KR100577781B1 - 액정 표시 장치의 패시베이션막 제조방법 - Google Patents
액정 표시 장치의 패시베이션막 제조방법 Download PDFInfo
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- KR100577781B1 KR100577781B1 KR1019990014650A KR19990014650A KR100577781B1 KR 100577781 B1 KR100577781 B1 KR 100577781B1 KR 1019990014650 A KR1019990014650 A KR 1019990014650A KR 19990014650 A KR19990014650 A KR 19990014650A KR 100577781 B1 KR100577781 B1 KR 100577781B1
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- Prior art keywords
- gas
- passivation film
- passivation
- sccm
- film
- Prior art date
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- 238000002161 passivation Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 84
- 239000007789 gas Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 10
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
- 하부 기판상에 박막 트랜지스터를 형성하고, 박막 트랜지스터를 보호하는 패시베이션막을 제조하는데 있어서,박막 트랜지스터가 형성된 하부 기판 상부를 수소 플라즈마 처리하는 단계;상기 수소 플라즈마 처리된 하부 기판상에 반응 가스인 SiH4 가스, N2 가스 및 NH3 가스 중 SiH4 가스와 N2 가스의 비를 약 1:10 정도가 되도록 하여 상기 박막 트랜지스터를 덮는 제 1 패시베이션막을 형성하는 단계; 및상기 제 1 패시베이션막 상부에 반응 가스인 SiH4 가스, N2 가스 및 NH3 가스 중 NH3 가스와 N2 가스의 비비를 1:3 정도가 되도록 하고 제 1 패시베이션막 보다 파워 세기를 증가시켜 증착 속도를 빠르게 하여 빠른 식각 속도를 갖는 제 2 패시베이션막을 형성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 패시베이션막 제조방법.
- 제 1 항에 있어서, 상기 수소 플라즈마 공정은, 800 내지 1200W의 파워, 1 내지 2torr의 압력, 730 내지 760 mils의 스페이싱(spacing), 및 1300 내지 1500 sccm의 수소(H2) 가스를 가하여 실시되는 것을 특징으로 하는 액정 표시 장치의 패시베이션막 제조방법.
- 제 1 항 또는 제 2 항에 있어서, 상기 제 1 패시베이션막은, 1200 내지 1400W의 파워와, 1 내지 2torr의 압력 및 730 내지 760 mils의 스페이싱을 두고, SiH4 가스는 300 내지 400 sccm, NH3 가스는 1000 내지 1400 sccm, N2 가스는 3300 내지 3700 sccm 정도를 가하여 형성되는 것을 특징으로 하는 액정 표시 장치의 패시베이션막 제조방법.
- 제 1 항 또는 제 2 항에 있어서, 상기 제 2 패시베이션막은 1400 내지 1600W의 파워와, 1 내지 2torr의 압력 및 900 내지 1100 mils의 스페이싱을 두고, SiH4 가스는 300 내지 400 sccm, NH3 가스는 1000 내지 1400 sccm, N2 가스는 3000 내지 4000 sccm 정도를 가하여 형성되는 것을 특징으로 하는 액정 표시 장치의 패시베이션막 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019990014650A KR100577781B1 (ko) | 1999-04-23 | 1999-04-23 | 액정 표시 장치의 패시베이션막 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019990014650A KR100577781B1 (ko) | 1999-04-23 | 1999-04-23 | 액정 표시 장치의 패시베이션막 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20000067119A KR20000067119A (ko) | 2000-11-15 |
KR100577781B1 true KR100577781B1 (ko) | 2006-05-10 |
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KR1019990014650A KR100577781B1 (ko) | 1999-04-23 | 1999-04-23 | 액정 표시 장치의 패시베이션막 제조방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593050A (zh) * | 2012-03-09 | 2012-07-18 | 深超光电(深圳)有限公司 | 一种液晶显示面板阵列基板的制作方法 |
KR101222986B1 (ko) | 2006-12-28 | 2013-01-17 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판의 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236654A (ja) * | 1988-03-17 | 1989-09-21 | Toshiba Corp | アクティブマトリックス型液晶表示装置の製造方法 |
JPH03257829A (ja) * | 1990-03-07 | 1991-11-18 | Matsushita Electric Ind Co Ltd | 透明絶縁層の製造方法並びに表示装置の製造方法 |
JPH05206118A (ja) * | 1992-01-24 | 1993-08-13 | Sony Corp | 絶縁膜の形成方法 |
JPH05335335A (ja) * | 1992-06-01 | 1993-12-17 | Toshiba Corp | 水素化アモルファスシリコン薄膜トランジスタの製造方法 |
-
1999
- 1999-04-23 KR KR1019990014650A patent/KR100577781B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236654A (ja) * | 1988-03-17 | 1989-09-21 | Toshiba Corp | アクティブマトリックス型液晶表示装置の製造方法 |
JPH03257829A (ja) * | 1990-03-07 | 1991-11-18 | Matsushita Electric Ind Co Ltd | 透明絶縁層の製造方法並びに表示装置の製造方法 |
JPH05206118A (ja) * | 1992-01-24 | 1993-08-13 | Sony Corp | 絶縁膜の形成方法 |
JPH05335335A (ja) * | 1992-06-01 | 1993-12-17 | Toshiba Corp | 水素化アモルファスシリコン薄膜トランジスタの製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101222986B1 (ko) | 2006-12-28 | 2013-01-17 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판의 제조방법 |
CN102593050A (zh) * | 2012-03-09 | 2012-07-18 | 深超光电(深圳)有限公司 | 一种液晶显示面板阵列基板的制作方法 |
CN102593050B (zh) * | 2012-03-09 | 2014-08-20 | 深超光电(深圳)有限公司 | 一种液晶显示面板阵列基板的制作方法 |
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Publication number | Publication date |
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KR20000067119A (ko) | 2000-11-15 |
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