KR101316120B1 - Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby - Google Patents
Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby Download PDFInfo
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- KR101316120B1 KR101316120B1 KR1020060136681A KR20060136681A KR101316120B1 KR 101316120 B1 KR101316120 B1 KR 101316120B1 KR 1020060136681 A KR1020060136681 A KR 1020060136681A KR 20060136681 A KR20060136681 A KR 20060136681A KR 101316120 B1 KR101316120 B1 KR 101316120B1
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Abstract
The present invention provides a method of manufacturing a light emitting device comprising forming a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer therebetween on a substrate, the method comprising: firstly growing a first conductive semiconductor layer on a substrate; And forming an aluminum layer on the first conductive semiconductor layer, performing anodization to form an aluminum layer having a plurality of holes, and using the aluminum layer having the plurality of holes as a shadow mask. Patterning etching so that a portion of the first conductive semiconductor layer is etched, removing the aluminum layer remaining on the first conductive semiconductor layer, and secondly growing the first conductive semiconductor layer; And forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer.
According to the present invention, since the light generated by the active layer in the light emitting device is scattered by a scattering center composed of an air layer having a refractive index different from that of the first conductive semiconductor layer in the first conductive semiconductor layer, the light can be efficiently emitted to the outside. This is improved.
AAO, Refractive Index, Scattering Center, Semiconductor, LED, Insulation Layer, Reflection
Description
1 is a cross-sectional view schematically showing a light emitting diode according to an embodiment of the present invention.
2 to 8 are cross-sectional views for explaining a process of manufacturing the light emitting diode shown in FIG.
<Description of the symbols for the main parts of the drawings>
100: substrate 210: buffer layer
220: N-type semiconductor layer 222: first N-type semiconductor layer
224: scattering center 226: second N-type semiconductor layer
240: active layer 260: P-type semiconductor layer
320:
The present invention relates to a light emitting device manufacturing method having a scattering center using anodized aluminum oxide and a light emitting device.
A light emitting diode, which is a typical light emitting device, is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and are configured to emit light by recombination of electrons and holes. As such a light emitting diode, a GaN-based light emitting diode is known. GaN-based light emitting diodes are manufactured by sequentially stacking GaN-based N-type semiconductor layers, active layers (or light-emitting layers), and P-type semiconductor layers on a substrate made of a material such as sapphire or SiC.
In light emitting diodes, when light is generated, a large amount of light is lost from the inside instead of being emitted outward. Therefore, in order to increase the light efficiency of the light emitting diode, it is necessary that light generated in the light emitting diode is emitted to the outside as much as possible without being lost inside the semiconductor.
The present invention has been made by this necessity, and the technical problem to be achieved by the present invention is to provide a plurality of holes in the semiconductor layer so that the light generated in the light emitting diode can be emitted to the outside by internal reflection without being lost inside. Etching using an aluminum layer as a shadow mask is provided with a plurality of scattering centers consisting of air layers to increase the amount of light emitted by scattering through the scattering centers of the air layer having a difference in refractive index between the semiconductor layer and the layer.
According to an aspect of the present invention for achieving the above technical problem, in the method for manufacturing a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Firstly growing a first conductivity type semiconductor layer, forming an aluminum layer on the first conductivity type semiconductor layer, performing anodization to form an aluminum layer having a plurality of holes formed therein, and Patterning etching a portion of the first conductivity-type semiconductor layer to be etched using an aluminum layer having a plurality of holes as a shadow mask, removing the aluminum layer remaining on the first conductivity-type semiconductor layer, and Secondly growing the first conductivity type semiconductor layer, and forming an active layer and a second conductivity type semiconductor layer on the first conductivity type semiconductor layer. Provided that the light emitting device manufacturing method.
The forming of the aluminum layer may include depositing aluminum using a thermal evaporator, an e-beam evaporator, a sputtering or a laser evaporator.
The method of manufacturing the light emitting device may further include heat treating the substrate on which the aluminum layer is formed in an atmosphere of vacuum, nitrogen, or argon after forming the aluminum layer and before performing the anodization treatment.
The anodization may be performed using a solution containing phosphoric acid, oxalic acid or sulfuric acid.
Removing the remaining aluminum layer may use a solution in which phosphoric acid and chromic acid are mixed.
The step of forming the aluminum layer having a plurality of holes by performing the anodization may be a step of forming the aluminum layer having a plurality of holes by performing anodization once or a plurality of times.
The size of the hole of the aluminum layer can be adjusted by adjusting the applied voltage, the aqueous solution or the application time of the anodization treatment.
According to another aspect of the present invention, there is provided a substrate, a first conductive semiconductor layer formed on the substrate, an active layer formed on the first conductive semiconductor layer, and a second conductive semiconductor layer formed on the active layer. Provided is a light emitting device in which a first scattering semiconductor layer includes a plurality of scattering centers formed of an air layer.
Preferably, the first conductivity type semiconductor layer may include a first layer including a plurality of scattering centers formed of an air layer, and a second layer formed on the first layer.
The plurality of scattering centers formed of the air layer may be formed in the first conductivity type semiconductor layer through etching using the aluminum layer having the plurality of holes as a shadow mask.
The substrate may be made of a sapphire substrate or a SiC substrate.
The buffer layer may include a nitride or a conductive material.
The transparent electrode layer may include a metal or a metal oxide.
The metal may be Ni / Au, and the metal oxide may be ITO or ZnO.
The aluminum layer may be made of a thickness of 500nm to 3um.
delete
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that the spirit of the invention to those skilled in the art can fully convey. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 1, a light emitting diode 1 according to an embodiment of the present invention includes a
Although the light emitting diode 1 of the present embodiment includes one light emitting cell but includes a plurality of light emitting cells, the light emitting diode which can be operated by an AC power supply is also within the scope of the present invention. Meanwhile, a portion of the N-
The
N-
In particular, the N-
A plurality of
In addition, a
The
In addition, a
As briefly mentioned above, the N-
The
The
Therefore, the
Hereinafter, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described with reference to FIGS. 2 to 8.
Referring to FIG. 2, a
In particular, the first N-
Next, as shown in FIG. 3, the
The
After depositing the
Referring to the process of forming a
Here, the anodization treatment means that the
The acid solution may be any one selected from the group consisting of phosphoric acid, oxalic acid and sulfuric acid.
After the first anodization process, the
Next, the portion oxidized by the primary anodizing treatment is removed with a solution mixed with an etchant, for example, phosphoric acid and chromic acid. When the oxidized portion of the
Afterwards, the aluminum layer remaining in the acid solution is subjected to secondary anodization to the surface of the first N-
In contrast, when the
FIG. 5 shows a photograph of the anodizing process for the
On the other hand, the size of the
In this way, the
After forming the
After removing the
Referring to FIG. 7, the second N-
Next, in the same process chamber, the
Next, although not shown, a process of forming a transparent electrode layer 320 (see FIG. 1) selected from Ni / Au, ITO, ZnO, and the like on the upper surface of the P-
Alternatively, a vertical light emitting diode in which a P-type electrode and an N-type electrode are provided up and down may be manufactured by taking a process of removing the
The invention being thus described, it will be obvious that the same way may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention as defined by the appended claims.
According to the present invention, in the light emitting device, an aluminum layer is formed on the first conductive semiconductor layer through anodizing to form an aluminum layer having a plurality of holes, and an etching is performed using the aluminum layer having the plurality of holes as a shadow mask. The pattern is formed in the first conductivity type semiconductor layer, and the first conductivity type semiconductor layer is again formed thereon so that the space in the pattern remains as an air layer to perform the scattering center function.
Accordingly, light generated by the active layer is scattered by the scattering center made of the air layer having a different refractive index than the first conductivity type semiconductor layer, so that the light efficiency can be efficiently emitted to the outside.
At this time, the pattern diameter of the scattering center to be formed may be formed to a size of several micrometers, for example 500 nanometer or less. As the diameter of the pattern is sufficiently small, a plurality of scattering centers are formed in the first conductivity type semiconductor layer and the light reflection efficiency can be improved as the effect of the reflection toward the outside through the formed scattering centers is further increased.
Claims (15)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020060136681A KR101316120B1 (en) | 2006-12-28 | 2006-12-28 | Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby |
US12/518,846 US8053789B2 (en) | 2006-12-28 | 2007-12-12 | Light emitting device and fabrication method thereof |
PCT/KR2007/006463 WO2008082097A1 (en) | 2006-12-28 | 2007-12-12 | Light emitting device and fabrication method thereof |
US13/235,063 US8546819B2 (en) | 2006-12-28 | 2011-09-16 | Light emitting device and fabrication method thereof |
US13/967,019 US8735185B2 (en) | 2006-12-28 | 2013-08-14 | Light emitting device and fabrication method thereof |
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KR1020060136681A KR101316120B1 (en) | 2006-12-28 | 2006-12-28 | Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby |
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KR101316120B1 true KR101316120B1 (en) | 2013-10-11 |
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Families Citing this family (11)
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KR101060975B1 (en) * | 2008-12-30 | 2011-08-31 | 전북대학교산학협력단 | Light emitting device having air gap and manufacturing method thereof |
US8460949B2 (en) | 2008-12-30 | 2013-06-11 | Chang Hee Hong | Light emitting device with air bars and method of manufacturing the same |
KR101154596B1 (en) | 2009-05-21 | 2012-06-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
KR101125395B1 (en) * | 2009-10-28 | 2012-03-27 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
KR101081129B1 (en) | 2009-11-30 | 2011-11-07 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
WO2012057430A1 (en) * | 2010-10-29 | 2012-05-03 | 주식회사 씨원코퍼레이션 | Led metal signboard |
KR101301847B1 (en) * | 2012-02-07 | 2013-08-29 | 조선대학교산학협력단 | Nitride Compound Based Light-Emitting Diode And Methof for Manufacturing thereof |
KR101436548B1 (en) * | 2013-05-28 | 2014-10-30 | 코닝정밀소재 주식회사 | Light extraction substrate, and method of fabricating light extraction substrate for oled |
KR101944893B1 (en) * | 2013-10-02 | 2019-02-01 | 센서 일렉트로닉 테크놀로지, 인크 | Heterostructure including anodic aluminum oxide layer |
US10454006B2 (en) | 2013-10-02 | 2019-10-22 | Sensor Electronic Technology, Inc. | Heterostructure including anodic aluminum oxide layer |
KR101632614B1 (en) * | 2014-12-24 | 2016-06-22 | 코닝정밀소재 주식회사 | Method of fabricating light extraction substrate, light extraction substrate for oled and oled including the same |
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KR20060040422A (en) * | 2004-11-05 | 2006-05-10 | 광주과학기술원 | Method of manufacturing light emitting device |
KR20060064306A (en) * | 2004-12-08 | 2006-06-13 | 삼성전기주식회사 | Manufacturing method of semiconductor device having high efficiency |
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US20040021147A1 (en) * | 2002-05-15 | 2004-02-05 | Akihiko Ishibashi | Semiconductor light emitting device and fabrication method thereof |
KR20040067125A (en) * | 2003-01-21 | 2004-07-30 | 삼성전자주식회사 | Manufacturing method of semiconductor device having high efficiency |
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