KR100779551B1 - 웨이퍼 지지 부재 및 이것을 이용한 반도체 제조장치 - Google Patents
웨이퍼 지지 부재 및 이것을 이용한 반도체 제조장치 Download PDFInfo
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- KR100779551B1 KR100779551B1 KR1020050101351A KR20050101351A KR100779551B1 KR 100779551 B1 KR100779551 B1 KR 100779551B1 KR 1020050101351 A KR1020050101351 A KR 1020050101351A KR 20050101351 A KR20050101351 A KR 20050101351A KR 100779551 B1 KR100779551 B1 KR 100779551B1
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- South Korea
- Prior art keywords
- conductive layer
- wafer
- support member
- ceramic body
- hole
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
전기저항 변화율 | |||||||
시료No. | 성막 처리 온도(℃) | 200 | 200 | 300 | 300 | 500 | 500 |
가열 냉각회수 땜납재 성분 | 50 | 100 | 50 | 100 | 50 | 100 | |
1. | Au-Ni | 2% | 2% | 2% | 2% | 3% | 5% |
2. | Au-Ni | 2% | 2% | 2% | 2% | 3% | 4% |
3. | Au-Ni | 2% | 2% | 2% | 2% | 3% | 5% |
4. | Ag-Cu | 2% | 2% | 2% | 2% | 2% | 2% |
*5. | Au-Ni | 2% | 2% | 3% | 5% | 20% | 단선 |
*6. | Au-Ni | 2% | 2% | 3% | 10% | 50% | 70사이클에서 단선 |
Claims (11)
- 한 쪽의 주면을 웨이퍼를 싣는 적재면으로 하고, 상기 한 쪽의 주면으로부터 다른 쪽의 주면으로 관통하는 관통공을 갖는 판 형상 세라믹체;상기 적재면에 형성된 도전층;상기 도전층과 접속되도록 상기 관통공의 내표면에 형성된 접속 도전층;상기 접속 도전층과 접속되도록 상기 판 형상 세라믹체에 매설된 매설 도전층; 및일단과 타단을 가지며, 상기 일단의 근방에서 상기 매설 도전층과 접속되고, 또한 타단이 상기 세라믹체의 다른 쪽의 주면으로부터 돌출하도록, 상기 판 형상 세라믹체의 상기 관통공으로부터 떨어진 위치에 배치된 통전단자를 가지는 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항에 있어서, 상기 관통공에 연통하도록 접합된 도전성의 파이프를 더 가지며, 상기 통전단자가 상기 파이프에 접속된 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항에 있어서, 상기 매설 도전층은 상기 적재면에 평행한 원형의 도체층으로 이루어지며, 상기 매설 도전층의 외경이 5mm~100mm인 것을 특징으로 하는 웨이퍼 지지 부재.
- 한 쪽의 주면을 웨이퍼를 싣는 적재면으로 하고, 상기 한 쪽의 주면으로부터 다른 쪽의 주면으로 관통하는 관통공을 가지는 판 형상 세라믹체;상기 적재면에 형성된 도전층;상기 도전층과 접속되도록 상기 관통공의 내표면에 형성된 접속 도전층; 및상기 관통공에 연통하도록 접합된 도전성 파이프를 가지며:상기 접속 도전층과 상기 도전성 파이프를 접속하여, 상기 파이프를 통전단자로 한 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 접속 도전층이 은과 동을 주성분으로 하는 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 도전층은 상기 관통공의 내주면에 연장하여 형성되고, 그 연장 부분에서 상기 접속 도전층에 접속된 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 도전층은 적재면 위의 중앙에 형성된 중앙 도전층과, 이 중앙 도전층과 전기적으로 분리되도록 상기 적재면의 주변부에 형성된 주변 도전층을 포함하는 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 도전층이 웨이퍼 검지용으로서 형성된 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 판 형상 세라믹스체가 정전 흡착용 전극을 더 구비한 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 있어서, 상기 판 형상 세라믹체에 히터 전극을 구비한 것을 특징으로 하는 웨이퍼 지지 부재.
- 제 1항 또는 제 4항에 기재된 웨이퍼 지지 부재를 포함하는 것을 특징으로 하는 반도체 제조장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004311243A JP4365766B2 (ja) | 2004-10-26 | 2004-10-26 | ウェハ支持部材とそれを用いた半導体製造装置 |
JPJP-P-2004-00311243 | 2004-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060049383A KR20060049383A (ko) | 2006-05-18 |
KR100779551B1 true KR100779551B1 (ko) | 2007-11-27 |
Family
ID=36385133
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Application Number | Title | Priority Date | Filing Date |
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KR1020050101351A KR100779551B1 (ko) | 2004-10-26 | 2005-10-26 | 웨이퍼 지지 부재 및 이것을 이용한 반도체 제조장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7326886B2 (ko) |
JP (1) | JP4365766B2 (ko) |
KR (1) | KR100779551B1 (ko) |
CN (1) | CN100359663C (ko) |
TW (1) | TWI299539B (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8013981B2 (en) * | 2007-06-14 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
US8064185B2 (en) * | 2008-09-05 | 2011-11-22 | Applied Materials, Inc. | Electrostatic chuck electrical balancing circuit repair |
CN101770971B (zh) * | 2008-12-31 | 2012-06-20 | 中芯国际集成电路制造(上海)有限公司 | 晶圆承载装置 |
WO2010151839A1 (en) * | 2009-06-26 | 2010-12-29 | Evo, Inc. | Electric cooking apparatus |
KR101025265B1 (ko) * | 2009-09-10 | 2011-03-29 | 가부시키가이샤 어드밴티스트 | 통전 부재, 접속 부재, 시험 장치 및 접속 부재를 수선하는 방법 |
US9082804B2 (en) | 2011-02-07 | 2015-07-14 | Varian Semiconductor Equipment Associates, Inc. | Triboelectric charge controlled electrostatic clamp |
KR101412636B1 (ko) * | 2012-09-28 | 2014-06-27 | 세메스 주식회사 | 지지 유닛 및 이를 포함하는 기판 처리 장치, 그리고 지지 유닛 제조 방법 |
US9691644B2 (en) | 2012-09-28 | 2017-06-27 | Semes Co., Ltd. | Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit |
US9129895B2 (en) * | 2013-10-09 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | In situ real-time wafer breakage detection |
JP6280012B2 (ja) * | 2014-09-29 | 2018-02-14 | 京セラ株式会社 | 試料保持具 |
US10177024B2 (en) * | 2015-05-12 | 2019-01-08 | Lam Research Corporation | High temperature substrate pedestal module and components thereof |
US9738975B2 (en) * | 2015-05-12 | 2017-08-22 | Lam Research Corporation | Substrate pedestal module including backside gas delivery tube and method of making |
JP6767826B2 (ja) * | 2016-09-23 | 2020-10-14 | 日本特殊陶業株式会社 | 加熱装置 |
US10147610B1 (en) | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
JP7140610B2 (ja) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | プラズマ処理装置 |
WO2021010063A1 (ja) * | 2019-07-16 | 2021-01-21 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
JP7494973B1 (ja) | 2023-03-27 | 2024-06-04 | Toto株式会社 | 静電チャック |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10326823A (ja) | 1997-04-01 | 1998-12-08 | Applied Materials Inc | セラミック体のための導電性フィードスルー及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3457477B2 (ja) * | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | 静電チャック |
JP3488334B2 (ja) * | 1996-04-15 | 2004-01-19 | 京セラ株式会社 | 静電チャック |
US6075375A (en) * | 1997-06-11 | 2000-06-13 | Applied Materials, Inc. | Apparatus for wafer detection |
JPH11354260A (ja) * | 1998-06-11 | 1999-12-24 | Shin Etsu Chem Co Ltd | 複層セラミックスヒータ |
US6444957B1 (en) * | 2000-04-26 | 2002-09-03 | Sumitomo Osaka Cement Co., Ltd | Heating apparatus |
JP3886770B2 (ja) | 2001-10-29 | 2007-02-28 | 京セラ株式会社 | ウェハ保持装置 |
US6538872B1 (en) * | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
JP3906087B2 (ja) * | 2002-01-30 | 2007-04-18 | 京セラ株式会社 | ウエハ支持部材 |
-
2004
- 2004-10-26 JP JP2004311243A patent/JP4365766B2/ja active Active
-
2005
- 2005-10-25 TW TW094137331A patent/TWI299539B/zh active
- 2005-10-26 US US11/260,674 patent/US7326886B2/en active Active
- 2005-10-26 CN CNB200510118052XA patent/CN100359663C/zh not_active Expired - Fee Related
- 2005-10-26 KR KR1020050101351A patent/KR100779551B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10326823A (ja) | 1997-04-01 | 1998-12-08 | Applied Materials Inc | セラミック体のための導電性フィードスルー及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1779940A (zh) | 2006-05-31 |
JP2006128203A (ja) | 2006-05-18 |
CN100359663C (zh) | 2008-01-02 |
US7326886B2 (en) | 2008-02-05 |
KR20060049383A (ko) | 2006-05-18 |
US20060102595A1 (en) | 2006-05-18 |
TW200625507A (en) | 2006-07-16 |
TWI299539B (en) | 2008-08-01 |
JP4365766B2 (ja) | 2009-11-18 |
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