KR100589123B1 - 기공형성용 템플레이트로 유용한 사이클로덱스트린유도체와 이를 이용하여 제조된 저유전체 - Google Patents
기공형성용 템플레이트로 유용한 사이클로덱스트린유도체와 이를 이용하여 제조된 저유전체 Download PDFInfo
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- KR100589123B1 KR100589123B1 KR1020040010827A KR20040010827A KR100589123B1 KR 100589123 B1 KR100589123 B1 KR 100589123B1 KR 1020040010827 A KR1020040010827 A KR 1020040010827A KR 20040010827 A KR20040010827 A KR 20040010827A KR 100589123 B1 KR100589123 B1 KR 100589123B1
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- cyclodextrin
- low dielectric
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- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical class O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000003989 dielectric material Substances 0.000 title abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 42
- 229920000858 Cyclodextrin Polymers 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 22
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052909 inorganic silicate Inorganic materials 0.000 claims abstract description 12
- -1 3-trimethoxysilylpropyl Chemical group 0.000 claims description 24
- 239000002105 nanoparticle Substances 0.000 claims description 18
- 239000001116 FEMA 4028 Substances 0.000 claims description 11
- 229960004853 betadex Drugs 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 10
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 229940043377 alpha-cyclodextrin Drugs 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical group C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 229940080345 gamma-cyclodextrin Drugs 0.000 claims description 5
- FMAMSYPJXSEYSW-UHFFFAOYSA-N hepta-1,4-diene Chemical compound CCC=CCC=C FMAMSYPJXSEYSW-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 229940097362 cyclodextrins Drugs 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 26
- 239000011148 porous material Substances 0.000 description 21
- 239000010409 thin film Substances 0.000 description 21
- 239000000126 substance Substances 0.000 description 17
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- 239000011368 organic material Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WHNPOQXWAMXPTA-UHFFFAOYSA-N 3-methylbut-2-enamide Chemical compound CC(C)=CC(N)=O WHNPOQXWAMXPTA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- BHELZAPQIKSEDF-UHFFFAOYSA-N allyl bromide Chemical compound BrCC=C BHELZAPQIKSEDF-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
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- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
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- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical group CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
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- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920000428 triblock copolymer Polymers 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
구 분 | 매트릭스 | 템플레이트 (부피%) | 굴절률 (R.I.) | 공극률(%) | 유전상수(k) | ||
기대치 | 측정치 | ||||||
실시예 1 | MSSQ | TESCD | 0 | 1.380 | 0.0 | 2.70 | 2.70 |
24 | 1.360 | 5.1 | 2.57 | 2.52 | |||
35 | 1.317 | 14.4 | 2.31 | 2.26 | |||
40 | 1.288 | 21.0 | 2.15 | 2.10 | |||
42 | 1.226 | 36.3 | 1.84 | 1.81 | |||
44 | 1.213 | 39.5 | 1.78 | 1.74 | |||
47 | 1.195 | 44.2 | 1.70 | 1.65 | |||
50 | 1.168 | 51.3 | 1.59 | 1.54 | |||
MSSQ 공중합체 | TESCD | 0 | 1.395 | 0.0 | 2.86 | 2.86 | |
12 | 1.380 | 3.7 | 2.75 | ||||
24 | 1.354 | 8.9 | 2.58 | ||||
35 | 1.334 | 13.2 | 2.45 | ||||
47 | 1.238 | 35.4 | 1.92 | ||||
비교예 1 | MSSQ | TABCD | 0 | 1.370 | 0.0 | 2.70 | 2.7 |
10 | 1.337 | 10.1 | 2.41 | 2.43 | |||
20 | 1.290 | 20.2 | 2.16 | 2.19 | |||
30 | 1.259 | 28.3 | 1.98 | 1.95 | |||
40 | 1.205 | 41.3 | 1.73 | 1.71 | |||
MSSQ 공중합체 | TABCD | 0 | 1.402 | 0 | 2.87 | 2.87 | |
10 | 1.362 | 9.1 | 2.60 | 2.62 | |||
20 | 1.310 | 20.7 | 2.29 | 2.31 | |||
30 | 1.284 | 26.3 | 2.14 | 2.17 | |||
40 | 1.230 | 39.2 | 1.87 | 1.89 | |||
50 | 1.180 | 50.2 | 1.64 | 1.66 | |||
60 | 1.150 | 59.2 | 1.52 | 1.55 | |||
비교예 2 | CSSQ | tCD | 0 | 1.433 | 0.0 | 2.51 | |
10 | 1.398 | 9.4 | 2.38 | ||||
20 | 1.367 | 16.0 | |||||
30 | 1.353 | 23.0 | 1.98 | ||||
50 | 1.315 | 29.7 | 1.90 |
구분 | 매트릭스 | HCl/TESCD의 몰비 | H20/TESCD의 몰비 | 굴절률 (R.I.) |
실시예 2 | TESCD | 0 | 0 | 1.423 |
TESCD | 0.02 | 44 | 1.412 | |
TESCD | 0.18 | 44 | 1.359 | |
TESCD | 0.71 | 44 | 1.323 |
Claims (10)
- 제 1 항에 있어서, 상기 유도체가 헥사키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-α-사이클로덱스트린}, 헥사키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-α-사이클로덱스트린}, 헵타키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-β-사이클로덱스트린}, 헵타키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-β-사이클로덱스트린}, 옥타키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-γ-사이클로덱스트린}, 및 옥타키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-γ-사이클로덱스트린} 중에서 선택된 것임을 특징으로 하는 기공형성용 템플레이트.
- 제 4 항에 있어서, 상기 저유전 매트릭스는 폴리메틸실세스퀴옥산 및 폴리메틸실세스퀴옥산 공중합체 중에서 선택된 실리케이트 전구체가 포함된 것임을 특징으로 하는 저유전막.
- 제 6 항에 있어서,a) 유기 또는 무기 실리케이트 전구체와,b) 상기 화학식 1로 표시되는 사이클로덱스트린 유도체의 나노입자가각각 10 ∼ 40 중량% 농도 범위에서 동일 농도로 용해되어 있는 두 용액을 10 ∼ 50 : 10 ∼ 50 부피%로 혼합하여 얻어진 것임을 특징으로 하는 초저유전 절연성 조성물.
- 제 6 항에 있어서, 상기 화학식 1로 표시되는 유도체가 헥사키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-α-사이클로덱스트린}, 헥사키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-α-사이클로덱스트린}, 헵타키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-β-사이클로덱스트린}, 헵타키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-β-사이클로덱스트린}, 옥타키스{2,3,6-트리-O-(3-트리메톡시실릴프로필)-γ-사이클로덱스트린}, 옥타키스{2,3,6-트리-O-(3-트리에톡시실릴프로필)-γ-사이클로덱스트린} 중에서 선택된 것을 특징으로 하는 초저유전 절연성 조성물.
- 제 6 항에 있어서, 상기 유기 또는 무기 실리케이트 전구체가 폴리메틸실세 스퀴옥산 또는 폴리메틸실세스퀴옥산 공중합체인 것을 특징으로 하는 초저유전 절연성 조성물.
- 상기 청구항 6 내지 청구항 9 중에서 선택된 어느 한 항의 초저유전 절연성 조성물을 박막화하여 제조한 것으로, 매트릭스 용액에 대한 템플레이트 용액의 상대 부피비가 40 ∼ 49%일 때 공극률이 21 ∼ 51% 이고 유전율이 2.1 ∼1.54 인 것임을 특징으로 하는 초저유전 절연막.
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US10/588,358 US7462659B2 (en) | 2004-02-18 | 2004-12-14 | Reactive cyclodextrin derivatives as pore-forming templates, and low dielectric materials prepared by using the same |
DE112004002747T DE112004002747B4 (de) | 2004-02-18 | 2004-12-14 | Reaktive nanopartikuläre Cyclodextrinderivate als porenbildende Matrizen, diese enthaltende dielektrische Matrix und ultragering dielektrische Zusammensetzung, sowie unter deren Verwendung hergestellte gering und ultragering dielektrische Filme |
PCT/KR2004/003287 WO2005078743A1 (en) | 2004-02-18 | 2004-12-14 | Cyclodextrin derivatives as pore-forming templates, and low dielectric materials prepared by using the same |
JP2006554015A JP4555836B2 (ja) | 2004-02-18 | 2004-12-14 | 気孔形成用テンプレートとしてのシクロデキストリン誘導体及びそれを用いて調整された低誘電体材料 |
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WO2010134684A2 (ko) * | 2009-05-20 | 2010-11-25 | 서강대학교산학협력단 | 초저유전막의 제조방법, 이에 의한 초저유전막 |
KR20160000417A (ko) | 2014-06-24 | 2016-01-04 | (주)디엔에프 | 실리콘 전구체, 이의 제조방법 및 이를 이용한 실리콘함유 유전막의 제조방법 |
KR20160051307A (ko) | 2014-11-03 | 2016-05-11 | (주)디엔에프 | 실리콘 전구체를 포함하는 박막증착용 조성물 및 이를 이용한 실리콘함유 박막의 제조방법 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100595527B1 (ko) * | 2004-06-14 | 2006-07-03 | 학교법인 서강대학교 | 단당류의 올리고머 유도체를 이용한 구리배선용 초저유전막 |
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US10684244B2 (en) * | 2015-10-21 | 2020-06-16 | Ellen T Chen | Making of organic nanobiomimetic memristor and memcapacitors and its applications in dual sensing of a biomarker in neurodegenerative diseases thereto |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3574418D1 (en) * | 1984-05-30 | 1989-12-28 | Fujitsu Ltd | Pattern-forming material and its production and use |
US5510481A (en) * | 1990-11-26 | 1996-04-23 | The Regents, University Of California | Self-assembled molecular films incorporating a ligand |
JPH06256226A (ja) * | 1993-02-26 | 1994-09-13 | Toppan Printing Co Ltd | クロマトグラフィーによる光学分割方法 |
WO2002040571A1 (en) | 2000-11-17 | 2002-05-23 | Lee Jin Kyu | Poly (methylsilsesquioxane) copolymers and preparation method thereof |
EP1245628B1 (en) * | 2001-03-27 | 2008-08-27 | Samsung Electronics Co., Ltd. | Composition for preparing substances having nano-pores |
US6632748B2 (en) * | 2001-03-27 | 2003-10-14 | Samsung Electronics Co., Ltd. | Composition for preparing substances having nano-pores |
KR100554327B1 (ko) * | 2001-09-14 | 2006-02-24 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의 형성방법 |
US6623711B2 (en) * | 2001-03-27 | 2003-09-23 | Samsung Electronics Co., Ltd. | Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same |
FR2828345B1 (fr) * | 2001-07-31 | 2003-11-14 | Thales Sa | Dispositif de deflexion de faisceau laser a conversion de frequence |
WO2004053205A2 (en) * | 2002-07-22 | 2004-06-24 | Massachusetts Institute Of Technolgoy | Porous material formation by chemical vapor deposition onto colloidal crystal templates |
KR100488347B1 (ko) * | 2002-10-31 | 2005-05-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법 |
KR100533538B1 (ko) * | 2002-12-03 | 2005-12-05 | 삼성전자주식회사 | 새로운 기공형성물질을 포함하는 다공성 층간 절연막을형성하기 위한 조성물 |
US20070027225A1 (en) * | 2002-12-03 | 2007-02-01 | Lyu Yi Y | Composition for preparing porous dielectric thin films |
KR100504291B1 (ko) * | 2003-07-14 | 2005-07-27 | 삼성전자주식회사 | 게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법 |
KR20050040275A (ko) * | 2003-10-28 | 2005-05-03 | 삼성전자주식회사 | 절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법 |
KR100508696B1 (ko) * | 2003-12-01 | 2005-08-17 | 학교법인 서강대학교 | 구리배선용 초저유전 절연막 |
KR101157230B1 (ko) * | 2004-08-17 | 2012-06-15 | 삼성코닝정밀소재 주식회사 | 나노 기공을 포함하는 물질을 형성하기 위한 조성물 |
KR101202955B1 (ko) * | 2004-12-31 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
KR101119141B1 (ko) * | 2005-01-20 | 2012-03-19 | 삼성코닝정밀소재 주식회사 | 폴리머 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
KR101139157B1 (ko) * | 2005-02-07 | 2012-04-26 | 삼성전자주식회사 | 단일종의 입체이성질체 만으로 된 실록산 단량체 또는이의 실록산 중합체를 포함하는 저유전 박막 형성용조성물 및 이들을 이용한 저유전 박막의 제조방법 |
KR20060090483A (ko) * | 2005-02-07 | 2006-08-11 | 삼성코닝 주식회사 | 풀러렌을 포함하는 저유전 박막 형성용 조성물, 이를이용한 저유전 박막 및 저유전 박막의 제조방법 |
KR100668333B1 (ko) * | 2005-02-25 | 2007-01-12 | 삼성전자주식회사 | Pram 소자 및 그 제조방법 |
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Cited By (7)
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WO2010134684A2 (ko) * | 2009-05-20 | 2010-11-25 | 서강대학교산학협력단 | 초저유전막의 제조방법, 이에 의한 초저유전막 |
WO2010134684A3 (ko) * | 2009-05-20 | 2011-01-13 | 서강대학교산학협력단 | 초저유전막의 제조방법, 이에 의한 초저유전막 |
KR101207238B1 (ko) | 2009-05-20 | 2012-12-03 | 서강대학교산학협력단 | 초저유전막의 제조방법 |
KR101264092B1 (ko) | 2009-05-20 | 2013-05-14 | 서강대학교산학협력단 | 초저유전막의 제조방법 |
US8518530B2 (en) | 2009-05-20 | 2013-08-27 | Industry-University Cooperation Foundation Sogang University | Production method for an ultra-low-dielectric-constant film, and an ultra-low-dielectric-constant film produced thereby |
KR20160000417A (ko) | 2014-06-24 | 2016-01-04 | (주)디엔에프 | 실리콘 전구체, 이의 제조방법 및 이를 이용한 실리콘함유 유전막의 제조방법 |
KR20160051307A (ko) | 2014-11-03 | 2016-05-11 | (주)디엔에프 | 실리콘 전구체를 포함하는 박막증착용 조성물 및 이를 이용한 실리콘함유 박막의 제조방법 |
Also Published As
Publication number | Publication date |
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JP4555836B2 (ja) | 2010-10-06 |
WO2005078743A1 (en) | 2005-08-25 |
KR20050082383A (ko) | 2005-08-23 |
US7462659B2 (en) | 2008-12-09 |
JP2007523246A (ja) | 2007-08-16 |
US20070128879A1 (en) | 2007-06-07 |
DE112004002747T5 (de) | 2008-03-20 |
DE112004002747B4 (de) | 2011-12-22 |
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