KR100735934B1 - 선택적으로 도핑된 ⅲ-ⅴ 질화물층을 갖는 디바이스 및 발광 디바이스 - Google Patents
선택적으로 도핑된 ⅲ-ⅴ 질화물층을 갖는 디바이스 및 발광 디바이스 Download PDFInfo
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- KR100735934B1 KR100735934B1 KR1020017008987A KR20017008987A KR100735934B1 KR 100735934 B1 KR100735934 B1 KR 100735934B1 KR 1020017008987 A KR1020017008987 A KR 1020017008987A KR 20017008987 A KR20017008987 A KR 20017008987A KR 100735934 B1 KR100735934 B1 KR 100735934B1
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 62
- 239000002019 doping agent Substances 0.000 claims abstract description 60
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052718 tin Inorganic materials 0.000 claims abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 239000011777 magnesium Substances 0.000 claims abstract description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 18
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 18
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 18
- 239000011135 tin Substances 0.000 claims description 35
- 229910052738 indium Inorganic materials 0.000 claims description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 16
- 239000011701 zinc Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 10
- 238000005336 cracking Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 72
- 239000000463 material Substances 0.000 description 27
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 18
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 9
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 208000012868 Overgrowth Diseases 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 241001591005 Siga Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
Description
Claims (22)
- 기판과,상기 기판 상에 위치한 Ⅲ-Ⅴ 질화물층과,상기 Ⅲ-Ⅴ 질화물층 상에 위치한 활성층과,상기 활성층 상에 위치한 제 2 Ⅲ-Ⅴ 질화물층을 포함하되,상기 Ⅲ-Ⅴ 질화물층은 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 1 도펀트로 도핑되며, 이에 의해 응력이 제어되고, 상기 Ⅲ-Ⅴ 질화물층의 취성화(embrittlement)가 최소화되며,상기 Ⅲ-Ⅴ 질화물층은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 2 도펀트를 포함하되, 상기 제 2 도펀트의 농도는 상기 활성층에 가까울수록 달라지는반도체 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 2 도펀트를 포함하는 디바이스.
- 삭제
- 제 1 항에 있어서,상기 제 2 도펀트는 상기 활성층에 가까워질수록 농도가 증가하고,상기 제 1 도펀트는 상기 활성층으로부터 멀어질수록 농도가 증가하는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층의 제 1 부분은 실리콘, 게르마늄, 주석, 산소 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되고,상기 Ⅲ-Ⅴ 질화물층의 제 2 부분은 상기 제 1 부분에서 사용된 상기 도펀트와는 상이하며 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층의 다수의 제 1 부분은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되고,상기 Ⅲ-Ⅴ 질화물층의 다수의 제 2 부분은 상기 다수의 제 1 부분에서 사용된 상기 도펀트와는 상이하고 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되며,상기 다수의 제 1 부분 및 상기 다수의 제 2 부분은 교대로 배치되어, 초격자 구조가 형성되는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층 내에 도핑되지 않은 층을 포함하는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 상기 도펀트와는 상이한 도펀트를 사용하여 강하게 도핑된 부분을 포함하여 상기 활성층에 인접한 격자 파라미터를 증가시키는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 전도성이 높도록 강하게 도핑되어, 상기 디바이스에 대한 콘택트층이 되는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 다수의 도펀트를 포함하여, 상기 기판으로부터 상기 활성화층까지 상기 Ⅲ-Ⅴ 질화물층의 조성 및 특성을 선택적으로 변화시키는 디바이스.
- 제 1 항에 있어서,상기 Ⅲ-Ⅴ 질화물층 및 상기 제 2 Ⅲ-Ⅴ 질화물층은 두께가 10 옹스트롬 내지 10 미크론의 범위에 있는 디바이스.
- 알루미늄, 탄소, 갈륨, 인듐, 질소, 산소, 실리콘 및 이들의 조합물로 구성된 그룹으로부터 선택된 원소를 포함하는 기판과,상기 기판 상에 위치하며, 알루미늄, 갈륨, 인듐, 질소 및 이들의 조합물로 구성된 그룹으로부터 선택된 원소를 포함하는 Ⅲ-Ⅴ 질화물층과,상기 Ⅲ-Ⅴ 질화물층 상에 위치하며, 알루미늄, 갈륨, 인듐, 질소 및 이들의 조합물로 구성된 그룹으로부터 선택된 원소를 포함하는 활성층과,상기 활성층 상에 위치하며, 알루미늄, 갈륨, 인듐, 질소 및 이들의 조합물로 구성된 그룹으로부터 선택된 원소를 포함하는 제 2 Ⅲ-Ⅴ 질화물층을 포함하되,상기 Ⅲ-Ⅴ 질화물층은 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 1 도펀트로 도핑되고, 이에 의해 상기 Ⅲ-Ⅴ 질화물층의 압축 또는 인장 균열 발생 및 취성화가 최소화되고,상기 Ⅲ-Ⅴ 질화물층은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 2 도펀트를 포함하되, 상기 제 2 도펀트의 농도는 상기 활성층에 가까워질수록 달라지고, 그에 따라 상기 Ⅲ-Ⅴ 질화물층의 격자 상수가 상기 활성층의 격자 상수를 따라 달라지는발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 2 도펀트를 포함하는 발광 디바이스.
- 삭제
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 제 2 도펀트를 포함하되, 상기 제 2 도펀트는 상기 활성층에 가까울수록 농도가 증가하고,상기 제 1 도펀트는 상기 활성층으로부터 멀어질수록 농도가 증가하여, 상기 활성층으로부터의 높은 전도성 및 긴 파장 방출이 달성되는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층의 제 1 부분은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되고,상기 Ⅲ-Ⅴ 질화물층의 제 2 부분은 상기 제 1 부분보다 더 두꺼우며, 상기 제 1 부분에서 사용된 상기 도펀트와는 상이하고, 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층의 다수의 제 1 부분은 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되고,상기 Ⅲ-Ⅴ 질화물층의 다수의 제 2 부분은 상기 다수의 제 1 부분에서 사용된 상기 도펀트와는 상이하고, 실리콘, 게르마늄, 주석, 산소, 마그네슘, 베릴륨, 아연, 카드뮴 및 이들의 조합물로 구성된 그룹으로부터 선택된 도펀트로 도핑되며,각각의 상기 다수의 제 1 부분 및 각각의 상기 다수의 제 2 부분은 교대로 배치되어, 상기 디바이스 내의 전도성 및 응력이 제어되는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층 및 상기 제 2 Ⅲ-Ⅴ 질화물층 내에 다수의 도핑되지 않은 층을 포함하는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 상기 도펀트와는 상이한 도펀트를 사용하여 강하게 도핑된 부분을 포함하여 상기 활성층에 인접한 격자 파라미터를 증가시키는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 적어도 강하게 도핑된 부분을 포함하여, 콘택트층이 되는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층은 다수의 도펀트를 포함하여, 상기 기판으로부터 상기 활성화층까지 상기 Ⅲ-Ⅴ 질화물층의 조성 및 특성을 선택적으로 변화시키는 발광 디바이스.
- 제 12 항에 있어서,상기 Ⅲ-Ⅴ 질화물층 및 상기 제 2 질화물층은 두께가 10 옹스트롬 내지 10 미크론의 범위에 있는 디바이스.
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US09/442,590 | 1999-11-17 | ||
US09/442,590 US6441393B2 (en) | 1999-11-17 | 1999-11-17 | Semiconductor devices with selectively doped III-V nitride layers |
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US (1) | US6441393B2 (ko) |
EP (1) | EP1175694B1 (ko) |
JP (1) | JP5346146B2 (ko) |
KR (1) | KR100735934B1 (ko) |
AU (1) | AU1774001A (ko) |
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EP1175694B1 (en) | 2018-09-26 |
AU1774001A (en) | 2001-05-30 |
US20020008245A1 (en) | 2002-01-24 |
WO2001037321A3 (en) | 2001-10-11 |
JP5346146B2 (ja) | 2013-11-20 |
KR20010108105A (ko) | 2001-12-07 |
EP1175694A2 (en) | 2002-01-30 |
WO2001037321A2 (en) | 2001-05-25 |
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