KR100745854B1 - 화학 증착 방법 - Google Patents
화학 증착 방법 Download PDFInfo
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- KR100745854B1 KR100745854B1 KR1020057023043A KR20057023043A KR100745854B1 KR 100745854 B1 KR100745854 B1 KR 100745854B1 KR 1020057023043 A KR1020057023043 A KR 1020057023043A KR 20057023043 A KR20057023043 A KR 20057023043A KR 100745854 B1 KR100745854 B1 KR 100745854B1
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- 239000000758 substrate Substances 0.000 claims abstract description 78
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 23
- 230000005684 electric field Effects 0.000 claims abstract description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 81
- 238000012545 processing Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 185
- 235000012431 wafers Nutrition 0.000 description 128
- 239000010936 titanium Substances 0.000 description 38
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- 230000002093 peripheral effect Effects 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 238000004049 embossing Methods 0.000 description 8
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- 238000010586 diagram Methods 0.000 description 5
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- 150000004767 nitrides Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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Abstract
Description
Claims (11)
- 처리 챔버내에 형성된 고주파 전계에 의해 플라즈마를 생성하고, 서셉터상에 탑재되어 상기 서셉터에 마련된 발열체에 의해 서셉터를 거쳐서 가열되는 기판에 상기 플라즈마를 이용하여 박막을 형성하는 화학 증착 방법에 있어서,박막의 형성이 개시되기 전에, 상기 서셉터에 마련되는 기판 지지 핀이 상승하여 피처리 기판을 유지한 상태에서, 기판의 예비 가열을 실행하는 것을 특징으로 하는화학 증착 방법.
- 제 1 항에 있어서,상기 예비 가열은 상기 처리 챔버내에 가스를 도입하면서 실행되는 것을 특징으로 하는화학 증착 방법.
- 제 1 항에 있어서,상승한 상기 기판 지지 핀 상에 기판이 지지된 상태에서 실행되는 상기 예비 가열을 한 후, 상기 기판 지지 핀을 강하시켜서 기판을 상기 서셉터에 탑재된 상태에서 다시 예비 가열을 실행하고, 그 후 박막의 형성을 개시하는 것을 특징으로 하는화학 증착 방법.
- 제 3 항에 있어서,상기 기판 지지 핀 상에 기판이 지지된 상태에서 실행되는 예비 가열 및 상기 서셉터상에 기판이 탑재된 상태에서 실행되는 예비 가열은, 어느 것이나 상기 처리 챔버내에 가스를 도입하면서 실행되는 것을 특징으로 하는화학 증착 방법.
- 제 1 항에 있어서,상기 서셉터의 기판 탑재 영역의 적어도 주연부의 표면은 평탄하게 형성되고, 상기 서셉터는, 상기 서셉터에 기판을 탑재했을 때에 상기 주연부에 대향하는 기판의 표면이 상기 주연부의 표면과 면접촉하도록 구성되어 있는 것을 특징으로 하는화학 증착 방법.
- 처리 챔버내에 형성된 고주파 전계에 의해 플라즈마를 생성하고, 서셉터상에 탑재되어 상기 서셉터에 마련된 발열체에 의해 서셉터를 거쳐서 가열되는 기판에 상기 플라즈마를 이용하여 박막을 형성하는 화학 증착 방법에 있어서,기판을 상기 처리 챔버내에 반입하고, 상기 서셉터에 마련된 기판 지지 핀을 상승시켜서 상기 핀 상에서 기판을 지지하는 공정과,상기 기판 지지 핀 상에 기판을 지지한 상태에서, 상기 발열체로 상기 서셉터를 가열하면서 진공 배기되어 있는 상기 처리 챔버내에 가스를 도입하여 기판의 제 1 예비 가열을 실행하는 공정과,상기 처리 챔버내를 진공 배기한 상태에서 가스의 도입을 정지하고, 상기 기판 지지 핀을 하강시켜서 기판을 상기 서셉터에 탑재하는 공정과,기판을 상기 서셉터에 탑재한 상태에서 상기 처리 챔버내에 가스를 도입하여 기판의 제 2 예비 가열을 실행하는 공정과,상기 처리 챔버내에 플라즈마를 생성하는 공정과,상기 처리 챔버내에 성막 가스를 공급하여 기판에 성막을 실행하는 공정을 구비하는 것을 특징으로 하는화학 증착 방법.
- 제 6 항에 있어서,상기 박막은 Ti 박막이며, 상기 성막 가스를 공급하는 공정에 있어서 Ti를 포함하는 성막 가스 및 환원 가스가 상기 처리 챔버내에 공급되는 것을 특징으로 하는화학 증착 방법.
- 제 6 항에 있어서,상기 제 2 예비 가열을 실행하는 공정 전에, 기판을 상기 서셉터에 탑재한 상태에서, 상기 제 2 예비 가열을 실행하는 공정에 있어서 상기 처리 챔버내에 공급되는 가스를 상기 처리 챔버내의 상기 가스의 압력이 서서히 상승하도록 상기 처리 챔버에 공급하는 공정을 더 구비하는 것을 특징으로 하는화학 증착 방법.
- 제 6 항에 있어서,상기 플라즈마를 생성하는 공정에 있어서, 고주파 전계의 강도를 서서히 상승시키는 것을 특징으로 하는화학 증착 방법.
- 제 6 항에 있어서,상기 플라즈마를 생성하는 공정 전에, 상기 처리 챔버내에 성막 가스를 공급하는 공정을 더 구비하는 것을 특징으로 하는화학 증착 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2003-00270044 | 2003-07-01 | ||
JP2003270044A JP4330949B2 (ja) | 2003-07-01 | 2003-07-01 | プラズマcvd成膜方法 |
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KR1020077003974A Division KR100749375B1 (ko) | 2003-07-01 | 2004-07-01 | 플라즈마 화학 증착 장치 |
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KR20060017834A KR20060017834A (ko) | 2006-02-27 |
KR100745854B1 true KR100745854B1 (ko) | 2007-08-02 |
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US (1) | US20060231032A1 (ko) |
JP (1) | JP4330949B2 (ko) |
KR (1) | KR100745854B1 (ko) |
CN (2) | CN101481798B (ko) |
WO (1) | WO2005003403A1 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100887446B1 (ko) * | 2005-06-24 | 2009-03-10 | 도쿄엘렉트론가부시키가이샤 | 가스 처리 방법 및 컴퓨터 판독 가능한 기억 매체 |
US8076252B2 (en) * | 2005-07-28 | 2011-12-13 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
JP4724487B2 (ja) * | 2005-08-02 | 2011-07-13 | 横浜ゴム株式会社 | タイヤ加硫成形用金型の洗浄方法及びその装置 |
JP4810281B2 (ja) * | 2006-03-31 | 2011-11-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8043471B2 (en) | 2006-03-31 | 2011-10-25 | Tokyo Electron Limited | Plasma processing apparatus |
JP4929811B2 (ja) * | 2006-04-05 | 2012-05-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7763522B2 (en) * | 2007-08-01 | 2010-07-27 | United Microelectronic Corp. | Method of high density plasma gap-filling with minimization of gas phase nucleation |
NL1034780C2 (nl) * | 2007-11-30 | 2009-06-03 | Xycarb Ceramics B V | Inrichting voor het laagsgewijs laten neerslaan van verschillende materialen op een halfgeleider-substraat alsmede een hefpin voor toepassing in een dergelijke inrichting. |
WO2010008021A1 (ja) * | 2008-07-15 | 2010-01-21 | キヤノンアネルバ株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN101556926B (zh) * | 2009-05-19 | 2012-08-08 | 上海宏力半导体制造有限公司 | 在半导体基底上形成氮化钛层的方法 |
DE102011007682A1 (de) * | 2011-04-19 | 2012-10-25 | Siltronic Ag | Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe |
KR101390809B1 (ko) | 2012-06-28 | 2014-04-30 | 세메스 주식회사 | 기판 반전 장치 및 방법 |
KR101387518B1 (ko) * | 2012-08-28 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
CN104979237B (zh) * | 2014-04-11 | 2018-03-09 | 北京北方华创微电子装备有限公司 | 半导体加工设备 |
US10325789B2 (en) * | 2016-01-21 | 2019-06-18 | Applied Materials, Inc. | High productivity soak anneal system |
JP7018825B2 (ja) * | 2018-06-05 | 2022-02-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
JP2022532775A (ja) * | 2019-05-16 | 2022-07-19 | アプライド マテリアルズ インコーポレイテッド | 基板裏側の損傷を最小限に抑える方法及び装置 |
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JPH09115840A (ja) * | 1995-10-17 | 1997-05-02 | Hitachi Electron Eng Co Ltd | Cvd処理用ウエハ収容トレー |
JP2000260855A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | ウェハ処理装置 |
JP4480056B2 (ja) * | 1999-12-06 | 2010-06-16 | コバレントマテリアル株式会社 | 半導体基板の昇降温制御方法とその装置 |
US6461428B2 (en) * | 1999-12-06 | 2002-10-08 | Toshiba Ceramics Co., Ltd. | Method and apparatus for controlling rise and fall of temperature in semiconductor substrates |
JP4328003B2 (ja) * | 2000-10-19 | 2009-09-09 | 日本碍子株式会社 | セラミックヒーター |
JP4686867B2 (ja) * | 2001-02-20 | 2011-05-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2003332309A (ja) * | 2002-05-08 | 2003-11-21 | Hitachi High-Technologies Corp | 真空処理装置 |
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CN101481798A (zh) | 2009-07-15 |
CN1738922A (zh) | 2006-02-22 |
JP4330949B2 (ja) | 2009-09-16 |
WO2005003403A1 (ja) | 2005-01-13 |
CN101481798B (zh) | 2011-10-26 |
US20060231032A1 (en) | 2006-10-19 |
CN100471990C (zh) | 2009-03-25 |
JP2005023400A (ja) | 2005-01-27 |
KR20060017834A (ko) | 2006-02-27 |
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