KR101316120B1 - Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby - Google Patents

Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby Download PDF

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KR101316120B1
KR101316120B1 KR1020060136681A KR20060136681A KR101316120B1 KR 101316120 B1 KR101316120 B1 KR 101316120B1 KR 1020060136681 A KR1020060136681 A KR 1020060136681A KR 20060136681 A KR20060136681 A KR 20060136681A KR 101316120 B1 KR101316120 B1 KR 101316120B1
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layer
semiconductor layer
aluminum
light emitting
type semiconductor
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KR1020060136681A
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Korean (ko)
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KR20080061695A (en
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윤여진
김창연
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서울바이오시스 주식회사
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Priority to KR1020060136681A priority Critical patent/KR101316120B1/en
Priority to US12/518,846 priority patent/US8053789B2/en
Priority to PCT/KR2007/006463 priority patent/WO2008082097A1/en
Publication of KR20080061695A publication Critical patent/KR20080061695A/en
Priority to US13/235,063 priority patent/US8546819B2/en
Priority to US13/967,019 priority patent/US8735185B2/en
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Publication of KR101316120B1 publication Critical patent/KR101316120B1/en

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Abstract

The present invention provides a method of manufacturing a light emitting device comprising forming a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer therebetween on a substrate, the method comprising: firstly growing a first conductive semiconductor layer on a substrate; And forming an aluminum layer on the first conductive semiconductor layer, performing anodization to form an aluminum layer having a plurality of holes, and using the aluminum layer having the plurality of holes as a shadow mask. Patterning etching so that a portion of the first conductive semiconductor layer is etched, removing the aluminum layer remaining on the first conductive semiconductor layer, and secondly growing the first conductive semiconductor layer; And forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer.

According to the present invention, since the light generated by the active layer in the light emitting device is scattered by a scattering center composed of an air layer having a refractive index different from that of the first conductive semiconductor layer in the first conductive semiconductor layer, the light can be efficiently emitted to the outside. This is improved.

AAO, Refractive Index, Scattering Center, Semiconductor, LED, Insulation Layer, Reflection

Description

TECHNICAL FIELD A light emitting device manufacturing method including a scattering center using anodized aluminum oxide and a light emitting device therefor.

1 is a cross-sectional view schematically showing a light emitting diode according to an embodiment of the present invention.

2 to 8 are cross-sectional views for explaining a process of manufacturing the light emitting diode shown in FIG.

<Description of the symbols for the main parts of the drawings>

100: substrate 210: buffer layer

220: N-type semiconductor layer 222: first N-type semiconductor layer

224: scattering center 226: second N-type semiconductor layer

240: active layer 260: P-type semiconductor layer

320: transparent electrode layer 330, 340: electrode pad

The present invention relates to a light emitting device manufacturing method having a scattering center using anodized aluminum oxide and a light emitting device.

A light emitting diode, which is a typical light emitting device, is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and are configured to emit light by recombination of electrons and holes. As such a light emitting diode, a GaN-based light emitting diode is known. GaN-based light emitting diodes are manufactured by sequentially stacking GaN-based N-type semiconductor layers, active layers (or light-emitting layers), and P-type semiconductor layers on a substrate made of a material such as sapphire or SiC.

In light emitting diodes, when light is generated, a large amount of light is lost from the inside instead of being emitted outward. Therefore, in order to increase the light efficiency of the light emitting diode, it is necessary that light generated in the light emitting diode is emitted to the outside as much as possible without being lost inside the semiconductor.

The present invention has been made by this necessity, and the technical problem to be achieved by the present invention is to provide a plurality of holes in the semiconductor layer so that the light generated in the light emitting diode can be emitted to the outside by internal reflection without being lost inside. Etching using an aluminum layer as a shadow mask is provided with a plurality of scattering centers consisting of air layers to increase the amount of light emitted by scattering through the scattering centers of the air layer having a difference in refractive index between the semiconductor layer and the layer.

According to an aspect of the present invention for achieving the above technical problem, in the method for manufacturing a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Firstly growing a first conductivity type semiconductor layer, forming an aluminum layer on the first conductivity type semiconductor layer, performing anodization to form an aluminum layer having a plurality of holes formed therein, and Patterning etching a portion of the first conductivity-type semiconductor layer to be etched using an aluminum layer having a plurality of holes as a shadow mask, removing the aluminum layer remaining on the first conductivity-type semiconductor layer, and Secondly growing the first conductivity type semiconductor layer, and forming an active layer and a second conductivity type semiconductor layer on the first conductivity type semiconductor layer. Provided that the light emitting device manufacturing method.
The forming of the aluminum layer may include depositing aluminum using a thermal evaporator, an e-beam evaporator, a sputtering or a laser evaporator.
The method of manufacturing the light emitting device may further include heat treating the substrate on which the aluminum layer is formed in an atmosphere of vacuum, nitrogen, or argon after forming the aluminum layer and before performing the anodization treatment.
The anodization may be performed using a solution containing phosphoric acid, oxalic acid or sulfuric acid.
Removing the remaining aluminum layer may use a solution in which phosphoric acid and chromic acid are mixed.
The step of forming the aluminum layer having a plurality of holes by performing the anodization may be a step of forming the aluminum layer having a plurality of holes by performing anodization once or a plurality of times.
The size of the hole of the aluminum layer can be adjusted by adjusting the applied voltage, the aqueous solution or the application time of the anodization treatment.

According to another aspect of the present invention, there is provided a substrate, a first conductive semiconductor layer formed on the substrate, an active layer formed on the first conductive semiconductor layer, and a second conductive semiconductor layer formed on the active layer. Provided is a light emitting device in which a first scattering semiconductor layer includes a plurality of scattering centers formed of an air layer.

Preferably, the first conductivity type semiconductor layer may include a first layer including a plurality of scattering centers formed of an air layer, and a second layer formed on the first layer.
The plurality of scattering centers formed of the air layer may be formed in the first conductivity type semiconductor layer through etching using the aluminum layer having the plurality of holes as a shadow mask.
The substrate may be made of a sapphire substrate or a SiC substrate.
The buffer layer may include a nitride or a conductive material.
The transparent electrode layer may include a metal or a metal oxide.
The metal may be Ni / Au, and the metal oxide may be ITO or ZnO.
The aluminum layer may be made of a thickness of 500nm to 3um.

delete

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that the spirit of the invention to those skilled in the art can fully convey. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, a light emitting diode 1 according to an embodiment of the present invention includes a substrate 100 as a base, and an N-type semiconductor layer 220, an active layer 240, and a P on the substrate 100. The light emitting cell 200 including the type semiconductor layer 260 is formed.

Although the light emitting diode 1 of the present embodiment includes one light emitting cell but includes a plurality of light emitting cells, the light emitting diode which can be operated by an AC power supply is also within the scope of the present invention. Meanwhile, a portion of the N-type semiconductor layer 220 is exposed upward by the formation of mesas, and an N-type electrode pad 330 is formed at the exposed portion of the light emitting cell. Although the substrate 100 is preferably made of a sapphire material, it may be made of another material such as SiC having a higher thermal conductivity than the sapphire material.

The active layer 240 is formed on a part of the N-type semiconductor layer 220 by the mesa formation and the P-type semiconductor layer 260 is formed on the active layer 240. Therefore, a part of the top surface of the N-type semiconductor layer 220 is bonded to the active layer 240, and the remaining part of the top surface is exposed to the outside. In this embodiment, a part of the N-type semiconductor layer 220 is partially removed to form the N-type electrode pad. However, the vertical type light emitting diode having the substrate below the N-type semiconductor layer 220 removed may also be used in the present invention Lt; / RTI &gt;

N-type semiconductor layer 220 may include an N-type cladding layer Al x In y Ga 1 -x- y N may have a (0≤x, y, x + y≤1 ), N -type. In addition, the P-type semiconductor layer 260 may be formed of P-type Al x In y Ga 1- xy N (0 ≦ x, y, x + y ≦ 1), and may include a P-type cladding layer. The N-type semiconductor layer 220 is formed by doping silicon (Si) as a dopant. The P-type semiconductor layer 260 may be formed by adding a dopant such as zinc (Zn) or magnesium (Mg), for example.

In particular, the N-type semiconductor layer 220 includes a plurality of scattering centers 224 made of an air layer. The scattering center 224 is composed of an air layer generated in the N-type semiconductor layer 220 by etching using an aluminum layer having a plurality of holes formed by using anodized aluminum oxide.

A plurality of scattering centers 224 formed of air layers having different refractive indices from the N-type semiconductor layer may maximize scattering effects in the N-type semiconductor layer 220. The configuration of the N-type semiconductor layer 220 will be described in more detail below.

In addition, a transparent electrode layer 320 formed of a metal or metal oxide such as Ni / Au, ITO, or ZnO is formed on an upper surface of the P-type semiconductor layer 260, and a P-type electrode pad is formed in a portion of the upper surface of the transparent electrode layer 320. 340 may be formed.

The active layer 240 is a region where electrons and holes are recombined, and includes InGaN. The light emission wavelength extracted from the light emitting cell 200 is determined according to the kind of the material of the active layer 240. The active layer 240 may be a multi-layered film in which a quantum well layer and a barrier layer are repeatedly formed. Barrier layer and the well layer may be a semiconductor layer 2-to 4 won the compounds represented by the general formula Al x In y Ga 1 -x- y N (0≤x, y, x + y≤1).

In addition, a buffer layer 210 may be interposed between the substrate 100 and the N-type semiconductor layer 220. The buffer layer 210 is used to mitigate lattice mismatch between the semiconductor layers to be formed thereon and the substrate 100. In addition, when the substrate 100 is conductive, the buffer layer 210 is formed of an insulating material or a semi-insulating material to electrically isolate the substrate 100 from the light emitting cells 200. The buffer layer 210 may be formed of a nitride such as AlN or GaN. On the other hand, when the substrate 100 is insulating like sapphire, the buffer layer 210 may be formed of a conductive material.

As briefly mentioned above, the N-type semiconductor layer 220 includes the first N-type semiconductor layer 222 and the second N-type semiconductor layer 226 thereon in order of growth. In addition, a plurality of scattering centers 224 formed of an air layer formed by etching using an anode aluminum oxide layer are provided between the first N-type semiconductor layer 222 and the second N-type semiconductor layer 226.

The scattering center 224 grows the first N-type semiconductor layer 222 and then uses an anodic aluminum oxide (AAO) process through anodizing the aluminum layer on the first N-type semiconductor layer 222. To form an aluminum layer having a plurality of holes, and etching the first N-type semiconductor layer 222 using an aluminum layer having a plurality of holes as a shadow mask to form a pattern having a plurality of grooves. By growing the second N-type semiconductor layer 226 thereon, the grooves between the patterns are formed leaving the air layer unfilled.

The scattering center 224 functions as a reflector that reflects light using the difference in refractive index by forming an air layer having a refractive index different from that of the N-type semiconductor material in the N-type semiconductor layer.

Therefore, the scattering center 224 can reduce the loss of light generated in the active layer 240 in the semiconductor layer, and the scattering center 224 causes the scattering to occur efficiently to be emitted to the outside of the light emitting diode.

Hereinafter, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described with reference to FIGS. 2 to 8.

Referring to FIG. 2, a buffer layer 210 is formed on a substrate 100, and a first N-type semiconductor layer 222 is formed on the buffer layer 210. The buffer layer 210 and the first N-type semiconductor layer 222 are preferably formed by metal organic chemical vapor deposition (MOCVD), but may be formed using a molecular beam growth (MBE) or a hydride vapor deposition (HVPE) method. Can be. In addition, the buffer layer 210 and the first N-type semiconductor layer 222 are continuously formed in the same process chamber.

In particular, the first N-type semiconductor layer 222 is a layer formed by adding Si dopant, and is formed by growing in a vertical direction on the substrate 100 on which the buffer layer 210 is formed. An N-type semiconductor layer is grown on the substrate via organometallic chemical vapor deposition (MOCVD).

Next, as shown in FIG. 3, the aluminum layer 20 is formed on the upper surface of the first N-type semiconductor layer 222.

The aluminum layer 20 is deposited to a thickness of 500 nanometers or more and 3 micrometers or less using high-definition aluminum (99.999% Al) using a known deposition method such as a thermal evaporator, an e-beam evaporator, a sputtering or a laser evaporator. After the deposition of the aluminum layer 20, heat treatment is performed at 300 to 500 ° C in an atmosphere of vacuum, nitrogen, argon or the like. Of course, the heat treatment process for the aluminum layer 20 can be omitted.

After depositing the aluminum layer 20, the plurality of holes 21 as shown in FIG. 4 using an anodic aluminum oxide (AAO) obtained by anodizing at least one time. To form an aluminum layer having. The holes 21 are formed up to the surface of the first N-type semiconductor layer 222.

Referring to the process of forming a myriad hole 21 in the aluminum layer 20 using an anodic aluminum oxide (AAO), first, the aluminum layer 20 is first anodized.

Here, the anodization treatment means that the aluminum layer 20 is deposited in an acidic solution and a bias is applied to the light emitting structure.

The acid solution may be any one selected from the group consisting of phosphoric acid, oxalic acid and sulfuric acid.

After the first anodization process, the aluminum layer 20 is oxidized from the surface to the inside by an electrochemical reaction, and bone is formed from the surface to the inside.

Next, the portion oxidized by the primary anodizing treatment is removed with a solution mixed with an etchant, for example, phosphoric acid and chromic acid. When the oxidized portion of the aluminum layer 20 is removed, the surface of the aluminum layer 20 remaining to correspond to the valleys formed during the first anodization process has a regular valley.

Afterwards, the aluminum layer remaining in the acid solution is subjected to secondary anodization to the surface of the first N-type semiconductor layer 222 at a position corresponding to the bone formed in the first anodization process as shown in FIG. 4. A plurality of holes 21 are formed.

In contrast, when the aluminum oxide layer 20 is extended to the top surface of the first N-type semiconductor layer 222 only by the first anodizing process and forms an aluminum oxide layer having regularly arranged holes 21, the above-described primary Of course, the rest of the process after the anodizing process can be omitted. Alternatively, the anodic oxidation process may be repeated three or more times by the above-described method.

FIG. 5 shows a photograph of the anodizing process for the aluminum layer 20 having the plurality of holes 21 formed by using different acidic solutions, that is, phosphoric acid, oxalic acid, and sulfuric acid, respectively. As can be seen through FIG. 5, an aluminum layer 20 having a plurality of holes 21 is formed, and the size of the holes may vary depending on the applied voltage and the acid solution.

On the other hand, the size of the hole 21 of the aluminum layer 20 can be adjusted by adjusting the applied voltage, the aqueous solution, and the application time of the anodic oxidation process. The diameter of the hole of the aluminum layer 20 may be enlarged as time passes in a state in which a bias is applied to the oxalic acid applied as an acid solution.

In this way, the aluminum layer 20 having the holes 21 serves as a shadow mask in a subsequent process.

After forming the aluminum layer 20 in which the holes 21 having the desired size are regularly arranged, the surface of the first N-type semiconductor layer 222 exposed through the hole 21 of the aluminum layer 20 is formed to have a predetermined depth. Etch it. Accordingly, the first N-type semiconductor layer 222 may be patterned to form a plurality of protrusions and grooves as shown in FIG. 6. The surface etching of the first N-type semiconductor layer 222 may be a suitable method such as dry or wet.

After removing the aluminum layer 20, grooves 224 having a size of 500 nanometers or less are regularly formed in the first N-type semiconductor layer 222 as shown in FIG. 6. The groove 224 is formed surrounded by the protrusions. The groove 224 thus formed serves as a scattering center.

Referring to FIG. 7, the second N-type semiconductor layer 226 is formed on the protrusion of the first N-type semiconductor layer 222 on which the scattering center 224 is formed. The growth of the second N-type semiconductor layer 226 is performed in the above-described process chamber by MOCVD. According to a preferred embodiment of the present invention, since the second N-type semiconductor layer 226 is made of GaN, and the groove 224 formed in the first N-type semiconductor layer 222 is sufficiently small in diameter, The 2 N-type semiconductor layer 226 is covered so that the groove 224 remains as an air layer and serves as a scattering center.

Next, in the same process chamber, the active layer 240 and the P-type semiconductor layer 260 are sequentially formed on the upper surface of the second N-type semiconductor layer 226 to form a stacked structure as shown in FIG. 8. At this time, a P-type dopant such as zinc (Zn) or magnesium (Mg) is added to the P-type semiconductor layer 260.

Next, although not shown, a process of forming a transparent electrode layer 320 (see FIG. 1) selected from Ni / Au, ITO, ZnO, and the like on the upper surface of the P-type semiconductor layer 260 and a part of the N-type semiconductor layer 220 A process of forming a mesa and a process of forming a P-type electrode pad 340 and an N-type electrode pad 330 in the exposed regions of the transparent electrode layer 320 and the N-type semiconductor layer 220 may be performed. As a result, a light emitting diode having a structure as shown in FIG. 1 can be manufactured.

Alternatively, a vertical light emitting diode in which a P-type electrode and an N-type electrode are provided up and down may be manufactured by taking a process of removing the substrate 100 from the light emitting cell.

The invention being thus described, it will be obvious that the same way may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention as defined by the appended claims.

According to the present invention, in the light emitting device, an aluminum layer is formed on the first conductive semiconductor layer through anodizing to form an aluminum layer having a plurality of holes, and an etching is performed using the aluminum layer having the plurality of holes as a shadow mask. The pattern is formed in the first conductivity type semiconductor layer, and the first conductivity type semiconductor layer is again formed thereon so that the space in the pattern remains as an air layer to perform the scattering center function.

Accordingly, light generated by the active layer is scattered by the scattering center made of the air layer having a different refractive index than the first conductivity type semiconductor layer, so that the light efficiency can be efficiently emitted to the outside.

At this time, the pattern diameter of the scattering center to be formed may be formed to a size of several micrometers, for example 500 nanometer or less. As the diameter of the pattern is sufficiently small, a plurality of scattering centers are formed in the first conductivity type semiconductor layer and the light reflection efficiency can be improved as the effect of the reflection toward the outside through the formed scattering centers is further increased.

Claims (15)

In the method of manufacturing a light emitting device formed by forming a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer therebetween on a substrate, Forming a first layer on the substrate, Forming an aluminum layer on the first layer, Performing anodization to form an aluminum layer having a plurality of holes; Forming a plurality of grooves and protrusions by patterning etching so that a part of the first layer is etched by using the aluminum layer having the plurality of holes as a shadow mask; Removing the aluminum layer remaining on the first layer; Growing a second layer on the protrusion of the first layer to form a first conductivity type semiconductor layer comprising a first layer and a second layer; Forming an active layer and a second conductive semiconductor layer on the first conductive semiconductor layer, Growing the second layer includes forming a plurality of scattering centers consisting of air layers in the grooves of the first layer. The method of claim 1, wherein the forming of the aluminum layer comprises depositing aluminum using a thermal evaporator, an e-beam evaporator, a sputtering or a laser evaporator. The method according to claim 1, after forming the aluminum layer, before performing the anodization treatment, And heat-treating the substrate on which the aluminum layer is formed in a vacuum, nitrogen, or argon atmosphere. The method of claim 1, wherein the anodization is performed using a solution containing phosphoric acid, oxalic acid, or sulfuric acid. The method of claim 1, wherein removing the remaining aluminum layer uses a solution in which phosphoric acid and chromic acid are mixed. The method of claim 1, wherein the forming of the aluminum layer in which the plurality of holes is formed by performing the anodization is a step of forming the aluminum layer in which the plurality of holes is formed by performing one or a plurality of anodization processes. Way. The method of claim 1, wherein the size of the hole of the aluminum layer is controlled by adjusting an applied voltage, an aqueous solution, or an application time of anodizing. A substrate; A first conductivity type semiconductor layer formed on the substrate and including a first layer and a second layer positioned on the first layer; An active layer formed on the first conductivity type semiconductor layer, A second conductive semiconductor layer formed on the active layer, The first layer of the first conductivity type semiconductor layer includes a plurality of scattering centers consisting of an air layer, Sides and lower surfaces of the plurality of scattering centers are formed to be covered with the first layer, and upper surfaces of the plurality of scattering centers are covered with the second layer. The plurality of scattering centers of the light emitting device having a size of 30 to 500nm. delete delete The light emitting device of claim 8, wherein the substrate is a sapphire substrate or a SiC substrate. The method of claim 8, Further comprising a buffer layer positioned between the substrate and the first conductivity type semiconductor layer, The buffer layer comprises a nitride or a conductive material. The method of claim 8, Further comprising a transparent electrode layer on the second conductive semiconductor layer, The transparent electrode layer is a light emitting device comprising a metal or a metal oxide. The light emitting device of claim 13, wherein the metal is Ni / Au, and the metal oxide is ITO or ZnO. delete
KR1020060136681A 2006-12-28 2006-12-28 Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby KR101316120B1 (en)

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Application Number Priority Date Filing Date Title
KR1020060136681A KR101316120B1 (en) 2006-12-28 2006-12-28 Fabrication method of light emitting device having scattering center using anodic aluminum oxide and light emitting device thereby
US12/518,846 US8053789B2 (en) 2006-12-28 2007-12-12 Light emitting device and fabrication method thereof
PCT/KR2007/006463 WO2008082097A1 (en) 2006-12-28 2007-12-12 Light emitting device and fabrication method thereof
US13/235,063 US8546819B2 (en) 2006-12-28 2011-09-16 Light emitting device and fabrication method thereof
US13/967,019 US8735185B2 (en) 2006-12-28 2013-08-14 Light emitting device and fabrication method thereof

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