KR101100684B1 - Iii nitride semiconductor light emitting device - Google Patents
Iii nitride semiconductor light emitting device Download PDFInfo
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- KR101100684B1 KR101100684B1 KR1020090064320A KR20090064320A KR101100684B1 KR 101100684 B1 KR101100684 B1 KR 101100684B1 KR 1020090064320 A KR1020090064320 A KR 1020090064320A KR 20090064320 A KR20090064320 A KR 20090064320A KR 101100684 B1 KR101100684 B1 KR 101100684B1
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- Prior art keywords
- electrode
- light emitting
- nitride semiconductor
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The present disclosure relates to a group III nitride semiconductor light emitting device, and more particularly, to a group III nitride semiconductor light emitting device which generates light through recombination of electrons and holes, the first supplying current for recombination of electrons and holes. An electrode and a second electrode; A first branch electrode extending from the first electrode; And a second branch electrode extending from the second electrode, the second branch electrode having at least a part of the thickness thereof different from the thickness of the first branch electrode.
Semiconductor, light emitting device, LED, electrode, variable, current, diffusion
Description
The present disclosure relates to a group III nitride semiconductor light emitting device as a whole, and more particularly, to a group III nitride semiconductor light emitting device having an electrode structure for current diffusion.
Here, the group III nitride semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, group III nitride nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, the GaAs group III nitride semiconductor light emitting element used for red light emission, etc. are mentioned.
This section provides background information related to the present disclosure which is not necessarily prior art.
1 is a view showing an example of a conventional Group III nitride Group III nitride semiconductor light emitting device, the Group III nitride Group III nitride semiconductor light emitting device is a
As the
The group III nitride semiconductor layers grown on the
The buffer layer 20 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat. No. 5,122,845 shows a sapphire substrate on a sapphire substrate at a temperature of 380 ° C. to 800 ° C. at 100 ° C. to 500 ° C. A technique for growing an AlN buffer layer having a thickness of US Pat. No. 5,290,393 describes Al (x) Ga (1-x) N having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900 C on a sapphire substrate. (0 ≦ x <1) A technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C., followed by In (x Techniques for growing a Ga (1-x) N (0 <x≤1) layer are described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 20 or as part of the n-type group III
In the n-type group III
The
The p-type group III nitride semiconductor layer 50 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process. U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing at a temperature of 400 DEG C or higher to provide a p-type group III nitride semiconductor layer. A technique for activating is described, and US Patent Publication No. 2006/157714 discloses a p-type III-nitride semiconductor layer without an activation process by using ammonia and a hydrazine-based source material together as a nitrogen precursor for growing the p-type III-nitride semiconductor layer. Techniques for having this p-type conductivity have been described.
The p-
On the other hand, the p-
The p-
The passivation layer 90 is formed of a material such as silicon dioxide and may be omitted.
Meanwhile, the n-type III-
2 is a view showing an example of the electrode structure described in US Pat. No. 5,563,422, wherein the p-
3 is a view showing an example of the electrode structure described in US Pat. No. 6,307,218, and the like between the p-
However, the light emitting device having such an electrode structure has a problem in that current may be concentrated in a region R close to the p-
This will be described later in the Specification for Implementation of the Invention.
SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).
According to one aspect of the present disclosure (According to one aspect of the present disclosure), in the Group III nitride semiconductor light emitting device for generating light through the recombination of electrons and holes, supplying a current for recombination of electrons and holes A first electrode and a second electrode; A first branch electrode extending from the first electrode; And a second branch electrode extending from the second electrode, the second branch electrode having at least a part of the thickness thereof different from the thickness of the first branch electrode.
This will be described later in the Specification for Implementation of the Invention.
The present disclosure will now be described in detail with reference to the accompanying drawing (s).
However, in the description, a description of the configuration overlapping with that described in the background art of the present disclosure will be replaced with the description below.
4 is a view illustrating an example of an electrode structure of a group III nitride semiconductor light emitting device according to the present disclosure. An electrode structure of the group III nitride semiconductor light emitting device according to the present disclosure extends from the
The
In this example, each of the
Each of the
That is, the
In the present example, at least two
This is to change the magnitude of the current flowing to each of the
As a result, a phenomenon in which current does not spread evenly between the
More specifically described as follows.
In this example, the
Among the
Among the
In this case, in consideration of the arrangement of the
To prevent this, in the present example, the thickness T2 of the
In addition, the thickness of the branch electrode farther from the center of the light emitting device is provided. That is, the thickness of the branch electrode in FIG. 4 is provided in order of T1 <T2 <T3 <T4 <T5.
Therefore, since the magnitude of the current flowing through the branch electrode positioned in the region where the current is relatively less driven is greater than the magnitude of the current flowing through the branch electrode positioned in the region where the current is relatively driven, the problem of current flow is alleviated or solved. You can do it.
Meanwhile, in the present example, since the flow of current occurs between the
In addition, in the present example, the
In addition, in the present example, the shape of the
In the present example, the thicknesses T1, T2, and T3 of the branch electrodes are values that can be determined through experiments according to the size, shape, distribution shape of the branch electrodes, the position of the electrode, and the shape of the light emitting device.
That is, the objective of the present disclosure may be achieved by thinly adjusting the thickness of the branch electrode passing through the region where the current density increases through experiments.
On the other hand, in the present example, the spacing between the branch electrodes may be provided uniformly, but the spacing in the first region R1 where the current density is relatively large is in the second region R2 where the current density is relatively small. It is preferable to provide larger than the interval of.
5 is a view illustrating another example of an electrode structure of the group III nitride semiconductor light emitting device according to the present disclosure. The electrode structure according to the present example is similar to the example of the electrode structure described above, but includes the first electrode 210. ) And at least one of the
Bonding wires to which current is supplied are coupled to each of the
As a result, the current supplied through one bonding wire is dividedly supplied through the plurality of bonding wires, thereby enabling stable current supply.
In particular, the larger the area of the light emitting device is, the larger the amount of current for driving the light emitting device is, which is useful in this case.
Also, in the present example, the thickness of the
In addition, in the present example, it is preferable that an imaginary straight line connecting the
6 is a view illustrating another example of an electrode structure of the group III nitride semiconductor light emitting device according to the present disclosure. The electrode structure according to the present example is similar to the example of the electrode structure described above. At least one of the 310 and the
This is to achieve stable current supply by dividing and supplying the driving current of the light emitting device as the area of the light emitting device increases as in the above-described example.
In addition, by positioning the divided
Also, in the present example, the thickness of the
7 and 8 illustrate another example of the electrode structure of the group III nitride semiconductor light emitting device according to the present disclosure. The electrode structure according to the present example is similar to the example of the electrode structure described above, At least one of the branch electrodes constituting the one
This is to alleviate or eliminate the difference in current density by varying the thickness of each part, considering that a difference in current density occurs in each region where each part of one branch electrode is located.
That is, the thickness of the portion located in the region where the current density is relatively high among the portions forming one branch electrode is provided to be thinner than the thickness of the portion positioned in the region where the current density is relatively low.
8 to 10, when a part of the second branch electrode or a part of the first branch electrode is positioned around the
Hereinafter, various embodiments of the present disclosure will be described.
(1) A group III nitride semiconductor light emitting element comprising a plurality of branch electrodes having different thicknesses. This can improve the concentration of the current.
(2) A group III nitride semiconductor light emitting element comprising a branch electrode having a thickness changed in the longitudinal direction. As a result, the concentration of current can be relaxed or eliminated.
(3) A group III nitride semiconductor light emitting element comprising an electrode in which a plurality of split electrodes are bonded together so that a plurality of wires can be bonded together with the embodiments of (1) or (2). This can improve the concentration of current even if the wire is poorly bonded to any of the split electrodes.
(4) A group III nitride semiconductor light emitting element comprising an electrode in which a plurality of split electrodes are positioned to be spaced apart from each other in accordance with the embodiment of (1) or (2). Thereby, the current density of a large area light emitting element can be improved uniformly.
According to the group III nitride semiconductor light emitting device according to the present disclosure, the current density between different branch electrodes can be made uniform, and the current density of the entire light emitting device can be improved uniformly.
According to the group III nitride semiconductor light emitting device according to the present disclosure, the current density formed around one branch electrode can be made uniform, and the current density of the entire light emitting device can be improved uniformly.
According to the group III nitride semiconductor light emitting device according to the present disclosure, even if a wire is poorly bonded to any one of the split electrodes, the concentration of current can be improved.
According to the group III nitride semiconductor light emitting device according to the present disclosure, the current density imbalance due to the large driving current of the large area light emitting device can be improved.
1 is a view showing an example of a conventional Group III nitride Group III nitride semiconductor light emitting device,
2 is a view showing an example of an electrode structure described in US Patent No. 5,563,422;
3 is a view showing an example of an electrode structure described in US Pat. No. 6,307,218;
4 is a view illustrating an example of an electrode structure of a group III nitride semiconductor light emitting device according to the present disclosure;
5 is a view showing another example of an electrode structure of a group III nitride semiconductor light emitting device according to the present disclosure;
6 is a view illustrating still another example of an electrode structure of a group III nitride semiconductor light emitting device according to the present disclosure;
7 is a view showing another example of an electrode structure of a group III nitride semiconductor light emitting device according to the present disclosure;
8 to 10 are enlarged views of parts A, B, and C in FIG. 7, respectively.
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090064320A KR101100684B1 (en) | 2009-07-15 | 2009-07-15 | Iii nitride semiconductor light emitting device |
TW99123072A TW201117425A (en) | 2009-07-15 | 2010-07-14 | III-nitride semiconductor light-emitting device |
PCT/KR2010/004628 WO2011008038A2 (en) | 2009-07-15 | 2010-07-15 | Group iii nitride semiconductor light-emitting device |
CN2010800362515A CN102549782A (en) | 2009-07-15 | 2010-07-15 | Group III nitride semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090064320A KR101100684B1 (en) | 2009-07-15 | 2009-07-15 | Iii nitride semiconductor light emitting device |
Publications (2)
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KR20110006778A KR20110006778A (en) | 2011-01-21 |
KR101100684B1 true KR101100684B1 (en) | 2012-01-03 |
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KR1020090064320A KR101100684B1 (en) | 2009-07-15 | 2009-07-15 | Iii nitride semiconductor light emitting device |
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KR (1) | KR101100684B1 (en) |
CN (1) | CN102549782A (en) |
TW (1) | TW201117425A (en) |
WO (1) | WO2011008038A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI453968B (en) * | 2011-05-20 | 2014-09-21 | Huga Optotech Inc | Semiconductor light-emitting structure |
WO2013024921A1 (en) * | 2011-08-17 | 2013-02-21 | 삼성전자주식회사 | Semiconductor light emitting device |
KR101349891B1 (en) * | 2012-09-13 | 2014-02-13 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
KR102075983B1 (en) * | 2013-06-18 | 2020-02-11 | 삼성전자주식회사 | Semiconductor light emitting device |
JP6458463B2 (en) | 2013-12-09 | 2019-01-30 | 日亜化学工業株式会社 | Light emitting element |
US10784407B2 (en) * | 2018-04-23 | 2020-09-22 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor light emitting element and nitride semiconductor light emitting device |
CN110911535A (en) * | 2019-11-20 | 2020-03-24 | 华南师范大学 | Visible light communication device based on branched annular electrode and preparation method thereof |
CN111081831B (en) * | 2019-11-20 | 2021-03-23 | 华南师范大学 | Multi-electrode-based illumination communication device and preparation method thereof |
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KR100387099B1 (en) | 2001-05-02 | 2003-06-12 | 광주과학기술원 | GaN-Based Light Emitting Diode and Fabrication Method thereof |
KR20050074280A (en) * | 2002-05-24 | 2005-07-18 | 루메이 옵토일렉트로닉스 코포레이션 | High power, high luminous flux light emitting diode and method of making same |
KR20080076248A (en) * | 2007-02-15 | 2008-08-20 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
KR20090066863A (en) * | 2007-12-20 | 2009-06-24 | 삼성전기주식회사 | Nitride semiconductor light-emitting device with electrode pattern |
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US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
KR100576853B1 (en) * | 2003-12-18 | 2006-05-10 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
JP5032033B2 (en) * | 2006-02-14 | 2012-09-26 | 昭和電工株式会社 | Light emitting diode |
KR100833311B1 (en) * | 2007-01-03 | 2008-05-28 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
-
2009
- 2009-07-15 KR KR1020090064320A patent/KR101100684B1/en not_active IP Right Cessation
-
2010
- 2010-07-14 TW TW99123072A patent/TW201117425A/en unknown
- 2010-07-15 WO PCT/KR2010/004628 patent/WO2011008038A2/en active Application Filing
- 2010-07-15 CN CN2010800362515A patent/CN102549782A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100387099B1 (en) | 2001-05-02 | 2003-06-12 | 광주과학기술원 | GaN-Based Light Emitting Diode and Fabrication Method thereof |
KR20050074280A (en) * | 2002-05-24 | 2005-07-18 | 루메이 옵토일렉트로닉스 코포레이션 | High power, high luminous flux light emitting diode and method of making same |
KR20080076248A (en) * | 2007-02-15 | 2008-08-20 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
KR20090066863A (en) * | 2007-12-20 | 2009-06-24 | 삼성전기주식회사 | Nitride semiconductor light-emitting device with electrode pattern |
Also Published As
Publication number | Publication date |
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WO2011008038A2 (en) | 2011-01-20 |
CN102549782A (en) | 2012-07-04 |
TW201117425A (en) | 2011-05-16 |
WO2011008038A3 (en) | 2011-04-28 |
KR20110006778A (en) | 2011-01-21 |
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