KR100882332B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same - Google Patents
Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same Download PDFInfo
- Publication number
- KR100882332B1 KR100882332B1 KR1020070139954A KR20070139954A KR100882332B1 KR 100882332 B1 KR100882332 B1 KR 100882332B1 KR 1020070139954 A KR1020070139954 A KR 1020070139954A KR 20070139954 A KR20070139954 A KR 20070139954A KR 100882332 B1 KR100882332 B1 KR 100882332B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- semiconductor device
- formula
- resin composition
- biphenyl
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 68
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 239000000203 mixture Substances 0.000 title claims abstract description 40
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000005011 phenolic resin Substances 0.000 claims abstract description 28
- 235000010290 biphenyl Nutrition 0.000 claims abstract description 27
- 239000004305 biphenyl Substances 0.000 claims abstract description 27
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- 150000002989 phenols Chemical class 0.000 claims abstract description 16
- 239000011256 inorganic filler Substances 0.000 claims abstract description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 10
- 229920003986 novolac Polymers 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 238000007789 sealing Methods 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- 239000004843 novolac epoxy resin Substances 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- UVTGXFAWNQTDBG-UHFFFAOYSA-N [Fe].[Pb] Chemical compound [Fe].[Pb] UVTGXFAWNQTDBG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000001721 transfer moulding Methods 0.000 claims description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000003063 flame retardant Substances 0.000 abstract description 20
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 14
- 238000005452 bending Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- -1 Xyloxy phenolic resin Chemical compound 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920002545 silicone oil Polymers 0.000 description 5
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 3
- 150000002903 organophosphorus compounds Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000004594 Masterbatch (MB) Substances 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000003183 carcinogenic agent Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000137 polyphosphoric acid Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- BDHGFCVQWMDIQX-UHFFFAOYSA-N 1-ethenyl-2-methylimidazole Chemical compound CC1=NC=CN1C=C BDHGFCVQWMDIQX-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- CIPOCPJRYUFXLL-UHFFFAOYSA-N 2,3,4-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C(CN(C)C)=C1CN(C)C CIPOCPJRYUFXLL-UHFFFAOYSA-N 0.000 description 1
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- IKWKJIWDLVYZIY-UHFFFAOYSA-M butyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCC)C1=CC=CC=C1 IKWKJIWDLVYZIY-UHFFFAOYSA-M 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XEHUIDSUOAGHBW-UHFFFAOYSA-N chromium;pentane-2,4-dione Chemical compound [Cr].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O XEHUIDSUOAGHBW-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- RGBIPJJZHWFFGE-UHFFFAOYSA-N cyclohexa-2,5-diene-1,4-dione;triphenylphosphane Chemical class O=C1C=CC(=O)C=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RGBIPJJZHWFFGE-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- IMHDGJOMLMDPJN-UHFFFAOYSA-N dihydroxybiphenyl Natural products OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- JDVIRCVIXCMTPU-UHFFFAOYSA-N ethanamine;trifluoroborane Chemical compound CCN.FB(F)F JDVIRCVIXCMTPU-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AVGTYNJIWPQPIH-UHFFFAOYSA-N hexan-1-amine;trifluoroborane Chemical compound FB(F)F.CCCCCCN AVGTYNJIWPQPIH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012796 inorganic flame retardant Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical class [H]C([H])([H])* 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- VSWALKINGSNVAR-UHFFFAOYSA-N naphthalen-1-ol;phenol Chemical compound OC1=CC=CC=C1.C1=CC=C2C(O)=CC=CC2=C1 VSWALKINGSNVAR-UHFFFAOYSA-N 0.000 description 1
- BMGNSKKZFQMGDH-FDGPNNRMSA-L nickel(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ni+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O BMGNSKKZFQMGDH-FDGPNNRMSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- JABYJIQOLGWMQW-UHFFFAOYSA-N undec-4-ene Chemical compound CCCCCCC=CCCC JABYJIQOLGWMQW-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자에 관한 것으로, 보다 상세하게는 패키지의 휨 특성, 성형성, 신뢰성, 및 난연 특성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 장치에 관한 것이다.The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device using the same, and more particularly, to an epoxy resin composition for sealing a semiconductor device excellent in bending property, moldability, reliability, and flame retardant properties of a package and sealing using the same. It relates to a semiconductor device.
보통 반도체 밀봉용 에폭시 수지 조성물에 있어서 모든 반도체 업체에서는 UL-94 V-0의 난연 등급을 요구하고 있다. 이러한 난연 등급을 확보하기 위하여 기존에는 할로겐화 에폭시수지를 주 난연제로 하여 보조 난연제로서 삼산화 안티몬을 혼용 사용하여 난연성을 확보하였다. 그러나 삼산화 안티몬의 경우 발암성 물질로서 인체에 매우 유해하며 또한 할로겐계 난연제를 사용한 반도체 밀봉용 에폭시 수지 조성물의 경우 소각 시나 화재 발생 시 다이옥신(dioxin)이나 다이퓨란(difuran) 등의 유독성 발암 물질이 발생되는 것으로 알려져 있고 이와 더불어 연소 시 발생하는 HBr 및 HCl 등의 가스로 인해 오존층이 파괴되는 등 환경에 치명적인 영향을 주게 된다. 이에 대한 대책으로서 포스파젠(phosphazene)이나 인산 에스테르와 같은 인계 난연제 등이 검토되고 있으나, 인계 난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리인산이 반도체의 신뢰성을 떨어뜨리는 문제가 있었다. 또한, 금속 산화물이나 수산화물은 난연 효과가 좋지 못하여 많은 양을 사용하게 됨으로써 반도체 패키징 시의 유동성 및 성형성 확보에 어려움이 있었다. In general, in semiconductor sealing epoxy resin compositions, all semiconductor companies require a flame retardant grade of UL-94 V-0. In order to secure the flame retardant grade, conventionally, halogenated epoxy resin was used as a main flame retardant, and antimony trioxide was used as a secondary flame retardant to secure flame retardancy. However, antimony trioxide is a carcinogenic substance, which is very harmful to the human body. Also, in the case of an epoxy resin composition for sealing a semiconductor using a halogen-based flame retardant, toxic carcinogens such as dioxin or difuran are generated during incineration or fire. In addition, the ozone layer is destroyed by gases such as HBr and HCl generated during combustion, and has a fatal effect on the environment. Phosphorus flame retardants such as phosphazene and phosphate esters have been studied as a countermeasure. However, in the case of phosphorus flame retardants, phosphoric acid and polyphosphoric acid formed by bonding with water have a problem of deteriorating reliability of semiconductors. In addition, since the metal oxide or the hydroxide has a poor flame retardant effect, a large amount is used, and thus, it is difficult to secure fluidity and formability during semiconductor packaging.
이에 대한 대책으로 포스파젠(Phosphazene)이나 인산 에스테르와 같은 유기 인계 난연제, 수산화 알루미늄, 수산화 마그네슘, 탈크 등의 무기 함수화 난연제, 및 질소 원소 함유 수지와 같은 신규 난연제가 검토되고 있으나, 유기 인계 난연제의 경우 수분과 결합하여 생성되는 인산 및 폴리 인산이 반도체의 신뢰성을 떨어뜨리는 문제가 있었고, 무기 함수화 난연제의 경우 반도체 패키지의 흡습이 증가하는 문제가 있었으며, 질소원소 함유 수지의 경우에도 일부 자기 소화성 난연 특성을 가지고는 있으나 반도체 회사에서 요구하는 난연 규격을 만족하기에는 난연 효과가 부족한 문제점이 있었다.As a countermeasure, organic phosphorus flame retardants such as phosphazene and phosphate esters, inorganic functional flame retardants such as aluminum hydroxide, magnesium hydroxide and talc, and novel flame retardants such as nitrogen-containing resins have been considered. Phosphoric acid and polyphosphoric acid produced by combining with water have a problem of deteriorating the reliability of semiconductors, and moisture absorption of semiconductor packages has been increased in the case of inorganic functional flame retardants, and some self-extinguishing flame retardant properties of nitrogen element-containing resins However, there was a problem that the flame retardant effect is insufficient to satisfy the flame retardant standard required by the semiconductor company.
또한, 최근 주목을 받고 있는 표면 실장형의 BGA(Ball Grid Array)형 패키지는 편면 포장 구조로 열팽창 수축의 비대칭성으로 인하여 패키지 휘어짐이 발생하기 쉽다는 문제가 있었다. 이와 마찬가지로 BOC(Board On Chip), MCP(Multi Chip Package), uLGA(Mirco Land Grid Array) 패키지와 같은 새로운 형태의 패키지에서는 상기 휨 문제가 발생할 뿐만 아니라 수지 조성물이 차지하는 부분의 두께가 백여 미크론까지 얇아지기도 하는데, 이로 인해 패키지 밀봉 시 기공이 생기거나 불완전 성형이 일어나는 등의 성형 불량이 빈번히 발생하고 있다. 또한 최근 환경에 대한 관심이 높아짐으로써, 반도체 패키지의 실장 과정에서 납을 제거한 용접 방법이 적용되고 있는데, 반도체 패키지 분야에서 사용 가능한 대부분의 용접은 종래의 납을 포함하는 용접에 비하여 융점이 높기 때문에 리플로우(Reflow) 온도가 매우 높아진다. 이로 인하여 패키지의 신뢰도가 저하되는 문제가 발생하며 이를 방지할 수 있는 내 리플로우성(reflow-resistant property)의 향상이 요구된다.In addition, the surface-mounted BGA (Ball Grid Array) type package, which has recently attracted attention, has a problem in that package warpage is likely to occur due to asymmetry of thermal expansion shrinkage due to a single-sided packaging structure. Similarly, new types of packages such as board on chip (BOC), multi chip package (MCP) and mirco land grid array (uLGA) packages not only cause the warpage problem, but also the thickness of the resin composition is thinner to 100 microns. Due to this, molding defects such as pores or incomplete molding occur frequently during package sealing. In addition, due to the recent increase in environmental concern, a solderless welding method has been applied in the process of mounting a semiconductor package. Most of the welding available in the semiconductor package field has a higher melting point than that of a conventional solder containing ripple. The reflow temperature is very high. This causes a problem that the reliability of the package is deteriorated and it is required to improve the reflow-resistant property that can prevent this.
본 발명은 상기와 같은 문제점을 해결하기 위한 것으로, 본 발명의 목적은 할로겐계 난연제를 사용하지 않고도 우수한 난연성을 나타내고, 반도체 소자 패키징 시의 성형성이 우수하며, 반도체 소자 제작 후, 패키지의 휨 특성과 신뢰성이 양호한 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 소자를 제공하는 데에 있다.The present invention is to solve the above problems, an object of the present invention is to exhibit excellent flame retardancy without using a halogen-based flame retardant, excellent moldability in packaging a semiconductor device, the bending characteristics of the package after fabrication of the semiconductor device An epoxy resin composition with good reliability and a semiconductor device sealed using the same are provided.
그러므로 본 발명에 의하면, 에폭시수지, 경화제, 경화촉진제, 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 상기 경화제로서 하기 화학식 1로 표시되는 바이페닐 함유 변성 페놀노볼락형 페놀수지를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물이 제공된다.Therefore, according to the present invention, in the epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, a biphenyl-containing modified phenol novolac type phenol resin represented by the following formula (1) is used as the curing agent. An epoxy resin composition for sealing semiconductor elements is provided.
[화학식 1][Formula 1]
(상기 식에서, m과 n의 평균치는 각각 1 내지 10이며, 상기 두 반복 단위의 순서는 화학식 1 내에서 random하게 배치될 수 있다.)(In the above formula, the average value of m and n are 1 to 10, respectively, and the order of the two repeating units may be randomly arranged in Formula 1.)
상기 바이페닐 함유 변성 페놀노볼락형 페놀수지의 수산기 당량이 100 내지 400이고, 연화점이 40 내지 120℃인 것을 특징으로 한다.The hydroxyl equivalent of the biphenyl-containing modified phenol novolak-type phenolic resin is 100 to 400, characterized in that the softening point is 40 to 120 ℃.
상기 바이페닐 함유 변성 페놀노볼락형 페놀수지가 전체 경화제에 대하여 5 내지 100 중량%로 사용되는 것을 특징으로 한다.The biphenyl-containing modified phenol novolak-type phenolic resin is characterized in that 5 to 100% by weight based on the total curing agent.
상기 경화제로 화학식 2로 표시되는 자일록형 페놀수지 또는 하기 화학식 3으로 표시되는 다관능형 페놀수지를 상기 바이페닐 함유 변성 페놀노볼락형 페놀수지와 병용하는 것을 특징으로 한다.It is characterized by using together with the said biphenyl-containing modified phenol novolak-type phenol resin which the xylolic phenol resin represented by General formula (2) or the polyfunctional type phenol resin represented by following General formula (3) as said hardening | curing agent.
[화학식 2][Formula 2]
(상기 식에서, n의 평균치는 0 내지 7이다.)(In the above formula, the average value of n is 0 to 7.)
[화학식 3][Formula 3]
(상기 식에서 n의 평균치는 1 내지 7이다.)(In the formula, the average value of n is 1 to 7.)
상기 에폭시수지로 하기 화학식 4로 표시되는 바이페닐형 에폭시수지 또는 하기 화학식 5로 표시되는 바이페닐 함유 변성 노볼락형 에폭시수지를 사용하는 것을 특징으로 한다.The epoxy resin is characterized by using a biphenyl type epoxy resin represented by the following formula (4) or a biphenyl-containing modified novolak type epoxy resin represented by the following formula (5).
[화학식 4][Formula 4]
(상기 식에서 n의 평균치는 0 내지 7이다.)(In the above formula, the average value of n is 0 to 7.)
[화학식 5][Formula 5]
(상기 식에서, m과 n의 평균치는 각각 1 내지 10이며, 상기 두 반복 단위의 순서는 화학식 5 내에서 random하게 배치될 수 있다.)(In the above formula, the average value of m and n are 1 to 10, respectively, and the order of the two repeating units may be randomly arranged in Formula 5.)
상기 바이페닐 함유 변성 노볼락형 에폭시수지의 에폭시 당량이 100 내지 400이고, 연화점이 40 내지 80℃인 것을 특징으로 한다.Epoxy equivalent of the biphenyl-containing modified novolak-type epoxy resin is 100 to 400, characterized in that the softening point is 40 to 80 ℃.
상기 무기 충전제로 평균 입경 0.1 ~ 3㎛의 구상용융실리카를 3 ~ 20 중량%, 평균 입경 3 ~ 10㎛의 구상용융실리카를 5 ~ 30 중량%, 평균 입경 10 ~ 25㎛의 구상용융실리카를 50 ~ 92 중량%를 포함한 용융실리카 혼합물을 전체 무기 충전제에 대하여 40 ~ 100 중량%가 되도록 포함하는 것을 특징으로 한다.3 to 20 wt% of spherical molten silica having an average particle diameter of 0.1 to 3 µm, 5 to 30 wt% of spherical molten silica having an average particle diameter of 3 to 10 µm, and 50 spherical molten silica having an average particle diameter of 10 to 25 µm. It characterized in that it comprises a molten silica mixture including ~ 92% by weight to 40 to 100% by weight relative to the total inorganic filler.
또한, 본 발명은 상기 에폭시 수지 조성물을 헨셀 믹서 또는 뢰디게 믹서를 이용하여 혼합한 뒤, 롤밀 또는 니이더로 용융 혼련한 후, 냉각, 분쇄과정을 거쳐 얻은 최종 분말 제품으로 밀봉한 반도체 소자를 제공한다.In another aspect, the present invention provides a semiconductor device that is mixed with the epoxy resin composition using a Henschel mixer or a Lodige mixer, melt kneaded with a roll mill or kneader, and then sealed with a final powder product obtained through cooling and grinding. do.
상기 최종 분말 제품을 저압 트랜스퍼 성형법, 인젝션 성형법 또는 캐스팅 성형법으로 밀봉한 것을 특징으로 한다.The final powder product is sealed by a low pressure transfer molding method, an injection molding method or a casting molding method.
상기 반도체 소자가 동계 리드프레임, 철계 리드프레임, 동계 또는 철계 리드프레임에 니켈과 팔라듐을 포함하는 물질로 프리플레이팅된 리드프레임, 및 유기계 라미네이트 프레임 중에서 선택되는 리드프레임을 포함하는 것을 특징으로 한다.The semiconductor device may include a lead frame selected from a copper lead frame, an iron lead frame, a lead frame pre-plated with a material containing nickel and palladium in a copper or iron lead frame, and an organic laminate frame.
본 발명은 난연성 및 휨 특성이 우수하고, 성형성 및 신뢰성이 우수한 반도체 소자 를 제작하는 데에 유용하다.The present invention is useful for fabricating semiconductor devices having excellent flame retardancy and warpage characteristics, and excellent moldability and reliability.
본 발명은 에폭시수지, 경화제, 경화촉진제, 및 무기 충전제를 포함하는 에폭시 수지 조성물에 있어서, 상기 경화제로서 하기 화학식 1로 표시되는 바이페닐 함유 변성 페놀노볼락형 페놀수지를 사용하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자를 제공한다.In the epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler, a semiconductor comprising a biphenyl-containing modified phenol novolac-type phenol resin represented by the following formula (1) as the curing agent: An epoxy resin composition for sealing an element and a semiconductor device using the same are provided.
[화학식 1][Formula 1]
(상기 식에서, m과 n의 평균치는 각각 1 내지 10이며, 상기 두 반복 단위의 순서는 화학식 1 내에서 random하게 배치될 수 있다.)(In the above formula, the average value of m and n are 1 to 10, respectively, and the order of the two repeating units may be randomly arranged in Formula 1.)
상기 화학식 1의 바이페닐 함유 변성 페놀노볼락형 페놀수지는 그 자체로 난연 효과를 나타내며, 패키지 휨 특성에 효과적인 수지이다. 상기 바이페닐 함유 변성 페놀노볼락형 페놀수지는 수산기 당량이 100 내지 400이고, 연화점이 40 내지 120℃인 것이 바람직하다. 패키지의 난연성, 휨 특성 및 수지 조성물의 유동성 측면에서, 상기 바이페닐 함유 변성 페놀노볼락형 페놀수지는 전체 경화제에 대하여 5 내지 100 중량%로 사용되는 것이 바람직하고, 10 내지 95 중량%로 사용되는 것이 보다 바람직하며, 15 내지 90 중량%로 사용되는 것이 가장 바람직하다.The biphenyl-containing modified phenol novolac-type phenolic resin of Formula 1 exhibits a flame retardant effect in itself, and is an effective resin for package bending property. It is preferable that the said biphenyl containing modified phenol novolak-type phenol resin has a hydroxyl equivalent of 100-400, and a softening point is 40-120 degreeC. In view of flame retardancy, warpage characteristics of the package and fluidity of the resin composition, the biphenyl-containing modified phenol novolac-type phenol resin is preferably used in an amount of 5 to 100% by weight based on the total curing agent, and is used in an amount of 10 to 95% by weight. More preferably, it is most preferably used at 15 to 90% by weight.
본 발명에서, 상기 바이페닐 함유 변성 페놀노볼락형 페놀수지와 병용하여 사용할 수 있는 경화제로는 반도체 밀봉용으로 일반적으로 사용되는 것으로 2개 이상의 반응기를 가진 것이라면 특별히 한정되지 않으며 구체적으로는 페놀아랄킬형 페놀수지, 페놀노볼락형 페놀수지, 자일록(xylok)형 페놀수지, 크레졸노볼락형 페 놀수지, 나프톨형 페놀수지, 테르펜형 페놀수지, 다관능형 페놀수지, 디시클로펜타디엔계 페놀수지, 비스페놀 A와 레졸로부터 합성된 노볼락형 페놀수지, 트리스(하이드록시페닐)메탄, 디하이드록시바이페닐을 포함하는 다가 페놀 화합물, 무수 말레인산 및 무수 프탈산을 포함하는 산무수물, 메타페닐렌디아민, 디아미노이페닐메탄, 디아미노이페닐설폰 등의 방향족 아민 등을 들 수 있다. 이 중 특히 바람직한 경화제로는 하기 화학식 2로 표시되는 자일록형 페놀수지 또는 하기 화학식 3으로 표시되는 다관능형 페놀수지를 들 수 있다. 상기 바이페닐 함유 변성 페놀노볼락형 페놀수지를 포함하는 이들 경화제는 단독 혹은 병용하여 사용될 수 있으며, 경화제에 에폭시수지, 경화촉진제, 반응 조절제, 이형제, 커플링제, 응력완화제 등의 기타 성분과 멜트마스터배치(melt master batch)와 같은 선 반응을 시켜 만든 부가 화합물로도 사용할 수 있다. 사용량은 전체 에폭시 수지 조성물에 대하여 0.5 ~ 12 중량%가 바람직하며, 1 ~ 8 중량%가 보다 바람직하다. 상기 에폭시수지와 경화제와의 배합비는 패키지에서의 기계적 성질 및 내습 신뢰성의 요구에 따라 경화제에 대한 에폭시수지의 화학 당량비가 0.5 ~ 2인 것이 바람직하며, 0.8 ~ 1.6 범위에서 사용하는 것이 보다 바람직하다.In the present invention, the curing agent that can be used in combination with the biphenyl-containing modified phenol novolak-type phenol resin is generally used for semiconductor sealing and is not particularly limited as long as it has two or more reactors, and specifically, a phenol aralkyl type Phenol resin, phenol novolak phenol resin, xylok phenol resin, cresol novolak phenol resin, naphthol phenol resin, terpene phenol resin, polyfunctional phenol resin, dicyclopentadiene phenol resin, Novolac-type phenolic resins synthesized from bisphenol A and resol, polyhydric phenol compounds including tris (hydroxyphenyl) methane, dihydroxybiphenyl, acid anhydrides including maleic anhydride and phthalic anhydride, metaphenylenediamine, dia Aromatic amines, such as a minoy phenylmethane and diamino diphenyl sulfone, etc. are mentioned. Among these, a particularly preferable curing agent includes a xylock type phenol resin represented by the following formula (2) or a polyfunctional type phenol resin represented by the following formula (3). These curing agents including the biphenyl-containing modified phenol novolak-type phenolic resins may be used alone or in combination, and other components such as epoxy resins, curing accelerators, reaction regulators, mold release agents, coupling agents, stress relaxation agents, and melt masters in the curing agent. It can also be used as an additive compound made by pre-reaction such as melt master batch 0.5-12 weight% is preferable with respect to the total epoxy resin composition, and, as for the usage-amount, 1-8 weight% is more preferable. The compounding ratio of the epoxy resin and the curing agent is preferably a chemical equivalent ratio of the epoxy resin to the curing agent is 0.5 to 2, more preferably 0.8 to 1.6, depending on the mechanical properties and moisture resistance reliability of the package.
[화학식 2][Formula 2]
(상기 식에서, n의 평균치는 0 내지 7이다.)(In the above formula, the average value of n is 0 to 7.)
[화학식 3][Formula 3]
(상기 식에서 n의 평균치는 1 내지 7이다.)(In the formula, the average value of n is 1 to 7.)
상기 화학식 2의 자일록형 페놀수지는 수지 조성물의 유동성 및 신뢰성 강화 측면에서 바람직하며, 상기 화학식 3의 다관능형 페놀수지는 휨 특성 개선 측면에서 바람직하다.Xyloxy phenolic resin of the formula (2) is preferred in terms of enhancing the fluidity and reliability of the resin composition, polyfunctional phenolic resin of the formula (3) is preferred in terms of improving the bending characteristics.
본 발명의 에폭시수지로는 반도체 밀봉용으로 일반적으로 사용되는 에폭시수지라면 특별히 제한되는 것은 아니며, 분자 중에 2개 이상의 에폭시기를 함유하는 에폭시 화합물인 것이 바람직하다. 이와 같은 에폭시수지로는 페놀 또는 알킬 페놀류와 히드록시벤즈알데히드와의 축합물을 에폭시화함으로써 얻어지는 에폭시수지, 페놀노볼락형 에폭시수지, 크레졸노볼락형 에폭시수지, 바이페닐형 에폭시수지, 페 놀아랄킬형 에폭시수지, 다관능형 에폭시수지, 나프톨노볼락형 에폭시수지, 비스페놀Ａ/비스페놀F/비스페놀AD의 노볼락형 에폭시수지, 비스페놀Ａ/비스페놀F/비스페놀AD의 글리시딜에테르, 비스히드록시비페닐계 에폭시수지, 디시클로펜타디엔계 에폭시수지 등을 들 수 있다. 특히 바람직한 에폭시수지로서 하기 화학식 4로 표시되는 바이페닐(biphenyl)형 에폭시수지 또는 하기 화학식 5로 표시되는 바이페닐 함유 변성 노볼락형 에폭시수지를 들 수 있다. 이들 에폭시수지는 단독 혹은 병용하여 사용될 수 있으며, 에폭시수지에 경화제, 경화촉진제, 반응 조절제, 이형제, 커플링제, 응력완화제 등의 기타 성분과 멜트마스터배치(melt master batch)와 같은 선반응을 시켜 만든 부가 화합물도 사용할 수 있다. 또한 내습 신뢰성 향상을 위해 이러한 에폭시수지 중에 함유된 염소 이온, 나트륨 이온, 및 그 밖의 이온성 불순물이 낮은 것을 사용한 것이 바람직하다. 사용량은 전체 에폭시 수지 조성물에 대하여 2 ~ 15 중량%가 바람직하며, 3 ~ 12 중량%가 보다 바람직하다.The epoxy resin of the present invention is not particularly limited as long as it is an epoxy resin generally used for semiconductor sealing, and is preferably an epoxy compound containing two or more epoxy groups in a molecule. Such epoxy resins include epoxy resins obtained by epoxidizing condensates of phenol or alkyl phenols with hydroxybenzaldehyde, phenol novolac epoxy resins, cresol novolac epoxy resins, biphenyl epoxy resins, and phenol aralkyl types. Epoxy resin, polyfunctional epoxy resin, naphthol novolac epoxy resin, novolak epoxy resin of bisphenol A / bisphenol F / bisphenol AD, glycidyl ether of bisphenol A / bisphenol F / bisphenol AD, bishydroxy biphenyl type Epoxy resin, dicyclopentadiene type epoxy resin, etc. are mentioned. Particularly preferred epoxy resins include biphenyl epoxy resins represented by the following general formula (4) or biphenyl-containing modified novolac epoxy resins represented by the following general formula (5). These epoxy resins may be used alone or in combination, and are made by preliminary reaction such as a melt master batch with other components such as a curing agent, a curing accelerator, a reaction regulator, a releasing agent, a coupling agent, a stress relaxation agent, and the like. Additional compounds can also be used. In addition, it is preferable to use those having low chlorine ions, sodium ions, and other ionic impurities contained in such epoxy resins to improve the moisture resistance reliability. 2-15 weight% is preferable with respect to the whole epoxy resin composition, and, as for the usage-amount, 3-12 weight% is more preferable.
[화학식 4][Formula 4]
(상기 식에서 n의 평균치는 0 내지 7이다.)(In the above formula, the average value of n is 0 to 7.)
[화학식 5][Formula 5]
(상기 식에서, m과 n의 평균치는 각각 1 내지 10이며, 상기 두 반복 단위의 순서는 화학식 5 내에서 random하게 배치될 수 있다.)(In the above formula, the average value of m and n are 1 to 10, respectively, and the order of the two repeating units may be randomly arranged in Formula 5.)
상기 화학식 4의 바이페닐형 에폭시수지는 수지 조성물의 유동성 및 패키지 신뢰성 측면에서 바람직하고, 상기 화학식 5의 바이페닐 함유 변성 노볼락형 에폭시수지는 그 자체로 난연 효과를 나타내며, 패키지 휨 특성에 효과적인 수지이다. 상기 바이페닐 함유 변성 노볼락형 에폭시수지는 에폭시 당량이 100 내지 400이고, 연화점이 40 내지 80℃인 것이 바람직하다.The biphenyl type epoxy resin of Chemical Formula 4 is preferable in view of fluidity and package reliability of the resin composition, and the biphenyl-containing modified novolac epoxy resin of Chemical Formula 5 exhibits a flame retardant effect in itself, and is effective in package bending characteristics. to be. It is preferable that the said biphenyl containing modified novolak-type epoxy resin has an epoxy equivalent of 100-400, and a softening point of 40-80 degreeC.
본 발명에 사용되는 경화촉진제는 에폭시수지와 경화제의 반응을 촉진하는 물질이다. 예를 들면, 제 3급아민, 유기금속화합물, 유기인화합물, 이미다졸, 붕소화합물 등이 사용 가능하다. 제 3급 아민에는 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디에틸아미노에탄올, 트리(디메틸아미노메틸)페놀, 2-2-(디메틸아미노메틸)페놀, 2,4,6-트리스(디아미노메틸)페놀과 트리-2-에틸헥실 에시드의 염 등이 있다. 유기 금속화합물에는 크로뮴아세틸아세토네이트, 징크아세틸아세토네이트, 니켈아세틸아세토네이트 등이 있다. 유기인화합물에는 트리스-4-메톡시포스핀, 테트라부틸포스포늄브로마이드, 부틸트리페닐포스포늄브로마이드, 페닐포스핀, 디페닐포스핀, 트리페닐포스핀, 트리페닐포스핀트리페닐보란, 트리페닐포스핀-1,4-벤조퀴논 부가물 등이 있다. 이미다졸류에는 2-메틸이미다졸, 2-페닐이미다졸, 2-아미노이미다졸, 2메틸-1-비닐이미다졸, 2-에틸-4-메틸이미다졸, 2-헵타데실이미다졸 등이 있다. 붕소화합물에는 테트라페닐포스포늄-테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트, 테트라페닐보론염, 트리플루오로보란-n-헥실아민, 트리플루오로보란모노에틸아민, 테트라플루오로보란트리에틸아민, 테트라플루오로보란아민 등이 있다. 이외에도 1,5-디아자바이시클로[4.3.0]논-5-엔(1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-디아자바이시클로[5.4.0]운덱-7-엔(1,8-diazabicyclo[5.4.0]undec-7-ene: DBU) 및 페놀노볼락 수지염 등을 사용할 수 있다. 특히 바람직한 경화촉진제로는 유기인화합물, 또는 아민계, 또는 이미다졸계 경화촉진제를 단독 혹은 혼합하여 사용하는 것을 들 수 있다. 상기 경화촉진제는 에폭시수지 또는 경화제와 선반응하여 만든 부가물을 사용하는 것도 가능하다. 본 발명에서 사용되는 경화촉진제의 배합량은 전체 에폭시 수지 조성물에 대하여 0.001 ~ 1.5 중량%가 바람직하며, 0.01 ~ 1 중량%가 보다 바람직하다.The curing accelerator used in the present invention is a substance that promotes the reaction between the epoxy resin and the curing agent. For example, tertiary amines, organometallic compounds, organophosphorus compounds, imidazoles, boron compounds and the like can be used. Tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4,6-tris (diamino Salts of methyl) phenol and tri-2-ethylhexyl acid, and the like. Organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate and the like. Organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, butyltriphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenyl Phosphine-1,4-benzoquinone adducts and the like. The imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-heptadecyl. Midazoles and the like. Boron compounds include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroboranetriethylamine And tetrafluoroboraneamine. In addition, 1,5- diazabicyclo [4.3.0] non-5-ene (1, 5- diazabicyclo [4.3.0] non-5-ene: DBN), 1, 8- diazabicyclo [5.4. 0] undec-7-ene (1,8-diazabicyclo [5.4.0] undec-7-ene: DBU) and phenol novolak resin salts may be used. Particularly preferred curing accelerators include organophosphorus compounds, amine-based or imidazole-based curing accelerators used alone or in combination. The curing accelerator may use an epoxy resin or an adduct made by linear reaction with a curing agent. As for the compounding quantity of the hardening accelerator used by this invention, 0.001-1.5 weight% is preferable with respect to the whole epoxy resin composition, and 0.01-1 weight% is more preferable.
본 발명에 사용되는 무기 충전제는 에폭시 수지 조성물의 기계적 물성의 향상과 저 응력화를 위하여 사용되는 물질이다. 일반적으로 사용되는 예로서는 용융 실리카, 결정성 실리카, 탄산칼슘, 탄산마그네슘, 알루미나, 마그네시아, 클레이, 탈크, 규산칼슘, 산화티탄, 산화안티몬, 유리섬유 등을 들 수 있다. 저응력화를 위해서는 선평창계수가 낮은 용융실리카를 사용하는 것이 바람직하다. 상기 용융실리카는 진비중이 2.3 이하인 비결정성 실리카를 의미하는 것으로 결정성 실리카를 용융하여 만들거나 다양한 원료로부터 합성한 비결정성 실리카도 포함된다. 용융실리카의 형상 및 입경은 특별히 한정되지는 않지만, 평균 입경 0.1 ~ 3㎛의 구상용융실리카를 3 ~ 20 중량%, 평균 입경 3 ~ 10㎛의 구상용융실리카를 5 ~ 30 중량%, 평균 입경 10 ~ 25㎛의 구상용융실리카를 50 ~ 92 중량%를 포함한 용융실리카 혼합물을 전체 무기 충전제에 대하여 40 ~ 100 중량%가 되도록 포함하는 것이 좋다. 또한, 용도에 맞춰 그 최대 입경을 45um, 55um 및 75um 등으로 조정해서 사용할 수도 있다. 용융 구상 실리카에는 도전성의 카본이 실리카 표면에 이물로서 포함되는 경우가 있으나 극력 이물의 혼입이 적은 물질을 선택하는 것도 중요하다. 본 발명에서 무기 충전제의 비율은 성형성, 저응력성, 고온강도 등의 요구 물성에 따라 다르지만, 전체 에폭시 수지 조성물에 대하여 72 ~ 95 중량%로 사용하는 것이 바람직하며, 80 ~ 93 중량% 비율로 사용하는 것이 더욱 바람직하다.The inorganic filler used in the present invention is a material used for improving the mechanical properties of the epoxy resin composition and reducing the stress. Examples generally used include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fibers and the like. In order to reduce the stress, it is preferable to use molten silica having a low linear window coefficient. The fused silica refers to amorphous silica having a specific gravity of 2.3 or less, and includes crystalline silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle diameter of the molten silica are not particularly limited, but 3 to 20% by weight of spherical molten silica having an average particle diameter of 0.1 to 3 µm, 5 to 30% by weight of spherical molten silica having an average particle diameter of 3 to 10 µm and an average particle diameter of 10 It is preferable to include a molten silica mixture containing 50 to 92% by weight of spherical molten silica of ˜25 μm to 40 to 100% by weight relative to the total inorganic filler. Moreover, it can also be used, adjusting the maximum particle diameter to 45um, 55um, 75um, etc. according to a use. In fused spherical silica, conductive carbon may be included as a foreign material on the silica surface, but it is also important to select a material with little foreign matter mixing. In the present invention, the ratio of the inorganic filler depends on the required physical properties such as moldability, low stress, high temperature strength, etc., but is preferably used in an amount of 72 to 95% by weight based on the total epoxy resin composition, and the ratio of 80 to 93% by weight. It is more preferable to use.
또한, 본 발명의 에폭시 수지 조성물은 본 발명의 목적을 해하지 않는 범위에서 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유기염료, 무기염료 등의 착색제, 에폭시실란, 아미노실란, 머캡토실란, 알킬실란, 알콕시실란 등의 커플링제 및 변성 실리콘 오일, 실리콘 파우더, 실리콘 레진 등의 응력완화제 등을 필요에 따라 함유할 수 있다. 이때, 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며, 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복시 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대하여 0.01 내지 2 중량%로 사용할 수 있다. 또한, 포스파젠, 붕산아연, 수산화알루미늄, 수산화마그네슘 등의 유, 무기 난연제를 필요에 따라 함유할 수 있다.In addition, the epoxy resin composition of the present invention is a release agent such as higher fatty acids, higher fatty acid metal salts, ester waxes, coloring agents such as carbon black, organic dyes, inorganic dyes, epoxy silanes, amino silanes, etc. without departing from the object of the present invention. Coupling agents, such as mercaptosilane, alkylsilane, and alkoxysilane, and stress relaxation agents, such as modified silicone oil, silicone powder, and silicone resin, etc. can be contained as needed. At this time, the modified silicone oil is preferably a silicone polymer excellent in heat resistance, a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like, or a mixture of two or more kinds thereof to the entire epoxy resin composition. It can be used in 0.01 to 2% by weight relative to the. Moreover, oil and inorganic flame retardants, such as phosphazene, zinc borate, aluminum hydroxide, and magnesium hydroxide, can be contained as needed.
이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀 믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융혼련한 후, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다. 본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting) 등의 방법으로도 성형이 가능하다. 상기 방법에 의해 동계 리드프레임 또는 철계 리드프레임 또는 상기 리드프레임에 니켈과 팔라듐을 포함하는 물질로 프리플레이팅된 리드프레임, 또는 유기계 라미네이트 프레임의 반도체 소자를 제조할 수 있다.As a general method for producing an epoxy resin composition using the raw materials described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Roedig mixer, melt-kneaded with a roll mill or kneader, and then cooled and pulverized. The process of obtaining the final powder product is used. As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, the low pressure transfer molding method is most commonly used, and molding can also be carried out by a method such as injection molding or casting. By the above method, a semiconductor device of a copper lead frame or an iron lead frame or a lead frame pre-plated with a material containing nickel and palladium on the lead frame or an organic laminate frame can be manufactured.
다음에 본 발명을 실시예에 의거 더욱 상세히 설명하나, 실시예에 의하여 본 발명이 한정되는 것은 아니다. Next, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by Examples.
[실시예 1 내지 3, 비교예 1 또는 2][Examples 1 to 3, Comparative Example 1 or 2]
다음 표 1의 조성에 따라 헨셀 믹서를 이용하여 균일하게 혼합한 후, 연속 니이더를 이용하여 100 ~ 120℃ 범위에서 용융 혼련 후 냉각, 분쇄하여 반도체 밀봉용 에폭시 수지 조성물을 제조하였다. 각종 물성은 다음의 방법에 의해 평가하였다. 평가 결과를 표 2에 나타내었다.Next, the mixture was uniformly mixed using a Henschel mixer according to the composition of Table 1, and then melt-kneaded in a range of 100 to 120 ° C. using a continuous kneader, followed by cooling and grinding to prepare an epoxy resin composition for semiconductor sealing. Various physical properties were evaluated by the following method. The evaluation results are shown in Table 2.
(유동성/스파이럴플로우): EMMI-1-66에 준하여 평가용 금형을 사용하여 175℃, 70Kgf/cm2에서 트랜스퍼 몰딩 프레스를 이용하여 유동길이를 측정하였다. 측정값이 높을수록 유동성이 우수한 것이다. (Fluidity / spiral flow): The flow length was measured using a transfer molding press at 175 ° C. and 70 Kgf / cm 2 using an evaluation mold in accordance with EMMI-1-66. The higher the measured value, the better the fluidity.
(유리전이온도(Tg)): TMA(Thermomechanical Analyzer)로 평가하였다.(Glass Transition Temperature (Tg)): Evaluated by TMA (Thermomechanical Analyzer).
(굴곡강도 및 굴곡탄성율): ASTM D-790에 준하여 표준시편(125×12.6×6.4 mm)을(Bending Strength and Flexural Modulus): Standard specimens (125 × 12.6 × 6.4 mm) were prepared according to ASTM D-790.
만든 후 175℃에서 4시간 경화시킨 시편으로 UTM(Universal Testing Machine)을 이용하여 상온에서 측정하였다.After making 4 hours at 175 ℃ cured specimens were measured at room temperature using a universal testing machine (UTM).
(난연성): UL 94 V-0 규격에 준하여 1/8인치 두께를 기준으로 평가하였다.(Flame retardance): Based on the UL 94 V-0 standard was evaluated based on 1/8 inch thickness.
(성형성): 표 1 및 2의 에폭시 수지 조성물로 MPS(Multi Plunger System) 성형기를 이용하여 175℃에서 70초간 트랜스퍼 몰딩으로 성형시켜 FBGA(62mm×240mm×1.1mm) 패키지를 제작하였다. 175℃에서 4시간 동안 후경화(PMC; post mold cure)시킨 이후 상온으로 냉각하였다. 이후, 육안으로 패키지 표면에 관찰되는 보이드(void) 개수를 측정하였다.(Forming): The epoxy resin compositions of Tables 1 and 2 were molded by transfer molding at 175 ° C. for 70 seconds using an MPS (Multi Plunger System) molding machine to prepare an FBGA (62 mm × 240 mm × 1.1 mm) package. After curing for 4 hours at 175 ° C (PMC; post mold cure) and cooled to room temperature. Then, the number of voids observed on the package surface was visually measured.
(휨 특성): 상기 성형성 평가를 위하여 제작한 FBGA 패키지에 대하여 비접촉식 레이저(laser) 측정기를 사용하여 각각 상면의 대각선 방향의 중심과 끝에서의, 지면으로부터의 높이 차를 측정하였다.(Bending characteristic): The height difference from the ground at the center and the end of the diagonal direction of the upper surface was measured about the FBGA package produced for the said moldability evaluation using the non-contact laser measuring machine, respectively.
(신뢰성): 상기 휨 특성 평가를 마친 FBGA 패키지를 125℃에서 24시간 건조시킨 후, 5사이클(1 사이클은 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 의미함)의 열충격 시험을 수행하였다. 이후, 패키지를 30℃, 60% 상대습도 조건 하에서 120시간 동안 방치한 후 260℃에서 30초 동안 IR리플로우(reflow)를 1회 통과시키는 것을 3회 반복하는 프리컨디션 조건 이후에 패키지 크랙 발생 유무를 육안으로 평가하였다. 이 단계에서 크랙이 발생한 경우에는 이후 평가를 진행하지 않았다. (Reliability): After the FBGA package having been evaluated for bending characteristics was dried at 125 ° C. for 24 hours, 5 cycles (one cycle was left for 10 minutes at −65 ° C., 5 minutes at 25 ° C., and 10 minutes at 150 ° C.). Thermal shock test). Thereafter, the package is left at 30 ° C. and 60% relative humidity condition for 120 hours, and then package cracks are generated after preconditioning condition of repeating the IR reflow once for 30 seconds at 260 ° C. for 30 seconds. Was evaluated visually. If a crack occurred at this stage, no further evaluation was conducted.
a) 열충격 시험: 상기 프리컨디션 조건을 통과한 FBGA 패키지에 대하여 1000 사이클의 열충격 시험을 진행한 후, 비파괴 검사기인 C-SAM(Scanning Acoustical Microscopy)을 이용하여 내부 및 외부 크랙 및 내부 박리 발생 유무를 평가하였다.a) Thermal Shock Test: After 1000 cycles of the thermal shock test on the FBGA package that passed the precondition conditions, using the non-destructive tester C-SAM (Scanning Acoustical Microscopy) to determine the occurrence of internal and external cracks and internal peeling Evaluated.
(단위: 중량%)(Unit: weight%)
(주)(week)
1) YX-4000, Japan Epoxy Resin 1) YX-4000, Japan Epoxy Resin
2) 시제품(화학식 5의 구조이며, 에폭시 당량 280, 연화점 60℃), Kolon 2) Prototype (structure of formula 5, epoxy equivalent 280, softening point 60 ℃), Kolon
3) 시제품(화학식 1의 구조이며, 수산기 당량 210, 연화점 70℃), Kolon 3) Prototype (structure of formula 1, hydroxyl equivalent 210, softening point 70 ℃), Kolon
4) MEH-7800-4S, Meiwa kasei 4) MEH-7800-4S, Meiwa kasei
5) MEH-7500-3S, Meiwa kasei 5) MEH-7500-3S, Meiwa kasei
6) ESB-400T, Sumitomo Chemical 6) ESB-400T, Sumitomo Chemical
7) TPP, Hokko Chemical 7) TPP, Hokko Chemical
8) KBM-403, Shin Etsu silicon 8) KBM-403, Shin Etsu silicon
상기 결과로부터 본 발명의 반도체 수지 밀봉용 에폭시 수지 조성물은 패키지의 휨 현상 개선 및 난연성, 성형성, 신뢰성 향상에 탁월한 효과가 있는 것을 확인할 수 있었다.From the above results, it was confirmed that the epoxy resin composition for semiconductor resin encapsulation of the present invention has an excellent effect in improving warpage of the package and improving flame retardancy, moldability, and reliability.
Claims (10)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140179834A1 (en) * | 2012-12-24 | 2014-06-26 | Seung HAN | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same |
| KR101754775B1 (en) * | 2016-06-02 | 2017-07-06 | 현대자동차주식회사 | The Epoxy Potting Composition Applied To Parts Of Electric Apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08169939A (en) * | 1994-12-20 | 1996-07-02 | Sumitomo Metal Ind Ltd | Epoxy resin composition suitable for semiconductor sealng |
| JP2000212259A (en) | 1999-01-26 | 2000-08-02 | Sumikin Chemical Co Ltd | Liquid phenol resin and its preparation |
| JP2007186673A (en) | 2005-12-13 | 2007-07-26 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing and electronic component device |
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2007
- 2007-12-28 KR KR1020070139954A patent/KR100882332B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08169939A (en) * | 1994-12-20 | 1996-07-02 | Sumitomo Metal Ind Ltd | Epoxy resin composition suitable for semiconductor sealng |
| JP2000212259A (en) | 1999-01-26 | 2000-08-02 | Sumikin Chemical Co Ltd | Liquid phenol resin and its preparation |
| JP2007186673A (en) | 2005-12-13 | 2007-07-26 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing and electronic component device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140179834A1 (en) * | 2012-12-24 | 2014-06-26 | Seung HAN | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same |
| KR101557538B1 (en) | 2012-12-24 | 2015-10-06 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same |
| KR101754775B1 (en) * | 2016-06-02 | 2017-07-06 | 현대자동차주식회사 | The Epoxy Potting Composition Applied To Parts Of Electric Apparatus |
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