KR101339556B1 - Ｌｅｄ 패턴이 구비된 기판의 가공 방법 - Google Patents

Ｌｅｄ 패턴이 구비된 기판의 가공 방법 Download PDF

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Publication number: KR101339556B1
Authority: KR; South Korea
Prior art keywords: substrate; processing; led pattern; region; led
Prior art date: 2011-08-30

Application number

KR1020120082603A

Other languages

English (en)

Korean (ko)

Other versions

KR20130024754A (ko

Inventor

노리유끼 곤도

쇼헤이 나가또모

이꾸요시 나까따니

Original Assignee

미쓰보시 다이야몬도 고교 가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-08-30

Filing date

2012-07-27

Publication date

2013-12-10

2012-07-27 Application filed by 미쓰보시 다이야몬도 고교 가부시키가이샤 filed Critical 미쓰보시 다이야몬도 고교 가부시키가이샤

2013-03-08 Publication of KR20130024754A publication Critical patent/KR20130024754A/ko

2013-12-10 Application granted granted Critical

2013-12-10 Publication of KR101339556B1 publication Critical patent/KR101339556B1/ko

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Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)

KR1020120082603A 2011-08-30 2012-07-27 Ｌｅｄ 패턴이 구비된 기판의 가공 방법 KR101339556B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JPJP-P-2011-187175		2011-08-30
JP2011187175A JP5494592B2 (ja)	2011-08-30	2011-08-30	Ｌｅｄパターン付き基板の加工方法

Publications (2)

Publication Number	Publication Date
KR20130024754A KR20130024754A (ko)	2013-03-08
KR101339556B1 true KR101339556B1 (ko)	2013-12-10

Family

ID=47799424

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020120082603A KR101339556B1 (ko)	2011-08-30	2012-07-27	Ｌｅｄ 패턴이 구비된 기판의 가공 방법

Country Status (4)

Country	Link
JP (1)	JP5494592B2 (zh)
KR (1)	KR101339556B1 (zh)
CN (1)	CN102969408A (zh)
TW (1)	TWI502764B (zh)

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JPS58101508A (ja) *	1981-12-14	1983-06-16	Nippon Telegr & Teleph Corp <Ntt>	アンテナ装置
JP6210415B2 (ja) *	2013-07-05	2017-10-11	パナソニックＩｐマネジメント株式会社	紫外線発光素子の製造方法
JP6223801B2 (ja) *	2013-12-05	2017-11-01	株式会社ディスコ	光デバイスウェーハの加工方法
JP6298658B2 (ja) *	2014-03-06	2018-03-20	旭化成株式会社	窒化物半導体素子、窒化物半導体素子の製造方法、およびレーザ加工深さの検査方法
JP6301726B2 (ja) *	2014-05-07	2018-03-28	株式会社ディスコ	光デバイスの加工方法
JP2016082159A (ja) *	2014-10-21	2016-05-16	旭化成株式会社	窒化物半導体素子
JP2016111119A (ja) *	2014-12-04	2016-06-20	株式会社ディスコ	光デバイスの加工方法
CN104465360A (zh) *	2014-12-25	2015-03-25	安徽安芯电子科技有限公司	晶圆及其刻蚀方法
CN110418996A (zh) *	2017-01-20	2019-11-05	株式会社Ｎｓｃ	液晶面板制造方法
JP6998703B2 (ja) *	2017-08-29	2022-02-04	古河電気工業株式会社	透明導電膜付基板の製造方法、透明導電膜付基板及び太陽電池
CN108422101B (zh) *	2018-04-12	2020-04-14	无锡奥夫特光学技术有限公司	一种蓝宝石光学窗口的切割方法
JP6578533B1 (ja) *	2018-06-13	2019-09-25	株式会社Ｎｓｃ	液晶パネル製造方法
JP7258416B2 (ja) *	2018-12-06	2023-04-17	株式会社ディスコ	被加工物の加工方法、デバイスチップの製造方法
JP7217623B2 (ja) *	2018-12-07	2023-02-03	株式会社ディスコ	デバイスチップの製造方法
JP6819897B2 (ja) *	2019-08-28	2021-01-27	日亜化学工業株式会社	発光素子の製造方法
DE102020215554A1 (de) *	2020-12-09	2022-06-09	Robert Bosch Gesellschaft mit beschränkter Haftung	Substratscheibe, Verfahren zum Herstellen einer Substratscheibe und Verfahren zum Herstellen einer Mehrzahl von Bauelementen

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KR20080027555A (ko) *	2006-09-25	2008-03-28	엘지이노텍 주식회사	질화물 반도체 발광소자 및 질화물 반도체 발광소자의 제조방법
KR20090073934A (ko) *	2007-12-31	2009-07-03	주식회사 에피밸리	3족 질화물 반도체 발광소자 및 그 제조방법
KR20110047131A (ko) *	2009-10-29	2011-05-06	미쓰보시 다이야몬도 고교 가부시키가이샤	레이저 가공 방법, 피가공물의 분할 방법 및 레이저 가공 장치

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2011
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2012
- 2012-05-16 TW TW101117444A patent/TWI502764B/zh not_active IP Right Cessation
- 2012-05-16 CN CN2012101521806A patent/CN102969408A/zh active Pending
- 2012-07-27 KR KR1020120082603A patent/KR101339556B1/ko not_active IP Right Cessation

Patent Citations (4)

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KR20040087674A (ko) *	2003-04-07	2004-10-15	삼성전기주식회사	레이저 스크라이빙공정를 이용한 반도체 웨이퍼 절단방법
KR20080027555A (ko) *	2006-09-25	2008-03-28	엘지이노텍 주식회사	질화물 반도체 발광소자 및 질화물 반도체 발광소자의 제조방법
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Also Published As

Publication number	Publication date
JP2013051246A (ja)	2013-03-14
TW201310693A (zh)	2013-03-01
JP5494592B2 (ja)	2014-05-14
CN102969408A (zh)	2013-03-13
TWI502764B (zh)	2015-10-01
KR20130024754A (ko)	2013-03-08

Legal Events

Date	Code	Title	Description
2012-07-27	A201	Request for examination
2013-05-22	E902	Notification of reason for refusal
2013-07-01	AMND	Amendment
2013-10-02	E601	Decision to refuse application
2013-10-31	AMND	Amendment
2013-11-22	X701	Decision to grant (after re-examination)
2013-12-03	GRNT	Written decision to grant
2016-11-23	FPAY	Annual fee payment	Payment date: 20161123 Year of fee payment: 4
2017-12-04	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
KR101339556B1 (ko)	2013-12-10	Ｌｅｄ 패턴이 구비된 기판의 가공 방법
KR101241936B1 (ko)	2013-03-11	레이저 가공 방법, 피가공물의 분할 방법 및 레이저 가공 장치
JP5056839B2 (ja)	2012-10-24	被加工物の加工方法および被加工物の分割方法
JP5312761B2 (ja)	2013-10-09	切断用加工方法
KR101979397B1 (ko)	2019-05-16	패턴이 있는 기판의 분할 방법
JP2008087027A (ja)	2008-04-17	レーザ加工装置
JP5104920B2 (ja)	2012-12-19	レーザー加工装置、被加工物の加工方法および被加工物の分割方法
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JP2014090011A (ja)	2014-05-15	Ｌｅｄパターン付き基板の加工方法
JP5360278B2 (ja)	2013-12-04	レーザー加工装置、被加工物の加工方法および被加工物の分割方法
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KR101437229B1 (ko)	2014-09-02	Led 패턴 형성 기판의 가공 방법 및 led 패턴 형성 기판의 가공 시스템
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JP5104912B2 (ja)	2012-12-19	レーザー加工装置
JP5624174B2 (ja)	2014-11-12	被加工物の加工方法、被加工物の分割方法およびレーザー加工装置
JP5382101B2 (ja)	2014-01-08	被加工物の加工方法および被加工物の分割方法
JP5282812B2 (ja)	2013-09-04	被加工物の加工方法および被加工物の分割方法