KR101097754B1 - 반도체 장치의 제조 방법 및 기판 처리 장치 - Google Patents
반도체 장치의 제조 방법 및 기판 처리 장치 Download PDFInfo
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- KR101097754B1 KR101097754B1 KR1020080127327A KR20080127327A KR101097754B1 KR 101097754 B1 KR101097754 B1 KR 101097754B1 KR 1020080127327 A KR1020080127327 A KR 1020080127327A KR 20080127327 A KR20080127327 A KR 20080127327A KR 101097754 B1 KR101097754 B1 KR 101097754B1
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- silicon
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- 238000012545 processing Methods 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000007789 gas Substances 0.000 claims abstract description 566
- 238000000034 method Methods 0.000 claims abstract description 186
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 134
- 150000004767 nitrides Chemical class 0.000 claims abstract description 116
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 102
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000001301 oxygen Substances 0.000 claims abstract description 94
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 93
- 230000008569 process Effects 0.000 claims abstract description 84
- 230000003213 activating effect Effects 0.000 claims abstract description 63
- 238000002407 reforming Methods 0.000 claims abstract description 40
- 239000000460 chlorine Substances 0.000 claims abstract description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 37
- 239000002994 raw material Substances 0.000 claims abstract description 33
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 137
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 130
- 239000010703 silicon Substances 0.000 claims description 130
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 49
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 49
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 21
- 238000001179 sorption measurement Methods 0.000 claims description 19
- 230000007246 mechanism Effects 0.000 claims description 18
- 230000004913 activation Effects 0.000 claims description 12
- 150000002926 oxygen Chemical class 0.000 claims description 6
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- 150000002829 nitrogen Chemical class 0.000 claims 4
- 239000005046 Chlorosilane Substances 0.000 claims 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract description 20
- 239000001257 hydrogen Substances 0.000 abstract description 19
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 394
- 239000010408 film Substances 0.000 description 275
- 235000012431 wafers Nutrition 0.000 description 112
- 239000010409 thin film Substances 0.000 description 89
- 238000006243 chemical reaction Methods 0.000 description 59
- 230000003647 oxidation Effects 0.000 description 55
- 238000007254 oxidation reaction Methods 0.000 description 55
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 41
- 229910004298 SiO 2 Inorganic materials 0.000 description 37
- 238000009826 distribution Methods 0.000 description 31
- 230000001590 oxidative effect Effects 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 20
- 229910007991 Si-N Inorganic materials 0.000 description 17
- 229910006294 Si—N Inorganic materials 0.000 description 17
- 230000002829 reductive effect Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 229910018557 Si O Inorganic materials 0.000 description 13
- 230000005284 excitation Effects 0.000 description 11
- 238000005121 nitriding Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 9
- 238000011144 upstream manufacturing Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- REJKHFAZHZLNOP-UHFFFAOYSA-N (tert-butylamino)silicon Chemical compound CC(C)(C)N[Si] REJKHFAZHZLNOP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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Abstract
Description
본 발명의 다른 형태에 따르면, 처리 용기 내의 기판에 대해서 실리콘을 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 실리콘 함유층을 형성하는 공정과, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 실리콘 함유층을 실리콘 질화층으로 변화시키는 공정과, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 실리콘 질화층을 실리콘 산화층으로 변화시키는 공정을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 반도체 장치의 제조 방법이 제공된다.
본 발명의 또 다른 형태에 따르면, 처리 용기 내에 소정 원소를 포함하는 원료 가스를 공급하는 원료 가스 공급계와, 상기 처리 용기 내에 질소를 포함하는 가스를 공급하는 질소 함유 가스 공급계와, 상기 처리 용기 내에 산소를 포함하는 가스를 공급하는 산소 함유 가스 공급계와, 상기 질소를 포함하는 가스 또는 상기 산소를 포함하는 가스를 활성화하는 활성화 기구와, 상기 처리 용기 내의 기판에 대해서 상기 원료 가스를 공급함으로써 상기 기판 상에 소정 원소 함유층을 형성하고, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 상기 질소를 포함하는 가스를 공급함으로써 상기 소정 원소 함유층을 질화층으로 변화시키고, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 상기 산소를 포함하는 가스를 공급함으로써 상기 질화층을 산화층으로 변화시키는 것을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하도록 상기 원료 가스 공급계, 상기 질소 함유 가스 공급계, 상기 산소 함유 가스 공급계 및 상기 활성화 기구를 제어하는 컨트롤러를 포함하는 것인 기판 처리 장치가 제공된다.
본 발명의 또 다른 형태에 따르면, 처리 용기 내의 기판에 대해서 소정 원소를 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 소정 원소 함유층을 형성하는 공정과, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 소정 원소 함유층을 질화층으로 변화시키는 공정과, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 질화층을 산화층으로 변화시키는 공정을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 기판 처리 방법이 제공된다.
본 발명의 또 다른 형태에 따르면, 처리 용기 내의 기판에 대하여 소정 원소를 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 소정 원소 함유층을 형성하는 공정과,
상기 처리 용기 내의 상기 기판에 대하여 열 또는 플라즈마로 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 소정 원소 함유층을 질화층으로 개질하는 공정과, 상기 처리 용기 내의 상기 기판에 대하여 플라즈마로 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 질화층을 산화층에 개질하는 공정을 1 사이클로 하고, 이 사이클을 복수 회 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 반도체 장치의 제조 방법이 제공된다.
Claims (26)
- 처리 용기 내의 기판에 대해서 소정 원소를 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 소정 원소 함유층을 형성하는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 소정 원소 함유층을 질화층으로 변화시키는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 질화층을 산화층으로 변화시키는 공정을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 반도체 장치의 제조 방법.
- 제1항에 있어서, 상기 질화층을 상기 산화층으로 변화시키는 공정에서는, 상기 처리 용기 내의 상기 기판에 대해서 상기 산소를 포함하는 가스를 플라즈마(plasma)로 활성화하여 공급함으로써, 상기 질화층을 산화층으로 변화시키는 반도체 장치의 제조 방법.
- 삭제
- 처리 용기 내의 기판에 대해서 실리콘을 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 실리콘 함유층을 형성하는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 실리콘 함유층을 실리콘 질화층으로 변화시키는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 실리콘 질화층을 실리콘 산화층으로 변화시키는 공정을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 반도체 장치의 제조 방법.
- 삭제
- 삭제
- 처리 용기 내에 소정 원소를 포함하는 원료 가스를 공급하는 원료 가스 공급계와,상기 처리 용기 내에 질소를 포함하는 가스를 공급하는 질소 함유 가스 공급계와,상기 처리 용기 내에 산소를 포함하는 가스를 공급하는 산소 함유 가스 공급계와,상기 질소를 포함하는 가스 또는 상기 산소를 포함하는 가스를 활성화하는 활성화 기구와,상기 처리 용기 내의 기판에 대해서 상기 원료 가스를 공급함으로써 상기 기판 상에 소정 원소 함유층을 형성하고, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 상기 질소를 포함하는 가스를 공급함으로써 상기 소정 원소 함유층을 질화층으로 변화시키고, 상기 처리 용기 내의 상기 기판에 대해서 활성화된 상기 산소를 포함하는 가스를 공급함으로써 상기 질화층을 산화층으로 변화시키는 것을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하도록 상기 원료 가스 공급계, 상기 질소 함유 가스 공급계, 상기 산소 함유 가스 공급계 및 상기 활성화 기구를 제어하는 컨트롤러를 포함하는 것인 기판 처리 장치.
- 삭제
- 제4항에 있어서, 상기 실리콘 질화층을 실리콘 산화층으로 변화시키는 공정에서는, 상기 처리 용기 내의 상기 기판에 대해서 상기 산소를 포함하는 가스를 플라즈마로 활성화하여 공급함으로써, 상기 실리콘 질화층을 실리콘 산화층으로 변화시키는 반도체 장치의 제조 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 상기 소정 원소 함유층이 상기 원료 가스의 흡착층 또는 상기 소정 원소층인 반도체 장치의 제조 방법.
- 제4항에 있어서, 상기 실리콘 함유층이 상기 실리콘을 포함하는 가스의 흡착층 또는 실리콘 층인 반도체 장치의 제조 방법.
- 제1항 또는 제4항에 있어서, 상기 각 공정에서는, 상기 기판의 온도를 같은 온도로 보지하는 반도체 장치의 제조 방법.
- 처리 용기 내의 기판에 대해서 소정 원소를 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 소정 원소 함유층을 형성하는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 소정 원소 함유층을 질화층으로 변화시키는 공정과,상기 처리 용기 내의 상기 기판에 대해서 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 질화층을 산화층으로 변화시키는 공정을 1 사이클로 하고, 이 사이클을 여러 차례 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 기판 처리 방법.
- 삭제
- 제1항 또는 제4항에 있어서,상기 원료 가스는 염소 및 탄소 중 적어도 어느 하나를 더 포함하는 반도체 장치의 제조 방법.
- 제4항에 있어서,상기 원료 가스는 클로로실란 및 아미노실란 중 적어도 어느 하나를 포함하는 반도체 장치의 제조 방법.
- 제4항에 있어서,상기 원료 가스는 클로로실란을 포함하는 반도체 장치의 제조 방법.
- 제4항에 있어서,상기 원료 가스는, Si2Cl6, SiCl4 및 SiH2Cl2중 적어도 어느 하나를 포함하는 반도체 장치의 제조 방법.
- 제4항에 있어서,상기 원료 가스는, 아미노실란을 포함하는 반도체 장치의 제조 방법.
- 제4항에 있어서,상기 원료 가스는, Si(N(CH3)2)4, Si(N(CH3)2)3H, Si(N(C2H5)2)2H2 및 SiH2(NH(C4H9))2 중 적어도 어느 하나를 포함하는 반도체 장치의 제조 방법.
- 처리 용기 내의 기판에 대하여 소정 원소를 포함하는 원료 가스를 공급함으로써, 상기 기판 상에 소정 원소 함유층을 형성하는 공정과,상기 처리 용기 내의 상기 기판에 대하여 열 또는 플라즈마로 활성화된 질소를 포함하는 가스를 공급함으로써, 상기 소정 원소 함유층을 질화층으로 개질하는 공정과,상기 처리 용기 내의 상기 기판에 대하여 플라즈마로 활성화된 산소를 포함하는 가스를 공급함으로써, 상기 질화층을 산화층에 개질하는 공정을 1 사이클로 하고, 이 사이클을 복수 회 반복함으로써, 상기 기판 상에 소정 막 두께의 산화막을 형성하는 반도체 장치의 제조 방법.
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TWI411014B (zh) | 2013-10-01 |
US20140065840A1 (en) | 2014-03-06 |
US20090170345A1 (en) | 2009-07-02 |
JP2010050425A (ja) | 2010-03-04 |
US8895455B2 (en) | 2014-11-25 |
KR101097755B1 (ko) | 2011-12-22 |
KR20090071391A (ko) | 2009-07-01 |
JP4611414B2 (ja) | 2011-01-12 |
KR20110120859A (ko) | 2011-11-04 |
KR101189498B1 (ko) | 2012-10-11 |
KR20100136953A (ko) | 2010-12-29 |
US8609551B2 (en) | 2013-12-17 |
TW200941551A (en) | 2009-10-01 |
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