KR100996823B1 - 향상된 전기저항과 인덕턴스를 갖는 반도체 장치를 위한집적회로 패키지 - Google Patents
향상된 전기저항과 인덕턴스를 갖는 반도체 장치를 위한집적회로 패키지 Download PDFInfo
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- KR100996823B1 KR100996823B1 KR1020067000918A KR20067000918A KR100996823B1 KR 100996823 B1 KR100996823 B1 KR 100996823B1 KR 1020067000918 A KR1020067000918 A KR 1020067000918A KR 20067000918 A KR20067000918 A KR 20067000918A KR 100996823 B1 KR100996823 B1 KR 100996823B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 119
- 229910052751 metal Inorganic materials 0.000 claims abstract description 119
- 238000000034 method Methods 0.000 claims description 14
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- 238000013461 design Methods 0.000 description 34
- 230000009977 dual effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Abstract
Description
Claims (54)
- 집적 회로를 구비하는 다이; 및상기 다이의 하부에 배열된 리드프레임 패드와, 상기 다이의 제1 면의 길이 일부분을 따라 배치된 제1 레그와 상기 다이의 제2 면의 길이의 실질적인 일부분을 따라 배치된 제2 레그를 구비하는 본딩 금속 영역을 구비하는 리드프레임;으로 이루어지는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,상기 본딩 금속 영역의 제1 및 제2 레그에 결합되고 배치된 복수의 본딩 와이어를 더 포함하고,상기 다이와의 상호 연결은 상기 다이의 제2 면을 따라 그리고 상기 다이의 제1 면을 따라 배치되는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,상기 다이와 상기 리드프레임의 최소한 일부의 주위에 몰딩된 플라스틱 바디; 및상기 플라스틱 바디의 외면에 위치하고 상기 본딩 금속 영역의 제2 레그로부터 뻗어 나온 제1 싱글 연속 외부 리드프레임 단자 스트립;을 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제3항에 있어서,상기 플라스틱 바디의 외면에 위치하고 상기 리드프레임 패드로부터 뻗어 나온 제2 싱글 연속 외부 리드프레임 단자 스트립을 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제4항에 있어서,상기 집적회로는 금속 산화막 반도체 전계효과 트랜지스터 장치이고;상기 제1 싱글 연속 외부 리드프레임 단자 스트립은 소스 단자이고; 그리고상기 제2 싱글 연속 외부 리드프레임 단자 스트립은 드레인 단자인 것을 특징으로 하는 반도체 집적회로 패키지.
- 제5항에 있어서, 상기 리드프레임은상기 다이의 제3 면의 길이의 일부분을 따라 배치된 게이트 본딩 금속 영역을 갖는 게이트 단자; 및상기 플라스틱 바디의 외부에 위치한 리드프레임 리드;를 더 포함하고, 상기 제3 면과 제2 면은 인접하고 있으며, 상기 다이에 연결된 게이트 패드를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제6항에 있어서, 상기 게이트 패드는 상기 다이의 제3 면의 중심에 실질적으로 연결되는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제4항에 있어서, 상기 제1 및 제2 싱글 연속 외부 리드프레임 단자 스트립은 그것에 연결된 복수개의 공간 분리된 리드프레임 피트를 구비하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,상기 다이와 상기 리드프레임의 최소한 일부의 주위에 몰딩된 플라스틱 바디;상기 플라스틱 바디의 외부에 위치하고 상기 본딩 금속 영역의 제2 레그로부터 뻗어 나온 제1 복수의 외부 리드프레임 리드; 및상기 플라스틱 바디의 외부에 위치하고 상기 리드프레임 패드로부터 사방으로 뻗은 제2 복수의 외부 리드프레임 리드;를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,제2 집적 회로를 구비하는 제2 다이; 및상기 제2 다이의 하부에 배치된 제2 리드프레임 패드 및 상기 제2 다이의 제1 면의 길이의 일부분을 따라 배치된 제1 레그와 상기 제2 다이의 제2 면의 길이의 일부분을 따라 배치된 제2 레그를 구비하는 제2 본딩 금속 영역을 구비하는 제2 리드프레임;을 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제10항에 있어서, 상기 리드프레임과 상기 제2 리드프레임 각각은,상기 제2 면의 길이의 잔여 부분을 따라 배치된 게이트 본딩 금속 영역을 구비하는 게이트 단자와,상기 다이와 상기 리드프레임의 최소한 일부의 주위 및 상기 제2 다이와 상기 제2 리드프레임의 최소한 일부의 주위에 몰딩된 플라스틱 바디의 외부에 위치하는 리드프레임 리드를 더 포함하고; 그리고,상기 다이의 모서리에 연결된 제1 게이트 패드; 및상기 제2 다이의 모서리에 연결된 제2 게이트 패드를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 제2 레그는 상기 다이의 제2 면 길이의 실질적인 일부분을 따라 불연속적인 레그로 배치되는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 본딩 금속 영역은 상부 모서리에 대하여 "L"-형인 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 본딩 금속 영역은 하나는 상부 모서리에 대한 것과 하부 모서리 대한 두 개의 "L" 형 영역을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 본딩 금속 영역은 상기 다이의 상부 끝단에 대하여 "J" 형인 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 본딩 금속 영역은 상기 다이의 하부 끝단에 "C"-형 영역을 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서, 상기 본딩 금속 영역은 "J" 형인 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,상기 리드프레임 패드 상에서 상기 다이와 평행 공간적 관계로 집적된 제2 다이;제2 본딩 금속 영역;을 더 포함하고, 상기 본딩 금속 영역은 상기 다이의 두 인접 면에 대하여 배치된 제1 "L" 형 금속 본딩 영역을 포함하고, 상기 제2 본딩 금속 영역은 상기 제2 다이의 두 인접한 면에 대하여 배치된 제2 "L" 형 금속 본딩 영역을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제18항에 있어서, 상기 리드프레임 패드 상에 집적되고 상기 다이 및 제2 다 이에 연결된 전기적 구성요소를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제18항에 있어서, 상기 다이의 두 인접한 면은 상부 면과 좌측 면을 포함하고, 상기 제2 다이의 두 인접한 면은 하부 면과 좌측 면을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제18항에 있어서, 상기 다이의 두 인접한 면은 하부 면과 좌측 면을 포함하고, 상기 제2 다이의 인접한 면은 하부 면과 우측 면을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제18항에 있어서, 상기 리드프레임 패드 상에 위치하는 전기적 구성요소 또는 제3 다이를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,상기 리드프레임 위에 배치된 최소한 하나의 다른 다이;를 더 포함하고, 상기 본딩 금속 영역은 패키지 바디의 두 인접한 면에 대하여 배치된 "L" 형 금속 본딩 영역을 포함하고, 여기서 본드 와이어는 상기 "L" 형 본딩 영역 및 상기 다이와 상기 최소한 하나의 다른 다이의 상부 표면에 연결되는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제1항에 있어서,제2 다이;표면에 제2 다이를 구비하는 제2 리드프레임 패드; 및제2 본딩 금속 영역을 더 포함하고, 상기 제2 다이는 상기 다이의 아래에 위치하고, 상기 본딩 금속 영역은 상기 다이의 상부 끝단에 대하여 배치된 상부 "J" 형 금속 본딩 영역 및 상기 다이의 하부 끝단과 상기 제2 다이의 상부 끝단에 접하는 중심 "I" 형 금속 본딩 영역을 포함하고, 그리고 상기 제2 본딩 금속 영역은 상기 제2 다이의 하부 끝단에 대하여 배치된 하부 "C" 형 금속 본딩 영역을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제24항에 있어서, 상기 리드프레임 패드의 위에 위치하고 상기 다이에 연결된 제2 전기적 구성요소 또는 다이를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제24항에 있어서, 상기 제2 리드프레임 위에 위치하고 상기 제2 다이에 연결된 제2 전기적 구성요소 또는 다이를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
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- 집적회로를 구비하는 다이; 및상기 다이의 하부에 위치하는 리드프레임 패드와, 상기 다이의 제1 면의 길이의 일부분을 따라 배치된 평행 섹션을 갖는 본딩 금속 영역을 구비하는 리드프레임;으로 이루어지고, 상기 평행 섹션은 각각 그것에 연결된 리드를 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제50항에 있어서, 상기 본딩 금속 영역 및 상기 다이 사이에 본드 와이어 상호접속을 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제50항에 있어서,상기 다이는 MOSFET이고;상기 본딩 금속 영역은 소스 금속 본딩 영역이고; 그리고상기 소스 금속 본딩 영역에 평행한 금속 본딩 영역과 상기 다이 상의 게이트 패드에 연결된 본드 와이어를 구비하는 게이트;를 더 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제50항에 있어서,제2 다이;상기 제2 다이의 하부에 위치하는 리드프레임 패드와, 상기 제2 다이의 제1 면의 길이의 일부분을 따라 배치된 평행 섹션을 갖는 본딩 금속 영역을 구비하는 리드프레임;을 더 포함하고, 상기 평행 섹션은 각각 그것에 연결된 리드를 구비하는 것을 특징으로 하는 반도체 집적회로 패키지.
- 제53항에 있어서, 상기 평행 섹션은 게이트 금속 본딩 영역 및 소스 금속 본딩 영역을 포함하는 것을 특징으로 하는 반도체 집적회로 패키지.
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PCT/US2003/022430 WO2005017994A1 (en) | 2003-07-14 | 2003-07-14 | Integrated circuit package for semiconductor devices with improved electric resistance and inductance |
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KR1020107011144A KR100993735B1 (ko) | 2003-07-14 | 2003-07-14 | 반도체 집적회로 패키지에서 저항 및 인덕턴스를 감소시키는 방법 |
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KR (2) | KR100996823B1 (ko) |
CN (1) | CN1839471B (ko) |
AU (1) | AU2003252015A1 (ko) |
WO (1) | WO2005017994A1 (ko) |
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DE102005018941B4 (de) * | 2005-04-22 | 2010-07-08 | Infineon Technologies Ag | Halbleiterbauteil in einem Standardgehäuse und Verfahren zur Herstellung desselben |
DE102006021959B4 (de) | 2006-05-10 | 2011-12-29 | Infineon Technologies Ag | Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung |
US8941962B2 (en) * | 2011-09-13 | 2015-01-27 | Fsp Technology Inc. | Snubber circuit and method of using bipolar junction transistor in snubber circuit |
US9373577B2 (en) * | 2013-05-21 | 2016-06-21 | Infineon Technologies Ag | Hybrid semiconductor package |
JP6582678B2 (ja) * | 2015-07-27 | 2019-10-02 | 三菱電機株式会社 | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5168386A (en) | 1990-10-22 | 1992-12-01 | Tencor Instruments | Flat field telecentric scanner |
US5723899A (en) | 1994-08-30 | 1998-03-03 | Amkor Electronics, Inc. | Semiconductor lead frame having connection bar and guide rings |
US6608367B1 (en) | 2002-02-25 | 2003-08-19 | Rf Micro Devices, Inc. | Leadframe inductors |
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US5168368A (en) * | 1991-05-09 | 1992-12-01 | International Business Machines Corporation | Lead frame-chip package with improved configuration |
US6184585B1 (en) * | 1997-11-13 | 2001-02-06 | International Rectifier Corp. | Co-packaged MOS-gated device and control integrated circuit |
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- 2003-07-14 KR KR1020067000918A patent/KR100996823B1/ko active IP Right Grant
- 2003-07-14 WO PCT/US2003/022430 patent/WO2005017994A1/en active Application Filing
- 2003-07-14 AU AU2003252015A patent/AU2003252015A1/en not_active Abandoned
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168386A (en) | 1990-10-22 | 1992-12-01 | Tencor Instruments | Flat field telecentric scanner |
US5723899A (en) | 1994-08-30 | 1998-03-03 | Amkor Electronics, Inc. | Semiconductor lead frame having connection bar and guide rings |
US6608367B1 (en) | 2002-02-25 | 2003-08-19 | Rf Micro Devices, Inc. | Leadframe inductors |
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KR100993735B1 (ko) | 2010-11-11 |
WO2005017994A1 (en) | 2005-02-24 |
KR20060110857A (ko) | 2006-10-25 |
AU2003252015A1 (en) | 2005-03-07 |
CN1839471B (zh) | 2011-03-16 |
KR20100069714A (ko) | 2010-06-24 |
CN1839471A (zh) | 2006-09-27 |
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