KR100776150B1 - 이미지센서 제조 방법 - Google Patents
이미지센서 제조 방법 Download PDFInfo
- Publication number
- KR100776150B1 KR100776150B1 KR1020010065454A KR20010065454A KR100776150B1 KR 100776150 B1 KR100776150 B1 KR 100776150B1 KR 1020010065454 A KR1020010065454 A KR 1020010065454A KR 20010065454 A KR20010065454 A KR 20010065454A KR 100776150 B1 KR100776150 B1 KR 100776150B1
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- South Korea
- Prior art keywords
- ion implantation
- field insulating
- image sensor
- photodiode
- forming
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005468 ion implantation Methods 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 208000013469 light sensitivity Diseases 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
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- 235000009120 camo Nutrition 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 230000036211 photosensitivity Effects 0.000 description 1
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- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (7)
- 반도체층 상에 국부적으로 필드절연막을 형성하는 단계;상기 필드절연막과 이격되도록 상기 반도체층 상에 트랜스퍼 게이트를 형성하는 단계;상기 트랜스퍼 게이트의 일측과 접하도록 상기 반도체층 내에 포토다이오드용 제1 불순물 영역을 형성하는 단계상기 제1 불순물 영역 상에 포토다이오드용 제2 불순물 영역을 형성하는 단계;상기 필드절연막 형성시 사용된 마스크와 동일하게 정의된 이온주입마스크를 이용한 제1 이온주입공정을 실시하여 상기 제1 불순물 영역과 서로 다른 도전형의 불순물을 주입하는 단계;상기 제1 이온주입공정보다 낮은 도즈로 상기 이온주입마스크를 이용한 제2 이온주입공정을 실시하여 상기 제1 불순물 영역과 서로 다른 도전형의 불순물을 주입하는 단계; 및열처리 공정을 통해 상기 제2 이온주입공정시 주입된 불순물을 상기 필드절연막과 상기 제1 불순물 영역이 접하는 부위로 확산시켜 상기 필드절연막과 상기 포토다이오드를 분리시키는 단계를 포함하는 이미지센서 제조 방법.
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서,상기 제1 이온주입공정은, 1.0E19/㎤ 내지 1.0E21/㎤ 농도의 불순물을 이용하여 35KeV 내지 45KeV의 에너지를 이용하여 실시하고, 상기 제2 이온주입공정은 1.0E17/㎤ 내지 1.0E18/㎤ 농도의 불순물을 이용하여 25KeV 내지 35KeV의 에너지를 이용하여 실시하는 이미지센서 제조 방법.
- 제 5 항에 있어서,상기 제1 이온주입공정은 BF2를 소스로 하며, 상기 제2 이온주입공정은 B11을 소스로 하여 실시하는 이미지센서 제조 방법.
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010065454A KR100776150B1 (ko) | 2001-10-23 | 2001-10-23 | 이미지센서 제조 방법 |
Applications Claiming Priority (1)
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KR1020010065454A KR100776150B1 (ko) | 2001-10-23 | 2001-10-23 | 이미지센서 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030034499A KR20030034499A (ko) | 2003-05-09 |
KR100776150B1 true KR100776150B1 (ko) | 2007-11-15 |
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KR1020010065454A KR100776150B1 (ko) | 2001-10-23 | 2001-10-23 | 이미지센서 제조 방법 |
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KR (1) | KR100776150B1 (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251569A (ja) * | 1998-01-08 | 1999-09-17 | Internatl Business Mach Corp <Ibm> | 接地ボディ・コンタクトを有するsoiアクティブ・ピクセル・セル設計 |
KR20000041462A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 핀드 포토다이오드를 갖는 이미지센서 제조방법 |
KR20000041443A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 깊은 필드스탑층을 갖는 씨모스이미지센서 |
JP2000353801A (ja) * | 1999-06-14 | 2000-12-19 | Mitsubishi Electric Corp | 固体撮像素子を有する半導体装置およびその製造方法 |
-
2001
- 2001-10-23 KR KR1020010065454A patent/KR100776150B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251569A (ja) * | 1998-01-08 | 1999-09-17 | Internatl Business Mach Corp <Ibm> | 接地ボディ・コンタクトを有するsoiアクティブ・ピクセル・セル設計 |
KR20000041462A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 핀드 포토다이오드를 갖는 이미지센서 제조방법 |
KR20000041443A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 깊은 필드스탑층을 갖는 씨모스이미지센서 |
JP2000353801A (ja) * | 1999-06-14 | 2000-12-19 | Mitsubishi Electric Corp | 固体撮像素子を有する半導体装置およびその製造方法 |
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Publication number | Publication date |
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KR20030034499A (ko) | 2003-05-09 |
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