KR101234843B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same - Google Patents
Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same Download PDFInfo
- Publication number
- KR101234843B1 KR101234843B1 KR1020080127462A KR20080127462A KR101234843B1 KR 101234843 B1 KR101234843 B1 KR 101234843B1 KR 1020080127462 A KR1020080127462 A KR 1020080127462A KR 20080127462 A KR20080127462 A KR 20080127462A KR 101234843 B1 KR101234843 B1 KR 101234843B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor device
- formula
- sealing
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 80
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 80
- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000003063 flame retardant Substances 0.000 claims abstract description 24
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 21
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims abstract description 18
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical group C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011256 inorganic filler Substances 0.000 claims abstract description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000005011 phenolic resin Substances 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- UVTGXFAWNQTDBG-UHFFFAOYSA-N [Fe].[Pb] Chemical compound [Fe].[Pb] UVTGXFAWNQTDBG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 5
- 238000001721 transfer moulding Methods 0.000 claims description 5
- SPUXJWDKFVXXBI-UHFFFAOYSA-N tris(2-tert-butylphenyl) phosphate Chemical group CC(C)(C)C1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C(C)(C)C)OC1=CC=CC=C1C(C)(C)C SPUXJWDKFVXXBI-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052736 halogen Inorganic materials 0.000 abstract description 7
- 150000002367 halogens Chemical class 0.000 abstract description 6
- 238000002485 combustion reaction Methods 0.000 abstract description 4
- 239000006227 byproduct Substances 0.000 abstract description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- -1 flame-retardant halogen Chemical class 0.000 description 8
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229920002545 silicone oil Polymers 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 150000004665 fatty acids Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 150000002903 organophosphorus compounds Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- BDHGFCVQWMDIQX-UHFFFAOYSA-N 1-ethenyl-2-methylimidazole Chemical compound CC1=NC=CN1C=C BDHGFCVQWMDIQX-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- CIPOCPJRYUFXLL-UHFFFAOYSA-N 2,3,4-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C(CN(C)C)=C1CN(C)C CIPOCPJRYUFXLL-UHFFFAOYSA-N 0.000 description 1
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004594 Masterbatch (MB) Substances 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 150000004074 biphenyls Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- IKWKJIWDLVYZIY-UHFFFAOYSA-M butyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 IKWKJIWDLVYZIY-UHFFFAOYSA-M 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- XEHUIDSUOAGHBW-UHFFFAOYSA-N chromium;pentane-2,4-dione Chemical compound [Cr].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O XEHUIDSUOAGHBW-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- RGBIPJJZHWFFGE-UHFFFAOYSA-N cyclohexa-2,5-diene-1,4-dione;triphenylphosphane Chemical class O=C1C=CC(=O)C=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RGBIPJJZHWFFGE-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- IMHDGJOMLMDPJN-UHFFFAOYSA-N dihydroxybiphenyl Natural products OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AVGTYNJIWPQPIH-UHFFFAOYSA-N hexan-1-amine;trifluoroborane Chemical compound FB(F)F.CCCCCCN AVGTYNJIWPQPIH-UHFFFAOYSA-N 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012796 inorganic flame retardant Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical class [H]C([H])([H])* 0.000 description 1
- VSWALKINGSNVAR-UHFFFAOYSA-N naphthalen-1-ol;phenol Chemical compound OC1=CC=CC=C1.C1=CC=C2C(O)=CC=CC2=C1 VSWALKINGSNVAR-UHFFFAOYSA-N 0.000 description 1
- ZCIJAGHWGVCOHJ-UHFFFAOYSA-N naphthalene phenol Chemical compound C1(=CC=CC=C1)O.C1(=CC=CC=C1)O.C1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)O ZCIJAGHWGVCOHJ-UHFFFAOYSA-N 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 235000019809 paraffin wax Nutrition 0.000 description 1
- 235000019271 petrolatum Nutrition 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 235000001892 vitamin D2 Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
- C08K5/52—Phosphorus bound to oxygen only
- C08K5/527—Cyclic esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 에폭시수지, 경화제, 경화촉진제, 무기 충전제 및 난연제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제로 화학식 1로 표시되는 트리페닐포스페이트(triphenylphosphate)를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로 본 발명의 에폭시 수지 조성물은 연소 시 인체 및 환경에 유해한 부산물을 발생시키는 할로겐계, 삼산화 안티몬 등의 난연제를 사용하지 않고서도 우수한 난연성을 달성할 수 있으며 성형성 및 신뢰성도 우수한 에폭시 수지 조성물을 제공할 수 있다.The present invention relates to an epoxy resin composition for sealing semiconductor devices, and more particularly, to an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a flame retardant, wherein the flame retardant is triphenylphosphate represented by the formula (1). (Triphenylphosphate) relates to an epoxy resin composition for sealing a semiconductor device, characterized in that the use of the epoxy resin composition of the present invention without the use of flame retardants such as halogen-based, antimony trioxide, which generates by-products harmful to humans and the environment during combustion It is also possible to achieve excellent flame retardancy and to provide an epoxy resin composition having excellent moldability and reliability.
트리페닐포스페이트, 난연성, 성형성, 신뢰성 Triphenyl Phosphate, Flame Retardant, Formability, Reliability
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 할로겐계, 삼산화 안티몬 등의 난연제를 사용하지 않으면서도 우수한 난연성을 나타내는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자에 관한 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor devices, and more particularly, to an epoxy resin composition for sealing semiconductor devices and a semiconductor device using the same without flame retardants such as halogen-based and antimony trioxide. .
일반적으로 반도체 소자 밀봉용 에폭시 수지를 제조함에 있어서 난연성이 필요하며 대부분의 반도체 업체에서 UL-94 V-0를 난연성으로 요구하고 있다. 이러한 난연성을 확보하기 위해 난연제를 사용하여 반도체 밀봉용 에폭시 수지를 제조하고 있으며 주로 브롬이나 염소계의 할로겐계 난연제와 이것과 함께 사용되어 난연 상승 효과를 나타내는 삼산화안티몬 등을 난연 보조제로 많이 사용하고 있다. 이러한 할로겐계 난연제를 사용하여 난연성을 확보한 반도체 밀봉용 에폭시 수지의 경우 소각 시나 화재 시 다이옥신(dioxin)이나 다이퓨란(difuran) 등의 유독성 발암물질이 발생되는 것으로 알려져 있다. 또한, 할로겐계 난연제의 경우 연소 시 발생하는 가스로 인해 인체에 유독하며 반도체 칩(chip), 와이어(wire), 또는 리드 프레임(lead frame)의 부식(corrosion)을 발생시키는 주요한 원인으로 작용하는 점 등의 문제점이 있었다. In general, flame retardancy is required in manufacturing an epoxy resin for semiconductor device sealing, and most semiconductor companies require UL-94 V-0 as flame retardant. In order to secure such flame retardancy, a flame retardant is used to manufacture an epoxy resin for sealing a semiconductor, and bromine or chlorine-based halogen-based flame retardants and antimony trioxide, which are used together with the flame retardant synergistic effect, are frequently used as flame retardant aids. In the case of an epoxy resin for sealing semiconductors using flame-retardant halogen-based flame retardant, it is known that toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, halogen-based flame retardants are toxic to the human body due to the gases generated during combustion, and act as a major cause of corrosion of semiconductor chips, wires, or lead frames. There was a problem.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 연소 시 인체 및 환경에 유해한 부산물을 발생시키는 할로겐계, 삼산화 안티몬 등의 난연제를 사용하지 않고서도 우수한 난연성을 달성할 수 있으며 성형성 및 신뢰성도 우수한 에폭시 수지 조성물 및 이를 이용한 반도체 소자를 제공하고자 한다.The present invention is to solve the problems of the prior art as described above, it is possible to achieve excellent flame retardancy without using a flame retardant, such as halogen-based, antimony trioxide, which generates by-products harmful to humans and the environment during combustion. An epoxy resin composition having excellent reliability and a semiconductor device using the same are provided.
그러므로 본 발명에 의하면, 에폭시수지, 경화제, 경화촉진제, 무기 충전제 및 난연제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제로 하기 화학식 1로 표시되는 트리페닐포스페이트(triphenylphosphate)를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물이 제공된다.Therefore, according to the present invention, in the epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a flame retardant, a triphenylphosphate represented by the following formula (1) is used as the flame retardant. An epoxy resin composition for sealing an element is provided.
(상기 식에서, R1 내지 R3는 각각 독립적으로 수소 또는 탄소 수 1 내지 4의 알킬기이다.)(Wherein R 1 to R 3 are each independently hydrogen or an alkyl group having 1 to 4 carbon atoms.)
상기 트리페닐포스페이트가 하기 화학식 2로 표시되는 트리(t-부틸-페닐)포스페이트(tri(tert-butyl-phenyl)phosphate)인 것을 특징으로 한다.The triphenyl phosphate is characterized in that the tri (t-butyl-phenyl) phosphate (tri (tert-butyl-phenyl) phosphate) represented by the following formula (2).
상기 트리페닐포스페이트가 전체 에폭시 수지 조성물에 대하여 0.1 ~ 10 중량%로 사용되는 것을 특징으로 한다.The triphenyl phosphate is characterized in that used in 0.1 to 10% by weight based on the total epoxy resin composition.
상기 에폭시수지로 하기 화학식 3으로 표시되는 페놀아랄킬형 에폭시수지를 사용하는 것을 특징으로 한다.It is characterized by using a phenol aralkyl type epoxy resin represented by the following formula (3) as the epoxy resin.
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 페놀아랄킬형 에폭시수지가 전체 에폭시수지에 대하여 50 ~ 100 중량%로 사용되는 것을 특징으로 한다.The phenol aralkyl type epoxy resin is characterized in that it is used in 50 to 100% by weight based on the total epoxy resin.
상기 경화제로 하기 화학식 4로 표시되는 페놀아랄킬형 페놀수지를 사용하는 것을 특징으로 한다.It is characterized by using a phenol aralkyl type phenol resin represented by the following formula (4) as the curing agent.
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 페놀아랄킬형 페놀수지가 전체 경화제에 대하여 30 ~ 100 중량%로 사용되는 것을 특징으로 한다.The phenol aralkyl type phenol resin is characterized in that it is used in 30 to 100% by weight based on the total curing agent.
상기 무기 충전제로 평균 입경 5 ~ 30㎛의 구상용융실리카를 50 ~ 99 중량%, 평균입경 0.001 ~ 1㎛의 구상용융실리카를 1 ~ 50 중량% 포함한 용융실리카 혼합물을 전체 충전제에 대하여 40 ~ 100 중량%가 되도록 사용하는 것을 특징으로 한다. 50 to 99 wt% of spherical molten silica having an average particle diameter of 5 to 30 μm and 1 to 50 wt% of spherical molten silica having an average particle diameter of 0.001 to 1 μm as the inorganic filler, based on 40 to 100 wt% of the total filler It is characterized by using to be%.
또한, 본 발명은 상기 에폭시 수지 조성물을 헨셀 믹서 또는 뢰디게 믹서 또는 슈퍼 믹서를 이용하여 혼합한 뒤, 롤밀 또는 니이더로 용융 혼련한 후, 냉각, 분쇄 과정을 거쳐 얻은 최종 분말 제품으로 밀봉한 반도체 소자를 제공한다.In addition, the present invention is a semiconductor that is mixed with the epoxy resin composition using a Henschel mixer or a Lodige mixer or a super mixer, melt kneaded with a roll mill or kneader, and then sealed and sealed with a final powder product obtained by cooling and grinding. Provided is an element.
상기 최종 분말 제품을 저압 트랜스퍼 성형법 또는 인젝션 성형법 또는 캐스팅 성형법으로 밀봉한 것을 특징으로 한다.The final powder product is sealed by a low pressure transfer molding method, an injection molding method or a casting molding method.
상기 반도체 소자가 동계 리드프레임, 철계 리드프레임, 동계 또는 철계 리드프레임에 니켈과 팔라듐을 포함하는 물질로 사전 도금된 리드프레임, 및 유기계 라미네이트 프레임 중에서 선택되는 리드프레임을 포함하는 것을 특징으로 한다.The semiconductor device may include a lead frame selected from a copper lead frame, an iron lead frame, a lead frame pre-plated with a material containing nickel and palladium in the copper or iron lead frame, and an organic laminate frame.
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물은 난연 특성이 우수하고, 성형성 및 신뢰도가 우수한 반도체 소자를 제작하는 데에 유용하다.The epoxy resin composition for semiconductor element encapsulation of the present invention is useful for producing a semiconductor element excellent in flame retardant properties, and excellent in moldability and reliability.
이하 본 발명을 상세히 설명하고자 한다.Hereinafter, the present invention will be described in detail.
본 발명은 에폭시수지, 경화제, 경화촉진제, 무기 충전제 및 난연제를 포함하는 에폭시 수지 조성물에 있어서, 상기 난연제로 하기 화학식 1로 표시되는 트리페닐포스페이트(triphenylphosphate)를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자를 제공한다.In the epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a flame retardant, a triphenyl phosphate represented by the following formula (1) is used as the flame retardant for sealing a semiconductor device. An epoxy resin composition and a semiconductor device using the same are provided.
[화학식 1] [Formula 1]
(상기 식에서, R1 내지 R3는 각각 독립적으로 수소 또는 탄소 수 1 내지 4의 알킬기이다.)(Wherein R 1 to R 3 are each independently hydrogen or an alkyl group having 1 to 4 carbon atoms.)
상기 트리페닐포스페이트는 열적, 화학적으로 매우 안정한 구조로서 고온의 열이 가해질 경우 해로운 가스를 발생하지 않으며, 분해되면서 물 분자를 방출하게 되므로 난연 효과를 나타내게 된다.The triphenyl phosphate is a thermally and chemically very stable structure and does not generate harmful gas when high temperature heat is applied thereto, and thus releases water molecules as it decomposes, thereby exhibiting a flame retardant effect.
상기 트리페닐포스페이트가 하기 화학식 2로 표시되는 트리(t-부틸-페닐)포스페이트(tri-(tert-butyl-phenyl)-phosphate)인 것이 가장 바람직하다.It is most preferable that the triphenyl phosphate is tri- (tert-butyl-phenyl) -phosphate represented by the following formula (2).
[화학식 2][Formula 2]
상기 트리페닐포스페이트는 수지 조성물의 유동성, 반도체 소자의 난연성, 성형성, 수지 조성물의 기계적 강도, 및 신뢰성 측면에서 전체 에폭시 수지 조성물에 대하여 0.1 ~ 10 중량%로 사용하는 것이 바람직하고, 0.2 ~ 5 중량%로 사용하는 것이 보다 바람직하며, 0.5 ~ 3 중량%로 사용하는 것이 가장 바람직하다.The triphenyl phosphate is preferably used in an amount of 0.1 to 10% by weight based on the total epoxy resin composition in terms of fluidity of the resin composition, flame retardancy of the semiconductor device, moldability, mechanical strength, and reliability of the resin composition, and 0.2 to 5% by weight. It is more preferable to use in%, it is most preferable to use in 0.5 to 3% by weight.
상기 트리페닐포스페이트는 에폭시 수지 조성물 제조 시에 단독으로 투입하여 사용할 수 있으며, 균일한 분산을 위해 에폭시 수지 조성물 제조 전에 멜트마스터배치(Melt Master Batch; MMB)와 같은 방법을 통하여 에폭시수지 또는 경화제의 용융물에 미리 녹여 분산한 후 조성물에 투입하여 사용할 수도 있다. The triphenyl phosphate may be used alone when the epoxy resin composition is prepared, and the melt of the epoxy resin or the curing agent through a method such as a melt master batch (MBM) before preparing the epoxy resin composition for uniform dispersion. After dissolving in advance and dispersing, it may be added to the composition to be used.
본 발명의 에폭시수지로는 반도체 밀봉용으로 일반적으로 사용되는 에폭시수지라면 특별히 제한되는 것은 아니며, 분자 중에 2개 이상의 에폭시기를 함유하는 에폭시 화합물인 것이 바람직하다. 이와 같은 에폭시수지로는 페놀 또는 알킬 페놀류와 히드록시벤즈알데히드와의 축합물을 에폭시화함으로써 얻어지는 에폭시수지, 페놀노볼락형 에폭시수지, 크레졸노볼락형 에폭시수지, 페놀아랄킬형 에폭시수지, 바이페닐(biphenyl)형 에폭시수지, 다관능형 에폭시수지, 나프톨노볼락형 에폭시수지, 비스페놀Ａ/비스페놀F/비스페놀AD의 노볼락형 에폭시수지, 비스페놀Ａ/비스페놀F/비스페놀AD의 글리시딜에테르, 비스히드록시비페닐계 에폭시수지, 디시클로펜타디엔계 에폭시수지, 나프탈렌계 에폭시수지 등을 들 수 있다. 특히 바람직한 에폭시수지로서 하기 화학식 3으로 표시되는, 분자 중에 바이페닐 유도체를 포함하는 노볼락 구조의 페놀아랄킬형 에폭시수지를 들 수 있다. 이들 에폭시수지는 단독 혹 은 병용하여 사용될 수 있으며, 에폭시수지에 경화제, 경화촉진제, 반응 조절제, 이형제, 커플링제, 응력완화제 등의 기타 성분과 멜트마스터배치와 같은 선 반응을 시켜 만든 부가 화합물도 사용할 수 있다. 또한 내습 신뢰성 향상을 위해 이러한 에폭시수지 중에 함유된 염소 이온, 나트륨 이온, 및 그 밖의 이온성 불순물이 낮은 것을 사용한 것이 바람직하다. 사용량은 전체 에폭시 수지 조성물에 대하여 2 ~ 15 중량%가 바람직하며, 3 ~ 12 중량%가 보다 바람직하다.The epoxy resin of the present invention is not particularly limited as long as it is an epoxy resin generally used for semiconductor sealing, and is preferably an epoxy compound containing two or more epoxy groups in a molecule. Such epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolak type epoxy resins, cresol novolak type epoxy resins, phenol aralkyl type epoxy resins, and biphenyls. ) Epoxy resin, polyfunctional epoxy resin, naphthol novolac epoxy resin, novolak epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxybi And phenyl epoxy resins, dicyclopentadiene epoxy resins and naphthalene epoxy resins. As an especially preferable epoxy resin, the phenol aralkyl type epoxy resin of the novolak structure which contains a biphenyl derivative in a molecule | numerator represented by following General formula (3) is mentioned. These epoxy resins may be used alone or in combination, and additive compounds made by preliminary reactions such as melt master batches with other components such as hardeners, curing accelerators, reaction regulators, mold release agents, coupling agents, and stress relaxers may also be used. Can be. In addition, it is preferable to use those having low chlorine ions, sodium ions, and other ionic impurities contained in such epoxy resins to improve the moisture resistance reliability. 2-15 weight% is preferable with respect to the whole epoxy resin composition, and, as for the usage-amount, 3-12 weight% is more preferable.
[화학식 3](3)
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 화학식 3의 페놀아랄킬형 에폭시수지는 페놀 골격을 바탕으로 하면서 중간에 바이페닐을 가지고 있는 구조를 형성하여 흡습성, 인성, 내산화성, 및 내크랙성이 우수하며, 가교 밀도가 낮아서 고온에서 연소 시 탄소층(char)을 형성하면서 그 자체로도 어느 정도 수준의 난연성을 확보할 수 있는 장점이 있다. 상기 페놀아랄킬형 에폭시수지는 전체 에폭시수지에 대하여 50 ~ 100 중량%로 사용되는 것이 바람직하다.The phenol aralkyl type epoxy resin of Chemical Formula 3 forms a structure having a biphenyl in the middle based on a phenol skeleton, and thus has excellent hygroscopicity, toughness, oxidation resistance, and crack resistance, and has a low crosslinking density, so when burning at high temperature While forming a carbon layer (char), there is an advantage in that it can secure a certain level of flame retardancy in itself. The phenol aralkyl type epoxy resin is preferably used in 50 to 100% by weight based on the total epoxy resin.
본 발명의 경화제는 반도체 밀봉용으로 일반적으로 사용되는 것으로 2개 이상의 반응기를 가진 것이라면 특별히 한정되지 않으며 구체적으로는 페놀아랄킬형 페놀수지, 페놀노볼락형 페놀수지, 자일록형 페놀수지, 크레졸노볼락형 페놀수지, 나프톨형 페놀수지, 테르펜형 페놀수지, 다관능형 페놀수지, 디시클로펜타디엔계 페놀수지, 나프탈렌계 페놀수지, 비스페놀 A와 레졸로부터 합성된 노볼락형 페놀수지, 트리스(하이드록시페닐)메탄, 디하이드록시바이페닐을 포함하는 다가 페놀 화합물, 무수 말레인산 및 무수 프탈산을 포함하는 산무수물, 메타페닐렌디아민, 디아미노이페닐메탄, 디아미노이페닐설폰 등의 방향족 아민 등을 들 수 있다. 특히 바람직한 경화제로는 하기 화학식 4로 표시되는, 분자 중에 바이페닐 유도체를 포함하는 노볼락 구조의 페놀아랄킬형 페놀수지를 들 수 있다. 이들 경화제는 단독 혹은 병용하여 사용될 수 있으며, 경화제에 에폭시수지, 경화촉진제, 반응 조절제, 이형제, 커플링제, 응력완화제 등의 기타 성분과 멜트마스터배치와 같은 선 반응을 시켜 만든 부가 화합물로도 사용할 수 있다. 사용량은 전체 에폭시 수지 조성물에 대하여 0.5 ~ 12 중량%가 바람직하며, 1 ~ 8 중량%가 보다 바람직하다. 상기 에폭시수지와 경화제와의 배합비는 패키지에서의 기계적 성질 및 내습 신뢰성의 요구에 따라 경화제에 대한 에폭시수지의 화학 당량비가 0.5 ~ 2인 것이 바람직하며, 0.8 ~ 1.6 범위에서 사용하는 것이 보다 바람직하다.The curing agent of the present invention is generally used for semiconductor sealing and is not particularly limited as long as it has two or more reactors. Specifically, a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a xylock type phenol resin, and a cresol novolak type Phenolic resin, naphthol phenol resin, terpene phenol resin, polyfunctional phenol resin, dicyclopentadiene phenol resin, naphthalene phenol resin, novolac phenol resin synthesized from bisphenol A and resol, tris (hydroxyphenyl) Polyhydric phenol compounds containing methane, dihydroxybiphenyl, acid anhydrides containing maleic anhydride and phthalic anhydride, aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, and the like. As a particularly preferable hardening | curing agent, the phenol aralkyl type phenol resin of the novolak structure which contains a biphenyl derivative in a molecule | numerator represented by following formula (4) is mentioned. These curing agents may be used alone or in combination, and may also be used as additive compounds made by preliminary reactions such as melt master batches with other components such as epoxy resins, curing accelerators, reaction control agents, mold release agents, coupling agents, stress relief agents and the like. have. 0.5-12 weight% is preferable with respect to the total epoxy resin composition, and, as for the usage-amount, 1-8 weight% is more preferable. The compounding ratio of the epoxy resin and the curing agent is preferably a chemical equivalent ratio of the epoxy resin to the curing agent is 0.5 to 2, more preferably 0.8 to 1.6, depending on the mechanical properties and moisture resistance reliability of the package.
[화학식 4][Formula 4]
(상기 식에서, n의 평균치는 1 내지 7이다.)(In the above formula, the average value of n is 1 to 7.)
상기 화학식 4의 페놀아랄킬형 페놀수지는 고온에서 연소 시 탄소층을 형성하여 주변의 열 및 산소의 전달을 차단함으로써 난연성을 달성하게 되므로 바람직하다. 상기 페놀아랄킬형 페놀수지는 전체 경화제에 대하여 30 ~ 100 중량%로 사용되는 것이 바람직하다.Phenol aralkyl type phenolic resin of the formula (4) is preferable because it forms a carbon layer during combustion at high temperature to block the transfer of heat and oxygen around the flame retardancy is achieved. The phenol aralkyl type phenol resin is preferably used at 30 to 100% by weight based on the total curing agent.
본 발명에 사용되는 경화촉진제는 에폭시수지와 경화제의 반응을 촉진하는 물질이다. 예를 들면, 제 3급아민, 유기금속화합물, 유기인화합물, 이미다졸, 붕소화합물 등이 사용 가능하다. 제 3급 아민에는 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디에틸아미노에탄올, 트리(디메틸아미노메틸)페놀, 2-2-(디메틸아미노메틸)페놀, 2,4,6-트리스(디아미노메틸)페놀과 트리-2-에틸헥실 에시드의 염 등이 있다. 유기 금속화합물에는 크로뮴아세틸아세토네이트, 징크아세틸아세토네이트, 니켈아세틸아세토네이트 등이 있다. 유기인화합물에는 트리스-4-메톡시포스핀, 테트라부틸포스포늄브로마이드, 부틸트리페닐포스포늄브로마이드, 페닐포스핀, 디페닐포스핀, 트리페닐포스핀, 트리페닐포스핀트리페닐보란, 트리페닐포스핀-1,4-벤 조퀴논 부가물 등이 있다. 이미다졸류에는 2-메틸이미다졸, 2-페닐이미다졸, 2-아미노이미다졸, 2메틸-1-비닐이미다졸, 2-에틸-4-메틸이미다졸, 2-헵타데실이미다졸 등이 있다. 붕소화합물에는 테트라페닐포스포늄-테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염, 트리플루오로보란-n-헥실아민, 트리플루오로보란모노에틸아민, 테트라플루오로보란트리에틸아민, 테트라플루오로보란아민 등이 있다. 이외에도 1,,5-디아자바이시클로[4.3.0]논-5-엔(1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-디아자바이시클로[5.4.0]운덱-7-엔(1,8-diazabicyclo[5.4.0]undec-7-ene: DBU) 및 페놀노볼락 수지염 등을 사용할 수 있다. 특히 바람직한 경화촉진제로는 유기인화합물, 또는 아민계, 또는 이미다졸계 경화촉진제를 단독 혹은 혼합하여 사용하는 것을 들 수 있다. 상기 경화촉진제는 에폭시수지 또는 경화제와 선 반응하여 만든 부가물을 사용하는 것도 가능하다. 본 발명에서 사용되는 경화촉진제의 배합량은 전체 에폭시 수지 조성물에 대하여 0.001 ~ 1.5 중량%가 바람직하며, 0.01 ~ 1 중량%가 보다 바람직하다. The curing accelerator used in the present invention is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organophosphorus compounds, imidazoles, boron compounds and the like can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diamino Salts of methyl) phenol and tri-2-ethylhexyl acid, and the like. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, butyltriphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenyl Phosphine-1,4-benzoquinone adducts and the like. The imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-heptadecyl. Midazoles and the like. Boron compounds include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroboranetriethylamine And tetrafluoroboraneamine. In addition, 1,5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8- diazabicyclo [5.4 .0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene: DBU), phenol novolak resin salts, and the like. Particularly preferred curing accelerators include organophosphorus compounds, amine-based or imidazole-based curing accelerators used alone or in combination. The curing accelerator may use an epoxy resin or an adduct made by linear reaction with a curing agent. As for the compounding quantity of the hardening accelerator used by this invention, 0.001-1.5 weight% is preferable with respect to the whole epoxy resin composition, and 0.01-1 weight% is more preferable.
본 발명에 사용되는 무기 충전제는 에폭시 수지 조성물의 기계적 물성의 향상과 저 응력화를 위하여 사용되는 물질이다. 일반적으로 사용되는 예로서는 용융실리카, 결정성 실리카, 탄산칼슘, 탄산마그네슘, 알루미나, 마그네시아, 클레이, 탈크, 규산칼슘, 산화티탄, 산화안티몬, 유리섬유 등을 들 수 있다. 저응력화를 위해서는 선평창계수가 낮은 용융실리카를 사용하는 것이 바람직하다. 상기 용융실리카는 진비중이 2.3 이하인 비결정성 실리카를 의미하는 것으로 결정성 실리카를 용 융하여 만들거나 다양한 원료로부터 합성한 비결정성 실리카도 포함된다. 용융실리카의 형상 및 입경은 특별히 한정되지는 않지만, 평균 입경 5 ~ 30㎛의 구상용융실리카를 50 ~ 99 중량%, 평균입경 0.001 ~ 1㎛의 구상용융실리카를 1 ~ 50 중량%를 포함한 용융실리카 혼합물을 전체 충전제에 대하여 40 ~ 100 중량%가 되도록 포함하는 것이 좋다. 또한, 용도에 맞춰 그 최대 입경을 45㎛, 55㎛, 및 75㎛ 등으로 조정해서 사용할 수가 있다. 용융 구상 실리카에는 도전성의 카본이 실리카 표면에 이물로서 포함되는 경우가 있으나 극력 이물의 혼입이 적은 물질을 선택하는 것도 중요하다. 본 발명에서 무기 충전제의 비율은 성형성, 저응력성, 고온강도 등의 요구 물성에 따라 다르지만, 전체 에폭시 수지 조성물에 대하여 70 ~ 95 중량%로 사용하는 것이 바람직하며, 80 ~ 92 중량% 비율로 사용하는 것이 더욱 바람직하다.The inorganic filler used in the present invention is a material used for improving the mechanical properties of the epoxy resin composition and reducing the stress. Examples generally used include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fibers and the like. In order to reduce the stress, it is preferable to use molten silica having a low linear window coefficient. The fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and also includes amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the molten silica are not particularly limited, but the molten silica includes 50 to 99% by weight of spherical molten silica having an average particle diameter of 5 to 30 µm and 1 to 50% by weight of spherical molten silica having an average particle diameter of 0.001 to 1 µm. It is preferred to include the mixture in an amount of 40 to 100% by weight based on the total filler. Moreover, according to a use, the maximum particle diameter can be adjusted to 45 micrometers, 55 micrometers, 75 micrometers, etc., and can be used. In fused spherical silica, conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material with little foreign matter mixing. In the present invention, the ratio of the inorganic filler depends on the required physical properties such as formability, low stress, high temperature strength, etc., but is preferably used in an amount of 70 to 95% by weight based on the total epoxy resin composition, and the ratio of 80 to 92% by weight. It is more preferable to use.
또한, 본 발명의 에폭시 수지 조성물은 본 발명의 목적을 해하지 않는 범위에서 고급 지방산, 고급 지방산 금속염, 천연 지방산, 파라핀계 왁스, 에틸렌계 왁스, 에스테르계 왁스 등의 이형제, 카본블랙, 유기염료, 무기염료 등의 착색제, 에폭시실란, 아미노실란, 머캡토실란, 알킬실란, 알콕시실란 등의 커플링제 및 변성 실리콘 오일, 실리콘 파우더, 실리콘 레진 등의 응력완화제 등을 필요에 따라 함유할 수 있다. 이때, 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며, 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복시 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대하여 0.01 내지 2 중량%로 사용할 수 있다. 또한, 붕산아연, 수산화 알루미늄, 수산화마그네슘 등의 유, 무기 난연제를 필요에 따라 추가로 함유할 수 있다.In addition, the epoxy resin composition of the present invention is a release agent such as higher fatty acids, higher fatty acid metal salts, natural fatty acids, paraffin waxes, ethylene waxes, ester waxes, carbon black, organic dyes, and inorganics within the scope of not impairing the object of the present invention. Colorants such as dyes, epoxysilanes, aminosilanes, coupling agents such as mercaptosilanes, alkylsilanes and alkoxysilanes, and stress relieving agents such as modified silicone oils, silicone powders and silicone resins may be contained as necessary. At this time, the modified silicone oil is preferably a silicone polymer excellent in heat resistance, a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like, or a mixture of two or more kinds thereof to the entire epoxy resin composition. It can be used in 0.01 to 2% by weight relative to the. Furthermore, oil and inorganic flame retardants, such as zinc borate, aluminum hydroxide, and magnesium hydroxide, can be further contained as needed.
이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀 믹서 또는 뢰디게 믹서 또는 슈퍼 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀 또는 니이더로 용융 혼련한 후, 냉각, 분쇄 과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다. 본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형이 가능하다. 상기 방법에 의해 동계 리드 프레임, 철계 리드 프레임, 동계 또는 철계 리드 프레임에 니켈과 팔라듐을 포함하는 물질로 사전 도금된 리드 프레임, 및 유기계 라미네이트 프레임 중에서 선택되는 리드 프레임을 포함하는 반도체 소자를 제조할 수 있다. As a general method for producing an epoxy resin composition using the above raw materials, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rödige mixer or a super mixer, followed by melt kneading with a roll mill or a kneader, Cooling and grinding are used to obtain the final powder product. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, the low pressure transfer molding method is most commonly used, and molding can also be carried out by a method such as injection molding or casting. By the above method, a semiconductor device including a lead frame selected from a copper lead frame, an iron lead frame, a lead frame pre-plated with a material containing nickel and palladium in the copper or iron lead frame, and an organic laminate frame can be manufactured. have.
다음에 본 발명을 실시예에 의거 더욱 상세히 설명하나, 실시예에 의하여 본 발명이 한정되는 것은 아니다. Next, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by Examples.
[실시예 1 내지 2, 비교예 1 내지 2][Examples 1-2, Comparative Examples 1-2]
다음 표 1의 조성에 따라 슈퍼 믹서를 이용하여 균일하게 혼합한 후, 연속 니이더를 이용하여 100 ~ 120℃ 범위에서 용융 혼련 후 냉각, 분쇄하여 반도체 밀 봉용 에폭시 수지 조성물을 제조하였다. 각종 물성은 다음의 방법에 의해 평가하였다. 평가 결과를 표 2에 나타내었다.Next, after mixing uniformly using a super mixer according to the composition of Table 1, by using a continuous kneader in the melt kneading in the range of 100 ~ 120 ℃ cooled and pulverized to prepare an epoxy resin composition for semiconductor sealing. Various physical properties were evaluated by the following method. The evaluation results are shown in Table 2.
(유동성/스파이럴플로우): EMMI-1-66에 준하여 평가용 금형을 사용하여 175℃, 70Kgf/cm2에서 트랜스퍼 몰딩 프레스를 이용하여 유동 길이를 측정하였다. 측정값이 높을수록 유동성이 우수한 것이다.(Fluidity / spiral flow): The flow length was measured using the transfer molding press at 175 degreeC and 70 Kgf / cm < 2 > using the evaluation mold according to EMMI-1-66. The higher the measured value, the better the fluidity.
(유리전이온도(Tg)): TMA(Thermomechanical Analyzer)로 평가하였다.(Glass Transition Temperature (Tg)): Evaluated by TMA (Thermomechanical Analyzer).
(굴곡강도 및 굴곡탄성율): ASTM D-790에 준하여 표준시편(125×12.6×6.4 mm)을 만든 후 175℃에서 6시간 경화시킨 이후에 UTM(Universal Testing Machine)을 이용하여 35℃에서 측정하였다.(Bending Strength and Flexural Modulus): Standard specimens (125 × 12.6 × 6.4 mm) were made according to ASTM D-790 and then cured at 175 ° C. for 6 hours, and then measured at 35 ° C. using a UTM (Universal Testing Machine). .
(난연성): UL 94 V-0 규격에 준하여 1/8인치 두께를 기준으로 평가하였다.(Flame retardance): Based on the UL 94 V-0 standard was evaluated based on 1/8 inch thickness.
(성형성): 표 1의 에폭시 수지 조성물로 MPS(Multi Plunger System) 성형기를 이용하여 175℃에서 80초간 트랜스퍼 몰딩으로 성형시켜 44-SOP(Small Out-line Package) (12.6mm×28.5mm×2.8mm) 패키지를 제작하였다. 175℃에서 6시간 동안 후경화(PMC; post mold cure)시킨 이후 상온으로 냉각하였다. 이후, 육안으로 패키지 표면에 관찰되는 보이드(void)의 개수를 측정하였다.(Forming): 44-SOP (Small Out-line Package) (12.6 mm x 28.5 mm x 2.8) by molding with an epoxy resin composition shown in Table 1 using MPS (Multi Plunger System) molding machine by transfer molding at 175 ° C. for 80 seconds. mm) a package was produced. After curing at 175 ° C for 6 hours (PMC; post mold cure) and cooled to room temperature. Then, the number of voids observed on the package surface was visually measured.
(신뢰성): 상기 성형성 평가를 마친 44-SOP 패키지를 125℃에서 24시간 건조시킨 후, 5 사이클(1 사이클은 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 의미함)의 열충격 시험을 수행하였다. 이후, 상기 패키지를 PCT(Pressure Cooker Test) 설비 내에서 121℃, 100% 상대습도 조건 하에서 96시간 동안 방치한 후, 전기특성 평가를 진행한 후 불량 패키지에 대하여 디캡(Decap)하여 칩 부식 여부를 관찰하였다.(Reliability): After drying the 44-SOP package after the evaluation of the moldability for 24 hours at 125 ℃, 5 cycles (one cycle 10 minutes at -65 ℃, 5 minutes at 25 ℃, 10 minutes at 150 ℃ Thermal shock test). Thereafter, the package is left in a PCT (Pressure Cooker Test) facility at 121 ° C. under 100% relative humidity for 96 hours, and then subjected to electrical characteristics evaluation to decap the defective package to determine chip corrosion. Observed.
(단위:중량%)(Unit: weight%)
(주)(week)
1) NC-3000, Nippon Kayaku1) NC-3000, Nippon Kayaku
2) EOCN-1020-55, Nippon Kayaku2) EOCN-1020-55, Nippon Kayaku
3) MEH-7851S, Meiwa kasei3) MEH-7851S, Meiwa kasei
4) HF-1, Meiwa kasei4) HF-1, Meiwa kasei
5) YDB-400, 국도화학5) YDB-400, Kukdo Chemical
6) TPP, Hokko chemical6) TPP, Hokko chemical
7) 평균입경 18㎛의 구상 용융실리카와 평균입경 0.5㎛의 구상 용융실리카의 9:1 혼합물7) 9: 1 mixture of spherical molten silica with an average particle diameter of 18 µm and spherical molten silica with an average particle diameter of 0.5 µm
8) KBM-403, Shin Etsu silicon8) KBM-403, Shin Etsu silicon
상기 결과로부터 본 발명에 의한 에폭시 수지 조성물은 할로겐계 난연제를 사용하지 않으면서도 우수한 난연 특성을 나타내며, 패키징 시의 성형성 및 패키징 후 반도체 패키지의 신뢰도가 우수한 반도체 소자를 제작할 수 있음을 확인하였다.From the above results, it was confirmed that the epoxy resin composition according to the present invention exhibits excellent flame retardant properties without using a halogen-based flame retardant, and can produce a semiconductor device having excellent moldability during packaging and reliability of a semiconductor package after packaging.
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020080127462A KR101234843B1 (en) | 2008-12-15 | 2008-12-15 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same |
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| KR1020080127462A KR101234843B1 (en) | 2008-12-15 | 2008-12-15 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same |
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| Publication Number | Publication Date |
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| KR20100068941A KR20100068941A (en) | 2010-06-24 |
| KR101234843B1 true KR101234843B1 (en) | 2013-02-19 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11181247A (en) | 1997-12-25 | 1999-07-06 | Sumitomo Bakelite Co Ltd | Flame-retardant one-pack type epoxy resin composition |
| KR20000045208A (en) * | 1998-12-30 | 2000-07-15 | 유현식 | Epoxy resin composition for sealing semiconductor and semiconductor device |
| US6774163B2 (en) | 2002-04-16 | 2004-08-10 | Bayer Chemicals Ag | Flame retardants for polymers comprising a mixture of two different aryl phosphates, their preparation and their use |
| JP2005097352A (en) * | 2003-09-22 | 2005-04-14 | Dainippon Ink & Chem Inc | Epoxy resin composition, semiconductor sealing material, and semiconductor device |
-
2008
- 2008-12-15 KR KR1020080127462A patent/KR101234843B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11181247A (en) | 1997-12-25 | 1999-07-06 | Sumitomo Bakelite Co Ltd | Flame-retardant one-pack type epoxy resin composition |
| KR20000045208A (en) * | 1998-12-30 | 2000-07-15 | 유현식 | Epoxy resin composition for sealing semiconductor and semiconductor device |
| US6774163B2 (en) | 2002-04-16 | 2004-08-10 | Bayer Chemicals Ag | Flame retardants for polymers comprising a mixture of two different aryl phosphates, their preparation and their use |
| JP2005097352A (en) * | 2003-09-22 | 2005-04-14 | Dainippon Ink & Chem Inc | Epoxy resin composition, semiconductor sealing material, and semiconductor device |
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| Publication number | Publication date |
|---|---|
| KR20100068941A (en) | 2010-06-24 |
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