KR101226529B1 - Apparatus for growing single crystal - Google Patents
Apparatus for growing single crystal Download PDFInfo
- Publication number
- KR101226529B1 KR101226529B1 KR1020100007391A KR20100007391A KR101226529B1 KR 101226529 B1 KR101226529 B1 KR 101226529B1 KR 1020100007391 A KR1020100007391 A KR 1020100007391A KR 20100007391 A KR20100007391 A KR 20100007391A KR 101226529 B1 KR101226529 B1 KR 101226529B1
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- South Korea
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- crucible
- refrigerant
- cooling
- heater
- unit
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal growth apparatus capable of easily growing crystals with uniform solute distribution, generating ingots containing less impurities, and efficiently controlling the rate of crystal growth.
To this end, the single crystal growth apparatus according to the present invention has a crucible in which a groove for fixing seed crystals is formed on an inner bottom surface, a heater portion formed adjacent to the outside of the crucible, and a refrigerant is circulated to the groove side of the crucible bottom. A heat exchange part for cooling the lower part of the crucible, a growth furnace accommodating the crucible, the heater part, and the heat exchange part therein, and a crucible vertical motion part for moving the crucible vertically in the growth path are disclosed.
Description
The present invention relates to a single crystal growth apparatus.
In general, as the single crystal growth method, Bernoulli method, Czochralski (CZ) method, Bridgman method, heat exchange (HEM) method and the like are generally used.
The Bernoulli method is a method in which alumina powder is passed through an oxygen-hydrogen flame to melt, and then the melt is dropped onto a seed crystal while simultaneously rotating the crystal to obtain a crystal. In this method, crystal growth is easy and crystals can be grown most inexpensively, but crystals are subjected to high thermal shock during crystal growth, and cracks easily occur, and they are difficult to use for watches and decorative purposes in terms of quality and size. There are disadvantages.
The Czochralski method has the advantage of free diameter control and high productivity with long lengths.However, in crystal growth of brittle materials such as sapphire single crystals, vibrations or cores generated by pullers while rotating and raising the temperature gradient and crystals Due to the negative stress concentration, the diameter of the single crystal is limited and the growth axis direction is limited.
The Bridgman method is a method of growing a single crystal by immersing the raw powder in a crucible and melting the crucible, then slowly moving the crucible to a low temperature region below the melting point of the raw material. The Bridgman method can grow polycrystals of the columnar in the vertical direction, but has a disadvantage in that seeding is difficult.
The heat exchange method is a method in which a raw material powder and a single crystal seed are contained in the lower part of the crucible, the raw material powder is melted, and the raw material material is solidified from the seed by solidification by cooling using a heat exchanger under the crucible. This heat exchange method produces a large temperature gradient inside the crucible, so that less impurities are contained in the product, and in particular, a large temperature gradient at the inner center of the crucible and the outer wall of the crucible can prevent contamination from the crucible outer wall. However, the heat exchange method can cause product defects due to the large temperature gradient inside the crucible.
SUMMARY OF THE INVENTION An object of the present invention is to provide a single crystal growth apparatus capable of easily growing crystals of uniform solute distribution, generating ingots with less impurities, and controlling the rate of crystal growth efficiently.
In order to achieve the above object, the single crystal growth apparatus according to the present invention includes a crucible in which grooves for fixing seed crystals are formed on an inner bottom thereof; A heater unit formed adjacent to the outside of the crucible; A heat exchanger for cooling the lower part of the crucible by circulating a refrigerant to a groove side of the lower part of the crucible; A growth furnace accommodating the crucible, the heater part and the heat exchange part therein; And a crucible vertical movement part for moving the crucible vertically in the growth path.
Here, a cooling unit for cooling the lower portion of the crucible and for cooling the refrigerant discharged from the heat exchange unit; And a refrigerant storage unit storing the refrigerant cooled in the cooling unit and supplying the cooled refrigerant to the heat exchange unit.
In addition, the cooling unit coolant storage unit for storing and discharging the cooling water; And a coolant cooling unit cooling the coolant discharged from the heat exchange unit by a heat exchange method using the coolant discharged from the coolant storage unit.
In addition, the heat exchanger may include a cooling water circulation tube through which the cooling water discharged from the cooling water storage unit circulates.
The heater unit may include an upper heater formed to be spaced apart from the outside of the crucible on an upper portion of the growth path; A lower heater formed below the growth path to be spaced apart from the outside of the crucible; And an insulating member positioned between the upper heater and the lower heater.
The heat exchange part may include a refrigerant supply pipe configured to supply a refrigerant to a groove side of the lower portion of the crucible; And it may include a refrigerant discharge pipe is formed so as to discharge the refrigerant cooling the lower portion of the crucible.
In addition, the coolant discharge pipe may be bifurcated to be adjacent to both sides of the coolant supply pipe.
In addition, the upper end of the refrigerant discharge pipe of the two branches is formed higher than the upper end of the refrigerant supply pipe, it may be formed to surround the groove side of the lower portion of the crucible.
In addition, the growth pump may further include a vacuum pump unit for adjusting the air pressure.
The single crystal growth apparatus according to the present invention has a low horizontal temperature gradient at the center of the crucible, so that crystal growth of a uniform solute distribution is easy. In addition, the single crystal growth apparatus according to the present invention has a small content of impurities in the ingot produced. In addition, the single crystal growth apparatus according to the present invention can precisely control the rate of crystal growth and the like through the adjustment of the heat exchanger under the crucible as well as the temperature control of the heater outside the crucible.
1 is a conceptual diagram briefly showing a single crystal growth apparatus according to the present invention.
2A is an enlarged view of A of FIG. 1.
2B is an enlarged view of a heat exchanger according to another embodiment of the present invention.
2C is an enlarged view of a heat exchanger according to still another embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.
Hereinafter will be described the configuration and operation principle of a single crystal growth apparatus according to an embodiment of the present invention.
1 is a conceptual diagram briefly showing a single crystal growth apparatus according to the present invention according to the present invention. 2A is an enlarged view of A of FIG. 1. And the inside of the growth path of FIG. 1 corresponds to a longitudinal cross-sectional view.
1 and 2A, the single
The
The
The
The crucible
The
The
The
The
In the single
Hereinafter, the configuration of a single crystal growth apparatus according to another embodiment of the present invention will be described.
1 is a conceptual diagram briefly showing a single crystal growth apparatus according to the present invention according to the present invention. Figure 2b is an enlarged view of the heat exchange unit of the single crystal growth apparatus according to another embodiment of the present invention.
FIG. 2B is an enlarged view of the same point in time as that of FIG. 2A, and the configuration of the single crystal growth apparatus is the same except for the configuration of the
The
Hereinafter will be described the configuration of the heat exchanger according to another embodiment of the present invention.
1 is a conceptual diagram briefly showing a single crystal growth apparatus according to the present invention according to the present invention. Figure 2c is an enlarged view of the heat exchange unit of the single crystal growth apparatus according to another embodiment of the present invention.
FIG. 2B is an enlarged view of the same point in time as that of FIG. 2A, and the configuration of the single crystal growth apparatus is the same except for the configuration of the
The
As described above, the present invention is not limited to the above-described specific preferred embodiments, and any person skilled in the art may apply the present invention without departing from the gist of the present invention. It is to be understood that various changes and modifications may be practiced within the scope of the appended claims.
100; Single crystal growth apparatus
110;
130;
150; Crucible
170; Cooling
190; The control unit
Claims (9)
A heater unit formed adjacent to the outside of the crucible;
A heat exchanger for cooling the lower part of the crucible by circulating a refrigerant to a groove side of the lower part of the crucible;
A growth furnace accommodating the crucible, the heater part and the heat exchange part therein; And
It includes a crucible vertical movement for moving the crucible in the vertical direction in the growth path,
The heater part
An upper heater formed at an upper portion of the growth path to be spaced apart from the outside of the crucible;
A lower heater formed below the growth path to be spaced apart from the outside of the crucible; And
It includes a heat insulating member located between the upper heater and the lower heater,
The heat exchanger
A refrigerant supply pipe configured to supply refrigerant to a groove side of the lower portion of the crucible; And
And a refrigerant discharge pipe configured to discharge the refrigerant cooled in the lower part of the crucible,
The refrigerant discharge pipe is bifurcated so as to be adjacent to both sides of the refrigerant supply pipe,
The upper end of the refrigerant discharge pipe of the two branches is formed higher than the upper end of the refrigerant supply pipe, it characterized in that the single crystal growth apparatus is formed to surround the groove side of the lower portion of the crucible.
A cooling unit for cooling the lower portion of the crucible and cooling the refrigerant discharged from the heat exchange unit; And
And a refrigerant storage unit storing the refrigerant cooled in the cooling unit and supplying the cooled refrigerant to the heat exchange unit.
The cooling unit
Cooling water storage unit for storing and discharging the cooling water; And
And a refrigerant cooling unit cooling the refrigerant discharged from the heat exchange unit by a heat exchange method using the cooling water discharged from the cooling water storage unit.
The heat exchange unit is a single crystal growth apparatus further comprises a cooling water circulation pipe through which the cooling water discharged from the cooling water storage unit circulates.
Single crystal growth apparatus further comprises a vacuum pump unit for adjusting the air pressure of the growth furnace.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100007391A KR101226529B1 (en) | 2010-01-27 | 2010-01-27 | Apparatus for growing single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100007391A KR101226529B1 (en) | 2010-01-27 | 2010-01-27 | Apparatus for growing single crystal |
Publications (2)
Publication Number | Publication Date |
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KR20110087795A KR20110087795A (en) | 2011-08-03 |
KR101226529B1 true KR101226529B1 (en) | 2013-01-25 |
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KR1020100007391A KR101226529B1 (en) | 2010-01-27 | 2010-01-27 | Apparatus for growing single crystal |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103628127A (en) * | 2013-11-26 | 2014-03-12 | 江苏大学 | DSS (directional solidification system) quasi-monocrystal silicon growth furnace and growth method of quasi-monocrystal silicon |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07149592A (en) * | 1993-11-30 | 1995-06-13 | Furukawa Electric Co Ltd:The | Method for growing single crystal and apparatus therefor |
KR20050057815A (en) * | 2003-12-11 | 2005-06-16 | 주식회사 모노세라피아 | A apparatus for growing single crystal |
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2010
- 2010-01-27 KR KR1020100007391A patent/KR101226529B1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07149592A (en) * | 1993-11-30 | 1995-06-13 | Furukawa Electric Co Ltd:The | Method for growing single crystal and apparatus therefor |
KR20050057815A (en) * | 2003-12-11 | 2005-06-16 | 주식회사 모노세라피아 | A apparatus for growing single crystal |
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KR20110087795A (en) | 2011-08-03 |
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