KR100791112B1 - 절삭공구용 고경도 cvd 다원소 복합막 - Google Patents
절삭공구용 고경도 cvd 다원소 복합막 Download PDFInfo
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- KR100791112B1 KR100791112B1 KR1020050128351A KR20050128351A KR100791112B1 KR 100791112 B1 KR100791112 B1 KR 100791112B1 KR 1020050128351 A KR1020050128351 A KR 1020050128351A KR 20050128351 A KR20050128351 A KR 20050128351A KR 100791112 B1 KR100791112 B1 KR 100791112B1
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- metals
- film
- wear resistance
- boron
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/28—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass cutting tools
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
반응조건 | 반응온도: 880℃, 반응압력: 90mbar, 코팅시간: 320분 |
주요 반응가스 | 1.4vol.%TiCl4, 0.78vol.%ZrCl4, 0.64vol.%CH3CN, 27.5vol.%BCl3, 27.4 vol.%N2, H2 for balance |
종래기술 | TiZrCN | 약 31.0 GPa |
종래기술 | TiHfCN | 약 32.4 GPa |
본 특허기술 | TiZrBCN | 약 36.8 GPa |
Claims (6)
- 화학증착법을 이용하여, 초경합금, 써메트 및 탄소강, 합금강, 또는 고속도강의 공구강의 표면에 증착되는 경질박막에 있어서, 주기율표 상의 IV족, V족, VI족 금속 중에서 두 개 이상의 금속 또는, 이들의 혼합물 및 화합물의 카바이드, 나이트라이드, 카보니트라이드, 옥시카보니트라이드, 및/또는 카바이드, 나이트라이드, 카보니트라이드, 옥시카보니트라이드에 반드시 보론이 포함되는 화합물 중 하나 이상의 경질 박막으로 구성되는 고경도 CVD 다원소 복합막으로서, 상기 경질 박막 증착은 700~900℃인 중온 화학증착법(MTCVD)에 의해 증착되며, 상기 증착된 경질 박막은 30~37GPa의 경도를 갖고 있으며, 상기 증착된 경질박막의 하나 이상의 층은 그 조성이 (M1x, M2y)(BuCvNw)이며, 여기서 M1과 M2는 주기율표 상의 IV족, V족, VI족 금속 또는 이들의 혼합물, 화합물이고, x+y=1, x>y, 0.01<y<0.35, u+v+w=1, 0.001<u<0.01의 조건을 만족시키는 것임을 특징으로 하는 고경도 CVD 다원소 복합막.
- 삭제
- 삭제
- 제 1 항에 있어서, 상기 경질 박막은 다원소 복합막의 한층이상이거나다층 박막의 한 층으로 이루어지고 증착된 고경도 경질 박막의 적어도 하나 이상의 층은 (Tix, Zry)(BuCvNw)이며, x+y=1, x>y, 0.01<y<0.35, u+v+w=1, 0.001<u<0.01, Zr은 1at%이상, B는 0.5at%이상을 포함함을 특징으로 하는 고경도 CVD 다원소 복합막.
- 삭제
- 삭제
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KR1020050128351A KR100791112B1 (ko) | 2005-12-23 | 2005-12-23 | 절삭공구용 고경도 cvd 다원소 복합막 |
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KR1020050128351A KR100791112B1 (ko) | 2005-12-23 | 2005-12-23 | 절삭공구용 고경도 cvd 다원소 복합막 |
Publications (2)
Publication Number | Publication Date |
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KR20070067260A KR20070067260A (ko) | 2007-06-28 |
KR100791112B1 true KR100791112B1 (ko) | 2008-01-04 |
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KR1020050128351A KR100791112B1 (ko) | 2005-12-23 | 2005-12-23 | 절삭공구용 고경도 cvd 다원소 복합막 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07145483A (ja) * | 1993-11-19 | 1995-06-06 | Toshiba Tungaloy Co Ltd | 耐摩耗性被覆部材 |
JPH07173608A (ja) * | 1993-12-17 | 1995-07-11 | Toshiba Tungaloy Co Ltd | 耐摩耗性被覆部材 |
KR20010105364A (ko) * | 1999-03-02 | 2001-11-28 | 케나메탈 아이엔씨. | 중온 화학증착 공정 |
JP2003260606A (ja) | 2002-03-08 | 2003-09-16 | Hitachi Tool Engineering Ltd | 硬質皮膜被覆工具及びその製法 |
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- 2005-12-23 KR KR1020050128351A patent/KR100791112B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07145483A (ja) * | 1993-11-19 | 1995-06-06 | Toshiba Tungaloy Co Ltd | 耐摩耗性被覆部材 |
JPH07173608A (ja) * | 1993-12-17 | 1995-07-11 | Toshiba Tungaloy Co Ltd | 耐摩耗性被覆部材 |
KR20010105364A (ko) * | 1999-03-02 | 2001-11-28 | 케나메탈 아이엔씨. | 중온 화학증착 공정 |
JP2003260606A (ja) | 2002-03-08 | 2003-09-16 | Hitachi Tool Engineering Ltd | 硬質皮膜被覆工具及びその製法 |
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