KR100997776B1 - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
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- KR100997776B1 KR100997776B1 KR1020030045970A KR20030045970A KR100997776B1 KR 100997776 B1 KR100997776 B1 KR 100997776B1 KR 1020030045970 A KR1020030045970 A KR 1020030045970A KR 20030045970 A KR20030045970 A KR 20030045970A KR 100997776 B1 KR100997776 B1 KR 100997776B1
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- Prior art keywords
- insulating film
- interlayer insulating
- forming
- film
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 77
- 239000011229 interlayer Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 24
- 229910052718 tin Inorganic materials 0.000 description 23
- 239000007789 gas Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (7)
- 반도체 기판 상에 제1층간절연막을 형성하는 단계;상기 제1층간절연막 상에 하부금속배선층을 형성하고 상기 하부금속배선층을 패터닝하여 하부전극 및 하부금속배선을 형성하는 단계;상기 하부전극 및 하부금속배선을 포함한 제1층간절연막 상에 제2층간절연막을 형성하는 단계;상기 제2층간절연막을 식각하여 트렌치를 형성하는 단계;상기 트렌치가 형성된 결과물 상에 유전체막 형성용 절연막 및 상부전극층을 차례로 증착하는 단계;상기 상부전극층과 유전체막 형성용 절연막을 씨엠피하여 상기 트렌치 내에 유전체막과 상부전극을 형성하는 단계;상기 유전체막과 상부전극을 포함한 제2층간절연막 상에 제3층간절연막을 형성하는 단계;상기 제3층간절연막과 제2층간절연막을 식각하여 하부금속배선, 하부전극 및 상부전극을 각각 노출시키는 비아 홀들을 형성하는 단계;상기 각 비아 홀 내에 비아 플러그를 형성하는 단계; 및상기 제3층간절연막 상에 각 비아 플러그와 각각 연결되는 상부금속배선들을 형성하는 단계;를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 제2층간절연막의 식각은 CxFy 가스를 활성화시킨 플라즈마로 수행하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 2 항에 있어서, 상기 CxFy 가스는 "C" 및 "F" 의 조합으로 이루어진 CF4, CHF3, C2F6 및 C4F8 중 어느 하나의 가스를 사용하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 2 항에 있어서, 상기 제2층간절연막의 식각은 CxFy 가스를 활성화시킨 플라즈마에 O2, Ar, N2, H2 가스 및 이들의 조합으로 된 가스 중 어느 하나를 추가하여 수행하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 유전체막 형성용 절연막은 CVD 방식을 이용하여 증착하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 상부전극층은 CVD 방식을 이용하여 증착하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1 항에 있어서, 상기 상부전극층은 Ti/TiN 구조로 증착하는 것을 특징으로 하는 반도체 소자의 제조방법.
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KR1020030045970A KR100997776B1 (ko) | 2003-07-08 | 2003-07-08 | 반도체 소자의 제조방법 |
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KR20050005972A KR20050005972A (ko) | 2005-01-15 |
KR100997776B1 true KR100997776B1 (ko) | 2010-12-02 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100705257B1 (ko) | 2005-12-05 | 2007-04-09 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
KR100712817B1 (ko) * | 2005-12-29 | 2007-04-30 | 동부일렉트로닉스 주식회사 | 반도체 장치 및 그 형성 방법 |
KR100822179B1 (ko) | 2006-12-27 | 2008-04-16 | 동부일렉트로닉스 주식회사 | 반도체 소자용 커패시터 및 이의 제조 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142593A (ja) * | 2001-08-01 | 2003-05-16 | Samsung Electronics Co Ltd | 金属−絶縁体−金属キャパシタ及びダマシン配線構造を有する半導体素子の製造方法 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003142593A (ja) * | 2001-08-01 | 2003-05-16 | Samsung Electronics Co Ltd | 金属−絶縁体−金属キャパシタ及びダマシン配線構造を有する半導体素子の製造方法 |
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