KR100735936B1 - 기판처리장치용 부품 및 그 제조방법 - Google Patents
기판처리장치용 부품 및 그 제조방법 Download PDFInfo
- Publication number
- KR100735936B1 KR100735936B1 KR1020050105199A KR20050105199A KR100735936B1 KR 100735936 B1 KR100735936 B1 KR 100735936B1 KR 1020050105199 A KR1020050105199 A KR 1020050105199A KR 20050105199 A KR20050105199 A KR 20050105199A KR 100735936 B1 KR100735936 B1 KR 100735936B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate processing
- defect
- focus ring
- silicon carbide
- processing apparatus
- Prior art date
Links
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004327077A JP2006140238A (ja) | 2004-11-10 | 2004-11-10 | 基板処理装置用部品及びその製造方法 |
JPJP-P-2004-00327077 | 2004-11-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060052455A KR20060052455A (ko) | 2006-05-19 |
KR100735936B1 true KR100735936B1 (ko) | 2007-07-06 |
Family
ID=36620872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050105199A KR100735936B1 (ko) | 2004-11-10 | 2005-11-04 | 기판처리장치용 부품 및 그 제조방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2006140238A (zh) |
KR (1) | KR100735936B1 (zh) |
CN (2) | CN100388418C (zh) |
TW (1) | TW200634924A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
CN101357854B (zh) * | 2008-09-12 | 2012-07-25 | 西安交通大学 | 一种降低陶瓷热障涂层热导率的后处理方法 |
CN101748385B (zh) * | 2008-12-22 | 2012-05-09 | 深超光电(深圳)有限公司 | 用于化学气相沉积(cvd)的基板处理设备 |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
JP2012049220A (ja) * | 2010-08-25 | 2012-03-08 | Mitsui Eng & Shipbuild Co Ltd | 耐プラズマ部材およびその再生方法 |
KR101671671B1 (ko) * | 2016-05-25 | 2016-11-01 | 주식회사 티씨케이 | 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품 |
JP6812264B2 (ja) * | 2017-02-16 | 2021-01-13 | 東京エレクトロン株式会社 | 真空処理装置、及びメンテナンス装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0170907B1 (ko) * | 1995-10-25 | 1999-03-30 | 김주용 | 반도체 소자의 무결함층 제조방법 |
KR100203129B1 (ko) | 1995-12-15 | 1999-06-15 | 김영환 | 소오스/드레인 접합 잔류 결함 제거방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07211700A (ja) * | 1994-01-24 | 1995-08-11 | Sumitomo Metal Ind Ltd | プラズマ発生装置用電極及びその製造方法 |
JP3551867B2 (ja) * | 1999-11-09 | 2004-08-11 | 信越化学工業株式会社 | シリコンフォーカスリング及びその製造方法 |
US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
AU2003228226A1 (en) * | 2002-03-12 | 2003-09-29 | Tokyo Electron Limited | An improved substrate holder for plasma processing |
US20030198749A1 (en) * | 2002-04-17 | 2003-10-23 | Applied Materials, Inc. | Coated silicon carbide cermet used in a plasma reactor |
TW200416208A (en) * | 2002-11-12 | 2004-09-01 | Bridgestone Corp | Silicon carbide sintered product and method for production the same |
JP4432317B2 (ja) * | 2002-12-11 | 2010-03-17 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
-
2004
- 2004-11-10 JP JP2004327077A patent/JP2006140238A/ja active Pending
-
2005
- 2005-11-04 KR KR1020050105199A patent/KR100735936B1/ko active IP Right Grant
- 2005-11-08 TW TW094139134A patent/TW200634924A/zh not_active IP Right Cessation
- 2005-11-10 CN CNB2005101177866A patent/CN100388418C/zh not_active Expired - Fee Related
- 2005-11-10 CN CN2007101650261A patent/CN101244945B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0170907B1 (ko) * | 1995-10-25 | 1999-03-30 | 김주용 | 반도체 소자의 무결함층 제조방법 |
KR100203129B1 (ko) | 1995-12-15 | 1999-06-15 | 김영환 | 소오스/드레인 접합 잔류 결함 제거방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101244945B (zh) | 2013-05-29 |
CN101244945A (zh) | 2008-08-20 |
TW200634924A (en) | 2006-10-01 |
CN100388418C (zh) | 2008-05-14 |
TWI380360B (zh) | 2012-12-21 |
JP2006140238A (ja) | 2006-06-01 |
KR20060052455A (ko) | 2006-05-19 |
CN1790615A (zh) | 2006-06-21 |
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