KR101155605B1 - Apparatus for manufacturing poly-silicon thin film - Google Patents
Apparatus for manufacturing poly-silicon thin film Download PDFInfo
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- KR101155605B1 KR101155605B1 KR1020100096860A KR20100096860A KR101155605B1 KR 101155605 B1 KR101155605 B1 KR 101155605B1 KR 1020100096860 A KR1020100096860 A KR 1020100096860A KR 20100096860 A KR20100096860 A KR 20100096860A KR 101155605 B1 KR101155605 B1 KR 101155605B1
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- conductive pads
- substrate stage
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- electrode terminal
- conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Provides an electric field applying device comprising a power supply unit including an electrode terminal for applying power to the conductive layer, a pad portion which is spaced apart from the electrode terminal, and n pads (where n is an integer of 2 or more). do.
Here, the pad part may rotate with an imaginary straight line parallel to the longitudinal direction of the electrode terminal as the rotation axis.
Description
The present invention relates to a polycrystalline silicon thin film manufacturing apparatus and an electric field applying apparatus for generating joule heat by applying power to a substrate and thereby producing a polycrystalline silicon thin film.
In general, amorphous silicon (a-Si) has disadvantages of low mobility and opening ratio of electrons, which are charge carriers, and incompatibility with CMOS processes. On the other hand, in the poly-silicon thin film device, it is possible to configure a driving circuit on the substrate like the pixel TFT-array, which is necessary for writing an image signal to the pixel, which was not possible in the amorphous silicon TFT (a-Si TFT). . Therefore, in the polycrystalline silicon thin film element, the connection between the plurality of terminals and the driver IC becomes unnecessary, so that the productivity and reliability can be increased and the thickness of the panel can be reduced. In addition, in the polycrystalline silicon TFT process, since the microfabrication technology of silicon LSI can be used as it is, a microstructure can be formed in wiring etc. Therefore, since there is no pitch constraint on the TAB mounting of the driver IC seen in the amorphous silicon TFT, pixel reduction is easy and a large number of pixels can be realized with a small field of view. The thin film transistor using polycrystalline silicon in the active layer has a high switching capability and the channel position of the active layer is determined by self-matching, compared with the thin film transistor using amorphous silicon, so that device miniaturization and CMOS are possible. For this reason, polycrystalline silicon thin film transistors are used as pixel switch elements in active matrix type flat panel displays (e.g., liquid crystal displays, organic ELs), and the like. It is emerging as a major device.
On the other hand, the inventors of the present invention in Korea Patent Application No. 2007-0021252 has proposed a method for crystallization by heating the joule by applying an electric field after interposing a conductive thin film on or below the silicon thin film.
FIG. 1A is a schematic cross-sectional view illustrating a conventional method of manufacturing a polycrystalline silicon thin film, and FIG. 1B is an enlarged view illustrating an enlarged area “A” of FIG. 1.
First, referring to FIG. 1A, in the conventional method of manufacturing a polycrystalline silicon thin film, an
Thereafter, an electric field is applied to the
However, in the conventional method of manufacturing a polycrystalline silicon thin film, as shown in FIG. 1B, when the surface where the conductive layer and the electrode terminal are in contact is not uniform, the surface contact between the conductive layer and the electrode terminal is not uniform, so that There is a problem that a uniform electric field is not formed and thus a high quality polycrystalline silicon thin film cannot be formed.
SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object thereof is to provide a polycrystalline silicon thin film manufacturing apparatus and an electric field applying apparatus capable of forming a uniform polycrystalline silicon thin film by forming a uniform electric field in a conductive layer.
According to an embodiment of the present invention, a power supply unit including an electrode terminal for applying power to a conductive layer, and spaced apart from the electrode terminal, a pad including n conductive pads, where n is an integer of 2 or more. Including a portion, The pad portion provides an electric field applying apparatus, characterized in that for rotating a virtual straight line parallel to the longitudinal direction of the electrode terminal as a rotation axis.
According to another embodiment of the present invention, a chamber, a substrate stage provided at one side inside the chamber, and a substrate stage including a conductive layer is located, installed at the other inner side of the chamber to face the substrate stage, and toward the substrate stage side. A power supply unit including an electrode terminal moved to apply power to the conductive layer, and a pad disposed between the substrate stage and the electrode terminal, wherein n pads (where n is an integer of 2 or more) Including a portion, the pad portion provides an electric field applying apparatus, characterized in that for rotating as an axis of rotation a virtual straight line parallel to the longitudinal direction of the electrode terminal.
Polycrystalline silicon thin film manufacturing apparatus and field application device according to the technical idea of the present invention can form a uniform electric field in the conductive layer to form a high quality polycrystalline silicon thin film, the life of the device is increased.
1A and 1B are schematic cross-sectional views illustrating a conventional polycrystalline silicon thin film manufacturing apparatus;
FIG. 2A is a schematic perspective view illustrating the apparatus for manufacturing a polycrystalline silicon thin film according to the present invention, FIG. 2B is a cross-sectional view taken along the line II ′ of FIG. 2A, and FIG. 2C is a cross-sectional view showing the surface contact between the conductive layer and the conductive pad. ,
3A to 3C are schematic cross-sectional views showing an apparatus for manufacturing a polycrystalline silicon thin film according to the spirit of the present invention;
4A to 4F are a plan view and a perspective view of a pad unit according to the spirit of the present invention;
5 is an exploded perspective view illustrating driving and control of a pad unit according to an exemplary embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.
FIG. 2A is a schematic perspective view illustrating the apparatus for manufacturing a polycrystalline silicon thin film according to the present invention, FIG. 2B is a cross-sectional view taken along the line II ′ of FIG. 2A, and FIG. 2C is a cross-sectional view showing the surface contact between the conductive layer and the conductive pad. to be.
First, referring to FIGS. 2A and 2B, an
The material of the
The
The
The
The
In the present invention, as described above, by applying an electric field to the
That is, the amount of energy per unit time applied to the
W = V × I
In the above formula, W is the amount of energy per unit time of Joule heating, V is the voltage across the
From the above equation, it can be seen that as the voltage V increases and / or the current I increases, the amount of energy per unit time applied to the
In this case, since the application of the electric field is determined by various factors such as resistance, length and thickness of the
In this case, applying the electric field to the
The
Thus, by including the
Meanwhile, as described above, the
3A and 3B are schematic cross-sectional views illustrating an
3A and 3B, the polycrystalline silicon thin
The
The
In this case, the
In addition, the
The suction hole may be connected to the
Meanwhile, the
The
The electrode holder moving unit 131 is connected to a
Meanwhile, the
Meanwhile, the
The
The
Referring to FIG. 3A, FIG. 3A shows that the
Meanwhile, among the
Meanwhile, referring to FIG. 3B, the
The polycrystalline silicon thin
Of course, the
In addition, when the
Therefore, the
In addition, the
The polycrystalline silicon thin
3C illustrates a
When the
Referring again to FIGS. 3A to 3C, the
On the other hand, the
4A is a schematic plan view of the
4A and 4B, the
The
The
The
Initially, the
4C is a cross-sectional view of the
4D to 4F are schematic cross-sectional views and perspective views of the
4D and 4E show that the
The
The rotation of the
5 is a perspective view illustrating rotational driving and control of the
Referring to FIG. 5, the
On the other hand, the driving
Rotation of the
As mentioned above, although the present invention has been described with reference to the illustrated embodiments, it is only an example, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the scope of the present invention should be defined by the appended claims and their equivalents.
50: substrate
100: polycrystalline silicon thin film manufacturing apparatus 110: chamber
120: substrate stage 130: power supply unit
140: alignment check unit 135: electrode terminal
170: pad portion
171, 172, 173: conductive pad
178: support
Claims (24)
A pad part including n pads (where n is an integer of 2 or more) that is spaced apart from the electrode terminal and is supported along the column while being spaced apart from each other on the outside of the pad support and the pad support. Including,
And said pad portion rotates using an imaginary straight line parallel to the longitudinal direction of said electrode terminal as a rotation axis.
And the number of the conductive pads is three or five.
The conductive pads may include at least one of gold, silver, copper, nickel, silver / glass, and silver / copper, and at least one of polyurethane and silicon.
And a substrate stage spaced apart from the pad part and having a substrate including a conductive layer.
And the conductive pads closest to the substrate stage of the conductive pads are aligned in parallel with the substrate stage and the electrode terminal, respectively.
The electric power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. .
And a stage moving unit connected to the substrate stage and moving the substrate stage to the electrode terminal side such that the conductive layer of the substrate may be in contact with the conductive pad closest to the substrate stage among the conductive pads. An electric field applying device.
The conductive pads are each spaced 360 ° / n spaced apart is supported by the pad support unit.
And the pad support portion comprises a conductive material.
The pad support part has a structure in which a corner parallel to the rotation axis in the n-square pillar has a flat corner portion, and the conductive pads are formed in contact with the corner portion.
Power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads through the pad support, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. Electric field application device.
The pad unit rotates by 360 ° / n.
The electric field applying device is characterized in that the polycrystalline silicon thin film manufacturing apparatus.
A substrate stage installed at one side of the chamber and having a substrate including a conductive layer;
A power supply unit installed at the other side of the chamber to face the substrate stage, the power supply unit including an electrode terminal moved to the substrate stage to supply power to the conductive layer and to be formed in a length direction; And
Located between the substrate stage and the electrode terminal, and includes a plurality of conductive pads (where n is an integer of 2 or more), which is long along the column while being spaced apart from each other outside the columnar pad support and the pad support. To include a pad portion,
And said pad portion rotates using an imaginary straight line parallel to the longitudinal direction of said electrode terminal as a rotation axis.
The conductive pads are respectively spaced apart by 360 ° / n and supported by the pad support, and the pad support rotates by 360 ° / n.
The pad support part has a structure in which a corner parallel to the rotation axis in the n-square pillar has a flat corner portion, and the conductive pads are formed in contact with the corner portion.
Power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads through the pad support, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. An electric field applying device.
And the number of the conductive pads is three or five.
The conductive pads may include at least one of gold, silver, copper, nickel, silver / glass, and silver / copper, and at least one of polyurethane and silicon.
The substrate further comprises an amorphous silicon film.
The pad unit is spaced apart from the substrate stage and the electrode terminal.
And the conductive pads closest to the substrate stage of the conductive pads are aligned in parallel with the substrate stage and the electrode terminal, respectively.
The electric power supplied to the electrode terminal is applied to the conductive pads closest to the substrate stage among the conductive pads, and an electric field is applied to the conductive layer through the conductive pads closest to the substrate stage. .
The electric field applying device is characterized in that the polycrystalline silicon thin film manufacturing apparatus.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100096860A KR101155605B1 (en) | 2010-10-05 | 2010-10-05 | Apparatus for manufacturing poly-silicon thin film |
PCT/KR2011/007353 WO2012047008A2 (en) | 2010-10-05 | 2011-10-05 | Method for manufacturing a polycrystalline silicon thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100096860A KR101155605B1 (en) | 2010-10-05 | 2010-10-05 | Apparatus for manufacturing poly-silicon thin film |
Publications (2)
Publication Number | Publication Date |
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KR20120035372A KR20120035372A (en) | 2012-04-16 |
KR101155605B1 true KR101155605B1 (en) | 2012-06-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020100096860A KR101155605B1 (en) | 2010-10-05 | 2010-10-05 | Apparatus for manufacturing poly-silicon thin film |
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KR (1) | KR101155605B1 (en) |
WO (1) | WO2012047008A2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313792A (en) | 2001-04-17 | 2002-10-25 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3812232B2 (en) * | 1998-10-23 | 2006-08-23 | 日新電機株式会社 | Polycrystalline silicon thin film forming method and thin film forming apparatus |
KR20030017202A (en) * | 2001-08-24 | 2003-03-03 | 히다찌 케이블 리미티드 | Crystalline silicon thin film semiconductor device, crystalline silicon thin film photovoltaic device, and process for producing crystalline silicon thin film semiconductor device |
KR20090084237A (en) * | 2008-01-31 | 2009-08-05 | 주식회사 엔씰텍 | Apparatus and method for manufacturing poly-si thin film |
-
2010
- 2010-10-05 KR KR1020100096860A patent/KR101155605B1/en not_active IP Right Cessation
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2011
- 2011-10-05 WO PCT/KR2011/007353 patent/WO2012047008A2/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313792A (en) | 2001-04-17 | 2002-10-25 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
Also Published As
Publication number | Publication date |
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WO2012047008A3 (en) | 2012-06-21 |
WO2012047008A2 (en) | 2012-04-12 |
KR20120035372A (en) | 2012-04-16 |
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