KR101331293B1 - 산화물 소결체 및 산화물 반도체 박막 - Google Patents

산화물 소결체 및 산화물 반도체 박막 Download PDF

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Publication number: KR101331293B1
Authority: KR; South Korea
Prior art keywords: thin film; oxide; oxide semiconductor; sintered body; semiconductor thin
Prior art date: 2010-08-31

Application number

KR1020137007631A

Other languages

English (en)

Korean (ko)

Other versions

KR20130041365A (ko

Inventor

히데오 다카미

고조 오사다

Original Assignee

제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-08-31

Filing date

2011-07-27

Publication date

2013-11-20

2011-07-27 Application filed by 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 filed Critical 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤

2013-04-24 Publication of KR20130041365A publication Critical patent/KR20130041365A/ko

2013-11-20 Application granted granted Critical

2013-11-20 Publication of KR101331293B1 publication Critical patent/KR101331293B1/ko

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239000010409 thin film Substances 0.000 title claims abstract description 31
239000004065 semiconductor Substances 0.000 title claims abstract description 26
239000011701 zinc Substances 0.000 claims abstract description 57
229910052738 indium Inorganic materials 0.000 claims abstract description 21
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 21
229910052751 metal Inorganic materials 0.000 claims abstract description 20
239000002184 metal Substances 0.000 claims abstract description 20
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
239000001301 oxygen Substances 0.000 claims abstract description 18
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 11
238000000034 method Methods 0.000 claims description 14
239000011159 matrix material Substances 0.000 claims description 4
239000010408 film Substances 0.000 abstract description 36
239000000203 mixture Substances 0.000 abstract description 23
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 6
229910052733 gallium Inorganic materials 0.000 abstract description 6
229910052782 aluminium Inorganic materials 0.000 abstract description 5
229910052719 titanium Inorganic materials 0.000 abstract description 5
238000004544 sputter deposition Methods 0.000 description 15
239000007789 gas Substances 0.000 description 14
239000002245 particle Substances 0.000 description 14
239000002994 raw material Substances 0.000 description 14
239000011135 tin Substances 0.000 description 14
239000000843 powder Substances 0.000 description 13
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
238000005477 sputtering target Methods 0.000 description 10
238000000227 grinding Methods 0.000 description 9
230000002159 abnormal effect Effects 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 8
239000000758 substrate Substances 0.000 description 8
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
238000005245 sintering Methods 0.000 description 7
229910052725 zinc Inorganic materials 0.000 description 7
238000009616 inductively coupled plasma Methods 0.000 description 6
239000012528 membrane Substances 0.000 description 6
238000004458 analytical method Methods 0.000 description 5
229910052786 argon Inorganic materials 0.000 description 5
239000011812 mixed powder Substances 0.000 description 5
239000010936 titanium Substances 0.000 description 5
230000002411 adverse Effects 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
230000000052 comparative effect Effects 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
238000005259 measurement Methods 0.000 description 4
239000000523 sample Substances 0.000 description 4
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
238000002156 mixing Methods 0.000 description 3
229910052718 tin Inorganic materials 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
229910021417 amorphous silicon Inorganic materials 0.000 description 2
239000000470 constituent Substances 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000009826 distribution Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000012535 impurity Substances 0.000 description 2
229910003437 indium oxide Inorganic materials 0.000 description 2
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
238000000465 moulding Methods 0.000 description 2
238000005498 polishing Methods 0.000 description 2
238000012545 processing Methods 0.000 description 2
239000007921 spray Substances 0.000 description 2
230000003746 surface roughness Effects 0.000 description 2
206010021143 Hypoxia Diseases 0.000 description 1
241000135309 Processus Species 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
229910007541 Zn O Inorganic materials 0.000 description 1
238000004220 aggregation Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
230000002547 anomalous effect Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000009694 cold isostatic pressing Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000005457 optimization Methods 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
239000010957 pewter Substances 0.000 description 1
229910000498 pewter Inorganic materials 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
230000008569 process Effects 0.000 description 1
238000010298 pulverizing process Methods 0.000 description 1
238000007670 refining Methods 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
239000011800 void material Substances 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1

Classifications

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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Structural Engineering (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Physical Vapour Deposition (AREA)
Compositions Of Oxide Ceramics (AREA)
Crystallography & Structural Chemistry (AREA)
Thin Film Transistor (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

KR1020137007631A 2010-08-31 2011-07-27 산화물 소결체 및 산화물 반도체 박막 KR101331293B1 (ko)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JPJP-P-2010-194455		2010-08-31
JP2010194455A JP5081959B2 (ja)	2010-08-31	2010-08-31	酸化物焼結体及び酸化物半導体薄膜
PCT/JP2011/067133 WO2012029455A1 (ja)	2010-08-31	2011-07-27	酸化物焼結体及び酸化物半導体薄膜

Publications (2)

Publication Number	Publication Date
KR20130041365A KR20130041365A (ko)	2013-04-24
KR101331293B1 true KR101331293B1 (ko)	2013-11-20

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KR1020137007631A KR101331293B1 (ko)	2010-08-31	2011-07-27	산화물 소결체 및 산화물 반도체 박막

Country Status (4)

Country	Link
JP (1)	JP5081959B2 (ja)
KR (1)	KR101331293B1 (ja)
TW (1)	TWI405863B (ja)
WO (1)	WO2012029455A1 (ja)

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Publication number	Priority date	Publication date	Assignee	Title
WO2012091126A1 (ja) *	2010-12-28	2012-07-05	株式会社神戸製鋼所	薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP5929911B2 (ja) *	2011-06-15	2016-06-08	住友電気工業株式会社	導電性酸化物およびその製造方法ならびに酸化物半導体膜
CN102779758B (zh) *	2012-07-24	2015-07-29	复旦大学	一种以铟锌铝氧化物为沟道层的薄膜晶体管的制备方法
JP6052967B2 (ja) *	2012-08-31	2016-12-27	出光興産株式会社	スパッタリングターゲット
TWI591197B (zh) *	2012-11-08	2017-07-11	Idemitsu Kosan Co	Sputtering target
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