KR100838483B1 - 반도체 소자의 게이트 식각방법 - Google Patents
반도체 소자의 게이트 식각방법 Download PDFInfo
- Publication number
- KR100838483B1 KR100838483B1 KR1020060133854A KR20060133854A KR100838483B1 KR 100838483 B1 KR100838483 B1 KR 100838483B1 KR 1020060133854 A KR1020060133854 A KR 1020060133854A KR 20060133854 A KR20060133854 A KR 20060133854A KR 100838483 B1 KR100838483 B1 KR 100838483B1
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- film
- etching
- oxide film
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 13
- 238000007254 oxidation reaction Methods 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000004140 cleaning Methods 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (8)
- 게이트 절연막과 게이트 도전막이 형성된 기판을 준비하는 단계;상기 게이트 도전막을 식각하여 게이트 패턴을 형성하는 단계;상기 게이트 패턴의 일부를 산화시켜 열 산화막을 형성하는 단계; 및상기 열 산화막을 제거하는 단계를 포함하되,상기 열 산화막을 형성하는 단계는 상기 게이트 패턴을 형성하는 단계 후 상기 게이트 패턴이 테이퍼 프로파일을 갖는 부분이 모두 산화되도록 실시하는 반도체 소자의 게이트 식각방법.
- 제 1 항에 있어서,상기 게이트 패턴을 형성하는 단계는 상기 기판이 손실되지 않도록 실시하는 반도체 소자의 게이트 식각방법.
- 제 1 항에 있어서,상기 게이트 패턴을 형성하는 단계는 상기 게이트 절연막이 노출될 때까지 실시하는 반도체 소자의 게이트 식각방법.
- 제 1 항에 있어서,상기 게이트 도전막은 다결정 실리콘막으로 형성하는 반도체 소자의 게이트 식각방법.
- 제 1 항에 있어서,상기 열 산화막을 형성하는 단계는 1000~1100℃의 온도에서 실시하는 반도체 소자의 게이트 식각방법.
- 제 1 항 또는 제 5 항에 있어서,상기 열 산화막은 50~100Å의 두께로 형성하는 반도체 소자의 게이트 식각방법.
- 삭제
- 제 1 항에 있어서,상기 열 산화막을 제거하는 공정은 DHF(Dilute HF) 또는 BOE(Buffered Oxide Etchant) 용액을 이용하여 실시하는 반도체 소자의 게이트 식각방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060133854A KR100838483B1 (ko) | 2006-12-26 | 2006-12-26 | 반도체 소자의 게이트 식각방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060133854A KR100838483B1 (ko) | 2006-12-26 | 2006-12-26 | 반도체 소자의 게이트 식각방법 |
Publications (1)
Publication Number | Publication Date |
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KR100838483B1 true KR100838483B1 (ko) | 2008-06-16 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020060133854A KR100838483B1 (ko) | 2006-12-26 | 2006-12-26 | 반도체 소자의 게이트 식각방법 |
Country Status (1)
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KR (1) | KR100838483B1 (ko) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980080423A (ko) * | 1997-03-18 | 1998-11-25 | 니시무로타이조 | 반도체장치의 제조방법 및 반도체의 제조장치 |
KR20030054911A (ko) * | 2001-12-26 | 2003-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 형성 방법 |
KR20040059877A (ko) * | 2002-12-30 | 2004-07-06 | 주식회사 하이닉스반도체 | 게이트재산화법을 이용한 반도체 소자의 제조 방법 |
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2006
- 2006-12-26 KR KR1020060133854A patent/KR100838483B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980080423A (ko) * | 1997-03-18 | 1998-11-25 | 니시무로타이조 | 반도체장치의 제조방법 및 반도체의 제조장치 |
KR20030054911A (ko) * | 2001-12-26 | 2003-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 형성 방법 |
KR20040059877A (ko) * | 2002-12-30 | 2004-07-06 | 주식회사 하이닉스반도체 | 게이트재산화법을 이용한 반도체 소자의 제조 방법 |
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