KR101155605B1 - Apparatus for manufacturing poly-silicon thin film - Google Patents

Apparatus for manufacturing poly-silicon thin film Download PDF

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Publication number
KR101155605B1
KR101155605B1 KR1020100096860A KR20100096860A KR101155605B1 KR 101155605 B1 KR101155605 B1 KR 101155605B1 KR 1020100096860 A KR1020100096860 A KR 1020100096860A KR 20100096860 A KR20100096860 A KR 20100096860A KR 101155605 B1 KR101155605 B1 KR 101155605B1
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conductive pads
substrate stage
pad
electrode terminal
conductive
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KR1020100096860A
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Korean (ko)
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KR20120035372A (en
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노재상
홍원의
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주식회사 엔씰텍
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Priority to KR1020100096860A priority Critical patent/KR101155605B1/en
Priority to PCT/KR2011/007353 priority patent/WO2012047008A2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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Abstract

Provides an electric field applying device comprising a power supply unit including an electrode terminal for applying power to the conductive layer, a pad portion which is spaced apart from the electrode terminal, and n pads (where n is an integer of 2 or more). do.
Here, the pad part may rotate with an imaginary straight line parallel to the longitudinal direction of the electrode terminal as the rotation axis.

Description

Apparatus for Manufacturing Poly-Silicon thin film

The present invention relates to a polycrystalline silicon thin film manufacturing apparatus and an electric field applying apparatus for generating joule heat by applying power to a substrate and thereby producing a polycrystalline silicon thin film.

In general, amorphous silicon (a-Si) has disadvantages of low mobility and opening ratio of electrons, which are charge carriers, and incompatibility with CMOS processes. On the other hand, in the poly-silicon thin film device, it is possible to configure a driving circuit on the substrate like the pixel TFT-array, which is necessary for writing an image signal to the pixel, which was not possible in the amorphous silicon TFT (a-Si TFT). . Therefore, in the polycrystalline silicon thin film element, the connection between the plurality of terminals and the driver IC becomes unnecessary, so that the productivity and reliability can be increased and the thickness of the panel can be reduced. In addition, in the polycrystalline silicon TFT process, since the microfabrication technology of silicon LSI can be used as it is, a microstructure can be formed in wiring etc. Therefore, since there is no pitch constraint on the TAB mounting of the driver IC seen in the amorphous silicon TFT, pixel reduction is easy and a large number of pixels can be realized with a small field of view. The thin film transistor using polycrystalline silicon in the active layer has a high switching capability and the channel position of the active layer is determined by self-matching, compared with the thin film transistor using amorphous silicon, so that device miniaturization and CMOS are possible. For this reason, polycrystalline silicon thin film transistors are used as pixel switch elements in active matrix type flat panel displays (e.g., liquid crystal displays, organic ELs), and the like. It is emerging as a major device.

On the other hand, the inventors of the present invention in Korea Patent Application No. 2007-0021252 has proposed a method for crystallization by heating the joule by applying an electric field after interposing a conductive thin film on or below the silicon thin film.

FIG. 1A is a schematic cross-sectional view illustrating a conventional method of manufacturing a polycrystalline silicon thin film, and FIG. 1B is an enlarged view illustrating an enlarged area “A” of FIG. 1.

First, referring to FIG. 1A, in the conventional method of manufacturing a polycrystalline silicon thin film, an amorphous silicon film 12 is formed on a substrate 11 made of glass, stainless steel, plastic, or the like, and the amorphous silicon film 12 is formed on the substrate 11. An insulating film 13, such as a silicon oxide film or a silicon nitride film, is formed thereon, and the conductive layer 14 is formed on the insulating film 13 by a transparent conductive thin film or a metal thin film.

Thereafter, an electric field is applied to the conductive layer 14 through the electrode terminal 15 provided in the polycrystalline silicon thin film manufacturing apparatus, and the amorphous silicon film 12 is crystallized by Joule heating.

However, in the conventional method of manufacturing a polycrystalline silicon thin film, as shown in FIG. 1B, when the surface where the conductive layer and the electrode terminal are in contact is not uniform, the surface contact between the conductive layer and the electrode terminal is not uniform, so that There is a problem that a uniform electric field is not formed and thus a high quality polycrystalline silicon thin film cannot be formed.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object thereof is to provide a polycrystalline silicon thin film manufacturing apparatus and an electric field applying apparatus capable of forming a uniform polycrystalline silicon thin film by forming a uniform electric field in a conductive layer.

According to an embodiment of the present invention, a power supply unit including an electrode terminal for applying power to a conductive layer, and spaced apart from the electrode terminal, a pad including n conductive pads, where n is an integer of 2 or more. Including a portion, The pad portion provides an electric field applying apparatus, characterized in that for rotating a virtual straight line parallel to the longitudinal direction of the electrode terminal as a rotation axis.

According to another embodiment of the present invention, a chamber, a substrate stage provided at one side inside the chamber, and a substrate stage including a conductive layer is located, installed at the other inner side of the chamber to face the substrate stage, and toward the substrate stage side. A power supply unit including an electrode terminal moved to apply power to the conductive layer, and a pad disposed between the substrate stage and the electrode terminal, wherein n pads (where n is an integer of 2 or more) Including a portion, the pad portion provides an electric field applying apparatus, characterized in that for rotating as an axis of rotation a virtual straight line parallel to the longitudinal direction of the electrode terminal.

Polycrystalline silicon thin film manufacturing apparatus and field application device according to the technical idea of the present invention can form a uniform electric field in the conductive layer to form a high quality polycrystalline silicon thin film, the life of the device is increased.

1A and 1B are schematic cross-sectional views illustrating a conventional polycrystalline silicon thin film manufacturing apparatus;
FIG. 2A is a schematic perspective view illustrating the apparatus for manufacturing a polycrystalline silicon thin film according to the present invention, FIG. 2B is a cross-sectional view taken along the line II ′ of FIG. 2A, and FIG. 2C is a cross-sectional view showing the surface contact between the conductive layer and the conductive pad. ,
3A to 3C are schematic cross-sectional views showing an apparatus for manufacturing a polycrystalline silicon thin film according to the spirit of the present invention;
4A to 4F are a plan view and a perspective view of a pad unit according to the spirit of the present invention;
5 is an exploded perspective view illustrating driving and control of a pad unit according to an exemplary embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.

FIG. 2A is a schematic perspective view illustrating the apparatus for manufacturing a polycrystalline silicon thin film according to the present invention, FIG. 2B is a cross-sectional view taken along the line II ′ of FIG. 2A, and FIG. 2C is a cross-sectional view showing the surface contact between the conductive layer and the conductive pad. to be.

First, referring to FIGS. 2A and 2B, an amorphous silicon film 12, an insulating film 13, and a conductive layer 14 are sequentially formed on a substrate 11, and an electric field is applied to the conductive layer 14. High Joules are generated by inducing Joule heating to crystallize the amorphous silicon film 14 by the high heat.

The material of the substrate 11 is not particularly limited. For example, a transparent substrate material such as glass, quartz, plastic, or the like may be used, and glass is more preferable in terms of economy.

The amorphous silicon film 12 may be formed by, for example, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD), sputtering, vacuum evaporation, or the like.

The insulating layer 13 may serve to prevent the amorphous silicon film 12 from being contaminated by the conductive layer 14 during the heat treatment process and to insulate the TFT device. In general, silicon oxide (SiO 2 ), It can be formed by depositing silicon nitride.

The conductive layer 14 may be formed of a transparent conductive thin film or a metal thin film. Specifically, the transparent conductive thin film may use indium tin oxide (ITO), indium zinc oxide (IZO), or the like. Mo, Ti, Cr, Al, Cu, Au, Ag, Pd or MoW may be used, but the material of the conductive layer is not limited in the present invention.

The conductive layer 14 may be formed by a method such as sputtering or evaporation, and may be formed at 500 kPa to 3000 kPa. But it is not limited to that.

In the present invention, as described above, by applying an electric field to the conductive layer 14 generates Joule heating, Joule heating is to heat using the heat generated by the resistance when the current flows through the conductor Means that.

That is, the amount of energy per unit time applied to the conductive layer 14 by Joule heating due to the application of the electric field may be represented by the following equation.

W = V × I

In the above formula, W is the amount of energy per unit time of Joule heating, V is the voltage across the conductive layer 14, and I is the current, respectively.

From the above equation, it can be seen that as the voltage V increases and / or the current I increases, the amount of energy per unit time applied to the conductive layer 14 by Joule heating increases. When the temperature of the conductive layer 14 rises by Joule heating, the amorphous silicon film 12 crystallizes into a polysilicon film by the high heat.

In this case, since the application of the electric field is determined by various factors such as resistance, length and thickness of the conductive layer 14, it is difficult to be specified, but about 100 W / cm 2 to 1,000,000 W / cm 2 May be enough. In addition, the applied current may be direct current or alternating current, and the application time of the electric field may be 1 / 10,000,000 to 10 seconds continuously applied. The application of this electric field can be repeated several times in regular or irregular units.

In this case, applying the electric field to the conductive layer 14 is applied through the electrode terminal 135 installed in the polycrystalline silicon thin film manufacturing apparatus, in the present invention is conductive between the conductive layer 14 and the electrode terminal 135 It characterized in that it comprises a pad (173).

The conductive pad 173 is a liquid polymer such as polyurethane, silicone, or the like, in which a single or at least two or more kinds of highly conductive metal powders such as gold, silver, copper, nickel, silver / glass, and silver / copper are mixed. It is dispersed and mixed in resin, mixed together, and manufactured in a plate shape, and has conductivity and cushioning force.

Thus, by including the conductive pad 173 having conductivity and cushioning force between the conductive layer 14 and the electrode terminal 135, the apparatus for producing a polycrystalline silicon thin film of the present invention is shown in Figure 2c Likewise, even if the surface where the conductive layer 14 and the electrode terminal 135 contact each other is not uniform, even surface contact is possible by the conductive pad 173, so that a uniform electric field can be formed in the conductive layer 14. have.

Meanwhile, as described above, the conductive pad 173 in surface contact with the conductive layer 14 is about 100 W / cm 2 to 1,000,000 W / cm 2. A high voltage with a degree of power density is applied. In this case, the conductive pad 173 is more easily degraded than other parts of the polycrystalline silicon thin film manufacturing apparatus 100. That is, a problem of aging and replacement of the device due to deterioration of the conductive pad 173 occurs. As described later, the conductive pad 173 is rotated to alternately apply a voltage to the conductive pad 173. It can extend the life. In addition, when one conductive pad 173 is deteriorated, the trouble of having to replace the conductive pad 173 one by one can be reduced.

3A and 3B are schematic cross-sectional views illustrating an apparatus 100 for manufacturing a polycrystalline silicon thin film according to the inventive concept.

3A and 3B, the polycrystalline silicon thin film manufacturing apparatus 100 according to the present invention includes a chamber 110, a substrate stage 120 installed below the chamber 110, and an upper portion of the chamber 110. It may include a power supply unit 130 is installed in, and may include a pad unit 170 located between the substrate stage 120 and the power supply unit 130. The substrate stage 120 and the power applying unit 130 may be installed to face each other.

The chamber 110 provides a process progress space enclosed therein to allow the polycrystalline silicon thin film manufacturing process to proceed.

The substrate stage 120 is a device for aligning and fixing the substrate 50 at an accurate position so that a polycrystalline silicon thin film manufacturing process may be performed on the loaded substrate 50.

In this case, the substrate 50 to be loaded is positioned on the upper surface of the substrate stage 120, and the substrate 50 may include an amorphous silicon film, an insulating film, and a conductive layer as described above.

In addition, the substrate stage 120 may include one or a plurality of adsorption holes 121 formed to be exposed to an upper surface thereof.

The suction hole may be connected to the vacuum unit 150 through the vacuum line 151, and the vacuum unit 150 may be connected to the suction hole 121 through the vacuum line 151 in the substrate stage 120. It provides a vacuum for adsorption fixing the substrate 50 located on the upper surface of the.

Meanwhile, the substrate stage 120 may further include a stage moving unit 122 connected to the lower portion. In the stage movement unit 122, the conductive layer of the substrate 50 may contact the conductive pad 173 that is closest to the substrate stage among the conductive pads 171, 172, and 173 of the pad unit 170. The substrate stage 120 may be moved toward the power applying unit 130 so that the substrate stage 120 may move.

The power applying unit 130 is a device for applying power to the conductive layer of the substrate 50 aligned and fixed to the substrate stage 120. The power applying unit 130 may include an electrode holder moving unit 131 installed above the chamber 110 and an electrode terminal 135 connected to the electrode holder moving unit 131.

The electrode holder moving unit 131 is connected to a cylinder 132 fixed to an upper portion of the chamber 110, a piston 133 and a piston 133 which are reciprocally moved at a predetermined distance by being coupled to the cylinder 132. And an electrode holder 134 to be installed, and the electrode holder 134 may be a flat plate integrally formed with the piston 133.

Meanwhile, the electrode terminal 135 may include two terminals 136 and 137 of a positive electrode and a negative electrode. The electrode terminal 135 may be lowered by the electrode holder moving unit 131. After the substrate 50 is seated on the substrate stage 120, the electrode terminal 135 is lowered by the electrode terminal 135, so that the electrode support 135 is the pad support 177 of the pad part 170 or the conductive pads. It is possible to directly contact the conductive pad 173 closest to the substrate among the 171, 172, and 173.

Meanwhile, the electrode terminal 135 of the electrode holder 134 may be opposed to the substrate stage 120 of the electrode holder 134 so as to apply power to the conductive layer of the substrate 50. It may be installed on the lower surface.

The electrode terminal 135 is installed such that two electrodes 136 and 137 having different polarities are maintained at a constant interval, and are electrically connected to the power supply unit 160 via the power line 161. The power supply unit 160 supplies power for applying to the conductive thin film of the substrate 50 to the electrode terminal 135 through the power line 161.

The pad unit 170 may include conductive pads 171, 172, and 173 and a pad support 177 that may support the conductive pads 171, 172, and 173. The pad support 177 has a shape similar to an equilateral triangle when the number of the conductive pads is three, and has a shape similar to the regular pentagonal column when the number of the conductive pads is five. The pad support 177 may be formed of a conductive material, and the pad support 177 may be electrically connected to the electrode terminal 135 and the conductive pads 171, 172, and 173 so as to transfer power, and is limited in shape and material. There is no

Referring to FIG. 3A, FIG. 3A shows that the pad unit 170 includes three conductive pads 171, 172, and 173. The pad support 177 may have a shape of an equilateral triangular prism with flat corners. The conductive pads 171, 172, and 173 may be attached along three edges of the pad support 177, respectively. Since the conductive pads 171, 172, and 173 have elasticity and ductility to some extent as described above, the conductive pads 171, 172, and 173 are attached to the pad support 177 to thereby form the electrode terminal. Mechanical deformation can be prevented when in contact with.

Meanwhile, among the conductive pads 171, 172, and 173, the conductive pad 173 that is closest to the substrate 50 may be in surface contact with the substrate 50 by raising the substrate stage 120. . Thereafter, the electrode holder 134 may be lowered by the electrode holder moving unit 131. As the electrode holder 134 is lowered, the electrode terminal 135 connected to the lower portion of the electrode holder 134 may also be lowered. When the electrode terminal 135 is lowered, the electrode terminal 135 may have a surface 173 ′ facing the conductive pad 173 closest to the substrate 50 among three surfaces of the pad support 177. Can be contacted. Thereafter, an electric field applied from the power supply unit 160 is transferred to the pad support 177 through the electrode terminal 135, and the electric field is contacted through the conductive pad 173 in contact with the pad support 177. Transferred to the substrate 50.

Meanwhile, referring to FIG. 3B, the electrode holder 134 may further include an electrode movement unit 139. That is, the electrode holder 134 may be lowered as close as possible without being in contact with the conductive pads 171 and 172 farthest from the substrate stage 120 by the electrode holder moving unit 131. Thereafter, the electrode movement unit 139 may lower the electrode terminal 135 so that the electrode terminal 135 may contact the pad support 177.

The polycrystalline silicon thin film manufacturing apparatus 100 may further include an alignment check unit 140 installed in the chamber 110. The alignment check unit 140 is a device for monitoring the alignment state of the substrate stage 120 and the substrate 50 from the outside and may be installed on an inner wall of the chamber 110.

Of course, the alignment check unit 140 may be installed anywhere in the chamber 110 to monitor the alignment of the substrate stage 120 and the substrate 50.

In addition, when the electrode terminal 135 contacts the substrate 50 via the conductive pad 173 in order to apply power to the substrate 50, the alignment check unit 140 may contact the substrate 50. The alignment between the 50 and the conductive pad 173 and the electrode terminal 135 may be monitored.

Therefore, the alignment check unit 140 is installed to monitor the preset positions, for example, corners of the substrate 50, to check the alignment state.

In addition, the alignment check unit 140 is in an alignment state of the substrate stage 120 and the substrate 50 and an alignment state of the substrate 50, the pad unit 170, and the electrode terminal 135. In addition, the entire process of the crystallization process can be monitored.

The polycrystalline silicon thin film manufacturing apparatus 100 may include a pad unit 170 positioned between the substrate stage 120 and the electrode terminal 135 and including conductive pads 171, 172, and 173. have. The substrate stage 120, the pad unit 170, and the electrode terminal 135 may be spaced apart from each other in the chamber 110. The pad part 170 may be installed at a central portion of the chamber 110 in correspondence with the electrode terminal 135.

3C illustrates a pad unit 170 and a polycrystalline silicon thin film manufacturing apparatus 100 in which the electrode terminal 135 is lowered to directly contact the conductive pad 173 closest to the substrate 50 among the conductive pads. It shows a schematic cross section of. Referring to FIG. 3C, the pad unit 170 may not include the pad support 177, and may instead include a support for fixing both ends of the conductive pads 171, 172, and 173. Can be.

When the substrate 50 is seated on the substrate stage 120, the electrode holder 134 may be lowered by the electrode holder moving unit 131. As the electrode holder 134 is lowered, the electrode terminal 135 connected to the lower portion of the electrode holder 134 may also be lowered. The electrode terminal 135 contacts the conductive pad 173 closest to the substrate stage among the conductive pads by the lowering of the electrode terminal 135. The distance between the surface level of the conductive pad 173 closest to the substrate stage 120 and the surface level of the conductive pads 171 and 172 farthest from the substrate stage 120, that is, the height difference is t2. Becomes The height t1 of the electrode terminal 135 may be greater than t2.

Referring again to FIGS. 3A to 3C, the pad unit 170 may include n conductive pads 171, 172, and 173, where n is an integer of 2 or more. The conductive pads 173 closest to the substrate stage 120 among the conductive pads 171, 172, and 173 may be vertically aligned with the electrode terminal 135 and the substrate stage 120, respectively.

On the other hand, the pad unit 170 may rotate by using a virtual straight line parallel to the longitudinal direction of the electrode terminal 135 as the rotation axis (R).

4A is a schematic plan view of the pad unit 170, and FIG. 4B is a perspective view schematically illustrating the pad unit 170.

4A and 4B, the pad unit 170 includes n conductive pads 171, 172, and 173 and n is an integer of 2 or more, and the conductive pads 171, 172, and 173. It may include a pad support 177 for supporting. 4A to 4B illustrate the case where the number of the conductive pads 171, 172, and 173 is three. However, the number of the conductive pads included in the pad unit 170 is limited if n is an integer of 2 or more. none. The pad supporter 177 may fix the conductive pads 171, 172, and 173, and may transfer an electric field applied to the electrode terminal 135 to the conductive pads 171, 172, and 173. .

The pad support part 177 has a structure in which a corner parallel to the rotation axis R is flat in a n-square pillar, and the conductive pads 171, 172, and 173 may contact the corner part. . For example, when the number of the conductive pads 171, 172, and 173 is 3, the pad support 177 may have a shape of an equilateral triangle pillar. The conductive pads 171, 172, and 173 may be fixed to contact edge portions parallel to the rotation axis R of the edges of the pad support 177, respectively. Accordingly, the edge portion of the pad support 177 may be flat so that the conductive pads 171, 172, and 173 may contact each other.

The conductive pads 171, 172, and 173 may be spaced apart from each other by a predetermined angle θ on the pad support 177. That is, the straight lines connecting the rotation axis R of the pad unit 170 and the conductive pads 171, 172, and 173 vertically may form a constant angle θ. Here, the constant angle θ may be 360 ° / n. For example, as illustrated in FIGS. 4A and 4B, when n = 3, the conductive pads 171, 172, and 173 may be spaced apart by 120 ° and formed on the pad support 177. .

The pad unit 170 may rotate using an imaginary straight line parallel to the length direction of the electrode terminal 135 as the rotation axis R. FIG. For example, the pad support 177 is rotated by a predetermined angle θ about an imaginary rotation axis R vertically penetrating the center of the pad support 177 in the longitudinal direction of the pad support 177. In addition, the conductive pads 171, 172, and 173 that are supported and fixed to the pad support 177 are also rotated by a predetermined angle θ while drawing concentric circles. Here, the pad support 177 may rotate by 360 ° / n. That is, the conductive pads 171, 172, and 173 may rotate by a spaced angle θ. The rotation direction of the pad support 177 may be clockwise or counterclockwise.

Initially, the conductive pad 173 closest to the substrate stage 120 among the conductive pads 171, 172, and 173 is aligned in parallel with the substrate stage 120 and the electrode terminal 135, respectively. Subsequently, after the electric field is applied to the conductive pad 173 through the pad support 177, the pad support 177 rotates by a predetermined angle θ, so that the conductive pad is adjacent to the conductive pad 173. One of 171 and 172 may be aligned in parallel with the substrate stage 120 and the electrode terminal 135, respectively. Thereafter, an electric field may be applied to one of the conductive pads 171 and 172 again.

4C is a cross-sectional view of the pad unit 170 including five conductive pads 173. 4C illustrates that the number of the conductive pads, that is, n = 5, allows the pad support 177 to have a pentagonal pillar shape. Corners of the pad support 177 may be flat so that the conductive pads 173 may be attached. The conductive pads 173 may be spaced apart by 72 ° from each other to be formed at an edge portion of the pad support 177. The pad support 177 may rotate by 72 ° about an imaginary rotational axis R vertically penetrating the center of the pad support 177 in the longitudinal direction of the pad support 177.

4D to 4F are schematic cross-sectional views and perspective views of the pad unit 170 configured to allow the electrode terminal 135 to directly contact the conductive pad 135. 4D to 4F, the pad unit 170 includes n conductive pads 171, 172, and 173 and n is an integer of 2 or more, and the conductive pads 171, 172, and 173. It may include a support 178 for supporting. The support 178 may contact both ends of the conductive pads 171, 172, and 173. 4D to 4F illustrate three conductive pads 171, 172, and 173.

4D and 4E show that the support 178 is formed in a disk shape, and FIG. 4F shows that the support 178 is formed as an equilateral triangle pillar. The support 178 may be formed of an insulating material that is insulated from the conductive pads 171, 172, and 173. If the support 178 supports the conductive pads 171, 172, and 173, the support 178 may be limited in form or type. none.

The conductive pads 171, 172, and 173 may be spaced apart from each other by a predetermined angle θ on the support 178. That is, the straight lines connecting the rotation axis R of the pad unit 170 and the conductive pads 171, 172, and 173 vertically may form a constant angle θ. Here, the constant angle θ may be 360 ° / n. For example, as shown in FIGS. 4A to 4F, when n = 3, the conductive pads 171, 172, and 173 may be spaced apart by 120 ° and formed on the support 178.

The rotation of the support 178 of FIGS. 4D to 4F is the same as that described with reference to FIGS. 4A to 4C. Therefore, repeated description is omitted.

5 is a perspective view illustrating rotational driving and control of the pad unit 170.

Referring to FIG. 5, the pad part 170 may be connected to the driving part 800 fixed to the inner wall of the chamber 110 at one side end. The driving unit 800 is a device that imparts rotational force to the support 178 of the pad unit 170. 5 illustrates that the driving unit 800 is a driving motor, but the type of the driving unit 800 is not particularly limited as long as it provides a rotational force to the pad unit 170. The rotation axis of the drive motor 800 may coincide with the rotation axis R of the pad unit 170. The pad unit 170 connected to the driving motor 800 may also be fixed to the chamber 110.

On the other hand, the driving unit 800 is electrically connected to the control unit 850 installed on the outside of the chamber 110, it may send and receive a control signal. The controller 850 may calculate a replacement time of the conductive pad 173 and may transmit an electrical signal to the driver 800 when the conductive pad 173 needs to be replaced. The driver 800 receiving the electrical signal rotates the pad unit 170, and the conductive pad 173 may be replaced by the rotation of the pad unit 170.

Rotation of the pad unit 170 may be performed when any one of the conductive pads 173 is completely aged, but may be rotated at an appropriate time during the process even when the conductive pads 173 are not fully aged. . In this case, the conductive pads 171, 172, and 173 may be repeatedly used.

As mentioned above, although the present invention has been described with reference to the illustrated embodiments, it is only an example, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the scope of the present invention should be defined by the appended claims and their equivalents.

50: substrate
100: polycrystalline silicon thin film manufacturing apparatus 110: chamber
120: substrate stage 130: power supply unit
140: alignment check unit 135: electrode terminal
170: pad portion
171, 172, 173: conductive pad
178: support

Claims (24)

A power supply unit formed in the longitudinal direction and including an electrode terminal for applying power to the conductive layer; And
A pad part including n pads (where n is an integer of 2 or more) that is spaced apart from the electrode terminal and is supported along the column while being spaced apart from each other on the outside of the pad support and the pad support. Including,
And said pad portion rotates using an imaginary straight line parallel to the longitudinal direction of said electrode terminal as a rotation axis. The method of claim 1,
And the number of the conductive pads is three or five. The method of claim 1,
The conductive pads may include at least one of gold, silver, copper, nickel, silver / glass, and silver / copper, and at least one of polyurethane and silicon. The method of claim 1,
And a substrate stage spaced apart from the pad part and having a substrate including a conductive layer. The method of claim 4, wherein
And the conductive pads closest to the substrate stage of the conductive pads are aligned in parallel with the substrate stage and the electrode terminal, respectively. The method of claim 4, wherein
The electric power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. . The method of claim 4, wherein
And a stage moving unit connected to the substrate stage and moving the substrate stage to the electrode terminal side such that the conductive layer of the substrate may be in contact with the conductive pad closest to the substrate stage among the conductive pads. An electric field applying device. The method of claim 1,
The conductive pads are each spaced 360 ° / n spaced apart is supported by the pad support unit. The method of claim 8,
And the pad support portion comprises a conductive material. The method of claim 8,
The pad support part has a structure in which a corner parallel to the rotation axis in the n-square pillar has a flat corner portion, and the conductive pads are formed in contact with the corner portion. The method of claim 8,
Power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads through the pad support, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. Electric field application device. The method of claim 1,
The pad unit rotates by 360 ° / n. The method of claim 1,
The electric field applying device is characterized in that the polycrystalline silicon thin film manufacturing apparatus. chamber;
A substrate stage installed at one side of the chamber and having a substrate including a conductive layer;
A power supply unit installed at the other side of the chamber to face the substrate stage, the power supply unit including an electrode terminal moved to the substrate stage to supply power to the conductive layer and to be formed in a length direction; And
Located between the substrate stage and the electrode terminal, and includes a plurality of conductive pads (where n is an integer of 2 or more), which is long along the column while being spaced apart from each other outside the columnar pad support and the pad support. To include a pad portion,
And said pad portion rotates using an imaginary straight line parallel to the longitudinal direction of said electrode terminal as a rotation axis. 15. The method of claim 14,
The conductive pads are respectively spaced apart by 360 ° / n and supported by the pad support, and the pad support rotates by 360 ° / n. The method of claim 15,
The pad support part has a structure in which a corner parallel to the rotation axis in the n-square pillar has a flat corner portion, and the conductive pads are formed in contact with the corner portion. The method of claim 15,
Power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads through the pad support, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. An electric field applying device. 15. The method of claim 14,
And the number of the conductive pads is three or five. 15. The method of claim 14,
The conductive pads may include at least one of gold, silver, copper, nickel, silver / glass, and silver / copper, and at least one of polyurethane and silicon. 15. The method of claim 14,
The substrate further comprises an amorphous silicon film. 15. The method of claim 14,
The pad unit is spaced apart from the substrate stage and the electrode terminal. 15. The method of claim 14,
And the conductive pads closest to the substrate stage of the conductive pads are aligned in parallel with the substrate stage and the electrode terminal, respectively. 15. The method of claim 14,
The electric power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. . 15. The method of claim 14,
The electric field applying device is characterized in that the polycrystalline silicon thin film manufacturing apparatus.
KR1020100096860A 2010-10-05 2010-10-05 Apparatus for manufacturing poly-silicon thin film KR101155605B1 (en)

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JP2002313792A (en) 2001-04-17 2002-10-25 Seiko Epson Corp Semiconductor device and its manufacturing method

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JP3812232B2 (en) * 1998-10-23 2006-08-23 日新電機株式会社 Polycrystalline silicon thin film forming method and thin film forming apparatus
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