KR101086880B1 - 게터층을 갖는 유기전계발광표시장치 제조방법 - Google Patents
게터층을 갖는 유기전계발광표시장치 제조방법 Download PDFInfo
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- KR101086880B1 KR101086880B1 KR1020090046850A KR20090046850A KR101086880B1 KR 101086880 B1 KR101086880 B1 KR 101086880B1 KR 1020090046850 A KR1020090046850 A KR 1020090046850A KR 20090046850 A KR20090046850 A KR 20090046850A KR 101086880 B1 KR101086880 B1 KR 101086880B1
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- South Korea
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- getter
- substrate
- encapsulation substrate
- film
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005538 encapsulation Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000002105 nanoparticle Substances 0.000 claims description 9
- 229920005596 polymer binder Polymers 0.000 claims description 8
- 239000002491 polymer binding agent Substances 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 238000010438 heat treatment Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 150000001722 carbon compounds Chemical class 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- -1 alumina Chemical class 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 2
- ZIJTYIRGFVHPHZ-UHFFFAOYSA-N selenium oxide(seo) Chemical compound [Se]=O ZIJTYIRGFVHPHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 봉지 기판 상에 건식법을 사용하여 게터층을 형성하는 단계;다수개의 단위 유기전계발광소자를 구비하는 소자 어레이가 형성된 소자 기판을 제공하는 단계;상기 게터층이 상기 소자 어레이를 바라보도록 상기 소자 기판과 상기 봉지 기판을 진공상태에서 합착하여 모듈을 형성하는 단계; 및상기 봉지기판 및 상기 소자 기판 사이의 모든 공간에 충진되도록 상기 모듈을 열처리 하여 상기 게터층에 유동성을 부여하는 단계를 포함하는 유기전계발광표시장치 제조방법.
- 삭제
- 제1항에 있어서,상기 게터층은 다공성 나노 입자 및 고분자 바인더를 함유하는 필름이고,상기 모듈을 열처리하는 것은 상기 고분자 바인더의 유리전이온도 이상의 온도에서 수행하는 것인 유기전계발광표시장치 제조방법.
- 제1항에 있어서,상기 모듈을 열처리하는 것은 핫 플레이트, 챔버, 또는 에어 나이프를 사용하여 수행하는 유기전계발광표시장치 제조방법.
- 제1항에 있어서,상기 게터층을 형성하는 것은 상기 봉지 기판 상에 게터필름을 압착하는 방법 또는 증발법을 사용하여 수행하는 유기전계발광표시장치 제조방법.
- 제5항에 있어서,상기 봉지 기판 상에 상기 게터필름을 압착하기 전에,상기 게터필름의 적어도 일면 상에 제공된 보호필름을 제거하는 단계를 더 포함하는 유기전계발광표시장치 제조방법.
- 제5항에 있어서,증발법을 사용하여 상기 게터층을 형성하는 것은, 다공성 나노 입자와 단량체(monomer)를 증발시켜 상기 봉지기판 상에 적층시키는 것인 유기전계발광표시장치 제조방법.
- 제1항에 있어서,상기 모듈을 형성하기 전에, 상기 게터층을 열처리하는 단계를 더 포함하는 유기전계발광표시장치 제조방법.
- 제8항에 있어서,상기 게터층을 열처리하는 것은 핫 플레이트, 챔버, 또는 에어 나이프를 사용하여 수행하는 유기전계발광표시장치 제조방법.
- 제1항에 있어서,상기 게터층은 광투과성 게터층인 유기전계발광표시장치 제조방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090046850A KR101086880B1 (ko) | 2009-05-28 | 2009-05-28 | 게터층을 갖는 유기전계발광표시장치 제조방법 |
CN201080022937.9A CN102449804B (zh) | 2009-05-28 | 2010-05-04 | 具有消气剂层的有机电致发光显示器件的制造方法 |
EP10780716.6A EP2437327A4 (en) | 2009-05-28 | 2010-05-04 | Fabrication method of organic electroluminescence display device having a getter layer |
JP2012512946A JP5748069B2 (ja) | 2009-05-28 | 2010-05-04 | ゲッター層を有する有機電界発光表示装置の製造方法 |
US13/321,686 US20120070923A1 (en) | 2009-05-28 | 2010-05-04 | Fabrication method of organic electroluminescence display having a getter layer |
PCT/KR2010/002840 WO2010137805A2 (ko) | 2009-05-28 | 2010-05-04 | 게터층을 갖는 유기전계발광표시장치 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090046850A KR101086880B1 (ko) | 2009-05-28 | 2009-05-28 | 게터층을 갖는 유기전계발광표시장치 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100128454A KR20100128454A (ko) | 2010-12-08 |
KR101086880B1 true KR101086880B1 (ko) | 2011-11-24 |
Family
ID=43223192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090046850A KR101086880B1 (ko) | 2009-05-28 | 2009-05-28 | 게터층을 갖는 유기전계발광표시장치 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120070923A1 (ko) |
EP (1) | EP2437327A4 (ko) |
JP (1) | JP5748069B2 (ko) |
KR (1) | KR101086880B1 (ko) |
CN (1) | CN102449804B (ko) |
WO (1) | WO2010137805A2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101502849B1 (ko) | 2012-09-18 | 2015-03-16 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102113600B1 (ko) * | 2012-12-07 | 2020-05-21 | 엘지디스플레이 주식회사 | 유기 발광 다이오드 표시 장치 및 이의 제조 방법 |
WO2015190096A1 (ja) * | 2014-06-12 | 2015-12-17 | 株式会社Joled | 有機el表示パネル |
CN108630829B (zh) * | 2017-03-17 | 2019-11-08 | 京东方科技集团股份有限公司 | 显示面板的制作方法、显示面板及显示装置 |
Citations (3)
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KR100722464B1 (ko) * | 2006-07-14 | 2007-05-28 | 주식회사 두산 | 패키징용 게터, 고활성 산화칼슘, 및 고활성 산화칼슘의제조방법 |
JP2007220593A (ja) | 2006-02-20 | 2007-08-30 | Hitachi Displays Ltd | 有機el表示装置 |
JP2009037808A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
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JPS63251921A (ja) * | 1987-04-08 | 1988-10-19 | Hitachi Maxell Ltd | 磁気記録媒体およびその製造方法 |
JP2000068047A (ja) * | 1998-08-20 | 2000-03-03 | Hokuriku Electric Ind Co Ltd | 有機el素子とその製造方法 |
US6465953B1 (en) * | 2000-06-12 | 2002-10-15 | General Electric Company | Plastic substrates with improved barrier properties for devices sensitive to water and/or oxygen, such as organic electroluminescent devices |
US6936131B2 (en) * | 2002-01-31 | 2005-08-30 | 3M Innovative Properties Company | Encapsulation of organic electronic devices using adsorbent loaded adhesives |
KR100480361B1 (ko) * | 2002-04-18 | 2005-03-30 | 네오뷰코오롱 주식회사 | 박막형 게터층이 형성된 밀봉형 유기 발광 소자 및 그제조방법 |
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-
2009
- 2009-05-28 KR KR1020090046850A patent/KR101086880B1/ko active IP Right Grant
-
2010
- 2010-05-04 US US13/321,686 patent/US20120070923A1/en not_active Abandoned
- 2010-05-04 CN CN201080022937.9A patent/CN102449804B/zh not_active Expired - Fee Related
- 2010-05-04 JP JP2012512946A patent/JP5748069B2/ja not_active Expired - Fee Related
- 2010-05-04 WO PCT/KR2010/002840 patent/WO2010137805A2/ko active Application Filing
- 2010-05-04 EP EP10780716.6A patent/EP2437327A4/en not_active Withdrawn
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JP2007220593A (ja) | 2006-02-20 | 2007-08-30 | Hitachi Displays Ltd | 有機el表示装置 |
KR100722464B1 (ko) * | 2006-07-14 | 2007-05-28 | 주식회사 두산 | 패키징용 게터, 고활성 산화칼슘, 및 고활성 산화칼슘의제조방법 |
JP2009037808A (ja) * | 2007-07-31 | 2009-02-19 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101502849B1 (ko) | 2012-09-18 | 2015-03-16 | 미쓰비시덴키 가부시키가이샤 | 반도체장치 |
Also Published As
Publication number | Publication date |
---|---|
JP2012528449A (ja) | 2012-11-12 |
EP2437327A2 (en) | 2012-04-04 |
CN102449804A (zh) | 2012-05-09 |
WO2010137805A2 (ko) | 2010-12-02 |
JP5748069B2 (ja) | 2015-07-15 |
CN102449804B (zh) | 2015-12-09 |
EP2437327A4 (en) | 2017-07-12 |
WO2010137805A3 (ko) | 2011-02-24 |
US20120070923A1 (en) | 2012-03-22 |
KR20100128454A (ko) | 2010-12-08 |
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