KR101339556B1 - Led 패턴이 구비된 기판의 가공 방법 - Google Patents
Led 패턴이 구비된 기판의 가공 방법 Download PDFInfo
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- KR101339556B1 KR101339556B1 KR1020120082603A KR20120082603A KR101339556B1 KR 101339556 B1 KR101339556 B1 KR 101339556B1 KR 1020120082603 A KR1020120082603 A KR 1020120082603A KR 20120082603 A KR20120082603 A KR 20120082603A KR 101339556 B1 KR101339556 B1 KR 101339556B1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2011-187175 | 2011-08-30 | ||
JP2011187175A JP5494592B2 (ja) | 2011-08-30 | 2011-08-30 | Ledパターン付き基板の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130024754A KR20130024754A (ko) | 2013-03-08 |
KR101339556B1 true KR101339556B1 (ko) | 2013-12-10 |
Family
ID=47799424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120082603A KR101339556B1 (ko) | 2011-08-30 | 2012-07-27 | Led 패턴이 구비된 기판의 가공 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5494592B2 (zh) |
KR (1) | KR101339556B1 (zh) |
CN (1) | CN102969408A (zh) |
TW (1) | TWI502764B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101508A (ja) * | 1981-12-14 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | アンテナ装置 |
JP6210415B2 (ja) * | 2013-07-05 | 2017-10-11 | パナソニックIpマネジメント株式会社 | 紫外線発光素子の製造方法 |
JP6223801B2 (ja) * | 2013-12-05 | 2017-11-01 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP6298658B2 (ja) * | 2014-03-06 | 2018-03-20 | 旭化成株式会社 | 窒化物半導体素子、窒化物半導体素子の製造方法、およびレーザ加工深さの検査方法 |
JP6301726B2 (ja) * | 2014-05-07 | 2018-03-28 | 株式会社ディスコ | 光デバイスの加工方法 |
JP2016082159A (ja) * | 2014-10-21 | 2016-05-16 | 旭化成株式会社 | 窒化物半導体素子 |
JP2016111119A (ja) * | 2014-12-04 | 2016-06-20 | 株式会社ディスコ | 光デバイスの加工方法 |
CN104465360A (zh) * | 2014-12-25 | 2015-03-25 | 安徽安芯电子科技有限公司 | 晶圆及其刻蚀方法 |
CN110418996A (zh) * | 2017-01-20 | 2019-11-05 | 株式会社Nsc | 液晶面板制造方法 |
JP6998703B2 (ja) * | 2017-08-29 | 2022-02-04 | 古河電気工業株式会社 | 透明導電膜付基板の製造方法、透明導電膜付基板及び太陽電池 |
CN108422101B (zh) * | 2018-04-12 | 2020-04-14 | 无锡奥夫特光学技术有限公司 | 一种蓝宝石光学窗口的切割方法 |
JP6578533B1 (ja) * | 2018-06-13 | 2019-09-25 | 株式会社Nsc | 液晶パネル製造方法 |
JP7258416B2 (ja) * | 2018-12-06 | 2023-04-17 | 株式会社ディスコ | 被加工物の加工方法、デバイスチップの製造方法 |
JP7217623B2 (ja) * | 2018-12-07 | 2023-02-03 | 株式会社ディスコ | デバイスチップの製造方法 |
JP6819897B2 (ja) * | 2019-08-28 | 2021-01-27 | 日亜化学工業株式会社 | 発光素子の製造方法 |
DE102020215554A1 (de) * | 2020-12-09 | 2022-06-09 | Robert Bosch Gesellschaft mit beschränkter Haftung | Substratscheibe, Verfahren zum Herstellen einer Substratscheibe und Verfahren zum Herstellen einer Mehrzahl von Bauelementen |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040087674A (ko) * | 2003-04-07 | 2004-10-15 | 삼성전기주식회사 | 레이저 스크라이빙공정를 이용한 반도체 웨이퍼 절단방법 |
KR20080027555A (ko) * | 2006-09-25 | 2008-03-28 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 질화물 반도체 발광소자의 제조방법 |
KR20090073934A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 및 그 제조방법 |
KR20110047131A (ko) * | 2009-10-29 | 2011-05-06 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 레이저 가공 방법, 피가공물의 분할 방법 및 레이저 가공 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643611B2 (zh) * | 1973-03-22 | 1981-10-14 | ||
JPS5034167A (zh) * | 1973-07-27 | 1975-04-02 | ||
JP2004228290A (ja) * | 2003-01-22 | 2004-08-12 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
JP2004165227A (ja) * | 2002-11-08 | 2004-06-10 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
JP2004179556A (ja) * | 2002-11-28 | 2004-06-24 | Kyocera Corp | セラミック基板とその溝部形成方法及びこれに用いるレーザー加工装置 |
EP1756857B1 (en) * | 2004-06-11 | 2013-08-14 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
WO2006062017A1 (ja) * | 2004-12-08 | 2006-06-15 | Laser Solutions Co., Ltd. | 被分割体における分割起点形成方法、被分割体の分割方法、およびパルスレーザー光による被加工物の加工方法 |
JP4774928B2 (ja) * | 2005-11-07 | 2011-09-21 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
JP2010274328A (ja) * | 2009-04-30 | 2010-12-09 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工方法及びレーザ加工装置 |
CN101552312A (zh) * | 2009-05-12 | 2009-10-07 | 上海蓝光科技有限公司 | 一种发光二极管芯片制作方法 |
JP2011097024A (ja) * | 2009-09-29 | 2011-05-12 | Jsr Corp | 光半導体素子の製造方法、及び、光半導体素子保護層形成用組成物 |
-
2011
- 2011-08-30 JP JP2011187175A patent/JP5494592B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-16 TW TW101117444A patent/TWI502764B/zh not_active IP Right Cessation
- 2012-05-16 CN CN2012101521806A patent/CN102969408A/zh active Pending
- 2012-07-27 KR KR1020120082603A patent/KR101339556B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040087674A (ko) * | 2003-04-07 | 2004-10-15 | 삼성전기주식회사 | 레이저 스크라이빙공정를 이용한 반도체 웨이퍼 절단방법 |
KR20080027555A (ko) * | 2006-09-25 | 2008-03-28 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 질화물 반도체 발광소자의 제조방법 |
KR20090073934A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 및 그 제조방법 |
KR20110047131A (ko) * | 2009-10-29 | 2011-05-06 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 레이저 가공 방법, 피가공물의 분할 방법 및 레이저 가공 장치 |
Also Published As
Publication number | Publication date |
---|---|
JP2013051246A (ja) | 2013-03-14 |
TW201310693A (zh) | 2013-03-01 |
JP5494592B2 (ja) | 2014-05-14 |
CN102969408A (zh) | 2013-03-13 |
TWI502764B (zh) | 2015-10-01 |
KR20130024754A (ko) | 2013-03-08 |
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