KR100560853B1 - Silicon Wafer Surface Smoothing Method and Apparatus - Google Patents

Silicon Wafer Surface Smoothing Method and Apparatus Download PDF

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KR100560853B1
KR100560853B1 KR1019970051253A KR19970051253A KR100560853B1 KR 100560853 B1 KR100560853 B1 KR 100560853B1 KR 1019970051253 A KR1019970051253 A KR 1019970051253A KR 19970051253 A KR19970051253 A KR 19970051253A KR 100560853 B1 KR100560853 B1 KR 100560853B1
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oxide film
seconds
wafer
silicon wafer
injecting
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KR1019970051253A
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KR19990030820A (en
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윤덕주
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윤덕주
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers

Abstract

본 발명은, 반도체 소자제조용 실리콘 웨이퍼의 산화막이 일정허용편차 이상의 요절편차를 갖는 경우 이후의 감광처리 등에 문제로 되고 있고, 이에 현재는 이들 웨이퍼를 연마재위에서 마찰시켜 표면을 깍아내므로서 평활화하고 있으나 마이크로단위를 연마 가공하는 데는 상당히 고정밀성을 요구하므로 장비가 대단히 고가이며, 그에 따른 연마잔류물 세척장치 등 고가의 장비가 필요하여 반도체 제조원가 상승의 주요인이 되고 있는 점을 감안하여 발명된 것으로, 본 발명은 SiO2로 되는 산화막이 HF와 접촉시 용융이 된다는 사실에 입각하여 표면을 용융후 원심력으로 자중에 의한 평활화를 유도하므로 극히 간단한 밀봉조내에서 모든 평활 작업이 이루어지도록 하여, 가공이 간단함에 따른 설비조건의 경제성과 대량신속성이 확보되는 효과를 갖는다.In the present invention, when the oxide film of a semiconductor wafer for manufacturing a semiconductor device has a major deviation more than a certain allowable deviation, there is a problem in the subsequent photosensitive treatment. It is invented in view of the fact that the equipment is extremely expensive because of the extremely high precision required to polish the unit, and thus, expensive equipment such as a polishing residue washing apparatus is required, thereby increasing the semiconductor manufacturing cost. Based on the fact that the oxide film made of SiO 2 is melted when it comes into contact with HF, the surface is melted to induce smoothing by its own weight by centrifugal force. Having the effect of securing economic conditions and mass rapidity All.

Description

실리콘 웨이퍼 표면 평활 처리방법 및 장치Silicon Wafer Surface Smoothing Process and Apparatus

본 발명은 고집적 반도체소자용으로 사용되는 실리콘웨이퍼 표면을 평활하게 처리하는 방법 및 그 장치에 관한 것이다.The present invention relates to a method and apparatus for smoothly treating a surface of a silicon wafer used for highly integrated semiconductor devices.

실리콘 웨이퍼는 순도가 높은 원통형의 실리콘을 목적한 소자의 형태에 따라 일정 두께로 자른 다음 고온에서 표면을 산화처리하여 산화막을 형성한다. 이때 형성된 산화막은 추후에 패턴마스킹 처리시에 발생될 오차를 최소화하기 위하여 최소한의 편차를 갖고 있어야 한다. 즉, 1㎛ 이상의 편차를 갖는 경우 패턴 형성이 불안정하여 불량품이 생산될 수 있는 것이다.The silicon wafer is cut to a certain thickness according to the shape of the target device of a high-purity cylindrical silicon, and then oxidized the surface at a high temperature to form an oxide film. The oxide film formed at this time should have a minimum deviation in order to minimize the error that will be generated in the later pattern masking process. In other words, when the deviation is 1㎛ or more, the pattern formation is unstable, and defective products can be produced.

이에 종래에는 표면을 평활화하기 위하여 도 1에서 도시하듯이 웨이퍼(17)를 회전웨이퍼척(1)에 홀딩하고, 상부에 알루미나와 같은 연마재를 포함하는 폴리싱패드면(3) 위에 마찰시켜 산화막면을 균일하게 연마하고 있다.Accordingly, in order to smooth the surface, as shown in FIG. 1, the wafer 17 is held on the rotating wafer chuck 1 and the oxide film surface is rubbed on the polishing pad surface 3 containing an abrasive such as alumina on the top. Polishing is uniform.

이와 같은 연마기술은 연마후 표면에 잔류하는 불순물을 세정하기위한 세정장치를 필요로 하고 있다. 즉, 웨이퍼 표면은 1㎛ 미만의 고 정밀도를 요구하므로 불순물을 반드시 제거하여야 한다. 따라서, 고가의 가공장비와 더불어 별도의 세정장치를 필요로 하게 되고, 특히 공정간의 이동을 위한 특수한 이송장치가 요구되어 원가상승요인이 되고 있는 것이다.Such a polishing technique requires a cleaning device for cleaning impurities remaining on the surface after polishing. That is, the wafer surface requires high precision of less than 1 mu m, so impurities must be removed. Therefore, a separate cleaning device is required in addition to expensive processing equipment, and in particular, a special transfer device for moving between processes is required, which is a cost increase factor.

또한 공정이 길어질수록 오차도 그만큼 크게 되어 반도체 소자 생산에 악영향을 주는 것이다.In addition, the longer the process, the greater the error, which adversely affects the production of semiconductor devices.

이에 본 발명의 목적은 실리콘웨이퍼의 산화막을 연마처리함에 있어서 기계적 마찰연마가 아닌 화학적 평활화로 일회의 공정으로 평활이 가능토록 함으로써 공정의 단순화와 신속성 및 원가절감을 이룰 수 있는 실리콘웨이퍼 표면을 평활하게 처리하는 방법 및 그 장치를 제공함에 있다.Accordingly, an object of the present invention is to smooth the surface of the silicon wafer, which can simplify the process, speed and cost by making the smoothing process in one step by chemical smoothing rather than mechanical friction polishing in polishing the oxide film of the silicon wafer. The present invention provides a method and apparatus for processing the same.

이러한 본 발명의 목적은 반도체소자제조용 실리콘웨이퍼를 제조함에 있어서, 밀봉커버(11)와 하판(21)사이의 공간부(20)에 배치된 웨이퍼홀딩부(19)에 피가공웨이퍼(17)를 안치후 4~60초간 N2, Ar과 같은 불활성 기체를 공급하여 안정화하는 공정, 1-2분간 경과후 수증기 함유된 불활성 기체를 5~60초간 더 공급 후 수증기 함유된 HF기체를 실리콘웨이퍼의 산화막 표면에 1~60초간 분무하여 하기식과 같은 반응을 유도하여 용융시키는 공정,An object of the present invention is to manufacture a wafer to be processed in the wafer holding portion 19 disposed in the space portion 20 between the sealing cover 11 and the lower plate 21 in manufacturing a silicon wafer for semiconductor device manufacturing. Process of stabilization by supplying inert gas such as N 2 , Ar for 4 ~ 60 seconds after settling, and supplying inert gas containing steam for 5 ~ 60 seconds after 1-2 minutes, and then adding HF gas containing steam to oxide film of silicon wafer Spraying the surface for 1 to 60 seconds to induce a reaction such as the following formula to melt;

용융처리된 실리콘 웨이퍼를 회전척 위에서 1~2분간 저속 회전시켜 용융상태의 실리콘 산화막이 피플로우되어 평탄화 되도록 하는 공정, 평활화가 되면 탈이온수를 5~60초간 분무하여 산화막 표면을 세척하는 공정, 세척이 완료되면 액상 알콜을 분무하거나 그대로 증발건조하는 공정으로 구성되어 있다.Rotate the melted silicon wafer on the rotary chuck at low speed for 1 ~ 2 minutes to make the molten silicon oxide film to be flowed and planarized.If smoothed, spray deionized water for 5 ~ 60 seconds to clean the oxide film surface. When this is completed, the process consists of spraying the liquid alcohol or evaporation to dry as it is.

본 발명에서 질소공급은 초기에는 순수질소만 공급한다. 수증기 함유 질소를 병용 공급할 수 있으며, HF공급도 초기에는 순순HF만 공급하고 이어서 N2 를 약간 공급후 수증기 함유 HF를 공급하여 줄수 있다.In the present invention, the nitrogen supply initially supplies only pure nitrogen. Steam-containing nitrogen can be supplied in combination, and HF supply can also be supplied initially with pure net HF, followed by N2, and then with steam-containing HF.

본 발명에서 실리콘웨이퍼 산화막의 평탄화시 HF는 0.5~1.0SLM(Standard liter per a mimute)가 적당하며, 수분함유 질소는 5~10SLM이 적당하다.In the present invention, HF is preferably 0.5 to 1.0 SLM (Standard liter per a mimute), and 5 to 10 SLM is appropriate for the silicon wafer oxide planarization.

이상의 방법을 실시하는데 가장 적합한 장치는 도 2에 도시되어 있다.The most suitable device for carrying out the above method is shown in FIG.

본 발명의 장치는 회전축(16)이 평판형태의 하판(21)의 중앙에 관통 배설되어 웨이퍼홀딩부(19)와 연결토록하며, 이 웨이퍼홀딩부 전체를 밀봉 포괄토록 하는 밀봉커버(11)로 덮어주어 내부에 공간부(20)를 구성토록 하였으며, 상기한 밀봉커버(11)의 일측면에는 압력조절기(12)가 설치되고 타측면에는 가스주입챔버(13)와 배출로(14)가 형성되어진 구조를 갖는다.In the device of the present invention, the rotating shaft 16 is disposed through the center of the lower plate 21 in the form of a plate so as to be connected to the wafer holding portion 19, and the sealing cover 11 encapsulating the entire wafer holding portion. Covered to form the space portion 20 therein, the pressure regulator 12 is installed on one side of the sealing cover 11 and the gas injection chamber 13 and the discharge passage 14 is formed on the other side It has a structure.

본 발명의 또 다른 예로서 처리용 가스주입챔버(15)를 하판(21)에 별도로 구성시켜주어 상하에서 동시에 가스를 주입시켜 줄 수도 있다.As another example of the present invention, the processing gas injection chamber 15 may be separately configured on the lower plate 21 so that the gas may be injected at the same time up and down.

본 발명에서 회전축(16)은 미도시한 모터의 출력축과 축결되어져 있어 필요한 속도로 웨퍼홀딩부(19)를 회전토록 하였다.In the present invention, the rotation shaft 16 is condensed with the output shaft of the motor (not shown) to rotate the wafer holding unit 19 at a required speed.

압력조절기(12)는 공간부(20)의 실내 가스압이 일정한 상태를 유지하도록 과압시 압력배출, 저압시 밀봉기능이 발휘토록 한다.The pressure regulator 12 is to exert the pressure discharge during overpressure, the sealing function at low pressure so that the indoor gas pressure of the space portion 20 to maintain a constant state.

이상의 구조적 특징에 따른 작동관계를 설명한다.The operational relationship according to the above structural features will be described.

표면가공이 필요한 웨이퍼(17)를 기존의 설치된 이송기를 이용하여 본 발명의 웨이퍼홀딩부(19)에 안착시킨다.The wafer 17 requiring surface processing is seated on the wafer holding part 19 of the present invention by using a conventionally installed conveyer.

이어서 액튜에이터(10)의 작동으로 밀봉커버(11)를 덮어준 다음 N2와 같은 불활성 기체를 가스주입챔버(13)를 통하여 주입하여 공간부(20)를 불활성기체 분위기로 전환시킨다. 1~2분간 경과후 수증기 함유된 HF기체를 주입하면 SiO2는 HF와 반응하여 H2SiF6로 되고 이어서 SiO2로 되어 증발되므로 단단한 산화막의 조직이 흩어지며 용융된다. 이러한 순간 회전축(16)의 회전 운동력이 웨이퍼홀딩부(19)에 전달되어 회전되므로 용융산화막이 원심력을 받아 퍼져 나가면서 요철이 평활하게 되는 것이다.Subsequently, the sealing cover 11 is covered by the operation of the actuator 10, and then an inert gas such as N 2 is injected through the gas injection chamber 13 to convert the space 20 into an inert gas atmosphere. After injecting HF gas containing water vapor for 1 to 2 minutes, SiO 2 reacts with HF to H 2 SiF 6 and then to SiO 2 to evaporate, so that the structure of the hard oxide film is dispersed and melted. Since the rotational kinetic force of the instantaneous rotation shaft 16 is transmitted to the wafer holding unit 19 to rotate, the molten oxide film is spread under the centrifugal force to smooth the unevenness.

평활이 완성되면 탈이온수를 분무하여 표면을 세척하고, 알콜로 건조 처리하면 표면 평활이 완성되는 것이다.When the smoothing is completed, the surface is cleaned by spraying with deionized water, and the surface smoothing is completed by drying with alcohol.

이상의 일련의 공정과 장치를 이용한 구체적 실시예는 다음과 같다.Specific examples using the above series of processes and apparatus are as follows.

[실시예]EXAMPLE

본 발명의 장치에 웨이퍼를 옮겨 놓고 웨이퍼 홀딩부를 10~100rpm의 속도로 회전하면서 순수 질소 가스를 5초간 23s/m 정도 주입후 이이서 순수 HF만 30초간 주입하다가 순수질소 3s/m을 주입하고 연속하여 수증기 함유 HF 4s/m을 주입후 다시 순수 HF만 0.75s/m 주입하여 준다.After transferring the wafer to the apparatus of the present invention, while injecting pure nitrogen gas at 23 s / m for 5 seconds while rotating the wafer holding unit at a speed of 10 to 100 rpm, injecting pure HF for 30 seconds followed by injecting pure nitrogen 3 s / m and continuously After injecting water-containing HF 4s / m, pure HF is injected again 0.75s / m.

수증기 함유 질소 9s/m과 순수질소 9s/m 을 순화로 용융이 되면 3000rpm정도로 웨이퍼 홀딩부를 회전하면서 순수질소를 불어넣어 전체적인 HF를 배출시켜 N2 분위기로 조성후 탈이온수로 세척후 건조처리 하였다.When the melt with steam-containing nitrogen 9s / m and a pure nitrogen 9s / m for purified with rotating parts of the wafer holding about 3000rpm by blowing pure nitrogen discharge the whole HF was dried treatment after washing with deionized water after the composition in N 2 atmosphere.

평활처리전 평균 요철오차가 평균 0.25㎛ 이었으나 평활처리후 0,12㎛이었다.The average unevenness error before the smoothing process was an average of 0.25㎛ but 0,12㎛ after the smoothing treatment.

본 발명은 반도체웨이퍼 생산시 가장 값비싼 장비와 비용이 소요되는 표면평활화 장비를 1챔버내에서 화학적기체를 이용하여 단순회전장치만 있으면 가능하기에 장비의 단순화로 공정이 신속, 정확함은 물론 생산 원가도 획기적으로 절감하는 것이다.In the present invention, the most expensive equipment and the most costly surface smoothing equipment in the production of semiconductor wafers can be achieved by using a simple gas rotary device using a chemical gas in one chamber. It is also a significant savings.

도 1은 종래 표면처리장치의 구성을 보인 단면도1 is a cross-sectional view showing the configuration of a conventional surface treatment apparatus

도 2은 본 발명의 표면처리장치의 구성을 보인 단면도Figure 2 is a cross-sectional view showing the configuration of the surface treatment apparatus of the present invention

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

1: 회전웨이퍼 2: 마운팅패드1: rotating wafer 2: mounting pad

3: 폴리싱패드 4: 경질상판3: polishing pad 4: hard top plate

10: 액튜에이터 11: 밀봉커버10: Actuator 11: Sealing Cover

12: 압력조절기 13: 가스주입챔버12: pressure regulator 13: gas injection chamber

14: 배출로 15: 가스주입챔버14: discharge path 15: gas injection chamber

16: 회전축 17: 웨이퍼16: axis of rotation 17: wafer

21: 하판 20: 공간부21: bottom 20: space part

Claims (2)

반도체소자제조용 실리콘웨이퍼의 산화막을 평활처리함에 있어서,In smoothing the oxide film of the silicon wafer for semiconductor device manufacturing, 밀봉커버(11)와 하판(21)사이의 공간부(20)에 배치된 웨이퍼홀딩부(19)에 피가공웨이퍼(17)를 안치후 4~60초간 순수질소를 주입후 1~60초간 공급하여 안정화하는 공정;After placing the processing wafer 17 into the wafer holding portion 19 disposed in the space portion 20 between the sealing cover 11 and the lower plate 21, pure nitrogen is injected for 4 to 60 seconds and then supplied for 1 to 60 seconds. Stabilizing by; 수증기 함유 HF기체를 1~60초간 주입하여 하기식과 같은 산화막의 용융을 유도하는 공정;Injecting water-containing HF gas for 1 to 60 seconds to induce melting of the oxide film as shown in the following formula;
Figure pat00002
Figure pat00002
 용융처리된 실리콘 웨이퍼를 회전척 위에서 1~2분간 저속 회전시켜 용융상태의 실리콘 산화막이 리플로우되어 평탄화 되도록 하는 공정,Rotating the melted silicon wafer at a low speed for 1 to 2 minutes on a rotary chuck so that the molten silicon oxide film is reflowed and planarized; 5~60초후 탈이온수를 가하여 표면을 세척하는 공정;Washing the surface by adding deionized water after 5 to 60 seconds; 세척이 완료되면 건조처리하는 공정으로 구성되는 것을 특징으로 하는 실리콘웨이퍼 표면 평활처리 공정.Silicon washing surface smoothing process, characterized in that consisting of a process of drying when the cleaning is complete. 제1항에 있어서, 산화막의 용융을 유도하는 공정은 순수HF만 20~40초간 주입후, 순수질소 가스를 주입한 다음 수증기와 HF가 혼재한 기체를 주입하고 최종적으로 순수HF만을 주입하여 용융처리하는 공정으로 구성되는 것을 특징으로 하는 실리콘웨이퍼표면 평활처리 공정.The process of inducing melting of an oxide film is performed by injecting pure HF only for 20 to 40 seconds, injecting pure nitrogen gas, injecting a mixture of water vapor and HF, and finally injecting pure HF to melt the molten treatment. Silicon wafer surface smoothing process, characterized in that consisting of a process to.
KR1019970051253A 1997-10-06 1997-10-06 Silicon Wafer Surface Smoothing Method and Apparatus KR100560853B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225823A (en) * 1990-01-30 1991-10-04 Toshiba Corp Compound semiconductor device
US5100839A (en) * 1988-11-01 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing wafers used for electronic device
KR960026369A (en) * 1994-12-30 1996-07-22 김주용 Method of planarizing interlayer insulating film of semiconductor device
JPH08264398A (en) * 1995-03-20 1996-10-11 Mitsubishi Materials Corp Manufacture of silicon semiconductor wafer
EP0782177A2 (en) * 1995-12-28 1997-07-02 Texas Instruments Incorporated Improvements in or relating to semiconductors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100839A (en) * 1988-11-01 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing wafers used for electronic device
JPH03225823A (en) * 1990-01-30 1991-10-04 Toshiba Corp Compound semiconductor device
KR960026369A (en) * 1994-12-30 1996-07-22 김주용 Method of planarizing interlayer insulating film of semiconductor device
JPH08264398A (en) * 1995-03-20 1996-10-11 Mitsubishi Materials Corp Manufacture of silicon semiconductor wafer
EP0782177A2 (en) * 1995-12-28 1997-07-02 Texas Instruments Incorporated Improvements in or relating to semiconductors

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