KR100679669B1 - Method for cleaning a photo mask - Google Patents

Method for cleaning a photo mask Download PDF

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KR100679669B1
KR100679669B1 KR1020050067185A KR20050067185A KR100679669B1 KR 100679669 B1 KR100679669 B1 KR 100679669B1 KR 1020050067185 A KR1020050067185 A KR 1020050067185A KR 20050067185 A KR20050067185 A KR 20050067185A KR 100679669 B1 KR100679669 B1 KR 100679669B1
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South Korea
Prior art keywords
photomask
cleaning
heat treatment
ammonia
ions
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KR1020050067185A
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Korean (ko)
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KR20070012932A (en
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김용대
강한별
김종민
조현준
최상수
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주식회사 피케이엘
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Priority to KR1020050067185A priority Critical patent/KR100679669B1/en
Priority to PCT/KR2006/000872 priority patent/WO2006101315A1/en
Priority to JP2006074742A priority patent/JP4417339B2/en
Priority to TW095109511A priority patent/TWI326795B/en
Priority to US11/276,974 priority patent/US7186301B2/en
Publication of KR20070012932A publication Critical patent/KR20070012932A/en
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Publication of KR100679669B1 publication Critical patent/KR100679669B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Abstract

본 발명은 웨이퍼 공정에서 포토 리소그래피 공정을 지속적으로 진행함에 따라 포토마스크 표면에 성장성 결함(defect)인 헤이즈(haze)를 방지하기 위하여 포토마스크 표면의 잔류 이온(residual ion)을 제거하는 포토마스크 세정방법에 관한 것이다. 본 발명은 가열된 과산화수소 및 오존수를 이용하여 세정공정을 실시한 포토마스크를 열처리함으로써 마스크 표면에 남아있는 잔류 이온들을 제거하여 헤이즈를 방지하고 위상시프트 마스크(phase shift mask)의 광학적 특성 변화를 현저히 줄일 수 있다.The present invention provides a photomask cleaning method that removes residual ions on the surface of a photomask in order to prevent haze, which is a growth defect, on the surface of the photomask as the photolithography process is continuously performed in a wafer process. It is about. According to the present invention, by heating the photomask subjected to the cleaning process using heated hydrogen peroxide and ozone water, residual ions remaining on the mask surface are removed to prevent haze and to significantly reduce the optical characteristic change of the phase shift mask. have.

포토리소그래피, 세정, 헤이즈, 열처리 Photolithography, Cleaning, Haze, Heat Treatment

Description

포토마스크 세정방법{Method for cleaning a photo mask}Method for cleaning a photo mask

도 1은 본 발명의 포토마스크 세정공정 순서도1 is a flow chart of the photomask cleaning process of the present invention

본 발명은 세정방법에 관한 것으로, 더욱 상세하게는 포토 리소그래피 공정을 지속적으로 진행함에 따라 포토마스크 표면에 성장성 결함(defect)인 헤이즈(haze)를 방지하기 위한 포토마스크 세정방법에 관한 것이다.The present invention relates to a cleaning method, and more particularly, to a photomask cleaning method for preventing haze (growth defects) on the surface of the photomask as the photolithography process continues.

반도체공정은 소자의 집적도가 높아짐에 따라 패턴의 해상도를 향상시키기 위해 노광원의 파장이 더욱더 짧아지는 추세이다. 그로 인해 기존의 파장대에서 발생하지 않았던 헤이즈라는 현상이 나타나게 되었다. 이는 기존의 I-line 이상의 파장으로 포토리소그래피를 하는 경우 노광에너지가 상대적으로 낮아서 포토마스크 표면에 남아 있는 SOx, NOx, POx, F, Cl, NH4, Ca, Mg 등의 잔류 이온(residual ion)들이 광학반응을 일으키는 현상이 발생하지 않았기 때문이다. In the semiconductor process, as the degree of integration of devices increases, the wavelength of the exposure source becomes shorter to improve the resolution of the pattern. As a result, a phenomenon called haze did not occur in the existing wavelength band. This is because when the photolithography is performed at a wavelength higher than the conventional I-line, the exposure energy is relatively low, and residual ions such as SOx, NOx, POx, F, Cl, NH 4 , Ca, and Mg remaining on the photomask surface remain. This is because they do not cause an optical reaction.

그러나 248nm 이하로 광원의 파장이 짧아짐에 따라 노광에너지가 증가하고 이로 인해 마스크 표면에 남아있는 잔류 이온들 간의 광학 반응이 헤이즈라는 성장 성 결함을 발생시킨다. However, as the wavelength of the light source becomes shorter than 248 nm, the exposure energy increases, and the optical reaction between residual ions remaining on the mask surface causes a growth defect called haze.

따라서, 이즈를 제거하기 위하여 종래에는 공정의 목적에 따라 화학 물질의 종류, 조성비 및 온도를 조절하는 습식세정 공정을 실시하였으나 잔류 이온들을 완전히 제거하는 것은 거의 불가능하여 이를 보완하기 위하여 새로운 개념의 공정개발이 시급한 과제로 대두되고 있다.Therefore, the conventional wet cleaning process to control the type, composition ratio, and temperature of chemicals according to the purpose of the process to remove the impurities, but it is almost impossible to completely remove the residual ions, a new concept of process development to compensate for this This urgent task is emerging.

상기와 같은 문제점을 해결하기 위해 안출된 본 발명은 세정공정 이후에 열처리를 실시하여 마스크 표면에 남아 있는 잔류이온을 제거하여 헤이즈를 방지하고, 위상편이 마스크(phase shift mask)의 광학적 특성 변화를 줄이는 데 그 목적이 있다.The present invention devised to solve the above problems is subjected to heat treatment after the cleaning process to remove the residual ions remaining on the mask surface to prevent haze, reducing the change in the optical characteristics of the phase shift mask (phase shift mask) Its purpose is to.

상기 목적을 달성하기 위한 본 발명의 포토마스크의 세정방법은 산계열에서 1차 세정공정을 실시하는 제1단계와; 가열된 과산화수소 및 오존수로 2차 세정공정을 실시하는 제2단계와; 1차 열처리를 실시하는 제3단계와; 염기계열에서 3차 세정공정을 실시하는 제4단계와; 가열된 과산화수소 및 오존수로 4차 세정공정을 실시하여 제5단계; 및 2차 열처리를 실시하는 제6단계;를 포함하는 것을 특징으로 한다.The cleaning method of the photomask of the present invention for achieving the above object comprises a first step of performing a primary cleaning process in the acid series; A second step of performing a second washing step with heated hydrogen peroxide and ozone water; A third step of performing primary heat treatment; A fourth step of performing a third washing process in a base sequence; A fifth step of performing a fourth washing process with heated hydrogen peroxide and ozone water; And a sixth step of performing a second heat treatment.

상기 제3단계는 산계열의 잔류이온 및 암모니아와 반응된 이온들을 활성화시키고 마스크 표면을 산화시키는 것을 특징으로 한다.The third step is characterized in that to activate the residual ions of the acid series and the ions reacted with ammonia and to oxidize the mask surface.

상기 제2단계와 제5단계는 염기계열 세정공정에서 마스크 표면으로 침투된 암모니아를 화학적 반응을 통해 외부로 석출시키고 마스크 표면에 산소를 주입하는 것을 특징으로 한다.In the second and fifth steps, ammonia penetrated to the mask surface in the base-based cleaning process is precipitated to the outside through a chemical reaction and oxygen is injected into the mask surface.

상기 제6단계는 암모니아와 반응된 이온들을 활성화시키고, 염기계열의 잔류이온인 암모니아(NH4)를 증발시키며, 마스크 표면을 산화시키는 것을 특징으로 한다.The sixth step is characterized by activating ions reacted with ammonia, evaporating ammonia (NH 4 ), which is a basic residual ion, and oxidizing a mask surface.

상기 제1단계, 제2단계, 제3단계, 제4단계, 제5단계, 제6단계 이후에, 초순수에서 린싱(Rinsing) 공정을 실시하는 것이 바람직하다.After the first, second, third, fourth, fifth, and sixth steps, it is preferable to perform a rinsing process in ultrapure water.

상기 산계열에서 1차 세정공정은 황산, 질산, 또는 인산과 과산화수소를 혼합한 수용액과 오존수로 실시하고, 상기 염기계열에서 3차 세정공정은 암모니아수와 과산화수소를 혼합한 수용액(SC-1)과 수소수로 실시하는 것이 바람직하다.In the acid series, the first washing step is performed with an aqueous solution of ozone water and sulfuric acid, nitric acid or phosphoric acid and hydrogen peroxide, and the third washing step in the base series is an aqueous solution (SC-1) and water mixed with ammonia water and hydrogen peroxide. It is preferable to carry out in a small number.

상기 2차 및 4차 세정공정은 40~100℃에서 실시하는 것이 바람직하다.It is preferable to perform the said 2nd and 4th washing | cleaning process at 40-100 degreeC.

상기 열처리는 전기로 방식의 가열로 또는 대류 오븐(oven)에서 실시하는 것이 바람직하고, N2, Ar, O2, He 가스 중 어느 하나 또는 둘 이상 혼합된 가스 분위기에서 50~1000℃ 온도와 5분~5시간 범위에서 실시하는 것이 바람직하며, 열처리 온도는 50~400℃ 범위에서 실시하는 것이 더욱 바람직하다.The heat treatment is preferably carried out in an electric furnace or a convection oven (oven), the temperature of 50 ~ 1000 ℃ 5 and any one or two or more of N 2 , Ar, O 2 , He gas mixed 5 It is preferable to carry out in the range of minutes-5 hours, and it is more preferable to perform heat processing temperature in 50-400 degreeC range.

이하 첨부한 도면을 참조로 하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 포토마스크 세정공정 순서도를 나타낸 것이다. Figure 1 shows a flow chart of the photomask cleaning process of the present invention.

도 1을 참조하면, 먼저 포토마스크에 형성된 폴리머(polymer)를 제거하기 위하여 산계열의 황산(H2SO4), 질산(HNO3) 또는 인산(H3PO4)과 과산화수소를 혼합한 수 용액과 오존수를 이용하여 1차 세정공정(100)을 실시하고, 50℃ 이상에서 초순수를 사용하여 1차 린싱(rising) 공정(101)을 실시한다. Referring to FIG. 1, first, an aqueous solution of an acid-based sulfuric acid (H 2 SO 4 ), nitric acid (HNO 3 ), or phosphoric acid (H 3 PO 4 ) and hydrogen peroxide are mixed to remove a polymer formed in a photomask. The primary washing step 100 is performed using the excess ozone water, and the primary rinsing step 101 is performed using ultrapure water at 50 ° C or higher.

이어서, 40~100℃에서 가열된 과산화수소 및 오존수를 이용하여 2차 세정공정(102)을 실시하여 마스크 표면 및 내부에 있는 암모니아와 반응을 통해 외부로 석출시키고 마스크 표면에 산소가 주입된다. 이어서, 50℃ 이상에서 초순수를 사용하여 2차 린싱 공정(103)을 실시한다. Subsequently, the secondary cleaning step 102 is performed using hydrogen peroxide and ozone water heated at 40 to 100 ° C. to precipitate outward through reaction with ammonia in the mask surface and the inside, and oxygen is injected into the mask surface. Next, the secondary rinse step 103 is performed using ultrapure water at 50 ° C or higher.

이어서, 전기로 방식의 가열로에서 50~1000℃ 온도와, N2, O2, Ar, He 중 어느 하나 또는 둘 이상 혼합된 가스 분위기에서 5분~5시간 범위에서 1차 열처리(104)를 수행하여 2차 세정공정(102)에서 암모니아와 반응된 이온 및 산계열의 SOx, NOx, POx 등의 잔류 이온을 활성화시키고 마스크 표면을 산화시켜 3차 염기계열의 세정시 암모니아가 마스크 표면으로 침투하는 것을 막는다.Subsequently, the primary heat treatment 104 is performed at a temperature of 50 to 1000 ° C. and at least one of N 2 , O 2 , Ar, and He in a gas atmosphere mixed with an electric furnace. By activating the ions reacted with ammonia in the secondary cleaning step 102 and residual ions such as SOx, NOx, POx of the acid series and oxidizing the mask surface to ammonia penetrates to the mask surface during the third base cleaning To prevent

이어서, 1차 열처리(104)를 통해 활성화된 잔류 이온들을 50℃ 이상에서 초순수를 이용한 3차 린싱 공정(105)을 통해 제거한다.Subsequently, residual ions activated through the first heat treatment 104 are removed through a third rinse process 105 using ultrapure water at 50 ° C. or higher.

이어서, 염기계열인 암모니아수와 과산화수소를 혼합한 수용액(SC-1)과 수소수를 이용하여 3차 세정공정(106)을 실시하고, 50℃ 이상에서 초순수를 이용한 4차 린싱 공정(107)을 실시한다.Next, the 3rd washing | cleaning process 106 is performed using the aqueous solution (SC-1) which mixed base ammonia water and hydrogen peroxide, and hydrogen water, and the 4th rinsing process 107 using ultrapure water is performed at 50 degreeC or more. do.

이어서, 40~100℃에서 가열된 과산화수소 및 오존수를 이용하여 4차 세정공정(108)을 실시하여 3차 염기계열의 3차 세정공정(106)시 마스크 표면 및 내부로 침투한 암모니아를 반응시켜 외부로 석출시키고 마스크표면에 산소가 주입된다. 이 어서, 50℃ 이상에서 초순수를 사용하여 5차 린싱 공정(109)을 실시한다.Subsequently, the fourth cleaning step 108 is performed using hydrogen peroxide and ozone water heated at 40 to 100 ° C. to react the ammonia infiltrated into the mask surface and the inside during the third base cleaning step 106. It is precipitated and oxygen is injected into the mask surface. Subsequently, the fifth rinsing step 109 is performed using ultrapure water at 50 ° C or higher.

이어서, 전기로 방식의 가열로에서 50~1000℃ 온도와, N2, Ar, O2, He가스 중 어느 하나 또는 둘 이상 혼합된 가스 분위기에서 5분~5시간 범위에서 2차 열처리(110)를 실시하여 포토마스크 표면에 남아 있는 4차 세정공정(108)에서 암모니아와 반응된 이온들을 활성화시키고 염기계열의 잔류 이온인 암모니아(NH4)를 증발시키며 마스크 표면을 산화시킨다. 1차 및 2차 열처리는 대류 오븐(oven)에서도 실시 가능하고, 열처리 온도는 50~400℃가 바람직하다.Subsequently, the secondary heat treatment 110 in a range of 5 minutes to 5 hours in a gas atmosphere in which a temperature of 50 to 1000 ° C. and N 2 , Ar, O 2 , and He or more are mixed in an electric furnace type heating furnace. In order to activate the ions reacted with ammonia in the fourth cleaning process 108 remaining on the surface of the photomask, evaporate ammonia (NH 4 ), which is a residual base ions, and oxidize the mask surface. Primary and secondary heat treatments can be carried out in a convection oven, and the heat treatment temperature is preferably 50 to 400 ° C.

마지막으로, 50℃ 이상에서 초순수를 이용한 6차 린싱 공정(111)을 실시한다. Finally, the 6th rinsing process 111 using ultrapure water is performed at 50 degreeC or more.

본 발명은 포토마스크의 사용 목적에 따라 산소(O2) 가스를 사용하여 열처리할 경우 열처리 초기에는 포토마스크 표면에 존재하는 암모니아(NH4) 이온들이 열에 의해 해리되면서 포토마스크에서 탈착되고 열처리가 진행되는 동안 Cr과 MoSiON층의 상변화 및 산화반응으로 포토마스크 내부에 잔존하는 암모니아(NH4) 이온들이 웨이퍼의 노광공정 동안에 외부로 확산되는 것을 방지하며 잔류 이온들을 활성화시킨다. 또한 MoSiON층의 상변화 및 산화반응으로 인해 염기계열의 세정공정을 실시하는 동안 SC-1내에 포함된 암모니아(NH4) 이온들이 Cr과 차광막(MoSiON) 내부로 확산하는 것을 방지한다. According to the present invention, when annealing using oxygen (O 2 ) gas according to the purpose of use of the photomask, the ammonia (NH 4 ) ions present on the surface of the photomask are dissociated by heat and desorbed from the photomask. Phase change and oxidation of Cr and MoSiON layers prevents ammonia (NH 4 ) ions remaining inside the photomask from diffusing to the outside during the exposure process of the wafer and activates the remaining ions. In addition, ammonia (NH 4 ) ions contained in SC-1 are prevented from diffusing into Cr and the light shielding film (MoSiON) during the base-based cleaning process due to the phase change and oxidation reaction of the MoSiON layer.

N2 가스를 사용하여 열처리할 경우 MoSi과 질화(MoSiN) 반응으로 MoSiON막의 광학적 특성인 위상과 투과율의 변화를 조절시키며 산계열의 잔류 이온들을 활성화시키고 암모니아 이온을 증발시킨다. 또한 Ar, He 가스를 사용할 경우에는 MoSiON과의 산화 및 질화반응 없이 마스크 표면의 잔류 이온들을 활성화시키고 암모니아 이온을 증발시킨다. In case of heat treatment using N 2 gas, MoSi and NiSi (MoSiN) reaction controls the phase and transmittance, which are optical properties of MoSiON film, activates residual ions in acid series and evaporates ammonia ions. In addition, when Ar and He gases are used, residual ions on the surface of the mask are activated without oxidation and nitriding with MoSiON, and ammonia ions are evaporated.

이상 상술한 바와 같이, 본 발명은 열처리를 통하여 포토마스크 표면에 잔존하는 이온들의 제거율을 높이며, Cr과 MoSiON층의 경화 및 산화를 유도하여 이온들의 확산을 방지하고 세정공정에 의한 Cr과 MoSiON층의 식각을 억제하여 Cr과 MoSiON의 광학적 특성인 위상과 투과율의 변화를 현저히 줄일 수 있는 장점이 있다.As described above, the present invention increases the removal rate of ions remaining on the surface of the photomask through heat treatment, induces hardening and oxidation of Cr and MoSiON layers, prevents diffusion of ions and cleans the Cr and MoSiON layers by the cleaning process. By suppressing the etching, it is possible to significantly reduce the phase and transmittance change, which are optical properties of Cr and MoSiON.

Claims (13)

포토마스크의 세정방법에 있어서,In the cleaning method of the photomask, 포토마스크에 형성된 폴리머(polymer)를 제거하기 위하여 산계열의 산계열에서 1차 세정공정을 실시하는 제1단계와; A first step of performing a first cleaning process in an acid series of an acid series to remove a polymer formed in the photomask; 가열된 과산화수소 및 오존수로 2차 세정공정을 실시하는 제2단계와; A second step of performing a second washing step with heated hydrogen peroxide and ozone water; 1차 열처리를 실시하는 제3단계와; A third step of performing primary heat treatment; 염기계열에서 3차 세정공정을 실시하는 제4단계와; A fourth step of performing a third washing process in a base sequence; 가열된 과산화수소 및 오존수로 4차 세정공정을 실시하여 제5단계; 및A fifth step of performing a fourth washing process with heated hydrogen peroxide and ozone water; And 2차 열처리를 실시하는 제6단계;를 포함하는 것을 특징으로 하는 포토마스크의 세정방법.And a sixth step of performing a second heat treatment. 제1항에 있어서,The method of claim 1, 상기 제3단계는 산계열의 잔류이온 및 암모니아와 반응된 이온들을 활성화시키고 마스크 표면을 산화시키는 것을 특징으로 하는 포토마스크의 세정방법.The third step is a method of cleaning a photomask, characterized in that to activate the residual ions of the acid series and ions reacted with ammonia and to oxidize the mask surface. 제1항에 있어서,The method of claim 1, 상기 제2단계와 제5단계는 염기계열 세정공정에서 마스크 표면으로 침투된 암모니아를 화학적 반응을 통해 외부로 석출시키고, 마스크 표면에 산소가 주입되는 것을 특징으로 하는 포토마스크의 세정방법.The second and fifth steps of the photomask cleaning method characterized in that the ammonia penetrated to the surface of the mask in the base-based cleaning process to the outside through a chemical reaction, oxygen is injected into the mask surface. 제1항에 있어서,The method of claim 1, 상기 제6단계는 암모니아와 반응된 이온들을 활성화시키고, 염기계열의 잔류이온을 증발시키며, 마스크 표면을 산화시키는 것을 특징으로 하는 포토마스크의 세정방법.The sixth step is a method of cleaning a photomask, characterized in that to activate the ions reacted with ammonia, evaporate the residual residual ions of the base series, and oxidize the mask surface. 제1항에 있어서,The method of claim 1, 상기 제1단계, 제2단계, 제3단계, 제4단계, 제5단계, 제6단계 이후에, 초순수에서 린싱 공정을 더 포함하여 실시하는 것을 특징으로 하는 포토마스크 세정방법.After the first step, the second step, the third step, the fourth step, the fifth step, the sixth step, the photomask cleaning method characterized in that it further comprises a rinse step in ultrapure water. 제1항에 있어서,The method of claim 1, 상기 산계열에서 1차 세정공정은 황산, 질산, 또는 인산과 과산화수소를 혼합한 수용액과 오존수로 실시하는 것을 특징으로 하는 포토마스크 세정방법.The primary cleaning process in the acid series is a photomask cleaning method, characterized in that performed with an aqueous solution of ozone water and sulfuric acid, nitric acid, or a mixture of phosphoric acid and hydrogen peroxide. 제1항에 있어서,The method of claim 1, 상기 2차 및 4차 세정공정은 40~100℃에서 실시하는 것을 특징으로 하는 포토마스크 세정방법.The second and fourth cleaning process is a photomask cleaning method, characterized in that carried out at 40 ~ 100 ℃. 제1항에 있어서,The method of claim 1, 상기 열처리는 N2, Ar, O2, He 가스 중 어느 하나 또는 둘 이상 혼합된 가스 분위기에서 실시하는 것을 특징으로 하는 포토마스크 세정방법.The heat treatment is a photomask cleaning method, characterized in that carried out in a gas atmosphere mixed with one or two or more of N 2 , Ar, O 2 , He gas. 제1항에 있어서,The method of claim 1, 상기 염기계열에서 3차 세정공정은 암모니아수와 과산화수소를 혼합한 수용액(SC-1)과 수소수로 실시하는 것을 특징으로 하는 포토마스크 세정방법. The third cleaning step in the base series is a photomask cleaning method characterized in that the aqueous solution (SC-1) and hydrogen water mixed with ammonia water and hydrogen peroxide. 제1항에 있어서,The method of claim 1, 상기 열처리는 전기로 방식의 가열로 또는 대류 오븐(oven)에서 실시하는 것을 특징으로 하는 포토마스크 세정방법. The heat treatment is a photomask cleaning method, characterized in that carried out in an electric furnace or a convection oven (oven). 제1항에 있어서,The method of claim 1, 상기 열처리는 전기로 방식의 가열로에서 50~1000℃ 온도와 5분~5시간 범위에서 실시하는 것을 특징으로 하는 포토마스크 세정방법.The heat treatment is a photomask cleaning method, characterized in that carried out at 50 ~ 1000 ℃ temperature and 5 minutes to 5 hours in an electric furnace type heating furnace. 제1항에 있어서,The method of claim 1, 상기 열처리는 대류 오븐(oven)에서 50~400℃에서 실시하는 것을 특징으로 하는 포토마스크 세정방법.The heat treatment is a photomask cleaning method, characterized in that carried out at 50 ~ 400 ℃ in a convection oven (oven). 제4항에 있어서,The method of claim 4, wherein 상기 염기계열의 잔류이온은 암모니아(NH4)인 것을 특징으로 하는 포토마스크 세정방법.The residual ion of the base series is a photomask cleaning method, characterized in that ammonia (NH 4 ).
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KR20220142023A (en) 2021-04-14 2022-10-21 아레텍 주식회사 Spin cleaning method of semiconductor lithography photo mask using ozone water
KR20230154493A (en) 2022-05-02 2023-11-09 아레텍 주식회사 Spin cleaning method of semiconductor lithography photo mask using ozone water

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