KR100900680B1 - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
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- KR100900680B1 KR100900680B1 KR1020020075796A KR20020075796A KR100900680B1 KR 100900680 B1 KR100900680 B1 KR 100900680B1 KR 1020020075796 A KR1020020075796 A KR 1020020075796A KR 20020075796 A KR20020075796 A KR 20020075796A KR 100900680 B1 KR100900680 B1 KR 100900680B1
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- Prior art keywords
- trench
- film
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- etching
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 239000011229 interlayer Substances 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 20
- 239000010410 layer Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 abstract description 15
- 238000009499 grossing Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000008239 natural water Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
- (a)접합부 또는 하부 금속배선이 형성된 반도체 기판 상에 배리어막과 층간 절연막을 순차적으로 형성하는 단계;(b)패터닝 공정을 실시하여 상기 층간 절연막의 일부를 식각하여 트렌치를 형성하는 단계;(c)패터닝 공정을 실시할때 빛이 난반사되는 것을 억제하기 위하여 상기 트렌치 상부 모서리 부분이 라운딩되도록 식각하는 단계;(d)패터닝 공정을 실시하여 상기 트렌치 하부에, 상기 접합부 또는 상기 하부 금속 배선과의 연결을 위한 비아홀을 형성하는 단계;(e)상기 비아홀을 통해 노출된 상기 배리어막을 제거하는 단계; 및(f)전체 구조 상부에 상기 트렌치가 매립되도록 도전성 물질을 증착한 다음, 상기 트렌치 상부의 라운딩된 모서리 부분이 제거되도록 평탄화 공정을 실시하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 상기 (c) 단계의 식각은,'불활성 기체와 N2가스의 혼합가스', '불활성 기체와 O2가스의 혼합가스' 또는 '불활성 기체, N2가스 및 O2 가스의 혼합가스' 중 어느 하나의 혼합 가스를 이용한 플라즈마 건식 식각인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 상기 (c) 단계의 식각은,HF를 포함하는 불소 계열의 용액을 이용한 습식 식각인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서, 상기 (c) 단계와 상기 (d) 단계 사이에,전제 구조상에 단차를 따라 SiON 계열의 반사 방지막을 형성하는 단계를 더 포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 층간 절연막은 제 1 절연막, 식각 방지막 및 제 2 절연막이 순차적 적층된 막인 것을 특징으로 하는 반도체 소자의 제조 방법.
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KR1020020075796A KR100900680B1 (ko) | 2002-12-02 | 2002-12-02 | 반도체 소자의 제조 방법 |
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KR1020020075796A KR100900680B1 (ko) | 2002-12-02 | 2002-12-02 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040048042A KR20040048042A (ko) | 2004-06-07 |
KR100900680B1 true KR100900680B1 (ko) | 2009-06-01 |
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KR1020020075796A KR100900680B1 (ko) | 2002-12-02 | 2002-12-02 | 반도체 소자의 제조 방법 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100726147B1 (ko) * | 2005-02-28 | 2007-06-13 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체장치의 제조 방법 |
KR100724625B1 (ko) * | 2005-06-09 | 2007-06-04 | 주식회사 하이닉스반도체 | 반도체 장치의 제조방법 |
KR100724271B1 (ko) * | 2005-12-29 | 2007-05-31 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
KR100770541B1 (ko) * | 2005-12-29 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930024106A (ko) * | 1992-05-30 | 1993-12-21 | 김주용 | 반도체 소자의 콘택형성방법 |
JPH06283483A (ja) * | 1993-03-24 | 1994-10-07 | Sanyo Electric Co Ltd | エッチング方法 |
KR19990039605A (ko) * | 1997-11-13 | 1999-06-05 | 윤종용 | 반도체 소자의 층간 접속방법 |
US6429121B1 (en) * | 2001-02-07 | 2002-08-06 | Advanced Micro Devices, Inc. | Method of fabricating dual damascene with silicon carbide via mask/ARC |
-
2002
- 2002-12-02 KR KR1020020075796A patent/KR100900680B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930024106A (ko) * | 1992-05-30 | 1993-12-21 | 김주용 | 반도체 소자의 콘택형성방법 |
JPH06283483A (ja) * | 1993-03-24 | 1994-10-07 | Sanyo Electric Co Ltd | エッチング方法 |
KR19990039605A (ko) * | 1997-11-13 | 1999-06-05 | 윤종용 | 반도체 소자의 층간 접속방법 |
US6429121B1 (en) * | 2001-02-07 | 2002-08-06 | Advanced Micro Devices, Inc. | Method of fabricating dual damascene with silicon carbide via mask/ARC |
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