KR101104536B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101104536B1
KR101104536B1 KR1020090059296A KR20090059296A KR101104536B1 KR 101104536 B1 KR101104536 B1 KR 101104536B1 KR 1020090059296 A KR1020090059296 A KR 1020090059296A KR 20090059296 A KR20090059296 A KR 20090059296A KR 101104536 B1 KR101104536 B1 KR 101104536B1
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KR
South Korea
Prior art keywords
baffle plate
exhaust
downstream
openings
processing apparatus
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Application number
KR1020090059296A
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English (en)
Korean (ko)
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KR20100003708A (ko
Inventor
세이지 다나카
츠토무 사토요시
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20100003708A publication Critical patent/KR20100003708A/ko
Application granted granted Critical
Publication of KR101104536B1 publication Critical patent/KR101104536B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020090059296A 2008-07-01 2009-06-30 플라즈마 처리 장치 KR101104536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-171948 2008-07-01
JP2008171948A JP5086192B2 (ja) 2008-07-01 2008-07-01 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20100003708A KR20100003708A (ko) 2010-01-11
KR101104536B1 true KR101104536B1 (ko) 2012-01-11

Family

ID=41514141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090059296A KR101104536B1 (ko) 2008-07-01 2009-06-30 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP5086192B2 (ja)
KR (1) KR101104536B1 (ja)
CN (1) CN101620972B (ja)
TW (1) TW201015636A (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272551A (ja) * 2009-05-19 2010-12-02 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
CN102732860B (zh) * 2011-04-14 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔及具有其的化学气相沉积设备
KR101814013B1 (ko) * 2011-05-09 2018-01-03 삼성디스플레이 주식회사 플라스마 장치
KR101963862B1 (ko) * 2011-05-31 2019-03-29 어플라이드 머티어리얼스, 인코포레이티드 에지, 측면 및 후면 보호를 갖는 건식 식각을 위한 장치 및 방법들
CN102828167B (zh) * 2011-06-13 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种排气方法、装置及基片处理设备
KR101356664B1 (ko) * 2012-02-03 2014-02-05 주식회사 유진테크 측방배기 방식 기판처리장치
TWI449080B (zh) * 2012-07-25 2014-08-11 Au Optronics Corp 電漿反應機台
WO2014062323A1 (en) * 2012-10-18 2014-04-24 Applied Materials, Inc. Shadow frame support
CN103794460B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
JP5798143B2 (ja) * 2013-03-12 2015-10-21 株式会社東芝 平行平板型ドライエッチング装置及びこれを用いた半導体装置の製造方法
KR101451244B1 (ko) * 2013-03-22 2014-10-15 참엔지니어링(주) 라이너 어셈블리 및 이를 구비하는 기판 처리 장치
KR102171514B1 (ko) * 2013-08-29 2020-10-29 세메스 주식회사 기판처리장치
KR101535155B1 (ko) * 2014-01-09 2015-07-09 주식회사 유진테크 기판 처리장치
KR101629213B1 (ko) * 2015-02-02 2016-06-10 (주) 일하하이텍 기판 처리 장치 및 방법
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP6548484B2 (ja) * 2015-07-01 2019-07-24 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造
CN105280469A (zh) * 2015-09-17 2016-01-27 武汉华星光电技术有限公司 用以降低排气口等离子体损害的蚀刻反应***
CN107170660A (zh) * 2017-05-02 2017-09-15 惠科股份有限公司 干蚀刻设备及干蚀刻设备的电极
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
CN108321101B (zh) * 2018-02-24 2020-09-11 惠科股份有限公司 一种电极组件和蚀刻设备
JP7166147B2 (ja) * 2018-11-14 2022-11-07 東京エレクトロン株式会社 プラズマ処理装置
JP7232705B2 (ja) * 2019-05-16 2023-03-03 東京エレクトロン株式会社 プラズマ処理装置
JP7308711B2 (ja) * 2019-09-26 2023-07-14 東京エレクトロン株式会社 プラズマ処理装置
JP7418285B2 (ja) 2020-05-27 2024-01-19 東京エレクトロン株式会社 基板処理装置とその製造方法、及び排気構造
JP7519973B2 (ja) 2020-10-20 2024-07-22 東京エレクトロン株式会社 基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022263A (ja) 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JPH1140398A (ja) 1997-07-23 1999-02-12 Kokusai Electric Co Ltd プラズマ生成装置
KR100880784B1 (ko) * 2006-03-24 2009-02-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298727A (ja) * 1985-10-25 1987-05-08 Mitsubishi Electric Corp エツチング処理装置
JPS634615A (ja) * 1986-06-25 1988-01-09 Hitachi Tokyo Electron Co Ltd 半導体装置製造装置
JP3002448B1 (ja) * 1998-07-31 2000-01-24 国際電気株式会社 基板処理装置
JP2000054147A (ja) * 1998-08-07 2000-02-22 Kokusai Electric Co Ltd 基板処理装置
JP4330315B2 (ja) * 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
JP4087674B2 (ja) * 2002-09-27 2008-05-21 株式会社ユーテック 半導体製造装置
JP4286576B2 (ja) * 2003-04-25 2009-07-01 東京エレクトロン株式会社 プラズマ処理装置
JP2006060073A (ja) * 2004-08-20 2006-03-02 Tokyo Electron Ltd プラズマ処理装置
JP5217569B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022263A (ja) 1996-06-28 1998-01-23 Sony Corp プラズマエッチング装置
JPH1140398A (ja) 1997-07-23 1999-02-12 Kokusai Electric Co Ltd プラズマ生成装置
KR100880784B1 (ko) * 2006-03-24 2009-02-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
JP2010016021A (ja) 2010-01-21
JP5086192B2 (ja) 2012-11-28
CN101620972B (zh) 2011-06-22
CN101620972A (zh) 2010-01-06
TW201015636A (en) 2010-04-16
KR20100003708A (ko) 2010-01-11

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