KR100691486B1 - 반도체메모리소자 - Google Patents
반도체메모리소자 Download PDFInfo
- Publication number
- KR100691486B1 KR100691486B1 KR1020040054293A KR20040054293A KR100691486B1 KR 100691486 B1 KR100691486 B1 KR 100691486B1 KR 1020040054293 A KR1020040054293 A KR 1020040054293A KR 20040054293 A KR20040054293 A KR 20040054293A KR 100691486 B1 KR100691486 B1 KR 100691486B1
- Authority
- KR
- South Korea
- Prior art keywords
- pumping
- internal power
- power supply
- memory device
- level
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000005086 pumping Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (10)
- 삭제
- 삭제
- 삭제
- 삭제
- 제어신호에 응답하여 외부전원을 펌핑하여 내부전원전압을 생성하고 상기 내부전원전압의 레벨을 조정하기 위한 다수의 펌핑회로와,모드레지스터셋의 다수의 어드레스신호를 디코딩하여 상기 다수의 펌핑회로를 선택적으로 구동하기 위한 제어신호를 생성하기 위한 디코딩수단을 구비하는 반도체메모리소자.
- 제5항에 있어서,상기 모드레지스터셋의 제1 내지 제4 어드레스신호는 구동될 펌핑회로의 수를 결정하는 것을 특징으로 하는 반도체메모리소자.
- 제6항에 있어서,상기 모드레지스터셋의 제5 어드레스신호는 상기 다수의 핌핑회로의 활성화 여부를 결정하는 것을 특징으로 하는 반도체메모리소자.
- 제7항에 있어서,상기 펌핑회로는,상기 외부전원을 펌핑하여 상기 외부전원의 레벨보다 낮은 내부전원전압을 생성하는 것을 특징으로 하는 반도체메모리소자.
- 제7항에 있어서,상기 펌핑회로는,상기 외부전원을 펌핑하여 상기 외부전원의 레벨보다 높은 내부전원전압을 생성하는 것을 특징으로 하는 반도체메모리소자.
- 삭제
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040054293A KR100691486B1 (ko) | 2004-07-13 | 2004-07-13 | 반도체메모리소자 |
TW093139818A TWI292153B (en) | 2004-07-13 | 2004-12-21 | Semiconductor memory device with stable internal power supply voltage |
US11/020,220 US7161852B2 (en) | 2004-07-13 | 2004-12-27 | Semiconductor memory device with stable internal power supply voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040054293A KR100691486B1 (ko) | 2004-07-13 | 2004-07-13 | 반도체메모리소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060005484A KR20060005484A (ko) | 2006-01-18 |
KR100691486B1 true KR100691486B1 (ko) | 2007-03-09 |
Family
ID=35731984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040054293A KR100691486B1 (ko) | 2004-07-13 | 2004-07-13 | 반도체메모리소자 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7161852B2 (ko) |
KR (1) | KR100691486B1 (ko) |
TW (1) | TWI292153B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100792370B1 (ko) * | 2006-06-29 | 2008-01-09 | 주식회사 하이닉스반도체 | 내부전압 발생 장치 |
JP5032137B2 (ja) | 2007-01-24 | 2012-09-26 | 株式会社東芝 | 半導体記憶装置 |
KR101435164B1 (ko) * | 2008-05-14 | 2014-09-02 | 삼성전자주식회사 | 고전압 발생회로 및 이를 포함하는 플래시 메모리 장치 |
AR091731A1 (es) | 2012-07-19 | 2015-02-25 | Merck Sharp & Dohme | Antagonistas del receptor de mineralocorticoides |
JP6482690B1 (ja) * | 2018-01-11 | 2019-03-13 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0765576A (ja) * | 1993-08-20 | 1995-03-10 | Hitachi Ltd | 半導体集積回路装置 |
KR20020031838A (ko) * | 2000-10-24 | 2002-05-03 | 박종섭 | 반도체 장치의 전압 발생 조절 회로 |
KR20020090459A (ko) * | 2001-05-25 | 2002-12-05 | 주식회사 하이닉스반도체 | 고전압 발생회로 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960005387Y1 (ko) * | 1992-09-24 | 1996-06-28 | 문정환 | 반도체 메모리의 번 인 테스트(Burn-In Test) 장치 |
JP2001014892A (ja) * | 1999-06-25 | 2001-01-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2002269065A (ja) * | 2001-03-08 | 2002-09-20 | Mitsubishi Electric Corp | プログラム可能な不揮発性メモリを内蔵したマイクロコンピュータ |
JP2003242798A (ja) * | 2002-02-13 | 2003-08-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100415092B1 (ko) * | 2002-05-13 | 2004-01-13 | 주식회사 하이닉스반도체 | 모드 레지스터를 갖는 반도체 메모리 장치 및 상기 반도체메모리 장치에서의 디프 파워 다운 모드의 제어 방법 |
KR100452322B1 (ko) * | 2002-06-26 | 2004-10-12 | 삼성전자주식회사 | 반도체 메모리 장치의 전원전압 공급 방법 및 셀 어레이전원전압 공급회로 |
KR100452323B1 (ko) * | 2002-07-02 | 2004-10-12 | 삼성전자주식회사 | 반도체 메모리 장치의 기준전압 선택회로 및 그 방법 |
-
2004
- 2004-07-13 KR KR1020040054293A patent/KR100691486B1/ko active IP Right Grant
- 2004-12-21 TW TW093139818A patent/TWI292153B/zh not_active IP Right Cessation
- 2004-12-27 US US11/020,220 patent/US7161852B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0765576A (ja) * | 1993-08-20 | 1995-03-10 | Hitachi Ltd | 半導体集積回路装置 |
KR20020031838A (ko) * | 2000-10-24 | 2002-05-03 | 박종섭 | 반도체 장치의 전압 발생 조절 회로 |
KR20020090459A (ko) * | 2001-05-25 | 2002-12-05 | 주식회사 하이닉스반도체 | 고전압 발생회로 |
Also Published As
Publication number | Publication date |
---|---|
TW200603161A (en) | 2006-01-16 |
KR20060005484A (ko) | 2006-01-18 |
US7161852B2 (en) | 2007-01-09 |
US20060023522A1 (en) | 2006-02-02 |
TWI292153B (en) | 2008-01-01 |
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