KR101158080B1 - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- KR101158080B1 KR101158080B1 KR1020100070840A KR20100070840A KR101158080B1 KR 101158080 B1 KR101158080 B1 KR 101158080B1 KR 1020100070840 A KR1020100070840 A KR 1020100070840A KR 20100070840 A KR20100070840 A KR 20100070840A KR 101158080 B1 KR101158080 B1 KR 101158080B1
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- light emitting
- electrode pad
- corner
- emitting diode
- straight portions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
A light emitting diode suitable for alternating current driving including a plurality of light emitting cells on a single substrate is disclosed. This light emitting diode comprises: a substrate; A plurality of light emitting cells formed on the substrate and having corners opposite to one side at edges thereof; A first electrode pad formed at one side corner; A linear second electrode pad facing the first electrode pad and defining a periphery of the opposite corner with the edge; And a wire connecting the first electrode pad and the second electrode pad between two light emitting cells.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode comprising a compound semiconductor, and more particularly, to a light emitting diode having improved current dispersion characteristics and improved light uniformity. The present invention is suitable for a light emitting diode comprising a plurality of light emitting cells on a substrate, in particular for an AC driven light emitting diode.
A light emitting diode is a light emitting device made of a compound semiconductor, in particular, a group III nitride-based compound semiconductor, and has been widely used in display devices and backlight devices. Use area is getting wider.
A typical light emitting diode is turned on / off in accordance with the direction of the current under AC power. Therefore, when the light emitting diode is directly connected to an AC power source, the light emitting diode does not emit light continuously and is easily damaged by reverse current. As a technology for solving the problem of the light emitting diode, a light emitting diode that can be used by connecting directly to a high voltage AC power source is disclosed in International Publication No. WO2004 / 023568 (A1) "Light-EMITTING DEVICE HAVING LIGHT -EMITTING ELEMENTS, which was disclosed by SAKAI et.al.
1 is a view for explaining a conventional AC light emitting diode. Referring to FIG. 1, the AC light emitting diode 1 includes rectangular
The conventional light emitting diode 1 includes an n-
In the conventional light emitting diode, when the distance between the n-
In addition, as another type of light emitting diode in the related art, n-type electrode pads and p-type electrode pads are formed in a square or a circle, and these electrode pads are arranged to face diagonally at both corners of the light emitting cell. The light emitting diode of was also bright only around the p-type electrode pad 8, resulting in poor uniformity of light emission.
Accordingly, one problem to be solved by the present invention is to provide a light emitting diode having improved uniformity of light emission by improving current dispersion characteristics between electrode pads of light emitting cells having opposite polarities.
According to an aspect of the present invention, there is provided a light emitting diode comprising: a substrate and a plurality of light emitting cells formed on the substrate and having corners opposite to one side; A first electrode pad formed at one side corner; A linear second electrode pad facing the first electrode pad and defining a periphery of the opposite corner with the edge; And a wire connecting the first electrode pad and the second electrode pad between two light emitting cells. At this time, the ends of the second electrode pad is preferably adjacent to the edge.
According to one embodiment, the wiring is preferably formed by a step cover process, but may be a wire connecting between the electrode pads connected by the air bridge process.
According to an embodiment, the first electrode pad may include two or more straight portions or one or more curved portions connected along the contour of the one corner.
In example embodiments, the light emitting cell may have a quadrangular shape, and the first electrode pad may include two straight portions parallel to two sides of the one corner and adjacent to a vertex of the one corner. The second electrode pad may include two straight portions extending from the end portions adjacent to two sides of the opposite corner in a direction approaching the first electrode pad to meet each other in the middle. In addition, an angle formed by the straight portions of the second electrode pad may be equal to or greater than an angle formed by the straight portions of the first electrode pad. Alternatively, the second electrode pad may be formed of one straight portion whose both ends are adjacent to two sides of the opposite corner.
According to an exemplary embodiment, one of the straight portions of the first electrode pad may be connected to the adjacent light emitting cells in common, and the other straight portions may be connected to be in a straight line with the straight portions of the neighboring light emitting cells.
According to an embodiment, the light emitting cells may be circular or elliptical, and the first electrode pads may be formed in an arc shape along the one corner. In addition, the second electrode pad may include an arc shape parallel to the first electrode pad.
According to one embodiment, the light emitting cell is a polygon, the first electrode pad and the second electrode pad may be parallel.
In example embodiments, a first bonding pad and a second bonding pad are formed on the substrate, and the plurality of light emitting cells may include: a light emitting cell in which one end of a first electrode pad is connected by wiring to the first bonding pad; One end of the second electrode pad may include a light emitting cell connected to the second bonding pad by a wire.
According to another aspect of the present invention, a light emitting diode includes a light emitting cell having a corner opposite to one side, a first electrode pad formed at the one corner, and the opposite corner with the edge facing the first electrode pad. And a linear second electrode pad defining a periphery of the region.
In the present specification, the term 'light emitting cell' refers to a minimum unit of a compound semiconductor layer stack including a region where light is emitted.
The light emitting diode according to the present invention greatly improves the uniformity of light emission by the improved current dispersing property between the first electrode pad and the second electrode pad of the light emitting cell, and also increases the power efficiency. In particular, in the case of a light emitting diode including a plurality of light emitting cells on a single substrate, in particular, a light emitting diode connected to an AC power source, all of the light emitting cells emit uniform light and power efficiency is greatly increased.
1 is a plan view for explaining a conventional light emitting diode including a plurality of light emitting cells,
2 is a plan view illustrating a light emitting diode according to an embodiment of the present invention;
3 is an enlarged plan view illustrating a light emitting cell of the light emitting diode of FIG. 2;
4 to 10 are views for explaining light emitting cells according to various embodiments of the present disclosure.
11A and 11B are photographs showing light emission uniformity test results of a light emitting diode according to the present invention and a light emitting diode according to a comparative example.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience.
2 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present invention.
Referring to FIG. 2, the
The plurality of
As the
Referring to FIG. 3, the
The planar shape of the
FIG. 4 illustrates that the n-
5 shows that the p-
FIG. 6 is an improved embodiment of the embodiment of FIG. 5, in which both ends of the straight portion of the p-
7 shows an embodiment in which the
FIG. 8 illustrates an embodiment in which one n-
9 shows an embodiment in which the
10 shows an embodiment in which the
11A and 11B are photographic diagrams showing light emission uniformity test results of a light emitting diode according to an exemplary embodiment of the present invention and a conventional light emitting diode (comparative example), and Table 1 below is an embodiment of the present invention. The electrical characteristics of the comparative example were tested and compared. The material of the semiconductor layers constituting the light emitting cell and the size of the light emitting cells are the same as in the embodiment and the comparative example, and only the structure of the light emitting cell and the arrangement of electrode pads are different. An ITO layer of 1200 셀 thickness was employed on the light emitting cell.
The light emitting diode of this embodiment shown in FIG. 11A has a uniform brightness of the entire light emitting cell, whereas the light emitting diode of Comparative Example shown in FIG. 11B shows a large difference in brightness between the near and far portions of the p-type electrode pad. Note that the relatively dark areas shown in FIGS. 11A and 11B are actually light emitting areas.
Referring to Table 1 below, it can be seen that the power efficiency of the present embodiment is better than that of the comparative example. In the present embodiment, compared with the comparative example, it can be seen that the average forward voltage is lower, the output is larger, and the power efficiency is greatly increased.
WPE (%)
20: substrate 40: light emitting cell
60: n-type electrode pad (first electrode pad) 80: p-type electrode pad (second electrode pad)
32, 34: bonding pad
Claims (21)
A plurality of light emitting cells formed on the substrate and having one corner and an opposite corner at an edge thereof;
A first electrode pad formed at one side corner;
A linear second electrode pad facing the first electrode pad and defining a periphery of the opposite corner with the edge; And
A wiring connecting the first electrode pad and the second electrode pad between two light emitting cells;
End portions of the second electrode pad are adjacent to the edge.
A first bonding pad and a second bonding pad are formed on the substrate, and the plurality of light emitting cells may include: a light emitting cell having one end of a first electrode pad connected to the first bonding pad by a wire; and the second electrode pad. Wherein one end of the light emitting cell includes a light emitting cell connected to the second bonding pad by a wire.
A first electrode pad formed at one side corner; And
A linear second electrode pad facing the first electrode pad and defining a periphery of the opposite corner with the edge;
The first electrode pad includes at least two straight portions or at least one curved portion connected along the contour of the one corner.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100070840A KR101158080B1 (en) | 2010-07-22 | 2010-07-22 | Light emitting diode |
JP2011134171A JP2012028749A (en) | 2010-07-22 | 2011-06-16 | Light-emitting diode |
US13/187,010 US8629471B2 (en) | 2010-07-22 | 2011-07-20 | Light emitting diode |
PCT/KR2011/005372 WO2012011749A2 (en) | 2010-07-22 | 2011-07-21 | Light emitting diode |
TW100125790A TWI535076B (en) | 2010-07-22 | 2011-07-21 | Light emitting diode |
CN201510957553.0A CN105449086B (en) | 2010-07-22 | 2011-07-21 | Light emitting diode |
CN201180035911.2A CN103026516B (en) | 2010-07-22 | 2011-07-21 | Light emitting diode |
CN201510958319.XA CN105529343B (en) | 2010-07-22 | 2011-07-21 | Light emitting diode |
US14/099,423 US9202973B2 (en) | 2010-07-22 | 2013-12-06 | Light emitting diode |
JP2015142774A JP6081536B2 (en) | 2010-07-22 | 2015-07-17 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100070840A KR101158080B1 (en) | 2010-07-22 | 2010-07-22 | Light emitting diode |
Publications (2)
Publication Number | Publication Date |
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KR20120009874A KR20120009874A (en) | 2012-02-02 |
KR101158080B1 true KR101158080B1 (en) | 2012-06-22 |
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KR1020100070840A KR101158080B1 (en) | 2010-07-22 | 2010-07-22 | Light emitting diode |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014081243A1 (en) * | 2012-11-23 | 2014-05-30 | Seoul Viosys Co., Ltd. | Light emitting diode having a plurality of light emitting units |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101992366B1 (en) * | 2012-12-27 | 2019-06-24 | 엘지이노텍 주식회사 | Light emitting device |
CN104465919B (en) * | 2013-09-16 | 2017-05-24 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
Citations (4)
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JP2005123489A (en) * | 2003-10-20 | 2005-05-12 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting element and its manufacturing method |
US20060261355A1 (en) | 2005-05-19 | 2006-11-23 | Nichia Corporation | Nitride semiconductor device |
KR20070064208A (en) * | 2005-12-16 | 2007-06-20 | 서울옵토디바이스주식회사 | Light emitting device with light emitting cells arrayed |
JP2008192690A (en) | 2007-02-01 | 2008-08-21 | Nichia Chem Ind Ltd | Semiconductor light-emitting element |
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2010
- 2010-07-22 KR KR1020100070840A patent/KR101158080B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005123489A (en) * | 2003-10-20 | 2005-05-12 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting element and its manufacturing method |
US20060261355A1 (en) | 2005-05-19 | 2006-11-23 | Nichia Corporation | Nitride semiconductor device |
KR20070064208A (en) * | 2005-12-16 | 2007-06-20 | 서울옵토디바이스주식회사 | Light emitting device with light emitting cells arrayed |
JP2008192690A (en) | 2007-02-01 | 2008-08-21 | Nichia Chem Ind Ltd | Semiconductor light-emitting element |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014081243A1 (en) * | 2012-11-23 | 2014-05-30 | Seoul Viosys Co., Ltd. | Light emitting diode having a plurality of light emitting units |
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