KR100783840B1 - 산화막 형성 방법 및 전자 디바이스 재료 - Google Patents
산화막 형성 방법 및 전자 디바이스 재료 Download PDFInfo
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- KR100783840B1 KR100783840B1 KR1020057000687A KR20057000687A KR100783840B1 KR 100783840 B1 KR100783840 B1 KR 100783840B1 KR 1020057000687 A KR1020057000687 A KR 1020057000687A KR 20057000687 A KR20057000687 A KR 20057000687A KR 100783840 B1 KR100783840 B1 KR 100783840B1
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000000463 material Substances 0.000 title claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000012545 processing Methods 0.000 claims abstract description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 239000001257 hydrogen Substances 0.000 abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 11
- 150000002431 hydrogen Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 178
- 239000004065 semiconductor Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 238000005259 measurement Methods 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003685 thermal hair damage Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
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- 238000000572 ellipsometry Methods 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019071 Mg—Ka Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000000560 X-ray reflectometry Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- -1 hydrochloric acid peroxide Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (42)
- 희가스, 산소 가스 및 수소 가스를 포함하는 처리 가스의 존재하에서, 희가스, 산소 가스 및 수소 가스에 근거하는 플라즈마를 전자 디바이스용 기재의 표면에 조사하여, 해당 전자 디바이스용 기재의 표면에 산화막을 형성하며,상기 플라즈마는 평면 안테나에 근거하는 마이크로파 플라즈마이며,상기 플라즈마의 전자 온도는 1.5eV 이하인 것을 특징으로 하는 산화막 형성 방법.
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- 전자 디바이스용 기재상에 산화막을 형성하는 방법으로서,해당 기재를 희불산 용액으로 세정하고,해당 기재를 플라즈마 챔버에 반입하며,챔버내에 희가스, 산소 가스, 수소 가스를 포함하는 처리 가스를 도입하고,챔버내에서 처리 가스를, 플라즈마를 생성하여 해당 기재에 조사해서 산화막을 형성하며,상기 플라즈마는 평면 안테나에 근거하는 마이크로파 플라즈마이며,상기 플라즈마의 전자 온도는 1.5eV 이하인 것을 특징으로 하는 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,상기 전자 디바이스용 기재는 액정 디바이스용 기재 또는 실리콘을 주성분으로 하는 재료인 산화막 형성 방법.
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- 제 1 항 또는 제 12 항에 있어서,상기 평면 안테나는 슬롯을 갖는 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,상기 처리 가스에서의 산소 가스와 수소 가스의 비는 O2/H2=1:2~2:1인 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,상기 산화막을 형성하는 온도는 실온~500℃인 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,상기 산화막을 형성하는 압력은 66.7~266.6㎩인 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,H2/O2/희가스의 유량비는 0.5:0.5:100~2:2:100인 산화막 형성 방법.
- 제 1 항 또는 제 12 항에 있어서,상기 희가스는 Ar, Kr, He으로 이루어지는 산화막 형성 방법.
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- 제 1 항 또는 제 12 항에 있어서,상기 플라즈마의 전자 온도는 1.0eV 이하인 산화막 형성 방법.
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2002208803 | 2002-07-17 | ||
JPJP-P-2002-00208803 | 2002-07-17 | ||
PCT/JP2003/009111 WO2004008519A1 (ja) | 2002-07-17 | 2003-07-17 | 酸化膜形成方法および電子デバイス材料 |
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KR1020077017648A Division KR100930432B1 (ko) | 2002-07-17 | 2003-07-17 | 산화막 형성 방법 및 전자 디바이스 재료 |
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KR20050021475A KR20050021475A (ko) | 2005-03-07 |
KR100783840B1 true KR100783840B1 (ko) | 2007-12-10 |
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KR1020057000687A KR100783840B1 (ko) | 2002-07-17 | 2003-07-17 | 산화막 형성 방법 및 전자 디바이스 재료 |
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US (1) | US20050136610A1 (ko) |
JP (1) | JP4401290B2 (ko) |
KR (2) | KR100930432B1 (ko) |
AU (1) | AU2003252213A1 (ko) |
TW (1) | TWI235433B (ko) |
WO (1) | WO2004008519A1 (ko) |
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JP4965849B2 (ja) * | 2004-11-04 | 2012-07-04 | 東京エレクトロン株式会社 | 絶縁膜形成方法およびコンピュータ記録媒体 |
US7625783B2 (en) | 2005-11-23 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and method for manufacturing the same |
JP5183910B2 (ja) * | 2005-11-23 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 半導体素子の作製方法 |
US7989364B2 (en) | 2006-08-28 | 2011-08-02 | National University Corporation Nagoya University | Plasma oxidation processing method |
WO2008038788A1 (fr) | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Procédé de formation d'un film d'oxyde de silicium, appareil de traitement au plasma et support de stockage |
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JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
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KR20050021475A (ko) | 2005-03-07 |
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TW200414355A (en) | 2004-08-01 |
US20050136610A1 (en) | 2005-06-23 |
JPWO2004008519A1 (ja) | 2005-11-17 |
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JP4401290B2 (ja) | 2010-01-20 |
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