KR100681779B1 - 촬상 장치 및 그 제조 방법 - Google Patents
촬상 장치 및 그 제조 방법 Download PDFInfo
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- KR100681779B1 KR100681779B1 KR1020040086171A KR20040086171A KR100681779B1 KR 100681779 B1 KR100681779 B1 KR 100681779B1 KR 1020040086171 A KR1020040086171 A KR 1020040086171A KR 20040086171 A KR20040086171 A KR 20040086171A KR 100681779 B1 KR100681779 B1 KR 100681779B1
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Abstract
Description
Claims (10)
- 수광면(受光面)을 갖는 촬상 소자와,상기 촬상 소자의 상기 수광면 측에 배열 설치된 제1 판상(板狀) 투명 부재와,상기 촬상 소자 및 상기 제1 판상 투명 부재를 밀봉하는 투명 수지와,상기 제1 판상 투명 부재에 대향하는 위치의 상기 투명 수지 위에 배열 설치된 제2 판상 투명 부재를 구비하는 것을 특징으로 하는 촬상 장치.
- 제 1 항에 있어서,상기 제2 판상 투명 부재의 면적은 상기 제1 판상 투명 부재의 면적보다도 큰 것을 특징으로 하는 촬상 장치.
- 제 1 항에 있어서,상기 제1 판상 투명 부재와 상기 촬상 소자 사이에는 공기층이 있는 것을 특징으로 하는 촬상 장치.
- 제 1 항에 있어서,상기 제1 판상 투명 부재와 상기 촬상 소자 사이에는 광투과 접착재(材)가 배열 설치되어 있는 것을 특징으로 하는 촬상 장치.
- 제 1 항에 있어서,상기 제1 판상 투명 부재는 상기 촬상 소자의 수광면에 형성된 렌즈 부재에 직접 접촉하여 배열 설치되어 있는 것을 특징으로 하는 촬상 장치.
- 제 1 항에 있어서,상기 제2 판상 투명 부재는 상기 제1 판상 투명 부재와 접촉하고 있는 것을 특징으로 하는 촬상 장치.
- 수광면을 갖는 촬상 소자와,상기 촬상 소자의 상기 수광면 측에 배열 설치된 판상 투명 부재와,상기 촬상 소자 및 상기 판상 투명 부재를 밀봉하는 투명 수지를 구비하는 촬상 장치에 있어서,상기 판상 투명 부재는 상기 촬상 소자의 수광면에 형성된 렌즈 부재에 직접 접촉하여 배열 설치되어 있는 것을 특징으로 하는 촬상 장치.
- 제 7 항에 있어서,상기 판상 투명 부재를 상기 촬상 소자에 접착제(劑)를 사용하여 고정함과 동시에, 상기 판상 투명 부재 또는 상기 촬상 소자의 상기 접착제가 배열 설치되는 접착제 배열 설치 위치의 적어도 한 쪽에 홈을 형성한 것을 특징으로 하는 촬상 장 치.
- 제 7 항에 있어서,상기 판상 투명 부재를 상기 촬상 소자에 접착제를 사용하여 고정함과 동시에, 상기 판상 투명 부재 또는 상기 촬상 소자의 상기 접착제가 배열 설치되는 접착제 배열 설치 위치에 소수성(疎水性)의 부재를 배열 설치한 것을 특징으로 하는 촬상 장치.
- 지지 기판 위에 촬상 소자를 탑재하는 공정과,상기 촬상 소자 위에 제1 판상 투명 부재를 배열 설치하는 공정과,상기 촬상 소자와 상기 지지 기판에 배열 설치된 전극을 접속하는 공정과,금형 내에 제2 판상 투명 부재를 장착함과 동시에, 상기 촬상 소자 및 상기 제1 판상 투명 부재가 배열 설치된 지지 기판을 상기 제1 판상 투명 부재와 상기 제2 판상 투명 부재가 대향하도록 상기 금형 내에 배치하는 공정과,상기 촬상 소자 및 상기 제1 판상 투명 부재의 주위를 수지 밀봉하는 공정을 구비하여 이루어지는 것을 특징으로 하는 촬상 장치의 제조 방법.
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Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007007227A (ja) * | 2005-07-01 | 2007-01-18 | Pentax Corp | 電子内視鏡用撮像装置 |
JP4686400B2 (ja) * | 2005-07-21 | 2011-05-25 | パナソニック株式会社 | 光学デバイス、光学デバイス装置、カメラモジュールおよび光学デバイスの製造方法 |
JP4762627B2 (ja) * | 2005-07-25 | 2011-08-31 | オリンパス株式会社 | 撮像装置および撮像装置の製造方法 |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
JP2007242692A (ja) * | 2006-03-06 | 2007-09-20 | Matsushita Electric Ind Co Ltd | 光学装置および光学装置の製造方法 |
US20070236591A1 (en) * | 2006-04-11 | 2007-10-11 | Tam Samuel W | Method for mounting protective covers over image capture devices and devices manufactured thereby |
JP4970845B2 (ja) * | 2006-05-16 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
TWI362550B (en) * | 2007-06-21 | 2012-04-21 | Ether Precision Inc | The method for manufacturing the image captures unit |
US20080067330A1 (en) * | 2006-09-19 | 2008-03-20 | Denso Corporation | Color sensor for vehicle and method for manufacturing the same |
US8013289B2 (en) | 2006-11-15 | 2011-09-06 | Ether Precision, Inc. | Lens array block for image capturing unit and methods of fabrication |
FR2910715B1 (fr) * | 2006-12-21 | 2009-06-26 | St Microelectronics Sa | Procede et appareillage pour realiser des micro-lentilles optiques sur un dispositif semi-conducteur |
US7593636B2 (en) * | 2007-02-01 | 2009-09-22 | Tessera, Inc. | Pin referenced image sensor to reduce tilt in a camera module |
US8013350B2 (en) | 2007-02-05 | 2011-09-06 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
JP2008219854A (ja) * | 2007-02-05 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 光学デバイス,光学デバイスウエハおよびそれらの製造方法、ならびに光学デバイスを搭載したカメラモジュールおよび内視鏡モジュール |
JP2008235686A (ja) * | 2007-03-22 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 光学デバイス、カメラモジュール、携帯電話、デジタルスチルカメラ、および医療用内視鏡スコープ |
KR100866619B1 (ko) * | 2007-09-28 | 2008-11-03 | 삼성전기주식회사 | 웨이퍼 레벨의 이미지센서 모듈 및 그 제조방법, 그리고카메라 모듈 |
JP2009130220A (ja) * | 2007-11-26 | 2009-06-11 | Sharp Corp | 固体撮像装置およびその製造方法 |
JP2009184067A (ja) * | 2008-02-06 | 2009-08-20 | Mitsubishi Electric Corp | 中空構造を有する装置およびその製造方法 |
JP2009239258A (ja) * | 2008-03-05 | 2009-10-15 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP5222036B2 (ja) * | 2008-06-17 | 2013-06-26 | 日東電工株式会社 | 光学部品の製法 |
US7813043B2 (en) * | 2008-08-15 | 2010-10-12 | Ether Precision, Inc. | Lens assembly and method of manufacture |
US8854526B2 (en) * | 2008-10-02 | 2014-10-07 | Visera Technologies Company Limited | Image sensor device with opaque coating |
JP5329903B2 (ja) * | 2008-10-15 | 2013-10-30 | オリンパス株式会社 | 固体撮像装置、固体撮像装置の製造方法 |
JP2010135442A (ja) * | 2008-12-02 | 2010-06-17 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP5197436B2 (ja) * | 2009-02-26 | 2013-05-15 | 株式会社東芝 | センサーチップ及びその製造方法。 |
KR100997797B1 (ko) * | 2009-04-10 | 2010-12-02 | 주식회사 하이닉스반도체 | 이미지 센서 모듈 |
US8090250B2 (en) * | 2009-06-23 | 2012-01-03 | Ether Precision, Inc. | Imaging device with focus offset compensation |
TW201103128A (en) * | 2009-07-03 | 2011-01-16 | Creative Sensor Inc | Image sensor and the method for package of the same |
JP2011054794A (ja) * | 2009-09-02 | 2011-03-17 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP2011146486A (ja) * | 2010-01-13 | 2011-07-28 | Panasonic Corp | 光学デバイスおよびその製造方法ならびに電子機器 |
JP5658466B2 (ja) * | 2010-02-05 | 2015-01-28 | キヤノン株式会社 | 固体撮像装置の製造方法 |
DE102010011179B4 (de) * | 2010-03-12 | 2016-08-04 | Pacific Speed Ltd. | Lichtelektrische Umwandlungsvorrichtung |
CN102201473A (zh) * | 2010-03-22 | 2011-09-28 | 宏远有限公司 | 光电转换装置 |
JP5601081B2 (ja) * | 2010-08-11 | 2014-10-08 | 株式会社ニコン | 撮像素子ユニットおよび撮像装置 |
US20130083229A1 (en) * | 2011-09-30 | 2013-04-04 | Omnivision Technologies, Inc. | Emi shield for camera module |
JP2013109011A (ja) * | 2011-11-17 | 2013-06-06 | Toshiba Corp | カメラモジュール |
JP2014033126A (ja) * | 2012-08-06 | 2014-02-20 | Ricoh Co Ltd | イメージセンサ用光学フィルタおよび該イメージセンサ用光学フィルタを備えたイメージセンサ |
JP5996328B2 (ja) * | 2012-08-16 | 2016-09-21 | アオイ電子株式会社 | 半導体デバイス |
JP6007694B2 (ja) * | 2012-09-14 | 2016-10-12 | ソニー株式会社 | 固体撮像装置及び電子機器 |
CN105122453B (zh) * | 2013-04-01 | 2018-08-10 | 豪雅冠得股份有限公司 | 近红外线吸收玻璃及其制造方法 |
US20140374847A1 (en) * | 2013-06-20 | 2014-12-25 | Honeywell International Inc. | Packaging method for mems devices |
JP6299406B2 (ja) * | 2013-12-19 | 2018-03-28 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
JP2015133369A (ja) * | 2014-01-10 | 2015-07-23 | アピックヤマダ株式会社 | 光デバイス及び光デバイスの製造方法 |
JP6100195B2 (ja) * | 2014-04-09 | 2017-03-22 | 富士フイルム株式会社 | 撮像装置 |
JP2015211131A (ja) * | 2014-04-25 | 2015-11-24 | ミツミ電機株式会社 | 撮像素子ユニット、撮像装置、及びカメラ付携帯端末 |
US11310402B2 (en) * | 2015-08-25 | 2022-04-19 | Gingy Technology Inc. | Image capturing device and fingerprint image capturing device |
US9715078B2 (en) | 2015-05-14 | 2017-07-25 | Microsoft Technology Licensing, Llc | Adjustable lens mount |
JP6096350B2 (ja) * | 2015-07-07 | 2017-03-15 | 住友化学株式会社 | 偏光板の製造方法 |
CN108352388B (zh) * | 2015-11-05 | 2022-11-18 | 索尼半导体解决方案公司 | 半导体装置、半导体装置制造方法和电子设备 |
WO2017169889A1 (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | カメラモジュール、およびカメラモジュールの製造方法、撮像装置、および電子機器 |
WO2017188413A1 (ja) * | 2016-04-27 | 2017-11-02 | 旭硝子株式会社 | 情報デバイス付きガラス板 |
CN109416454A (zh) * | 2016-07-05 | 2019-03-01 | 夏普株式会社 | 光学设备 |
JP6818468B2 (ja) * | 2016-08-25 | 2021-01-20 | キヤノン株式会社 | 光電変換装置及びカメラ |
DE112016007369B4 (de) * | 2016-10-24 | 2022-09-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
US9989713B1 (en) * | 2017-03-07 | 2018-06-05 | International Business Machines Corporation | Fluid control structure |
CN110337804A (zh) * | 2017-04-12 | 2019-10-15 | 宁波舜宇光电信息有限公司 | 摄像模组及其模塑感光组件和制造方法以及电子设备 |
WO2019003580A1 (ja) * | 2017-06-30 | 2019-01-03 | シャープ株式会社 | カメラモジュール及びカメラモジュールの製造方法 |
WO2020246293A1 (ja) * | 2019-06-06 | 2020-12-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP7447421B2 (ja) | 2019-10-04 | 2024-03-12 | 岩崎電気株式会社 | 照明器具 |
KR20210158012A (ko) * | 2020-06-23 | 2021-12-30 | 삼성전자주식회사 | 시모스 이미지 센서 패키지 |
WO2022042441A1 (zh) * | 2020-08-27 | 2022-03-03 | 青岛海信激光显示股份有限公司 | 激光器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321826A (ja) * | 1997-05-15 | 1998-12-04 | Matsushita Electron Corp | 光学的ローパスフィルタ内蔵固体撮像装置及びその製造方法 |
KR20010040113A (ko) * | 1999-10-19 | 2001-05-15 | 다카노 야스아키 | 고체 촬상 소자의 패키지 구조 |
KR20020066010A (ko) * | 2001-02-08 | 2002-08-14 | (주)해빛정보 | 유리덮개 일체형 고체 영상소자 및 그 제조방법 |
JP2002261260A (ja) * | 2001-02-28 | 2002-09-13 | Nikon Corp | 固体撮像装置 |
KR20030028516A (ko) * | 2003-02-27 | 2003-04-08 | 김영선 | 진보된 이미지 센서 칩과 이를 사용한 패캐지 제조 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116649A (en) * | 1980-02-19 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Manufacturing of semiconductor device |
US4418284A (en) * | 1980-03-17 | 1983-11-29 | Matsushita Electric Industrial Co., Ltd. | Solid-state color-image sensor and process for fabricating the same |
JPS6267863A (ja) * | 1985-09-20 | 1987-03-27 | Toshiba Corp | 固体撮像装置 |
JPS6269674A (ja) * | 1985-09-24 | 1987-03-30 | Mitsubishi Electric Corp | 固体撮像素子およびその製造方法 |
JPS62132352A (ja) * | 1985-12-04 | 1987-06-15 | Mitsubishi Electric Corp | 光透過用窓ガラスを有する半導体装置の製造方法 |
JPH0728014B2 (ja) * | 1986-05-21 | 1995-03-29 | 株式会社東芝 | 固体撮像装置 |
JPH0423469A (ja) * | 1990-05-18 | 1992-01-27 | Toshiba Corp | 固体撮像素子モジュール |
JPH04114456A (ja) * | 1990-09-04 | 1992-04-15 | Canon Inc | 光電変換装置 |
JPH04157759A (ja) * | 1990-10-22 | 1992-05-29 | Sharp Corp | 光学半導体装置及び該装置の成型方法 |
JPH0590549A (ja) | 1991-09-27 | 1993-04-09 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
JPH04304408A (ja) * | 1991-04-01 | 1992-10-27 | Nikon Corp | 水中カメラ用レンズ |
JP3166216B2 (ja) * | 1991-07-03 | 2001-05-14 | ソニー株式会社 | オンチップレンズ付固体撮像装置およびその製造方法 |
JPH0541506A (ja) | 1991-08-06 | 1993-02-19 | Sony Corp | マイクロレンズ付固体撮像装置 |
JP2515693Y2 (ja) * | 1992-10-12 | 1996-10-30 | 株式会社三社電機製作所 | 半導体モジュール |
JP3149630B2 (ja) * | 1993-06-28 | 2001-03-26 | 松下電器産業株式会社 | 固体撮像装置及びその製造方法 |
JP2784138B2 (ja) * | 1993-12-09 | 1998-08-06 | 三菱電機株式会社 | イメージセンサ |
JPH10270672A (ja) * | 1997-03-25 | 1998-10-09 | Sony Corp | 固体撮像素子 |
US6531334B2 (en) * | 1997-07-10 | 2003-03-11 | Sony Corporation | Method for fabricating hollow package with a solid-state image device |
JP3277902B2 (ja) * | 1998-11-30 | 2002-04-22 | 日本電気株式会社 | マイクロレンズ内蔵基板及びその製造方法 |
US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
JP3880278B2 (ja) * | 2000-03-10 | 2007-02-14 | オリンパス株式会社 | 固体撮像装置及びその製造方法 |
JP3607160B2 (ja) * | 2000-04-07 | 2005-01-05 | 三菱電機株式会社 | 撮像装置 |
JP2002134762A (ja) * | 2000-10-19 | 2002-05-10 | Shinko Electric Ind Co Ltd | 光学装置及びその製造方法 |
JP3742775B2 (ja) * | 2002-02-21 | 2006-02-08 | 富士フイルムマイクロデバイス株式会社 | 固体撮像素子 |
US6744109B2 (en) * | 2002-06-26 | 2004-06-01 | Agilent Technologies, Inc. | Glass attachment over micro-lens arrays |
US7414661B2 (en) * | 2002-08-13 | 2008-08-19 | Micron Technology, Inc. | CMOS image sensor using gradient index chip scale lenses |
US7535509B2 (en) * | 2003-08-22 | 2009-05-19 | Konica Minolta Opto, Inc. | Transparent member in a solid-state image pick-up apparatus supported through use of micro-lenses larger in size than pixel micro-lenses and a method for producing the micro-lenses and transparent member |
US7115853B2 (en) * | 2003-09-23 | 2006-10-03 | Micron Technology, Inc. | Micro-lens configuration for small lens focusing in digital imaging devices |
-
2004
- 2004-06-15 JP JP2004177598A patent/JP4838501B2/ja not_active Expired - Fee Related
- 2004-10-20 US US10/968,111 patent/US8411197B2/en not_active Expired - Fee Related
- 2004-10-21 TW TW093131972A patent/TWI249849B/zh not_active IP Right Cessation
- 2004-10-27 KR KR1020040086171A patent/KR100681779B1/ko active IP Right Grant
- 2004-10-29 CN CNB2004100880243A patent/CN100354883C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321826A (ja) * | 1997-05-15 | 1998-12-04 | Matsushita Electron Corp | 光学的ローパスフィルタ内蔵固体撮像装置及びその製造方法 |
KR20010040113A (ko) * | 1999-10-19 | 2001-05-15 | 다카노 야스아키 | 고체 촬상 소자의 패키지 구조 |
KR20020066010A (ko) * | 2001-02-08 | 2002-08-14 | (주)해빛정보 | 유리덮개 일체형 고체 영상소자 및 그 제조방법 |
JP2002261260A (ja) * | 2001-02-28 | 2002-09-13 | Nikon Corp | 固体撮像装置 |
KR20030028516A (ko) * | 2003-02-27 | 2003-04-08 | 김영선 | 진보된 이미지 센서 칩과 이를 사용한 패캐지 제조 |
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TW200541063A (en) | 2005-12-16 |
CN100354883C (zh) | 2007-12-12 |
US8411197B2 (en) | 2013-04-02 |
CN1713214A (zh) | 2005-12-28 |
KR20050119073A (ko) | 2005-12-20 |
JP2006005029A (ja) | 2006-01-05 |
TWI249849B (en) | 2006-02-21 |
JP4838501B2 (ja) | 2011-12-14 |
US20050275741A1 (en) | 2005-12-15 |
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