 가스를 사용하여도, 양호한 볼 접합성이 확인되었다. 즉, 구리를 주성분으로 하는 심재와, 이 심재 위에 설치된, 심재와 성분 및 조성의 어느 하나 또는 두 가지가 모두 다른 금속 M 및 구리를 함유하는 외층을 가지고, 상기 외층의 두께가 0.021 내지 0.12 ㎛인 본딩 와이어를 사용하며, 순도가 99.95 vol% 이상인 N2 가스를 와이어 선단 또는 그 주위에 분사하면서 아크 방전을 일으키게 하여 볼부를 형성하고, 이 볼부를 접합하는 본딩 방법이다. 이 본딩 방법으로는 표준 가스인 5 vol% H2+N2 가스 대신에, 염가의 순 N2 가스를 사용함으로써, 운용 비용을 저감하고, 구리계 본딩 와이어의 실용화를 촉진할 수 있다. As a bonding method of a conventional multilayer copper wire having an outer layer and a core according to the present invention, N as a shielding gas when forming balls.2 Even when gas was used, good ball bonding property was confirmed. That is, it has a core material containing copper as a main component, and the outer layer containing metal M and copper in which one or both of a core material, a component, and a composition are provided on this core material, and whose thickness is 0.021-0.12 micrometers. N with a purity of 99.95 vol% or more, using bonding wires2 It is a bonding method which forms a ball part by making an arc discharge generate | occur | producing the gas to the wire tip or its periphery, and joins this ball part. This bonding method uses 5 vol% H as a standard gas.2+ N2 Cheap net N instead of gas2 By using gas, operating cost can be reduced and the utilization of a copper type bonding wire can be promoted.
본 발명에 관한 복층강 본딩 와이어의 볼 형성에 사용하는 쉴딩 가스가 표준적인 5 vol% H2+N2 가스이어도 양호한 본딩 특성을 얻을 수 있으나, 또는 순 N2 가스에서도 동일한 양호한 특성을 얻을 수 있다. 외층의 두께가 0.021 ㎛ 이하로 얇은 경우에는 순 N2 가스에서는 편심 볼이 발생하는 것이 문제이다. 또한, 0.12 ㎛를 넘으면, 순 N2 가스에서는 볼 표면에 주름 모양의 돌기 또는 미소 구멍 등이 생겨서, 평활한 볼 표면을 얻는 것이 곤란해진다. 이와 같은 외층의 두께가 0.021 내지 0.12 ㎛이면 순 N2 가스에서의 볼 형성성이 양호한 것도, 이 두께를 선정한 하나의 이점이 된다. 상기 외층의 두께의 범위에서도 0.035 ㎛ 이상이면, 진구성을 한층 더 높일 수 있다. 순 N2 의 순도가 99.95 vol% 이상인 이유는 공업적으로 염가로 입수할 수 있는 N2 가스의 보증 농도의 범위이며, 양호한 볼 형성을 할 수 있기 때문이다. Shielding gas is a standard 5 used for formation of multi-layered steel ball bonding wire according to the present invention vol% H 2 + N 2 Good bonding properties can be achieved with gas, or pure N 2 The same good characteristics can be obtained in gas. If the thickness of the outer layer is less than 0.021 ㎛, net N 2 The problem is that eccentric balls are generated in gas. In addition, more than 0.12 ㎛, pure N 2 In the gas, wrinkled protrusions or micro holes are formed on the ball surface, which makes it difficult to obtain a smooth ball surface. If the thickness of such an outer layer is 0.021 to 0.12 μm, pure N 2 Good ball formability in gas is also one advantage of selecting this thickness. Even if it is 0.035 micrometer or more also in the range of the thickness of the said outer layer, a true structure can be improved further. The reason why the purity of pure N 2 is 99.95 vol% or more is that industrially available N 2 It is because it is the range of the guaranteed concentration of gas, and favorable ball formation can be performed.
통상, 5 vol% H2 가스를 혼입함으로써, 아크 방전의 안정화, 용융된 볼의 산화 억제에 효과가 있다고 여겨진다. 이에 대하여, 순 N2 가스 중에서는 본딩 와이어를 용융하여 볼을 형성할 때에, 단층 구리 와이어 또는 종래의 복층 구리 와이어에서도 외층이 얇은 경우에는 아크 방전이 불안정하거나 강의 산화가 우선적으로 진행함으로써, 볼 형상이 불안정하게 된다. 한편, 외층이 본 발명의 범위이면, 순 N2 가스 중이어도, 표면 근방의 금속 M이 아크 방전을 안정화시키는 것 및 외층이 우선적으로 용융하여 보호적인 역할을 함으로써, 볼의 산화를 억제할 수 있다고 생각된다. 접합 조건에 따라서는 순 N2 가스로 접합한 볼의 접합 강도가 5 vol% H2+N2 가스인 경우보다 높은 경우도 확인되었다. 5 vol% H 2 By mixing the gas, it is considered that it is effective in stabilizing the arc discharge and suppressing oxidation of the molten ball. On the other hand, in the pure N 2 gas, when the bonding wire is melted to form a ball, even in a single layer copper wire or a conventional double layer copper wire, when the outer layer is thin, arc discharge becomes unstable or oxidation of steel preferentially proceeds. This becomes unstable. On the other hand, if the outer layer is within the scope of the present invention, even in the pure N 2 gas, the oxidation of the ball can be suppressed by stabilizing the arc discharge by the metal M near the surface and the outer layer preferentially melting to play a protective role. I think. Net N 2 depending on bonding conditions The bond strength of the ball bonded with gas is 5 vol% H 2 + N 2 It was also confirmed that the case was higher than that of the gas.
또한, 순 N2 가스에서의 볼 형성은 상기 외층의 두께에 추가하여, 외층을 구성하는 금속 M의 종류에 따라서 변동하는 경향이 있다. 그 중에서도, 외층을 구성하는 금속 M이 Au, Pd, Pt 및 Rh로부터 선택되는 1종 이상을 주성분으로 하는 경우에는 순 N2 가스에서의 볼 형성에 있어서, 진구성의 향상, 볼 사이즈의 안정화가 비교적 용이한 것을 확인하였다. In addition, ball formation in pure N 2 gas tends to vary depending on the type of metal M constituting the outer layer in addition to the thickness of the outer layer. In particular, when the metal M constituting the outer layer has at least one selected from Au, Pd, Pt, and Rh as a main component, in the formation of balls in pure N 2 gas, the improvement of true structure and stabilization of ball size are achieved. It was confirmed that it was relatively easy.
[실시예][Example]
이하, 실시예에 대하여 설명한다. Hereinafter, examples will be described.
본딩 와이어의 원재료로 심재에 사용하는 구리는 순도가 약 99.99 질량% 이상의 고순도 소재를 사용하고, 외층의 Au, Pt, Pd, Rh 및 Ag의 소재에는 순도 99.9 질량% 이상의 원료를 준비하였다. Copper used for the core material as a raw material of the bonding wire is a high purity material of about 99.99% by mass or more, and a raw material of 99.9% by mass or more of pure material is prepared for the Au, Pt, Pd, Rh and Ag materials of the outer layer.
어느 선 직경까지 가늘게 한 구리계 본딩 와이어를 심재로 하고, 그 와이어 표면에 다른 금속 M의 층을 형성하려면, 전해 도금법, 무전해 도금법, 증착법, 용융법 등을 실시하고, 농도 구배를 형성하기 위해 열처리를 하였다. 최종의 선 직경으로 외층을 형성하는 경우와, 어느 정도의 선 직경으로 외층을 형성하고 나서 신선 가공에 의하여 최종 선 직경까지 더 가늘게 하는 방법을 사용하였다. 전해 도금액, 무전해 도금액은 반도체 용도로 시판되고 있는 도금액을 사용하고, 증착은 스패터법을 사용하였다. 직경이 약 30 내지 2500 ㎛의 본딩 와이어를 미리 준비하고, 그 와이어 표면에 증착, 도금 등에 의하여 피복하고, 최종 지름 15 내지 50 ㎛까지 신선하며, 마지막으로 가공 변형 제거 연신값이 5 내지 20%의 범위가 되도록 열처리를 하였다. 신선 속도는 5 내지 100 m/min의 범위에서 실시하였다. 필요에 따라서, 신선액에는 시판하는 구리 신선용 윤활제를 소량 가하였다. 필요에 따라서, 선 직경 30 내지 100 ㎛까지 다이스 신선한 후에 확산 열처리를 하고 나서 추가 신선 가공을 하였다. To form a copper-based bonding wire thinned to a certain wire diameter and form a layer of another metal M on the surface of the wire, electrolytic plating, electroless plating, evaporation, melting and the like are performed to form a concentration gradient. Heat treatment was performed. In the case of forming the outer layer at the final line diameter, and forming the outer layer at a certain line diameter, a method of further thinning to the final line diameter by drawing was used. As the electrolytic plating solution and the electroless plating solution, a plating solution commercially available for semiconductor use was used, and the deposition was performed by the spatter method. Bonding wires having a diameter of about 30 to 2500 µm are prepared in advance, and coated on the surface of the wire by vapor deposition, plating, or the like, and drawn to a final diameter of 15 to 50 µm. The heat treatment was carried out to the range. Drawing speed was implemented in the range of 5-100 m / min. As needed, a small amount of commercially available copper drawing lubricant was added to the drawing liquid. As needed, after freshly dice | dies to the wire diameter of 30-100 micrometers, it carried out the diffusion heat processing, and further wire processing was performed.
용융법을 이용하는 경우에는 미리 제작한 심재의 주위에 용융한 금속을 주입하는 방법과, 미리 제작한 중공 원주의 중앙부에 용융한 구리 또는 구리 합금을 주입하는 방법을 채용하였다. 그 후, 단조, 롤 압연, 다이스 신선 등의 가공과 열처리를 하여, 본딩 와이어를 제조하였다. In the case of using the melting method, a method of injecting a molten metal around a core material prepared in advance, and a method of injecting molten copper or a copper alloy in the center portion of a hollow cylinder manufactured in advance. Then, the bonding wire was processed and heat-processed, such as forging, roll rolling, and die drawing, and the bonding wire was manufactured.
본 발명 예의 와이어의 열처리에 있어서는, 와이어를 연속적으로 왕복운동하면서 가열하였다. 국소적으로 온도 경사를 도입하는 방식, 온도를 로 내에서 변화시키는 방식 등을 이용하였다. 예를 들면, 로 내 온도를 3 분할하여 제어할 수 있도록 개조한 열처리 로를 이용하였다. 로 내 온도는 200 내지 700℃의 범위로 설정하고, 와이어 왕복운동 속도는 10 내지 500 ㎜/min의 범위로 조정하였다. 온도 분포의 일례로는 와이어의 삽입구로부터 출구를 향하여, 고온→중온→저온, 또는 중온→고온→저온의 분포를 얻고, 각각의 가열 길이도 관리하였다. 온도 분포와 함께, 와이어 왕복운동 속도 등도 적정화하였다. 열처리 분위기에서는 산화를 억제할 목적으로 N2, Ar 등의 비활성 가스도 사용하였다. 가스 유량은 0.0002 내지 0.004 ㎥/min의 범위에서 조정하고, 로 내의 온도 제어에도 이용하였다. 열처리를 하는 타이밍으로서 신선 후의 구리 와이어에 열처리를 하고 나서 도금층을 형성하는 경우와, 열처리를 신선 후와 도금층의 형성 후의 2회 실시하는 경우의 2 종류로 시료를 준비하였다. In the heat treatment of the wire of the example of the present invention, the wire was heated while reciprocating continuously. A method of introducing a temperature gradient locally, a method of changing the temperature in a furnace, and the like were used. For example, a heat-treatment furnace that was modified to control the temperature in the furnace by three divisions was used. The furnace temperature was set to the range of 200-700 degreeC, and the wire reciprocation speed was adjusted to the range of 10-500 mm / min. As an example of temperature distribution, the distribution of high temperature → medium temperature → low temperature, or medium temperature → high temperature → low temperature was obtained from the insertion opening of the wire toward the outlet, and the respective heating lengths were also managed. Along with the temperature distribution, the wire reciprocating speed and the like were also optimized. In the heat treatment atmosphere, inert gases such as N 2 and Ar were also used for the purpose of suppressing oxidation. The gas flow rate was adjusted in the range of 0.0002 to 0.004 m 3 / min, and used for temperature control in the furnace. As the timing for the heat treatment, the samples were prepared in two types, in which a plating layer was formed after the heat treatment was performed on the copper wire after drawing and in the case of performing the heat treatment twice after drawing and after the formation of the plating layer.
외층 표면의 산소 농화 영역을 제어하는 경우에는 열처리 공정에 있어서 가열 조건(로 내 온도 분포, 왕복운동 속도)이나, 냉각 조건(가스 종류, 유량, 쉴드성) 등을 적정화하였다. 예를 들면, 로 내 및 입출구 근방에서의 분위기를 제어하기 위하여, 가스 유입구는 2개소 이상으로 하여 각 주입구의 위치, 유입 방향이나, 가스 유량 등을 조정함으로써, 로 내의 산소 분압이나, 온도 분포 등을 조정하였다. 가스 유량은 0.0002 내지 0.004 ㎥/min의 범위에서 조정하였다. 또한, 로의 출구 근방의 여열 영역에서 와이어가 가열되어 산화되는 경우가 있기 때문에, 가열 영역 후의 냉각 존에서의 분위기 제어에도 유의하였다. In the case of controlling the oxygen concentration region on the outer layer surface, the heating conditions (temperature distribution in the furnace, the reciprocation speed), the cooling conditions (gas type, flow rate, shieldability), and the like were optimized in the heat treatment step. For example, in order to control the atmosphere in the furnace and in the vicinity of the inlet and outlet, the gas inlet should be two or more places, and by adjusting the position, inflow direction, gas flow rate, etc. of each inlet, oxygen partial pressure in the furnace, temperature distribution, etc. Was adjusted. The gas flow rate was adjusted in the range of 0.0002 to 0.004 m 3 / min. In addition, since the wire may be heated and oxidized in the thermal region near the outlet of the furnace, attention was also paid to the atmosphere control in the cooling zone after the heating region.
외층 표면의 탄소 농화 영역을 제어하는 경우에는 상기 열처리 후에 방청제, 계면 활성제 등을 소량 함유하는 용액 중에 침지시키는 도포, 세정, 건조를 연속적으로 실시하였다. 여기에서의 도포액에는 방청제, 계면활성제를 총계하여 1 내지 20 vol%의 농도 범위에서 증류수 중에 수 종류를 혼합한 용액을 사용하였다. 세정은 증류수를 기본으로 하고, 필요에 따라 알코올을 일부 첨가한 것을 사용하였다. 과잉으로 부착한 도포제를 제거하는 효과를 높일 필요가 있는 경우에는 도포액을 30 내지 50℃의 온도 범위로 가열하였다. 건조에서는 건조 공기 또는 N2 가스를 와이어에 분사하였다. 또한, 필요에 따라서, 선 직경 30 내지 100 ㎛까지 신선한 후에, 상기 열처리 및 도포 공정을 실시하고 나서, 추가로 신선 가공을 하고, 최종 선 직경으로 재차 열처리 및 도포 공정을 실시하였다. 이 두 번의 열처리에 의한 효과의 하나로서, 최표면의 탄소 농도는 낮게 억제하면서, 깊이 방향의 탄소 농도의 분포를 제어하는 데 유효하다. In the case of controlling the carbon-concentrated region on the outer layer surface, coating, washing, and drying were carried out continuously by immersion in a solution containing a small amount of a rust inhibitor, a surfactant, and the like after the heat treatment. The coating liquid here used the solution which mixed several kinds in distilled water in the concentration range of 1-20 vol% in total with the rust inhibitor and surfactant. The washing was based on distilled water, and some alcohol was added as necessary. When it is necessary to improve the effect of removing the coating agent adhered excessively, the coating liquid was heated to the temperature range of 30-50 degreeC. In drying, dry air or N 2 gas was injected into the wire. In addition, as needed, after fresh to the wire diameter of 30-100 micrometers, after performing the said heat processing and application | coating process, it wired further and carried out heat processing and application | coating process again to the final wire diameter. As one of the effects of these two heat treatments, it is effective to control the distribution of the carbon concentration in the depth direction while keeping the carbon concentration at the outermost surface low.
와이어 표면의 막 두께 측정에는 AES에 의한 깊이 분석을 이용하고, 결정립계의 농화 등 원소 분포의 관찰에는 AES, EPMA 등에 의한 면 분석, 선 분석을 하였다. AES에 의한 깊이 분석에서는 Ar 이온으로 스패팅하면서 깊이 방향으로 측정하고, 깊이의 단위에는 SiO2 환산으로 표시하였다. 본딩 와이어 중의 금속 M의 농도는 ICP 분석, ICP 질량 분석 등에 의하여 측정하였다. Depth analysis by AES was used for the measurement of the film thickness of the wire surface, and surface analysis and line analysis by AES, EPMA, etc. were performed for observation of element distribution, such as the concentration of a grain boundary. In-depth analysis by AES measurements in the depth direction while's padding with Ar ions, and, in the unit of the depth indicated in terms of SiO 2. The concentration of metal M in the bonding wire was measured by ICP analysis, ICP mass spectrometry, and the like.
본딩 와이어의 접속에는 시판하는 자동 와이어 본더를 사용하여, 볼/웨지 접합을 하였다. 아크 방전에 의하여 와이어 선단에 볼을 제작하고, 그것을 실리콘 기판 위의 전극 막에 접합하여, 와이어 타단을 리드 단자 위에 웨지 접합하였다. 볼 형성 시의 산화를 억제하기 위하여 사용하는 쉴딩 가스는 표준적인 5 vol% H2+N2 가스와 순 N2 가스를 사용하였다. 볼 형상의 평가 이외에는, 기본적으로는 표준 가스인 5 vol% H2+N2 가스를 이용하였다. 가스 유량은 0.0003 내지 0.005 ㎥/min의 범위에서 조정하였다. Ball / wedge joining was performed for the connection of the bonding wire using the commercially available automatic wire bonder. A ball was produced at the tip of the wire by arc discharge, and it was joined to the electrode film on the silicon substrate, and the other end of the wire was wedge bonded onto the lead terminal. Shielding gas used to inhibit oxidation during ball formation is standard 5 vol% H 2 + N 2 Gas and Net N 2 Gas was used. Other than the evaluation of the ball shape, 5 vol% H 2 + N 2 which is basically a standard gas Gas was used. The gas flow rate was adjusted in the range of 0.0003 to 0.005 m 3 / min.
접합 상대로서는, 실리콘 기판 위의 전극 막의 재료인, 두께 1 ㎛의 Al 합금 막 (Al-1 질량% Si-0.5 질량% Cu 막, Al-0.5 질량% Cu 막)을 사용하였다. 한편, 웨지 접합의 상대에게는 표면에 Ag 도금(두께: 1 내지 4 ㎛)한 리드 프레임, 또는 Au 도금/Ni 도금/Cu의 전극 구조의 수지 기판을 사용하였다. As the bonding partner, an Al alloy film (Al-1 mass% Si-0.5 mass% Cu film, Al-0.5 mass% Cu film) having a thickness of 1 µm, which is a material of the electrode film on the silicon substrate, was used. On the other hand, a lead frame of Ag plating (thickness: 1 to 4 µm) on the surface or a resin substrate having an electrode structure of Au plating / Ni plating / Cu was used as a counterpart of the wedge joint.
볼 형성성에 대하여, 산화를 억제하기 위하여 사용하는 쉴딩 가스가 표준적인 5 vol% H2-N2 가스(순도 5N up, 고압 봄베 공급)인 경우와, 순 N2 가스(순도 4N, 집중 배관 공급)인 경우를 비교하였다. 초기 볼 형상의 평가에서는 볼 지름/와이어 지름의 비율이 1.7 내지 2.0인 범위로 하였다. 접합 전의 볼 30개를 주사형 전자 현미경(SEM) 또는 광학 현미경으로 관찰하여, 표면 성상, 형상, 치수 정밀도 등을 평가하였다. 이상 형상의 볼 발생이 3개 이상이면 불량이고, 개선이 필요하기 때문에 ×표, 이상 형상이 2개 이하이지만, 표면의 요철이 크거나, 본딩 와이어에 대한 볼 위치의 심 어긋남이 현저한 개수가 5개 이상인 경우에는 △표, 심 어긋남이 2 내지 4개이며 그 정도도 작으면 실용상의 큰 문제는 없다고 판단하여 ○표, 심 어긋남이 1개 미만이고, 또한 치수 정밀도도 양호한 경우에는 볼 형성은 양호하기 때문에 ◎표로, 표 2중의 「볼 형성성」의 란에 표기하였다. For ball formation, the shielding gas used to inhibit oxidation is standard 5 vol% H 2 -N 2 Gas (purity 5N up, high pressure cylinder supply) and net N 2 The case of gas (purity 4N, concentrated piping supply) was compared. In the evaluation of the initial ball shape, the ratio of the ball diameter / wire diameter was set in the range of 1.7 to 2.0. Thirty balls before bonding were observed with a scanning electron microscope (SEM) or an optical microscope to evaluate surface properties, shape, dimensional accuracy and the like. If there are three or more abnormally shaped balls, it is defective and needs improvement, but the X mark and the abnormal shape are two or less, but the number of irregularities on the surface is large, or the number of significant seam shifts of the ball position relative to the bonding wire is five. In the case of more than 2, it is judged that there is no problem in practical use if the △ mark and the seam misalignment are 2 to 4, and the degree is too small. ○ If the table and the seam misalignment are less than 1 and the dimensional accuracy is also good, the ball formation is good. Therefore, it was written in the column of "ball formation property" of Table 2 in (de) table.
압착 볼부의 접합 형상의 판정에서는, 접합된 볼을 500개 관찰하여, 형상의 진원성, 치수 정밀도 등을 평가하였다. 초기 볼 지름/와이어 지름의 비율이 1.9 내지 2.2인 통상의 사이즈의 볼을 형성하는 경우와, 비율이 1.5 내지 1.7의 범위인 소경 볼을 형성하는 경우의 2 종류로 각각 평가하였다. 진원으로부터 벗어난 이방성이나 화변 모양 등의 불량 볼 형상이 5개 이상이면 불량으로 판정하여 ×표, 불량 볼 형상이 2 내지 4개이면, 필요에 따라서 개선이 바람직하기 때문에 △표, 불량 볼 형상이 1개 이하이면 양호하기 때문에 ○표로, 표 2중의 「볼 접합 형상」의 란에 표기하였다. In determination of the joining shape of a crimping ball part, 500 bonded balls were observed and the roundness of a shape, dimensional precision, etc. were evaluated. The evaluation was carried out in two types, respectively, in the case of forming a ball of a normal size having a ratio of the initial ball diameter / wire diameter of 1.9 to 2.2, and in the case of forming a small diameter ball having a ratio of 1.5 to 1.7. If there are five or more defective ball shapes, such as anisotropy or fireballs, which are out of the circle, the defect is judged to be defective. If the X or defective ball shapes are 2 to 4, improvement is preferable if necessary. Since it is satisfactory if it is less than a dog, it is described in the column of "ball joint shape" of Table 2 in the (circle) table.
초기 볼의 오목부 및 압착 볼부의 미소 요철의 평가에 대하여, 20개의 초기 볼의 선두부의 SEM 관찰과 접합된 볼부를 300개 관찰에 의하여, 종합적으로 판정하였다. 오목부가 8개 이상이거나, 미소 요철이 발생한 볼 접합부가 30개 이상의 어느 하나이어도 불량으로 판정하여 ×표, 오목부가 2 내지 7개이거나, 미소 요철이 발생한 볼 접합부가 4 내지 29개의 범위이면, 필요에 따라서 개선이 바람직하기 때문에 △표, 오목부는 인정되지 않고, 미소 요철이 발생한 볼 접합부가 3개 이하이면 양호하기 때문에 ○표로, 표 2 중의 「오목부, 표면 요철」란에 표기하였다. About evaluation of the micro unevenness | corrugation of the recessed part of a initial ball, and a crimped ball part, 300 ball parts joined with SEM observation of the head part of 20 initial balls were comprehensively determined by observation. It is necessary if 8 or more recesses or the ball joint part which micro unevenness | corrugation generate | occur | produced is bad, and it is judged to be bad, and a X mark and 2-7 concave parts, or the ball joint part which micro unevenness | corrugation generate | occur | produced is a range of 4-29. In order to improve according to this, the? Table and the concave portion are not recognized, and since it is satisfactory if three or less ball joints where micro irregularities have occurred are indicated in the? Table, they are indicated in the "concave portion, surface irregularities" column in Table 2.
볼 접합부의 Al 스플래쉬의 평가에서는, 볼 접합부를 SEM 관찰하고 초음파 인가 방향으로 Al의 스플래쉬 정도를 평가하는 직접 관찰과, 쉐어 시험에 의하여 볼부를 제거하고, 그 쉐어 파단면에 잔존하는 Al 전극의 변형, 잔량 등으로부터 Al 전극의 스플래쉬를 판정하는 간접 관찰에 대하여, 양 방법으로 확인하였다. Al 스플래쉬가 거의 없고, 금 본딩 와이어의 경우와 동등하고 양호한 경우에는 ◎표, 스플래쉬는 있지만 변형량은 적은 경우에는 ○표, 스플래쉬가 증가하고 있지만 거의 문제가 되지 않는 경우에는 △표, 스플래쉬가 현저이기 때문에 개선이 필요한 경우에는×표로, 표 2중의 「Al막의 스플래쉬」란에 표기하였다. In the evaluation of the Al splash of the ball joint, direct observation of SEM observation of the ball joint and evaluation of the splash degree of Al in the ultrasonic application direction, and the removal of the ball by the shear test, and deformation of the Al electrode remaining on the shear fracture surface The indirect observation for determining the splash of the Al electrode from the residual amount or the like was confirmed by both methods. When there is almost no Al splash and is equivalent to the case of gold bonding wire and is good, ◎ mark and splash, but there is little deformation, ○ mark and splash are increasing, but △ mark and splash are not significant. Therefore, when improvement is needed, it is indicated by "x" in the "splash of Al film" column of Table 2.
본딩 공정에서의 루프 형상 안정성에 대하여, 와이어 길이가 2 ㎜인 범용 스팬과 0.5 ㎜의 단 스팬의 2 종류로, 사다리꼴 루프를 제작하고, 각각 500개의 본딩 와이어를 투영기에 의하여 관찰하여, 본딩 와이어의 직선성, 루프 높이의 편차 등을 판정하였다. 와이어 길이가 짧은 0.5 ㎜이고, 사다리꼴 루프의 형성은 칩 단부에의 접촉을 회피하기 위하여, 더 엄격한 루프 제어가 필요하다. 와이어 길이 2 ㎜, 직선성, 루프 높이 등의 불량이 5개 이상 있는 경우에는 문제가 있다고 판단하여 ×표로 나타내고, 와이어 길이 0.5 ㎜, 불량이 2 내지 4개이고, 또한, 와이어 길이 0.5 ㎜, 불량이 5개 이상인 경우에는 개선이 필요하다고 판단하여 △표로 나타내고, 와이어 길이 2 ㎜, 불량이 1개 이하이고, 와이어 길이 2 ㎜, 불량이 2 내지 4개인 경우에는 루프 형상은 비교적 양호하기 때문에 ○표로 나타내며, 와이어 길이 0.5 ㎜, 불량이 1개 이하인 경우에는 루프 형상은 안정적이라고 판단하여 ◎표로, 표 2중의 「루프 안정성」 란에 나타내었다. 불량 원인의 하나로 심재와 외주부의 계면의 밀착성이 충분하지 않은 것, 단면에서의 특성 불균형 등이 상정된다. Regarding the loop shape stability in the bonding process, trapezoidal loops were produced by two types of general spans having a wire length of 2 mm and short spans of 0.5 mm, and 500 bonding wires were observed with a projector, respectively. Linearity, variation in loop height, and the like were determined. The wire length is 0.5 mm short, and the formation of trapezoidal loops requires more stringent loop control to avoid contact with the chip ends. When five or more defects, such as a wire length of 2 mm, a linearity, and a loop height, are judged to be a problem, they are represented by the X mark, and the wire length is 0.5 mm and the defect is 2 to 4, and the wire length is 0.5 mm and the defect is In the case of 5 or more, it is determined that improvement is necessary, and is represented by the △ table, and when the wire length is 2 mm and the defect is 1 or less, and the wire length is 2 mm and the defect is 2 to 4, the loop shape is relatively good. In the case where the wire length was 0.5 mm and the defect was one or less, the loop shape was judged to be stable, and the loop shape was shown in the "loop stability" column of Table 2 in the table. One of the causes of the failure is that the adhesion between the interface between the core and the outer circumferential portion is not sufficient, the characteristic imbalance at the cross section, etc. is assumed.
와이어 표면의 스크래치, 깎임 등의 평가에서는, 본딩된 루프의 외관 관찰에 의하여 조사하였다. 선 직경은 25 ㎛, 와이어 길이는 2 ㎜, 루프 높이의 목적 값은 200 ㎛ 정도가 되는 사다리꼴 루프를 형성하고, 1000 개의 와이어를 투영기에 의하여 관찰하였다. 스크래치 관찰은 루프의 상측을 중심으로, 깎임 관찰은 루프 전체에 사이즈가 30 ㎛ 이상인 깎임을 평가하였다. 깎임이 4개 이상이고 스크래치도 현저한 경우에는 문제가 있다고 판단하여 ×표로 나타내고, 깎임이 1 내지 3개의 범위이지만, 스크래치 발생이 많고, 캐필러리 막힘 등에 대한 영향이 염려되는 경우에는 개선이 필요하다고 판단하여 △표로 나타내고, 깎임이 1 내지 3개의 범위이고, 문제시되는 큰 스크래치 발생이 없는 경우에는 와이어 표면은 비교적 양호하기 때문에 ○표로 나타내며, 깎임이 발생하고 있지 않고, 스크래치도 눈에 띄지 않는 경우에는 안정적으로 양호하다고 판단하여 ◎표로, 표 3 중의 「루프의 스크래치, 깎임」의 란에 표기하였다. 스크래치, 깎임의 판정에는 관찰자의 개인적 판단에 따라 다소 영향을 받는 것이 염려되기 때문에, 2명 이상의 관찰자가 평가하고, 평균 정보로 순위를 매겼다. In evaluation of scratches, chippings, etc. of the wire surface, it investigated by observing the external appearance of the bonded loop. A trapezoidal loop having a wire diameter of 25 μm, a wire length of 2 mm, and a loop height of about 200 μm was formed, and 1000 wires were observed by a projector. The scratch observation centered on the upper side of the loop, and the clipping observation evaluated the cutting of a size of 30 μm or more throughout the loop. If more than 4 cuts and scratches are remarkable, it is determined that there is a problem, and it is indicated by the X mark, and the cuts are in the range of 1 to 3, but if there is a lot of scratches and an influence on the clogging of the capillary, improvement is necessary. Judgment is indicated by the △ table, and the cut is in the range of 1 to 3, and when there is no large scratch occurrence in question, the surface of the wire is represented by a ○ mark because the wire surface is relatively good, and when the shaping is not occurring and the scratch is also not noticeable It judged that it was stably favorable, and it was described in the column of "scratch of a loop, shaving" of Table 3 in the (double-circle) table. Since the judgment of scratches and scrapes may be somewhat affected by the observer's personal judgment, two or more observers evaluated and ranked the average information.
반도체 소자 위에 본딩된 와이어의 표면 산화의 평가에 대하여, QFP 상에 와이어를 208개 접속한 시료를 2개 제작하고, 주로 루프의 상방으로부터의 광 현미경 관찰에 의한 와이어 표면의 색 변화로부터 산화 상황을 평가하였다. 본딩 조건에서는 스테이지 온도는 200℃, 가열 스테이지 상에 노출되는 시간을 약 2분으로 통일하였다. 와이어 표면에 산화가 인정되는 와이어가 20개 이상인 경우에는 ×표, 6 내지 19개인 경우에는 엄격한 요구에 대하여는 개선이 필요하다고 판단하여 △표, 2 내지 5개인 경우에는 실용상은 문제가 없는 레벨의 산화라고 판단하여 ○표, 1개 이하인 경우에는 양호하므로 ◎표로, 표 2 중의 「접합 후에 가열된 와이어 표면의 산화」의 란에 표기하였다. Regarding the evaluation of the surface oxidation of the wire bonded on the semiconductor element, two samples in which 208 wires were connected on the QFP were prepared, and the oxidation situation was mainly determined from the color change of the wire surface by light microscopic observation from above the loop. Evaluated. Under bonding conditions, the stage temperature was unified to 200 ° C. and the time exposed on the heating stage to about 2 minutes. When there are 20 or more wires which are recognized for oxidation on the surface of the wire, it is judged that improvement is required for the strict requirements in case of X or 6 to 19, and in case of △ table or 2 to 5, there is no problem in practical use. If it is judged to be a ○ mark or one or less, it is good, and according to the ◎ mark, it is indicated in the column of "oxidation of the wire surface heated after joining" in Table 2.
풀림성의 평가로는 선 직경 20 ㎛, 스팬 1 내지 3 ㎜, 루프 높이 150 내지 300 ㎛로 본딩을 5000개 실시하고, 컬이나 절곡 등의 불량이 발생하여 직선성이 저하된 것을 카운트하였다. 직선성이 저하된 불량 수가 20개 이상인 경우에는 ×표, 10 내지 19개인 경우는 엄격한 요구에 대하여는 개선이 필요하다고 판단하여 △표, 3 내지 9개이며, 그 정도도 비교적 작은 경우에는 실용상은 문제가 없는 레벨의 산화라고 판단하여 ○표, 2개 이하인 경우에는 양호하기 때문에 ◎표로, 표 3중의 「풀림성」의 란에 표기하였다. As evaluation of annealing property, 5000 bonding was performed by the wire diameter of 20 micrometers, span 1-3 mm, and loop height 150-300 micrometers, and defects, such as curl and bending, generate | occur | produced and counted that linearity fell. In the case of 20 or more defects with reduced linearity, the X and 10 to 19 cases were judged to need improvement for strict demands, and the △ table and 3 to 9 cases were considered. Since it is judged that it is oxidation of the level with no and (○) table | surface and two or less, since it is favorable, it was described in the column of "unwinding property" in Table 3 with the (◎) table.
와이어 보관 수명의 평가에서는 상온에서 대기 중에 방치한 본딩 와이어를 접속시키고, 웨지 접합의 접착 불량(non-stick failure)의 회수로 평가하였다. 본딩 와이어는 스풀 케이스에 넣은 상태로 클린룸 내에 보관하였다. 방치 기간은 30일, 60일로 나누어 비교하였다. 접합 조건에서는 양산 공정에서 사용되는 통상 접합 조건과 초음파 출력을 약간 줄이고 불착을 유발하는 저접합 조건의 2종으로 비교하였다. 저온이 될수록 접합이 곤란하게 되므로, 스테이지 온도를 180℃의 저온으로 하고, 1000개의 본딩에 의하여 불착 발생 빈도를 평가하였다. 통상 접합 조건에서 접합되지 않은 것이 3개 이상 발생한 경우에는 개선이 필요하기 때문에 ×표, 통상 접합 조건에서 접합되지 않은 것이 2개 이하, 그리고 저접합 조건에서 접합되지 않은 것이 5개 이하의 경우에는 △표, 통상 접합 조건에서의 불착은 없고, 저접합 조건으로의 접합되지 않은 것이 2 내지 4개인 경우에는 거의 양호하기 때문에 ○표, 통상 접합 조건에서의 불착은 없고, 저접합 조건으로의 접합되지 않은 것이 1개 이하인 경우에는 와이어 보관 수명이 양호하다라고 판단하여 ◎표로, 표 2중의 「웨지 접합성」의 란에 표시하였다. In the evaluation of the wire storage life, the bonding wires left in the air at room temperature were connected and evaluated by the number of non-stick failures of the wedge joints. The bonding wires were stored in a clean room in the spool case. The neglect period was divided into 30 days and 60 days. The bonding conditions were compared to the normal bonding conditions used in the mass production process and the low bonding conditions that slightly reduce the ultrasonic power and cause non-bonding. Since the lower the temperature, the more difficult the bonding was, and the stage temperature was set at a low temperature of 180 ° C., and the occurrence frequency of non-sticking was evaluated by 1000 bonding. In the case where three or more non-bonded bonds are generated under normal bonding conditions, improvement is necessary. In the case of x or less, two or less non-bonded bonds are usually bonded at low bonding conditions, and 5 or less unbonded at low bonding conditions. Since there is no non-bonding under the table and the normal bonding conditions, and 2 to 4 that are not bonded under the low bonding conditions are almost satisfactory, ○ Table, there is no non-bonding under the bonding conditions and the non-bonding under the low bonding conditions In the case of one or less, it was judged that the wire storage life was good, and it was shown by the ◎ table in the column of "wedge bonding property" of Table 2.
TCT 시험에서는 시판되는 TCT 시험 장치를 사용하였다. 온도 이력은 가혹한 환경으로 한 표준 조건(-55℃/30분 내지 125℃/30분)과, 극히 가혹한 조건(-55℃/30분 내지 155℃/30분)의 2종을 이용하였다. 시험 후에 전기적 측정을 하여, 전기적 도통을 평가하였다. 와이어 400개를 측정하였다. 불량률이 제로인 경우에는 신뢰성이 높기 때문에 ◎표로, 1% 이하이면 실용상의 큰 문제는 없다고 판단하여 ○표, 2 내지 5의 범위이면 △표, 5% 초과이면 개선이 필요하므로 ×표로, 표 2 중의「TCT 시험」의 란에 표기하였다. In the TCT test, a commercial TCT test apparatus was used. The temperature history used two kinds of standard conditions (-55 ° C / 30 minutes to 125 ° C / 30 minutes) under severe environments and extremely harsh conditions (-55 ° C / 30 minutes to 155 ° C / 30 minutes). Electrical measurements were made after the test to evaluate electrical conduction. 400 wires were measured. If the defective rate is zero, the reliability is high, so it is judged that there is no practical problem in the table ◎, 1% or less, and ○, in the range of 2 to 5, △ table, improvement is necessary if it exceeds 5%. It was written in the column of "TCT test."
웨지 접합의 필 시험에서는 웨지 접합부의 와이어 삽입 각을 유지하면서 본딩 와이어를 끌어올리는 측정을 하였다. 이는 TCT 시험의 가속 평가로서 이용하였다. 이 시험에서의 파단 연신이 높은 본딩 와이어일수록, 접합부에서의 스트레스에 대하여 양호한 성능을 가진 것을 확인하였다. 웨지 접합의 필 시험에서의 파단 연신이 3% 이상이면 상당히 양호하므로 ◎표로, 1.5% 이상 3% 미만이면 충분하다고 판단하여 ○표, 1% 이상 5 미만이면 △표, 1% 미만이면 연신이 불충분하다고 판단하여 ×표이고, 표 2 중의「웨지 접합 필 시험」의 란에 표기하였다. In the peel test of a wedge joint, the measurement which pulls up a bonding wire, maintaining the wire insertion angle of the wedge joint was measured. This was used as an accelerated assessment of the TCT test. It was confirmed that the bonding wire with the higher breaking elongation in this test had better performance against stress at the joint. If the elongation at break in the peel test of the wedge joint is 3% or more, it is considerably good. Therefore, in the ◎ table, it is determined that 1.5% or more and less than 3% is sufficient. It judged that it was X, and it described in the column of the "wedge bonding peel test" of Table 2.
리플로우 내성의 평가에서는 와이어 본딩과 수지 밀봉을 한 반도체 시료를, 리플로우 로를 사용하여, 260℃에서 10초 동안 유지하고, 그 후에 상온까지 냉각하는 열 이력을 10회 실시하였다. 시료는 와이어 본딩의 조건이 통상의 온도인 200℃에서 접속한 경우와 엄격한 조건인 160℃의 저온에서 접속한 경우인 2 종류의 시료로 각각 평가하였다. 리플로우 시험 후에 전기적 측정을 하여 전기적 도통을 평가하였다. 와이어 400개를 측정하였다. 불량률이 제로인 경우에는 신뢰성이 높기 때문에 ◎표로, 1% 이하이면 실용상 큰 문제가 없다고 판단하여 ○표, 2 내지 5%의 범위이면 △표, 5% 초과이면 개선이 필요하다고 판단하여 ×표로, 표 2 중의「리플로우 내성」의 란에 표기하였다. In the evaluation of the reflow resistance, a semiconductor sample subjected to wire bonding and resin sealing was held for 10 seconds at 260 ° C for 10 seconds using a reflow furnace, and then a heat history of cooling to room temperature was performed 10 times. The sample was evaluated by two types of samples, respectively, when the wire bonding conditions were connected at 200 degreeC which is normal temperature, and when connected at the low temperature of 160 degreeC which is a strict condition. After the reflow test, electrical measurements were made to evaluate electrical conduction. 400 wires were measured. If the defective rate is zero, the reliability is high, so it is determined by the ◎ table that there is no major problem in practical use if it is 1% or less, the ○ table, the △ table if the range is 2 to 5%, and the X table, if it is more than 5%. It indicated in the column of "Reflow tolerance" of Table 2.
캐필러리 수명의 평가에서는 본딩 와이어를 5만 개 접속한 후, 캐필러리 선단의 오염, 마모 등의 변화로 판정하였다. 표면이 청정하면 ○표, 불착물 등이 적은 경우에는 통상의 조업에는 문제가 없기 때문에 △표, 불착물의 양이나 크기가 현저한 경우에는×표로, 표 2중의 「캐필러리 수명」의 란에 표기하였다. In evaluation of capillary life, after connecting 50,000 bonding wires, it determined by the change of the contamination of a capillary tip, abrasion, etc. If the surface is clean, ○ There are no problems in normal operation when there are few marks, non-adhesives, etc., in the △ table, when the quantity and size of the non-contaminants are remarkable, in the X table, in the column of `` Capillary Life '' in Table 2. Notation is shown.
표 1 내지 3에는 본 발명의 구리 본딩 와이어의 평가 결과와 비교예를 나타낸다. 표 1, 2의 실시예 1 내지 33, 비교예 C1 내지 C9에서는 와이어의 외층 표면에 있어서의 탄소, 산소를 농화시키는 처리를 하지 않았고, 표 1의 금속 M, 구리 등의 농도는 금속계 원소의 총계를 100 mol%로서 농도 표시하였다. 표 3의 실시예 B1 내지 B33에서는 표 1과 시료 번호(SAl 내지 SA33)가 동일한 와이어를 사용하여, 탄소, 산소를 농화시키는 처리를 한 경우이다. In Tables 1-3, the evaluation result and the comparative example of the copper bonding wire of this invention are shown. In Examples 1 to 33 of Tables 1 and 2 and Comparative Examples C1 to C9, the treatment of enriching carbon and oxygen on the outer layer surface of the wire was not performed, and the concentrations of the metals M and copper in Table 1 were the total amounts of the metallic elements. The concentration is expressed as 100 mol%. In Examples B1 to B33 of Table 3, the case where the process of concentrating carbon and oxygen using the same wire as Table 1 and the sample numbers (SAl to SA33) is performed.
표 3의 탄소, 산소의 농도 계산은 구리, 금속 M 등의 금속계 원소, 탄소, 산소 및 질소의 비금속계 원소의 총계를 100 mol%로서 농도를 산출한다. 표 1과 표 3에서 시료 번호가 같은 시료에서는 금속 M 및 구리 원소 등의 금속계 원소의 농도 비율은 기본적으로는 동일한 분석 값인 것을 확인하였다. 금속 원소의 농도 비율에 지배되는 표 1에 나타낸 성능에 대하여, 표 3에서 시료 번호가 동일한 시료에서도 거의 동일한 평가 결과를 얻을 수 있는 것을 확인하였다. 실시예 B1 내지 B33에 대하여도, 대표적인 특성인 TCT 시험, 필 시험, 리플로우 내성, 대기 방치 후의 웨지 접합성의 평가 결과에 대하여 표 3에 나타내고 있다. 또한, 볼 형성성, 볼 접합 형상, Al막의 스플래쉬 거동, 캐필러리 막힘 등의 성능에 대하여도, 실시예 B1 내지 B33에서도 표 1과 동일한 결과를 얻을 수 있는 것을 확인하였다. The concentration calculation of carbon and oxygen in Table 3 calculates the concentration as 100 mol% of the total amount of metal-based elements such as copper and metal M, and nonmetal-based elements such as carbon, oxygen and nitrogen. In the sample with the same sample number in Table 1 and Table 3, it was confirmed that the concentration ratio of metal-based elements such as metal M and copper element was basically the same analytical value. With respect to the performance shown in Table 1 governed by the concentration ratio of the metal element, it was confirmed in Table 3 that the same evaluation results can be obtained even in the samples having the same sample number. Also in Examples B1 to B33, Table 3 shows the evaluation results of the TCT test, the peel test, the reflow resistance, and the wedge bonding properties after the air standing, which are typical characteristics. Moreover, also in Examples B1 to B33, it was confirmed that the same result as Table 1 was obtained also about the performances, such as a ball formability, a ball joint shape, the splash behavior of an Al film, and capillary clogging.
청구항 1에 관한 본딩 와이어는 실시예 1 내지 33, B1 내지 B33이며, 청구항 2에 관한 본딩 와이어는 실시예 1 내지 32, B1 내지 B32, 청구항 3에 관한 본딩 와이어는 실시예 2, 4, 7, 8, 10, 14, 18, 24, 27, 29, 32, B2, B4, B7, B8, B10, B14, B18, B24, B27, B29, B32, 청구항 4에 관한 본딩 와이어는 실시예 3, 18 내지 20, 24, 31, B3, B18 내지 B20, B24, B31, 청구항 5에 관한 본딩 와이어는 실시예 1 내지 33, B1 내지 B33, 청구항 6에 관한 본딩 와이어는 실시예 B1 내지 B3, B5, B8 내지 B15, B17, B19 내지 B20, B22 내지 B26, B29 내지 B33, 청구항 7에 관한 본딩 와이어는 실시예 B1, B4 내지 B6, B8 내지 B18, B20, B22, B24 내지 B33, 청구항 8에 관한 본딩 와이어는 실시예 2, 3, 5 내지 18, 20 내지 30, 32, 33, B2, B3, B5 내지 B18, B20 내지 B30, B32, B33, 청구항 9에 관한 본딩 와이어는 실시예 1 내지 3, 5, 7 내지 16, 19 내지 24, 26 내지 33, B1 내지 B3, B5, B7 내지 B16, B19 내지 B24, B26 내지 B33, 청구항 10에 관한 본딩 와이어는 실시예 2, 3, 5, 7 내지 10, 12 내지 16, 18 내지 24, 26 내지 33, B2, B3, B5, B7 내지 B10, B12 내지 B16, B18 내지 B24, B26 내지 B33, 청구항 11에 관한 본딩 와이어는 실시예 1, 2, 5 내지 9, 12, 14 내지 17, 19, 21 내지 23, 25 내지 33, B1, B2, B5 내지 B9, B12, B14 내지 B17, B19, B21 내지 B23, B25 내지 B33, 청구항 12에 관한 본딩 와이어는 실시예 1, 2, 4 내지 12, 15, 19, 21 내지 23, 26 내지 33, B1, B2, B4 내지 B12, B15, B19, B21 내지 B23, B26 내지 B33, 청구항 13에 관한 본딩 와이어는 실시예 2, 3, 5 내지 20, 22 내지 26, 28 내지 33, B2, B3, B5 내지 B20, B22 내지 B26, B28 내지 B33에 상당한다. 비교예 1 내지 9, BC1 내지 BC9에서는 청구항 1을 만족하지 않는 경우의 결과를 나타낸다. The bonding wire according to claim 1 is Examples 1 to 33, B1 to B33, and the bonding wire according to Claim 2 is Examples 1 to 32, B1 to B32, and the bonding wire according to Claim 3 is Examples 2, 4, and 7, The bonding wires according to 8, 10, 14, 18, 24, 27, 29, 32, B2, B4, B7, B8, B10, B14, B18, B24, B27, B29, B32, and claim 4 are in Examples 3 and 18. Bonding wires related to the 20 to 24, 31, B3, B18 to B20, B24, B31, claim 5 are Examples 1 to 33, B1 to B33, the bonding wires according to claim 6 are Examples B1 to B3, B5, B8 The bonding wires according to Examples B1, B4 to B6, B8 to B18, B20, B22, B24 to B33, and Claim 8 to B15, B17, B19 to B20, B22 to B26, B29 to B33, and Claim 8 Bonding wires according to Examples 2, 3, 5 to 18, 20 to 30, 32, 33, B2, B3, B5 to B18, B20 to B30, B32, B33, and Claims 9 to 3, 5, 7 to 16, 19 to 24, 26 to 33, B1 B3, B5, B7 to B16, B19 to B24, B26 to B33, the bonding wire according to claim 10, Examples 2, 3, 5, 7 to 10, 12 to 16, 18 to 24, 26 to 33, B2, The bonding wires according to B3, B5, B7 to B10, B12 to B16, B18 to B24, B26 to B33, and Claim 11 are Examples 1, 2, 5 to 9, 12, 14 to 17, 19, 21 to 23, 25 The bonding wire which concerns on -33, B1, B2, B5-B9, B12, B14-B17, B19, B21-B23, B25-B33, Claim 12 is Example 1, 2, 4-12, 15, 19, 21- 23, 26 to 33, B1, B2, B4 to B12, B15, B19, B21 to B23, B26 to B33, the bonding wire according to claim 13 is Example 2, 3, 5 to 20, 22 to 26, 28 to 33 , B2, B3, B5 to B20, B22 to B26, and B28 to B33. In Comparative Examples 1 to 9 and BC1 to BC9, the results when the claim 1 is not satisfied are shown.
각각의 청구항의 대표예에 대하여 평가 결과의 일부를 설명한다. A part of evaluation result is demonstrated about the representative example of each claim.
실시예 1 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12 ㎛의 범위이면, TCT 시험에서 신뢰성이 높은 것이 확인되었다. 한편, 외층이 없는 종래의 단층 구리 와이어에 관한 비교예 1, 또는 외층의 두께가 0.021 ㎛ 미만인 비교예 2, 4, 6, 8에서는 표준 조건의 TCT 시험에서도 불량이 확인되었다. 바람직한 사례로서 외층의 두께가 0.025 내지 0.095 ㎛의 범위인 실시예 2, 3, 6 내지 18, 21 내지 23, 26, 28 내지 30, 33에서는 극히 가혹한 조건의 TCT 시험에서도 불량 수를 1% 미만으로 억제할 수 있고, 또한 외층의 두께가 0.03 내지 0.085 ㎛의 범위인 실시예 2, 3, 6 내지 16, 22, 23, 26, 28 내지 30에서는 불량은 발생하지 않고, 높은 신뢰성이 얻어지는 것을 확인하였다.As for the multilayer copper bonding wire of Examples 1-33, when the thickness of the outer layer which concerns on this invention is 0.021 to 0.12 micrometer, it was confirmed that reliability was high by TCT test. On the other hand, in the comparative example 1 regarding the conventional single layer copper wire without an outer layer, or the comparative examples 2, 4, 6, and 8 whose thickness of an outer layer is less than 0.021 micrometer, defect was also confirmed by the TCT test of standard conditions. As a preferred example, in Examples 2, 3, 6 to 18, 21 to 23, 26, 28 to 30 and 33, where the thickness of the outer layer is in the range of 0.025 to 0.095 μm, the number of defects is less than 1% even in the extremely severe TCT test. In Examples 2, 3, 6, 16, 22, 23, 26, and 28 to 30, which can be suppressed and the thickness of the outer layer is in the range of 0.03 to 0.085 µm, it was confirmed that no defect occurred and high reliability was obtained. .
실시예 1 내지 32의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12㎛의 범위이고, 외층을 구성하는 금속 M이 Au, Pd, Pt, Rh로부터 선택되는 1종 이상을 주성분으로 함으로써, 외층의 주성분이 Ag으로 이루어지는 실시예 33과 비교하고, TCT 시험의 신뢰성, 볼 형성성, 접합 형상 등을 종합적으로 개선하는 것이 비교적 용이한 것을 확인하였다. The multilayer copper bonding wires of Examples 1 to 32 have a thickness of the outer layer in the range of 0.021 to 0.12 µm according to the present invention, and the metal M constituting the outer layer has at least one member selected from Au, Pd, Pt, and Rh as main components. By doing this, it was confirmed that it is relatively easy to comprehensively improve the reliability, ball formability, joining shape, and the like of the TCT test, compared with Example 33 in which the main component of the outer layer is made of Ag.
비교예 3, 5, 7, 9에서는 외층의 두께가 0.021 ㎛ 초과이며, 웨지 접합성은 양호하고, 통상의 지름의 볼에서도 형상은 양호하지만, 소경 볼에서는 형상 불량이 발생하고 있기 때문에, 용도가 한정되는 것이 염려된다. In Comparative Examples 3, 5, 7, and 9, the thickness of the outer layer is more than 0.021 μm, the wedge bonding property is good, and the shape is good even in the ball of normal diameter, but the use is limited because the shape defect occurs in the small ball. I'm concerned.
실시예 2, 4, 7, 8, 10, 14, 18, 24, 27, 29, 32의 복층 구리 본딩 와이어는 본 발명에 관한 심재가 P, B, Ir, Zr, Bi, Ti, Au, Ag, Sn 또는 희토류 원소로부터 선택되는 1종 이상의 원소를 0.0001 내지 0.03 mol%의 농도 범위에서 함유함으로써, 웨지 접합의 필 시험에서의 파단 연신이 높은 것을 확인하였다. 이것은 웨지 접합의 신뢰성이 종합적으로 향상되는 것을 시사한다. As for the multilayer copper bonding wire of Example 2, 4, 7, 8, 10, 14, 18, 24, 27, 29, 32, the core material which concerns on this invention is P, B, Ir, Zr, Bi, Ti, Au, Ag It was confirmed that the breaking elongation in the peel test of the wedge junction was high by containing at least one element selected from, Sn or a rare earth element in a concentration range of 0.0001 to 0.03 mol%. This suggests that the reliability of the wedge joint is improved overall.
실시예 3, 18 내지 20, 24, 31의 복층 구리 본딩 와이어는 본 발명에 관한 외층이, Bi, P, Se, Tl로부터 선택되는 1종 이상의 원소를 함유하고, 그 표면 농도가 0.01 내지 5 mol%인 범위에서 함유함으로써, 캐필러리 막힘이 억제되어 있는 것이 확인되었다. 이에 의하여, 캐필러리의 교환 수명을 길게 하는 것이 가능하고, 양산성이 향상된다.As for the multilayer copper bonding wire of Example 3, 18-20, 24, 31, the outer layer which concerns on this invention contains 1 or more types of elements chosen from Bi, P, Se, Tl, and the surface concentration is 0.01-5 mol It was confirmed that capillary clogging was suppressed by containing in the range which is%. Thereby, it is possible to lengthen the exchange life of a capillary, and mass productivity improves.
실시예 B1 내지 B3, B5, B8 내지 B15, B17, B19 내지 B20, B22 내지 B26, B29 내지 B33의 복층 구리 본딩 와이어는 본 발명의 외층의 두께가 0.021 내지 0.12㎛의 범위이며, 또한 상기 외층의 최표면의 탄소 농도가 15 내지 80 mol%의 범위이며, 표면으로부터 깊이 방향으로 탄소 농도가 5 내지 80 mol%의 범위인 영역의 두께가 0.0004 내지 0.01 ㎛이면,와이어 표면의 미끄러짐성을 높여서, 와이어의 스크래치, 깎임을 억제할 수 있는 것이 확인되었다. 좋기로는, 이 영역의 두께가 0.0007 내지 0.007 ㎛인 실시예 B1 내지 B3, B8, Bl0 내지 B15, B17, B20, B22 내지 B26, B29 내지 B33에서는 스크래치, 깎임을 억제하는 높은 효과가 확인되었다. The multilayer copper bonding wires of Examples B1 to B3, B5, B8 to B15, B17, B19 to B20, B22 to B26, and B29 to B33 have a thickness of the outer layer of the present invention in the range of 0.021 to 0.12 mu m, If the thickness of the region where the carbon concentration of the outermost surface is in the range of 15 to 80 mol% and the carbon concentration is in the range of 5 to 80 mol% in the depth direction from the surface is 0.0004 to 0.01 μm, the slipperiness of the wire surface is increased, and the wire It was confirmed that scratches and chipping can be suppressed. Specifically, in Examples B1 to B3, B8, B0 to B15, B17, B20, B22 to B26, and B29 to B33 having a thickness of 0.0007 to 0.007 µm, a high effect of suppressing scratches and chipping was confirmed.
실시예 B1, B4 내지 B6, B8 내지 B18, B20, B22, B24 내지 B33의 복층 구리 본딩 와이어는 본 발명의 외층의 두께가 0.021 내지 0.12 ㎛의 범위이며, 또한, 상기 외층의 최표면의 산소 농도가 1 내지 25 mol%의 범위이며, 이 외층의 표면에 산소 농도가 0.2 내지 25 mol%의 범위인 영역의 두께가 0.0005 내지 0.007㎛의 범위이면, 와이어의 풀림성이 개선되어, 본딩에 의한 루프 형성에서의 컬, 절곡을 저감할 수 있는 양호한 결과가 확인되었다. In the multilayer copper bonding wires of Examples B1, B4 to B6, B8 to B18, B20, B22, and B24 to B33, the thickness of the outer layer of the present invention is in the range of 0.021 to 0.12 µm, and the oxygen concentration of the outermost surface of the outer layer is Is in the range of 1 to 25 mol% and the thickness of the region having an oxygen concentration in the range of 0.2 to 25 mol% on the surface of the outer layer is in the range of 0.0005 to 0.007 µm, the unwinding property of the wire is improved, and the loop by bonding The favorable result which can reduce curl and bending in formation was confirmed.
실시예 2, 3, 5 내지 18, 20 내지 30, 32, 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12 ㎛의 범위이며, 또한, 금속 M의 농도가 10 mol% 이상인 영역의 두께가 0.03 내지 0.2 ㎛이면, 리플로우 시험에서 신뢰성이 높은 것이 확인되었다. 좋기로는, 이 영역의 두께가 0.04 내지 0.2 ㎛인 실시예 2, 3, 6 내지 18, 20, 22 내지 25, 26 내지 30, 32, 33에서는 저온에서 와이어 접속된 시료에서도 리플로우 내성이 높은 것이 확인되었다. The multilayer copper bonding wire of Example 2, 3, 5-18, 20-30, 32, 33 has the thickness of the outer layer which concerns on this invention in the range of 0.021-0.12 micrometer, and the metal M concentration is 10 mol% or more. When the thickness of the region was 0.03 to 0.2 µm, it was confirmed that the reliability was high in the reflow test. Specifically, in Examples 2, 3, 6 to 18, 20, 22 to 25, 26 to 30, 32, and 33 having a thickness of 0.04 to 0.2 µm, the reflow resistance is high even in a wire-connected sample at low temperature. It was confirmed.
실시예 1 내지 3, 5, 7 내지 16, 19 내지 24, 26 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12 ㎛의 범위이며, 또한, 금속 M의 농도가 총계로 90 mol% 이상인 영역의 두께가 0.004 내지 0.07 ㎛인 것으로, 대기에 30일간 방치한 후의 웨지 접합성이 양호하고, 외층을 가지지 않은 비교예 1, 또는 외층의 두께가 0.021 ㎛ 미만인 비교예 2, 4, 6, 8과 비교하여도, 본딩 와이어의 보관 수명이 개선되어 있는 것이 확인되었다. 좋기로는, 이 영역의 두께가 0.008 내지 0.06 ㎛인 실시예 2, 3, 7 내지 16, 19, 22 내지 24, 27 내지 33에서는 60일간 방치한 후의 웨지 접합성이 양호하다는 것이 확인되었다.
In the multilayer copper bonding wires of Examples 1 to 3, 5, 7 to 16, 19 to 24, and 26 to 33, the thickness of the outer layer according to the present invention is in the range of 0.021 to 0.12 µm, and the concentration of metal M is in total. The thickness of the region of 90 mol% or more is 0.004 to 0.07 µm, the wedge bonding property after leaving in the air for 30 days is good, Comparative Example 1 without the outer layer, or Comparative Examples 2, 4, the thickness of the outer layer is less than 0.021 µm, Compared with 6, 8, it was confirmed that the storage life of a bonding wire is improved. Preferably, in Example 2, 3, 7-16, 19, 22-24, 27-33 whose thickness of this area | region is 0.008-0.06 micrometer, it was confirmed that wedge joining property after leaving for 60 days is favorable.
실시예 2, 3, 5, 7 내지 10, 12 내지 16, 18 내지 24, 26 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12 ㎛의 범위이며, 또한, 금속 M의 농도가 총계로 96 mol% 이상인 영역의 두께가 0.002 내지 0.06 ㎛이면, 본딩 공정에 있어서 접속된 와이어가 스테이지 상에서 가열되어도, 고온에서의 산화를 억제할 수 있는 것을 확인하였다. The multilayer copper bonding wire of Examples 2, 3, 5, 7-10, 12-16, 18-24, 26-33, the thickness of the outer layer which concerns on this invention is 0.021-0.12 micrometer, When the density | concentration of the area | region whose total concentration is 96 mol% or more is 0.002-0.06 micrometer, it was confirmed that even if the wire connected in the bonding process is heated on a stage, oxidation at high temperature can be suppressed.
실시예 1, 2, 5 내지 9, 12, 14 내지 17, 19, 21 내지 23, 25 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12㎛의 범위이고, 또한, 최표면의 구리 농도가 0.5 내지 45 mol%이면, 볼 접합시의 편심을 저감시키고, 양호한 접합 형상을 얻을 수 있다. 좋기로는, 구리 농도가 0.5 내지 20 mol%인 실시예 1, 2, 5, 7, 8, 12, 14 내지 16, 19, 21, 22, 25, 27, 29, 31, 32이면, 소경 볼에서도 접합 형상이 개선되었다. The multilayer copper bonding wire of Examples 1, 2, 5-9, 12, 14-17, 19, 21-23, 25-33 has the thickness of the outer layer which concerns on this invention in the range of 0.021-0.12 micrometer, If the copper concentration on the surface is 0.5 to 45 mol%, the eccentricity at the time of ball bonding can be reduced, and a favorable joining shape can be obtained. Specifically, if the Examples 1, 2, 5, 7, 8, 12, 14 to 16, 19, 21, 22, 25, 27, 29, 31, 32 having a copper concentration of 0.5 to 20 mol%, the small diameter ball The joint shape was also improved.
실시예 1, 2, 4 내지 12, 15, 19, 21 내지 23, 26 내지 33의 복층 구리 본딩 와이어는 본 발명의 외층의 두께가 0.021 내지 0.12 ㎛의 범위이며, 한편, 외층의 표면에 금속계 원소의 총계에 대한 구리 농도가 1 내지 30 mol%의 범위인 영역의 두께가 0.0005 내지 0.008 ㎛이면, 볼 선두부의 오목부 및 볼 표면의 미소 요철 등을 저감할 수 있다. In the multilayer copper bonding wires of Examples 1, 2, 4 to 12, 15, 19, 21 to 23, and 26 to 33, the thickness of the outer layer of the present invention is in the range of 0.021 to 0.12 µm, on the other hand, the metallic element on the surface of the outer layer. If the thickness of the region whose copper concentration is in the range of 1 to 30 mol% with respect to the total of is 0.0005 to 0.008 µm, the concave portion of the ball head and the fine unevenness on the surface of the ball can be reduced.
실시예 2, 3, 5 내지 20, 22 내지 26, 28 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한, 외층의 두께가 0.021 내지 0.12㎛의 범위이며, 또한, 구리 이외의 금속 M의 농도가 총계로 0.05 내지 3 mol%인 것으로, 볼 접합시의 Al 스플래쉬를 저감시키는 효과를 얻을 수 있다. The multilayer copper bonding wire of Examples 2, 3, 5-20, 22-26, 28-33, the thickness of the outer layer which concerns on this invention is 0.021-0.12 micrometer, and the density | concentration of metal M other than copper is By 0.05 to 3 mol% in total, the effect of reducing Al splash at the time of ball joining can be acquired.
실시예 1 내지 33의 복층 구리 본딩 와이어는 본 발명에 관한 외층의 두께가 0.021 내지 0.12 ㎛의 범위인 것으로, 볼 형성시의 쉴딩 가스가 5 vol% H2+N2의 표준 가스이고 양호한 볼 형상을 얻을 수 있을 뿐만 아니라, 순 N2 가스에서도 볼 형상이 거의 진구이고, 양호하다는 것이 확인되었다. In the multilayer copper bonding wires of Examples 1 to 33, the thickness of the outer layer according to the present invention is in the range of 0.021 to 0.12 µm, and the shielding gas at the time of ball formation is a standard gas of 5 vol% H 2 + N 2 and has a good ball shape. It was confirmed that not only can be obtained, but also the pure ball shape was almost spherical and good even in pure N 2 gas.
표 1Table 1
표 2Table 2
표 3TABLE 3
본 발명의 본딩 와이어에 의하면 열 사이클 시험에서의 불량을 저감할 수 있다. 또한, 볼 접합성을 향상시킬 수 있다. 또한, 와이어 보관 수명을 개선할 수 있다. 그 결과, 재료비가 적게 들고, 볼 접합성, 열 사이클 시험 또는 리플로우 시험의 신뢰성이 우수하며, 보관 수명이 양호하고, 협피치용 세선화에도 적응하는 등의 구리계 본딩 와이어를 제공하는 것이 가능하게 된다. According to the bonding wire of this invention, the defect in a heat cycle test can be reduced. In addition, the ball bonding property can be improved. In addition, the wire storage life can be improved. As a result, it is possible to provide a copper-based bonding wire such as low material cost, excellent ball bonding, thermal cycle test or reflow test reliability, good shelf life, and adaptation to narrow pitch thinning. do.
Claims (12)
Pd 및 구리를 함유하고, 상기 심재 위에 설치된 외층을 가진 반도체 장치용 본딩 와이어로서,
상기 외층은 50 mol%이상의 Pd를 함유하는 부위이며,
상기 외층의 두께가 0.021 내지 0.12 ㎛인 것을 특징으로 하는 반도체 장치용 본딩 와이어. A core material having a ratio of copper concentration of 50 mol% or more to the total of copper and Pd concentrations,
A bonding wire for a semiconductor device containing Pd and copper and having an outer layer provided on the core,
The outer layer is a portion containing 50 mol% or more of Pd,
The thickness of said outer layer is 0.021-0.12 micrometers, The bonding wire for semiconductor devices characterized by the above-mentioned.
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